JP2012028476A5 - - Google Patents

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Publication number
JP2012028476A5
JP2012028476A5 JP2010164409A JP2010164409A JP2012028476A5 JP 2012028476 A5 JP2012028476 A5 JP 2012028476A5 JP 2010164409 A JP2010164409 A JP 2010164409A JP 2010164409 A JP2010164409 A JP 2010164409A JP 2012028476 A5 JP2012028476 A5 JP 2012028476A5
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JP
Japan
Prior art keywords
layer
thickness
superlattice structure
ingan
well layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010164409A
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English (en)
Japanese (ja)
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JP2012028476A (ja
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Publication date
Application filed filed Critical
Priority to JP2010164409A priority Critical patent/JP2012028476A/ja
Priority claimed from JP2010164409A external-priority patent/JP2012028476A/ja
Publication of JP2012028476A publication Critical patent/JP2012028476A/ja
Publication of JP2012028476A5 publication Critical patent/JP2012028476A5/ja
Pending legal-status Critical Current

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JP2010164409A 2010-07-22 2010-07-22 発光装置の製造方法 Pending JP2012028476A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010164409A JP2012028476A (ja) 2010-07-22 2010-07-22 発光装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010164409A JP2012028476A (ja) 2010-07-22 2010-07-22 発光装置の製造方法

Publications (2)

Publication Number Publication Date
JP2012028476A JP2012028476A (ja) 2012-02-09
JP2012028476A5 true JP2012028476A5 (OSRAM) 2013-06-20

Family

ID=45781074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010164409A Pending JP2012028476A (ja) 2010-07-22 2010-07-22 発光装置の製造方法

Country Status (1)

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JP (1) JP2012028476A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5510183B2 (ja) * 2010-08-19 2014-06-04 日亜化学工業株式会社 窒化物半導体発光素子
JP6026116B2 (ja) * 2012-03-09 2016-11-16 シャープ株式会社 窒化物半導体発光素子およびその製造方法
US9620671B2 (en) * 2012-06-13 2017-04-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing same
JP2014146684A (ja) * 2013-01-29 2014-08-14 Stanley Electric Co Ltd 半導体発光素子及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3622562B2 (ja) * 1998-03-12 2005-02-23 日亜化学工業株式会社 窒化物半導体発光ダイオード
US6635904B2 (en) * 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
KR100674862B1 (ko) * 2005-08-25 2007-01-29 삼성전기주식회사 질화물 반도체 발광 소자
JP2007019526A (ja) * 2006-08-11 2007-01-25 Rohm Co Ltd 窒化物半導体素子の製法

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