JP2012099799A - Resin paste for die-bonding, method for manufacturing semiconductor device and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin paste for die-bonding capable of reducing a tact time when a semiconductor chip is bonded to a semiconductor supporting member by applying a die-bonding material thereon by the printing method, sufficiently preventing assembling troubles caused by insufficient hardening and excessive hardening and a residual solvent under a B stage, and manufacturing a semiconductor device having high reliability, with a good productivity, and a method for manufacturing a semiconductor device using the same.SOLUTION: The resin paste for die-bonding comprises (A) a photopolymerizable compound having a viscosity of 100 Pa s or less at 25°C, (B) a thermosetting compound, and (C) a thermoplastic elastomer, and amount of the solvent is equal to or less than 5 mass%.

Description

  The present invention relates to a method for manufacturing a semiconductor device and a resin paste for die bonding used therefor, and more specifically, a semiconductor chip such as an IC or LSI (hereinafter sometimes referred to as a chip) and a lead for mounting the chip. A method of manufacturing a semiconductor device in which a semiconductor support member such as a frame or an insulating support substrate (hereinafter also referred to as a substrate) is bonded by a bonding material (hereinafter also referred to as a die bonding material) and the method The present invention relates to a resin paste for die bonding used in the method.

  Au-Si eutectic alloy, solder, silver paste, etc. are conventionally known as bonding materials between semiconductor chips such as IC and LSI and semiconductor support members such as lead frames and insulating support substrates, so-called die bonding materials. .

  The Au—Si eutectic alloy has high heat resistance and moisture resistance, but has a large elastic modulus, and therefore tends to be easily broken when applied to a large chip. In addition, the Au—Si eutectic alloy has a drawback that it is expensive. On the other hand, although solder is cheap, it is inferior in heat resistance, and its elastic modulus is as high as that of an Au—Si eutectic alloy, so that it is difficult to apply it to a large chip. On the other hand, the silver paste is inexpensive, has high moisture resistance, has a lower elastic modulus than Au—Si eutectic alloy and solder, and has heat resistance that can be applied to a thermocompression bonding wire bonder at 350 ° C. ( For example, see Patent Document 1). Therefore, silver paste has been widely used among the above die bonding materials. However, as IC and LSI become more highly integrated and the chips become larger, it is difficult to spread and apply silver paste over the entire surface of the chip, and joining with silver paste is efficient. I can't say that.

  As a die bonding material that can cope with an increase in the size of a chip, an adhesive film using a specific polyimide resin, an adhesive film for die bonding in which a conductive filler or an inorganic filler is blended with a specific polyimide resin, and the like are known (for example, , See Patent Documents 2 to 4). However, these adhesive films tend to be inferior in low-temperature adhesion. Moreover, when sticking an adhesive film on a support substrate, a sticking device for cutting or punching the adhesive film into a chip size in advance and further sticking it is necessary. When the adhesive film is punched and used, waste is generated. In addition, since most of the support substrate has an inner layer wiring formed inside the substrate, when an adhesive film is pasted on a surface with many irregularities, voids are likely to occur, and reliability may be impaired.

  As a die bonding material other than the adhesive film, a resin paste for die bonding prepared by dissolving or dispersing an adhesive composition in a solvent is known (see, for example, Patent Documents 5 and 6). For such a resin paste, it is possible to select an adhesive composition having excellent low-temperature adhesiveness. Further, the resin paste has an advantage that it can be applied only to a necessary portion on the support substrate by a printing method such as screen printing. The coating film of the resin paste is B-staged by heat drying, and is heat-cured after mounting the semiconductor chip.

JP 2002-179769 A Japanese Patent Application Laid-Open No. 07-228697 Japanese Patent Laid-Open No. 06-145639 Japanese Patent Laid-Open No. 06-264035 JP 2006-342300 A JP 2007-246875 A

  In recent years, a BOC (Board On Chip) type semiconductor device in which a chip is mounted on an insulating support substrate such as an organic substrate has been widely used. This semiconductor device is often mass-produced, and a reduction in tact time is required.

  In an assembly process such as BOC, the following processes are conventionally performed. First, a resin paste for die bonding is applied on an insulating support substrate by a screen printing method. Next, this is heated and dried in an oven, whereby solvent evaporation and semi-curing of the resin paste for die bonding are performed, and the applied resin paste is made into a B-stage. Thereafter, the Si chip is pressure-bonded onto the insulating support substrate with the B-stage resin paste in between, and the die-bonding resin paste is completely cured by heating in an oven.

  The solvent is added to adjust the viscosity and thixotropy index of the resin paste for die bonding, and is added on the assumption that the solvent is volatilized after printing the paste. If the solvent is not sufficiently volatilized, defects such as voids and chip contamination may occur. Therefore, a process for volatilizing the solvent is required in the assembly process of the semiconductor device using the resin paste for die bonding. In general, the solvent is volatilized from the coating film by heating in the B-stage as described above. At this time, in order to prevent voids and cracks from being generated in the coating film due to rapid heating, it is desirable to raise the heating temperature slowly and to make it as low as possible. However, such B-staging usually requires more than 60 minutes, resulting in a large tact time loss.

  In a B-staging apparatus such as an oven, a substrate on which a plurality of resin pastes are applied is arranged for each batch. If the temperature distribution in the oven varies, there may be insufficient curing or excessive curing depending on the position in the oven, which may cause problems in later assembly of the semiconductor device. In order to reduce the tact time of the B-stage, when the heating temperature is increased and the drying is performed in a short time, the reaction control of the resin paste becomes difficult, and insufficient curing or excessive curing is more likely to occur. Also from the viewpoint of heat resistance of an insulating support substrate or the like, a process that is not as hot as possible is required for B-stage formation, and therefore it has been difficult to reduce tact time.

  The present invention has been made in view of the circumstances as described above, and can reduce tact time when a semiconductor chip is bonded by applying a die bonding material on a semiconductor support member by a screen printing method. In addition, a resin paste for die bonding that can sufficiently prevent an assembly failure caused by insufficient curing, excessive curing, or residual solvent in the B-stage, and can produce a highly reliable semiconductor device with high productivity, and An object of the present invention is to provide a method of manufacturing a semiconductor device using the same.

  In order to solve the above problems, the present invention comprises (A) a photopolymerizable compound having a viscosity at 25 ° C. of 100 Pa · s or less, (B) a thermosetting compound, and (C) a thermoplastic elastomer, The resin paste for die bonding whose content is 5 mass% or less is provided.

  According to the resin paste for die bonding of the present invention, having the above-described configuration, a coating film is formed on a semiconductor support member by a screen printing method, and a die bonding layer formed into a B stage by light irradiation is formed. Is possible. As a result, it is possible to sufficiently prevent an increase in tact time due to the process for volatilizing the solvent, an insufficient curing or excessive curing in the B-stage, an assembly failure due to the remaining solvent, and the like. According to the resin paste for die bonding of the present invention, a semiconductor device having excellent reliability can be manufactured with high productivity.

  Recently, there has been an active movement to minimize the impact on the ecosystem and improve the economic efficiency in the entire life cycle from production to disposal of chemical products. In the resin bonding for die bonding, it is desirable that the solvent content is reduced and the resin paste is used as effectively as possible after the B-stage. That is, in the case of a conventional resin paste, a coating film having a predetermined thickness is formed by volatilization of the solvent after printing. Therefore, as the ratio of the solvent increases, the resin paste becomes a component that becomes unnecessary after the B-stage. Will be included. On the other hand, the resin paste for die bonding of the present invention can have a small content ratio of the above unnecessary components.

  The resin paste for die bonding of the present invention may further contain (D) a photopolymerization initiator. Thereby, a photopolymerizable compound can be selectively B-staged in a short time.

  The resin paste for die bonding of the present invention can further contain (E) a curing accelerator. Thereby, it can be heat-cured at a lower temperature or in a shorter time.

  The resin paste for die bonding of the present invention can further contain (F) a filler. Thereby, it is possible to impart thixotropy or improve reliability.

  The resin paste for die bonding of this invention can further contain 1 or more types of additives selected from the group which consists of (G) defoamer, a foam breaker, and a foam suppressor. Thereby, printability can be improved.

  The resin paste for die bonding of the present invention preferably has a viscosity at 25 ° C. of 5 to 1000 Pa · s from the viewpoint of printability.

The resin bonding paste for die bonding of the present invention is a coating film having a thickness of 100 μm, which is irradiated with light having a wavelength of 365 nm at 25 ° C. in a nitrogen atmosphere having an oxygen concentration of 1 ppm or less. When irradiated at / cm ² , the melt viscosity at 100 ° C. of the irradiated film becomes 100 to 100000 Pa · s, and the irradiated film is further nitrogen at an oxygen concentration of 1 ppm or less at 140 ° C. for 5 hours. When heated in an atmosphere, it is preferable that the Young's elastic modulus at 25 ° C. of the heated coating film is 1 to 3000 MPa.

  When the melt viscosity is less than 100 Pa · s, the printed shape tends to be difficult to maintain after printing, and it becomes difficult to adjust the wetness depending on the load accuracy of the die bonder. When the melt viscosity exceeds 100,000 Pa · s, the chip does not get wet enough with the resin paste during die attachment, and the chip tends to peel off in the process after die attachment, and the void may be sufficiently filled during die attachment or sealing. There is a tendency for reliability to decline.

  When the Young elastic modulus is less than 1 MPa, the printed shape tends to be difficult to hold after printing, and depending on the load accuracy of the die bonder, the wet condition tends to be difficult to adjust, and when it exceeds 3000 MPa, There is a tendency that the substrate and the chip are easily warped.

  The present invention also provides a first step in which a resin paste for die bonding of the present invention is applied by screen printing on a semiconductor support member for mounting a semiconductor chip, and a coating film of the resin paste is applied, and the coating film is irradiated with light. And a third step of crimping the semiconductor support member and the semiconductor chip with the light-irradiated coating film interposed therebetween.

  According to the method for manufacturing a semiconductor device of the present invention, by using the die bonding resin paste of the present invention, it is possible to form a B-staged die bonding layer by coating film formation by screen printing and light irradiation. In addition, it is possible to sufficiently prevent an increase in tact time due to the process for volatilizing the solvent, assembly failure due to insufficient curing or excessive curing in the B-stage, residual solvent, and the like. According to the method for manufacturing a semiconductor device of the present invention, a semiconductor device having excellent reliability can be manufactured with high productivity.

  Recently, not only shortening of assembly time but also energy saving is further desired. According to the method for manufacturing a semiconductor device of the present invention, it is possible to reduce the thermal energy at the time of forming the B stage.

  Furthermore, according to the method for manufacturing a semiconductor device of the present invention, it is possible to prevent the following problems of the prior art.

  As semiconductor devices become more complex, smaller, and thinner, the chip, lead frame, and substrate are sensitive to heat. In the case of using a conventional die bonding resin paste for screen printing, semi-curing (B-stage) for improving adhesion before attaching a chip is performed at 140 ° C. or higher. When a high temperature is applied to the semiconductor support member before being bonded to the semiconductor chip, the organic substrate or the like may be warped to cause a bonding failure with the semiconductor chip. In particular, in the substrate for μ-BGA, as the semiconductor device is downsized, the thickness is reduced, and the substrate is likely to warp. According to the method of the present invention, by using the die bonding resin paste of the present invention, a B-stage can be formed at a low temperature and the above-mentioned problems can be prevented.

  As described above, conventionally, the viscosity and the thixotropy index of a resin paste for die bonding have been adjusted by adding a solvent. The solvent used at this time is added on the premise that it is almost or completely volatilized at the stage of B-stage, so it does not easily volatilize at room temperature and atmospheric pressure. A possible solvent is selected. However, if the solvent remains in the paste even after the B-stage is completed, the solvent volatilizes in the subsequent processes such as die attach, after cure, wire bonding, molding, sealing material curing, and reflow. As a result, voids may be formed, resulting in an assembly failure. In addition, when the solvent which volatilizes easily is used, the storage stability of the resin paste is deteriorated. Also, many solvents are harmful, and some have a risk of explosion when heated. On the other hand, the resin paste containing the specific component according to the present invention can be satisfactorily applied by the printing method even if the solvent content is 5% by mass or less, and prevents the above problems. can do.

  The present invention also provides a semiconductor device obtained by the method for manufacturing a semiconductor device of the present invention.

  According to the present invention, it is possible to reduce tact time when a semiconductor chip is bonded by applying a die bonding material on a semiconductor support member by a screen printing method, and in addition, insufficient curing or excessive curing in the B stage. Provides a resin paste for die bonding, which can sufficiently prevent assembly failure caused by residual solvent and can be manufactured with high productivity, and a semiconductor device manufacturing method using the same. can do.

  In addition, according to the resin bonding for die bonding of the present invention and the method for manufacturing a semiconductor device using the same, it is possible to form a B stage at a lower temperature than the conventional B stage by heating, and warp the substrate, outgas, Can suppress the environmental load.

  In addition, according to the resin paste for die bonding of the present invention and the method for manufacturing a semiconductor device using the same, it is possible to sufficiently suppress defects such as voids caused by the remaining of the solvent in the process after the B-stage. Can do.

It is a schematic cross section for demonstrating one Embodiment of the manufacturing method of a semiconductor device to this invention. It is a schematic cross section for demonstrating one Embodiment of the manufacturing method of a semiconductor device to this invention. It is a schematic cross section for demonstrating the printing factor in screen printing. It is a figure for demonstrating the coating film screen-printed.

  Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments. In the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified, and the dimensional ratio in the drawing is not limited to the illustrated ratio.

  The resin paste for die bonding of the present invention contains (A) a photopolymerizable compound having a viscosity at 25 ° C. of 100 Pa · s or less, (B) a thermosetting compound, and (C) a thermoplastic elastomer, Content is 5 mass% or less.

  The viscosity of the photopolymerizable compound refers to the viscosity when measured under conditions of a diameter of 28 mm, 3 ° cone, 100 rpm, 25 ° C. using an E-type viscometer (VISCONIC ELD) manufactured by Toki Sangyo Co., Ltd.

  In this specification, the solvent refers to a solvent used for diluting a resin composition in order to adjust the viscosity or thixotropy index of a conventional resin paste for die bonding, and includes, for example, a photoreactive group and a thermosetting group. Such as an organic compound having a molecular weight of 500 or less and being liquid at 25 ° C.

In the present embodiment, a high pressure mercury lamp is used as the die bonding resin paste in a nitrogen atmosphere having an oxygen concentration of 1 pp or less, and then an ultraviolet ray is exposed with an exposure amount of 1000 mJ / cm ^2. The resin paste before exposure and heating when the temperature is raised to 30 minutes, maintained at that temperature for 30 minutes, then lowered to 40 ° C over 30 minutes, and then heated in an oven at 200 ° C for 2 hours The ratio of the mass of the resin paste after exposure and heating with respect to the mass of is determined. If this ratio is 95% or more, it can be determined that the content of the solvent is 5% by mass or less.

  From the viewpoint of reliability, the die bonding resin paste preferably has a solvent content of 5% by mass or less, and more preferably substantially does not contain a solvent.

  (A) Among the photopolymerizable compounds exemplified below, those having a viscosity at 25 ° C. of 100 Pa · s or less can be suitably used as the photopolymerizable compound. In addition, in this invention, in the range which does not impair the effect of this invention, the photopolymerizable compound whose viscosity in 25 degreeC exceeds 100 Pa.s is used together with the photopolymerizable compound whose viscosity in 25 degreeC is 100 Pa.s or less. May be.

Preferred examples of the photopolymerizable compound include compounds having an ethylenically unsaturated group. Examples of the ethylenically unsaturated group include vinyl group, allyl group, propargyl group, butenyl group, ethynyl group, phenylethynyl group, maleimide group, nadiimide group, (meth) acryl group and the like. From the viewpoint of reactivity, a (meth) acryl group is preferred. Examples of the compound containing such a (meth) acrylic group (CH═CR—CO—; R is H or CH ₃ ) include monofunctional (meth) acrylate compounds and polyfunctional (meth) acrylate compounds. Here, monofunctional and polyfunctional refers to an ethylenically unsaturated group. In this invention, it is preferable that a polyfunctional (meth) acrylate compound, especially a bifunctional (meth) acrylate compound are included. These are used singly or in combination of two or more.

  The bifunctional or higher (meth) acrylate is not particularly limited, but diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethylene Glycol diacrylate, polyethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane dimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1, Bifunctional (meth) acrylate such as 6-hexanediol dimethacrylate, trimethylol proppant Acrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate and other trifunctional or more (meth) acrylates, A compound represented by the following general formula (A-1), 1,3-acryloyloxy-2-hydroxypropane, 1,2-methacryloyloxy-2-hydroxypropane, triacrylate of tris (β-hydroxyethyl) isocyanurate , Polyfunctional urethane acrylate or urethane methacrylate, polyfunctional urea acrylate or urea methacrylate, etc. It is.

上記一般式（Ａ−１）中、Ｒ^１９及びＲ^２０は各々独立に、水素原子又はメチル基を示し、ｇ及びｈは各々独立に、１〜２０の整数を示す。

In the general formula (A-1), R ¹⁹ and R ²⁰ each independently represent a hydrogen atom or a methyl group, and g and h each independently represent an integer of 1 to 20.

  Monofunctional (meth) acrylates include phenol EO-modified (meth) acrylate (EO; ethylene oxide), phenol PO-modified (meth) acrylate (PO; propylene oxide), nonylphenol EO-modified (meth) acrylate, and nonylphenol PO-modified (meta). ) Acrylate, phenolic hydroxyl group-containing (meth) acrylate, 2-hydroxyethyl acrylate, hydroxyl group-containing (meth) acrylate such as 2-hydroxyethyl methacrylate, phenylphenol glycidyl ether (meth) acrylate, phenoxyethyl (meth) acrylate, benzyl ( Aromatic (meth) acrylates such as (meth) acrylate, imide group-containing (meth) acrylate, carboxyl group-containing (meth) acrylate, isobornyl (meta) Isobornyl group-containing (meth) acrylates such as acrylate, dicyclopentadienyl group-containing (meth) acrylate, and the like.

  When monofunctional (meth) acrylate is used, at least one selected from a urethane group, an isocyanuric group, an imide group and a hydroxyl group from the viewpoints of adhesion to an adherend after B-stage formation, adhesion after curing, and heat resistance. It preferably has a kind of functional group. In particular, a monofunctional (meth) acrylate having an imide group is preferable.

  Furthermore, as photopolymerizable compounds, vinyl groups such as styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, ( A compound having a (meth) acrylamide group can also be used.

  When a bifunctional (meth) acrylate compound is used, the viscosity of the resin paste is adjusted so that the content ratio of the bifunctional (meth) acrylate compound in the photopolymerizable compound (A) according to the present invention is 20 to 100% by mass (printing). From the viewpoint of the property.

  Moreover, it is preferable that the resin paste for die bonding which concerns on this embodiment contains the compound which has a function of both photocurability and thermosetting as a photopolymerizable compound from a wettability or adhesive viewpoint.

  As such a compound, a (meth) acrylate compound having a (meth) acryl group as a photocurable group and an epoxy group as a thermosetting group can be preferably used.

  The 5% weight reduction temperature of the (meth) acrylate having an epoxy group is preferably 150 ° C. or higher, more preferably 180 ° C. or higher, from the viewpoints of storage stability, adhesiveness, low outgas resistance, heat resistance and moisture resistance reliability, Preferably it is 200 degreeC or more. The 5% weight loss temperature of the monofunctional (meth) acrylate having an epoxy group is preferably 150 ° C. or higher in terms of suppressing volatilization or segregation on the surface due to heat drying during film formation, and outgas during thermosetting. It is more preferably 180 ° C. or higher, more preferably 200 ° C. or higher in that it can suppress voids and peeling due to adhesion and deterioration of adhesiveness, and it can suppress voids and peeling due to volatilization of unreacted components during reflow. Most preferably, the temperature is 260 ° C. or higher. The monofunctional (meth) acrylate having such an epoxy group preferably has an aromatic ring. By using a polyfunctional epoxy resin having a 5% weight loss temperature of 150 ° C. or more as a raw material for monofunctional (meth) acrylate, high heat resistance can be obtained.

  The (meth) acrylate compound having an epoxy group is not particularly limited, but in addition to glycidyl methacrylate, glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 4-hydroxybutyl methacrylate glycidyl ether, functional groups that react with epoxy groups and Examples thereof include compounds obtained by reacting a compound having an ethylenically unsaturated group with a polyfunctional epoxy resin. Although it does not specifically limit as a functional group which reacts with the said epoxy group, An isocyanate group, a carboxyl group, a phenolic hydroxyl group, a hydroxyl group, an acid anhydride, an amino group, a thiol group, an amide group etc. are mentioned. These compounds can be used individually by 1 type or in combination of 2 or more types.

  The (meth) acrylate compound having an epoxy group is, for example, in the presence of triphenylphosphine or tetrabutylammonium bromide, a polyfunctional epoxy resin having at least two epoxy groups in one molecule, and 1 equivalent of the epoxy group. It is obtained by reacting 0.1 to 0.9 equivalent of (meth) acrylic acid. Also, by reacting a polyfunctional isocyanate compound with a hydroxy group-containing (meth) acrylate and a hydroxy group-containing epoxy compound in the presence of dibutyltin dilaurate, or reacting a polyfunctional epoxy resin with an isocyanate group-containing (meth) acrylate. And glycidyl group-containing urethane (meth) acrylate and the like.

  The (meth) acrylate compound having an epoxy group should be a high-purity product in which alkali metal ions, alkaline earth metal ions, halogen ions, particularly chlorine ions and hydrolyzable chlorine are reduced to 1000 ppm or less as impurity ions. However, it is preferable from the viewpoint of preventing electromigration and preventing corrosion of metal conductor circuits. For example, the impurity ion concentration can be satisfied by using a polyfunctional epoxy resin with reduced alkali metal ions, alkaline earth metal ions, halogen ions, and the like as a raw material. The total chlorine content can be measured according to JIS K7243-3.

  The (meth) acrylate compound having an epoxy group satisfying the above heat resistance and purity is not particularly limited, but bisphenol A type (or AD type, S type, F type) glycidyl ether, water-added bisphenol A type glycidyl. Ether, ethylene oxide adduct bisphenol A and / or F type glycidyl ether, propylene oxide adduct bisphenol A and / or F type glycidyl ether, phenol novolac resin glycidyl ether, cresol novolac resin glycidyl ether, bisphenol A novolac resin Glycidyl ether, naphthalene resin glycidyl ether, trifunctional (or tetrafunctional) glycidyl ether, dicyclopentadiene phenolic resin glycidyl ether, dimer acid glycidyl ether Ether, 3 glycidylamine functional type (or tetrafunctional) include those glycidyl amines of naphthalene resins as a raw material.

In particular, in order to improve thermocompression bonding, low stress properties, and adhesiveness, the number of epoxy groups and ethylenically unsaturated groups is preferably 3 or less, respectively, and in particular, the number of ethylenically unsaturated groups is 2. It is preferable that it is one or less. Although it does not specifically limit as such a compound, The compound etc. which are represented by the following general formula (A-2), (A-3), (A-4), (A-5) or (A-6) Is preferably used. In the following general formulas (A-2) to (A-6), R ¹² and R ¹⁶ represent a hydrogen atom or a methyl group, R ¹⁰ , R ¹¹ , R ¹³ and R ¹⁴ represent a divalent organic group, R ¹⁵ is an organic group having an epoxy group, and R ¹⁷ and R ¹⁸ are each an organic group having an ethylenically unsaturated group, and the rest are organic groups having an epoxy group. Furthermore, f in (A-5) represents an integer of 0 to 3.

  In this embodiment, the 5% weight reduction temperature of the photopolymerizable compound (for example, (meth) acrylate compound) is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, and 150 ° C. or higher. Is still more preferable, and it is still more preferable that it is 180 degreeC or more. The 5% mass reduction temperature here is a temperature difference of 10 ° C./min with a nitrogen flow (using a differential thermothermal gravimetric simultaneous measurement apparatus (manufactured by SII Nanotechnology: TG / DTA6300) for the photopolymerizable compound. 400 ml / min). For example, when a monofunctional (meth) acrylate having a high 5% weight loss temperature is used, it is possible to suppress volatilization of unreacted monofunctional (meth) acrylate remaining after being B-staged by exposure during thermocompression bonding or thermosetting. .

  (A) As a compounding quantity of a photopolymerizable compound, it is preferable that it is 10-80 mass% on the basis of the resin paste whole quantity from a viewpoint of the viscosity adjustment of a resin paste.

  In this embodiment, it is preferable that (A) a photopolymerizable compound and (D) a photopolymerization initiator are used together, and the reaction of the photocurable component is almost completed by B-staging by light irradiation.

  (D) As a photoinitiator, the compound which produces | generates a radical, an acid, or a base by light irradiation can be used. Among them, from the viewpoint of corrosion resistance such as migration, it is preferable to use a compound that generates radicals and / or bases by light irradiation, and generates radicals from the point that heat treatment after exposure is unnecessary and high sensitivity. A compound is more preferably used. A compound that generates an acid or a base by light irradiation exhibits a function of promoting the polymerization and / or reaction of the epoxy resin.

  Examples of the compound that generates radicals by light irradiation include 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethane-1- ON, 1-hydroxy-cyclohexyl-phenyl-ketone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropanone-1, 2,4-diethylthioxanthone, 2-ethylanthraquinone, phenanthrenequinone, etc. Aromatic ketones; benzyl derivatives such as benzyldimethyl ketal; 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-di (m-methoxyphenyl) Imidazole dimer, 2- (o-fluorophenyl) -4,5-phenylimidazole Dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer, 2- (p-methoxyphenyl) -4,5-diphenylimidazole dimer, 2,4-di (p- 2,4,5-triarylimidazole dimers such as methoxyphenyl) -5-phenylimidazole dimer and 2- (2,4-dimethoxyphenyl) -4,5-diphenylimidazole dimer; 9-phenyl Acridine derivatives such as acridine and 1,7-bis (9,9′-acridinyl) heptane; bis (2,6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphosphine oxide and bis (2,4,4) 6, -Trimethylbenzoyl) -bisacylphosphine oxides such as phenylphosphine oxide; oxime ester compounds; Imide compounds. These can be used alone or in combination of two or more.

  Among the compounds that generate radicals upon irradiation with light, 2,2-dimethoxy-1,2-diphenylethane-1-one and 2-benzyl-2 are preferable in terms of solubility in an adhesive composition containing no solvent. -Dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2-diphenylethane-1-one, 2-methyl-1- (4- (methylthio) phenyl) -2 -Morpholinopropan-1-one is preferably used. In addition, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1,2,2-dimethoxy-1,2 can be formed into a B-stage by exposure even in an air atmosphere. -Diphenylethane-1-one and 2-methyl-1- (4- (methylthio) phenyl) -2-morpholinopropan-1-one are preferably used.

  By further adding a compound (photobase generator) that generates a base upon exposure to the resin paste for die bonding according to the present embodiment, the high-temperature adhesiveness and moisture resistance of the resin paste to the adherend are further improved. Can do. This is because the base generated from the photobase generator acts as a curing catalyst for the epoxy resin efficiently, so that the crosslinking density can be further increased, and the generated curing catalyst corrodes the substrate and the like. This is thought to be because there are few. Moreover, by including a photobase generator in the adhesive composition, the crosslink density can be improved, and the outgas during standing at high temperature can be further reduced. Furthermore, it is considered that the curing process temperature can be lowered and shortened.

  The photobase generator can be used without particular limitation as long as it is a compound that generates a base upon irradiation with radiation (light). As the base to be generated, a strongly basic compound is preferable in terms of reactivity and curing speed. More specifically, the pKa value in the aqueous solution of the base generated by the photobase generator is preferably 7 or more, and more preferably 8 or more. pKa is generally the logarithm of the acid dissociation constant as a basic indicator.

  Examples of the base generated by irradiation include imidazole derivatives such as imidazole, 2,4-dimethylimidazole and 1-methylimidazole, piperazine derivatives such as piperazine and 2,5-dimethylpiperazine, piperidine and 1,2-dimethylpiperidine. Piperidine derivatives such as trimethylamine derivatives such as trimethylamine, triethylamine and triethanolamine, pyridine derivatives substituted with an amino group or alkylamino group at the 4-position such as 4-methylaminopyridine and 4-dimethylaminopyridine, pyrrolidine, n -Pyrrolidine derivatives such as methylpyrrolidine, alicyclic amine derivatives such as 1,8-diazabiscyclo (5,4,0) undecene-1 (DBU), benzylmethylamine, benzyldimethylamine and benzyldi Benzylamine derivatives, proline derivatives, such as ethylamine, triethylenediamine, morpholine derivatives, primary alkyl amines.

  Other photopolymerization initiators include oxime derivatives that generate primary amino groups upon irradiation with actinic rays (light), and 2-methyl-1- (4- (methylthio) phenyl) that is commercially available as a photoradical generator. 2-morpholinopropan-1-one (manufactured by Ciba Specialty Chemicals, Irgacure 907), 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1 (manufactured by Ciba Specialty Chemicals, Irgacure 369), 3,6-bis- (2methyl-2morpholino-propionyl) -9-N-octylcarbazole (manufactured by ADEKA, Optomer N-1414), hexaarylbisimidazole derivative (halogen, alkoxy group, nitro group And a substituent such as a cyano group may be substituted with a phenyl group) Benzoisooxazole oxazolone derivative can be used carbamate derivatives.

  (D) As a compounding quantity of a photoinitiator, it is preferable that it is 0.01-5 mass% on the basis of resin paste whole quantity from a viewpoint of the reaction sensitivity and stability of a resin paste.

  (B) As a thermosetting compound, the compound which has an epoxy group, a phenol resin, the imide compound which has at least 2 thermosetting imide group in 1 molecule, etc. are mentioned. These are used singly or in combination of two or more.

  In addition, it is assumed that the thermosetting compound contained in the resin paste for die bonding according to the present embodiment does not react in B-stage formation by light irradiation, but reacts in subsequent heating and further C-stage formation. Therefore, it is preferable that the viscosity does not increase by 5% or more of the original viscosity even when irradiated with light in the presence of the photocuring initiator, that is, a system in which only the photocuring initiator and the thermosetting compound are present.

  Although it does not specifically limit as a compound which has an epoxy group, For example, glycidyl ether type epoxy compounds, such as ethylene glycol diglycidyl ether, diethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, dipropylene glycol diglycidyl ether, glycerin triglycidyl ether Glycidyl ester type epoxy compound made from polycarboxylic acid such as dimer acid and its anhydride as raw material; aliphatic epoxy compound such as glycidyl amine type epoxy compound made from aliphatic amine as raw material, hydroquinone, methyl hydroquinone, dimethyl hydroquinone, Trimethylhydroquinone, resorcinol, methylresorcinol, catechol, methylcatechol, biphenol, tetramethylbipheno Dihydroxynaphthalene, dihydroxymethylnaphthalene, dihydroxydimethylnaphthalene, bis (4-hydroxyphenyl) ketone, bis (4-hydroxy-3,5-dimethylphenyl) ketone, bis (4-hydroxy-3,5-dichlorophenyl) ketone Bis (4-hydroxyphenyl) sulfone, bis (4-hydroxy-3,5-dimethylphenyl) sulfone, bis (4-hydroxy-3,5-dichlorophenyl) sulfone, bis (4-hydroxyphenyl) hexafluoropropane, Bis (4-hydroxy-3,5-dimethylphenyl) hexafluoropropane, bis (4-hydroxy-3,5-dichlorophenyl) hexafluoropropane, bis (4-hydroxyphenyl) dimethylsilane, bis (4-hydroxy-3) 5-dimethylphenyl) dimethylsilane, bis (4-hydroxy-3,5-dichlorophenyl) dimethylsilane, bis (4-hydroxyphenyl) methane, bis (4-hydroxy-3,5-dichlorophenyl) methane, bis (4- Hydroxy-3,5-dibromophenyl) methane, 2,2-bis (4-hydroxyphenyl) propane, 2,2-bis (4-hydroxy-3,5-dimethylphenyl) propane, 2,2-bis (4 -Hydroxy-3,5-dichlorophenyl) propane, 2,2-bis (4-hydroxy-3-methylphenyl) propane, 2,2-bis (4-hydroxy-3-chlorophenyl) propane, bis (4-hydroxyphenyl) ) Ether, bis (4-hydroxy-3,5-dimethylphenyl) ether, bis (4-hydro) Xy-3,5-dichlorophenyl) ether, 9,9-bis (4-hydroxyphenyl) fluorene, 9,9-bis (4-hydroxy-3-methylphenyl) fluorene, 9,9-bis (4-hydroxy-) 3-chlorophenyl) fluorene, 9,9-bis (4-hydroxy-3-bromophenyl) fluorene, 9,9-bis (4-hydroxy-3-fluorophenyl) fluorene, 9,9-bis (4-hydroxy-) 3-methoxyphenyl) fluorene, 9,9-bis (4-hydroxy-3,5-dimethylphenyl) fluorene, 9,9-bis (4-hydroxy-3,5-dichlorophenyl) fluorene, 9,9-bis ( Jigs obtained by condensation of one or more of 4-hydroxy-3,5-dibromophenyl) fluorene and the like with epihalohydrin Compounds having two epoxy groups in one molecule, such as an epoxy compound having an aromatic ring such as glycidyl compound can be mentioned.

  A phenol glycidyl ether type epoxy resin can also be used. Examples of such resins include bisphenol A, bisphenol AD, bisphenol S, bisphenol F, or a condensate of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolac resin, glycidyl ether of cresol novolac resin, and bisphenol A novolac resin. A glycidyl ether etc. are mentioned. These can be used alone or in combination of two or more.

  When the epoxy resin is blended as the thermosetting compound, the blending amount is preferably 10 to 70% by mass based on the total amount of the resin paste from the viewpoint of heat resistance and adhesiveness.

  The phenol resin has at least two phenolic hydroxyl groups in the molecule, and examples thereof include phenol novolak resin, cresol novolac resin, bisphenol A type novolak resin, poly-p-vinylphenol, phenol aralkyl resin and the like. . These are used singly or in combination of two or more.

  When the phenol resin is blended as the thermosetting compound, the blending amount is preferably 1 to 20% by mass based on the total amount of the resin paste in consideration of the reliability of the package.

  From the viewpoint of improving the package reliability, it is preferable to use an epoxy resin and a phenol resin in combination. In this case, it is preferable that the compounding quantity of an epoxy resin and a phenol resin is 10-70 mass% and 1-20 mass% on the basis of the resin paste whole quantity, respectively.

  Examples of imide compounds having at least two thermosetting imide groups in one molecule include orthobismaleimide benzene, metabismaleimide benzene, parabismaleimide benzene, and 1,4-bis (p-maleimidocumyl) benzene. 1,4-bis (m-maleimidocumyl) benzene and the like. These are used singly or in combination of two or more.

  Moreover, it is preferable to use the imide compound represented by the following formulas (B-1) to (B-3).

式中、ＸおよびＹは、Ｏ、ＣＨ_２、ＣＦ_２、ＳＯ_２、Ｓ、ＣＯ、Ｃ（ＣＨ_３）_２またはＣ（ＣＦ_３）_２を示し；Ｒ_１、Ｒ_２、Ｒ_３、Ｒ_４、Ｒ_５、Ｒ_６、Ｒ_７およびＲ_８は、それぞれ独立に水素、低級アルキル基、低級アルコキシ基、フッ素、塩素または臭素を示し；Ｄはエチレン性不飽和二重結合を有するジカルボン酸残基を示し；ｍは０〜４の整数を示す。

In which X and Y represent O, CH ₂ , CF ₂ , SO ₂ , S, CO, C (CH ₃ ) ₂ or C (CF ₃ ) ₂ ; R ₁ , R ₂ , R ₃ , R ₄ , R ₅ , R ₆ , R ₇ and R ₈ each independently represent hydrogen, a lower alkyl group, a lower alkoxy group, fluorine, chlorine or bromine; D represents a dicarboxylic acid residue having an ethylenically unsaturated double bond M represents an integer of 0 to 4;

  Examples of the imide compound of the formula (B-1) include 4,4-bismaleimide diphenyl ether, 4,4-bismaleimide diphenylmethane, 4,4-bismaleimide-3,3′-dimethyl-diphenylmethane, 4,4- Bismaleimide diphenyl sulfone, 4,4-bismaleimide diphenyl sulfide, 4,4-bismaleimide diphenyl ketone, 2,2′-bis (4-maleimidophenyl) propane, 4,4-bismaleimide diphenylfluoromethane, 1,1 1,3,3,3-hexafluoro-2,2-bis (4-maleimidophenyl) propane and the like.

  Examples of the imide compound of the formula (B-2) include bis [4- (4-maleimidophenoxy) phenyl] ether, bis [4- (4-maleimidophenoxy) phenyl] methane, and bis [4- (4-maleimide). Phenoxy) phenyl] fluoromethane, bis [4- (4-maleimidophenoxy) phenyl] sulfone, bis [4- (3-maleimidophenoxy) phenyl] sulfone, bis [4- (4-maleimidophenoxy) phenyl] sulfide, bis [4- (4-maleimidophenoxy) phenyl] ketone, 2,2-bis [4- (4-maleimidophenoxy) phenyl] propane, 1,1,1,3,3,3-hexafluoro-2,2- And bis [4- (4-maleimidophenoxy) phenyl] propane.

  When mix | blending an imide compound as a thermosetting compound, it is preferable that the compounding quantity is 5-20 mass% on the basis of the resin paste whole quantity in consideration of the storage stability of a paste.

  It is preferable that the resin paste for die bonding of this embodiment further contains (E) a curing accelerator from the viewpoint of being C-staged at a lower temperature or in a shorter time.

  (E) Curing accelerators include imidazoles, imidazolidines, dicyandiamide derivatives, dicarboxylic acid dihydrazides, organic phosphines (triphenylphosphine and derivatives thereof, phosphine oxides, diphosphines, tetraphenylphosphonium tetraphenylborate, 2-ethyl Phosphine-boron compounds such as -4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo (5,4,0) undecene-7-tetraphenylborate), tin compounds, boron compounds and the like.

  (E) As a compounding quantity of a hardening accelerator, it is preferable that it is 0.1-5 mass% on the basis of the resin paste whole quantity from the viewpoint of the reaction sensitivity and stability of a resin paste.

  The resin paste for die bonding according to the present embodiment can contain a thermal polymerization initiator such as an organic peroxide.

  Examples of the thermoplastic elastomer (C) include polystyrene resins, polyethylene resins, polypropylene resins, polyester resins, butadiene resins, and polybutadiene acrylonitrile copolymers. Among these, a copolymer having a carboxyl group is preferable.

  Specific examples of the copolymer include those having a main chain of a copolymer of butadiene, acrylonitrile and another polymerizable compound as required, and having a carboxyl group at at least one of its ends. From the viewpoint of printability, adhesive strength, and workability, the number average molecular weight of the copolymer is preferably 500 to 10,000, and more preferably 1000 to 7000. Furthermore, a butadiene-acrylonitrile copolymer having a carboxyl group represented by the following general formula (1) is more preferable.

一般式（１）中、ｘ／ｙは９５／５〜５０／５０であり、ｎは５〜５０の整数である。

In general formula (1), x / y is 95/5 to 50/50, and n is an integer of 5 to 50.

  The compound represented by the general formula (1) can also be obtained as a commercial product. For example, Hycar CTBN-2009 × 162, CTBN-1300 × 31, CTBN-1300 × 8, CTBN-1300 × 13, and CTBNX-1300 × 9 (all manufactured by PTI JAPAN Co., Ltd.) are commercially available.

  Further, as a butadiene-based resin having a carboxyl group, NISSO-PB-C-2000 (trade name, manufactured by Nippon Soda Co., Ltd., trade name), which is a low molecular weight liquid polybutadiene having a carboxyl group. Etc.

  These can be used alone or in combination of two or more.

  (C) The Tg of the thermoplastic elastomer is preferably 40 ° C. or lower, more preferably 20 ° C. or lower, even more preferably 0 ° C. or lower, and most preferably −20 ° C. or lower. When this Tg exceeds 40 ° C., the viscosity of the resin paste tends to increase. Moreover, there is a tendency that a high temperature of 150 ° C. or higher is required when thermocompression bonding to an adherend. Here, Tg of the thermoplastic elastomer refers to a value measured by DSC (Q200) manufactured by TA Instrument.

  The resin paste for die bonding according to the present embodiment preferably further contains (C) a thermoplastic resin other than the thermoplastic elastomer from the viewpoint of imparting an appropriate elastic modulus and wettability.

  (C) As a compounding quantity of a thermoplastic elastomer, it is preferable that it is 10-85 mass% on the basis of resin paste whole quantity from a viewpoint of the low elasticity of resin paste hardened | cured material.

  As thermoplastic resins, (meth) acrylic resins, polyester resins, polyether resins, polyimide resins, polyamide resins, polyamideimide resins, polyetherimide resins, polyurethane resins, polyurethaneimide resins, polyurethaneamideimide resins, siloxane polyimide resins , Polyesterimide resins, copolymers thereof, precursors thereof (polyamic acid, etc.), polybenzoxazole resins, phenoxy resins, polysulfone resins, polyethersulfone resins, polyphenylene sulfide resins, polycarbonate resins, polyether ketone resins, novolaks Resin etc. are mentioned.

  These can be used alone or in combination of two or more.

  The Tg of the thermoplastic resin is preferably 150 ° C. or lower, more preferably 120 ° C. or lower, even more preferably 100 ° C. or lower, and most preferably 80 ° C. or lower. When this Tg exceeds 150 ° C., the viscosity of the resin paste tends to increase. Moreover, there is a tendency that a high temperature of 150 ° C. or higher is required when thermocompression bonding to an adherend. Here, “Tg” means a main dispersion peak temperature when a thermoplastic resin is formed into a film, and using a rheometrics viscoelasticity analyzer “RSA-2” (trade name), a film thickness of 100 μm, The tan δ peak temperature in the vicinity of Tg when measured under conditions of a temperature rising rate of 5 ° C./min, a frequency of 1 Hz, and a measurement temperature of −150 to 300 ° C. is defined as a main dispersion peak temperature.

  The weight average molecular weight of the thermoplastic resin is preferably controlled within a range of 1000 to 500,000, and more preferably 1000 to 300,000 in terms of highly compatible thermocompression bonding and high temperature adhesiveness. Here, the “weight average molecular weight” means a weight average molecular weight when measured in terms of polystyrene using high performance liquid chromatography “C-R4A” (trade name) manufactured by Shimadzu Corporation.

  As a compounding quantity of a thermoplastic resin, it is preferable that it is 10-80 mass% on the basis of the resin paste whole quantity from a viewpoint of the elasticity modulus of paste hardened | cured material, or reliability.

  The die bonding resin paste of this embodiment preferably further contains (F) filler from the viewpoints of reliability, thixotropy, heat dissipation and the like.

  Examples of the filler (F) include conductive (metal) fillers such as silver powder, gold powder, and copper powder; inorganic fillers such as silica, alumina, titania, glass, iron oxide, and ceramic. Among these, conductive (metal) fillers such as silver powder, gold powder, and copper powder can be added for the purpose of imparting conductivity, heat conductivity, or thixotropy to the adhesive. In addition, inorganic fillers such as silica, alumina, titania, glass, iron oxide, and ceramic can be added for the purpose of imparting low thermal expansion, low moisture absorption, and thixotropy to the adhesive. These can be used alone or in combination of two or more.

  The compounding quantity of a filler can be 5-70 mass% on the basis of resin paste whole quantity.

  From the viewpoint of suppressing the generation of bubbles and voids during printing, the resin paste for die bonding of this embodiment is one or more selected from the group consisting of (G) a defoamer, a foam breaker, and a foam suppressor. It is preferable to further contain an additive.

  Specific examples of the additive (G) include silane coupling agents, titanium coupling agents, nonionic surfactants, fluorine surfactants, and silicone additives. These can be used alone or in combination of two or more.

  The compounding quantity of the said additive can be 0.01-10 mass% on the basis of resin paste whole quantity.

  The viscosity (25 ° C.) of the resin paste is preferably 5 to 1000 Pa · s, more preferably 20 to 500, and particularly preferably 50 to 200 Pa · s. It is preferable from the viewpoint of printing workability that the viscosity of the resin paste is 5 to 1000 Pa · s. The viscosity of the resin paste is the printing speed in screen printing, descent offset (printing pressure), plate separation speed, squeegee angle, distance between metal mask and semiconductor support member (clearance), shape of metal mask opening, side of metal mask opening It is preferable to adjust appropriately according to the printing factors such as the surface treatment of, for example, when a mesh or the like is stretched on the mask opening as in a screen mesh plate, etc. The range is preferably 100 Pa · s. In the case of a stencil plate or the like, it is preferably adjusted to a range of 20 to 500 Pa · s. Moreover, when many voids remain in the die bonding layer after B-stage formation, the viscosity is preferably adjusted to 150 Pa · s or less.

  The thixotropy index of the resin paste is preferably 1.5 to 10.0, more preferably 2.0 to 7.0, and particularly preferably 2.0 to 5.0. When the thixotropy index of the resin paste is 1.5 or more, it is preferable from the viewpoint of suppressing the occurrence of sagging or the like in the paste supplied / applied by the screen printing method and maintaining a good printed shape. Further, the thixotropy index is preferably 10.0 or less from the viewpoint of suppressing the occurrence of “chips” and / or scum in the paste supplied and applied by the screen printing method.

  The said viscosity shall be a value when it measures by 25 degreeC and rotation speed 0.5rpm using an E-type rotational viscometer. The thixotropy index is an E-type viscometer and the ratio between the value measured at 25 ° C. at a rotation speed of 0.5 rpm and the value measured at a rotation speed of 5 rpm (thixotropy index = [at 0.5 rpm Viscosity] / [viscosity at 5 rpm]).

  Next, a method for manufacturing a semiconductor device of the present invention will be described.

  1 and 2 are schematic cross-sectional views for explaining an embodiment of a method of manufacturing a semiconductor device according to the present invention.

  The manufacturing method of the semiconductor device of this embodiment is a first step in which a resin paste for die bonding according to this embodiment is applied by screen printing to provide a resin paste coating (see FIG. 1A). And a second step (see (b) of FIG. 1) of photocuring the photocurable component by light irradiation to the coating film, and the semiconductor support member and the semiconductor chip sandwiching the film irradiated with light. And a third step (see FIG. 1C) for bonding by pressure bonding. The semiconductor device manufacturing method of the present embodiment further includes a step of electrically connecting the semiconductor chip and the semiconductor support member after these steps through wire bonding, and then sealing the semiconductor chip with a resin ((FIG. 2 ( a) and (b)).

  In the present embodiment, the insulating support substrate 10 provided with the electrodes 12 is used as the semiconductor support member. As the semiconductor support member, for example, a lead frame such as a 42 alloy lead frame or a copper lead frame; polyimide resin Plastic film such as epoxy resin, polyimide resin, etc .; base material such as glass nonwoven fabric impregnated and cured with plastic such as polyimide resin, epoxy resin, polyimide resin; insulating support substrate made of ceramics such as alumina And a lower semiconductor chip in the case of a stack package; a glass substrate in the case of a display and the like.

  In the screen printing according to the present embodiment, a mask 20 having an opening is disposed on the insulating support substrate 10, and a resin paste for die bonding is embedded in the opening by moving the squeegee 40 to apply the resin paste. A film 30 is formed.

  Screen printing can be performed using a printing machine. The printing machine is preferably capable of selecting printing factors such as printing speed, printing pressure, squeegee angle, plate separation speed, and distance (clearance) between the semiconductor support member, which is the printing object, and the mask. FIG. 3 is a schematic cross-sectional view for explaining a printing factor in screen printing. The moving speed of the squeegee 40 (arrow A in FIG. 3) is preferably 1 to 200 mm / second. The printing pressure is preferably 0 to 30N. The printing pressure refers to the pressure applied by the squeegee 40 in the direction perpendicular to the mask 20, and when the printing pressure is 0 N, the squeegee 40 and the mask 20 are not in contact with each other. The squeegee angle (B in FIG. 3) is preferably 10 to 90 °. The plate separation speed is preferably 0.1 to 10 mm / s. The plate separation speed refers to a speed (arrow C in FIG. 3) at which the semiconductor support member 10 and the mask 20 are separated after the mask opening is filled with the resin paste. The clearance (D in FIG. 3) is preferably 0 to 10 mm. When the clearance is 0 mm, the semiconductor support member 10 and the mask 20 are in contact with each other.

  In the present embodiment, by adjusting the thickness of the mask 20, the film thickness after the resin paste is applied, that is, the thickness of the coating film 30 can be adjusted. A metal mask or the like can be used as the mask. The mask can be selected depending on the application, and a mask having a mesh opening may be used.

  The thickness of the coating film 30 is preferably 500 μm or less, more preferably 30 to 200 μm, from the viewpoint of the printed shape, although it depends on the design and application of the semiconductor device. If the thickness is less than 30 μm, the reliability tends to decrease.

  Examples of the light irradiation in the second step include ultraviolet irradiation using an exposure apparatus such as a high-pressure mercury lamp. Examples of other light sources include a low-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a metal halide lamp, and an LED-UV lamp.

  The wavelength of light used for light irradiation is preferably 10 to 400 nm from the viewpoint of the absorption wavelength of a commercially available photopolymerization initiator.

The light irradiation is preferably 1 mJ / cm ² or more from the viewpoint of outgas suppression and tackiness reduction, and more preferably 1 to 4000 mJ / cm ² from the viewpoint of tackiness reduction and tact time. Preferably, it is 1000-3000 mJ / cm < ² >. In addition, in this application, tact time is time to B-stage formation, means the exposure time in the case of light irradiation, and means the time which heat is added in the case of heat drying. In the case of thermal drying, the time during which heat is applied means, for example, the total time of those steps when going through the steps of temperature rise, constant temperature (maintenance), and temperature drop, and in the case of only constant temperature, It means process time. If the exposure amount is less than 1 mJ / cm ² , the photocurable component may not be sufficiently cured, and in that case, it tends to be outgas when performing thermosetting of the thermosetting compound after the third step. . Further, if the photopolymerizable compound cannot be cured sufficiently, the tackiness becomes too large, and problems are likely to occur during assembly.

  The light irradiation is preferably performed at room temperature (approximately 10 to 25 ° C.) until the curing of the photocuring component is completed (approximately 1 second to 5 minutes). Furthermore, light irradiation can be performed in an atmosphere such as vacuum, nitrogen, air, etc., but in order to reduce oxygen inhibition, a film such as a PET film or polypropylene film that has been subjected to a release treatment is applied on the coating film. It is preferable to be carried out in a laminated state or in a nitrogen atmosphere, and more preferably in a nitrogen atmosphere with an oxygen concentration of 1 ppm or less. When light irradiation is performed in the air, when oxygen in the air inhibits the photocuring reaction, the photocurable component cannot be sufficiently cured, and when the thermosetting component is thermally cured after the third step. It becomes easy to become outgas. In addition, tackiness may become too large, and problems may occur during assembly.

  In the present embodiment, exposure can be performed through a patterned mask as necessary.

  In the third step, for example, a semiconductor chip 50 is mounted on the light-irradiated coating film 32 of the semiconductor support member 10 by using a die bonding apparatus, and the semiconductor support member 10 on which the semiconductor chip 50 is mounted is shown in FIG. As shown in (c), for example, the heat block 51 can be used, for example, by heating and pressurizing at 1 to 200 N and 20 to 200 ° C. for about 0.01 to 90 seconds. Thereby, the thermosetting component in the coating film 32 is thermoset, the coating film 32 becomes a die bonding layer, and the semiconductor support member and the semiconductor chip are bonded (die-bonded). The heating temperature, pressure, pressure bonding time, and pressure bonding speed at the time of die bonding can be appropriately changed according to the B-stage conditions and the resin paste composition. From the viewpoint of pressure resistance of the semiconductor chip and the semiconductor support member, the third step is preferably performed at a pressure of 100 N or less. In addition, from the viewpoint of heat resistance of the chip and the support member, the third step is preferably performed at a temperature of 175 ° C. or less, and preferably from 60 to 170 ° C. from the viewpoint of reliability. From the viewpoint of tact time, the third step is preferably performed in a time of 10 seconds or less.

Examples of the semiconductor chip 50 include a Si chip, a Ge chip, and a chip using an organic compound, ZnSe, CdS, ZnO, GaAs, InP, GaN, SiC, SiGe, CuInSe ₂ or the like as a chip material.

  In the present embodiment, a pre-baking step of heating the semiconductor support member at 60 to 180 ° C. for 60 minutes or less can be provided before the third step. Thereby, when time passes after a 2nd process and a water | moisture content adheres to the coating-film surface of a resin paste, the water | moisture content can be removed before a 3rd process is performed. If the assembly process after the third process is performed in a state where a lot of moisture adheres to the coating film of the resin paste, it causes voids, cracks and the like. The longer the time between the pre-baking step and the third step, the more easily the resin paste absorbs moisture. Therefore, the pre-baking step is preferably performed immediately before the third step.

  The pre-baking step can be performed using an oven, and may be performed using a heat treatment furnace or a hot plate.

  The main purpose of the pre-baking process is to remove moisture on the surface of the resin paste, and it is not intended to advance the curing of the resin paste. Therefore, from the viewpoint of not proceeding the curing reaction of the resin paste, it is preferably performed at a low temperature of 60 to 150 ° C, and more preferably at a low temperature of 60 to 140 ° C. About time, 30 minutes or less are preferable and 15 minutes or less are more preferable. From the viewpoint of reducing outgas and preventing the warpage of the substrate, it is preferable to perform the pre-bake process at a lower temperature for a shorter time, and it is preferable to perform the process in a shorter time from the viewpoint of tact time.

  In the present embodiment, after-cure can be performed after the third step. The after-cure process can be performed using an oven, and may be performed using a heat treatment furnace or a hot plate. When performing an after cure using an oven, a curing reaction is gently started by incorporating a temperature rising step from room temperature into the program, and outgassing can be suppressed. From the viewpoint of preventing cracks in the die bonding layer, it is preferable to gradually heat and lower the temperature rising process from room temperature and the temperature lowering process to room temperature over 10 minutes. The after-cure temperature may be 80 ° C. to 200 ° C., but is preferably 175 ° C. or less from the viewpoint of outgas and substrate resistance. From the viewpoint of suppressing substrate warpage, it is desirable that the temperature is as low as possible. In the present embodiment, the die bonding resin paste to be used is blended with a curing accelerator having a low active region temperature, or by blending a low temperature reactive thermosetting compound with a low temperature (preferably 130 ° C. or less). After-cure (C-stage) is possible.

  If the chip is sufficiently fixed so that the semiconductor chip does not move during w-BGA wire bonding or μ-BGA wiring in the third step, after-cure can be omitted.

  After that, as shown in FIG. 2A, the electrode of the semiconductor chip 10 bonded by the die bonding layer 34 and the electrode 12 of the semiconductor support member are electrically connected by wire bonding 52. Thereafter, as shown in FIG. 2B, the semiconductor chip 50 is encapsulated with an encapsulating resin 60, and the solder balls 54 are mounted as necessary to obtain the semiconductor device (semiconductor package) 100. Can do.

  If there is no problem in the mounting assembly process, the die bonding layer may be C-staged when post-curing the sealing material. The problem in the mounting assembly process here is that the chip is vibrated at the time of wire bonding due to insufficient fixation between the semiconductor chip and the semiconductor support member, resulting in a problem of wire bonding. In addition, it means that the chip is peeled off by the flow of the sealing material on the side surface of the chip during resin sealing. In addition, the C-stage formation here is a process of making the state of further hardening (C-stage) from that of the resin paste immediately after the B-stage formation. Normally, the C-stage resin paste is a B-stage resin paste. Tg and elastic modulus are higher than those.

  According to the manufacturing method of the semiconductor device according to the present embodiment described above, it is possible to reduce the tact time when the semiconductor chip is bonded by applying the die bonding material on the semiconductor support member by the printing method, and the B stage. As a result, it is possible to sufficiently prevent an assembly failure caused by insufficient curing, excessive curing, or residual solvent, and to manufacture a highly reliable semiconductor device with high productivity. Further, the B-stage can be formed at a lower temperature than the conventional B-stage by heating, and the substrate warpage, outgas, and environmental load can be suppressed. Further, it is possible to sufficiently suppress defects such as voids caused by the solvent remaining in the process after the B stage.

  According to the present invention, in addition to the above-described effects, it is possible to solve the dog ear problem described below.

FIG. 4A is a view of the mask 20 disposed on the substrate on which screen printing is performed as viewed from above. In the screen printing, the resin paste is supplied onto the mask 20 disposed on the substrate, and the resin paste is embedded in the opening 22 by moving the squeegee in the direction of the arrow a (printing direction). Thereby, the coating film of the resin paste corresponding to the shape of the opening 22 is formed. With respect to the coating film formed by this screen printing, a cross section (cross section taken along line III-III in FIG. 4A) formed by cutting along the printing direction a was observed, and FIG. As shown in FIG. 2, the end of the coating film was raised (hereinafter referred to as “dog year”). 4 in (b), _{a 1} indicates the printing direction, b indicates the climax. And since the conventional resin paste contains a solvent, when it is B-staged by heat drying, the solvent is volatilized and the film thickness becomes thin as shown in FIG. However, the height of the dog ear may not change much before and after the B-stage conversion. In this case, the ratio of the dog ear height H2 to the film thickness H1 in the coating film before the B-stage conversion (H2 / H1). Rather, the ratio (H4 / H3) of the dog ear height H4 to the film thickness H3 (H4 / H3) (hereinafter also referred to as the dog ear ratio) in the coating film after the B-stage is significantly increased. Such an increase in dog ears can cause assembly problems such as voids during die attach and chip mounting with tilt.

  According to the die bonding resin paste of this embodiment and the method of manufacturing a semiconductor device using the same, it is possible to manufacture a semiconductor device having excellent reliability by preventing the occurrence of the above-described assembly defects. The present inventors believe that the increase in the dog-ear ratio caused by the solvent volatilization described above could be suppressed by allowing the coating film to be B-staged by light irradiation.

In the present embodiment, it is preferable to appropriately adjust the viscosity of the resin paste or the thixotropy index to maintain the printed shape of the coating film by screen printing. The ratio of the dog ear to the film thickness after coating is preferably reduced by adjusting the printing factor. Incidentally, dog and dog ear, the printed coating film, which occurs when viewed cross section along the screen-printing the printing direction a ₁ of, as shown in FIG. 4 (b), at the last printed portion This means a protrusion b shaped like an ear. If the height of the dog ear is large when mounting a semiconductor chip, the mounted chip may not be mounted in parallel to the substrate, voids may be involved, or the semiconductor package may not adhere sufficiently. Reliability decreases. In this embodiment, by using the die bonding resin paste according to the present invention, an increase in the dog-ear ratio after the B-stage can be sufficiently suppressed, and the above problem can be effectively prevented. Can do.

  The dog-ear ratio is shown in FIGS. 4B and 4C by measuring the shape of the coating film surface using a non-contact type shape measuring device (such as KS-1100 series manufactured by KEYENCE Inc.). Thus, it can be obtained by visualizing the shape of the cross section. FIG. 4B shows the cross-sectional shape of the coating film before the B-stage, and the dog-ear ratio is H2 / H1. Moreover, FIG.4 (c) shows the cross-sectional shape of the coating film after B-stage conversion, and a dog ear ratio is H4 / H3.

In the present embodiment, it is preferable to adjust the printing factor and the resin paste viscosity or the thixotropy index, using as an index the dog-ear ratio when the coating film formed under the following conditions is B-staged by light irradiation.
Substrate (resist): MCL-E-679F (AUS-308)
Mask: 120 micron thick metal mask Printing shape: 3 mm × 10 mm × 100 μm thick Printing machine: Minami Co., Ltd., MK-838SV

  Moreover, in this embodiment, it is preferable that the dog-ear ratio of the coating film formed under the above conditions and B-staged by light irradiation is 50% or less.

  Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples.

<Preparation of resin paste>
(Resin paste 1-5)
Resin pastes 1 to 5 were prepared by mixing the materials shown in Table 1 in proportions (parts by mass) shown in the same table.
In addition, each symbol in Table 1 means the following material.
FA-220M: Polyethylene glycol # 200 dimethacrylate (manufactured by Hitachi Chemical Co., Ltd., trade name, viscosity at 25 ° C .: 9 to 15 mPa · s).
BAH-1000Y: manufactured by Shin-Nakamura Chemical Co., Ltd., trade name, reaction product of Bis A type epoxy resin and 2-propenoic acid (mixed product of diepoxy, half epoxy acrylate, diacryl, custom-made product, viscosity at 40 ° C : 62500 mPa · s).
Epototo YDF-8170C: a product manufactured by Tohto Kasei Co., Ltd., trade name, a diglycidyl etherified modified product of phenol formaldehyde polycondensate with epichlorohydrin.
JER 1032-H60: Mitsubishi Chemical Corporation, trade name, α-2,3-epoxypropoxyphenyl-ω-hydropoly (n = 1-7) {2- (2,3-epoxypropoxy) benzylidene-2, 3-epoxypropoxyphenylene}.
IRGACURE-651: manufactured by BASF JAPAN, trade name, 2,2-dimethoxy-1,2-diphenylethane-1-one.
TPPK: Tokyo Chemical Industry Co., Ltd., trade name, tetraphenylphosphonium tetraphenylborate.
2P4MHZ-PW: manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name, 2-phenyl-4-methyl-5-hydroxymethylimidazole.
Park Mill D: NOF Corporation, trade name, peroxide.
CTBNX-1009SP: PTI JAPAN, trade name, butadiene-acrylonitrile copolymer.
Aerosil 50: manufactured by Nippon Aerosil Co., Ltd., trade name, SiO ₂ .
Aerosil 380: Nippon Aerosil Co., Ltd., trade name, SiO ₂ .
Carbitol acetate: Wako Pure Chemical Industries, Ltd., 2- (2-ethoxyethoxy) ethyl acetate.

  About the resin pastes 1-5 obtained above, the viscosity at 25 ° C., the nonvolatile content (NV) ratio, and the dog-ear ratio (%) before and after the B-stage were determined according to the following method. For resin pastes 1 and 5, the Young's elastic modulus (MPa) at 25 ° C. of the cured product was determined. The results are shown in Table 1.

[viscosity]
The viscosity of the resin paste was measured under the conditions of a diameter of 19.4 mm, 3 ° cone, 0.5 rpm, and 25 ° C. using an E-type viscometer (VISCONIC ELD) manufactured by Toki Sangyo Co., Ltd.

[NV rate]
The non-volatile content (NV) ratio of the resin paste was determined by the following procedure.
Resin pastes 1 and 3-5: Place approximately 1.5 g of resin paste on the inside of the bottom surface of a cylindrical metal petri dish (mass: W1 (g)) having a diameter of approximately 60 mm and a height of approximately 14 mm so that the film thickness is as uniform as possible. Thus, a measurement sample was obtained. Thereafter, the mass (W2 (g)) of the placed resin paste was accurately measured. Next, these measurement samples were irradiated with ultraviolet rays having an exposure amount of 1000 mJ / cm ^{2 in} a nitrogen atmosphere having an oxygen concentration of 1 pp or less using a high-pressure mercury lamp. Next, the measurement sample irradiated with ultraviolet rays was placed in an oven, heated from 40 ° C. to 140 ° C. over 30 minutes, maintained at that temperature for 30 minutes, and then lowered to 40 ° C. over 30 minutes. Thereafter, heating was performed in an oven at 200 ° C. for 2 hours. The mass (W3 (g)) of the whole measurement sample after heating was measured. Using these values, the NV ratio (%) was obtained from the following formula.
NV (%) = [{(W3) − (W1)} / (W2)] × 100

Resin paste 2: For measurement by placing about 1.5 g of resin paste on the inside of the bottom surface of a cylindrical metal petri dish (mass: W1 (g)) having a diameter of about 60 mm and a height of about 14 mm so that the film thickness is as uniform as possible. A sample was used. Thereafter, the mass (W2 (g)) of the placed resin paste was accurately measured. Next, the measurement sample was put in an oven, and the temperature was raised from 40 ° C. to 140 ° C. over 30 minutes, the temperature was maintained for 30 minutes, and then the temperature was lowered to 40 ° C. over 30 minutes. Thereafter, heating was performed in an oven at 200 ° C. for 2 hours. The mass (W3 (g)) of the whole measurement sample after heating was measured. Using these values, the NV ratio (%) was obtained from the above formula.

[Dog Year ratio]
About the coating film before B-stage formation formed on the following screen printing conditions, and the coating film B-staged on the following conditions, a non-contact type shape measuring apparatus (manufactured by KEYENCE, KS-1100) The shape of the coating film surface was measured using a series etc., and the dog-ear ratio was determined by visualizing the cross-sectional shape.
(Screen printing)
Substrate (resist): MCL-E-679F (AUS-308)
Mask: 120 micron thick metal mask Printing shape: 3 mm × 10 mm × 100 μm thick Printing machine: Minami Co., Ltd., MK-838SV
Squeegee speed: 30 mm / sec Squeegee offset: -0.1 mm
Plate separation speed: 2 mm / second Squeegee angle: 60 °
Clearance: 0mm (contact)

(B stage)
Resin pastes 1 and 3-5: Using an exposure machine (Mikasa Co., Ltd., aligner ML-210FM, illuminance of 13 mW / cm ² or more (in terms of 365 nm), light source: high-pressure mercury lamp), exposure condition of 1000 mJ / cm ² And irradiate with ultraviolet rays.
Resin paste 2: The temperature was raised from 40 ° C. to 140 ° C. in an oven for 30 minutes, the temperature was maintained for 30 minutes, and then the temperature was lowered to 40 ° C. over 30 minutes.

[Young elastic modulus]
Each resin paste is applied on a Teflon (registered trademark) sheet so as to have a film thickness of 100 μm to form a coating film. Under a temperature condition of 25 ° C., an exposure machine (Mikasa Co., Ltd., aligner ML-210FM, illuminance) Using 13 mW / cm ² or more (in terms of 365 nm), light source: high-pressure mercury lamp), ultraviolet rays were irradiated under conditions of an exposure amount of 1000 mJ / cm ² , and then nitrogen in an oven at 140 ° C. for 5 hours with an oxygen concentration of 1 pp or less Thermosetting was performed under the conditions under the atmosphere to obtain a cured product. About the obtained hardened | cured material, the Young's elastic modulus in 25 degreeC was measured on the following conditions using the following tester.
Tester: RSA-III, manufactured by TA instruments, Inc. Test mode: Tensile test temperature: -100 to 300 ° C
Temperature increase rate: 5 ° C./min Test frequency: 1.0 Hz
Temperature adjustment: LN2
Distance between chucks: about 20mm (initial)
DeltaL limit: 10 mm.

  Using the resin pastes 1 to 5 obtained above, semiconductor devices were manufactured under various assembly conditions, and substrate warpage, wettability, and outgas were evaluated according to the following methods.

(Assembly examples 1 to 3)
On an organic substrate (MCL-E-679F, manufactured by Hitachi Chemical Co., Ltd.) coated with a solder resist (trade name: AUS-308, manufactured by Taiyo Ink Manufacturing Co., Ltd.), a printing machine and a metal mask (mask shape) The resin paste 1 was screen-printed to form a coating film using two 10.0 mm × 3.0 mm × 120 μm openings). Next, with respect to the formed coating film, an exposure machine (Mikasa Co., Ltd., aligner ML-210FM, illuminance of 13 mW / cm ² or more (in terms of 365 nm), light source: high-pressure mercury lamp) is used, and the exposure dose is 100, 1000. Or, ultraviolet rays were irradiated under the condition of 5000 mJ / cm ² to form B-staged bonding layers.

  On a hot plate at 90 ° C., a glass chip (10.0 mm × 12.0 mm × 50 μm thickness) is pressure-bonded on the bonding layer for 1 second using a pressure bonding machine (CM-110) with a load of 50 N. A semiconductor device for evaluation was obtained.

[Warpage of substrate]
For the organic substrate having the B-staged bonding layer as described above, the shape of the coating film surface was measured using a non-contact type shape measuring device (manufactured by KEYENCE, KS-1100 series), and the cross section (coating film) The warpage was measured by visualizing the shape of the surface cut in the thickness direction.

[Evaluation of wettability]
About the semiconductor device for evaluation obtained above, the spread of the resin paste after pressure bonding of the glass chip was visually confirmed from the upper surface of the glass chip and evaluated according to the following criteria. The results are shown in Table 2.
a: The total area of bubbles and voids is 5% or more of the printed shape (insufficient wettability).
b: The area of the opening of the metal mask is less than ± 5% of the printed shape (appropriate wettability).
c: The wetted area after die attach is 105% or more of the wetted area before die attach (excessive wettability).

[Outgas]
About the bonding layer after making it B-stage, the weight reduction rate when heated at 180 degreeC was measured, and the thing of 95% or more was set to C, and the thing of less than 95% was set to C. The results are shown in Table 2. In addition, about the measurement of outgas, the bonding layer which used the B-stage for the coating film printed in the thickness of 10 cm x 10 cm x 100 micrometers was used from a viewpoint of accuracy.

(Assembly examples 4-6)
On an organic substrate on which a solder resist (trade name: AUS-308, manufactured by Taiyo Ink Manufacturing Co., Ltd.) is applied, a printing machine and a metal mask (mask shape: 10.0 mm × 3.0 mm × 100 μm) are provided. 2 places), the resin paste 2 was screen-printed and the coating film was formed. Next, the formed coating film is heated in an oven from 40 ° C. to 135 ° C., 140 ° C. or 145 ° C. over 30 minutes, maintained at that temperature for 30 minutes, and then lowered to 40 ° C. over 30 minutes. A B-staged bonding layer was formed respectively.

  On a hot plate at 90 ° C., a glass chip (10.0 mm × 12.0 mm × 50 μm thickness) is pressure-bonded on the bonding layer for 1 second using a pressure bonding machine (CM-110) with a load of 50 N. A semiconductor device for evaluation was obtained.

  Note that the conditions of the B-stage temperature of 135 ° C. in the assembly example 4 and the B-stage temperature of 145 ° C. in the assembly example 6 are assumed to be a low temperature portion and a high temperature portion when the temperature distribution in the oven varies. It is a thing.

  The substrate warpage, wettability, and outgas were evaluated in the same manner as in Assembling Examples 1 to 3. The results are shown in Table 2.

  Moreover, the semiconductor device was manufactured on the various assembly conditions using the resin pastes 1-5 obtained above, and die shear strength and outgas were evaluated according to the following method.

(Assembly examples 7-9)
Resin paste 1 using a printing machine and a metal mask (mask shape: 3 mm × 10 mm × 100 μm thickness) on an organic substrate coated with a solder resist (trade name: AUS-308, manufactured by Taiyo Ink Manufacturing Co., Ltd.) 3 or 4 was screen-printed to form a coating film.

Next, with respect to each of the formed coating films, an exposure machine (Mikasa Co., Ltd., aligner ML-210FM, illuminance of 13 mW / cm ² or more (365 nm conversion), light source: high-pressure mercury lamp) is used, and the exposure amount is 1000 mJ. Under the condition of / cm ² , ultraviolet rays were irradiated to form B-staged bonding layers, respectively.

  A silicon chip (5 mm × 5 mm × 0.5 mm thickness) was bonded onto the bonding layer on a 90 ° C. hot plate using a pressure bonding machine (CM-110) for 1 second under a load of 50 N.

  Next, the temperature was raised from 40 ° C. to 130 ° C. in an oven for 30 minutes, the temperature was maintained for 60 minutes, and then the temperature was lowered to 40 ° C. over 30 minutes to perform after cure, thereby obtaining an evaluation semiconductor device.

[Die shear strength measurement]
About the semiconductor device for evaluation obtained above, shear strength (kgf / chip) at 180 ° C. was measured using an automatic adhesive strength tester (trade name: series-4000, manufactured by Daisy). The results are shown in Table 3.

[Outgas]
About the bonding layer after making it B-stage, the weight reduction rate when heated at 180 degreeC was measured, and the thing of 95% or more was set to C, and the thing of less than 95% was set to C. The results are shown in Table 3.

(Assembly example 10)
An evaluation semiconductor device was obtained in the same manner as in Assembly Example 7 except that the C-stage temperature 130 ° C. in Assembly Example 7 was changed to 175 ° C.

[Warpage of substrate]
About the obtained semiconductor device for evaluation, the warp of the substrate was measured by the following method. The results are shown in Table 4 together with the results of the semiconductor device for evaluation of assembly example 7.

  Using a non-contact type shape measuring apparatus (manufactured by KEYENCE, KS-1100 series), the shape of the substrate was measured, and the warpage was measured by visualizing the shape of the cross section of the substrate.

(Assembly example 11)
An evaluation semiconductor device was obtained in the same manner as in Assembly Example 7 except that the resin paste 1 in the assembly example 7 was changed to the resin paste 5. About the obtained semiconductor device for evaluation, the curvature of the substrate was measured by the above method. The results are shown in Table 4.

  The resin paste for die bonding according to the present invention can be easily supplied and applied by screen printing on a substrate to which a semiconductor chip is to be attached, and is attached to a semiconductor chip at a relatively low temperature by forming a B stage by light irradiation. Can do. Furthermore, the dog-ear ratio can be made smaller than before, and outgassing can be suppressed. Moreover, the resin paste for die bonding according to the present invention can sufficiently have low stress, adhesiveness, and heat resistance while exhibiting the above effects. The resin paste for die bonding according to the present invention can be suitably used for an insulating support substrate such as an organic substrate and a copper lead frame, and can also be suitably used for a 42 alloy lead frame. By implementing the semiconductor device manufacturing method according to the present invention using the die bonding resin paste according to the present invention, the package reliability can be improved.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor support member, 12 ... Electrode, 20 ... Mask, 30 ... Coating film of resin paste, 32 ... Coating film irradiated with light, 34 ... Die bonding layer, 40 ... Squeegee, 50 ... Semiconductor chip, 52 ... Wire bonding 54 ... Solder balls, 100 ... Semiconductor device.

Claims (9)

  (A) a photopolymerizable compound having a viscosity at 25 ° C. of 100 Pa · s or less, (B) a thermosetting compound, and (C) a thermoplastic elastomer, and a solvent content of 5% by mass or less, Resin paste for die bonding.   The resin paste for die bonding according to claim 1, further comprising (D) a photopolymerization initiator.   (E) The resin paste for die bonding according to claim 1 or 2, further comprising a curing accelerator.   (F) The resin paste for die bonding as described in any one of Claims 1-3 which further contains a filler.   (G) The resin paste for die bonding as described in any one of Claims 1-4 which further contains the 1 or more types of additive selected from the group which consists of a defoamer, a foam breaker, and a foam suppressor.   The resin paste for die bonding as described in any one of Claims 1-5 whose viscosity in 25 degreeC is 5-1000 Pa.s. When the resin paste for die bonding is formed into a coating film having a thickness of 100 μm, and the coating film is irradiated with light having a wavelength of 365 nm at an exposure amount of 1000 mJ / cm ² at 25 ° C. in a nitrogen atmosphere having an oxygen concentration of 1 ppm or less, When the melt viscosity at 100 ° C. of the light-irradiated coating film is 100 to 100,000 Pa · s and the light-irradiated coating film is further heated at 140 ° C. for 5 hours in a nitrogen atmosphere with an oxygen concentration of 1 ppm or less, heating is performed. The resin paste for die bonding according to claim 1 or 2, wherein a Young's modulus at 25 ° C of the coated film is 1 to 3000 MPa. A first step of providing a coating film of the resin paste by applying the resin paste for die bonding according to any one of claims 1 to 7 by screen printing on a semiconductor support member for mounting a semiconductor chip; ,
A second step of irradiating the coating film with light;
And a third step of crimping the semiconductor support member and the semiconductor chip across the coating film irradiated with light. A semiconductor device obtained by the method for manufacturing a semiconductor device according to claim 8.

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