JP2012078089A - Gas sensor - Google Patents

Gas sensor Download PDF

Info

Publication number
JP2012078089A
JP2012078089A JP2010220480A JP2010220480A JP2012078089A JP 2012078089 A JP2012078089 A JP 2012078089A JP 2010220480 A JP2010220480 A JP 2010220480A JP 2010220480 A JP2010220480 A JP 2010220480A JP 2012078089 A JP2012078089 A JP 2012078089A
Authority
JP
Japan
Prior art keywords
gas
cover
semiconductor chip
gas sensor
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010220480A
Other languages
Japanese (ja)
Other versions
JP5403695B2 (en
Inventor
Kazuya Aranishi
一哉 新西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Figaro Engineering Inc
Original Assignee
Figaro Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Figaro Engineering Inc filed Critical Figaro Engineering Inc
Priority to JP2010220480A priority Critical patent/JP5403695B2/en
Publication of JP2012078089A publication Critical patent/JP2012078089A/en
Application granted granted Critical
Publication of JP5403695B2 publication Critical patent/JP5403695B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

PROBLEM TO BE SOLVED: To provide a gas sensor in which an insulating film with a gas sensing part is provided on one surface of a semiconductor chip, a cavity is provided to the semiconductor chip on the rear surface of the gas sensing part, the semiconductor chip penetrates from the one surface to the opposite surface, includes a conductive via electrically connected to the gas sensing part, and wiring which is provided on the opposite surface and connected to the via, and the gas sensing part is covered with a breathable cover fixed to the semiconductor chip.SOLUTION: A gas sensor is mounted on a printed circuit board with neither die bonding nor wire bonding to a package.

Description

この発明は半導体チップのキャビティに感ガス部を設けたガスセンサに関し、特にガスセンサの実装構造に関する。   The present invention relates to a gas sensor having a gas sensitive part provided in a cavity of a semiconductor chip, and more particularly to a gas sensor mounting structure.

MEMS(Micro Electro Mechanical Systems)技術を用い、半導体チップのキャビティ上に感ガス部を設けたガスセンサが研究されている。しかしこのようなガスセンサの実装構造については、余り検討されていない。そしてMEMS型のガスセンサを単純に実装すると、パッケージにガスセンサの半導体チップをダイボンドし、電極のパッドをワイヤボンドし、更にチップをカバーで保護することになる。しかしこれでは実装構造が複雑である。   Gas sensors in which a gas sensitive part is provided on a cavity of a semiconductor chip using MEMS (Micro Electro Mechanical Systems) technology have been studied. However, the mounting structure of such a gas sensor has not been studied much. When the MEMS type gas sensor is simply mounted, the semiconductor chip of the gas sensor is die-bonded to the package, the electrode pads are wire-bonded, and the chip is further protected by the cover. However, this makes the mounting structure complicated.

ここで関連する先行技術を示すと、特許文献1:JP2001-337063A、特許文献2:JP2002-174608Aは、パッケージに固定したリードにガスセンサの基板をフリップチップ接続することを開示している。なおガスセンサはMEMS型ではなく、基板に感ガス部を厚膜印刷で設けたものである。   Prior arts related here are disclosed in Patent Document 1: JP2001-337063A and Patent Document 2: JP2002-174608A in which a gas sensor substrate is flip-chip connected to a lead fixed to a package. The gas sensor is not a MEMS type, and a gas sensitive part is provided on a substrate by thick film printing.

JP2001-337063AJP2001-337063A JP2002-174608AJP2002-174608A

この発明の課題は、パッケージへのダイボンドもワイヤボンドも無しに、ガスセンサをプリント基板に実装できるようにすることにある。
この発明の追加の課題は、ガスセンサにガスフィルタを設けることにある。
An object of the present invention is to enable a gas sensor to be mounted on a printed circuit board without die bonding or wire bonding to a package.
An additional object of the present invention is to provide a gas filter in the gas sensor.

この発明は、半導体チップの一面に感ガス部を有する絶縁膜が設けられ、感ガス部の裏面で半導体チップにキャビティが設けられたガスセンサにおいて、半導体チップは、一面から反対面へと貫通し感ガス部に電気的に接続される導電性のビアと、反対面に設けられかつビアに接続される配線、とを備え、かつ感ガス部が半導体チップに固着された通気性のカバーで覆われていることを特徴とする。   According to the present invention, in a gas sensor in which an insulating film having a gas sensitive part is provided on one surface of a semiconductor chip and a cavity is provided in the semiconductor chip on the back surface of the gas sensitive part, the semiconductor chip penetrates from one surface to the opposite surface. A conductive via electrically connected to the gas part and a wiring provided on the opposite surface and connected to the via, and the gas sensitive part covered with a breathable cover fixed to the semiconductor chip It is characterized by.

この発明では、半導体チップをプリント基板等に直接接続でき、パッケージが不要で、ダイボンドもワイヤボンドも不要である。また感ガス部を覆うカバーを半導体チップに固着し、パッケージ無しでカバーを取り付ける。   In the present invention, a semiconductor chip can be directly connected to a printed circuit board or the like, no package is required, and neither die bonding nor wire bonding is required. Also, a cover covering the gas sensitive part is fixed to the semiconductor chip, and the cover is attached without a package.

好ましくは、カバーはセラミックまたはガラスから成り、かつ半導体チップへ至るカバー内の通気路にガスフィルタが設けられている。このようにすると、ガスフィルタをMEMS型のガスセンサに設けることができる。
より好ましくは、感ガス部から見て反対側の位置で、カバーにガスフィルタを収容する凹部が設けられている。このようにすると、簡単な構造のカバーでガスフィルタを設けることができる。
Preferably, the cover is made of ceramic or glass, and a gas filter is provided in an air passage in the cover leading to the semiconductor chip. In this way, the gas filter can be provided in the MEMS type gas sensor.
More preferably, a recess for accommodating the gas filter is provided in the cover at a position opposite to the gas sensitive part. If it does in this way, a gas filter can be provided with the cover of a simple structure.

特に好ましくは、凹部を覆い孔がある金属のリッドがカバーに固着されている。このようにすると、ガスフィルタの脱落を簡単に防止できる。またカバーに凹部を覆う蓋を設けても、ガスフィルタの脱落を防止できる。
Particularly preferably, a metal lid covering the recess and having a hole is fixed to the cover. If it does in this way, drop-off of a gas filter can be prevented easily. Moreover, even if the cover is provided with a cover that covers the recess, the gas filter can be prevented from falling off.

実施例のガスセンサとプリント基板との断面図Sectional drawing of gas sensor of example and printed circuit board 実施例での半導体チップの平面図Plan view of semiconductor chip in example 実施例でのカバーの平面図Plan view of the cover in the embodiment 変形例のガスセンサの断面図Cross-sectional view of a modified gas sensor 第2の実施例のガスセンサの断面図Sectional drawing of the gas sensor of 2nd Example 第2の実施例でのカバーの平面図Plan view of the cover in the second embodiment

以下に本発明を実施するための最適実施例を示す。   In the following, an optimum embodiment for carrying out the present invention will be shown.

図1〜図5に、実施例とその変形とを示す。図1〜図3に最初の実施例を示し、図において2はガスセンサ、4はガスセンサ2をハンダ付けしたプリント基板である。ガスセンサ2は半導体チップ6とカバー8とから成り、半導体チップ6はシリコンあるいはGaAsなどから構成され、その一面にシリカあるいは酸化タンタルなどの絶縁膜12が設けられ、絶縁膜12の裏面側にキャビティ10が設けられている。なおキャビティ10は絶縁膜12側からエッチングにより設けても、あるいはチップ6の反対面側から設けてもよい。   1 to 5 show an embodiment and its modifications. 1 to 3 show a first embodiment, in which 2 is a gas sensor and 4 is a printed circuit board on which the gas sensor 2 is soldered. The gas sensor 2 includes a semiconductor chip 6 and a cover 8. The semiconductor chip 6 is made of silicon or GaAs. An insulating film 12 such as silica or tantalum oxide is provided on one surface of the gas sensor 2, and a cavity 10 is formed on the back surface side of the insulating film 12. Is provided. The cavity 10 may be provided by etching from the insulating film 12 side or from the opposite side of the chip 6.

絶縁膜12中のキャビティ10上で例えば方形の部分をベース14とし、ベース14は脚15により、キャビティ10の外部の絶縁膜12に接続されている。ベース14上に、金属酸化物半導体ガスセンサもしくは接触燃焼式ガスセンサなどの感ガス部16を設ける。感ガス部16に例えば4本の配線17を接続し、他端を図2に示す導電性でチップ6を貫通するビア18に接続する。ビア18は、チップ6への反応性イオンエッチングなどにより設けられ、Cuなどの導電体が充填されている。感ガス部16から見てチップ6の反対面側にパッド20を設けてビア18に接続し、パッドは配線の例であり、ハンダバンプ22を介してプリント基板4の配線24にハンダ付けする。なおMEMS型のガスセンサでは、半導体チップ6の構成として種々のものが知られており、感ガス部16の構成、絶縁膜12の構成などは適宜に変更できる。またハンダバンプ22はプリント基板4の一部である。   For example, a rectangular portion on the cavity 10 in the insulating film 12 is a base 14, and the base 14 is connected to the insulating film 12 outside the cavity 10 by a leg 15. A gas sensitive part 16 such as a metal oxide semiconductor gas sensor or a catalytic combustion type gas sensor is provided on the base 14. For example, four wirings 17 are connected to the gas sensitive part 16, and the other end is connected to a via 18 penetrating the chip 6 with conductivity shown in FIG. The via 18 is provided by reactive ion etching or the like on the chip 6 and is filled with a conductor such as Cu. A pad 20 is provided on the opposite side of the chip 6 as viewed from the gas sensitive part 16 and connected to the via 18. The pad is an example of wiring, and is soldered to the wiring 24 of the printed circuit board 4 via the solder bumps 22. In the MEMS type gas sensor, various configurations of the semiconductor chip 6 are known, and the configuration of the gas sensitive portion 16 and the configuration of the insulating film 12 can be changed as appropriate. The solder bump 22 is a part of the printed circuit board 4.

半導体チップ6の、感ガス部16側の面に、チップ6の四周を取り囲むように金属層26が設けられている。カバー8は例えばセラミックもしくはガラスから成り、30,34はキャビティで、キャビティ30,34間には多孔質層32が設けられている。なおカバー8をガラスとする場合、多孔質層32の代わりに貫通孔を設ける。35は金属のリッドで、孔36が設けられ、カバー8の上端の金属層37に溶接、ハンダ付けなどで固定されている。リッド35はキャビティ34の蓋となり、キャビティ34にはシート状の活性炭、シート状のゼオライトなどから成るガスフィルタ38が収容されている。そしてカバー8の底面に金属層39が設けられ、バンプ40を介してチップの金属層26に固着されている。カバー8からリッド35とガスフィルタ38を除いた状態を図3に示す。   A metal layer 26 is provided on the surface of the semiconductor chip 6 on the gas sensitive part 16 side so as to surround the four circumferences of the chip 6. The cover 8 is made of, for example, ceramic or glass, 30 and 34 are cavities, and a porous layer 32 is provided between the cavities 30 and 34. When the cover 8 is made of glass, a through hole is provided instead of the porous layer 32. A metal lid 35 is provided with a hole 36 and fixed to the metal layer 37 at the upper end of the cover 8 by welding or soldering. The lid 35 serves as a lid for the cavity 34, and the cavity 34 accommodates a gas filter 38 made of sheet-like activated carbon, sheet-like zeolite, or the like. A metal layer 39 is provided on the bottom surface of the cover 8 and is fixed to the metal layer 26 of the chip via bumps 40. FIG. 3 shows a state where the lid 35 and the gas filter 38 are removed from the cover 8.

図1〜図3のガスセンサ2を製造するには、半導体チップに例えば最初にビア18とパッド20とを形成する。次いで通常のMEMS型ガスセンサのように、キャビティ10,ベース14,感ガス部16等を形成する。またカバー8をセラミックで形成する場合、例えば3層のセラミックとし、最下層のセラミックシートに孔を設けてキャビティ30とし、最上層のセラミックシートにも同様に孔を設けてキャビティ34とする。また中間層のセラミックシートでは多孔質層32の部分に孔を設け、焼結後も多孔性を維持する材料を充填する。次いで3層を積層し焼成し、ガスフィルタ38をキャビティ34にセットし、リッド35を金属層37に結合する。そしてバンプ40を用いて、金属層26,39を接合すると、感ガス部16の周囲四周を封止できる。このようにしてガスセンサ2が完成し、プリント基板4にハンダ付けで取り付ける。なおカバー8をガラスとする場合、エッチングあるいは機械加工などによりキャビティ30,34を設け、多孔質層32の部分にも同様に孔を設ける。またバンプ40、金属層26,39に代えて、樹脂接着剤などでカバー8とチップ6の隙間を封止してもよく、あるいは封止を省略してもよい。同様にリッド35も、樹脂などでカバー8に固着してもよい。さらにバンプ40として背の高いバンプ、例えば感ガス部16の厚さよりも背の高いバンプを用いると、キャビティ30は設けなくてもよい。   In order to manufacture the gas sensor 2 of FIGS. 1 to 3, for example, the via 18 and the pad 20 are first formed in the semiconductor chip. Next, the cavity 10, the base 14, the gas sensitive part 16 and the like are formed as in a normal MEMS gas sensor. Further, when the cover 8 is formed of ceramic, for example, three layers of ceramics are formed, a hole is provided in the lowermost ceramic sheet to form the cavity 30, and a hole is similarly provided in the uppermost ceramic sheet to form the cavity 34. Moreover, in the ceramic sheet of the intermediate layer, holes are provided in the porous layer 32 and filled with a material that maintains the porosity even after sintering. Next, the three layers are stacked and fired, the gas filter 38 is set in the cavity 34, and the lid 35 is bonded to the metal layer 37. Then, when the metal layers 26 and 39 are bonded using the bumps 40, the four circumferences around the gas sensitive part 16 can be sealed. In this way, the gas sensor 2 is completed and attached to the printed circuit board 4 by soldering. When the cover 8 is made of glass, cavities 30 and 34 are provided by etching or machining, and holes are similarly provided in the porous layer 32 portion. Further, instead of the bump 40 and the metal layers 26 and 39, the gap between the cover 8 and the chip 6 may be sealed with a resin adhesive or the like, or the sealing may be omitted. Similarly, the lid 35 may be fixed to the cover 8 with resin or the like. Further, if a tall bump, for example, a bump taller than the thickness of the gas sensitive portion 16 is used as the bump 40, the cavity 30 may not be provided.

好ましくは、チップ6を多数含むウェハーもしくはチップ6を多数含むサブウェハーに、カバー8を多数含む板をバンプ40でフリップチップ接続する。ここで好ましくは多数の未切断のリッド35から成る金属板を、板に金属層37で取り付けておく。次いで、多数のカバー8から成る板を取り付けたウェハーもしくはサブウェハーを、個々のガスセンサ2へとダイシングする。このようにすると、チップ6へのカバー8の取り付けを、ウェハーもしくはサブウェハーの段階で一括して行える。またリッド35の取り付けも容易になる。   Preferably, a plate including a large number of covers 8 is flip-chip connected to a wafer including a large number of chips 6 or a sub-wafer including a large number of chips 6 by bumps 40. Here, a metal plate made of a large number of uncut lids 35 is preferably attached to the plate with a metal layer 37. Next, the wafer or sub-wafer to which the plate composed of a large number of covers 8 is attached is diced into individual gas sensors 2. In this way, the cover 8 can be attached to the chip 6 at the wafer or sub-wafer stage. Further, the lid 35 can be easily attached.

図4に変形例を示し、図1〜図3と同じ符号は同じものを表す。図4の変形例では、半導体チップ6は実施例と同じで、カバー48はキャビティ34とガスフィルタ38,リッド35を備えていない。カバー48は例えばセラミックカバーで、キャビティ30を備え、多孔質層32の部分で通気性を備えている。なおセラミックに代えて、ガラスカバーとして、多孔質層32に代えて透孔を設けても良い。また多孔質層32の部分を、焼結性の低いガスフィルタ材料、例えばγ−アルミナ、不定形アルミナ、ゼオライト等で構成しても良い。この場合、カバー48をキャビティ30を設けた層と、孔内にガスフィルタ材料を充填した層の2層で構成する。   FIG. 4 shows a modified example, and the same reference numerals as those in FIGS. 1 to 3 denote the same components. In the modification of FIG. 4, the semiconductor chip 6 is the same as the embodiment, and the cover 48 does not include the cavity 34, the gas filter 38, and the lid 35. The cover 48 is, for example, a ceramic cover, includes a cavity 30, and has air permeability at the porous layer 32 portion. In place of ceramic, a glass cover may be provided with through holes instead of the porous layer 32. Further, the porous layer 32 may be made of a gas filter material having low sinterability, such as γ-alumina, amorphous alumina, zeolite, or the like. In this case, the cover 48 is composed of two layers: a layer provided with the cavity 30 and a layer filled with a gas filter material in the hole.

図5,図6に第2の実施例のガスセンサ52を示し、図1〜図3と同じ符号は同じものを表す。58はセラミック等の新たなカバーで、キャビティ34の上面を覆う蓋53と、キャビティ34の周囲3方を覆う側壁54を備え、キャビティ34の残る一方の側面に開口55が設けられ、シート状のガスフィルタ38の挿入口とする。そして孔50もしくは多孔質層などを介し、キャビティ30,34間の通気路を形成する。図5,図6の実施例では、開口55からシート状のガスフィルタ38などをキャビティ34内にセットできる。   5 and 6 show a gas sensor 52 of the second embodiment, and the same reference numerals as those in FIGS. 1 to 3 denote the same components. 58 is a new cover made of ceramic or the like, and includes a lid 53 that covers the upper surface of the cavity 34 and a side wall 54 that covers three sides of the cavity 34, and an opening 55 is provided on the other side surface of the cavity 34. The insertion port for the gas filter 38 is used. An air passage between the cavities 30 and 34 is formed through the holes 50 or the porous layer. 5 and 6, a sheet-like gas filter 38 and the like can be set in the cavity 34 from the opening 55.

実施例では以下の効果が得られる。
(1) ガスセンサ2,52をプリント基板4に直接実装できる。そしてパッケージもワイヤボンドもダイボンドも不要である。
(2) 感ガス部16をカバー8などで保護できる。カバー8とチップ6との隙間はバンプ40などで封止でき、また樹脂接着剤でも封止できる。
(3) キャビティ34にガスフィルタ38を収容することにより、被毒性のガスを除去し、あるいは不要なガスを除去できる。なおガスフィルタ38はシート状に限らず、粒状として、そのままあるいは適宜の接着剤と共に、キャビティ34に収容しても良い。
In the embodiment, the following effects can be obtained.
(1) The gas sensors 2 and 52 can be directly mounted on the printed circuit board 4. And no package, wire bond or die bond is required.
(2) The gas sensitive part 16 can be protected by the cover 8 or the like. The gap between the cover 8 and the chip 6 can be sealed with a bump 40 or the like, or can be sealed with a resin adhesive.
(3) By storing the gas filter 38 in the cavity 34, the toxic gas can be removed or unnecessary gas can be removed. The gas filter 38 is not limited to a sheet shape, and may be accommodated in the cavity 34 as a granule as it is or with an appropriate adhesive.

2,42 ガスセンサ
4 プリント基板
6 半導体チップ
8 カバー
10 キャビティ
12 絶縁膜
14 ベース
15 脚
16 感ガス部
17 配線
18 ビア
20 パッド
22 ハンダバンプ
24 配線
26 金属層
30,34 キャビティ
32 多孔質層
35 リッド
36 孔
37 金属層
38 ガスフィルタ
39 金属層
40 バンプ
48,58 カバー
50 孔
52 ガスセンサ
53 蓋
54 側壁
55 開口
2,42 Gas sensor 4 Printed circuit board 6 Semiconductor chip 8 Cover 10 Cavity 12 Insulating film 14 Base 15 Leg 16 Leg 16 Sensitive part 17 Wiring 18 Via 20 Pad 22 Solder bump 24 Wiring 26 Metal layer 30, 34 Cavity 32 Porous layer 35 Lid 36 Hole 37 Metal layer 38 Gas filter 39 Metal layer 40 Bump 48, 58 Cover 50 Hole 52 Gas sensor 53 Lid 54 Side wall 55 Opening

Claims (5)

半導体チップの一面に感ガス部を有する絶縁膜が設けられ、前記感ガス部の裏面で半導体チップにキャビティが設けられたガスセンサにおいて、
前記半導体チップは、前記一面から反対面へと貫通し前記感ガス部に電気的に接続される導電性のビアと、前記反対面に設けられかつ前記ビアに接続される配線、とを備え、
かつ前記感ガス部が半導体チップに固着された通気性のカバーで覆われていることを特徴とする、ガスセンサ。
In a gas sensor in which an insulating film having a gas sensitive part is provided on one surface of a semiconductor chip, and a cavity is provided in the semiconductor chip on the back surface of the gas sensitive part,
The semiconductor chip includes a conductive via that penetrates from the one surface to the opposite surface and is electrically connected to the gas sensitive portion, and a wiring that is provided on the opposite surface and connected to the via,
The gas sensor is covered with a breathable cover fixed to a semiconductor chip.
前記カバーはセラミックまたはガラスから成り、かつ半導体チップへ至るカバー内の通気路にガスフィルタが設けられていることを特徴とする、請求項1のガスセンサ。   The gas sensor according to claim 1, wherein the cover is made of ceramic or glass, and a gas filter is provided in a ventilation path in the cover leading to the semiconductor chip. 前記感ガス部から見て反対側の位置で、前記カバーに前記ガスフィルタを収容する凹部が設けられていることを特徴とする、請求項2のガスセンサ。   3. The gas sensor according to claim 2, wherein a concave portion for accommodating the gas filter is provided in the cover at a position opposite to the gas sensitive portion. 前記凹部を覆い孔がある金属のリッドが前記カバーに固着されていることを特徴とする、請求項3のガスセンサ。   4. The gas sensor according to claim 3, wherein a metal lid that covers the recess and has a hole is fixed to the cover. 前記カバーは前記凹部を覆う蓋を備えていることを特徴とする、請求項3のガスセンサ。   The gas sensor according to claim 3, wherein the cover includes a lid that covers the recess.
JP2010220480A 2010-09-30 2010-09-30 Gas sensor Active JP5403695B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010220480A JP5403695B2 (en) 2010-09-30 2010-09-30 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010220480A JP5403695B2 (en) 2010-09-30 2010-09-30 Gas sensor

Publications (2)

Publication Number Publication Date
JP2012078089A true JP2012078089A (en) 2012-04-19
JP5403695B2 JP5403695B2 (en) 2014-01-29

Family

ID=46238530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010220480A Active JP5403695B2 (en) 2010-09-30 2010-09-30 Gas sensor

Country Status (1)

Country Link
JP (1) JP5403695B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8852513B1 (en) * 2011-09-30 2014-10-07 Silicon Laboratories Inc. Systems and methods for packaging integrated circuit gas sensor systems
KR20150031710A (en) * 2013-09-16 2015-03-25 엘지이노텍 주식회사 Package for gas sensor and fabricating method of the same
WO2016114508A1 (en) * 2015-01-14 2016-07-21 엘지이노텍 주식회사 Sensor package
WO2017188700A1 (en) * 2016-04-27 2017-11-02 Lg Electronics Inc. Sensor
KR101826265B1 (en) * 2017-02-24 2018-02-06 (주)엑센 Gas sensor package
US20180100841A1 (en) * 2016-10-10 2018-04-12 Point Engineering Co., Ltd. Micro Sensor Package and Manufacturing Method Thereof
CN107915200A (en) * 2016-10-10 2018-04-17 普因特工程有限公司 Microsensor encapsulates
WO2018116663A1 (en) * 2016-12-20 2018-06-28 Nissha株式会社 Gas sensor module and method for manufacturing same
WO2018155980A1 (en) * 2017-02-24 2018-08-30 (주)엑센 Gas sensor, gas sensor element, and gas sensor package
US10634634B2 (en) 2016-09-13 2020-04-28 Point Engineering Co., Ltd. Micro sensor package and manufacturing method of micro sensor package
US10705064B2 (en) 2016-09-13 2020-07-07 Point Engineering Co., Ltd. Micro sensor package
WO2020195673A1 (en) * 2019-03-27 2020-10-01 Nissha株式会社 Mems gas sensor mounted body

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145954A (en) * 1986-07-29 1988-06-18 Sharp Corp Moisture sensitive element
JP2001337063A (en) * 2000-05-25 2001-12-07 Figaro Eng Inc Gas sensor and its manufacturing method
JP2002174608A (en) * 2000-12-06 2002-06-21 Figaro Eng Inc Gas sensor and its manufacturing method
JP2005166790A (en) * 2003-12-01 2005-06-23 Ngk Spark Plug Co Ltd Sensor element mounting package
JP2006266714A (en) * 2005-03-22 2006-10-05 Riken Keiki Co Ltd Combustible gas sensor
JP2011106921A (en) * 2009-11-16 2011-06-02 Kyocera Corp Substrate for gas sensor, package for gas sensor, and gas sensor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63145954A (en) * 1986-07-29 1988-06-18 Sharp Corp Moisture sensitive element
JP2001337063A (en) * 2000-05-25 2001-12-07 Figaro Eng Inc Gas sensor and its manufacturing method
JP2002174608A (en) * 2000-12-06 2002-06-21 Figaro Eng Inc Gas sensor and its manufacturing method
JP2005166790A (en) * 2003-12-01 2005-06-23 Ngk Spark Plug Co Ltd Sensor element mounting package
JP2006266714A (en) * 2005-03-22 2006-10-05 Riken Keiki Co Ltd Combustible gas sensor
JP2011106921A (en) * 2009-11-16 2011-06-02 Kyocera Corp Substrate for gas sensor, package for gas sensor, and gas sensor

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8852513B1 (en) * 2011-09-30 2014-10-07 Silicon Laboratories Inc. Systems and methods for packaging integrated circuit gas sensor systems
KR20150031710A (en) * 2013-09-16 2015-03-25 엘지이노텍 주식회사 Package for gas sensor and fabricating method of the same
KR102152716B1 (en) 2013-09-16 2020-09-07 엘지이노텍 주식회사 Package for gas sensor and fabricating method of the same
WO2016114508A1 (en) * 2015-01-14 2016-07-21 엘지이노텍 주식회사 Sensor package
US10388593B2 (en) 2016-04-27 2019-08-20 Lg Electronics Inc. Sensor
EP3449246A4 (en) * 2016-04-27 2020-01-01 LG Electronics Inc. -1- Sensor
WO2017188700A1 (en) * 2016-04-27 2017-11-02 Lg Electronics Inc. Sensor
US10634634B2 (en) 2016-09-13 2020-04-28 Point Engineering Co., Ltd. Micro sensor package and manufacturing method of micro sensor package
US10705064B2 (en) 2016-09-13 2020-07-07 Point Engineering Co., Ltd. Micro sensor package
CN107915200A (en) * 2016-10-10 2018-04-17 普因特工程有限公司 Microsensor encapsulates
US20180100841A1 (en) * 2016-10-10 2018-04-12 Point Engineering Co., Ltd. Micro Sensor Package and Manufacturing Method Thereof
KR102350203B1 (en) 2016-12-20 2022-01-13 닛샤 가부시키가이샤 Gas sensor module and manufacturing method thereof
WO2018116663A1 (en) * 2016-12-20 2018-06-28 Nissha株式会社 Gas sensor module and method for manufacturing same
JP2018100900A (en) * 2016-12-20 2018-06-28 Nissha株式会社 Gas sensor module and manufacturing method thereof
US11415536B2 (en) 2016-12-20 2022-08-16 Nissha Co., Ltd. Gas sensor module and method of manufacturing gas sensor module
KR20190096943A (en) * 2016-12-20 2019-08-20 닛샤 가부시키가이샤 Gas sensor module and its manufacturing method
WO2018155980A1 (en) * 2017-02-24 2018-08-30 (주)엑센 Gas sensor, gas sensor element, and gas sensor package
KR101826265B1 (en) * 2017-02-24 2018-02-06 (주)엑센 Gas sensor package
JPWO2020195673A1 (en) * 2019-03-27 2021-04-08 Nissha株式会社 MEMS gas sensor mount
CN113597549A (en) * 2019-03-27 2021-11-02 日写株式会社 MEMS gas sensor mounting body
WO2020195673A1 (en) * 2019-03-27 2020-10-01 Nissha株式会社 Mems gas sensor mounted body

Also Published As

Publication number Publication date
JP5403695B2 (en) 2014-01-29

Similar Documents

Publication Publication Date Title
JP5403695B2 (en) Gas sensor
JP5763682B2 (en) Miniaturized electrical device including MEMS and ASIC and method for manufacturing the same
KR101683688B1 (en) Integrated circuit package and method for manufacturing an integrated circuit package
JP2007180201A (en) Semiconductor device
JP5595230B2 (en) Gas sensor
EP3104410B1 (en) Multi-chip module, on-board computer, sensor interface substrate, and multi-chip module manufacturing method
TWI455265B (en) A package structure having a micro-electromechanical element and a manufacturing method thereof
JP6154458B2 (en) Electronic component storage package and electronic device
JP5483443B2 (en) Gas sensor and manufacturing method thereof
JP4854469B2 (en) Electronic component storage package, electronic device, and electronic device mounted device
US20160376143A1 (en) Mems device with electrodes permeable to outgassing species
JP2008034515A (en) Electronic apparatus and package
JP2007227596A (en) Semiconductor module and its manufacturing method
TW200822779A (en) Microphone package
EP2830989B1 (en) Cavity package design
JP2004296724A (en) Substrate for packaging electronic part and method for manufacturing electronic device using the same
JP2006329840A (en) Hybrid sensor component
JP2017059814A (en) Electronic component storage package and electronic apparatus
JP5665797B2 (en) PACKAGE FOR PRESSURE SENSOR, MANUFACTURING METHOD THEREOF, AND PRESSURE SENSOR
TW201839919A (en) Gas sensor package structure
JP5804762B2 (en) Piezoelectric device
JP2006047327A (en) Package for pressure detector, and the pressure detector
JP2003315190A (en) Package for pressure detector
JP2008147368A (en) Semiconductor device
JP2010129661A (en) Mounting structure of electronic device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130704

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131008

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131024

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131024

R150 Certificate of patent or registration of utility model

Ref document number: 5403695

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S802 Written request for registration of partial abandonment of right

Free format text: JAPANESE INTERMEDIATE CODE: R311802

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250