JP2012060172A5

JP2012060172A5 -

Info

Publication number: JP2012060172A5
Application number: JP2011276729A
Authority: JP
Filing date: 2011-12-19
Publication date: 2012-12-13
Anticipated expiration: 2030-02-16

Description

本発明の一態様によれば、サファイア基板の上に形成され、窒化物半導体を含むｎ型半導体層と、窒化物半導体を含むｐ型半導体層と、前記ｎ型半導体層と前記ｐ型半導体層との間に設けられ、窒化物半導体を含む複数の量子井戸層を含む発光部と、前記発光部と前記ｐ型半導体層との間に設けられ、０．００１以上０．０５以下の第１Ａｌ組成比を有するＡｌＧａＮを含み、０．５ナノメートル以上５ナノメートル以下の厚さを有する第１層と、前記第１層と前記ｐ型半導体層との間に設けられ、０．１以上０．２以下の第２Ａｌ組成比を有するＡｌＧａＮを含みｐ型不純物濃度が前記第１層よりも高い第２層と、前記第１層と前記発光部との間において、前記複数の量子井戸層のうちで前記ｐ型半導体層に最も近いｐ側量子井戸層に接し、厚さが３ナノメートル以上で８ナノメートル以下であり、Ｉｎ_ｚ１Ｇａ_１−ｚ１Ｎ（０≦ｚ１＜１）を含む中間層と、を備えたことを特徴とする半導体発光素子が提供される。 According to one aspect of the present invention, is formed on a sapphire substrate, and the n-type semiconductor layer comprising a nitride semiconductor, a p-type semiconductor layer comprising a nitride semiconductor, the p-type semiconductor as the previous SL n-type semiconductor layer A light emitting portion including a plurality of quantum well layers including a nitride semiconductor, and provided between the light emitting portion and the p-type semiconductor layer. A first layer including AlGaN having a 1Al composition ratio and having a thickness of not less than 0.5 nanometers and not more than 5 nanometers; provided between the first layer and the p-type semiconductor layer; a second higher layer than the unrealized p-type impurity concentration of AlGaN said first layer having a first 2Al composition ratio of 0.2 or less, in between the light emitting portion and the first layer, the plurality of quantum well In contact with the p-side quantum well layer closest to the p-type semiconductor layer Thickness is at 8 nm or less in 3 nm or _more, the semiconductor light emitting element is provided which is characterized in that and an including the intermediate layer _{In z1 Ga 1-z1 N (} 0 ≦ z1 <1) The

これに対し、実施形態に係る半導体発光素子１１０においては、中間層４０ｍ及び第１層４１を設けることで、Ａｌ組成比Ａｘが高い第２層４２の自発分極の影響を井戸層３２に与えることを抑制できるため、エネルギーバンド特性を所望の状態に制御できる。これにより、電子のオーバーフローを低減させ、かつ活性層への正孔の注入効率も上げることが可能となり、発光効率が高い。 On the other hand, in the semiconductor light emitting device 110 according to the embodiment, by providing the intermediate layer 40m and the first layer 41, the well layer 32 is affected by the spontaneous polarization of the second layer 42 having a high Al composition ratio Ax. Therefore, the energy band characteristic can be controlled to a desired state. Thereby, it is possible to reduce the overflow of electrons and increase the efficiency of injecting holes into the active layer, and the light emission efficiency is high.

Claims

An n-type semiconductor layer formed on a sapphire substrate and including a nitride semiconductor ;
A p-type semiconductor layer including a nitride semiconductor ;
Provided between the pre-Symbol n-type semiconductor layer and the p-type semiconductor layer, a light emitting unit including a plurality of quantum well layers containing nitride semiconductor,
It is provided between the light emitting part and the p-type semiconductor layer, includes AlGaN having a first Al composition ratio of 0.001 or more and 0.05 or less, and has a thickness of 0.5 nanometers or more and 5 nanometers or less. The first layer;
Provided between the p-type semiconductor layer and the first layer, the second is unrealized p-type impurity concentration of AlGaN is higher than the first layer having a first 2Al composition ratio of 0.1 to 0.2 Layers,
Between the first layer and the light emitting portion, the p-side quantum well layer closest to the p-type semiconductor layer among the plurality of quantum well layers is in contact with a thickness of 3 nanometers or more and 8 nanometers or less. and by _{_{and, in z1 Ga 1-z1 N}} (0 ≦ z1 <1) the including the intermediate layer,
A semiconductor light emitting device comprising:

And a third layer made of AlGaN provided between the first layer and the second layer and having a third Al composition ratio between the first Al composition ratio and the second Al composition ratio. The semiconductor light emitting device according to claim 1.

3. The semiconductor light emitting element according to claim 1, wherein an Al composition ratio gradually increases from the first layer toward the second layer.