JP2012124481A5 - - Google Patents

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Publication number
JP2012124481A5
JP2012124481A5 JP2011265369A JP2011265369A JP2012124481A5 JP 2012124481 A5 JP2012124481 A5 JP 2012124481A5 JP 2011265369 A JP2011265369 A JP 2011265369A JP 2011265369 A JP2011265369 A JP 2011265369A JP 2012124481 A5 JP2012124481 A5 JP 2012124481A5
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JP
Japan
Prior art keywords
photodiode
substrate
doped
guard bands
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011265369A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012124481A (ja
JP6130624B2 (ja
Filing date
Publication date
Priority claimed from US12/963,854 external-priority patent/US8441091B2/en
Application filed filed Critical
Publication of JP2012124481A publication Critical patent/JP2012124481A/ja
Publication of JP2012124481A5 publication Critical patent/JP2012124481A5/ja
Application granted granted Critical
Publication of JP6130624B2 publication Critical patent/JP6130624B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011265369A 2010-12-09 2011-12-05 フォトダイオードアセンブリ Active JP6130624B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/963,854 US8441091B2 (en) 2010-12-09 2010-12-09 Photosensor assembly and method for providing a photosensor assembly
US12/963,854 2010-12-09

Publications (3)

Publication Number Publication Date
JP2012124481A JP2012124481A (ja) 2012-06-28
JP2012124481A5 true JP2012124481A5 (enExample) 2015-01-15
JP6130624B2 JP6130624B2 (ja) 2017-05-17

Family

ID=46198508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011265369A Active JP6130624B2 (ja) 2010-12-09 2011-12-05 フォトダイオードアセンブリ

Country Status (3)

Country Link
US (1) US8441091B2 (enExample)
JP (1) JP6130624B2 (enExample)
CN (1) CN102569319B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2983347B1 (fr) * 2011-11-28 2014-07-25 Commissariat Energie Atomique Dispositif a matrice de diodes a resistances d'acces et stabilite amelioree
FR3001578B1 (fr) * 2013-01-31 2015-04-03 New Imaging Technologies Sas Matrice de photodiode a zone dopee absorbant les charges
US9613992B2 (en) 2013-06-24 2017-04-04 Ge Medical Systems Israel, Ltd Detector module for an imaging system
JP2015113685A (ja) * 2013-12-13 2015-06-22 株式会社交通総合研究所 建造物ユニット
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
CN108139488A (zh) * 2015-10-14 2018-06-08 深圳帧观德芯科技有限公司 能够限制载流子扩散的x射线检测器
JP6570750B2 (ja) * 2016-07-12 2019-09-04 三菱電機株式会社 赤外線検出素子および赤外線検出素子の製造方法
JP6923850B2 (ja) * 2018-03-15 2021-08-25 オムロン株式会社 光電センサ
US10672826B2 (en) * 2018-04-18 2020-06-02 Raytheon Company Segmented channel stop grid for crosstalk mitigation in visible imaging arrays

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380572B1 (en) * 1998-10-07 2002-04-30 California Institute Of Technology Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate
EP1198845A4 (en) * 1999-07-02 2008-07-02 Digirad Corp Indirect back surface contact to semiconductor devices
JP2003086827A (ja) * 2001-09-12 2003-03-20 Hamamatsu Photonics Kk ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
JP2004303878A (ja) * 2003-03-31 2004-10-28 Nippon Sheet Glass Co Ltd 受光素子アレイ
US7170143B2 (en) * 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
KR100959435B1 (ko) * 2007-12-26 2010-05-25 주식회사 동부하이텍 이미지 센서 및 그 제조방법

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