JP2012040708A - Dividing method - Google Patents

Dividing method Download PDF

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JP2012040708A
JP2012040708A JP2010182025A JP2010182025A JP2012040708A JP 2012040708 A JP2012040708 A JP 2012040708A JP 2010182025 A JP2010182025 A JP 2010182025A JP 2010182025 A JP2010182025 A JP 2010182025A JP 2012040708 A JP2012040708 A JP 2012040708A
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ceramic substrate
hole
holes
dividing
dividing method
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Yuji Hatano
雄二 波多野
Hiromi Ueno
寛海 上野
Kohei Matsumoto
航平 松本
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Disco Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a dividing method capable of cutting and dividing a ceramic substrate which is subjected to a hole-boring process and then is sintered, the dividing method cutting the sintered ceramic substrate along cutting-scheduled planes which connect between center axes of the bore holes with a high degree of accuracy.SOLUTION: The dividing method includes: a step of forming a protective film 10 on a surface of the ceramic substrate 1 subjected to the hole-boring process and the sintering process; a subsequent step of imaging the surface side with an imaging unit 30 to detect a coordinate position of each of the holes 3 and store the coordinate positions as hole position information; and a further step of determining and storing the center coordinates 3A of the holes 3 based on the hole position information. The dividing method further includes: a step of calculating a linear function which connects center coordinates 3A of the holes 3 adjoining each other, with a straight line; and a step of performing the irradiation with a laser beam LB so as to successively connects the center coordinates 3A of the holes 3 adjoining each other, based on the linear function to perform ablation working, thereby dividing the ceramic substrate 1 into chips 7.

Description

本発明は、セラミック基板等を複数に分割する方法に係り、特に、分割予定ラインに沿って複数の穴開け加工が施された後に焼結が行われたセラミック基板を、該穴を繋ぐように分割予定ラインに沿って分割する分割方法に関する。   The present invention relates to a method of dividing a ceramic substrate or the like into a plurality of pieces, and in particular, to connect a ceramic substrate that has been sintered after a plurality of holes have been drilled along a division line. The present invention relates to a dividing method of dividing along a planned dividing line.

半導体デバイス等の電子部品の製造分野においては、薄板状の基板等のワークをダイシングして多数のチップを得るにあたり、ワークに形成した分割予定ラインに沿って切削ブレードを切り込ませる切削加工が採用されている。通常の半導体ウェーハにおいては、切削すべき分割予定ラインと切削ブレードとを位置合わせするアライメントと呼ばれる作業を行ってから、アライメントされた分割予定ラインを切削し、その後は、分割予定ラインの間隔ずつ切削ブレードを割り出し送りして切削対象の分割予定ラインを選択しながら切削している。すなわち、アライメントは最初に切削する分割予定ラインについてのみ行い、その後は、事前に得ている分割予定ラインの間隔等のデータに基づいてダイシングを遂行している。したがって、全ての分割予定ラインが高精度で平行に形成されていることを前提として切削が行われる(特許文献1参照)。   In the field of manufacturing electronic components such as semiconductor devices, when dicing a workpiece such as a thin plate substrate to obtain a large number of chips, a cutting process is adopted in which a cutting blade is cut along the division lines formed on the workpiece. Has been. In a normal semiconductor wafer, an alignment process is performed to align the planned dividing line to be cut with the cutting blade, and then the aligned divided scheduled line is cut, and thereafter, cutting is performed at intervals of the planned dividing line. Cutting is performed while indexing and feeding the blade and selecting the division line to be cut. That is, the alignment is performed only on the planned division line to be cut first, and thereafter, dicing is performed based on data such as the interval of the predetermined division line obtained in advance. Therefore, cutting is performed on the assumption that all the division lines are formed in parallel with high accuracy (see Patent Document 1).

特開平6−69319号公報JP-A-6-69319

しかして、例えばセラミック基板等のワークの中には、後工程での組み立ての都合上、チップの角が切欠き形状になるようにダイシングすることが求められる場合がある。チップの角に切欠きを形成するには、ワークを焼結する前の段階で、分割予定ライン上のチップの角に該当する箇所に複数の穴を穿つ穴開け加工を施し、焼結後に分割予定ラインに沿ってワークを切断することによりなされる。   Thus, for example, a workpiece such as a ceramic substrate may be required to be diced so that the corners of the chip have a notch shape for the convenience of assembly in a later process. In order to form notches in the corners of the chip, before the workpiece is sintered, a hole is drilled at the location corresponding to the corner of the chip on the line to be divided, and then divided after sintering. This is done by cutting the workpiece along the planned line.

ところが、セラミック基板は焼結によって歪みが生じるため、焼結後の穴の位置は焼結前の位置からずれてしまうといった不都合が起こる。このため、従来のようにアライメントを行ってからワークを分割予定ラインに沿って切断しても、実際の切断ラインは穴と穴とを高精度に繋ぐようにはならず、適確にチップの角に切欠きを形成することができないという問題が生じていた。   However, since the ceramic substrate is distorted by sintering, there is a disadvantage that the position of the hole after sintering shifts from the position before sintering. For this reason, even if the workpiece is cut along the planned division line after alignment is performed as in the past, the actual cutting line does not connect the holes with high precision, and the chip is accurately aligned. There was a problem that notches could not be formed in the corners.

本発明は上記事情に鑑みてなされたものであり、その主な技術的課題は、穴開け加工が施された後に焼結が行われたセラミック基板に対して、穴の中心間を高精度に繋ぐように切断して分割することができる分割方法を提供することにある。   The present invention has been made in view of the above circumstances, and the main technical problem thereof is that the center of the hole is highly accurate with respect to the ceramic substrate that has been sintered after being subjected to drilling. An object of the present invention is to provide a dividing method that can be cut and divided so as to be connected.

本発明の分割方法は、分割予定ラインに沿って複数の穴開け加工が施された後に焼結が行われたセラミック基板を、該穴を繋ぐように分割予定ラインに沿って分割する分割方法であって、前記セラミック基板の被加工面に保護膜を形成する工程と、撮像手段の撮像範囲内に順次前記穴を位置付けて撮像することによって該穴の座標位置を検出して穴位置情報として記憶する工程と、前記穴位置情報に基づいて前記穴の中心座標を求めて記憶する工程と、隣り合う中心座標を直線で結ぶ一次関数を算出し、該一次関数に基づいて前記分割予定ラインに沿って並んだ前記穴の隣り合う中心座標を次々と繋ぐように該分割予定ラインに沿ってレーザビームを照射してアブレーション加工を施す工程と、を含むことを特徴とする。   The dividing method of the present invention is a dividing method of dividing a ceramic substrate, which has been sintered after being subjected to a plurality of perforations along the planned dividing line, along the planned dividing line so as to connect the holes. A step of forming a protective film on the surface to be processed of the ceramic substrate, and detecting the coordinate position of the holes by sequentially positioning and imaging the holes within the imaging range of the imaging means, and storing them as hole position information A step of calculating and storing the center coordinates of the hole based on the hole position information, and calculating a linear function connecting the adjacent center coordinates by a straight line, and along the division planned line based on the linear function And ablating by irradiating a laser beam along the planned dividing line so as to successively connect adjacent central coordinates of the holes arranged side by side.

本発明は、穴開け加工が施されて焼結されたセラミック基板の各穴について中心座標を求め、これら中心座標を繋ぐようにしてレーザビーム照射によるアブレーション加工でセラミック基板を切断、分割するものである。本発明によれば、焼結後の穴の中心座標に基づいて切断するため、穴の中心間を高精度で繋ぐようにして切断することができ、分割後に得られるチップの角には従来よりも均一な形状の切欠きが形成される。   The present invention obtains center coordinates for each hole of a ceramic substrate that has been drilled and sintered, and cuts and divides the ceramic substrate by ablation processing by laser beam irradiation so as to connect these center coordinates. is there. According to the present invention, since the cutting is performed based on the center coordinates of the hole after sintering, the center of the hole can be cut with high accuracy, and the tip corner obtained after the division can be cut conventionally. A notch with a uniform shape is also formed.

本発明によれば、穴開け加工が施された後に焼結が行われたセラミック基板に対して、穴の中心間を高精度に繋ぐように切断して分割することができる分割方法が提供されるといった効果を奏する。   ADVANTAGE OF THE INVENTION According to this invention, the division | segmentation method which can be cut | disconnected and divided | segmented so that between the centers of a hole may be provided with high precision is provided with respect to the ceramic board | substrate sintered after the drilling process was given. There is an effect such as.

本発明の一実施形態に係る分割方法で多数のチップに分割される穴開け加工されたセラミック基板の平面図である。It is a top view of the ceramic substrate by which the punching process divided | segmented into many chips | tips with the division | segmentation method which concerns on one Embodiment of this invention. セラミック基板から得るチップの平面図であって、(a)得ようとする形状のチップ、(b)従来で得られていたチップである。It is a top view of the chip | tip obtained from a ceramic substrate, Comprising: (a) The chip | tip of the shape which is going to be obtained, (b) The chip | tip conventionally obtained. 図1のIII部分の拡大図である。It is an enlarged view of the III part of FIG. セラミック基板の表面(被加工面)に保護膜を形成した状態を示す一部断面側面図である。It is a partial cross section side view which shows the state in which the protective film was formed in the surface (processed surface) of a ceramic substrate. 撮像手段でセラミック基板の表面を撮像する工程を示す側面図である。It is a side view which shows the process of imaging the surface of a ceramic substrate with an imaging means. 隣り合う穴の中心座標を繋ぐ実際の分割ラインを示す図である。It is a figure which shows the actual division line which connects the center coordinate of an adjacent hole. セラミック基板の穴の中心座標を示す図である。It is a figure which shows the center coordinate of the hole of a ceramic substrate. レーザビーム照射によるアブレーション加工でセラミック基板を分割する工程を示す側面図である。It is a side view which shows the process of dividing | segmenting a ceramic substrate by the ablation process by laser beam irradiation. 一実施形態の分割方法で得られたチップの平面図である。It is a top view of the chip | tip obtained with the division | segmentation method of one Embodiment.

以下、図面を参照して本発明の一実施形態を説明する。
図1は、一実施形態の分割方法を適用して多数のチップに分割される正方形状のセラミック基板を示している。このセラミック基板1は、まず、格子状の分割予定ライン2に沿って等間隔おきに多数の穴3を形成する穴開け加工が施され、この後に焼結することにより得られている。セラミック基板1は分割予定ライン2に沿って切断、分割されて、図2(a)に示すチップ5に個片化される。同図に示すチップ5は、正方形の四隅の角に、穴3によって1/4円弧状の切欠き6が形成されており、セラミック基板1から得ようとする理想形状のものである。
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 shows a square ceramic substrate that is divided into a large number of chips by applying the dividing method according to an embodiment. The ceramic substrate 1 is obtained by first performing a drilling process for forming a large number of holes 3 at equal intervals along a grid-like division planned line 2 and thereafter sintering. The ceramic substrate 1 is cut and divided along the division line 2 and divided into chips 5 shown in FIG. The chip 5 shown in FIG. 1 has an ideal shape to be obtained from the ceramic substrate 1 by forming quarter-arc cutouts 6 at the corners of a square by holes 3.

ところが、セラミック基板1は穴開け加工後の焼結により歪みが生じているため、図3に示すように穴3は当初の分割予定ライン2からずれているものがある。したがって分割予定ライン2に沿って分割して得られるチップ5は、実際には図2(b)に示すように角の切欠き6が均一な1/4円弧状にはならず、角の形状にばらつきがある。   However, since the ceramic substrate 1 is distorted by the sintering after drilling, the holes 3 may be displaced from the original division line 2 as shown in FIG. Accordingly, the chip 5 obtained by dividing along the planned dividing line 2 does not actually have a uniform quarter arc shape with the corner notches 6 as shown in FIG. There are variations.

そこで一実施形態の分割方法は、分割して得られる全てのチップ5の角の切欠き6が、従来よりも均一な1/4円弧状になる方法である。以下、その手順を説明する。   Therefore, the division method according to one embodiment is a method in which the corner notches 6 of all the chips 5 obtained by the division are formed into a uniform 1/4 arc shape as compared with the prior art. The procedure will be described below.

はじめに、図4に示すように、セラミック基板1の表面(被加工面、図4で上面)に保護膜10を形成する。保護膜10は、例えば液状の水溶性樹脂をセラミック基板1の表面に塗布することで形成することができる。該水溶性樹脂としては、例えばポリビニルアルコール(PVA)、ポリエチレングリコール(PEG)、ポリエチレンオキシド(PEO)等の水溶性レジストが挙げられる。また、該樹脂の塗布方法としては、自転させたセラミック基板1の表面の回転中心に滴下した樹脂を遠心力で表面全面に行き渡らせるスピンコート法等が採用される。   First, as shown in FIG. 4, a protective film 10 is formed on the surface of the ceramic substrate 1 (the surface to be processed, the upper surface in FIG. 4). The protective film 10 can be formed, for example, by applying a liquid water-soluble resin to the surface of the ceramic substrate 1. Examples of the water-soluble resin include water-soluble resists such as polyvinyl alcohol (PVA), polyethylene glycol (PEG), and polyethylene oxide (PEO). In addition, as a method for applying the resin, a spin coating method or the like in which the resin dripped at the rotation center of the surface of the rotated ceramic substrate 1 is spread over the entire surface by centrifugal force is used.

次いで、図5に示すように、保護膜10側を上にしてセラミック基板1を適宜な保持テーブル20上に水平に保持する。そして、保持テーブル20の上方に配置した撮像手段30と保持テーブル20とを水平方向に相対移動させて撮像手段30の撮像範囲内に順次穴3を位置付け、全ての穴3を撮像する。なお、保護膜10は厚さが例えば数百μm〜数μm程度であり、保護膜10が穴3を覆った状態であっても、穴3は表面側から撮像可能である。この時、撮像した各穴3について随時穴3の座標位置を検出し、該座標位置を穴位置情報として図示せぬ記憶手段に記憶させる。図6は、撮像手段30の撮像範囲の一例を示しており、各穴3はこのように撮像されて座標位置が検出される。   Next, as shown in FIG. 5, the ceramic substrate 1 is horizontally held on a suitable holding table 20 with the protective film 10 side facing up. Then, the imaging means 30 and the holding table 20 arranged above the holding table 20 are relatively moved in the horizontal direction so that the holes 3 are sequentially positioned within the imaging range of the imaging means 30 and all the holes 3 are imaged. The protective film 10 has a thickness of, for example, about several hundred μm to several μm. Even when the protective film 10 covers the hole 3, the hole 3 can be imaged from the surface side. At this time, the coordinate position of the hole 3 is detected at any time for each imaged hole 3, and the coordinate position is stored in a storage means (not shown) as hole position information. FIG. 6 shows an example of the imaging range of the imaging means 30. Each hole 3 is imaged in this way, and the coordinate position is detected.

次いで、得られた穴位置情報に基づいて、全ての穴3の中心座標(図7の3Aで示す)を求め、上記記憶手段に記憶させる。   Next, based on the obtained hole position information, the center coordinates (indicated by 3A in FIG. 7) of all the holes 3 are obtained and stored in the storage means.

次いで、隣り合う穴3の中心座標3Aを直線で結ぶ一次関数を、全ての隣り合う穴3の間に関して算出する。そして、求めたこれら一次関数に基づいて、並んだ穴3における隣り合う中心座標3Aを次々と繋ぐようにして、穴3間をレーザ加工により切断していく。   Next, a linear function that connects the central coordinates 3 </ b> A of the adjacent holes 3 with a straight line is calculated for all the adjacent holes 3. Then, based on these obtained linear functions, the adjacent center coordinates 3A of the aligned holes 3 are connected one after another, and the holes 3 are cut by laser processing.

この場合、図8に示すように、保持テーブル20の上方に配置したレーザビーム照射手段40と保持テーブル20とを水平方向に相対移動させながら、レーザビーム照射手段40からセラミック基板1に焦点を合わせてレーザビームLBを照射し、セラミック基板1の成分を溶融・蒸散させて除去するアブレーション加工により、セラミック基板1を切断する。図6の破線は穴3の中心座標3A間を繋ぐようにして照射されるレーザビームLBの走査ラインであり、これはすなわち実際の分割ラインである。   In this case, as shown in FIG. 8, the laser beam irradiation means 40 and the holding table 20 disposed above the holding table 20 are moved relative to each other in the horizontal direction, and the laser substrate irradiation means 40 focuses on the ceramic substrate 1. Then, the ceramic substrate 1 is cut by an ablation process in which the components of the ceramic substrate 1 are melted and evaporated to be removed by irradiation with the laser beam LB. A broken line in FIG. 6 is a scanning line of the laser beam LB irradiated so as to connect the center coordinates 3A of the hole 3, which is an actual dividing line.

アブレーション加工を行うと、蒸散した成分が周囲に飛散して凝固し付着するデブリが発生する場合がある。しかしながら本実施形態ではセラミック基板1の表面に保護膜10を形成しているため、発生したデブリは保護膜10の表面に付着する。このため、セラミック基板1の汚染が防止され、結果としてチップの品質が保持される。   When ablation processing is performed, debris may be generated in which evaporated components are scattered and solidified. However, since the protective film 10 is formed on the surface of the ceramic substrate 1 in this embodiment, the generated debris adheres to the surface of the protective film 10. For this reason, contamination of the ceramic substrate 1 is prevented, and as a result, the quality of the chip is maintained.

上記のようにしてレーザビームLBによるアブレーション加工が穴3と穴3との間に順次なされ、これによってセラミック基板1は多数のチップ7(図9参照)に分割される。本実施形態の分割方法によれば、セラミック基板1を焼結した後に位置がずれてしまっている各穴3の中心座標3Aを求め、これら中心座標3Aを直線的に繋ぐようにして穴3の間ごとにレーザビームLBを照射して切断している。このため、隣接する穴3の中心間を高精度で切断することができ、結果として、図9に示すように分割後に得られるチップ7の角には従来よりも均一な1/4円弧状の切欠き8が形成される。   As described above, the ablation processing by the laser beam LB is sequentially performed between the holes 3 and 3, thereby dividing the ceramic substrate 1 into a large number of chips 7 (see FIG. 9). According to the dividing method of the present embodiment, the center coordinates 3A of the holes 3 whose positions are shifted after the ceramic substrate 1 is sintered are obtained, and the center coordinates 3A are linearly connected to each other. The laser beam LB is irradiated at intervals and cut. For this reason, it is possible to cut between the centers of the adjacent holes 3 with high accuracy. As a result, as shown in FIG. 9, the corner of the chip 7 obtained after the division has a 1/4 arc shape which is more uniform than the conventional one. A notch 8 is formed.

1…セラミック基板
2…分割予定ライン
3…穴
3A…穴の中心座標
10…保護膜
30…撮像手段
LB…レーザビーム
DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Planned division line 3 ... Hole 3A ... Center coordinate 10 of hole ... Protective film 30 ... Imaging means LB ... Laser beam

Claims (1)

分割予定ラインに沿って複数の穴開け加工が施された後に焼結が行われたセラミック基板1を、該穴を繋ぐように分割予定ラインに沿って分割する分割方法であって、
前記セラミック基板の被加工面に保護膜を形成する工程と、
撮像手段の撮像範囲内に順次前記穴を位置付けて撮像することによって該穴の座標位置を検出して穴位置情報として記憶する工程と、
前記穴位置情報に基づいて前記穴の中心座標を求めて記憶する工程と、
隣り合う中心座標を直線で結ぶ一次関数を算出し、該一次関数に基づいて前記分割予定ラインに沿って並んだ前記穴の隣り合う中心座標を次々と繋ぐように該分割予定ラインに沿ってレーザビームを照射してアブレーション加工を施す工程と、
を含むことを特徴とする分割方法。
A dividing method of dividing a ceramic substrate 1 that has been sintered after being subjected to a plurality of drilling processes along a division line, along the division line so as to connect the holes,
Forming a protective film on the work surface of the ceramic substrate;
Detecting the coordinate position of the hole by sequentially positioning and imaging the hole within the imaging range of the imaging means, and storing it as hole position information;
Obtaining and storing center coordinates of the hole based on the hole position information;
A linear function that connects adjacent central coordinates with a straight line is calculated, and a laser is generated along the planned division line so that adjacent central coordinates of the holes arranged along the planned division line are connected one after another based on the linear function. A process of ablating by irradiating a beam;
A dividing method characterized by including:
JP2010182025A 2010-08-17 2010-08-17 Dividing method Pending JP2012040708A (en)

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CN106181024A (en) * 2016-08-25 2016-12-07 关键应用科技股份有限公司 Radium-shine bearing calibration
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CN104259503A (en) * 2014-08-26 2015-01-07 中国直升机设计研究所 Large cellular board machining method
CN106181024A (en) * 2016-08-25 2016-12-07 关键应用科技股份有限公司 Radium-shine bearing calibration
CN110102843A (en) * 2018-02-01 2019-08-09 发那科株式会社 The control method of wire electric discharge machine and wire electric discharge machine
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