JP2012044035A5 - - Google Patents
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- JP2012044035A5 JP2012044035A5 JP2010184889A JP2010184889A JP2012044035A5 JP 2012044035 A5 JP2012044035 A5 JP 2012044035A5 JP 2010184889 A JP2010184889 A JP 2010184889A JP 2010184889 A JP2010184889 A JP 2010184889A JP 2012044035 A5 JP2012044035 A5 JP 2012044035A5
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- Prior art keywords
- manufacturing apparatus
- semiconductor manufacturing
- frequency power
- chamber
- semiconductor
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Claims (10)
前記導波路と前記チャンバの間に配置され、パルス変調され前記導波路を介して伝送された高周波電力を前記チャンバに供給するアンテナ板をさらに備え、
前記アンテナ板は、前記半導体ウエハに対向し外周部にスロットを具備することを特徴とする半導体製造装置。 Comprising a chamber for plasma processing a semiconductor wafer, and a high-frequency power source supplying high frequency power to generate the flop plasma into the chamber through the waveguide, and control means for performing control to pulse modulation of the high-frequency power In semiconductor manufacturing equipment
An antenna plate disposed between the waveguide and the chamber, for supplying high-frequency power, which is pulse-modulated and transmitted through the waveguide, to the chamber;
The antenna manufacturing apparatus according to claim 1, wherein the antenna plate is opposed to the semiconductor wafer and has a slot on an outer periphery .
前記外周部は、前記半導体ウエハの半径の２分の１より外側の領域であることを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to claim 1 ,
The semiconductor manufacturing apparatus according to claim 1 , wherein the outer peripheral portion is a region outside a half of a radius of the semiconductor wafer.
前記導波路と前記チャンバの間に配置され、パルス変調され前記導波路を介して伝送された高周波電力を前記チャンバに供給する電力吸収体をさらに備え、
前記電力吸収体は、前記半導体ウエハに対向し前記チャンバの中央部に配置されていることを特徴とする半導体製造装置。 A semiconductor comprising a chamber for plasma processing a semiconductor wafer, a high-frequency power source for supplying high-frequency power for generating plasma to the chamber via a waveguide, and a control means for performing control for pulse-modulating the high-frequency power In manufacturing equipment,
A power absorber disposed between the waveguide and the chamber, and supplying a high frequency power pulse-modulated and transmitted through the waveguide to the chamber;
The power absorber, a semiconductor manufacturing apparatus characterized that you have placed in the center portion of the chamber opposite to the semiconductor wafer.
前記プラズマは、磁場と電子サイクロトロン共鳴を利用して生成されるものであることを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to any one of claims 1 to 3 ,
The semiconductor manufacturing apparatus, wherein the plasma is generated using a magnetic field and electron cyclotron resonance .
前記制御手段は、前記高周波電力をオンさせた後、生成されたプラズマが定常状態に至る前に前記高周波電力をオフさせる制御を行うことを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to any one of claims 1 to 4,
The semiconductor manufacturing apparatus according to claim 1, wherein the control unit performs control to turn off the high-frequency power after the high-frequency power is turned on and before the generated plasma reaches a steady state .
前記制御手段は、前記高周波電力をオフさせた後、プラズマ密度が定常時の２分の１以下に減少してから前記高周波電力をオンさせる制御を行うことを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to any one of claims 1 to 5,
The semiconductor manufacturing apparatus according to claim 1 , wherein after the high frequency power is turned off , the control means performs control to turn on the high frequency power after the plasma density is reduced to a half or less of a steady state .
前記パルス変調のオン期間は、１５０ｍｓより短いことを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to any one of claims 1 to 4 ,
The semiconductor manufacturing apparatus, wherein an ON period of the pulse modulation is shorter than 150 ms .
前記パルス変調のオフ期間は、９ｍｓより長いことを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to any one of claims 1 to 4 ,
Between the pulse modulation off period, a semiconductor manufacturing apparatus characterized by greater than 9 ms.
前記制御手段は、予め取得されたデータに基づいて前記高周波電力をオフさせる制御を行うことを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to claim 5 ,
The semiconductor manufacturing apparatus according to claim 1, wherein the control means performs control to turn off the high-frequency power based on data acquired in advance .
前記制御手段は、予め取得されたデータに基づいて前記高周波電力をオンさせる制御を行うことを特徴とする半導体製造装置。 The semiconductor manufacturing apparatus according to claim 6,
The control means, a semiconductor manufacturing device comprising a TURMERIC rows on makes controlling the high frequency power based on previously acquired data.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010184889A JP2012044035A (en) | 2010-08-20 | 2010-08-20 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010184889A JP2012044035A (en) | 2010-08-20 | 2010-08-20 | Semiconductor manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012044035A JP2012044035A (en) | 2012-03-01 |
| JP2012044035A5 true JP2012044035A5 (en) | 2013-09-05 |
Family
ID=45899990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010184889A Pending JP2012044035A (en) | 2010-08-20 | 2010-08-20 | Semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2012044035A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021220329A1 (en) * | 2020-04-27 | 2021-11-04 | 株式会社日立ハイテク | Plasma treatment device |
| CN116390320A (en) * | 2023-05-30 | 2023-07-04 | 安徽农业大学 | Electron cyclotron resonance discharge device and application |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH065386A (en) * | 1992-06-19 | 1994-01-14 | Kobe Steel Ltd | Electronic cyclotron resonance device |
| JPH09289099A (en) * | 1996-02-20 | 1997-11-04 | Hitachi Ltd | Plasma processing method and device |
| JP2000331998A (en) * | 1999-05-21 | 2000-11-30 | Hitachi Ltd | Plasma processing device |
| JP2005019346A (en) * | 2003-06-30 | 2005-01-20 | Tokyo Electron Ltd | Plasma treatment device, plasma radiation antenna used for this and wave guide |
| JP4718189B2 (en) * | 2005-01-07 | 2011-07-06 | 東京エレクトロン株式会社 | Plasma processing method |
| JP4864661B2 (en) * | 2006-11-22 | 2012-02-01 | 東京エレクトロン株式会社 | Solar cell manufacturing method and solar cell manufacturing apparatus |
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2010
- 2010-08-20 JP JP2010184889A patent/JP2012044035A/en active Pending
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