JP2012015516A - Bonding contact on semiconductor substrate - Google Patents

Bonding contact on semiconductor substrate Download PDF

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JP2012015516A
JP2012015516A JP2011145282A JP2011145282A JP2012015516A JP 2012015516 A JP2012015516 A JP 2012015516A JP 2011145282 A JP2011145282 A JP 2011145282A JP 2011145282 A JP2011145282 A JP 2011145282A JP 2012015516 A JP2012015516 A JP 2012015516A
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bonding
metal layer
layer
contact
bonding contact
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JP5550606B2 (en
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Zimmer Hans-Gunter
ツィマー ハンス−ギュンター
Stumpf Pascal
シュトゥンプフ パスカル
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TDK Micronas GmbH
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Abstract

PROBLEM TO BE SOLVED: To provide a bonding contact with high reliability in compatibility especially with copper bonding.SOLUTION: A bonding contact, which is on a semiconductor substrate and has a reinforcement structure body, includes: at least one first metal layer disposed on the semiconductor substrate; and a third metal layer disposed above the first metal layer. In the first metal layer, a reinforcement structure body with a pattern is stored. The third metal layer is a bonding contact layer with a bonding face. Further, an insulation layer is disposed below the bonding face and above the first metal layer. This insulation layer protrudes beyond an edge part of the bonding face. In a bonding portion (1), the reinforcement structure body is configured within the first metal layer below this bonding face, when viewed from the top of the bonding face. This reinforcement structure body includes inductor lands.

Description

本発明は、請求項１の上位概念に記載した、半導体基板上の補強構造を有するボンディングコンタクトに関する。   The present invention relates to a bonding contact having a reinforcing structure on a semiconductor substrate according to the superordinate concept of claim 1.

ボンディングコンタクトはふつう、複数の誘電体、コンタクト面およびメタライゼーション面からなる積層体から構成される。ボンディング面（ボンディングパッド）と称される最上位層は、いわゆるボンディングにより、「パッケージ」の薄いワイヤに電気的に結び付けられる。   Bonding contacts are usually composed of a stack of dielectrics, contact surfaces and metallization surfaces. The top layer, referred to as the bonding surface (bonding pad), is electrically bonded to the thin wire of the “package” by so-called bonding.

公知であるのは、ボンディングプロセス中、ボンディングキャピラリ先端部によってボンディングコンタクトに及ぼされる機械的負荷および超音波圧力により、その下にある誘電体の破壊にまでつながる亀裂が形成され、その下にある複数の金属構造体が変形され、またこれらの金属構造体の層が剥離するという事態が発生し得ることである。このようなボンディング欠陥は、ボンディングコンタクトおよびその下にある複数の層におけるクレータとして形成されることがあり、またふつうボンディング中に視認することができず、引き続いて行われる引っ張りテストまたは剪断テストまたは信頼性テスト中にはじめて明らかになるのである。   It is known that during the bonding process, the mechanical load and ultrasonic pressure exerted on the bonding contact by the tip of the bonding capillary creates a crack that leads to the breakdown of the underlying dielectric, and the underlying multiple The metal structures may be deformed and the layers of these metal structures may be peeled off. Such bonding defects may be formed as craters in the bonding contact and the layers below it, and are usually not visible during bonding and are subsequently subjected to tensile or shear tests or reliability. It is only revealed during the sex test.

これらの問題は、３層メタライゼーション、ＣＭＰ平坦化（化学的機械的平坦化）および金のボンディングワイヤを銅のボンディングワイヤに交換するなどの新しいプロセスオプションによってさらに深刻化している。   These problems are exacerbated by new process options such as three-layer metallization, CMP planarization (chemical mechanical planarization), and replacement of gold bonding wires with copper bonding wires.

したがってボンディングコンタクトの機械的特性を改善するため、ラテラル方向に均一または周期的に補強構造体を設けることが公知である。   Therefore, it is known to provide reinforcing structures uniformly or periodically in the lateral direction in order to improve the mechanical properties of the bonding contacts.

EP 0 875 934 B1には少なくとも１つの誘電体層を有するボンディングコンタクトが記載されており、この層は、パターンの付いた補強構造体を有しており、この補強構造体は、互いに接続されかつ例えば格子状に配置されたメタライゼーション線路からなる。   EP 0 875 934 B1 describes a bonding contact having at least one dielectric layer, which layer has a patterned reinforcing structure, which is connected to each other and For example, it consists of metallization lines arranged in a grid.

EP 0 875 934 B1EP 0 875 934 B1

本発明の課題は、改善された特性を備えた冒頭に述べた形式のボンディングコンタクト、殊に銅ボンディングとの両立性の点で高い信頼性を有するボンディングコンタクトを提供することであり、この銅ボンディングでは、エネルギ吸収度が高いことによって起因してボンディングの際にも、また作動温度が高い場合にもボンディングパッドのロバストかつ均一な特性が要求されるのである。   The object of the present invention is to provide a bonding contact of the type mentioned at the beginning with improved characteristics, in particular a bonding contact having high reliability in terms of compatibility with copper bonding. Then, due to the high energy absorption, robust and uniform characteristics of the bonding pad are required both during bonding and when the operating temperature is high.

上記の課題は、請求項１の記載された特徴的構成を有するボンディングコンタクトによって解決される。   The above problem is solved by a bonding contact having the characteristic configuration described in claim 1.

本発明によるボンディングコンタクトの第１実施例の断面図である。1 is a cross-sectional view of a first embodiment of a bonding contact according to the present invention. 図１のボンディングコンタクトの補強構造体を上から見た断面図である。It is sectional drawing which looked at the reinforcement structure of the bonding contact of FIG. 1 from the top. 本発明によるボンディングコンタクトの第２実施例の断面図である。It is sectional drawing of 2nd Example of the bonding contact by this invention.

本発明によるボンディングコンタクトはつぎのように構成されている。すなわち、補強構造体を有する半導体基板上に、半導体基板に配置された少なくとも１つの第１金属層と、半導体基板上の、補強構造体を有する半導体基板上に、この半導体基板上に配置される少なくとも１つの第１金属層と、第１金属層の上方に配置された第３金属層とを有しており、上記の第１金属層は、パターンを有する補強構造体を収容するためのものであり、上記の第３金属層は、ボンディング面（ボンディングパッド）を有するボンディングコンタクト層であり、上記のボンディング面の下方および第１金属層の上方に絶縁層が配置されており、この絶縁層は、ボンディング面の縁部を越えて突き出ており、上記の補強構造体は、上側からボンディング面を見た場合、ボンディング面の下方において上記の第１金属層の内側に構成されており、上記の補強構造体には誘電体島が含まれている。   The bonding contact according to the present invention is configured as follows. That is, on a semiconductor substrate having a reinforcing structure, on the semiconductor substrate having at least one first metal layer disposed on the semiconductor substrate and on the semiconductor substrate having the reinforcing structure on the semiconductor substrate. It has at least one first metal layer and a third metal layer disposed above the first metal layer, and the first metal layer is for accommodating a reinforcing structure having a pattern. The third metal layer is a bonding contact layer having a bonding surface (bonding pad), and an insulating layer is disposed below the bonding surface and above the first metal layer. Protrudes beyond the edge of the bonding surface, and when the bonding surface is viewed from above, the reinforcing structure is formed below the bonding surface and inside the first metal layer. It is, in reinforcing structure described above contains dielectric islands.

補強構造体を有する半導体基板上のこのようなボンディングコンタクトは、本発明による１発展形態によればつぎのような特徴を有する。ここで上記の補強構造体は、パターンを有する補強構造体を収容するための、半導体基板に配置される少なくとも１つの導電性材料層と、金属層とを含んでおり、この金属層は、ボンディング面（ボンディングパッド）を有するボンディングコンタクト層として構成されかつ上記の導電性材料層に配置される。
− 上記の補強構造体は、規則的に配置される第１形状の島および第２形状の島から構成され、
− 第１形状の島は格子状に配置されており、
− 格子点を構成しかつ隣接する４つの第１形状の島の間にそれぞれ第２形状の島が配置されており、
− 第２形状の島は、格子状の構造を構成する。 Such a bonding contact on a semiconductor substrate having a reinforcing structure has the following characteristics according to one development of the invention. Here, the reinforcing structure includes at least one conductive material layer disposed on the semiconductor substrate for accommodating the reinforcing structure having a pattern, and a metal layer. It is configured as a bonding contact layer having a surface (bonding pad) and is disposed on the conductive material layer.
-The reinforcing structure is composed of islands of a first shape and islands of a second shape regularly arranged;
-The first shape islands are arranged in a grid,
-Each of the islands of the second shape is arranged between the four islands of the first shape that constitute the lattice points and are adjacent to each other;
-The second shape islands constitute a lattice-like structure.

本発明のように構造化された導電性材料層、有利にはアルミニウムまたは銅のような金属を使用すれば、ボンディングコンタクトの良好な機械的の特性が得られるため、ボンディングの際の力を一層良好に受け止めることができ、これによって基板までに至る亀裂の形成が抑止されるか、または少なくとも最小化される。   The use of a structured conductive material layer as in the present invention, preferably a metal such as aluminum or copper, provides good mechanical properties of the bonding contact, thus further increasing the bonding force. It can be well received, thereby preventing or at least minimizing the formation of cracks down to the substrate.

本発明の有利な１発展形態にしたがって中央に配置された補強構造体をフレーム状に包囲することにより、有利にも、このフレーム状に包囲された領域において、少なくとも１つの誘電体層に配置される貫通コンタクト部（ヴィア）を介して、ボンディングコンタクト層との電気的な接触接続を形成することができる。これにより、機械的には不利ではあるが導電性材料層の電気的な接続に必要なこのような貫通コンタクト部が、上記のボンディングによって機械的に負荷のかかるボンディング−パッド領域の外側で実現される。上記のヴィアを収容する誘電体層も、ボンディングパッドの下側の領域には、このような貫通コンタクト部を有しない。これにより、このようなボンディングコンタクトは殊に自動車における適用に有利である。それは上記の補強構造体の領域においては、アクティブな電子構成素子が、その下の半導体基板に実現されることがないからである。   By surrounding the centrally arranged reinforcing structure in a frame according to an advantageous development of the invention, it is advantageously arranged in at least one dielectric layer in this frame-enclosed region. An electrical contact connection with the bonding contact layer can be formed through the through contact portion (via). As a result, such a through contact portion, which is mechanically disadvantageous but necessary for the electrical connection of the conductive material layer, is realized outside the bonding-pad area which is mechanically loaded by the bonding described above. The The dielectric layer that accommodates the via does not have such a through contact portion in the lower region of the bonding pad. Thereby, such a bonding contact is particularly advantageous for applications in automobiles. This is because in the region of the reinforcing structure, no active electronic component is realized on the underlying semiconductor substrate.

本発明による別の１実施形態の特徴は、
− 上記の補強構造体が、規則的に配置される島からなるパターンを有し、
− 上記の導電性材料層は、補強構造体をフレーム状に包囲し、
− 上記の導電性材料層は、縁部領域にて、少なくとも１つの誘電体層に配置される貫通コンタクト部を介して上記のボンディングコンタクト層に電気的に接続される。 A feature of another embodiment according to the invention is:
The reinforcing structure has a pattern of regularly arranged islands;
-The above conductive material layer surrounds the reinforcing structure in a frame shape;
The conductive material layer is electrically connected to the bonding contact layer in the edge region via a through contact portion arranged in at least one dielectric layer;

これにより、機械的には不利ではあるが導電性材料層の電気的な接続には必要なこのような所要の貫通コンタクト部が、上記のボンディングによって機械的に負荷のかかるボンディング−パッド領域の外側で実現される。上記のヴィアを収容する誘電体層も、ボンディングパッドの下側の領域にはこのような貫通コンタクト部を有しない。これにより、このようなボンディングコンタクトは殊に自動車における適用に有利である。それは上記の補強構造体の領域においては、アクティブな電子構成素子が、その下にある半導体基板に実現されることはないからである。   As a result, the required through-contact portion, which is mechanically disadvantageous but necessary for the electrical connection of the conductive material layer, is outside the bonding-pad area which is mechanically loaded by the bonding described above. It is realized with. The dielectric layer for accommodating the via does not have such a through contact portion in the lower region of the bonding pad. Thereby, such a bonding contact is particularly advantageous for applications in automobiles. This is because, in the region of the reinforcing structure, no active electronic component is realized on the underlying semiconductor substrate.

本発明の発展形態によれば、上記の２つの解決手段において、島は第１形状および第２形状で構成され、ここで第１形状の島は格子状に配置され、また格子点を構成しかつ隣接するこれらの４つの第１形状の島の間にそれぞれ第２形状の島が配置され、これらの第２形状の島も同様に格子状の構造体を構成する。   According to the development form of the present invention, in the above two solutions, the islands are configured in the first shape and the second shape, where the islands in the first shape are arranged in a lattice shape and also constitute lattice points. In addition, second-shaped islands are arranged between these four adjacent first-shaped islands, and these second-shaped islands similarly form a lattice-like structure.

本発明の１発展形態において第１形状の島は、導電性材料層の面において正方形または矩形の断面を有しているため、このような島は簡単に作製可能である。それは、この場合には相応する構造体が、多重に回転対称だからである。   In one development of the invention, the first shaped island has a square or rectangular cross section in the plane of the conductive material layer, so that such an island can be easily produced. This is because in this case the corresponding structure is multiply rotationally symmetric.

本発明の別の１実施形態において上記の第２形状の島は、導電性材料層の面において十字形の断面を有しており、これによって同様に格子状の、多重に回転対称な構造を構成するため、これによって生じる補強構造体のパターンも多重に回転対称になるのである。ここで殊に有利であることは判明したのは、上記の導電性材料層の面において、隣接し合う第２形状の境界部と、第１形状の島と第２形状の島との境界部とが同じ間隔を有する場合である。これにより、有利には誘電体から作製される上記の補強構造体のパターンの領域において、すなわちこの補強構造体を収容する材料層の中央領域において、誘電体の割合は、導電性材料層の材料の割合よりも大きくなるのである。   In another embodiment of the present invention, the above-mentioned second shape island has a cross-shaped cross section on the surface of the conductive material layer, thereby forming a lattice-like, multiple rotationally symmetric structure as well. Because of the construction, the resulting reinforcing structure pattern is also rotationally symmetric. It has been found to be particularly advantageous here that, in the plane of the conductive material layer, the boundary between the adjacent second shape and the boundary between the first shape island and the second shape island. Have the same spacing. Thereby, in the region of the pattern of the reinforcing structure, preferably made from a dielectric, ie in the central region of the material layer that accommodates the reinforcing structure, the proportion of dielectric is the material of the conductive material layer It becomes larger than the ratio of.

本発明の１発展形態によれば、有利には別の導電性材料層が設けられており、この導電性材料層は、補強構造体を有する導電性材料層に配置されており、かつ誘電体から構成されかつ中央に配置された島を有しており、ここでこの島は、導電性材料層によってフレーム状に包囲される。これにより、本発明のこの発展形態においても、ボンディングパッドの下の領域には別の構造体が存在しないままになる。このようにして得られるボンディングコンタクトは、ボンディングパッドの下に、基板表面に対して垂直方向に延びかつ誘電体から構成される複数の領域を有し、これらの領域は、積層体において中断されることはない。これにより、材料の弾性的な歪み限界までの、ボンディングコンタクトの負荷耐性が得られるのである。   According to a development of the invention, another conductive material layer is advantageously provided, this conductive material layer being arranged on the conductive material layer with the reinforcing structure, and the dielectric And has a centrally located island, wherein the island is surrounded by a frame of conductive material. Thereby, even in this development of the invention, there remains no other structure in the region under the bonding pad. The bonding contact thus obtained has a plurality of regions extending in a direction perpendicular to the substrate surface and composed of a dielectric under the bonding pad, and these regions are interrupted in the stacked body. There is nothing. As a result, the load resistance of the bonding contact up to the elastic strain limit of the material can be obtained.

したがって有利にも２つの導電性材料層間、またはボンディングパッドと、その下にある導電性材料層との間の別の誘電体層も同様に、電気的な接続に必要な貫通コンタクト部を縁部領域だけに有するのである。   Therefore, advantageously, another dielectric layer between the two conductive material layers or between the bonding pad and the underlying conductive material layer likewise has the edge of the through contact necessary for electrical connection. It has only in the area.

最後に本発明の１発展形態によれば、２つの導電性材料層の間に１つの誘電体層が配置されており、この誘電体層により、上記の縁部領域に配置される貫通コンタクト部を介して、上記の２つの導電性材料層が電気的に接続される。   Finally, according to one development of the invention, a dielectric layer is arranged between the two conductive material layers, and this dielectric layer allows the through contact portion to be arranged in the edge region. The two conductive material layers described above are electrically connected via each other.

実際のボンディングパッドが、負荷耐性能力の低い構造体を有しないように維持するため、パッシベーション層における開口部によって定められるボンディングパッドには、貫通コンタクト部がない。本発明の１発展形態によれば、これらの貫通コンタクト部は、パッシベーション層の縁部領域に配置される。   In order to maintain the actual bonding pad so as not to have a structure having a low load resistance capability, the bonding pad defined by the opening in the passivation layer has no through contact portion. According to one development of the invention, these through contact portions are arranged in the edge region of the passivation layer.

また殊に有利であるのは、上記の補強構造体を有する導電性材料層が、別の材料層および／または誘電体層を基準にして、基板側に配置される場合である。すなわち、この導電性材料層は、可能な限り基板の近くに配置されるのである。これにより、場合によっては発生する亀裂をこの構造化された材料層によって補強することができる。   It is also particularly advantageous when the conductive material layer having the reinforcing structure is arranged on the substrate side with respect to another material layer and / or dielectric layer. That is, the conductive material layer is disposed as close to the substrate as possible. In this way, cracks that occur in some cases can be reinforced by this structured material layer.

上記の導電性材料層は、金属、有利にはアルミニウムおよび／または銅によって形成され、また誘電体層における貫通コンタクト部は、電気的な接触接続のために金属、有利にはタングステンまたはアルミニウムによって充填される。   The conductive material layer is formed of metal, preferably aluminum and / or copper, and the through contact in the dielectric layer is filled with metal, preferably tungsten or aluminum, for electrical contact connection. Is done.

有利な１実施形態によれば、上記のボンディングコンタクト層の縁部は、第２金属層の金属製のフレームの内側の縁部とも、また外側の縁部ともずれている。さらに第２金属層のフレームの内側の縁部も外側の縁部も共に、第１金属層のフレームの内側および外側の縁部とずれている。第１金属層のフレームの内側の縁部も外側の縁部も共に上記の縁部からずれているため、第１金属層の縁部、第２金属層の縁部およびボンディングコンタクト層の縁部で互いに重なり合うものはない。言い換えると、個々の金属面およびボンディング面における金属フレームのそれぞれの外側の縁部は、互いにラテラム方向にずれているのである。   According to an advantageous embodiment, the edge of the bonding contact layer is offset from the inner edge and the outer edge of the metal frame of the second metal layer. In addition, both the inner and outer edges of the second metal layer frame are offset from the inner and outer edges of the first metal layer frame. Since both the inner edge and the outer edge of the frame of the first metal layer are offset from the above edges, the edge of the first metal layer, the edge of the second metal layer, and the edge of the bonding contact layer There is nothing that overlaps each other. In other words, the respective outer edges of the metal frame on the individual metal surfaces and bonding surfaces are offset from each other in the lateral direction.

発明者の調査によって示されたのは、互いにずらした金属層の縁部により、亀裂の形成を効果的に抑止することできることである。この際に注意すべきであるのは、個々のフレームおよびボンディングコンタクト層が、択一的な実施形態だけにおいてヴィアないしはスルーコンタクトによって電気的に接続されることである。   The inventors' investigation has shown that the formation of cracks can be effectively suppressed by the edges of the metal layers being offset from each other. It should be noted that the individual frames and bonding contact layers are electrically connected by vias or through contacts only in alternative embodiments.

個々のフレームを互いにずらすという上記の原理は、３つ以上の金属面に拡張することが可能である。   The above principle of shifting the individual frames relative to each other can be extended to more than two metal surfaces.

以下では添付の図面を参照し、実施例に基づいて本発明を詳しく説明する。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

図１のボンディングコンタクト１は、半導体基板２上に配置されており、この半導体基板には、ｘで示した領域の外側に複数のアクティブ半導体素子、例えばトランジスタ、ダイオード、メモリまたはセンサ素子などを実現することができる。   The bonding contact 1 of FIG. 1 is disposed on a semiconductor substrate 2, and a plurality of active semiconductor elements such as transistors, diodes, memories, or sensor elements are realized on the semiconductor substrate outside the region indicated by x. can do.

ボンディングコンタクト１は、複数の材料層、有利には上下に重なった３つの材料層を有している。すなわちボンディング個所は、基板２に配置されてはいるが、２つの薄い誘電体層９によって基板２から離れているアルミニウム製の第１金属層３を有している。この第１金属層３には誘電体製の補強構造体１０が設けられており、この補強構造体１０は誘電体層８によって第２金属層７から離されている。最後にボンディングコンタクト１は、ボンディングコンタクト層４でありかつ同様にアルミニウムである第３金属層を有している。ボンディングコンタクト層４の表面は、ボンディング面ないしはボンディングパッド５を形成しており、ここでこの面は、パッシベーション層１３によって矩形に包囲されている。このことは図２の平面図に示されているとおりである。ボンディングコンタクトそう４は、縁部５ａを有しており、この縁部は、パッシベーション層１３の下側に構成されている。すなわち、パッシベーション層１３は、四方の縁部においてボンディングコンタクト層４に重なっているのである。第２金属層７とボンディングコンタクト層４との間には第２誘電体層６が配置されている。第１誘電体層８の材料も、第２誘電体層６の材料も共にふつうは二酸化ケイ素ＳｉＯ２が含まれている。 The bonding contact 1 has a plurality of material layers, preferably three material layers stacked one above the other. That is, the bonding portion has the first metal layer 3 made of aluminum which is disposed on the substrate 2 but is separated from the substrate 2 by two thin dielectric layers 9. The first metal layer 3 is provided with a dielectric reinforcing structure 10, and the reinforcing structure 10 is separated from the second metal layer 7 by a dielectric layer 8. Finally, the bonding contact 1 is a bonding contact layer 4 and has a third metal layer which is also aluminum. The surface of the bonding contact layer 4 forms a bonding surface or bonding pad 5, which is surrounded by a passivation layer 13 in a rectangular shape. This is as shown in the plan view of FIG. The bonding contact so 4 has an edge 5 a, which is formed below the passivation layer 13. That is, the passivation layer 13 overlaps the bonding contact layer 4 at the four edge portions. A second dielectric layer 6 is disposed between the second metal layer 7 and the bonding contact layer 4. Material of the first dielectric layer 8 is also the material also both ordinary second dielectric layer 6 contains silicon dioxide SiO 2.

図１から明瞭にわかるのは、ボンディングコンタクト層４ないしはボンディングコンタクト５以外では、絶縁層１４内に補強構造体が配置されることであり、ここでこの絶縁層は少なくとも２μｍの厚さを有するべきである。絶縁層１４は、図１に示したようにただ１つの層として相応に厚く実施するかまたは重なり合う複数の部分絶縁層から構成することが可能である。   It can be clearly seen from FIG. 1 that, except for the bonding contact layer 4 or the bonding contact 5, a reinforcing structure is arranged in the insulating layer 14, where this insulating layer should have a thickness of at least 2 μm. It is. The insulating layer 14 can be implemented as a single layer correspondingly thicker as shown in FIG. 1 or can be composed of a plurality of overlapping partial insulating layers.

第１金属層３に実現される補強構造体１０のパターンは、個別のパターンエレメントから構成され、これらのパターンエレメントは、異なる形状を有する島１１および１２として形成され、またそれぞれ誘電体、例えば２酸化ケイ素からなる。図２の第１金属層３の平面図において、島１１は、金属層３の面において正方形の断面を有する第１形状からなり、また島１２の断面は十字形の第２形状である。   The pattern of the reinforcing structure 10 realized in the first metal layer 3 is composed of individual pattern elements, which are formed as islands 11 and 12 having different shapes and are each made of a dielectric, for example 2 Made of silicon oxide. In the plan view of the first metal layer 3 in FIG. 2, the island 11 has a first shape having a square cross section on the surface of the metal layer 3, and the island 12 has a cross-shaped second shape.

正方向の島１１も、十字形の島１２も共にそれぞれ格子状に配置されており、十字形の島１２は、隣接する４つの島１１の間にある。ここでこれらの隣接する４つの島１１は、島１１によって形成される格子状構造体の格子点を構成する。   Both the positive islands 11 and the cross-shaped islands 12 are arranged in a lattice pattern, and the cross-shaped islands 12 are located between the four adjacent islands 11. Here, these four adjacent islands 11 constitute lattice points of the lattice structure formed by the islands 11.

隣接する十字形の島１２同士の境界部と、十字形の島１２と正方形の島１１との間の境界部とは、同じ一定の間隔を有しているため、島１１と１２との間には金属層３のウェブ状の材料が残ったままになる。十字形の島１２の間にある金属ウェブを３ａと記し、格子状の島１１と十字形の島１２との間にある金属ウェブを３ｂと記す。   Since the boundary part between the adjacent cross-shaped islands 12 and the boundary part between the cross-shaped island 12 and the square island 11 have the same fixed interval, the space between the islands 11 and 12 is the same. The web-like material of the metal layer 3 remains. A metal web between the cross-shaped islands 12 is denoted as 3a, and a metal web between the lattice-shaped islands 11 and the cross-shaped islands 12 is denoted as 3b.

補強構造体１０は、金属層３の閉じた縁部３ｃによって囲まれており、金属層３は、この縁部３ｃの領域において、第１誘電体層８に配置される貫通コンタクト１５により、第２金属層７に電気的に接続される。   The reinforcing structure 10 is surrounded by a closed edge 3 c of the metal layer 3, and the metal layer 3 is formed in the region of the edge 3 c by a through contact 15 disposed on the first dielectric layer 8. Two metal layers 7 are electrically connected.

第２金属層７はフレーム状に構造化されるため、金属フレーム７ａにより、誘電体島１４が囲まれる。誘電体島１４の代わりに酸化島１４を設けることも可能である。金属フレーム７ａは、第１誘電体層８内の貫通コンタクト１５を介して、第１金属層３の金属フレーム３ｃに電気的に接続される。   Since the second metal layer 7 is structured in a frame shape, the dielectric island 14 is surrounded by the metal frame 7a. An oxide island 14 may be provided instead of the dielectric island 14. The metal frame 7 a is electrically connected to the metal frame 3 c of the first metal layer 3 through the through contact 15 in the first dielectric layer 8.

さらに第２金属層７のこのフレーム７ａは、第２誘電体層６に配置される貫通コンタクト部１６を介して、第３金属層４に接続される。貫通コンタクト部１６も同様に第２誘電体層６の縁部領域に配置されており、殊に第１誘電体層８の貫通コンタクト部１５に重なるように配置されている。   Further, the frame 7 a of the second metal layer 7 is connected to the third metal layer 4 through a through contact portion 16 disposed in the second dielectric layer 6. Similarly, the through contact portion 16 is arranged in the edge region of the second dielectric layer 6, and in particular, is arranged so as to overlap the through contact portion 15 of the first dielectric layer 8.

貫通コンタクト部１５ないしは１６は、タングステンないしはアルミニウムからなる。   The through contact portions 15 to 16 are made of tungsten or aluminum.

図２からわかるように、これらの貫通コンタクト部１５および１６は、ボンディングコンタクト１の４つのすべての面に配置されている。すなわち貫通コンタクトは、ボンディングコンタクトを完全に包囲しているのである。これにより、貫通コンタクトは、実質的なボンディングパッド構造体に属してはおらず、パッシベーション層１３の下で垂直方向に延びているのである。このことは図２の平面図からもわかり、この図によれば、補強構造体１０は、パッシベーション層１３によって構成されるフレーム内に配置される。これに続く縁取りは、第２金属層７のフレーム７ａの内側の辺によって構成される。   As can be seen from FIG. 2, these through contact portions 15 and 16 are arranged on all four surfaces of the bonding contact 1. That is, the through contact completely surrounds the bonding contact. As a result, the through contact does not belong to a substantial bonding pad structure, and extends vertically under the passivation layer 13. This can also be seen from the plan view of FIG. 2, in which the reinforcing structure 10 is arranged in a frame constituted by the passivation layer 13. The subsequent border is constituted by the inner side of the frame 7 a of the second metal layer 7.

補強構造体１０の領域では、すなわちパッシベーション層１３によって定められるボンディング面５の下側では、すべての層の誘電体から構成されかつ垂直方向に延びるパイルが、第１金属層の島１１または１２から始まって第２誘電体層６まで延在している。これによって機械的に高い抵抗力が得られるのである。   In the region of the reinforcing structure 10, ie below the bonding surface 5 defined by the passivation layer 13, a pile composed of all layers of dielectric material and extending vertically extends from the island 11 or 12 of the first metal layer. It starts and extends to the second dielectric layer 6. This provides a mechanically high resistance.

図３にはボンディングコンタクト１の有利な第２の実施形態が示されている。以下では、図１に示した実施例との違いだけを説明する。ボンディングコンタクト層４は、縁部５ａによって区切られている。ここではボンディングコンタクト層４の縁部５ａは、第２金属層７の金属製フレーム７ａの内側の縁部に対しても外側の縁部に対してもずれている。さらに第２金属層のフレーム７ａの外側の縁部も内側の縁部も共に、第１金属層３のフレーム３ｃの内側および内側の縁部に対してずれている。また第１金属層３のフレーム３ｃの外側の縁部および内側の縁部も縁部５ａに対してずれているため、第１金属層３の縁部、第２金属層７の縁部およびボンディングコンタクト層４の縁部は上下に重なっていない。言い換えると、金属フレーム３ｃ，７ａの外側の縁部およびボンディング面５ａの外側の縁部はそれぞれ互いにラテラル方向にずれているのである。ここで注意すべきであるのみ、個々のフレーム３ｃおよび７ａおよびボンディングコンタクト層４は、択一的な１実施形態においてのみ、ヴィアないし貫通コンタクト部１５および１６によって電気的に接続されていることである。   FIG. 3 shows an advantageous second embodiment of the bonding contact 1. In the following, only differences from the embodiment shown in FIG. 1 will be described. The bonding contact layer 4 is delimited by the edge 5a. Here, the edge portion 5 a of the bonding contact layer 4 is shifted from the inner edge portion and the outer edge portion of the metal frame 7 a of the second metal layer 7. Furthermore, both the outer edge and the inner edge of the frame 7a of the second metal layer are shifted from the inner and inner edges of the frame 3c of the first metal layer 3. Further, since the outer edge and the inner edge of the frame 3c of the first metal layer 3 are also shifted from the edge 5a, the edge of the first metal layer 3, the edge of the second metal layer 7, and bonding The edge of the contact layer 4 does not overlap vertically. In other words, the outer edges of the metal frames 3c and 7a and the outer edges of the bonding surface 5a are shifted from each other in the lateral direction. It should be noted here that the individual frames 3c and 7a and the bonding contact layer 4 are electrically connected by vias or through contacts 15 and 16 only in an alternative embodiment. is there.

１ ボンディングコンタクト、 ２ 半導体基板、 ３ 導電性材料層、金属層、 ３ａ 隣接する島１２間の金属層３のウェブ、 ３ｂ 島１２と島１１との間の金属層３のウェブ、 ３ｃ 金属層３のフレームを囲む補強構造体１０、 ４ 金属層、 ５ ボンディング面（ボンディングパッド）、 ５ａ ボンディング面の縁部、 ６ 誘電体層、 ７ 導電性材料層、金属層、 ７ａ 金属層７のフレーム、 ８ 誘電体層、 ９ 誘電体層、 １０ 補強構造体、 １１ 第１形状の島、 １２ 第２形状の島、 １３ パッシベーション層、 １４ 金属層７の誘電体島、 １５ 誘電体層８の貫通コンタクト、 １６ 誘電体層６の貫通コンタクト   DESCRIPTION OF SYMBOLS 1 Bonding contact, 2 Semiconductor substrate, 3 Conductive material layer, Metal layer, 3a Metal layer 3 web between adjacent islands 12 3b Metal layer 3 web between island 12 and island 11 3c Metal layer 3 Reinforcing structure 10 surrounding the frame, 4 metal layer, 5 bonding surface (bonding pad), 5a edge of bonding surface, 6 dielectric layer, 7 conductive material layer, metal layer, 7a metal layer 7 frame, 8 Dielectric layer, 9 dielectric layer, 10 reinforcing structure, 11 first shape island, 12 second shape island, 13 passivation layer, 14 dielectric island of metal layer 7, 15 through contact of dielectric layer 8, 16 Through-contact of dielectric layer 6

Claims (12)

半導体基板（２）上の、補強構造体（１０）を有するボンディングコンタクト（１）において、
該ボンディングコンタクトには、
− 前記の半導体基板（２）上に配置される少なくとも１つの第１金属層（３）と、
− 当該の第１金属層（３）の上方に配置される第３金属層（４）とを有しており、
前記の第１金属層（３）には、パターンを有する補強構造体（１０）が収容され、
前記の第３金属層（４）は、ボンディング面（ボンディングパッド）（５）を有するボンディングコンタクト層であり、
さらに
− 前記のボンディング面（５）の下方かつ第１金属層（３）の上方に絶縁層（１４）が配置されており、
当該の絶縁層（１４）は、前記のボンディング面（５）の縁部（５ａ）を越えて突き出ている、ボンディングコンタクト（１）において、
− 前記の補強構造体（１０）は、当該のボンディング面（５）の上側から見た場合に当該のボンディング面（５）の下方において第１金属層（３）内に構成されており、
− 当該の補強構造体（１０）には誘電体島（１１，１２）が含まれていることを特徴とする
ボンディングコンタクト（１）。 In the bonding contact (1) having the reinforcing structure (10) on the semiconductor substrate (2),
The bonding contact includes
-At least one first metal layer (3) arranged on said semiconductor substrate (2);
A third metal layer (4) disposed above the first metal layer (3),
The first metal layer (3) contains a reinforcing structure (10) having a pattern,
The third metal layer (4) is a bonding contact layer having a bonding surface (bonding pad) (5),
Furthermore, an insulating layer (14) is disposed below the bonding surface (5) and above the first metal layer (3),
In the bonding contact (1), the insulating layer (14) protrudes beyond the edge (5a) of the bonding surface (5).
The reinforcing structure (10) is configured in the first metal layer (3) below the bonding surface (5) when viewed from above the bonding surface (5);
A bonding contact (1), characterized in that the reinforcing structure (10) includes dielectric islands (11, 12); 前記の絶縁層（１４）は、少なくともほぼ２μｍの厚さを有し、かつ複数の部分層から構成される、
請求項１に記載のボンディングコンタクト。 The insulating layer (14) has a thickness of at least approximately 2 μm and is composed of a plurality of partial layers;
The bonding contact according to claim 1. − 前記の補強構造体（１０）は、規則的に配置される第１形状の島（１１）および第２形状の島（１２）から構成され、
− 第１形状の島（１１）は格子状に配置されており、
− 当該の第１形状の島（１１）は、直に隣接する４つの第２形状の島（１２）の間にそれぞれ配置されており、
− 第２形状の島（１２）は格子状の構造を構成する、
請求項１または２項に記載のボンディングコンタクト。 The reinforcing structure (10) is composed of regularly arranged first-shaped islands (11) and second-shaped islands (12);
-The first shape islands (11) are arranged in a grid,
The said first-shaped islands (11) are respectively arranged between the four adjacent second-shaped islands (12);
The second shaped islands (12) constitute a lattice-like structure;
The bonding contact according to claim 1 or 2. 前記の第１金属層（３）にフレーム（３ｃ）が構成されており、
当該フレーム（３ｃ）により、前記の補強構造体（１０）が包囲される、
請求項１から３までのいずれか１項に記載のボンディングコンタクト。 A frame (3c) is formed on the first metal layer (3),
The reinforcing structure (10) is surrounded by the frame (3c).
The bonding contact according to any one of claims 1 to 3. 前記の第１金属層（３）は、縁部領域にて、少なくとも１つの誘電体層（８）に配置される貫通コンタクト部（１５）を介して前記のボンディングコンタクト層（４）に電気的に接続される、
請求項１から４までのいずれか１項に記載のボンディングコンタクト。 The first metal layer (3) is electrically connected to the bonding contact layer (4) via a through contact portion (15) disposed in at least one dielectric layer (8) in the edge region. Connected to the
The bonding contact according to any one of claims 1 to 4. 前記の第１形状の島（１１）は、第１金属層（３）の面にて正方形または矩形の断面を有する、
請求項１から５までのいずれか１項に記載のボンディングコンタクト（１）。 The first shape island (11) has a square or rectangular cross section on the surface of the first metal layer (3),
Bonding contact (1) according to any one of the preceding claims. 前記の第２形状の島（１２）は、第１金属層（３）の面にて十字形の断面を有する、
請求項１から６までのいずれか１項に記載のボンディングコンタクト（１）。 The second shape island (12) has a cross-shaped cross section on the surface of the first metal layer (3),
Bonding contact (1) according to any one of the preceding claims. 第２金属層（７）が設けられており、
該第２金属層（７）は、前記の補強構造体（１０）を有する第１金属層（３）の上に配置されており、かつ誘電体から構成されかつ中央に配置される島を有しており、
当該の島は、第２金属層（７）によってフレーム状に包囲される、
請求項１から７までのいずれか１項に記載のボンディングコンタクト（１）。 A second metal layer (7) is provided;
The second metal layer (7) is disposed on the first metal layer (3) having the reinforcing structure (10), and is composed of a dielectric and has an island disposed in the center. And
The island is surrounded by a second metal layer (7) in a frame shape,
Bonding contact (1) according to any one of the preceding claims. 前記の第１金属層（３）と第２金属層（７）との間に誘電体層（８）が配置されており、
該誘電体層より、縁部領域に配置された貫通コンタクト部（１５）を介して前記の２つの導電性材料層（３，７）が電気的に接続される、
請求項８に記載のボンディングコンタクト（１）。 A dielectric layer (8) is disposed between the first metal layer (3) and the second metal layer (7);
From the dielectric layer, the two conductive material layers (3, 7) are electrically connected through a through contact portion (15) disposed in an edge region.
Bonding contact (1) according to claim 8. 前記のボンディング面（５）は、縁部領域にて、誘電体層（６）に配置される貫通コンタクト部（１６）を介して第２金属層（７）に電気的に接続される、
請求項９に記載のボンディングコンタクト（１）。 The bonding surface (5) is electrically connected to the second metal layer (7) via a through contact portion (16) disposed in the dielectric layer (6) in the edge region.
Bonding contact (1) according to claim 9. 前記のボンディング面（５）は、パッシベーション層（１３）の開口部によって定められ、
前記の貫通コンタクト部（１５，１６）は、当該のパッシベーション層（１３）の縁部領域に配置される、
請求項１から１０までのいずれか１項に記載のボンディングコンタクト（１）。 The bonding surface (5) is defined by the opening of the passivation layer (13),
The through contact portions (15, 16) are disposed in the edge region of the passivation layer (13).
Bonding contact (1) according to any one of the preceding claims. 前記の金属製のフレームの外側の縁部（３ｃ，７ａ）と、ボンディング面の外側の縁部（５ａ）とはそれぞれラテラル方向にずれている、
請求項１から１１までのいずれか１項に記載のボンディング個所（１）。 The outer edge (3c, 7a) of the metal frame and the outer edge (5a) of the bonding surface are shifted in the lateral direction, respectively.
The bonding part (1) according to any one of claims 1 to 11.
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