JP2012116691A5 - Single crystal raw material melting apparatus and method - Google Patents
Single crystal raw material melting apparatus and method Download PDFInfo
- Publication number
- JP2012116691A5 JP2012116691A5 JP2010266920A JP2010266920A JP2012116691A5 JP 2012116691 A5 JP2012116691 A5 JP 2012116691A5 JP 2010266920 A JP2010266920 A JP 2010266920A JP 2010266920 A JP2010266920 A JP 2010266920A JP 2012116691 A5 JP2012116691 A5 JP 2012116691A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- raw material
- melting
- crystal raw
- cylindrical body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
本発明は、単結晶原料の溶融装置および溶融方法に関し、特に、チョクラルスキー法により単結晶インゴットを製造する際に用いる単結晶原料の溶融装置および溶融方法に関するものである。 The present invention relates to a melting apparatus and a melting method for a single crystal raw material, and more particularly to a melting apparatus and a melting method for a single crystal raw material used when a single crystal ingot is manufactured by the Czochralski method .
そこで、本発明は、メインチャンバーの構造の複雑化および設備コストの増大を抑制しつつ、るつぼ内に投入した単結晶原料をるつぼ上方から直接加熱することが可能な単結晶原料の溶融装置および溶融方法を提供することを目的とする。 Accordingly, the present invention provides a single crystal raw material melting apparatus and a melting device capable of directly heating the single crystal raw material charged in the crucible directly from above the crucible while suppressing the complexity of the structure of the main chamber and the increase in equipment cost. It aims to provide a method .
この発明は、上記課題を有利に解決することを目的とするものであり、本発明の単結晶原料の溶融装置は、チョクラルスキー法による単結晶製造装置のメインチャンバー内のるつぼに投入された単結晶原料の溶融に用いる溶融装置であって、移動機構を有する本体部と、単結晶製造装置のメインチャンバーのゲートバルブに連結される下部開口端と、上部閉止端とを有する筒状体と、前記本体部に設けられ、前記下部開口端と前記ゲートバルブとが連結する連結位置と、前記下部開口端と前記ゲートバルブとが上下に離間した解除位置との間で前記筒状体を上下に昇降させる筒状体昇降機構と、前記筒状体の内部から下方に突出してるつぼ内の単結晶原料を加熱するヒーターと、前記本体部に設けられ、前記筒状体内の収容位置と、前記下部開口端よりも下方の単結晶原料加熱位置との間で前記ヒーターを上下に昇降させるヒーター昇降機構と、前記ヒーターへ電力を供給する電力供給源との接続部とを備えることを特徴とする。このように、本体部に移動機構を設けて溶融装置を移動可能とすれば、複数のメインチャンバー間で一台の溶融装置を共有することができるので、メインチャンバーごとにサブヒーターを配設する場合と比較して設備コストの増大を抑制することができる。また、筒状体と、筒状体昇降機構と、ヒーターと、ヒーター昇降機構とを設ければ、メインチャンバー内にサブヒーターを設けることなく、即ちメインチャンバー内の構造を複雑化することなく、メインチャンバーのるつぼ内の単結晶原料をるつぼ上方から直接加熱することができる。
また、この発明は、上記課題を有利に解決することを目的とするものであり、本発明の単結晶原料の溶融方法は、チョクラルスキー法による単結晶製造装置のメインチャンバー内のるつぼに投入された単結晶原料を溶融する方法であって、上述した単結晶原料の溶融装置を使用して前記単結晶原料を溶融することを特徴とする。
The present invention aims to advantageously solve the above-mentioned problems, and the single crystal raw material melting apparatus of the present invention was put into a crucible in a main chamber of a single crystal manufacturing apparatus by the Czochralski method. A melting apparatus used for melting a single crystal raw material, a cylindrical body having a main body having a moving mechanism, a lower opening end connected to a gate valve of a main chamber of the single crystal manufacturing apparatus, and an upper closed end The cylindrical body is moved up and down between a connection position provided in the main body portion, where the lower opening end and the gate valve are connected, and a release position where the lower opening end and the gate valve are vertically separated. A cylindrical body elevating mechanism that moves up and down, a heater that heats the single crystal raw material in the crucible protruding downward from the inside of the cylindrical body, the main body portion, the accommodation position in the cylindrical body, beneath A heater elevating mechanism for elevating the heater up and down between the single crystal raw material heating position below the mouth end, characterized in that it comprises a connection portion of a power supply source for supplying power to the heater. Thus, if the main body is provided with a moving mechanism so that the melting apparatus can be moved, a single melting apparatus can be shared among a plurality of main chambers, so a sub-heater is provided for each main chamber. The increase in equipment cost can be suppressed compared to the case. Further, if a cylindrical body, a cylindrical body lifting mechanism, a heater, and a heater lifting mechanism are provided, a sub heater is not provided in the main chamber, that is, without complicating the structure in the main chamber, The single crystal raw material in the crucible of the main chamber can be directly heated from above the crucible.
Further, the present invention aims to advantageously solve the above-mentioned problems, and the method for melting a single crystal raw material of the present invention is put into a crucible in a main chamber of a single crystal manufacturing apparatus by the Czochralski method. A method of melting the single crystal raw material, wherein the single crystal raw material is melted using the above-described single crystal raw material melting apparatus.
そして、本発明の単結晶原料の溶融装置は、るつぼ内の単結晶原料の位置を検出し、該単結晶原料の位置に応じて前記ヒーターの上下方向の位置を制御するヒーター位置制御機構を有することが好ましい。ヒーター位置制御機構を設ければ、単結晶原料の一部が溶融してるつぼ内の単結晶原料の嵩密度が高くなり、るつぼ内の単結晶原料の位置が変化しても、ヒーターの位置を調整して単結晶原料を効率的に加熱することができるからである。
また、本発明の単結晶原料の溶融方法は、前記メインチャンバーのゲートバルブと、前記溶融装置の筒状体の下部開口端とを連結する連結工程を含み、前記連結を、前記ゲートバルブを閉じた状態で行うことが好ましい。
更に、本発明の単結晶原料の溶融方法は、前記単結晶原料を溶融した後、前記メインチャンバーのゲートバルブを閉じ、前記溶融装置の筒状体の下部開口端と、前記ゲートバルブとの連結を解除する解除工程を含み、前記解除を、前記筒状体の内部を加圧した後に行うことが好ましい。
The single crystal raw material melting apparatus of the present invention has a heater position control mechanism that detects the position of the single crystal raw material in the crucible and controls the vertical position of the heater according to the position of the single crystal raw material. It is preferable. If the heater position control mechanism is provided, the bulk density of the single crystal raw material in the crucible becomes higher due to the melting of part of the single crystal raw material, and the position of the heater can be adjusted even if the position of the single crystal raw material in the crucible changes. This is because the single crystal raw material can be efficiently heated by adjustment.
The method for melting a single crystal raw material of the present invention includes a connecting step of connecting a gate valve of the main chamber and a lower opening end of a cylindrical body of the melting apparatus, and the connection is closed by closing the gate valve. It is preferable to carry out in the state.
Furthermore, in the method for melting a single crystal raw material of the present invention, after melting the single crystal raw material, the gate valve of the main chamber is closed, and the lower opening end of the cylindrical body of the melting apparatus is connected to the gate valve. It is preferable that the release is performed after the inside of the cylindrical body is pressurized.
本発明の単結晶原料の溶融装置および溶融方法によれば、メインチャンバーの構造の複雑化および設備コストの増大を抑制しつつ、るつぼ内に投入した単結晶原料をるつぼ上方から直接加熱することができる。 According to the melting apparatus and the melting method of the single crystal raw material of the present invention, the single crystal raw material charged into the crucible can be directly heated from above the crucible while suppressing the complicated structure of the main chamber and the increase in equipment cost. it can.
また、閉止板昇降装置５は、ガイド支柱１３、支持板１２および支持板昇降装置３を介して本体部１と一体に設けられており、閉止板２２をガイド支柱１３に沿って図１では上下方向に昇降移動させるものである。そして、この閉止板昇降装置５は、モーター等（図示せず）を用いて閉止板２２をガイド支柱１３に沿って昇降移動させることにより、下部が支持板１２に固定された蛇腹構造を有する筒状体２を上下方向に伸縮させることができる。 Further, the closing plate elevating device 5 is provided integrally with the main body 1 via the guide column 13, the support plate 12 and the support plate elevating device 3, and the closing plate 22 is moved up and down along the guide column 13 in FIG. It moves up and down in the direction. The closing plate elevating device 5 is a cylinder having a bellows structure in which the lower portion is fixed to the support plate 12 by moving the closing plate 22 up and down along the guide column 13 using a motor or the like ( not shown). The body 2 can be expanded and contracted in the vertical direction.
Claims (9)
移動機構を有する本体部と、
単結晶製造装置のメインチャンバーのゲートバルブに連結される下部開口端と、上部閉止端とを有する筒状体と、
前記本体部に設けられ、前記下部開口端と前記ゲートバルブとが連結する連結位置と、前記下部開口端と前記ゲートバルブとが上下に離間した解除位置との間で前記筒状体を上下に昇降させる筒状体昇降機構と、
前記筒状体の内部から下方に突出してるつぼ内の単結晶原料を加熱するヒーターと、
前記本体部に設けられ、前記筒状体内の収容位置と、前記下部開口端よりも下方の単結晶原料加熱位置との間で前記ヒーターを上下に昇降させるヒーター昇降機構と、
前記ヒーターへ電力を供給する電力供給源との接続部と、
を備えることを特徴とする、単結晶原料の溶融装置。 A melting apparatus used for melting a single crystal raw material charged in a crucible in a main chamber of a single crystal manufacturing apparatus by the Czochralski method,
A main body having a moving mechanism;
A cylindrical body having a lower open end connected to the gate valve of the main chamber of the single crystal manufacturing apparatus, and an upper closed end;
The cylindrical body is moved up and down between a connection position provided on the main body portion, where the lower opening end and the gate valve are connected, and a release position where the lower opening end and the gate valve are separated vertically. A cylindrical body lifting mechanism for raising and lowering;
A heater for heating the single crystal raw material in the crucible protruding downward from the inside of the cylindrical body;
A heater elevating mechanism that is provided in the main body, and moves the heater up and down between an accommodation position in the cylindrical body and a single crystal raw material heating position below the lower opening end;
A connection with a power supply source for supplying power to the heater;
An apparatus for melting a single crystal raw material, comprising:
前記ヒーターが前記上部閉止端に対して固定されており、
前記ヒーター昇降機構が、前記筒状体を伸縮させて前記ヒーターを上下に昇降させることを特徴とする、請求項１に記載の単結晶原料の溶融装置。 The cylindrical body has a bellows structure;
The heater is fixed to the upper closed end;
The apparatus for melting a single crystal raw material according to claim 1, wherein the heater elevating mechanism elevates and lowers the heater up and down by expanding and contracting the cylindrical body.
請求項１〜６の何れかに記載の単結晶原料の溶融装置を使用して前記単結晶原料を溶融することを特徴とする、単結晶原料の溶融方法。A method for melting a single crystal raw material, wherein the single crystal raw material is melted using the single crystal raw material melting apparatus according to claim 1.
前記連結を、前記ゲートバルブを閉じた状態で行うことを特徴とする、請求項７に記載の単結晶原料の溶融方法。The method for melting a single crystal raw material according to claim 7, wherein the connection is performed with the gate valve closed.
前記解除を、前記筒状体の内部を加圧した後に行うことを特徴とする、請求項７または８に記載の単結晶原料の溶融方法。The method for melting a single crystal raw material according to claim 7 or 8, wherein the releasing is performed after pressurizing the inside of the cylindrical body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010266920A JP5691446B2 (en) | 2010-11-30 | 2010-11-30 | Single crystal raw material melting apparatus and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010266920A JP5691446B2 (en) | 2010-11-30 | 2010-11-30 | Single crystal raw material melting apparatus and method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012116691A JP2012116691A (en) | 2012-06-21 |
| JP2012116691A5 true JP2012116691A5 (en) | 2013-12-05 |
| JP5691446B2 JP5691446B2 (en) | 2015-04-01 |
Family
ID=46499999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010266920A Active JP5691446B2 (en) | 2010-11-30 | 2010-11-30 | Single crystal raw material melting apparatus and method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5691446B2 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2939918B2 (en) * | 1992-11-05 | 1999-08-25 | コマツ電子金属株式会社 | Semiconductor single crystal manufacturing apparatus and manufacturing method |
| JP3671562B2 (en) * | 1996-11-22 | 2005-07-13 | 信越半導体株式会社 | Single crystal manufacturing apparatus and manufacturing method |
| JPH11255593A (en) * | 1998-03-12 | 1999-09-21 | Super Silicon Kenkyusho:Kk | Auxiliary apparatus for melting raw material |
| JP2005053722A (en) * | 2003-08-01 | 2005-03-03 | Shin Etsu Handotai Co Ltd | Single crystal production apparatus and single crystal production method |
| US8821636B2 (en) * | 2008-05-20 | 2014-09-02 | Shin-Etsu Handotai Co., Ltd. | Single-crystal manufacturing apparatus |
| JP5167960B2 (en) * | 2008-06-04 | 2013-03-21 | 株式会社Ｓｕｍｃｏ | Silicon single crystal growth equipment |
-
2010
- 2010-11-30 JP JP2010266920A patent/JP5691446B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6055443B2 (en) | Graphitization furnace and method for producing graphite | |
| JP2008178391A5 (en) | ||
| US20160208408A1 (en) | Upper heat shielding body, ingot growing apparatus having the same and ingot growing method using the same | |
| KR20100125388A (en) | Device for adjusting the locking point of an electrode | |
| CN109023525A (en) | A kind of moveable sapphire crystal growing furnace of pedestal | |
| KR101216523B1 (en) | Multi-crucible silicon ingot grower | |
| KR20120090648A (en) | An apparatus for silicon feeding into the silicon ingot grower | |
| JP5952795B2 (en) | Casting machine mold preheating apparatus and preheating method | |
| JP2012116691A5 (en) | Single crystal raw material melting apparatus and method | |
| JP6367469B2 (en) | Seed chuck and ingot growth apparatus including the same | |
| KR101376923B1 (en) | Ingot growing apparatus and method for growing ingot | |
| EP2716611B1 (en) | Apparatus for elongating a glass optical fibre preform | |
| JP6471700B2 (en) | Method for melting silicon raw material using recharge device | |
| CN208414631U (en) | A kind of moveable ingot furnace of side heater | |
| CN113580628A (en) | Device for preheating at least one mould | |
| KR101631368B1 (en) | Ingot growing apparatus | |
| KR101255891B1 (en) | Solid raw material supplying apparatus and single crystal growing device using the same | |
| JP6536428B2 (en) | Crystal growth system | |
| CN102912432A (en) | Ingot casting furnace and ingot casting process for large silicon ingots heavier than 800kg | |
| CN208869722U (en) | A kind of moveable sapphire crystal growing furnace of pedestal | |
| CN208618005U (en) | A kind of solar energy single crystal thermal field heat-proof device | |
| JP2012231001A5 (en) | ||
| JP5691446B2 (en) | Single crystal raw material melting apparatus and method | |
| CN210826764U (en) | Fishing net setting machine | |
| CN205188472U (en) | Quartz glass melting furnace |