JP2012099582A - Liquid treatment apparatus, liquid treatment method and recording medium in which computer program for performing liquid treatment method is recorded - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid treatment apparatus which prevents the deposition of a product material produced from an acidic treatment liquid and an alkaline treatment liquid to enhance exhaust efficiency.SOLUTION: A liquid treatment apparatus 10 comprises: a liquid treatment part 40 for supplying the acidic treatment liquid or the alkaline treatment liquid to a workpiece W; a main exhaust duct 64 connected to the liquid treatment part 40; a plurality of individual exhaust ducts 61, 62 and 63 which are connected to the main exhaust duct 64 from a downstream side in an exhaust direction in this order respectively and exhaust an atmosphere in the liquid treatment part 40; and a plurality of exhaust on-off valves 71, 72 and 73 which are provided between the main exhaust duct 64 and each of the plurality of individual exhaust ducts 61, 62 and 63. The main exhaust duct 64 has a branch part 64b and a washing fluid jetting part 80 for jetting a washing fluid, which is provided between the liquid treatment part 40 and the branch part 64b of the main exhaust duct 64.

Description

  The present invention relates to a liquid processing apparatus, a liquid processing method, and a recording medium on which a computer program for executing the liquid processing method is recorded.

  For example, in a semiconductor device manufacturing process, a liquid processing apparatus that cleans a wafer by sequentially discharging a plurality of processing liquids onto the wafer while rotating the wafer while holding the wafer (object to be processed) by a spin chuck is used. It has been.

  When cleaning a wafer using such a liquid processing apparatus, first, while rotating the wafer held by the spin chuck, an acidic processing liquid (for example, an SPM liquid (a mixed solution of sulfuric acid and hydrogen peroxide solution)) ) Is discharged onto the wafer, and processing with the SPM liquid is performed. Subsequently, a rinsing process liquid (for example, pure water) is discharged onto the wafer to rinse the wafer. Next, an alkaline processing liquid having an ammonia component (for example, ammonia overwater (SC1 liquid)) is discharged onto the wafer and processed with the SC1 liquid, and then pure water is discharged onto the wafer to rinse the wafer. Is done. Next, an organic processing liquid (for example, isopropyl alcohol (IPA)) is discharged onto the wafer, the wafer is processed, and the wafer is dried.

  While the wafer is being processed as described above, the processing liquid discharged onto the rotating wafer scatters around the wafer in the form of a mist and passes through the exhaust duct together with the gas around the wafer. The liquid is collected or drained for each processing liquid. In this case, since the mist of the acidic SPM liquid and the mist of the alkaline SC1 liquid flow in the exhaust duct, there is a problem that the SPM liquid reacts with the SC1 liquid and the product adheres to the exhaust duct. .

  By the way, an exhaust system is disclosed in which a water spray nozzle is provided in the exhaust duct to remove chemical crystals clogged in the exhaust duct (see, for example, Patent Document 1). Here, there is described an exhaust system in which chemical vapor flowing in an exhaust duct is washed by a cooling coil to wash attached crystals.

JP-A-8-107097

  However, as described above, in a liquid processing apparatus that processes a wafer using a plurality of processing liquids, a mist-like acidic SPM liquid and a mist-like alkaline SC1 liquid flow through the exhaust duct. For this reason, the product produced | generated by SPM liquid and SC1 liquid adheres in an exhaust duct, There exists a problem that the flow-path cross-sectional area of an exhaust duct reduces, and exhaust efficiency falls. In addition, such a product also adheres to an open / close valve such as a damper, and there is a problem that the open / close operation of the open / close valve is hindered.

  The present invention has been made in consideration of such points, and is a liquid treatment that can prevent the products produced by the acidic treatment liquid and the alkaline treatment liquid from adhering and can improve the exhaust efficiency. An object is to provide an apparatus, a liquid processing method, and a recording medium on which a computer program for executing the liquid processing method is recorded.

  The present invention provides a liquid processing unit having an acidic processing liquid supply unit for supplying an acidic processing liquid to an object to be processed, an alkaline processing liquid supply unit for supplying an alkaline processing liquid, and a main unit connected to the liquid processing unit. An exhaust duct, a plurality of individual exhaust ducts that are sequentially connected to the main exhaust duct from the downstream side in the exhaust direction, and discharge the atmosphere in the liquid processing unit, the main exhaust duct, and each of the plurality of individual exhaust ducts A plurality of exhaust on-off valves provided between the two exhaust on-off valves, wherein one of the plurality of exhaust on-off valves is opened when an acidic treatment liquid is supplied to the object to be treated. One exhaust on-off valve includes the plurality of exhaust on-off valves that are opened when an alkaline processing liquid is supplied to the object to be processed, and the main exhaust duct includes the plurality of individual exhaust valves. On the most upstream side of the duct in the exhaust direction A cleaning fluid jetting section for jetting cleaning fluid is provided between the liquid processing section and the branching section of the main exhaust duct, and the cleaning fluid jetting section is provided between the liquid processing section and the branching section of the main exhaust duct. Is characterized in that the cleaning fluid is ejected in a state where the exhaust on-off valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction among the plurality of individual exhaust ducts is opened and the other exhaust on-off valves are closed. A liquid processing apparatus is provided.

  In the liquid processing apparatus described above, a main exhaust opening / closing valve is provided between the liquid processing section and the branching section of the main exhaust duct, and the cleaning fluid ejection section is connected to the liquid processing section and the main exhaust opening / closing. A first cleaning fluid nozzle provided between the valve and a second cleaning fluid nozzle provided between the main exhaust on-off valve and the branch portion of the main exhaust duct, The cleaning fluid nozzle and the second cleaning fluid nozzle eject the cleaning fluid in a state where the exhaust opening / closing valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction is opened and the other exhaust opening / closing valve is closed. It is preferable to do.

  Moreover, in the liquid processing apparatus described above, it is preferable that the cleaning fluid ejecting section ejects a mist-like cleaning liquid as the cleaning fluid.

  In the liquid processing apparatus described above, it is preferable that a gas-liquid separation unit that separates liquid and gas is provided in the individual exhaust duct located on the most downstream side in the exhaust direction.

  In the liquid processing apparatus described above, the liquid processing apparatus further includes a transport mechanism that loads and unloads the object to be processed, and the cleaning fluid ejection section loads the object to be processed by the transport mechanism in the liquid processing part. It is preferable that the cleaning fluid is jetted out.

  The present invention provides a liquid processing unit having an acidic processing liquid supply unit for supplying an acidic processing liquid to an object to be processed, an alkaline processing liquid supply unit for supplying an alkaline processing liquid, and a main unit connected to the liquid processing unit. An exhaust duct, a plurality of individual exhaust ducts that are sequentially connected to the main exhaust duct from the downstream side in the exhaust direction, and discharge the atmosphere in the liquid processing unit, the main exhaust duct, and each of the plurality of individual exhaust ducts A plurality of exhaust on-off valves provided between the two exhaust on-off valves, wherein one of the plurality of exhaust on-off valves is opened when an acidic treatment liquid is supplied to the object to be treated. One exhaust on-off valve includes the plurality of exhaust on-off valves that are opened when an alkaline processing liquid is supplied to the object to be processed, and the main exhaust duct includes the plurality of individual exhaust valves. On the most upstream side of the duct in the exhaust direction A liquid processing apparatus having a branching part that branches to an individual exhaust duct to be installed, and provided with a cleaning fluid ejection part for ejecting a cleaning fluid between the liquid processing part and the branching part of the main exhaust duct In the liquid processing method for processing the object to be processed, the step of supplying the acid processing liquid from the acidic processing liquid supply unit to the object to be processed, and the step of supplying the alkaline processing liquid to the object from the alkaline processing liquid supply unit. Supplying a cleaning fluid from the cleaning fluid ejecting section by opening an exhaust opening / closing valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction among the plurality of individual exhaust ducts and closing other exhaust opening / closing valves And a step of ejecting the liquid.

  In the liquid processing method described above, a main exhaust on-off valve is provided between the liquid processing unit and the branch portion of the main exhaust duct, and the cleaning fluid ejection unit is connected to the liquid processing unit and the main exhaust opening / closing. A first cleaning fluid nozzle provided between the valve and a second cleaning fluid nozzle provided between the main exhaust on-off valve and the branch portion of the main exhaust duct, and the cleaning fluid And opening the exhaust on / off valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction and closing the other exhaust on / off valve, and the first cleaning fluid nozzle and the second cleaning fluid It is preferred that cleaning fluid be ejected from the nozzle.

  In the liquid treatment method described above, it is preferable that in the step of ejecting the cleaning fluid, a mist-like cleaning liquid is ejected as the cleaning fluid.

  Further, in the liquid treatment method described above, the individual exhaust duct located on the most downstream side in the exhaust direction is provided with a gas-liquid separation unit that separates liquid and gas, and the cleaning jetted from the cleaning fluid jetting unit The fluid is preferably separated into a liquid and a gas in the gas-liquid separation unit.

  In the liquid processing method described above, it is preferable that a step of ejecting the cleaning fluid is performed when the object to be processed is carried in and out in the liquid processing unit.

  The present invention provides a liquid processing unit having an acidic processing liquid supply unit for supplying an acidic processing liquid to an object to be processed, an alkaline processing liquid supply unit for supplying an alkaline processing liquid, and a main unit connected to the liquid processing unit. An exhaust duct, a plurality of individual exhaust ducts that are sequentially connected to the main exhaust duct from the downstream side in the exhaust direction, and discharge the atmosphere in the liquid processing unit, the main exhaust duct, and each of the plurality of individual exhaust ducts A plurality of exhaust on-off valves provided between the two exhaust on-off valves, wherein one of the plurality of exhaust on-off valves is opened when an acidic treatment liquid is supplied to the object to be treated. One exhaust on-off valve includes the plurality of exhaust on-off valves that are opened when an alkaline processing liquid is supplied to the object to be processed, and the main exhaust duct includes the plurality of individual exhaust valves. On the most upstream side of the duct in the exhaust direction A liquid processing apparatus having a branching part that branches to an individual exhaust duct to be installed, and provided with a cleaning fluid ejection part for ejecting a cleaning fluid between the liquid processing part and the branching part of the main exhaust duct A recording medium on which a computer program for executing a liquid processing method for processing the object to be processed is recorded, wherein the liquid processing method applies an acidic processing liquid to the target object from the acidic processing liquid supply unit. A step of supplying, a step of supplying an alkaline processing liquid to the object to be processed from the alkaline processing liquid supply unit, and an exhaust opening / closing corresponding to an individual exhaust duct located on the most downstream side in the exhaust direction among the plurality of individual exhaust ducts And a step of opening the valve and closing the other exhaust on-off valve, and ejecting the cleaning fluid from the cleaning fluid ejection section.

  According to the present invention, the branch of the main exhaust duct is opened while the exhaust on / off valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction among the plurality of individual exhaust ducts is opened and the other exhaust on / off valves are closed. The cleaning fluid is ejected from the cleaning fluid ejection section on the liquid processing section side of the section. As a result, the jetted cleaning fluid is discharged to the individual exhaust duct on the most downstream side in the exhaust direction through the main exhaust duct. For this reason, the cleaning fluid can be distributed to the main exhaust duct, the individual exhaust duct on the most downstream side in the exhaust direction, and each exhaust on-off valve, and these portions are generated by the acidic treatment liquid and the alkaline treatment liquid. An object can be prevented from adhering. As a result, it is possible to prevent the flow passage cross-sectional area in the main exhaust duct from decreasing, to prevent malfunction of each exhaust on-off valve, and to improve the exhaust efficiency of the liquid processing section.

FIG. 1 is a plan sectional view showing an example of the configuration of a liquid processing apparatus in an embodiment of the present invention. FIG. 2 is a schematic plan view showing a configuration of a liquid processing unit in the liquid processing apparatus according to the embodiment of the present invention. FIG. 3 is a schematic diagram showing a configuration of an exhaust mechanism in the liquid processing apparatus according to the embodiment of the present invention. FIG. 4 is a diagram showing a flowchart of the liquid processing method in the embodiment of the present invention.

  Hereinafter, a liquid processing apparatus, a liquid processing method, and a recording medium on which a computer program for executing the liquid processing method is recorded will be described with reference to the drawings.

  First, the overall configuration of the liquid processing apparatus 10 will be described with reference to FIG.

  As shown in FIG. 1, the liquid processing apparatus 10 is mounted with a wafer carrier C that accommodates a plurality of objects to be processed (for example, semiconductor wafers, hereinafter simply referred to as wafers W) in a horizontal state. A loading / unloading station 20 that performs unloading and a processing station 30 that is provided adjacent to the loading / unloading station 20 and processes the wafer W are provided.

  The loading / unloading station 20 includes a carrier mounting unit 21 for mounting the wafer carrier C, a transfer unit 22 for transferring the wafer W, and a delivery unit 23 for transferring the wafer W to the processing station 30. Among these, the transfer unit 22 is provided with a carrier-side transfer mechanism 24 that transfers the wafer W between the carrier mounting unit 21 and the delivery unit 23. The delivery unit 23 is provided with a delivery shelf 25 on which the wafer W is placed. The wafer W is delivered to the processing station 30 by placing the wafer W on the delivery shelf 25.

  The processing station 30 transports the wafers W between the plurality of liquid processing units 40 that process the wafers W, the receiving shelf 25 and the liquid processing units 40, and carries out the wafers W in and out of the liquid processing units 40. And a part-side transport mechanism (transport mechanism) 31. The plurality of liquid processing units 40 are arranged in two parallel rows, and the liquid processing unit side transport mechanism 31 is arranged between the rows of the liquid processing units 40. In this way, the wafer W is processed in each liquid processing unit 40. In addition, the liquid processing unit side transfer mechanism 31 has two holding arms 31 a each capable of holding the wafer W. The two holding arms 31a are arranged in the vertical direction, and only the upper holding arm 31a is shown in FIG.

  A supply source (not shown) for supplying the acid treatment liquid, the alkaline treatment liquid, the organic treatment liquid, and the rinse treatment liquid to the liquid treatment section 40 is provided below each liquid treatment section 40. Further, an exhaust mechanism 60 (see FIG. 3) that discharges the atmosphere in each liquid processing unit 40 is provided below each liquid processing unit 40.

  Next, the liquid processing unit 40 will be described with reference to FIG.

  As shown in FIG. 2, the liquid processing unit 40 includes a liquid processing chamber 41 in which a wafer W is carried in and out in a single-wafer manner, and is rotatable in a liquid processing chamber 41 provided in the liquid processing chamber 41. Rotating plate 42. A rotation motor 44 is connected to the rotation plate 42 via a rotation drive shaft 43, and the wafer W is held by a holding member 42 a at the peripheral edge of the rotation plate 42, and the rotation motor 44 is driven. It is designed to rotate in a horizontal plane.

  The liquid processing unit 40 includes an acid nozzle (acid processing liquid supply unit) 45 for discharging (supplying) the SPM liquid (acid processing liquid) to the wafer W held on the rotating plate 42, and an SC1 liquid (alkaline processing liquid). And an alkali nozzle (alkaline treatment liquid supply unit) 46 for discharging the liquid. Among these, the acid nozzle 45 is connected to a supply source (not shown) of the SPM liquid, and the alkali nozzle 46 is connected to a supply source (not shown) of the SC1 liquid. Further, the liquid processing unit 40 has a rinse nozzle (rinsing liquid supply unit) 47 for discharging pure water (rinsing process liquid), and a pure water supply source (not shown) is supplied to the rinse nozzle 47. It is connected. Further, although not shown, the liquid processing unit 40 is provided with an organic nozzle (organic processing liquid supply unit) that discharges an IPA liquid (organic processing liquid), and the organic nozzle has a supply source of the IPA liquid. It is connected.

As shown in FIG. 2, the rotation drive shaft 43 may be provided with a supply pipe 48 that can supply pure water and N ₂ gas to the back surface of the wafer W held on the rotation plate 42. In this case, the back surface of the wafer W can be cleaned.

  Around the rotating plate 42, a processing liquid discharged and scattered on the wafer W and a guide cup 50 for guiding those mists are provided. The guide cup 50 is connected to a lift drive unit 49 such as a cylinder, and the guide cup 50 can be lifted and lowered with respect to the wafer W held on the rotating plate 42. The guide cup 50 has a three-stage configuration, and when the wafer W is processed with the SPM liquid, the lower cup portion 51 that guides the SPM liquid scattered from the wafer W and the wafer W is processed with the SC1 liquid. When the wafer W is treated with the IPA liquid, the upper cup part 53 that guides the IPA liquid scattered from the wafer W is provided. . A lower drainage pipe 54 is connected to the lower cup part 51, and the SPM liquid in the lower cup part 51 is collected through the lower drainage pipe 54 by a pump (not shown). Similarly, a middle drainage pipe 55 and an upper drainage pipe 56 are connected to the middle cup part 52 and the upper cup part 53, respectively, so that each processing liquid is drained from the respective drainage pipes 55 and 56. Yes. A lower drain pipe 57 is provided below the rotating plate 42 for draining the processing liquid that has circulated below the rotating plate 42.

  The liquid processing unit 40 is connected to an exhaust mechanism 60 that discharges the atmosphere in the liquid processing unit 40. The exhaust mechanism 60 will be described in detail below with reference to FIG.

  As shown in FIG. 3, the exhaust mechanism 60 is connected to the main exhaust duct 64 connected to the liquid processing unit 40 and the main exhaust duct 64 in order from the downstream side in the exhaust direction (indicated by the arrow in FIG. 3). And a plurality of individual exhaust ducts (acid exhaust duct 61, alkali exhaust duct 62, and organic exhaust duct 63). Of these, the acid exhaust duct 61 mainly discharges the atmosphere during the acid treatment in the liquid treatment unit 40 (or the liquid treatment chamber 41), and the alkali exhaust duct 62 removes the atmosphere during the alkali treatment in the liquid treatment unit 40. It comes to discharge. The organic exhaust duct 63 discharges the atmosphere in the liquid processing unit 40 during the drying process. Note that an alkali exhaust duct 62 is disposed above the acid exhaust duct 61, and an organic exhaust duct 63 is disposed above the alkali exhaust duct 62. That is, in the present embodiment shown in FIG. 3, the acid exhaust duct 61 is located on the most downstream side in the exhaust direction, and the organic exhaust duct 63 is located on the most upstream side in the exhaust direction.

  The main exhaust duct 64 has a first branch portion 64 a that branches to the alkali exhaust duct 62 and a second branch portion 64 b that branches to the organic exhaust duct 63. That is, in the second branch part 64b, the exhaust flow path in the main exhaust duct 64 is branched into a flow path to the first branch part 64a and a flow path to the organic exhaust duct 63, and the first branch part 64a. , The flow path to the acid exhaust duct 61 and the flow path to the alkaline exhaust duct 62 are branched.

  Between the main exhaust duct 64 and each exhaust duct 61, 62, 63, a plurality of exhaust on-off valves (dampers) 71, 72, 73 are provided. That is, between the main exhaust duct 64 and the acid exhaust duct 61, there is provided an acid damper 71 that is opened when the SPM liquid is supplied to the rotating wafer W (during acid treatment). Similarly, an alkali damper 72 is provided between the main exhaust duct 64 and the alkali exhaust duct 62 and is opened when the SC1 liquid is supplied to the rotating wafer W (during alkaline processing). Between the main exhaust duct 64 and the organic exhaust duct 63, an organic damper 73 that is opened when the IPA liquid is supplied to the rotating wafer W (during the drying process) is provided. The acid damper 71, the alkali damper 72, and the organic damper 73 are connected to a control unit 90, which will be described later, and each damper 71, 72, 73 is opened and closed based on a control signal from the control unit 90, respectively. It is supposed to be.

  A main exhaust damper (main exhaust on-off valve) 77 is provided between the liquid processing unit 40 and the second branch portion 64 b of the main exhaust duct 64. The main exhaust damper 77 is set to be open while the wafer W is being processed, regardless of the type of processing liquid used for processing. A main exhaust connection pipe 78 is interposed between the liquid processing unit 40 and the main exhaust damper 77. The main exhaust damper 77 is connected to a control unit 90 to be described later, and the main exhaust damper 77 is opened and closed based on a control signal from the control unit 90.

  As shown in FIG. 3, the acid exhaust duct 61 is connected to an acid exhaust common duct 74 that mainly discharges the atmosphere during acid treatment in each liquid treatment unit 40 of the liquid treatment apparatus 10. Is discharged to the acid exhaust common duct 74 through the acid exhaust duct 61. Similarly, the alkali exhaust duct 62 is connected to an alkali exhaust common duct 75 that discharges the atmosphere at the time of alkali treatment in each liquid treatment unit 40, and the atmosphere in the liquid treatment unit 40 passes through the alkali exhaust duct 62 and becomes alkaline. It is discharged to the exhaust common duct 75. The organic exhaust duct 63 is connected to an organic exhaust common duct 76 that discharges the atmosphere during the drying process in each liquid processing unit 40, and the atmosphere in the liquid processing unit 40 passes through the organic exhaust duct 63 to exhaust the organic exhaust. It is discharged to the common duct 76.

  The acid exhaust common duct 74, the alkali exhaust common duct 75, and the organic exhaust common duct 76 extend in the direction of the row of the liquid processing units 40 below the liquid processing unit 40 of the processing station 30 illustrated in FIG. The atmosphere in each liquid processing unit 40 is discharged. In addition, the acid exhaust common duct 74, the alkali exhaust common duct 75, and the organic exhaust common duct 76 are disposed on the back side of the acid exhaust duct 61, the alkali exhaust duct 62, and the organic exhaust duct 63 in FIG.

  The acid exhaust common duct 74, the alkali exhaust common duct 75, and the organic exhaust common duct 76 are mist traps (gas-liquid separation units) 65, 66, 67 that separate liquid and gas from exhaust gas containing mist of the processing liquid. Are provided. The SPM liquid separated in the mist trap 65 is collected through the drain 68, and the treatment liquid separated in the mist traps 66 and 67 is drained through the drains 69 and 70, respectively.

  Further, the acid exhaust common duct 74, the alkali exhaust common duct 75, and the organic exhaust common duct 76 are provided with suction drive portions 79a, 79b, and 79c, respectively, and the acid exhaust common duct 74, the alkali exhaust common duct 75, The inside of the organic exhaust common duct 76 is sucked, and the atmosphere in each liquid processing unit 40 is discharged.

A cleaning fluid ejection unit 80 that ejects the cleaning fluid is provided between the liquid processing unit 40 and the second branch portion 64 b of the main exhaust duct 64. That is, as shown in FIG. 3, the cleaning fluid ejection unit 80 includes a first cleaning fluid nozzle 81 provided between the liquid processing unit 40 and the main exhaust damper 77 (that is, the main exhaust connection pipe 78), And a second cleaning fluid nozzle 82 provided between the exhaust damper 77 and the second branch part 64 b of the main exhaust duct 64. The first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 mix a gas with the cleaning liquid for cleaning the inside of the main exhaust duct 64, and use it as a cleaning fluid as a mist-like cleaning liquid (cleaning droplets having a minute particle size). Are each configured as a two-fluid nozzle. The first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 are supplied with pure water from a source of pure water (not shown) and N as an inert gas from a source of inert gas (not shown). _Two gases are supplied, and pure water and N ₂ gas are mixed and ejected. A control unit 90 described later is connected to the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82, and each of the cleaning fluid nozzles 81 and 82 is based on a control signal from the control unit 90, respectively. The cleaning fluid is jetted out.

  The liquid processing apparatus 10 includes a control unit 90 that controls the first cleaning fluid nozzle 81, the second cleaning fluid nozzle 82, the acid damper 71, the alkali damper 72, the organic damper 73, and the main exhaust damper 77. The control unit 90 opens the acid damper 71 and the main exhaust damper 77 and ejects the cleaning fluid from the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 in a state where the alkali damper 72 and the organic damper 73 are closed. Thus, each damper 71, 72, 73, 77 and each cleaning fluid nozzle 81, 82 are controlled. Further, the controller 90 causes the cleaning fluid to be ejected from the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 when the liquid processing unit 40 carries the wafer W in and out by the liquid processing unit side transport mechanism 31. The cleaning fluid nozzles 81 and 82 are controlled.

  By the way, as shown in FIG. 3, in order to manage the liquid processing apparatus 10 by the process manager or the like, the control unit 90 visualizes a keyboard for performing a command input operation or the like, an operating status of the liquid processing apparatus 10, etc. An input / output device 91 comprising a display or the like for display is connected. Further, the control unit 90 can access a recording medium 92 on which a program and the like for realizing processing executed by the liquid processing apparatus 10 are recorded. The recording medium 92 can be configured from a known recording medium such as a memory such as a ROM and a RAM, a disk-shaped recording medium such as a hard disk, a CD-ROM, a DVD-ROM, and a flexible disk. In this way, the processing of the wafer W is performed in the liquid processing apparatus 10 by the control unit 90 executing a program or the like recorded in advance on the recording medium 92.

  Next, the operation of the present embodiment having such a configuration, that is, the liquid processing method according to the present embodiment will be described. The operation of each component for executing the liquid processing method described below is controlled by a control signal from the control unit 90 based on a program recorded in advance on the recording medium 92.

  First, as shown in FIG. 4, the wafer W is loaded into the liquid processing unit 40 (step S1). In this case, first, as shown in FIG. 1, the wafer carrier C in which the wafer W before processing is accommodated is placed on the carrier placing portion 21 of the loading / unloading station 20, and this wafer is transported by the carrier-side transport mechanism 24. The wafer W is transferred from the carrier C to the delivery unit 23 and placed on the delivery shelf 25. Subsequently, the wafer W is transferred from the delivery unit 23 to the liquid processing unit 40 by the liquid processing unit side transfer mechanism 31 of the processing station 30 and is carried into the liquid processing unit 40. The loaded wafer W is held by the holding member 42a on the rotating plate 42 of the liquid processing unit 40 shown in FIG. Although the suction drive units 79a, 79b, and 79c are driven in advance, the acid damper 71 and the main exhaust damper 77 of the exhaust mechanism 60 shown in FIG. 3 are opened while the wafer W is loaded into the liquid processing unit 40. The alkali damper 72 and the organic damper 73 are closed. In this way, the atmosphere in the liquid processing unit 40 is discharged to the acid exhaust common duct 74 through the main exhaust duct 64 and the acid exhaust duct 61.

  Subsequently, the rotary plate 44 holding the wafer W is rotationally driven by the rotary motor 44 (step S2).

  Next, the wafer W is subjected to chemical treatment (acid treatment) using the SPM solution (step S3). In this case, the SPM liquid is supplied to the acid nozzle 45 from an unillustrated SPM liquid supply source, and the SPM liquid is discharged from the acid nozzle 45 onto the surface of the rotating wafer W, so that the wafer W is treated with the SPM liquid. Is done. During this time, the lower cup portion 51 is positioned at a position facing the wafer W, and the SPM liquid discharged onto the surface of the wafer W receives centrifugal force and scatters to the lower cup portion 51. The SPM liquid scattered in the lower cup portion 51 is collected through the lower drain pipe 54. During this time, since the acid damper 71 is open, the atmosphere in the liquid processing unit 40 is discharged to the acid exhaust common duct 74 through the main exhaust duct 64 and the acid exhaust duct 61. After a predetermined time has elapsed, the discharge of the SPM liquid is stopped, and the SPM liquid on the wafer W is shaken off by receiving a centrifugal force.

  After the processing of the wafer W with the SPM liquid is completed, the wafer W is rinsed (step S4). In this case, pure water is supplied to the rinse nozzle 47 from a pure water supply source (not shown), pure water is discharged from the rinse nozzle 47 onto the surface of the rotating wafer W, and the wafer W is rinsed with pure water. Is done. While the wafer W is being rinsed, the lower cup portion 51 is opposed to the wafer W at a position facing the wafer W. Therefore, the pure water discharged onto the surface of the wafer W is the lower cup portion in the same manner as the SPM liquid. It is scattered to 51 and collected through the lower drainage pipe 54. During this time, since the acid damper 71 is open, the atmosphere in the liquid processing unit 40 is discharged to the acid exhaust common duct 74 through the main exhaust duct 64 and the acid exhaust duct 61.

  Next, the wafer W is processed with a chemical solution (alkaline treatment) using the SC1 solution (step S5). In this case, first, the guide cup 50 is lowered by the elevating drive unit 49, and the middle cup unit 52 is positioned at a position facing the wafer W. In addition, the acid damper 71 is closed and the alkali damper 72 is opened. Subsequently, the SC1 liquid is supplied from the SC1 liquid supply source (not shown) to the alkali nozzle 46, and the SC1 liquid is discharged from the alkali nozzle 46 onto the surface of the rotating wafer W. Is done. During this time, the SC1 liquid discharged onto the surface of the wafer W receives the centrifugal force of the wafer W and scatters to the middle cup portion 52. The SC1 liquid scattered in the middle cup portion 52 is drained through the middle drain pipe 55. Further, since the alkali damper 72 is open during this time, the atmosphere in the liquid processing unit 40 is discharged to the alkaline exhaust common duct 75 through the main exhaust duct 64 and the alkaline exhaust duct 62.

  After the processing of the wafer W with the SC1 liquid is completed, the wafer W is rinsed (step S6). In this case, pure water is supplied to the rinse nozzle 47 from a pure water supply source (not shown), pure water is discharged from the rinse nozzle 47 onto the surface of the rotating wafer W, and the wafer W is rinsed with pure water. Is done. While the wafer W is being rinsed, since the middle cup portion 52 faces the wafer W, the pure water discharged on the surface of the wafer W is scattered to the middle cup portion 52 as with the SC1 solution. Then, the liquid is drained through the middle drainage pipe 55. Further, since the alkali damper 72 is open during this time, the atmosphere in the liquid processing unit 40 is discharged to the alkaline exhaust common duct 75 through the main exhaust duct 64 and the alkaline exhaust duct 62.

  Next, the wafer W is dried using the IPA liquid (step S7). In this case, first, the upper cup portion 53 is positioned at a position facing the wafer W by the lift drive unit 49. In addition, the alkali damper 72 is closed and the organic damper 73 is opened. Subsequently, the IPA liquid is supplied from an IPA liquid supply source (not shown) to an organic nozzle (not shown), and the IPA liquid is discharged from the organic nozzle onto the surface of the rotating wafer W, so that the wafer W becomes an IPA liquid. Is dried. During this time, the IPA liquid discharged on the surface of the wafer W receives the centrifugal force of the wafer W and scatters to the upper cup portion 53. The IPA liquid scattered in the upper cup portion 53 is drained through the upper drain pipe 56. During this time, the organic damper 73 is open, so that the atmosphere in the liquid processing unit 40 is discharged to the organic exhaust common duct 76 through the main exhaust duct 64 and the organic exhaust duct 63.

  In this way, the processing of the wafer W is completed.

  Thereafter, the wafer W is unloaded from the liquid processing chamber 41 (step S8). In this case, first, as shown in FIG. 1, the processed wafer W is unloaded from the liquid processing unit 40 and transferred to the delivery unit 23 of the loading / unloading station 20 by the liquid processing unit side transfer mechanism 31 of the processing station 30. And placed on the delivery shelf 25. Subsequently, the carrier side transport mechanism 24 of the loading / unloading station 20 accommodates the wafer carrier C mounted on the carrier mounting unit 21 from the delivery shelf 25. Thereafter, the wafer carrier C in which the processed wafer W is accommodated is unloaded from the carrier placement unit 21. While the wafer W is being unloaded from the liquid processing unit 40, the acid damper 71 of the exhaust mechanism 60 is opened, and the alkali damper 72 and the organic damper 73 are closed. As a result, the atmosphere in the liquid processing unit 40 is discharged to the acid exhaust common duct 74 through the main exhaust duct 64 and the acid exhaust duct 61.

  By the way, while the wafer W is being carried into and out of the liquid processing chamber 41 in steps S8 and S1, the exhaust mechanism 60, that is, the main exhaust duct 64, the acid exhaust duct 61, the acid exhaust common duct 74, and Each damper 71, 72, 73, 77 is cleaned (step S9). In addition, when carrying in / out the wafer W, as described above, since the liquid processing unit side transfer mechanism 31 has the two holding arms 31a, the liquid processing unit side transfer mechanism accessed the liquid processing unit 40. After that, one holding arm 31a of the two holding arms 31a of the liquid processing unit side transport mechanism 31 unloads the processed wafer W from the liquid processing unit 40, and the other holding arm 31a receives the pre-processing. The wafer W can be carried into the liquid processing unit 40. As a result, the wafer W can be carried into and out of the liquid processing unit 40 quickly.

When cleaning the exhaust mechanism 60, first, pure water is supplied from a pure water supply source (not shown) to the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82, and an inert gas supply source (not shown) is provided. from N ₂ gas is supplied, purified water and N ₂ gas is mixed, is ejected from the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82. During this time, since the acid damper 71 is open, the cleaning fluid ejected from the first cleaning fluid nozzle 81 flows into the main exhaust duct 64 through the main exhaust damper 77. The cleaning fluid from the first cleaning fluid nozzle 81 passes through the main exhaust duct 64 and the acid damper 71 together with the cleaning fluid ejected from the second cleaning fluid nozzle 82 to the acid exhaust duct 61 and the acid exhaust common duct 74. It will flow sequentially. As a result, the SPM liquid and the SC1 liquid adhering to each of the ducts 64, 61, 74 and the dampers 71, 72, 73, 77, and the product produced by the reaction between the SPM liquid and the SC1 liquid are washed away. And each of the ducts 64, 61, 74 and the dampers 71, 72, 73, 77 can be cleaned.

  In addition, although the alkali damper 72 and the organic damper 73 are closed, they are not completely closed and a minute flow path is formed. For this reason, part of the cleaning fluid ejected from the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 also flows into the alkali exhaust duct 62 and the organic exhaust duct 63. For this reason, the alkali exhaust duct 62, the alkali exhaust common duct 75, the organic exhaust duct 63, and the organic exhaust common duct 76 can also be cleaned.

  The cleaning fluid that has flowed through the acid exhaust common duct 74, the alkali exhaust common duct 75, and the organic exhaust common duct 76 is separated into liquid and gas in the mist traps 65, 66, and 67, and the SPM separated in the mist trap 65. The liquid is collected through the drain 68, and the processing liquid separated in the mist traps 66 and 67 is drained through the drains 69 and 70, respectively.

  By repeating steps S1 to S9 as described above, the wafers W can be sequentially processed and the exhaust mechanism 60 can be cleaned.

  As described above, according to the present embodiment, the acid damper 71 is opened, and the alkali damper 72 and the organic damper 73 are closed. On the liquid treatment unit 40 side of the second branch portion 64b of the main exhaust duct 64, A cleaning fluid is ejected from one cleaning fluid nozzle 81. Thus, the jetted cleaning fluid is discharged through the main exhaust duct 64 to the acid exhaust duct 61 on the most downstream side in the exhaust direction. Therefore, the cleaning fluid can be distributed to the main exhaust duct 64, the acid exhaust duct 61, the acid exhaust common duct 74, the acid damper 71, the alkali damper 72, and the organic damper 73, and is generated by the SPM liquid and the SC1 liquid. It is possible to prevent the product to be adhered to the ducts 64, 61, 74 and the dampers 71, 72, 73. As a result, it is possible to prevent the flow passage cross-sectional area in each duct 64, 61, 74 from decreasing, and to prevent malfunction of each damper 71, 72, 73, and to improve the exhaust efficiency of the liquid processing unit 40. Can be improved. Further, as described above, since the alkali damper 72 and the organic damper 73 are not completely closed, the alkali exhaust duct 62, the alkali exhaust common duct 75, the organic exhaust duct 63, and the organic exhaust common duct 76 are also washed. be able to.

  Further, according to the present embodiment, the cleaning fluid is ejected from the second cleaning fluid nozzle 82 between the liquid processing unit 40 and the main exhaust damper 77, passes through the main exhaust damper 77 and the main exhaust duct 64, It is discharged to the acid exhaust duct 61. As a result, the cleaning fluid can be spread over the main exhaust connecting pipe 78 and the main exhaust damper 77, and the product generated by the SPM liquid and the SC1 liquid is transferred to the main exhaust connecting pipe 78 and the main exhaust damper 77. Adhesion can be prevented. For this reason, it is possible to prevent the flow passage cross-sectional area in the main exhaust connecting pipe 78 from being reduced, to prevent malfunction of the main exhaust damper 77, and to improve the exhaust efficiency of the liquid processing unit 40. .

  Further, according to the present embodiment, the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 are configured as two-fluid nozzles, so that the particles of the cleaning fluid ejected in a mist shape are made finer. Can do. Therefore, the cleaning fluid can be spread over a wider range from the cleaning fluid nozzles 81 and 82 to the downstream side in the exhaust direction, and the ducts 64, 61, 62, 63, 74, 75, 76, and the dampers 71, 72, 73, 77 can be more reliably cleaned.

  Furthermore, according to the present embodiment, when the wafer W is loaded and unloaded in the liquid processing unit 40, the cleaning fluid is ejected from the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82. This prevents the exhaust from the exhaust ducts 61, 62, 63 while the wafer W is being subjected to the chemical treatment, the rinse treatment, and the drying treatment, and delays the processing process of the wafer W. And the ducts 64, 61, 62, 63, 74, 75, 76 and the dampers 71, 72, 73, 77 can be efficiently cleaned.

  As mentioned above, although embodiment by this invention has been described, naturally, various deformation | transformation are also possible within the range of the summary of this invention. Hereinafter, typical modifications will be described.

  That is, in the present embodiment, the main exhaust damper 77 is provided between the liquid processing unit 40 and the second branch portion 64b of the main exhaust duct 64, and the cleaning fluid ejection unit 80 is connected to the liquid processing unit 40 and the main exhaust. A first cleaning fluid nozzle 81 provided between the damper 77 and a second cleaning fluid nozzle 82 provided between the main exhaust damper 77 and the second branch part 64b of the main exhaust duct 64; Explained an example. However, the present invention is not limited to this, and when the main exhaust damper 77 is not provided between the liquid processing unit 40 and the main exhaust duct 64, the cleaning fluid ejection unit 80 includes the second cleaning fluid nozzle 82. It may consist of only.

In the present embodiment, the example in which the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 are configured as two-fluid nozzles has been described. However, the present invention is not limited to this, and the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 are configured as two-fluid nozzles as long as they can eject a mist-like cleaning liquid as the cleaning fluid. It is not limited to. In addition, the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 have been described with respect to the example in which pure water and N ₂ gas are mixed and ejected, but the liquid and gas used as the cleaning fluid are limited to this. There is nothing.

  Further, in the present embodiment, the example in which the cleaning fluid is ejected from the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 each time the wafer W is loaded and unloaded in the liquid processing unit 40 has been described. However, the present invention is not limited to this, and the cleaning fluid may be ejected from the first cleaning fluid nozzle 81 and the second cleaning fluid nozzle 82 after sequentially processing a plurality of wafers W.

  In the present embodiment, the example in which the guide cup 50 is movable up and down with respect to the wafer W held on the rotating plate 42 has been described. However, the present invention is not limited to this, and the guide cup 50 is fixed around the rotary plate 42. The rotary plate 42 moves up and down in the liquid processing chamber 41, and the lower cup portion 51, the middle cup portion 52, and The processing liquid may be guided to the upper cup portion 53.

  In the present embodiment, the acid exhaust duct 61 is connected to the most downstream side of the main exhaust duct 64 in the exhaust direction, and the acid damper 71 is opened and the alkali damper 72 and the organic damper 73 are closed. An example in which fluid is ejected has been described. However, the present invention is not limited to this, and the alkali exhaust duct 62 may be connected to the most downstream side of the main exhaust duct 64 in the exhaust direction. In this case, the cleaning fluid may be ejected with the alkali damper 72 opened and the acid damper 71 and the organic damper 73 closed. Alternatively, similarly, the organic duct 63 may be connected to the most downstream side of the main exhaust duct 64 in the exhaust direction. Even in this case, the dampers 71, 72, 73 can be cleaned together with the main exhaust duct 64.

  Furthermore, in the present embodiment, an example has been described in which the SPM liquid is used as the acidic processing liquid, the SC1 liquid is used as the alkaline processing liquid, the pure water is used as the rinsing processing liquid, and the IPA liquid is used as the organic processing liquid. However, the present invention is not limited to this, and HF (hydrogen fluoride), SC2 (mixed solution of hydrochloric acid and hydrogen peroxide solution) or the like may be used as the acidic treatment liquid, and ammonia water or the like is used as the alkaline treatment liquid. May be. Moreover, you may use the process liquid generally used for each process liquid including a rinse process liquid and an organic process liquid.

  In the above description, the liquid processing apparatus, the liquid processing method, and the recording medium on which the computer program for executing the liquid processing method according to the present invention is recorded is applied to the cleaning process of the semiconductor wafer W. Show. However, the present invention is not limited to this, and the present invention can also be applied to cleaning various substrates (objects to be processed) such as an LCD substrate or a CD substrate.

DESCRIPTION OF SYMBOLS 10 Liquid processing apparatus 31 Liquid processing part side conveyance mechanism 40 Liquid processing part 45 Acid nozzle 46 Alkali nozzle 61 Acid exhaust duct 62 Alkaline exhaust duct 63 Organic exhaust duct 64 Main exhaust duct 64a First branch part 64b Second branch parts 65 and 66 67 Mist trap 71 Acid damper 72 Alkali damper 73 Organic damper 77 Main exhaust damper 80 Cleaning fluid ejection part 81 First cleaning fluid nozzle 82 Second cleaning fluid nozzle W Wafer

Claims (11)

A liquid treatment unit having an acidic treatment liquid supply unit for supplying an acidic treatment liquid to a target object, and an alkaline treatment liquid supply unit for supplying an alkaline treatment liquid;
A main exhaust duct connected to the liquid treatment unit;
A plurality of individual exhaust ducts that are sequentially connected to the main exhaust duct from the downstream side in the exhaust direction, and discharge the atmosphere in the liquid treatment unit;
A plurality of exhaust on-off valves provided between the main exhaust duct and each of the plurality of individual exhaust ducts, wherein one exhaust on-off valve of the plurality of exhaust on-off valves is attached to the object to be processed. The plurality of exhaust on-off valves that are opened when an acidic processing liquid is supplied, and the other exhaust on-off valve is opened when an alkaline processing liquid is supplied to the workpiece. With
The main exhaust duct has a branching portion that branches to an individual exhaust duct located on the most upstream side in the exhaust direction among the plurality of individual exhaust ducts,
A cleaning fluid ejection part for ejecting a cleaning fluid is provided between the liquid processing unit and the branch part of the main exhaust duct
The cleaning fluid ejection unit ejects cleaning fluid while opening an exhaust on-off valve corresponding to an individual exhaust duct located on the most downstream side in the exhaust direction among the plurality of individual exhaust ducts and closing other exhaust on-off valves A liquid processing apparatus. A main exhaust on-off valve is provided between the liquid treatment unit and the branch portion of the main exhaust duct;
The cleaning fluid ejection part is provided between a first cleaning fluid nozzle provided between the liquid processing part and the main exhaust on-off valve, and between the main exhaust on-off valve and the branch part of the main exhaust duct. A second cleaning fluid nozzle,
The first cleaning fluid nozzle and the second cleaning fluid nozzle are cleaned in a state where the exhaust opening / closing valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction is opened and the other exhaust opening / closing valve is closed. The liquid processing apparatus according to claim 1, wherein fluid is ejected.   The liquid processing apparatus according to claim 1, wherein the cleaning fluid ejection unit ejects a mist-like cleaning liquid as a cleaning fluid.   The liquid processing apparatus according to claim 3, wherein a gas-liquid separation unit that separates the liquid and the gas is provided in the individual exhaust duct located on the most downstream side in the exhaust direction. A transport mechanism for carrying the workpiece into and out of the liquid processing section;
5. The liquid processing according to claim 1, wherein the cleaning fluid ejection unit ejects a cleaning fluid when the object to be processed is carried in and out by the transport mechanism in the liquid processing unit. apparatus. A liquid treatment part having an acidic treatment liquid supply part for supplying an acidic treatment liquid to the object to be treated; an alkaline treatment liquid supply part for supplying an alkaline treatment liquid; a main exhaust duct connected to the liquid treatment part; A plurality of individual exhaust ducts connected to the main exhaust duct sequentially from the downstream side in the exhaust direction and exhausting the atmosphere in the liquid processing unit, and provided between the main exhaust duct and each of the plurality of individual exhaust ducts A plurality of the exhaust on-off valves, wherein one of the plurality of exhaust on-off valves is opened when the acid treatment liquid is supplied to the object to be processed, and the other one of the exhaust on-off valves The valve includes the plurality of exhaust on-off valves that are opened when an alkaline processing liquid is supplied to the object to be processed, and the main exhaust duct is an exhaust of the plurality of individual exhaust ducts. Individual located on the most upstream side The liquid treatment apparatus includes a branch portion that branches to an exhaust duct, and a cleaning fluid ejection portion that ejects a cleaning fluid between the liquid treatment portion and the branch portion of the main exhaust duct. In a liquid treatment method for treating a treated body,
Supplying an acidic treatment liquid from the acidic treatment liquid supply unit to the object to be treated;
Supplying an alkaline processing liquid from the alkaline processing liquid supply unit to the object to be processed;
Opening the exhaust on / off valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction among the plurality of individual exhaust ducts and closing the other exhaust on / off valves to eject the cleaning fluid from the cleaning fluid ejection section; A liquid treatment method comprising the steps of: A main exhaust on-off valve is provided between the liquid treatment unit and the branch portion of the main exhaust duct;
The cleaning fluid ejection part is provided between a first cleaning fluid nozzle provided between the liquid processing part and the main exhaust on-off valve, and between the main exhaust on-off valve and the branch part of the main exhaust duct. A second cleaning fluid nozzle,
In the step of ejecting the cleaning fluid, the exhaust opening / closing valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction is opened and the other exhaust opening / closing valve is closed, and the first cleaning fluid nozzle and the first 7. The liquid processing method according to claim 6, wherein the cleaning fluid is ejected from the cleaning fluid nozzle.   8. The liquid processing method according to claim 6, wherein in the step of ejecting the cleaning fluid, a mist-like cleaning liquid is ejected as the cleaning fluid. The individual exhaust duct located on the most downstream side in the exhaust direction is provided with a gas-liquid separator that separates liquid and gas,
The liquid processing method according to claim 8, wherein the cleaning fluid ejected from the cleaning fluid ejection unit is separated into a liquid and a gas in the gas-liquid separation unit.   The liquid processing method according to claim 6, wherein a step of ejecting the cleaning fluid is performed when the object to be processed is carried in and out in the liquid processing unit. A liquid treatment part having an acidic treatment liquid supply part for supplying an acidic treatment liquid to the object to be treated; an alkaline treatment liquid supply part for supplying an alkaline treatment liquid; a main exhaust duct connected to the liquid treatment part; A plurality of individual exhaust ducts connected to the main exhaust duct sequentially from the downstream side in the exhaust direction and exhausting the atmosphere in the liquid processing unit, and provided between the main exhaust duct and each of the plurality of individual exhaust ducts A plurality of the exhaust on-off valves, wherein one of the plurality of exhaust on-off valves is opened when the acid treatment liquid is supplied to the object to be processed, and the other one of the exhaust on-off valves The valve includes the plurality of exhaust on-off valves that are opened when an alkaline processing liquid is supplied to the object to be processed, and the main exhaust duct is an exhaust of the plurality of individual exhaust ducts. Individual located on the most upstream side The liquid treatment apparatus includes a branch portion that branches to an exhaust duct, and a cleaning fluid ejection portion that ejects a cleaning fluid between the liquid treatment portion and the branch portion of the main exhaust duct. A recording medium on which a computer program for executing a liquid processing method for processing a processing body is recorded,
This liquid treatment method
Supplying an acidic treatment liquid from the acidic treatment liquid supply unit to the object to be treated;
Supplying an alkaline processing liquid from the alkaline processing liquid supply unit to the object to be processed;
Opening the exhaust on / off valve corresponding to the individual exhaust duct located on the most downstream side in the exhaust direction among the plurality of individual exhaust ducts and closing the other exhaust on / off valves to eject the cleaning fluid from the cleaning fluid ejection section; A recording medium comprising:

Images