JP2012054303A5 - - Google Patents

Download PDF

Info

Publication number
JP2012054303A5
JP2012054303A5 JP2010193964A JP2010193964A JP2012054303A5 JP 2012054303 A5 JP2012054303 A5 JP 2012054303A5 JP 2010193964 A JP2010193964 A JP 2010193964A JP 2010193964 A JP2010193964 A JP 2010193964A JP 2012054303 A5 JP2012054303 A5 JP 2012054303A5
Authority
JP
Japan
Prior art keywords
graphene
metal film
graphene layer
layer
discontinuous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010193964A
Other languages
Japanese (ja)
Other versions
JP2012054303A (en
JP5242643B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2010193964A priority Critical patent/JP5242643B2/en
Priority claimed from JP2010193964A external-priority patent/JP5242643B2/en
Priority to TW100129370A priority patent/TWI482290B/en
Priority to KR1020110087934A priority patent/KR101298789B1/en
Publication of JP2012054303A publication Critical patent/JP2012054303A/en
Publication of JP2012054303A5 publication Critical patent/JP2012054303A5/ja
Application granted granted Critical
Publication of JP5242643B2 publication Critical patent/JP5242643B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Description

なお、グラフェン層１４の表面（すなわち配線１０の側面）を覆う厚さ２ｎｍ程度の金属膜を形成してもよい。この金属膜を形成することにより、グラフェンが不連続な領域がグラフェン層１４に含まれる場合であっても、電気伝導を補うことができる。金属膜の材料として、Ａｕ、Ｐｄ、Ａｇ、Ｔａ、Ｇａ等のグラフェンと仕事関数が近い材料を用いることが好ましい。これら金属材料は、グラフェン上に成膜してもグラフェン層のディラック点を変化させることなく、グラフェン中を伝導するキャリアの移動速度を減少させることがない。   Note that a metal film having a thickness of about 2 nm may be formed to cover the surface of the graphene layer 14 (that is, the side surface of the wiring 10). By forming this metal film, even when the graphene layer 14 includes a region where graphene is discontinuous, electric conduction can be supplemented. As a material for the metal film, a material having a work function close to that of graphene such as Au, Pd, Ag, Ta, or Ga is preferably used. Even when these metal materials are formed on graphene, the Dirac point of the graphene layer is not changed, and the moving speed of carriers conducted in the graphene is not reduced.

JP2010193964A 2010-08-31 2010-08-31 Semiconductor device Active JP5242643B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010193964A JP5242643B2 (en) 2010-08-31 2010-08-31 Semiconductor device
TW100129370A TWI482290B (en) 2010-08-31 2011-08-17 Semiconductor device
KR1020110087934A KR101298789B1 (en) 2010-08-31 2011-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010193964A JP5242643B2 (en) 2010-08-31 2010-08-31 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2012054303A JP2012054303A (en) 2012-03-15
JP2012054303A5 true JP2012054303A5 (en) 2012-10-04
JP5242643B2 JP5242643B2 (en) 2013-07-24

Family

ID=45907356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010193964A Active JP5242643B2 (en) 2010-08-31 2010-08-31 Semiconductor device

Country Status (3)

Country Link
JP (1) JP5242643B2 (en)
KR (1) KR101298789B1 (en)
TW (1) TWI482290B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5150690B2 (en) * 2010-09-16 2013-02-20 株式会社東芝 Semiconductor device and manufacturing method of semiconductor device
JP5637795B2 (en) 2010-10-05 2014-12-10 株式会社東芝 apparatus
US9472450B2 (en) * 2012-05-10 2016-10-18 Samsung Electronics Co., Ltd. Graphene cap for copper interconnect structures
JP5755618B2 (en) 2012-09-06 2015-07-29 株式会社東芝 Semiconductor device
JP5851369B2 (en) 2012-09-10 2016-02-03 株式会社東芝 Manufacturing method of semiconductor device
JP5972735B2 (en) 2012-09-21 2016-08-17 株式会社東芝 Semiconductor device
KR101910579B1 (en) 2012-10-29 2018-10-22 삼성전자주식회사 Graphene switching device having tunable barrier
JP5813678B2 (en) 2013-02-15 2015-11-17 株式会社東芝 Semiconductor device
JP2015032662A (en) 2013-08-01 2015-02-16 株式会社東芝 Semiconductor device and manufacturing method of the same
JP6162555B2 (en) 2013-09-18 2017-07-12 株式会社東芝 Semiconductor device, superconducting device and manufacturing method thereof
JP2016063095A (en) 2014-09-18 2016-04-25 株式会社東芝 Wiring and manufacturing method of the same
JP2016063096A (en) 2014-09-18 2016-04-25 株式会社東芝 Graphene wiring and manufacturing method of the same
JP2016171245A (en) 2015-03-13 2016-09-23 株式会社東芝 Semiconductor device and manufacturing method thereof
JP2017050419A (en) 2015-09-02 2017-03-09 株式会社東芝 Semiconductor device and manufacturing method of the same
JP2017050503A (en) 2015-09-04 2017-03-09 株式会社東芝 Semiconductor device and manufacturing method of the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129577B2 (en) * 1993-06-11 2001-01-31 ローム株式会社 Wiring for semiconductor integrated circuit and method of forming the wiring
JP2006120730A (en) 2004-10-19 2006-05-11 Fujitsu Ltd Wiring structure using multilayered carbon nanotube for interlayer wiring, and its manufacturing method
US7732859B2 (en) * 2007-07-16 2010-06-08 International Business Machines Corporation Graphene-based transistor
KR101443222B1 (en) * 2007-09-18 2014-09-19 삼성전자주식회사 Graphene pattern and process for preparing the same
JP5353009B2 (en) * 2008-01-08 2013-11-27 富士通株式会社 Semiconductor device manufacturing method and semiconductor device
US7772059B2 (en) * 2008-01-16 2010-08-10 Texas Instruments Incorporated Method for fabricating graphene transistors on a silicon or SOI substrate
US8467224B2 (en) * 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
JP5470779B2 (en) * 2008-09-03 2014-04-16 富士通株式会社 Method for manufacturing integrated circuit device
JP5395542B2 (en) 2009-07-13 2014-01-22 株式会社東芝 Semiconductor device
KR101129930B1 (en) 2010-03-09 2012-03-27 주식회사 하이닉스반도체 Semiconductor device and method for forming the same

Similar Documents

Publication Publication Date Title
JP2012054303A5 (en)
JP2014096359A5 (en) Electrode material
JP2012523121A5 (en)
JP2010062547A5 (en) Semiconductor device
JP2014131025A5 (en)
JP2014179596A5 (en)
JP2010502458A5 (en)
JP2016515954A5 (en)
JP2015015458A5 (en) Semiconductor device
JP2013038399A5 (en) Semiconductor device
JP2011507712A5 (en)
JP2012524411A5 (en)
JP2011085923A5 (en) Method of manufacturing light emitting device
JP2014205915A5 (en)
JP2011507717A5 (en)
PH12015502250A1 (en) Release film for green sheet production
JP2013077836A5 (en)
JP2010056539A5 (en) Semiconductor device
JP2013042180A5 (en)
JP2011205089A5 (en) Method of manufacturing semiconductor film
JP2012183583A5 (en)
JP2014501295A5 (en)
JP2010103502A5 (en) Semiconductor device
WO2013103379A3 (en) N-metal film deposition with initiation layer
JP2014503783A5 (en)