JP2020017565A5 - - Google Patents

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JP2020017565A5
JP2020017565A5 JP2018137722A JP2018137722A JP2020017565A5 JP 2020017565 A5 JP2020017565 A5 JP 2020017565A5 JP 2018137722 A JP2018137722 A JP 2018137722A JP 2018137722 A JP2018137722 A JP 2018137722A JP 2020017565 A5 JP2020017565 A5 JP 2020017565A5
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Prior art keywords
period
amplitude
pulse
processing apparatus
plasma processing
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JP2018137722A
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Japanese (ja)
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JP6976228B2 (en
JP2020017565A (en
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Priority claimed from JP2018137722A external-priority patent/JP6976228B2/en
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Claims (5)

試料がプラズマ処理される処理室と、プラズマを生成するための第1高周波電力を供給する第1高周波電源と、試料が載置される試料台と、前記試料台に第2高周波電力を供給する第2高周波電源とを備えるプラズマ処理装置において、
前記第1高周波電力をパルス変調するための第1パルスと前記第2高周波電力をパルス変調するための第2パルスを生成するパルス生成ユニットをさらに備え、
前記第1パルスは、オフ期間と第1期間と第2期間とを有し、
前記第1期間の振幅値は、有限の値であり、
前記第2期間の振幅は、前記第1期間の振幅より大きく、
前記第2パルスは、前記第2期間の間、オン期間となることを特徴とするプラズマ処理装置。
A processing chamber in which a sample is plasma-processed, a first high-frequency power source for supplying a first high-frequency power for generating plasma, a sample stage on which a sample is placed, and a second high-frequency power source for supplying the sample stage. In a plasma processing apparatus including a second high frequency power supply,
A pulse generation unit for generating a first pulse for pulse- modulating the first high-frequency power and a second pulse for pulse- modulating the second high-frequency power;
The first pulse has an off period, a first period, and a second period,
The amplitude value of the first period is a finite value,
The amplitude of the second period is larger than the amplitude of the first period,
It said second pulse, during the second period, the plasma processing apparatus characterized by comprising an on period.
請求項1に記載のプラズマ処理装置において、
前記第1期間は、第1振幅の期間である第1振幅期間と第2振幅の期間である第2振幅期間とを有し、
前記第1振幅は、前記第2振幅より小さいことを特徴とするプラズマ処理装置。
The plasma processing apparatus according to claim 1,
The first period has a first amplitude period which is a period of a first amplitude and a second amplitude period which is a period of a second amplitude,
The plasma processing apparatus is characterized in that the first amplitude is smaller than the second amplitude.
請求項1に記載のプラズマ処理装置において、
前記第1期間は、第1振幅の期間である第1振幅期間と第2振幅の期間である第2振幅期間とを有し、
前記第1振幅は、前記第2振幅より大きいことを特徴とするプラズマ処理装置。
The plasma processing apparatus according to claim 1,
The first period has a first amplitude period which is a period of a first amplitude and a second amplitude period which is a period of a second amplitude,
The plasma processing apparatus is characterized in that the first amplitude is larger than the second amplitude.
請求項1に記載のプラズマ処理装置において、
前記第1パルスは、所定の期間をさらに有し、
前記所定の期間は、前記第1パルスのオフ期間より前の期間であり、
前記第1期間は、前記第1パルスのオフ期間より後の期間であり、
前記所定の期間の振幅値は、有限の値であり、
前記第2期間の振幅は、前記所定の期間の振幅より大きいことを特徴とするプラズマ処理装置。
The plasma processing apparatus according to claim 1,
The first pulse further has a predetermined period,
The predetermined period is a period before the off period of the first pulse,
The first period is a period after the off period of the first pulse,
The amplitude value of the predetermined period is a finite value,
The plasma processing apparatus is characterized in that the amplitude of the second period is larger than the amplitude of the predetermined period.
請求項1ないし請求項4のいずれか一項に記載のプラズマ処理装置において、
前記パルス変調された第1高周波電力をモニタする検波器をさらに備え、
前記検波器は、少なくとも2つの検波器であることを特徴とするプラズマ処理装置。
The plasma processing apparatus according to any one of claims 1 to 4,
Further comprising a detector for monitoring the pulse- modulated first high-frequency power,
The detector is a plasma processing apparatus, characterized in that at least two detectors.
JP2018137722A 2018-07-23 2018-07-23 Plasma processing equipment Active JP6976228B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018137722A JP6976228B2 (en) 2018-07-23 2018-07-23 Plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018137722A JP6976228B2 (en) 2018-07-23 2018-07-23 Plasma processing equipment

Publications (3)

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JP2020017565A JP2020017565A (en) 2020-01-30
JP2020017565A5 true JP2020017565A5 (en) 2020-08-06
JP6976228B2 JP6976228B2 (en) 2021-12-08

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JP2018137722A Active JP6976228B2 (en) 2018-07-23 2018-07-23 Plasma processing equipment

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220027803A (en) 2020-08-27 2022-03-08 주식회사 히타치하이테크 plasma processing unit
JPWO2022259868A1 (en) * 2021-06-08 2022-12-15
KR20230169925A (en) 2022-06-07 2023-12-18 주식회사 히타치하이테크 plasma processing device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549901B1 (en) * 1997-08-22 2006-02-06 동경 엘렉트론 주식회사 Method for controlling plasma processor
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
WO2015056509A1 (en) * 2013-10-17 2015-04-23 株式会社日立国際電気 Method for controlling plasma-generating power source device

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