JP2012015385A - Substrate processing apparatus, substrate processing method, program and computer storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform processing of a substrate at a plurality of processing sections efficiently in a substrate processing apparatus with the plurality of processing sections.SOLUTION: A developer 30 comprises a processing section 130 with a spin chuck 210 which rotates a wafer W while holding and a cup body 220 provided to surround the side of the wafer W, a first developing solution nozzle 151 discharging a first developing solution onto the wafer W, a second developing solution nozzle 152 discharging a second developing solution onto the wafer W, and a shared arm 150 supporting both the first developing solution nozzle 151 and second developing solution nozzle 152. In the plan view, the discharge direction of the first developing solution being discharged obliquely downward from the first developing solution nozzle 151, and the discharge direction of the second developing solution being discharged obliquely downward from the second developing solution nozzle 152 are the same direction as the rotational direction of the wafer W.

Description

  The present invention relates to a substrate processing apparatus, a substrate processing method using the substrate processing apparatus, a program, and a computer storage medium.

  For example, in a manufacturing process of an image sensor or the like, a photolithography process is performed in order to form a resist pattern for a color filter and a resist pattern for a microlens. In the photolithography process, for example, a resist coating process for coating a resist on a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, an exposure process for exposing a predetermined pattern on the resist film, and an exposed resist A development process for developing the film is sequentially performed, and a predetermined resist pattern is formed on the wafer.

  The above-described development processing is performed by, for example, a developing device. In the developing device, for example, three development processing units are arranged in the horizontal direction. Each development processing unit has a spin chuck that holds and rotates the wafer, and a cup provided around the side of the wafer held by the spin chuck. Further, the developing device has a developer nozzle that discharges the developer onto the substrate held by the spin chuck, and a rinse liquid nozzle that discharges a rinse liquid such as pure water onto the substrate held by the spin chuck. ing. For example, the developer nozzle is provided in common to a plurality of development processing units, and is configured to be movable to each development processing unit. Then, the developer is discharged from the developer nozzle onto the wafer while moving the developer nozzle in the radial direction of the wafer. Further, a rinse liquid nozzle is provided for each development processing section (Patent Document 1).

JP 2009-33054 A

  Here, as described above, in the manufacturing process of an image sensor or the like, a photolithography process for forming a resist pattern for a color filter and a photolithography process for forming a resist pattern for a microlens are performed. That is, a development process using a developer for a color resist (hereinafter sometimes referred to as “first developer”) and a developer for a microlens resist (hereinafter referred to as “second developer”) may be used. ) Is used for development processing.

  In order to efficiently perform these development processes, a developer nozzle that discharges the first developer (hereinafter, also referred to as “first developer nozzle” in some cases) in the above-described developing device, and a second It is preferable to provide a developer nozzle (hereinafter sometimes referred to as “second developer nozzle”) for discharging the developer. Further, in order to simplify the developing device, it is preferable to support these two developer nozzles with a shared arm that is movable to each developing processing unit.

  However, for example, when discharging the first developer onto the wafer while moving the first developer nozzle in the radial direction of the wafer, when the first developer nozzle is positioned above the outer periphery of the wafer, The second developer nozzle may interfere with the cup body. On the other hand, when the second developer is ejected from the second developer nozzle onto the wafer, the first developer nozzle is placed in the cup body when the second developer nozzle is positioned above the outer periphery of the wafer. May interfere.

  In this case, it is also conceivable to cut out the cup body at a portion that interferes with the developer nozzle. However, for example, a mist-like rinsing liquid is discharged from the rinsing liquid nozzle, but when the cup body is provided with a notch in this way, the mist-like rinsing liquid is scattered from the notch, for example Will be scattered in the developing processing section. If it does so, in this adjacent development processing part, processing of a wafer cannot be performed appropriately.

  Thus, simply providing two developer nozzles in the developing device has not led to efficient development processing.

  The present invention has been made in view of this point, and an object of the present invention is to efficiently perform a plurality of substrate processes in a substrate processing apparatus including a plurality of processing units that process a substrate.

  In order to achieve the above object, the present invention is a substrate processing apparatus, provided to surround a rotation holding unit that holds and rotates a substrate, and a side of the substrate held by the rotation holding unit. A plurality of processing units each including a cup body; a first processing liquid nozzle that discharges a first processing liquid onto the substrate held by the rotation holding unit; and a substrate held by the rotation holding unit. A second processing liquid nozzle that discharges a second processing liquid, and a support member that is movable with respect to the plurality of processing units and supports both the first processing liquid nozzle and the second processing liquid nozzle. And a discharge direction of the first treatment liquid discharged obliquely downward from the first treatment liquid nozzle and a discharge of the second treatment liquid discharged obliquely downward from the second treatment liquid nozzle The direction is the rotation of the substrate held by the rotation holding part in plan view. It is characterized in that a direction the same direction.

  According to the present invention, for example, when a substrate is processed using the first processing liquid, the substrate held by the rotation holding unit is rotated and the second processing liquid nozzle is moved by the first processing liquid nozzle. The first processing liquid nozzle is moved from the first processing liquid nozzle onto the substrate so as to be in the same direction as the rotation direction of the substrate while moving the first processing liquid nozzle in the radial direction of the substrate in a state where the first processing liquid nozzle is moved forward. The first treatment liquid is discharged. Then, even if the first processing liquid nozzle is located above the outer periphery of the substrate, the second processing liquid nozzle does not interfere with the cup body. In addition, since the discharge direction of the first processing liquid and the rotation direction of the substrate are the same direction, the first processing liquid can be smoothly diffused on the substrate. On the other hand, for example, even when the substrate is processed using the second processing liquid, the substrate held by the rotation holding unit is rotated, and the first processing liquid nozzle is moved forward of the second processing liquid nozzle. The second processing liquid nozzle is moved from the second processing liquid nozzle onto the substrate so that the discharge direction is the same as the rotation direction of the substrate while the second processing liquid nozzle is moved in the radial direction of the substrate. The processing liquid is discharged. Then, even if the second processing liquid nozzle is located above the outer peripheral portion of the substrate, the first processing liquid nozzle does not interfere with the cup body. In addition, since the discharge direction of the second processing liquid and the rotation direction of the substrate are the same direction, the second processing liquid can be smoothly diffused on the substrate. As described above, in the substrate processing apparatus of the present invention, the substrate processing using the first processing liquid and the substrate processing using the second processing liquid can be appropriately performed, and a plurality of substrate processings are efficiently performed. be able to.

  The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are opposite in a plan view. The rotation direction of the substrate when the first processing liquid is discharged onto the substrate is supported and the rotation direction of the substrate when the second processing liquid is discharged onto the substrate is the same direction. You may have further the control part which controls a rotation holding member.

  The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are the same in a plan view. The rotation direction of the substrate when the first processing liquid is discharged onto the substrate is supported, and the rotation direction of the substrate when the second processing liquid is discharged onto the substrate is opposite to the rotation direction. You may have further the control part which controls a rotation holding member.

  You may have the rinse liquid nozzle which discharges a mist-like rinse liquid on the board | substrate hold | maintained at the said rotation holding | maintenance part.

  The processing units may be provided at two locations, and the support member may be disposed between the two processing units.

  The atmosphere in the space where each processing unit exists may be exhausted from different exhaust pipes.

  A partition wall that partitions the space where the respective processing units exist and allows the support member to pass therethrough may be provided between the two processing units.

  The cup body may include an upper cup and a lower cup, and the upper cup may be movable in a vertical direction with respect to the lower cup.

  An inner cup is provided inside the lower cup, and an accommodation space for accommodating the upper cup is formed between the lower cup and the inner cup, and the accommodation space is provided at a lower portion of the inner cup. Ventilation holes for circulating the air inside may be formed.

  The first processing solution may be a developer used for a color resist, and the second processing solution may be a developer used for a microlens resist.

  According to another aspect of the present invention, there is provided a substrate processing method using a substrate processing apparatus, wherein the substrate processing apparatus includes a rotation holding unit that holds and rotates a substrate, and a substrate side held by the rotation holding unit. A plurality of processing units including a cup body provided to surround the first processing liquid, a first processing liquid nozzle that discharges a first processing liquid onto a substrate held by the rotation holding unit, and the rotation holding A second processing liquid nozzle that discharges a second processing liquid onto a substrate held by the section; and the first processing liquid nozzle and the second processing are movable with respect to the plurality of processing sections. And a support member that supports the liquid nozzle together. The substrate processing method includes a first processing step of processing the substrate with the first processing liquid, and a first processing step of processing the substrate with the second processing liquid. 2 in the first processing step, and is held by the rotation holding portion. While rotating the substrate and moving the first processing liquid nozzle in the radial direction of the substrate in a state where the second processing liquid nozzle is positioned in front of the moving direction of the first processing liquid nozzle, The first processing liquid is discharged onto the substrate from the first processing liquid nozzle so that the discharge direction is the same as the rotation direction of the substrate in plan view. In the second processing step, the rotation holding is performed. And rotating the substrate held by the unit, the second processing liquid nozzle in the radial direction of the substrate in a state where the first processing liquid nozzle is positioned in front of the movement direction of the second processing liquid nozzle. While moving, the second processing liquid is discharged onto the substrate from the second processing liquid nozzle so that the discharging direction is the same as the rotation direction of the substrate in plan view.

  The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are opposite in a plan view. The rotation direction of the substrate in the first processing step and the rotation direction of the substrate in the second processing step may be the same direction.

  The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are the same in a plan view. The rotation direction of the substrate in the first processing step may be opposite to the rotation direction of the substrate in the second processing step.

  The substrate processing apparatus includes a rinsing liquid nozzle that discharges a mist-like rinsing liquid on a substrate held by the rotation holding unit, the processing unit is provided at two locations, and the support member is provided at the two locations. The cup body is arranged between the processing units, and the cup body includes an upper cup movable in the vertical direction and a lower cup capable of accommodating the upper cup, and the upper cup is raised in one processing unit. Then, while rotating the substrate held by the rotation holding unit and moving the rinse liquid nozzle in the radial direction of the substrate, the rinse liquid is discharged from the rinse liquid nozzle onto the substrate to clean the substrate. Meanwhile, in the other processing unit, the first step or the second step may be performed in a state where the upper cup is lowered and accommodated in the lower cup.

  The first processing solution may be a developer used for a color resist, and the second processing solution may be a developer used for a microlens resist.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the substrate processing apparatus in order to cause the substrate processing apparatus to execute the substrate processing method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, a plurality of substrate processes can be efficiently performed in a substrate processing apparatus including a plurality of processing units that process a substrate.

It is a top view which shows the outline of the internal structure of the coating-development processing system provided with the developing device concerning this Embodiment. It is a side view which shows the outline of an internal structure of a coating and developing treatment system. It is a side view which shows the outline of an internal structure of a coating and developing treatment system. It is a longitudinal cross-sectional view which shows the outline of a structure of a developing device. It is a cross-sectional view showing the outline of the configuration of the developing device. It is a side view which shows the outline of a structure of a 1st developing solution nozzle and a 2nd developing solution nozzle. It is a side view which shows the outline of a structure of a 1st developing solution nozzle and a 2nd developing solution nozzle. It is a side view which shows the outline of a structure of a 1st rinse liquid nozzle and a 2nd rinse liquid nozzle. It is a longitudinal cross-sectional view which shows the outline of a structure of a process part. It is a longitudinal cross-sectional view which shows the outline of a one part structure of a cup body. It is explanatory drawing which showed typically a mode that the wafer W was processed in the main process of the developing process using the 1st developing solution, (a) is a 1st image development on a wafer from a 1st developing solution nozzle. (B) shows a state of discharging a mist-like rinse liquid from the first rinse liquid nozzle onto the wafer, and (c) shows a state of liquid on the wafer from the second rinse liquid nozzle. A state in which the rinsing liquid is discharged is shown, and (d) a state in which the development processing is completed is shown. It is explanatory drawing which shows a mode that a 1st developing solution is discharged on a wafer from a 1st developing solution nozzle. It is explanatory drawing which showed typically a mode that the wafer W was processed in the main process of the image development process using a 2nd developing solution, (a) is 2nd image development on a wafer from a 2nd developing solution nozzle. (B) shows a state of discharging a mist-like rinse liquid from the first rinse liquid nozzle onto the wafer, and (c) shows a state of liquid on the wafer from the second rinse liquid nozzle. A state in which the rinsing liquid is discharged is shown, and (d) a state in which the development processing is completed is shown. It is explanatory drawing which shows a mode that a 2nd developing solution is discharged on a wafer from a 2nd developing solution nozzle. It is explanatory drawing which shows a mode that a developing process is performed in two process parts. It is explanatory drawing which shows the outline of a structure of the 1st developing solution nozzle and 2nd developing solution nozzle concerning other embodiment. In other embodiment, it is explanatory drawing which shows a mode that a 1st developing solution is discharged on a wafer from a 1st developing solution nozzle. In other embodiment, it is explanatory drawing which shows a mode that a 2nd developing solution is discharged on a wafer from a 2nd developing solution nozzle. It is a longitudinal cross-sectional view which shows the outline of a structure of the developing device concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of an internal configuration of a coating and developing treatment system 1 including a developing device as a substrate processing apparatus according to the present invention. 2 and 3 are side views showing an outline of the internal configuration of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment system 1 includes, for example, a cassette station 2 in which a cassette C containing a plurality of wafers W is carried in and out of the outside, and a predetermined single-wafer type in a photolithography process. It has a configuration in which a processing station 3 including a plurality of various processing apparatuses that perform processing and an interface station 5 that transfers the wafer W between the exposure apparatus 4 adjacent to the processing station 3 are integrally connected. .

  The cassette station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). The cassette C can be placed on these cassette placement plates 11 when the cassette C is carried into and out of the coating and developing treatment system 1.

  The cassette station 2 is provided with a wafer transfer device 21 that is movable on a transfer path 20 extending in the X direction as shown in FIG. The wafer transfer device 21 is also movable in the vertical direction and around the vertical axis (θ direction), and a cassette C on each cassette mounting plate 11 and a delivery device for a third block G3 of the processing station 3 to be described later. The wafer W can be transferred between the two.

  The processing station 3 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices. For example, the first block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and the second side is provided on the back side of the processing station 3 (X direction positive direction side in FIG. 1). Block G2 is provided. Further, a third block G3 is provided on the cassette station 2 side (Y direction negative direction side in FIG. 1) of the processing station 3, and the processing station 3 interface station 5 side (Y direction positive direction side in FIG. 1). Is provided with a fourth block G4.

  For example, in the first block G1, a plurality of liquid processing apparatuses are stacked in the vertical direction as shown in FIG. For example, developing devices 30 and 31 as substrate processing devices for developing the wafer W, a color resist for forming a resist pattern for a color filter on the wafer W (hereinafter sometimes simply referred to as “color resist”), Resist coating apparatuses 32, 33, and 34 for forming a resist film by applying a resist for forming a microlens resist pattern (hereinafter also referred to as “lens resist”) are arranged in five stages in order from the bottom. It is piled up. The detailed configuration of the developing devices 30 and 31 will be described later.

  The resist coating apparatuses 32, 33, and 34 have a plurality of cups F that accommodate the wafer W in the horizontal direction during processing, and can process the plurality of wafers W in parallel. The resist coating devices 32, 33, and 34 may apply color resist and lens resist by at least one of the devices. For example, each of the resist coating devices 32, 33, and 34 has a resist nozzle that applies a color resist and a resist nozzle that applies a lens resist, respectively. You may comprise so that both can be apply | coated. Alternatively, for example, the resist coating apparatuses 32 and 33 may have a resist nozzle for applying a color resist, and for example, the resist coating apparatus 34 may have a resist nozzle for applying a lens resist.

  The first block G1 includes a lower antireflection film forming apparatus that forms an antireflection film below the resist film of the wafer W, and an upper antireflection film that forms an antireflection film above the resist film of the wafer W. A forming apparatus or the like may be arranged.

  For example, in the second block G2, as shown in FIG. 2, there are a heat treatment apparatus 40 for performing heat treatment of the wafer W, an adhesion apparatus 41 for hydrophobizing the wafer W, and a peripheral exposure apparatus 42 for exposing the outer peripheral portion of the wafer W. They are arranged side by side in the vertical and horizontal directions. The heat treatment apparatus 40 includes a hot plate for placing and heating the wafer W and a cooling plate for placing and cooling the wafer W, and can perform both heat treatment and cooling treatment. In addition, the number and arrangement | positioning of the heat processing apparatus 40, the adhesion apparatus 41, and the peripheral exposure apparatus 42 can be selected arbitrarily.

  For example, in the third block G3, a plurality of delivery devices 50, 51, 52, 53, 54, 55, and 56 are provided in order from the bottom as shown in FIGS. The fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.

  As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. For example, a wafer transfer device 70 is disposed in the wafer transfer region D.

  The wafer transfer device 70 has a transfer arm that is movable in the Y direction, the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.

  For example, as shown in FIG. 2, a plurality of wafer transfer apparatuses 70 are arranged in the vertical direction, and can transfer the wafer W to a predetermined apparatus having the same height of the blocks G1 to G4, for example.

  Further, in the wafer transfer region D, a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.

  The shuttle transport device 80 is movable linearly in the Y direction, for example. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.

  As shown in FIG. 1, a wafer transfer device 90 is provided next to the third block G3 on the positive side in the X direction. The wafer transfer device 90 has a transfer arm that is movable in the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 90 moves up and down while supporting the wafer W, and can transfer the wafer W to each delivery device in the third block G3.

  The interface station 5 is provided with a wafer transfer device 100 and a delivery device 101. The wafer transfer apparatus 100 has a transfer arm that is movable in the Y direction, the θ direction, and the vertical direction, for example. The wafer transfer apparatus 100 can transfer the wafer W between each transfer apparatus, the transfer apparatus 101, and the exposure apparatus 4 in the fourth block G4, for example, by supporting the wafer W on a transfer arm.

  Next, the configuration of the developing devices 30 and 31 described above will be described. As shown in FIGS. 4 and 5, the developing device 30 has a processing container 120 that can be sealed inside. On the side surface of the processing container 120 on the wafer transfer area D side, as shown in FIG. 5, loading / unloading ports 121 and 121 for the wafer W are formed in, for example, two places. These loading / unloading ports 121 and 121 are formed at positions corresponding to processing units 130 and 131 described later.

  In addition, two exhaust pipes 122 and 122 for exhausting the atmosphere in the processing container 120 are connected to the bottom surface of the processing container 120. The two exhaust pipes 122 exhaust the atmosphere of the space where the processing units 130 and 131 exist in the processing container 120, respectively.

  Inside the processing container 120, for example, a developing solution as a first processing solution used for a color resist (hereinafter sometimes referred to as “first developing solution”) or a lens resist is used. Two processing units 130 and 131 are provided for applying a developing solution as a second processing solution (hereinafter also referred to as “second developing solution”) onto the wafer W. The processing units 130 and 131 are arranged in this order from the Y direction negative direction (left direction in FIG. 5) to the Y direction positive direction (right direction in FIG. 5).

  As shown in FIG. 5, two rails 140 and 141 extending along the Y direction (left and right direction in FIG. 5) are formed on the negative side in the X direction (downward direction in FIG. 5) of the processing units 130 and 131. Has been. The rails 140 and 141 are formed, for example, from the outside of the processing unit 130 on the Y direction negative direction (left direction in FIG. 5) to the outside of the processing unit 131 on the Y direction positive direction (right direction in FIG. 5). ing.

  A common arm 150 as a support member is attached to the rail 140 on the negative side in the X direction. The shared arm 150 has a first developer nozzle 151 as a first processing liquid nozzle for discharging a first developer and a second processing nozzle as a second processing liquid nozzle for discharging a second developer. A developer nozzle 152 is supported. The shared arm 150 is movable on the rail 140 by the nozzle driving unit 153. Thereby, the first developer nozzle 151 and the second developer nozzle 152 can move between the processing unit 130 and the processing unit 131, and further on the surface of the wafer W in the processing unit 130 and the processing unit 131. Can be moved in the radial direction of the wafer W. The shared arm 150 can be moved up and down by a nozzle driving unit 153, and the heights of the first developer nozzle 151 and the second developer nozzle 152 can be adjusted.

  A standby unit 154 for the first developer nozzle 151 and the second developer nozzle 152 is provided between the processing units 130 and 131. That is, the common arm 150 is disposed between the processing units 130 and 131 while the developing solution nozzles 151 and 152 are on standby. The standby unit 154 includes a first nozzle bath 155 that houses the first developer nozzle 151 and a second nozzle bath 156 that houses the second developer nozzle 152. In the first nozzle bath 155 and the second nozzle bus 156, the waiting first developer nozzle 151 and second developer nozzle 152 are washed, respectively, and the first developer nozzle 151 and the second developer nozzle 152, respectively. Dummy dispensing of the developer from 152 is performed. Since the standby unit 154 is divided into the first nozzle bus 155 and the second nozzle bus 156 in this way, for example, at the time of dummy dispensing of the developer nozzles 151 and 152, the developer is transferred to the other developer nozzles 151 and 151. The scattering to 152 can be prevented.

  The first developer nozzle 151 and the second developer nozzle 152 are supported on the shared arm 150 while being shifted in the X direction and the Y direction as shown in FIGS. As described above, the first developer nozzle 151 and the second developer nozzle 152 are arranged so as to be shifted from each other, so that the developer discharged from each developer nozzle 151, 152 is transferred to the other developer nozzles 151, 152. Can be prevented. A first discharge port 160 for discharging the first developer obliquely downward is formed at the lower end of the first developer nozzle 151. In addition, a second discharge port 161 that discharges the second developer obliquely downward is formed at the lower end of the second developer nozzle 152. The first discharge port 160 and the second discharge port 161 have a first developer discharge direction (arrow in FIG. 7) and a second developer discharge direction (arrow in FIG. 7) in plan view. In the opposite direction. Since the wafer W has high water repellency, when the first developer and the second developer are discharged vertically downward, the first developer and the second developer colliding on the wafer W are scattered. easy. In order to suppress such scattering, the first developer and the second developer are discharged obliquely downward from the first developer nozzle 151 and the second developer nozzle 152, respectively.

  The first discharge port 160 stores the first developer via a flow passage 162 formed in the first developer nozzle 151 and a supply pipe 163 provided on the upper side of the shared arm 150. The first developer supply source 164 communicates. The supply pipe 163 is provided with a supply device group 165 including a valve for controlling the flow of the first developer and a flow rate adjusting unit. The supply device group 165 supplies a predetermined amount of the first developer from the first developer supply source 164 to the first discharge port 160 via the supply pipe 163 and the flow passage 162.

  The second discharge port 161 stores the second developer via a flow passage 170 formed in the second developer nozzle 152 and a supply pipe 171 provided on the upper side of the shared arm 150. The second developer supply source 172 communicates. The supply pipe 171 is provided with a supply device group 173 including a valve for controlling the flow of the second developer, a flow rate adjusting unit, and the like. By this supply device group 173, a predetermined amount of the second developer is supplied from the second developer supply source 172 to the second discharge port 161 via the supply pipe 171 and the flow passage 170.

  As shown in FIG. 5, two arms 180 and 181 are attached to the rail 141 arranged on the Y direction positive direction side from the rail 141.

  One arm 180 supports a first rinse liquid nozzle 182 that discharges a mist-like rinse liquid and a second rinse liquid nozzle 183 that discharges a liquid rinse liquid. The arm 180 is movable on the rail 141 by a nozzle driving unit 184. As a result, the first rinse liquid nozzle 182 and the second rinse liquid nozzle 183 are connected to the central portion of the wafer W in the processing unit 130 from the standby unit 185 installed outside the processing unit 130 on the Y direction negative direction side. It can move to the upper side, and can move in the radial direction of the wafer W on the surface of the wafer W. The arm 180 can be moved up and down by a nozzle driving unit 184, and the heights of the first rinse liquid nozzle 182 and the second rinse liquid nozzle 183 can be adjusted. The standby unit 185 cleans the first rinse liquid nozzle 182 and the second rinse liquid nozzle 183 that are waiting, and the dummy of the rinse liquid from the first rinse liquid nozzle 182 and the second rinse liquid nozzle 183. Dispensing is performed.

  The first rinse liquid nozzle 182 and the second rinse liquid nozzle 183 are supported by the arm 180 via a support member 186 as shown in FIG. The support member 186 is provided to extend vertically downward from the arm 180.

  The first rinse liquid nozzle 182 is provided with a gas-liquid mixing unit 187. A gas supply pipe 188 that supplies an inert gas, for example, nitrogen gas, and a pure water supply pipe 189 that supplies, for example, pure water are connected to the gas-liquid mixing unit 187. The gas supply pipe 188 communicates with a gas supply source 190 that stores nitrogen gas, and the gas supply pipe 188 is provided with a supply device group 191 including a valve that controls the flow of nitrogen gas, a flow rate adjusting unit, and the like. Yes. The pure water supply pipe 189 communicates with a pure water supply source 192 that stores pure water, and the pure water supply pipe 189 includes a supply device group 193 including a valve that controls the flow of pure water, a flow rate control unit, and the like. Is provided. The nitrogen gas and pure water supplied from the gas supply source 190 and the pure water supply source 192 are mixed in the gas-liquid mixing unit 187 to form a mist, and the first rinse liquid nozzle 182 supplies a mist-like rinse. Liquid is discharged.

  In addition, the rinse liquid discharged from the 1st rinse liquid nozzle 182 should just be mist form, and the mixing method of nitrogen gas and pure water is not limited to this Embodiment. For example, nitrogen gas and pure water may be simultaneously discharged from the first rinse liquid nozzle to generate a mist-like rinse liquid and discharge it onto the wafer W. Alternatively, for example, the mist-like rinse liquid may be supplied directly from the rinse liquid supply source that stores the mist-like rinse liquid to the first rinse liquid nozzle.

  The second rinsing liquid nozzle 183 communicates with a rinsing liquid supply source 195 that stores a liquid rinsing liquid such as pure water via a supply pipe 194. The supply pipe 194 is provided with a supply device group 196 including a valve for controlling the flow of the liquid rinse liquid, a flow rate adjusting unit, and the like.

  As shown in FIG. 5, the other arm 181 also supports a first rinsing liquid nozzle 200 for discharging a mist-like rinsing liquid and a second rinsing liquid nozzle 201 for discharging a liquid rinsing liquid. . The arm 181 is movable on the rail 141 by the nozzle drive unit 202. As a result, the first rinse liquid nozzle 200 and the second rinse liquid nozzle 201 are connected to the central portion of the wafer W in the processing unit 131 from the standby unit 203 installed outside the processing unit 131 on the positive side in the Y direction. It can move to the upper side, and can move in the radial direction of the wafer W on the surface of the wafer W. The arm 181 can be moved up and down by the nozzle driving unit 202, and the heights of the first rinse liquid nozzle 200 and the second rinse liquid nozzle 201 can be adjusted. In the standby unit 203, the first rinsing liquid nozzle 200 and the second rinsing liquid nozzle 201 that are waiting are cleaned, and the rinsing liquid dummy from the first rinsing liquid nozzle 200 and the second rinsing liquid nozzle 201 is used. Dispensing is performed. The first rinse liquid nozzle 200 and the second rinse liquid nozzle 201 supported by the arm 181 are configured in the first rinse liquid nozzle 182 and the second rinse liquid nozzle 183 supported by the arm 180 described above. Since this is the same as the configuration of, the description is omitted.

  The processing unit 130 is provided with a spin chuck 210 as a rotation holding unit that holds and rotates the wafer W as shown in FIG. The spin chuck 210 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. By suction from this suction port, the wafer W can be sucked and held on the spin chuck 210.

  The spin chuck 210 is attached to the shaft 211. Below the spin chuck 210, a rotary drive unit 212 including a motor, a cylinder, and the like is provided via the shaft 211. By this rotation drive unit 212, the spin chuck 210 can rotate around the vertical at a predetermined speed and can be moved up and down.

  On the lower side of the spin chuck 210, a guide ring 213 having a mountain shape in cross section, that is, a shape protruding upward is provided. The outer peripheral portion of the guide ring 213 is bent and extended downward.

  A cup body 220 is provided outside the spin chuck 210, the wafer W held by the spin chuck 210, and the guide ring 213 so as to surround the spin chuck 210, the wafer W and the guide ring 213. The cup body 220 includes an internal cup 221, a lower cup 222, and an upper cup 223.

  The inner cup 221 is provided so as to surround the spin chuck 210, the wafer W, and the guide ring 213. The inner cup 221 can receive and collect the liquid scattered or dropped from the wafer W.

  The inner cup 221 has an opening larger than the wafer W so that the spin chuck 210 can move up and down on the upper surface. In addition, a gap 224 forming a discharge path is formed between the inner peripheral side surface of the inner cup 221 and the outer peripheral edge of the guide ring 213.

  In addition, a gas-liquid separator 225 that exhausts the atmosphere in the internal cup 221 and collects the waste liquid in the internal cup 221 is formed in an annular shape below the internal cup 221. A bent path is formed in the gas-liquid separation part 225 by the outer peripheral part of the guide ring 213 and the partition wall 226 provided on the bottom surface of the internal cup 221. The gas and liquid separation unit 225 separates the gas and the liquid by this curved path. A drainage pipe 227 for discharging the waste liquid in the internal cup 221 is connected to the outer region of the gas-liquid separation unit 225. An exhaust pipe 228 for exhausting the atmosphere in the internal cup 221 is connected to the inner region of the gas-liquid separator 225.

  The upper cup 223 can be moved up and down by, for example, a lifting drive unit 230 having a built-in cylinder. The upper cup 223 can receive and collect, for example, a mist-like rinse liquid that is discharged from the first rinse liquid nozzle 182 and scatters in the raised state. Further, the upper cup 223 is accommodated in an accommodating space 231 formed between the inner cup 221 and the lower cup 222 in a lowered state.

  A drainage pipe 232 that discharges waste liquid in the upper cup 223 and the lower cup 222 is connected to the storage space 231. In addition, the atmosphere in the accommodation space 231 is exhausted from a vent hole 233 formed through the lower portion of the internal cup 221. That is, as shown in FIG. 10, the atmosphere in the accommodation space 231 is exhausted from the exhaust pipe 228 through the vent hole 233 and the gas-liquid separator 225. In order to efficiently exhaust the storage space 231, it is preferable that a plurality of vent holes 233 be formed at equal intervals along the circumferential direction of the internal cup 221.

  Note that the configuration of the processing unit 131 is the same as that of the processing unit 130 described above, and thus the description thereof is omitted. Further, the configuration of the developing device 31 is the same as that of the developing device 30 described above, and a description thereof will be omitted.

  The coating and developing treatment system 1 is provided with a control unit 240 as shown in FIG. The control unit 240 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for executing development processing of the wafer W in the developing devices 30 and 31. The program storage unit also stores a program for executing wafer processing in the coating and developing processing system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 240 from the storage medium H.

  Next, a processing method of the wafer W performed using the coating and developing processing system 1 configured as described above will be described.

  First, a cassette C containing a plurality of wafers W is placed on a predetermined cassette placement plate 11 of the cassette station 2. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 21 and transferred to, for example, the transfer device 54 in the third block G3 of the processing station 3.

  Next, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70, and the temperature is adjusted. Thereafter, the wafer W is transferred to the adhesion device 41 of the second block G2 by the wafer transfer device 70 and subjected to an adhesion process. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, and the temperature is adjusted.

  Thereafter, the wafer W is transferred to the resist coating device 32 by the wafer transfer device 70. In the resist coating device 32, a color resist is coated on the rotating wafer W, and a resist film is formed on the wafer W.

  Thereafter, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70 and pre-baked. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the delivery device 55 of the third block G3.

  Next, the wafer W is transferred to the peripheral exposure device 42 by the wafer transfer device 70 and subjected to peripheral exposure processing. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the delivery device 56 of the third block G3.

  Next, the wafer W is transferred to the transfer device 52 by the wafer transfer device 90 and transferred to the transfer device 62 of the fourth block G4 by the shuttle transfer device 80.

  Thereafter, the wafer W is transferred to the exposure apparatus 4 by the wafer transfer apparatus 100 of the interface station 5 and subjected to exposure processing.

  Next, the wafer W is transferred from the exposure apparatus 4 to the delivery apparatus 60 of the fourth block G4 by the wafer transfer apparatus 100. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70 and subjected to post-exposure baking. Thereafter, the wafer W is transferred to the developing device 30 of the first block G1 by the wafer transfer device 70 and developed using the first developer. The developing process for the wafer W in the developing device 30 will be described later.

  After the development is completed, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70 and subjected to a post-bake process.

  Thereafter, the wafer W is transferred to the delivery device 50 of the third block G3 by the wafer transfer device 70, and then transferred to the cassette C of the predetermined cassette mounting plate 11 by the wafer transfer device 21 of the cassette station 2. Thus, a resist pattern of color resist is formed on the wafer W, and a series of photolithography processes is completed.

  Next, the development processing (first processing step in the present invention) of the wafer W using the first developer in the developing device 30 described above will be described. FIG. 11 is an explanatory view schematically showing how the wafer W is processed in the main steps of the development processing.

  First, the wafer W carried into the developing device 30 is sucked and held by the spin chuck 210. Then, as shown in FIG. 11A, with the upper cup 223 lowered and accommodated in the accommodating space 231, the common arm 150 is positioned above the outer periphery of the wafer W, that is, the wafer W in FIG. Move upward on the right outer periphery. At this time, the first developer nozzle 151 is disposed above the outer periphery of the wafer W.

  Thereafter, the wafer W held on the spin chuck 210 is rotated. At the same time, the first developing solution 151 is discharged onto the wafer W from the first developing solution nozzle 151 while moving the first developing solution nozzle 151 from the outer peripheral portion to the central portion of the wafer W. Then, the first developer discharged from the first developer nozzle 151 in a strip shape is supplied onto the wafer W in a spiral manner and diffuses over the entire surface of the wafer W.

  At this time, as shown in FIG. 12, the first developer nozzle 151 is moved in a state where the second developer nozzle 152 is positioned in front of the first developer nozzle 151 in the moving direction. Then, the first developer nozzle 151 is moved from the outer peripheral portion to the central portion of the wafer W, that is, the right half of the wafer W in FIG. 12 in the radial direction of the wafer W (Y direction negative direction). Further, the discharge direction of the first developer discharged from the first developer nozzle 151 (shaded arrow in FIG. 12) is the same direction as the rotation direction of the wafer W in plan view. In this way, the first coating liquid is smoothly diffused on the wafer W by making the discharge direction of the first developer and the rotation direction of the wafer W the same direction.

  When a predetermined time elapses, the resist film on the wafer W is developed by the first developer diffused on the wafer W. Thereafter, as shown in FIG. 11B, the first developer nozzle 151 and the second developer nozzle 152 are moved to the standby portion 154 and the arm 180 is moved above the outer peripheral portion of the wafer W. At this time, the first rinse liquid nozzle 182 is disposed above the outer peripheral portion of the wafer W.

  Thereafter, the upper cup 223 is raised. At this time, since the first rinsing liquid nozzle 182 and the second rinsing liquid nozzle 183 are supported by the arm 180 by the support member 186, they are arranged at appropriate positions without interfering with the upper cup 223. Thereafter, the wafer W held on the spin chuck 210 is rotated, and the first rinse liquid nozzle 182 is moved from the outer peripheral portion of the wafer W to the central portion, while being moved from the first rinse liquid nozzle 182 onto the wafer W. Dispense mist-like rinse liquid. At this time, the mist-like rinse liquid scatters in the cup body 220, but is collected and collected by the raised upper cup 223. Thus, the surface of the wafer W is cleaned with the mist-like rinse liquid. A predetermined resist pattern is formed on the wafer W by development using the first developer, and by discharging the mist-like rinse liquid from the first rinse liquid nozzle 182 in this way, The concave portion of the resist pattern can be appropriately cleaned.

  Thereafter, as shown in FIG. 11C, while the second rinse liquid nozzle 183 is further moved from the outer peripheral portion of the wafer W to the central portion, the liquid state is transferred from the second rinse liquid nozzle 183 onto the wafer W. The rinse liquid is discharged. Then, the surface of the wafer W is more reliably cleaned.

  Even after the rinse liquid from the second rinse liquid nozzle 183 is stopped, the wafer W is continuously rotated to dry the surface of the wafer W. Thereafter, as shown in FIG. 11D, after the upper cup 223 is lowered, the first rinse liquid nozzle 182 and the second rinse liquid nozzle 183 are moved to the standby unit 185. In this way, a series of development processing using the first developer is completed.

  A series of photolithography processes as described above are performed on, for example, a green color resist, a red color resist, and a blue color resist, and a predetermined resist pattern is formed on the wafer W. Then, a color filter is formed on the wafer W. Thereafter, a resist pattern for forming a microlens is formed on the color filter. In forming such a microlens resist pattern, after a lens resist resist film is formed on the wafer W, development processing is performed using a second developer.

  Next, the developing process of the wafer W using the above-described second developer in the developing device 30 (second processing step in the present invention) will be described. FIG. 13 is an explanatory diagram schematically showing how the wafer W is processed in the main steps of the development processing. Note that photolithography processes other than the development process using the second developer are the same as the series of photolithography processes described above, and thus the description thereof is omitted.

  First, the wafer W carried into the developing device 30 is sucked and held by the spin chuck 210. Then, as shown in FIG. 13A, with the upper cup 223 lowered and accommodated in the accommodating space 231, the common arm 150 is positioned above the outer periphery of the wafer W, that is, the wafer W in FIG. Move to upper left outer periphery. At this time, the second developer nozzle 152 is disposed above the outer peripheral portion of the wafer W.

  Thereafter, the wafer W held on the spin chuck 210 is rotated. At this time, as shown in FIG. 14, the rotation direction of the wafer W is the same as the rotation direction of the wafer W when the development processing is performed using the first developer shown in FIG. Then, at the same time as the wafer W is rotated, the second developer nozzle 152 is moved from the outer peripheral portion of the wafer W to the center portion as shown in FIG. A second developer is discharged onto W. Then, the second developer discharged from the second developer nozzle 151 in a strip shape is supplied on the wafer W in a spiral manner and diffuses over the entire surface of the wafer W.

  At this time, as shown in FIG. 14, the second developer nozzle 152 is moved in a state where the first developer nozzle 151 is positioned in front of the second developer nozzle 152 in the moving direction. Then, the second developer nozzle 152 is moved from the outer peripheral portion to the central portion of the wafer W, that is, in the left half of the wafer W in FIG. Further, the discharge direction of the second developer discharged from the second developer nozzle 152 (shaded arrow in FIG. 14) is the same direction as the rotation direction of the wafer W in plan view. As described above, the second developer is smoothly diffused on the wafer W by setting the discharge direction of the second developer and the rotation direction of the wafer W to be the same direction.

  When a predetermined time elapses, the resist film on the wafer W is developed by the first developer diffused on the wafer W. After that, as shown in FIG. 13B, the first developer nozzle 151 and the second developer nozzle 152 are moved to the standby portion 154 and the arm 180 is moved above the outer peripheral portion of the wafer W. At this time, the first rinse liquid nozzle 182 is disposed above the outer peripheral portion of the wafer W.

  Thereafter, the upper cup 223 is raised. Thereafter, the wafer W held on the spin chuck 210 is rotated, and the first rinse liquid nozzle 182 is moved from the outer peripheral portion of the wafer W to the central portion, while being moved from the first rinse liquid nozzle 182 onto the wafer W. Dispense mist-like rinse liquid. Thus, the surface of the wafer W is cleaned with the mist-like rinse liquid.

  Thereafter, as shown in FIG. 13C, while the second rinse liquid nozzle 183 is further moved from the outer peripheral portion of the wafer W to the central portion, the liquid state is transferred from the second rinse liquid nozzle 183 onto the wafer W. The rinse liquid is discharged. Then, the surface of the wafer W is more reliably cleaned.

  Even after the rinse liquid from the second rinse liquid nozzle 183 is stopped, the wafer W is continuously rotated to dry the surface of the wafer W. Thereafter, the first rinse liquid nozzle 182 and the second rinse liquid nozzle 183 are moved to the standby unit 185 as shown in FIG. In this way, a series of development processing using the second developer is completed.

  Note that while the processing unit 130 performs the developing process on the wafer W as described above, the other processing unit 131 may also perform the developing process on the wafer W. Specifically, for example, as shown in FIG. 15, the arm 180 is moved on the processing unit 130 and the shared arm 150 is moved on the processing unit 131. Then, in the processing unit 130, the wafer W is cleaned using the mist-like rinse liquid from the first rinse liquid nozzle 182 or the liquid rinse liquid from the second rinse liquid nozzle 183. During this time, the processing unit 131 develops the wafer W using the first developer from the first developer nozzle 151 or the second developer from the second developer nozzle 152. Alternatively, although not illustrated, the shared arm 150 may be moved on the processing unit 130 and the arm 181 may be moved on the processing unit 131. Then, while the wafer W is developed using the first developer or the second developer in the processing unit 130, the wafer W may be cleaned using the rinse liquid in the processing unit 131.

  According to the above embodiment, when developing the wafer W using the first developer, the wafer W held by the spin chuck 210 is rotated and the first developer nozzle 151 is moved to the wafer W. The first developer is discharged onto the wafer W from the first developer nozzle 151 while moving in the radial direction. The movement of the first developer nozzle 151 is performed in a state where the second developer nozzle 152 is positioned in front of the movement direction of the first developer nozzle 151, so that the first developer nozzle 151 is moved to the wafer. Even if it is located above the outer periphery of W, the second developer nozzle 152 does not interfere with the cup body 220. Further, since the discharge direction of the first developer from the first developer nozzle 151 and the rotation direction of the wafer W are the same in plan view, the first developer can be smoothly diffused on the wafer W. Can do.

  On the other hand, even when developing the wafer W using the second developer, the wafer W held by the spin chuck 210 is rotated and the first developer nozzle 151 is moved to the second developer nozzle 152. The second developing solution nozzle 152 is moved in the radial direction of the wafer W while being positioned in front of the second moving direction, and the second direction is such that the ejection direction is the same as the rotation direction of the wafer W in plan view. The second developer is discharged from the developer nozzle 152 onto the wafer W. Then, even if the second developer nozzle 152 is positioned above the outer peripheral portion of the wafer W, the first developer nozzle 151 does not interfere with the cup body 220. Further, since the discharge direction of the second developer and the rotation direction of the wafer W are the same in a plan view, the second developer can be smoothly diffused on the wafer W.

  As described above, in the substrate processing apparatus of the present embodiment, the development processing of the wafer W using the first developer and the development processing using the second developer can be appropriately performed, and a plurality of wafers can be performed. Processing can be performed efficiently.

  The first developer nozzle 151 and the second developer nozzle 152 are connected to the common arm 150 so that the discharge direction of the first developer and the discharge direction of the second developer are opposite to each other in plan view. It is supported. Thereby, the discharge direction of the first developer or the second developer and the rotation direction of the wafer W are the same in a plan view, and the first developer nozzle 151 and the second developer nozzle 152 and the cup are in the same direction. Interference with the body 220 can be reliably prevented.

  Further, since the first rinsing liquid nozzles 182 and 200 for discharging the mist-like rinsing liquid are respectively provided in the processing units 130 and 131, the wafer W is developed by the mist-like rinsing liquid after the development processing. The concave portion of the resist pattern formed thereon can be appropriately cleaned.

  Further, since the upper cup 223 of the cup body 220 is movable up and down, the upper cup 223 is raised even if mist-like rinse liquid is discharged onto the wafer W from the first rinse liquid nozzles 182 and 200. Thus, the scattered mist-like rinse liquid can be recovered. Accordingly, the rinse liquid can be prevented from scattering in the processing container 120, and the wafer W can be appropriately processed in other processing units.

  Furthermore, since the shared arm 150 is disposed between the processing units 130 and 131, the shared arm 150 can move to another processing unit 131 even if the upper cup 223 is raised in one processing unit 130. In addition, even if the upper cup 223 is raised in another processing unit 131, the shared arm 150 can move to one processing unit 130.

  Therefore, during the cleaning of the wafer W using the mist-like rinse liquid from the first rinse liquid nozzle 182 or the liquid rinse liquid from the second rinse liquid nozzle 183 in one processing unit 130. In the other processing unit 131, the wafer W is developed using the first developer from the first developer nozzle 151 or the second developer from the second developer nozzle 152. it can. Alternatively, while the wafer W is developed using the first developer or the second developer in one processing unit 130, the wafer W can be cleaned using the rinse liquid in the other processing unit 131.

  In addition, since the air hole 233 is formed in the lower part of the internal cup 221, the atmosphere in the accommodation space 231 can be appropriately exhausted from the gas-liquid separator 225. For this reason, the flow of the airflow of one direction can be formed in the accommodation space 231, and the airflow in the cup body 220 can be stabilized.

  Further, exhaust pipes 122 and 122 are connected to the bottom surface of the processing container 120 between the processing units 130 and 131 and the standby unit 154 of the developer nozzles 151 and 152, respectively. Exhaust pipes 122 having different atmospheres in the spaces where the portions 130 and 131 exist are exhausted. Thereby, it is possible to prevent the airflow from being disturbed between the processing units 130 and 131, and for example, the atmosphere of one processing unit 130 can be reliably prevented from flowing into the other processing unit 131. Therefore, the developing process of the wafer W can be performed more appropriately in the developing device 30.

  In the above embodiment, the first developer nozzle 151 and the second developer nozzle 152 are configured so that the first developer discharge direction and the second developer discharge direction are opposite to each other in plan view. However, as shown in FIG. 16, the discharge direction of the first developer and the discharge direction of the second developer in plan view may be the same. That is, the first developer nozzle 151 and the second developer nozzle 152 are arranged so that the first discharge port 160 and the second discharge port 161 are in the same direction. Note that the structures of the first developer nozzle 151 and the second developer nozzle 152 are the same as the structures of the first developer nozzle 151 and the second developer nozzle 152 of the above embodiment. Description is omitted.

  In such a case, when developing the wafer W using the first developer, the first developer nozzle 151 is centered from the outer periphery of the wafer W (the right outer periphery in FIG. 17) as shown in FIG. The first developer is discharged onto the wafer W from the first developer nozzle 151 while moving to the portion. At this time, the discharge direction of the first developer discharged from the first developer nozzle 151 (shaded arrow in FIG. 17) is the same direction as the rotation direction of the wafer W in plan view.

  On the other hand, when developing the wafer W using the second developer, the second developer nozzle 152 is moved from the outer peripheral portion (left outer peripheral portion in FIG. 18) of the wafer W to the central portion as shown in FIG. The second developer is discharged onto the wafer W from the second developer nozzle 152. At this time, the rotation direction of the wafer W is opposite to the rotation direction of the wafer W in the development processing using the first developer described above. The discharge direction of the second developer discharged from the second developer nozzle 152 (shaded arrow in FIG. 18) is the same direction as the rotation direction of the wafer W in plan view.

  As described above, even when the discharge direction of the first developer from the first developer nozzle 151 and the discharge direction of the second developer from the second developer nozzle 152 are the same in plan view, By changing the rotation direction of the wafer W in the developing process using the first developing solution and the developing process using the second developing process to be opposite directions, the discharge direction of the first developer and the second developing solution The ejection direction and the rotation direction of the wafer W are the same in a plan view. Therefore, both the first developer and the second developer can be smoothly diffused on the wafer W.

  In the developing device 30 of the above embodiment, a partition wall 300 may be provided between the two processing units 130 and 131 as shown in FIG. The partition 300 is arranged in the processing container 120 so as to partition a space where the processing units 130 and 131 exist. The partition wall 300 is formed with a passage hole 301 through which the shared arm 150, the first developer nozzle 151, and the second developer nozzle 152 can pass. In such a case, for example, the atmosphere of one processing unit 130 can be reliably prevented from flowing into the other processing unit 131. Therefore, the developing process of the wafer W can be performed more appropriately in the developing device 30.

  In the above embodiment, the developing devices 30 and 31 are described as the substrate processing apparatus. However, the present invention can be applied to other substrate processing apparatuses. For example, a substrate surface treatment such as a cleaning apparatus or an etching apparatus provided with a nozzle that discharges a rinsing liquid or the like to the wafer W in a mist state and a nozzle that discharges a chemical liquid such as ammonia hydrogen peroxide or hydrofluoric acid to the wafer W in a liquid state. The present invention can also be applied to an apparatus. The substrate processing method of the present invention is not limited to the development processing of the above embodiment, and can be applied to other cleaning processing and etching processing.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Coating | development processing system 30, 31 Developing apparatus 122 Exhaust pipe 130, 131 Processing part 150 Shared arm 151 1st developing solution nozzle 152 2nd developing solution nozzle 160 1st discharge port 161 2nd discharge port 182, 200 First rinse liquid nozzle 183, 201 Second rinse liquid nozzle 210 Spin chuck 220 Cup body 221 Internal cup 222 Lower cup 223 Upper cup 230 Lifting drive unit 231 Accommodating space 233 Venting hole 240 Control unit 300 Partition 301 Passing hole W Wafer

Claims (17)

A substrate processing apparatus,
A plurality of processing units including a rotation holding unit that holds and rotates the substrate, and a cup body that is provided so as to surround a side of the substrate held by the rotation holding unit,
A first processing liquid nozzle for discharging a first processing liquid onto the substrate held by the rotation holding unit;
A second processing liquid nozzle for discharging a second processing liquid onto the substrate held by the rotation holding unit;
A support member that is movable relative to the plurality of processing units and supports both the first processing liquid nozzle and the second processing liquid nozzle;
The discharge direction of the first treatment liquid discharged obliquely downward from the first treatment liquid nozzle and the discharge direction of the second treatment liquid discharged obliquely downward from the second treatment liquid nozzle are in plan view. Each of the substrate processing apparatuses is in the same direction as the rotation direction of the substrate held by the rotation holding unit. The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are opposite in a plan view. Supported,
The rotation holding member so that the rotation direction of the substrate when discharging the first treatment liquid onto the substrate is the same as the rotation direction of the substrate when discharging the second treatment liquid onto the substrate. The substrate processing apparatus according to claim 1, further comprising a control unit that controls. The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are the same in a plan view. Supported,
The rotation holding member so that the rotation direction of the substrate when discharging the first processing liquid onto the substrate is opposite to the rotation direction of the substrate when discharging the second processing liquid onto the substrate. The substrate processing apparatus according to claim 1, further comprising a control unit that controls. The substrate processing apparatus according to claim 1, further comprising a rinsing liquid nozzle that discharges a mist-like rinsing liquid on the substrate held by the rotation holding unit. The said processing part is provided in two places, The said supporting member is arrange | positioned between the said two processing parts, The substrate processing apparatus in any one of Claims 1-4 characterized by the above-mentioned. The substrate processing apparatus according to claim 5, wherein the atmosphere in the space in which each processing unit exists is exhausted from different exhaust pipes. The substrate according to claim 5 or 6, wherein a partition wall for partitioning a space in which each processing unit exists and allowing the support member to pass therethrough is provided between the two processing units. Processing equipment. The cup body has an upper cup and a lower cup,
The substrate processing apparatus according to claim 1, wherein the upper cup is movable in a vertical direction with respect to the lower cup. An inner cup is provided inside the lower cup,
An accommodation space for accommodating the upper cup is formed between the lower cup and the inner cup,
The substrate processing apparatus according to claim 8, wherein a vent hole for allowing air in the accommodation space to flow is formed in a lower part of the inner cup. The first processing solution is a developer used for a color resist,
The substrate processing apparatus according to claim 1, wherein the second processing solution is a developer used for a microlens resist. A substrate processing method using a substrate processing apparatus,
The substrate processing apparatus includes:
A plurality of processing units including a rotation holding unit that holds and rotates the substrate, and a cup body that is provided so as to surround a side of the substrate held by the rotation holding unit,
A first processing liquid nozzle for discharging a first processing liquid onto the substrate held by the rotation holding unit;
A second processing liquid nozzle for discharging a second processing liquid onto the substrate held by the rotation holding unit;
A support member that is movable relative to the plurality of processing units and supports both the first processing liquid nozzle and the second processing liquid nozzle;
The substrate processing method includes a first processing step of processing a substrate with the first processing liquid, and a second processing step of processing the substrate with the second processing liquid,
In the first processing step, the substrate held by the rotation holding unit is rotated, and the second processing liquid nozzle is positioned forward in the movement direction of the first processing liquid nozzle. While moving one processing liquid nozzle in the radial direction of the substrate, the first processing liquid is transferred from the first processing liquid nozzle onto the substrate so that the ejection direction is the same as the rotation direction of the substrate in plan view. Discharge
In the second processing step, the substrate held by the rotation holding unit is rotated, and the first processing liquid nozzle is positioned forward in the movement direction of the second processing liquid nozzle. The second processing liquid nozzle is moved from the second processing liquid nozzle onto the substrate so that the ejection direction is the same as the rotation direction of the substrate in plan view while moving the second processing liquid nozzle in the radial direction of the substrate. The substrate processing method characterized by discharging. The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are opposite in a plan view. Supported,
12. The substrate processing method according to claim 11, wherein the rotation direction of the substrate in the first processing step and the rotation direction of the substrate in the second processing step are the same direction. The first treatment liquid nozzle and the second treatment liquid nozzle are attached to the support member so that the discharge direction of the first treatment liquid and the discharge direction of the second treatment liquid are the same in a plan view. Supported,
The substrate processing method according to claim 11, wherein the rotation direction of the substrate in the first processing step is opposite to the rotation direction of the substrate in the second processing step. The substrate processing apparatus has a rinsing liquid nozzle that discharges a mist-like rinsing liquid onto the substrate held by the rotation holding unit,
The processing unit is provided at two locations, and the support member is disposed between the two processing units,
The cup body includes an upper cup movable in a vertical direction, and a lower cup capable of accommodating the upper cup,
In one of the processing units, while the upper cup is raised, the substrate held by the rotation holding unit is rotated, and the rinse liquid nozzle is moved in the radial direction of the substrate while moving the rinse liquid nozzle from the rinse liquid nozzle. While washing the substrate by discharging the rinse liquid onto the substrate,
The said 1st process or the said 2nd process is performed in the state which lowered | hung the said upper cup and accommodated in the said lower cup in the said other process part, The any one of Claims 11-13 characterized by the above-mentioned. A substrate processing method according to claim 1. The first processing solution is a developer used for a color resist,
The substrate processing method according to claim 11, wherein the second processing solution is a developer used for a microlens resist. A program that operates on a computer of a control unit that controls the substrate processing apparatus in order to cause the substrate processing apparatus to execute the substrate processing method according to claim 11. A readable computer storage medium storing the program according to claim 16.

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