JP2012028476A5 - - Google Patents
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- JP2012028476A5 JP2012028476A5 JP2010164409A JP2010164409A JP2012028476A5 JP 2012028476 A5 JP2012028476 A5 JP 2012028476A5 JP 2010164409 A JP2010164409 A JP 2010164409A JP 2010164409 A JP2010164409 A JP 2010164409A JP 2012028476 A5 JP2012028476 A5 JP 2012028476A5
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- layer
- thickness
- superlattice structure
- ingan
- well layer
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Claims (5)
前記ｎ側コンタクト層と前記活性層との間には、前記ｎ側コンタクト層側から順に、ＧａＮ又はＩｎＧａＮからなる第１障壁層及びＩｎＧａＮからなる第１井戸層を含む第１超格子構造体と、ＧａＮ又はＩｎＧａＮからなる第２障壁層及びＩｎＧａＮからなる第２井戸層を含む第２超格子構造体と、が設けられ、
前記第２超格子構造体の平均Ｉｎ混晶比は、前記第１超格子構造体の平均Ｉｎ混晶比よりも小さいことを特徴とする半導体発光素子。 A semiconductor light emitting device comprising an n-side contact layer, an active layer, and a p-side contact layer in order,
A first superlattice structure including a first barrier layer made of GaN or InGaN and a first well layer made of InGaN in order from the n-side contact layer side between the n-side contact layer and the active layer; A second superlattice structure including a second barrier layer made of GaN or InGaN and a second well layer made of InGaN, and
An average In mixed crystal ratio of the second superlattice structure is smaller than an average In mixed crystal ratio of the first superlattice structure .
前記第１井戸層の膜厚と前記第２井戸層の膜厚とは実質的に同じであると共に、前記第１障壁層の膜厚と前記第２障壁層の膜厚とは実質的に同じであり、
前記第２井戸層のＩｎ混晶比は、前記第１井戸層のＩｎ混晶比よりも小さいことを特徴とする請求項１に記載の半導体発光素子。 Between the n-side contact layer and the active layer, in order from the n-side contact layer side, a first superlattice structure including a first barrier layer made of GaN and a first well layer made of InGaN, and GaN A second superlattice structure including a second barrier layer made of and a second well layer made of InGaN,
The thickness of the first well layer and the thickness of the second well layer are substantially the same, and the thickness of the first barrier layer and the thickness of the second barrier layer are substantially the same. And
2. The semiconductor light emitting device according to claim 1, wherein an In mixed crystal ratio of the second well layer is smaller than an In mixed crystal ratio of the first well layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010164409A JP2012028476A (en) | 2010-07-22 | 2010-07-22 | Method for manufacturing light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010164409A JP2012028476A (en) | 2010-07-22 | 2010-07-22 | Method for manufacturing light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012028476A JP2012028476A (en) | 2012-02-09 |
| JP2012028476A5 true JP2012028476A5 (en) | 2013-06-20 |
Family
ID=45781074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010164409A Pending JP2012028476A (en) | 2010-07-22 | 2010-07-22 | Method for manufacturing light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2012028476A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5510183B2 (en) * | 2010-08-19 | 2014-06-04 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
| JP6026116B2 (en) * | 2012-03-09 | 2016-11-16 | シャープ株式会社 | Nitride semiconductor light emitting device and manufacturing method thereof |
| WO2013187171A1 (en) * | 2012-06-13 | 2013-12-19 | シャープ株式会社 | Nitride semiconductor light emitting element and method for manufacturing same |
| JP2014146684A (en) * | 2013-01-29 | 2014-08-14 | Stanley Electric Co Ltd | Semiconductor light-emitting element and manufacturing method of the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3622562B2 (en) * | 1998-03-12 | 2005-02-23 | 日亜化学工業株式会社 | Nitride semiconductor light emitting diode |
| US6635904B2 (en) * | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
| KR100674862B1 (en) * | 2005-08-25 | 2007-01-29 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
| JP2007019526A (en) * | 2006-08-11 | 2007-01-25 | Rohm Co Ltd | Process for fabricating nitride semiconductor element |
-
2010
- 2010-07-22 JP JP2010164409A patent/JP2012028476A/en active Pending
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