JP2012015203A - Semiconductor device, and method of manufacturing the same - Google Patents

Semiconductor device, and method of manufacturing the same Download PDF

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Publication number
JP2012015203A
JP2012015203A JP2010148093A JP2010148093A JP2012015203A JP 2012015203 A JP2012015203 A JP 2012015203A JP 2010148093 A JP2010148093 A JP 2010148093A JP 2010148093 A JP2010148093 A JP 2010148093A JP 2012015203 A JP2012015203 A JP 2012015203A
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Prior art keywords
lead
island
semiconductor device
metal
tip
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JP2010148093A
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Japanese (ja)
Inventor
Shigeji Yoshiba
茂治 吉羽
Masakazu Watanabe
昌和 渡辺
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On Semiconductor Trading Ltd
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On Semiconductor Trading Ltd
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Priority to JP2010148093A priority Critical patent/JP2012015203A/en
Publication of JP2012015203A publication Critical patent/JP2012015203A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To solve a problem that, although a base part of a lead is clamped by a clamper of a bonding device when ultrasonic wave bonding of a metal ribbon is performed, wobbling or jerk at a connection part of the lead may cause reduction in an adhesive strength of the metal ribbon and reduction in bondability.SOLUTION: A projection that projects from an tip part of a first lead to a region between an island and a tip of a second lead, is provided to the tip part of the first lead. The projection is partially coated with the same metal as a metal coating the tip of the second lead. A pin part of the first lead and the projection are pressed by a clamper at the time of bonding. Thereby, wobbling or jerk at a connection part of the lead can be prevented.

Description

本発明は半導体装置およびその製造方法に関し、特に、半導体素子の電極とリードとを接続する金属リボンを有する半導体装置およびその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a semiconductor device having a metal ribbon for connecting an electrode of a semiconductor element and a lead and a manufacturing method thereof.

リードフレームに搭載した半導体素子の電極と、リードフレームの外部導出リードとを電気的に接続する手段としては、従来より金ワイヤで両者間を接続する手法が用いられてきたが、近年特に電力用途の半導体素子の場合等であって、電流経路の抵抗成分の減少を目的として、金ワイヤに代えてアルミ薄板による金属リボンを用いる手法が実用化されている（例えば、特許文献１参照）。   As a means for electrically connecting the electrode of the semiconductor element mounted on the lead frame and the externally derived lead of the lead frame, a method of connecting the two with a gold wire has been conventionally used. For example, in the case of the semiconductor element, a technique using a metal ribbon made of an aluminum thin plate instead of a gold wire has been put into practical use for the purpose of reducing the resistance component of the current path (see, for example, Patent Document 1).

図８を参照して、従来の半導体装置１００について説明する。この半導体装置１００は、２個の縦型ＭＯＳＦＥＴ素子を１つのシリコンチップに形成し、ＳＯＰ８ピンタイプのリードフレームに搭載した例を示している。
図８（Ａ）は半導体装置１００の平面図であり、図８（Ｂ）は製造工程の一部を示す平面図である。 A conventional semiconductor device 100 will be described with reference to FIG. This semiconductor device 100 shows an example in which two vertical MOSFET elements are formed on one silicon chip and mounted on an SOP 8-pin type lead frame.
FIG. 8A is a plan view of the semiconductor device 100, and FIG. 8B is a plan view showing a part of the manufacturing process.

図８（Ａ）を参照して、従来の半導体装置１００は、アイランド１０１と、アイランド１０１の上面に固着された半導体素子１１０と、リード１０２Ａ、１０２Ｂ、１０３、１０４と、半導体素子１１０とリード１０２とを接続する金属リボン（例えばアルミニウム（Ａｌリボン）１０５Ａ、１０５Ｂを有している。これらの構成要素は更に不図示の封止樹脂により一体的に被覆されている。   Referring to FIG. 8A, a conventional semiconductor device 100 includes an island 101, a semiconductor element 110 fixed to the upper surface of the island 101, leads 102A, 102B, 103, 104, a semiconductor element 110, and a lead 102. (For example, aluminum (Al ribbon) 105A and 105B). These components are further integrally covered with a sealing resin (not shown).

半導体素子１１０の主面にはソース電極１０６Ａ、１０６Ｂが設けられ、金属リボン１０５Ａ、１０５Ｂの一端はそれぞれソース電極１０６Ａ、１０６Ｂに超音波ボンディングなどより固着され、他端はリード１０２に同じく超音波ボンディングなどにより固着される。これにより半導体素子１１０のソース電極１０６Ａ、１０６Ｂとリード１０２Ａ、１０２Ｂが、各々電気的に接続される。   Source electrodes 106A and 106B are provided on the main surface of the semiconductor element 110. One end of each of the metal ribbons 105A and 105B is fixed to the source electrodes 106A and 106B by ultrasonic bonding or the like, and the other end is also ultrasonically bonded to the lead 102. It is fixed by etc. As a result, the source electrodes 106A and 106B of the semiconductor element 110 and the leads 102A and 102B are electrically connected to each other.

図８（Ｂ）を参照して、この半導体装置１００の製造工程において、個別にダイシングされた半導体素子１１０は、リードフレームのアイランド１０１上に固着され、ボンディング装置にて電極１０６Ａ、１０６Ｂとリード１０２Ａ、１０２Ｂの電気的接続が行われる。   Referring to FIG. 8B, in the manufacturing process of semiconductor device 100, individually diced semiconductor element 110 is fixed on island 101 of the lead frame, and electrodes 106A, 106B and leads 102A are bonded by a bonding apparatus. , 102B are electrically connected.

すなわち、金属リボン１０５Ａを電極１０６Ａ上に超音波接合した後、リード１０２Ａの接続部（ポスト）１１１と接合するため金属リボン１０５Ａを支持するキャピラリをリード１０２Ａ方向に移動させる。このとき、安定したボンディングを行うため、ボンディング装置のクランパ１２０でリード１０２Ａの接続部１１１以外のピン部１０２Ｐ（リードフレームの外枠との付け根に近い部分）を押下しつつ、金属リボン１０５Ａをリード１０２と固着する。同様に金属リボン１０５Ｂを電極１０６Ｂとリード１０２に固着する。   That is, after the metal ribbon 105A is ultrasonically bonded onto the electrode 106A, the capillary that supports the metal ribbon 105A is moved in the direction of the lead 102A in order to bond the connection portion (post) 111 of the lead 102A. At this time, in order to perform stable bonding, the metal ribbon 105A is read while pressing down the pin portion 102P (portion close to the base of the lead frame) other than the connection portion 111 of the lead 102A with the clamper 120 of the bonding apparatus. It adheres to 102. Similarly, the metal ribbon 105B is fixed to the electrode 106B and the lead 102.

特開２００９−２０６４８２号公報（第２０頁、図３）JP 2009-206482 A (page 20, FIG. 3)

金属リボン１０５Ａ、１０５Ｂは、Ａｕからなる金属細線に比べて大きく素材的にも硬いので、リード接続部１１１との良好な接着強度を得るためには、接着部分にキャピラリを介して十分な超音波エネルギーを伝達することが不可欠となる。この場合、リード１０２Ａ，１０３の根元部分１０２Ｐをクランプする従来の手法では、接続部１１１、１１２の先端部分がクランプに対しては開放された状態でのボンディングとなるので、金線のボンディングには十分であっても、金属リボンのボンディングに対しては、接続部１１１のぐらつき、がたつきによる超音波エネルギーの逃げが許容できない範囲となり、結果として金属リボン１０５Ａ、１０５Ｂの接着強度の低下やボンダビリティの低下を招くことになる。   Since the metal ribbons 105A and 105B are larger and harder than the fine metal wires made of Au, in order to obtain a good bonding strength with the lead connecting portion 111, a sufficient ultrasonic wave is applied to the bonding portion via a capillary. It is essential to transmit energy. In this case, in the conventional method of clamping the root portions 102P of the leads 102A and 103, bonding is performed with the tip portions of the connection portions 111 and 112 open to the clamp. Even if it is sufficient, the bonding of the metal ribbon is not allowed to escape due to the wobbling and rattling of the connecting portion 111. As a result, the bonding strength of the metal ribbons 105A and 105B is reduced and the bonder is not bonded. This will lead to a decrease in performance.

本発明はかかる課題に鑑みてなされ、第１に、主面に電極が配置された半導体素子と、該半導体素子が固着されるアイランドと、それぞれが該アイランドと離間して対向配置され、前記半導体素子と電気的に接続されて一部が外部に導出する第１リードおよび第２リードと、一端が前記半導体素子の前記電極と固着し、他端が前記第１リードと固着する金属リボンとを備え、前記第１リードの先端部分に、当該先端部分から前記アイランドと前記第２リードの先端との間の領域にまで突出する突起部を設け、当該突起部に、前記第２リードの先端部分に施した金属メッキと同じ金属メッキを、部分的に施すことにより解決するものである。   The present invention has been made in view of such problems. First, a semiconductor element in which an electrode is disposed on a main surface, an island to which the semiconductor element is fixed, and a semiconductor element that is spaced apart from the island are disposed opposite to each other. A first lead and a second lead that are electrically connected to the element and partially lead out to the outside; a metal ribbon that has one end fixed to the electrode of the semiconductor element and the other end fixed to the first lead; Provided with a protrusion that protrudes from the tip portion to a region between the island and the tip of the second lead, and the tip portion of the second lead is provided at the tip portion of the first lead. The problem is solved by partially applying the same metal plating as that applied to.

第２に、アイランドと、それぞれ前記アイランドと離間して対向する第１リードおよび第２リードと、前記アイランドの主面に配置された半導体素子を有し、該半導体素子の電極と、前記第１リードとを金属リボンにて接続する工程を備えた半導体装置の製造方法であって、前記第１リードの先端部分に、当該先端部分から前記アイランドと前記第２リードの先端との間の領域にまで突出する突起部を設け、当該突起部に、前記第２リードの先端部分に施した金属メッキと同じ金属メッキを、部分的に施しており、前記突起部の上をクランパの凸部で押圧した状態で前記金属リボンの一端を前記電極に固着し、他端を前記第１リードの先端部分に固着することにより解決するものである。   Secondly, the semiconductor device includes an island, a first lead and a second lead that are spaced apart from and opposed to the island, and a semiconductor element disposed on a main surface of the island, the electrode of the semiconductor element, and the first lead A method of manufacturing a semiconductor device comprising a step of connecting a lead with a metal ribbon, wherein the lead is connected to a tip portion of the first lead and from the tip portion to a region between the island and the tip of the second lead. A protrusion that protrudes to the top of the second lead is partially applied to the protrusion, and the protrusion on the clamper is pressed onto the protrusion. In this state, one end of the metal ribbon is fixed to the electrode, and the other end is fixed to the tip portion of the first lead.

本発明によれば、以下の効果が得られる。   According to the present invention, the following effects can be obtained.

第１に、金属リボンが固着されるリード（第１リード）の接続部から、対向するアイランドの辺に沿って突出する突起部を設け、突起部をアイランドと、金属細線が接続されるリード（第２リード）との間に配置し、突起部と第２リードの先端に同じ厚みの銀メッキ層を設けることにより、両者の高さを一定とし、これにより安定したボンディングを可能とし、第１リードの接続部の変形や破損のない半導体装置を提供できる。   First, a projecting portion that protrudes from the connecting portion of the lead (first lead) to which the metal ribbon is fixed is provided along the side of the opposing island, and the projecting portion is connected to the island and the lead to which the metal thin wire is connected ( And a silver plating layer having the same thickness at the tip of the protrusion and the second lead, thereby making the height of both constant, thereby enabling stable bonding. It is possible to provide a semiconductor device in which lead connection portions are not deformed or damaged.

第１リードの突起部は、金属リボンのボンディング時に、クランパの凸部によって押圧される。つまり第１リードは、外部に導出するピン部のみならず、幅広の金属リボンが固着され、面積が大きい第１リードの接続部の近傍をクランパで押さえることができるので、金属リボンのボンディングを安定して行うことができる。   The protruding portion of the first lead is pressed by the convex portion of the clamper when the metal ribbon is bonded. In other words, not only the pin part leading out to the outside, but also a wide metal ribbon is fixed, and the vicinity of the connection part of the first lead having a large area can be held by the clamper, so that the bonding of the metal ribbon is stable. Can be done.

第１リードの接続部は、金属リボンの固着に必要十分な領域しか確保できないため、突起部は、アイランドと第２リードの先端の間に突出するように設ける。第２リードの先端は、金属細線（例えば金（Ａｕワイヤ）が固着される接続部であり、接着性を向上させるため主面に銀メッキ層が設けられている。   Since the connection portion of the first lead can ensure only a necessary and sufficient region for fixing the metal ribbon, the protrusion is provided so as to protrude between the island and the tip of the second lead. The tip of the second lead is a connecting portion to which a fine metal wire (for example, gold (Au wire)) is fixed, and a silver plating layer is provided on the main surface in order to improve adhesion.

本実施形態ではクランパの凸部で第１リードの突起部を押厚するが、その領域は極小の領域であり、押さえ（凸部）の位置調整の精度がシビアである。つまり凸部の押圧位置がずれると、第２リードの先端（接続部）を押圧する可能性も考えられる。また、アイランド主面に銀メッキ層が施される場合も、同様である。この場合、突起部がリードフレーム基材（例えば銅フレーム）のままでは、銀メッキ層が施された第２リード（又はアイランド）と高さが異なり、クランパ（凸部）による押さえが不十分となる。   In this embodiment, the protrusion of the first lead is pressed by the convex portion of the clamper, but this region is a minimal region, and the accuracy of position adjustment of the presser (protrusion) is severe. That is, if the pressing position of the convex portion is shifted, there is a possibility of pressing the tip (connecting portion) of the second lead. The same applies when a silver plating layer is applied to the main surface of the island. In this case, if the projecting portion remains the lead frame base material (for example, a copper frame), the height is different from the second lead (or island) to which the silver plating layer is applied, and pressing by the clamper (convex portion) is insufficient. Become.

本実施形態では、突起部に、第２リードの接続部（およびアイランド）と同等の膜厚の銀メッキ層を設けることにより、凸部の押圧位置が第２リード（またはアイランド）にずれた場合であっても確実な押さえが可能となる。   In this embodiment, when the protruding portion is provided with a silver plating layer having a film thickness equivalent to the connection portion (and island) of the second lead, the pressing position of the convex portion is shifted to the second lead (or island). Even so, it is possible to hold down reliably.

第２に、突起部はリード側に突出し、封止樹脂で完全に封止されるため、外部に露出することがない。従って、押さえ用の突起部を設けることによる、半導体装置の耐圧や耐湿の劣化を回避できる。   Second, the protruding portion protrudes to the lead side and is completely sealed with the sealing resin, so that it is not exposed to the outside. Accordingly, it is possible to avoid deterioration of the breakdown voltage and moisture resistance of the semiconductor device due to the provision of the pressing protrusion.

本発明の製造方法によれば、クランパの凸部で第１リードの突起部を押さえることにより、幅広の金属リボンが固着される第１リードの接続部の振動等を防止し、安定した金属リボンの固着が可能な半導体装置の製造方法を提供できる。   According to the manufacturing method of the present invention, the protrusion of the first lead is pressed by the convex portion of the clamper, thereby preventing the vibration of the connecting portion of the first lead to which the wide metal ribbon is fixed, and the stable metal ribbon. It is possible to provide a method of manufacturing a semiconductor device that can be fixed.

また、突起部に第２リード（およびアイランド）と同等の膜厚の銀メッキ層を設けることにより、凸部が第２リードまたはアイランドにずれた場合であっても、これらと高さを同等にできるので、凸部で確実に押さえることができ、安定したボンディングが可能となる。   In addition, by providing a silver plating layer with a film thickness equivalent to that of the second lead (and island) on the protrusion, even if the convex portion is displaced to the second lead or island, the height thereof is made equivalent. Therefore, it can be surely pressed by the convex portion, and stable bonding is possible.

本発明の第１の実施形態の半導体装置を説明する（Ａ）平面図、（Ｂ）要部拡大図、（Ｃ）断面図である。BRIEF DESCRIPTION OF THE DRAWINGS (A) Top view explaining the semiconductor device of the 1st Embodiment of this invention, (B) The principal part enlarged view, (C) It is sectional drawing. 本発明の第２の実施形態の半導体装置を説明する平面図である。It is a top view explaining the semiconductor device of the 2nd Embodiment of this invention. 本発明の半導体装置の製造方法を説明するための平面図である。It is a top view for demonstrating the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を説明するための平面図である。It is a top view for demonstrating the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を説明するための平面図である。It is a top view for demonstrating the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法を説明するための平面図である。It is a top view for demonstrating the manufacturing method of the semiconductor device of this invention. 従来技術を説明するための平面図である。It is a top view for demonstrating a prior art.

本発明の実施形態を図１から図７を参照して詳細に説明する。図１は、第１の実施形態の半導体装置１を示す図であり、図１（Ａ）が半導体装置１の平面図であり、図１（Ｂ）は図１（Ａ）要部拡大図であり、図１（Ｃ）は図１（Ａ）のａ−ａ線断面図である。   An embodiment of the present invention will be described in detail with reference to FIGS. FIG. 1 is a diagram illustrating a semiconductor device 1 according to the first embodiment, FIG. 1A is a plan view of the semiconductor device 1, and FIG. 1B is an enlarged view of a main part of FIG. 1C is a cross-sectional view taken along the line aa in FIG.

図１を参照して、半導体装置１は、半導体素子２０と、アイランド１４と、第１リード１１と、突起部１５と、第２リード１２と、金属リボン２１と、封止樹脂２４とを有する。   Referring to FIG. 1, the semiconductor device 1 includes a semiconductor element 20, an island 14, a first lead 11, a protrusion 15, a second lead 12, a metal ribbon 21, and a sealing resin 24. .

半導体素子２０としては、ＭＯＳＦＥＴ（Metal-Oxide Semiconductor Field Effect Transistor）、バイポーラトランジスタ、ＩＧＢＴ（Insulated Gate Bipolar Transistor）、ＩＣ、ダイオード等を採用可能である。ここでは、半導体素子２０としてＭＯＳＦＥＴを採用した場合を例に説明する。半導体素子２０の主面（上面）にはソース電極２５およびゲートパッド電極２６が設けられ、他の主面（下面）にドレイン電極（不図示）が設けられる。また、半導体素子２０としてバイポーラトランジスタが採用されると、半導体素子２０の主面にベース電極およびエミッタ電極が設けられ、下面にコレクタ電極が設けられる。   As the semiconductor element 20, a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor), a bipolar transistor, an IGBT (Insulated Gate Bipolar Transistor), an IC, a diode, or the like can be employed. Here, a case where a MOSFET is employed as the semiconductor element 20 will be described as an example. A source electrode 25 and a gate pad electrode 26 are provided on the main surface (upper surface) of the semiconductor element 20, and a drain electrode (not shown) is provided on the other main surface (lower surface). Further, when a bipolar transistor is employed as the semiconductor element 20, a base electrode and an emitter electrode are provided on the main surface of the semiconductor element 20, and a collector electrode is provided on the lower surface.

半導体素子２０のソース電極２５は、金属リボン２１を介して第１リード１１と電気的に接続する。金属リボン２１は、例えばアルミニウム（Ａｌ）リボンであり、一端が半導体素子２０のソース電極２５と固着し、他端が第１リード１１の接続部１７と固着する。また、半導体素子２０のゲートパッド電極２６は、金属細線２２を介して第２リード１２と接続する。   The source electrode 25 of the semiconductor element 20 is electrically connected to the first lead 11 via the metal ribbon 21. The metal ribbon 21 is, for example, an aluminum (Al) ribbon, and one end is fixed to the source electrode 25 of the semiconductor element 20 and the other end is fixed to the connection portion 17 of the first lead 11. Further, the gate pad electrode 26 of the semiconductor element 20 is connected to the second lead 12 through the fine metal wire 22.

半導体素子２０の下面は、半田等の導電性の固着材１９を介してアイランド１４の主面に固着される（図１（Ｃ））。ここで、半導体素子２０の下面が電極として機能しない場合は、エポキシ樹脂等を主材料とする絶縁性の固着材を介して半導体素子２０がアイランド１４の上面に固着されても良い。   The lower surface of the semiconductor element 20 is fixed to the main surface of the island 14 through a conductive fixing material 19 such as solder (FIG. 1C). Here, when the lower surface of the semiconductor element 20 does not function as an electrode, the semiconductor element 20 may be fixed to the upper surface of the island 14 via an insulating fixing material mainly composed of epoxy resin or the like.

アイランド１４および第１リード１１、第２リード１２、第３リード１３は例えば銅もしくは銅を主成分とする合金材料からなる素材からなるリードフレーム基材をエッチングまたは打ち抜き加工して設けられる。アイランド１４は、一例として、上面に実装される半導体素子２０よりも若干大きい程度である。第１リード１１、第２リード１２は、アイランド１４と離間して対向配置される。第１リード１１、第２リード１２は一端がアイランド１４の近傍に位置し、他端が封止樹脂２４から外部に露出している。第１リード１１のアイランド１４に接近する一端は幅広の接続部１７となる。第１リード１１の接続部１７は、Ａｌリボン２１の固着を可能とする接着面積を提供するように、第１リード１１の他の部分よりも幅広に形成されている。第１リード１１の根元部分（封止樹脂２４から外部に導出される部分）がピン部１１Ｐである。第２リード１２のアイランド１４に接近する一端は金属細線２２が固着する接続部１８となる。第２リード１２の根元部分（封止樹脂２４から外部に導出される部分）がピン部１２Ｐである。第３リード１３は、一端がアイランド１４に連続し、他端が封止樹脂２４から外部に導出され、ピン部１３Ｐとなる。   The island 14, the first lead 11, the second lead 12, and the third lead 13 are provided by etching or punching a lead frame base material made of, for example, copper or an alloy material mainly composed of copper. For example, the island 14 is slightly larger than the semiconductor element 20 mounted on the upper surface. The first lead 11 and the second lead 12 are spaced apart from the island 14. One end of the first lead 11 and the second lead 12 is located near the island 14, and the other end is exposed to the outside from the sealing resin 24. One end of the first lead 11 that approaches the island 14 becomes a wide connecting portion 17. The connecting portion 17 of the first lead 11 is formed wider than other portions of the first lead 11 so as to provide an adhesive area that allows the Al ribbon 21 to be fixed. The base portion of the first lead 11 (the portion led out from the sealing resin 24) is the pin portion 11P. One end of the second lead 12 that approaches the island 14 serves as a connection portion 18 to which the fine metal wire 22 is fixed. The base portion of the second lead 12 (the portion led out from the sealing resin 24) is the pin portion 12P. The third lead 13 has one end continuous to the island 14 and the other end led out from the sealing resin 24 to become the pin portion 13P.

封止樹脂２４の側面から外部に露出する第１リード１１、第２リード１２、第３リード１３の他端（ピン部）は、折り曲げ加工される。第１リード１１、第２リード１２の先端（接続部１７、１８）、およびアイランド１４は、第１リード１１、第２リード１２の他端からの高さＨが同等である（図１（Ｃ））。すなわち、第１リード１１の接続部１７の主面Ｓｆ１と、第２リード１２の接続部１８の主面Ｓｆ２は、略同一平面上にある。   The other ends (pin portions) of the first lead 11, the second lead 12, and the third lead 13 exposed to the outside from the side surface of the sealing resin 24 are bent. The first lead 11 and the tip of the second lead 12 (connection portions 17 and 18) and the island 14 have the same height H from the other end of the first lead 11 and the second lead 12 (FIG. 1C )). That is, the main surface Sf1 of the connecting portion 17 of the first lead 11 and the main surface Sf2 of the connecting portion 18 of the second lead 12 are substantially on the same plane.

半導体素子２０がディスクリート型のトランジスタである場合は、第１リード１１、第２リード１２とアイランド１４の裏面に連続する第３リード１３が外部接続端子として機能する。一例として、半導体素子２０がＭＯＳＦＥＴの場合は、第１リード１１がソース電極２５と接続され、第２リード１２がゲートパッド電極２６と接続され、アイランド１４がドレイン電極と接続される。   When the semiconductor element 20 is a discrete transistor, the first lead 11, the second lead 12, and the third lead 13 continuing to the back surface of the island 14 function as external connection terminals. As an example, when the semiconductor element 20 is a MOSFET, the first lead 11 is connected to the source electrode 25, the second lead 12 is connected to the gate pad electrode 26, and the island 14 is connected to the drain electrode.

金属リボン２１は、厚みが例えば０．１ｍｍ程度で幅が１．０ｍｍ程度のアルミニウムもしくはアルミニウムを主成分とする合金からなる導電材料で構成されたリボン状の配線材料である。金属リボン２１は、例えば金属板をプレス加工した金属接続板（クリップ）と比較してその厚みが薄く、ボンディング装置に対しては長尺リボン状の材料として供給され、キャピラリから必要量が繰り出されてそこで切断される。つまり通常の金属細線と同様に、例えば山状のボンディングループを形成して半導体素子２０と第１リード１１とを接続することが可能である。金属リボン２１の一端は半導体素子２０のアルミ材料からなるソース電極２５と、超音波接合（超音波ボンディング）によって同種金属接合（アルミ−アルミ）により接続される。また金属リボン２１の接合方式としてレーザ接合も採用できる。   The metal ribbon 21 is a ribbon-like wiring material made of a conductive material made of aluminum having a thickness of about 0.1 mm and a width of about 1.0 mm or an alloy containing aluminum as a main component. The metal ribbon 21 is thinner than, for example, a metal connection plate (clip) obtained by pressing a metal plate. The metal ribbon 21 is supplied to the bonding apparatus as a long ribbon-like material, and a necessary amount is fed from the capillary. And cut off there. That is, like a normal fine metal wire, for example, a mountain-shaped bonding loop can be formed to connect the semiconductor element 20 and the first lead 11. One end of the metal ribbon 21 is connected to the source electrode 25 made of an aluminum material of the semiconductor element 20 by the same kind of metal bonding (aluminum-aluminum) by ultrasonic bonding (ultrasonic bonding). Laser bonding can also be employed as a method for bonding the metal ribbon 21.

金属リボン２１の他端は、リードフレーム基材である銅が露出した第１リード１１の接続部１７に、超音波接合（超音波ボンディング）により固着される。   The other end of the metal ribbon 21 is fixed by ultrasonic bonding (ultrasonic bonding) to the connection portion 17 of the first lead 11 where the copper that is the lead frame base material is exposed.

金属リボン２１は、直径が０．５ｍｍ程度の金属細線と比較すると、電流が流れる方向に対する断面積が大きい。従って、金属リボン２１を採用することにより、接続手段の電気抵抗を低減して、電流容量を増大させることができる。例えば、半導体素子２０がＭＯＳＦＥＴの場合には、ソース電極２５が金属リボン２１を介して第１リード１１と接続されることにより、オン抵抗を低減させることができる。   The metal ribbon 21 has a larger cross-sectional area with respect to the direction in which the current flows than a thin metal wire having a diameter of about 0.5 mm. Therefore, by adopting the metal ribbon 21, it is possible to reduce the electrical resistance of the connecting means and increase the current capacity. For example, when the semiconductor element 20 is a MOSFET, the on-resistance can be reduced by connecting the source electrode 25 to the first lead 11 via the metal ribbon 21.

更には、金属リボン２１は、半導体素子２０および第１リード１１と面的に接合しているので、熱の伝導が容易になり、半導体素子２０から発生した熱を金属リボン２１および第１リード１１を経由して、外部に良好に伝導させて放出させることができる。   Furthermore, since the metal ribbon 21 is joined to the semiconductor element 20 and the first lead 11 in a surface, heat conduction is facilitated, and the heat generated from the semiconductor element 20 is transferred to the metal ribbon 21 and the first lead 11. It can be made to conduct well and be released to the outside via the.

封止樹脂２４は、半導体素子２０、金属リボン２１、金属細線２２、第１リード１１、第２リード１２、アイランド１４等を一括して被覆して全体を機械的に支持する機能を有する。封止樹脂２４の材料としては、熱硬化性樹脂または熱可塑性樹脂から成り、放熱性を向上させるために粒子状または繊維状のフィラーが混入されても良い。   The sealing resin 24 has a function of covering the semiconductor element 20, the metal ribbon 21, the thin metal wire 22, the first lead 11, the second lead 12, the island 14, etc. collectively and mechanically supporting the whole. The sealing resin 24 is made of a thermosetting resin or a thermoplastic resin, and particulate or fibrous fillers may be mixed in order to improve heat dissipation.

図１（Ｂ）を参照して、本実施形態では、第１リード１１にこれと連続した突起部１５が設けられる。突起部１５は、アイランド１４と第２リード１２の先端の接続部１８との間に配置され、第１リード１１の先端部分からアイランド１４と第２リード１２の先端との間の領域にまで突出する。すなわち、図１（Ｂ）に示す平面視において突起部１５の先端は、第２リード１２の接続部１８の側辺１８Ｓの延長線上付近まで達する。また、突起部１５は、第１リード１１と同様に板厚が一様なるリードフレーム基材から加工形成され、第１リード１１の接続部１７の先端部分から、対向するアイランド１４の一辺と平行に一定間隔で沿うようにして、第２リード１２の先端近傍まで形成する。このとき、第２リード１２先端の接続部１８は、従来よりもアイランド１４から後退させて両者間の距離を大きくすることにより、突起部１５を配置する空間を確保する。つまり、第１リード１１とアイランド１４との間隔よりも第２リード１２とアイランド１４との間隔が大となる。突起部１５とアイランド１４との間隔、及び突起部１５と第２リード１２先端の接続部１８との間隔は、共に打ち抜き又はエッチング加工時における最小設計寸法で設計するのが好ましい。突起部１５のアイランド１４の一辺に沿う方向の長さは、第２リード１２の幅と同等である。   With reference to FIG. 1 (B), in this embodiment, the 1st lead | read | reed 11 is provided with the projection part 15 following this. The protruding portion 15 is disposed between the island 14 and the connecting portion 18 at the tip of the second lead 12 and protrudes from the tip portion of the first lead 11 to a region between the island 14 and the tip of the second lead 12. To do. That is, in the plan view shown in FIG. 1B, the tip of the protrusion 15 reaches the vicinity of the extension line of the side 18 </ b> S of the connection portion 18 of the second lead 12. Further, the protrusion 15 is formed by processing from a lead frame base material having a uniform plate thickness like the first lead 11, and is parallel to one side of the opposing island 14 from the tip portion of the connection portion 17 of the first lead 11. Are formed up to the vicinity of the tip of the second lead 12 so as to be along at regular intervals. At this time, the connecting portion 18 at the tip of the second lead 12 is retracted from the island 14 to increase the distance between the two, thereby securing a space for arranging the protruding portion 15. That is, the distance between the second lead 12 and the island 14 is larger than the distance between the first lead 11 and the island 14. It is preferable that the distance between the protrusion 15 and the island 14 and the distance between the protrusion 15 and the connection part 18 at the tip of the second lead 12 are designed with the minimum design dimensions at the time of punching or etching. The length of the protrusion 15 in the direction along one side of the island 14 is equal to the width of the second lead 12.

尚、第１リード１１の接続部１７、第１リードの突起部１５、第２リードの接続部１８、およびアイランド１４は、それらの表面の高さＨ（図１Ｃ）が一様となるように必要箇所に曲げ加工が施されている。つまり突起部１５は、接続部１７の主面Ｓｆ１から同一平面上に延在し、第２リード１２の接続部１８の主面Ｓｆ２と略同一平面上に設けられる。   The first lead 11 connecting portion 17, the first lead protruding portion 15, the second lead connecting portion 18, and the island 14 have a uniform surface height H (FIG. 1C). Bending is applied to the necessary parts. That is, the protrusion 15 extends on the same plane from the main surface Sf1 of the connection portion 17 and is provided on the same plane as the main surface Sf2 of the connection portion 18 of the second lead 12.

突起部１５は、アイランド１４と第２リード１２の先端の接続部１８との間に配置され、図１（Ｂ）に示す平面視において突起部１５の先端は、第２リード１２の接続部１８の側辺１８Ｓの延長線上付近まで達する。   The protruding portion 15 is disposed between the island 14 and the connecting portion 18 at the tip of the second lead 12, and the leading end of the protruding portion 15 is the connecting portion 18 of the second lead 12 in the plan view shown in FIG. To the vicinity of the extension line of the side 18S.

突起部１５の主面には、ハッチングで示す位置に部分的に、電界メッキ法による厚さ３μｍ〜１０μｍの銀メッキ層３１が設けられる。一方金属リボン２１が固着される第１リード１１の接続部１７表面には、銀メッキ層３１が設けられず、リードフレーム基材である銅素材が露出する。   A silver plating layer 31 having a thickness of 3 μm to 10 μm by an electroplating method is partially provided on the main surface of the protrusion 15 at a position indicated by hatching. On the other hand, the silver plating layer 31 is not provided on the surface of the connection portion 17 of the first lead 11 to which the metal ribbon 21 is fixed, and the copper material that is the lead frame base material is exposed.

後に詳述するが、第１リード１１の突起部１５は、金属リボン２１を固着する際、図１（Ｂ）に示す一点鎖線の押圧領域Ｐがボンディング装置のクランパ（の凸部）によって押圧される。第１リード１１は、外部に導出するピン部１１Ｐに加えて金属リボン２１が固着する接続部１７近傍の突起部１５をクランパで押さえることで、接続部１７のばたつきを防止し、金属リボン２１の安定したボンディングが可能となる。Ａｌリボン２１のアルミニウムと銀メッキ層３１の銀とは接着強度が弱く、ＰＣＴ（Pressure Cooker Test）に非常に弱いため、剥がれ易い。アルミと銅素材との組合わせであれば、前記ＰＣＴにも耐える良好な接着強度を得ることが可能である。   As will be described in detail later, when the metal ribbon 21 is fixed, the projection 15 of the first lead 11 is pressed by the clamper (convex portion) of the bonding device of the bonding apparatus shown in FIG. The The first lead 11 prevents the flapping of the connecting portion 17 by pressing the protruding portion 15 in the vicinity of the connecting portion 17 to which the metal ribbon 21 is fixed in addition to the pin portion 11P led out to the outside. Stable bonding is possible. The aluminum of the Al ribbon 21 and the silver of the silver plating layer 31 have a low adhesive strength and are very weak to PCT (Pressure Cooker Test), and therefore easily peel off. If it is a combination of aluminum and a copper material, it is possible to obtain good adhesive strength that can withstand the PCT.

第２リード１２の接続部１８の主面にも銀メッキ層３２（ハッチングで示す）が設けられる。この銀メッキ層３２は、突起部１５の銀メッキ層３１と同じ厚みである。突起部１５と第２リード１２の接続部１８は、銅素材の打ち抜きと折り曲げ加工等によりその主面が同じ高さとなるように形成されている。従って、同じ厚みの銀メッキ層３１、３２が設けられた突起部１５の主面と接続部１８の主面も略同一平面上に存在する。更に本実施形態ではアイランド１４の主面にも銀メッキ層３１、３２と同等の膜厚の銀メッキ層３０が設けられる。従って突起部１５の主面と接続部１８の主面とアイランド１４の主面も略同一平面上に存在することになる。   A silver plating layer 32 (shown by hatching) is also provided on the main surface of the connecting portion 18 of the second lead 12. The silver plating layer 32 has the same thickness as the silver plating layer 31 of the protrusion 15. The projection 15 and the connecting portion 18 of the second lead 12 are formed so that their main surfaces have the same height by punching and bending a copper material. Accordingly, the main surface of the protrusion 15 provided with the silver plating layers 31 and 32 having the same thickness and the main surface of the connection portion 18 are also present on substantially the same plane. Furthermore, in the present embodiment, the silver plating layer 30 having the same thickness as the silver plating layers 31 and 32 is also provided on the main surface of the island 14. Accordingly, the main surface of the protrusion 15, the main surface of the connection portion 18, and the main surface of the island 14 are also present on substantially the same plane.

第１リード１１の接続部１７のばたつきを防止するために、突起部１５をクランパで押さえるだけであれば、第１リード１１の主面には銀メッキ層３１を設けることは避けるべきものであるところ、本実施形態では、接続部１７から離れた箇所にある突起部１５の主面には銀メッキ層３１を設ける。以下これについて説明する。   In order to prevent the connection portion 17 of the first lead 11 from flapping, if the projection 15 is only pressed by the clamper, it is to be avoided to provide the silver plating layer 31 on the main surface of the first lead 11. However, in the present embodiment, the silver plating layer 31 is provided on the main surface of the protruding portion 15 at a location away from the connection portion 17. This will be described below.

第２リード１２の接続部１８は、半導体素子２０のゲートパッド電極２６に接続する金属細線（例えば金（Ａｕ）ワイヤ）２２の他端が、固着される。このため、第２リード１２先端のＡｕワイヤ２２の接続部１８は、接着性を向上させるため主面Ｓｆ２に銀メッキ層３２が施されている。   The other end of a thin metal wire (for example, gold (Au) wire) 22 connected to the gate pad electrode 26 of the semiconductor element 20 is fixed to the connection portion 18 of the second lead 12. Therefore, the connecting portion 18 of the Au wire 22 at the tip of the second lead 12 is provided with a silver plating layer 32 on the main surface Sf2 in order to improve the adhesion.

図１（Ｂ）を参照して、クランパの凸部は、突起部１５上の押圧領域Ｐ（一点鎖線）を押圧する。この領域は極小の領域であり、凸部の位置調整の精度がシビアである。つまり凸部の押圧位置がずれると、例えば第２リード１２の先端を同時に押圧する可能性も考えられる。この場合、突起部１５の主面Ｓｆ１がリードフレーム基材（例えば銅フレーム）のままでは、銀メッキ層３２が施された第２リード１２先端の方が高くなり、凸部による突起部１５の押さえが不十分となる。   With reference to FIG. 1 (B), the convex part of a clamper presses the press area P (one-dot chain line) on the projection part 15. This region is a very small region, and the accuracy of the position adjustment of the convex portion is severe. That is, if the pressing position of the convex portion is shifted, there is a possibility that the tip of the second lead 12 is pressed simultaneously, for example. In this case, if the main surface Sf1 of the protrusion 15 is the lead frame base material (for example, a copper frame), the tip of the second lead 12 to which the silver plating layer 32 is applied becomes higher, and the protrusion 15 of the protrusion 15 is formed. Pressing is insufficient.

本実施形態では、突起部１５に、第２リード１２の接続部１８の銀メッキ層３２と同等の膜厚の銀メッキ層３１を設けることにより、凸部の押圧位置が金属細線用の第２リード１２にずれた場合であっても確実な押さえが可能となる。   In the present embodiment, the protrusion 15 is provided with a silver plating layer 31 having a film thickness equivalent to the silver plating layer 32 of the connection portion 18 of the second lead 12, so that the pressing position of the convex portion is the second for the fine metal wire. Even when the lead 12 is displaced, reliable pressing is possible.

このことは、凸部がアイランド１４側にずれた場合も同様である。本実施形態ではリードフレームが、アイランド１４の主面と第１リード１１の主面が同一平面上になるように打ち抜きなどにより形成され（図１（Ｃ）参照）、アイランド１４主面にも半導体素子１８の密着性向上のため銀メッキ層３０が設けられる。銀メッキ層３０、３１、３２の膜厚を同一とすることで、凸部がアイランド１４側にずれた場合であっても、アイランド１４と突起部１５の高さを一定にできる。   This is the same when the convex portion is shifted to the island 14 side. In the present embodiment, the lead frame is formed by punching or the like so that the main surface of the island 14 and the main surface of the first lead 11 are on the same plane (see FIG. 1C), and the semiconductor is also formed on the main surface of the island 14. A silver plating layer 30 is provided to improve the adhesion of the element 18. By making the thicknesses of the silver plating layers 30, 31, and 32 the same, the height of the island 14 and the protrusion 15 can be made constant even when the convex portion is shifted to the island 14 side.

本実施形態では、金属リボン２１を接続する第１リード１１の接続部１７にクランパ押圧用の突起部１５を設けたので、接続部１７の近傍をクランパで押さえることによりそのばたつきを抑制し、安定した金属リボン２１の固着が可能となる。加えて、本実施形態では、第１リード１１のうち突起部１５の主面のみに銀メッキ層３１を設けることにより、接続部１７としての面積と接着性を確保しつつ、クランプ押圧時における押圧力のばらつきの発生を抑えることができる。   In the present embodiment, since the protrusion 15 for pressing the clamper is provided on the connecting portion 17 of the first lead 11 that connects the metal ribbon 21, fluttering is suppressed by pressing the vicinity of the connecting portion 17 with the clamper, and stable. The fixed metal ribbon 21 can be secured. In addition, in the present embodiment, by providing the silver plating layer 31 only on the main surface of the protrusion 15 of the first lead 11, the area and the adhesiveness as the connection portion 17 are secured, and the pressing at the time of clamp pressing is performed. Generation of pressure variation can be suppressed.

更に、突起部１５は、封止樹脂で完全に封止される。押さえ用の突起部を樹脂封止後も側面から露出するように設けると、露出した突起部によって半導体装置１の耐圧や耐湿が劣化する原因となる。しかし本実施形態では、突起部１５が封止樹脂で完全に封止されるため、外部に露出することがなく、耐圧や耐湿の劣化を回避できる。   Furthermore, the protrusion 15 is completely sealed with a sealing resin. If the pressing protrusions are provided so as to be exposed from the side surfaces even after resin sealing, the exposed protrusions may cause the breakdown voltage and moisture resistance of the semiconductor device 1 to deteriorate. However, in this embodiment, since the protrusion 15 is completely sealed with the sealing resin, it is not exposed to the outside, and deterioration of the pressure resistance and moisture resistance can be avoided.

尚、金属リボン２１の他端が接続する第１リード１１は外部に導出するピン部１１Ｐが１本の場合を例に示したが、１つの接続部１７から複数本のピン部１１Ｐが導出するものであってもよい。   The first lead 11 to which the other end of the metal ribbon 21 is connected is shown as an example in which the number of the pin portions 11P led out to the outside is one, but a plurality of pin portions 11P are led out from one connecting portion 17. It may be a thing.

図２を参照して、他の実施形態について説明する。図２は本発明の第２の実施形態を示す平面図である。   Another embodiment will be described with reference to FIG. FIG. 2 is a plan view showing a second embodiment of the present invention.

図１に示す、金属リボン２１、および第１リード１１、第２リード１２は、１つのパッケージ（封止樹脂２４）内に複数設けられてもよい。   A plurality of the metal ribbons 21, the first leads 11, and the second leads 12 shown in FIG. 1 may be provided in one package (sealing resin 24).

例えば図２では、図１に示す封止樹脂内の１組の金属リボン２１、および第１リード１１、第２リード１２を、１つ封止樹脂内に２組設けるものであり、詳細は図１と同様であるので説明を省略する。   For example, in FIG. 2, one set of the metal ribbon 21 in the sealing resin shown in FIG. 1 and two sets of the first lead 11 and the second lead 12 are provided in the sealing resin. The description is omitted because it is the same as 1.

アイランド１４の主面には、半導体素子２０Ａ、２０Ｂが固着される。アイランド１４にそれぞれ対向して第１リード１１Ａ、１１Ｂ、第２リード１２Ａ、１２Ｂが配置される。それぞれの第１リード１１Ａ、１１Ｂの先端には突起部１５Ａ、１５Ｂが設けられる。突起部１５Ａ、１５Ｂの主面にはそれぞれ銀メッキ層３１Ａ、３１Ｂが設けられる。   Semiconductor elements 20 </ b> A and 20 </ b> B are fixed to the main surface of the island 14. The first leads 11A and 11B and the second leads 12A and 12B are arranged to face the island 14, respectively. Protrusions 15A and 15B are provided at the tips of the first leads 11A and 11B, respectively. Silver plating layers 31A and 31B are provided on the main surfaces of the protrusions 15A and 15B, respectively.

金属リボン２１Ａ、２１Ｂは、半導体素子２０Ａ、２０Ｂと、それぞれに対応する第１リード１１Ａ、１１Ｂとを接続する。   The metal ribbons 21A and 21B connect the semiconductor elements 20A and 20B to the corresponding first leads 11A and 11B.

また、アイランド１４に対向して第２リード１２Ａ、１２Ｂが設けられる。第２リード１２Ａ、１２Ｂの接続部１８Ａ、１８Ｂはそれぞれ、銀メッキ層３１Ａ、３１Ｂと同等の膜厚の銀メッキ層３２Ａ、３２Ｂが設けられ、半導体素子２０Ａ、２０Ｂのゲートパッド電極２６Ａ、２６ＢとＡｕワイヤ２２Ａ、２２Ｂによって接続される。アイランド１４上にも銀メッキ層３１Ａ、３１Ｂと同等の膜厚の銀メッキ層３０が設けられる。   Further, second leads 12A and 12B are provided facing the island 14. The connecting portions 18A and 18B of the second leads 12A and 12B are provided with silver plating layers 32A and 32B having the same thickness as the silver plating layers 31A and 31B, respectively, and the gate pad electrodes 26A and 26B of the semiconductor elements 20A and 20B. They are connected by Au wires 22A and 22B. A silver plating layer 30 having a film thickness equivalent to that of the silver plating layers 31A and 31B is also provided on the island 14.

このように、１つのパッケージ内に複数の金属リボン２１Ａ、２１Ｂが設けられる場合、１つの金属リボン２１Ａ（２１Ｂ）に対応して１つの突起部１５Ａ（１５Ｂ）が設けられる。これは各組毎に金属リボン２１Ａ、２１Ｂのボンディングが行われるためである。すなわち、１組目（図２の左側）の半導体素子２０Ａと第１リード１１Ａに金属リボン２１Ａを固着する場合に、対応する突起部１５Ａがクランパの凸部によって押圧される。その後２組目（図２の右側）の半導体素子２０Ｂと第１リード１１Ｂに金属リボン２１Ｂを固着する場合に、対応する突起部１５Ｂがクランパの凸部によって押圧される。   As described above, when a plurality of metal ribbons 21A and 21B are provided in one package, one protrusion 15A (15B) is provided corresponding to one metal ribbon 21A (21B). This is because the metal ribbons 21A and 21B are bonded to each group. That is, when the metal ribbon 21A is fixed to the first set (left side in FIG. 2) of the semiconductor element 20A and the first lead 11A, the corresponding protrusion 15A is pressed by the protrusion of the clamper. Thereafter, when the metal ribbon 21B is fixed to the second set (right side in FIG. 2) of the semiconductor element 20B and the first lead 11B, the corresponding protrusion 15B is pressed by the protrusion of the clamper.

尚、アイランド１４上の半導体素子２０は、図示の如く２つ個別のチップに限らず、１つのチップ（共通基板）に２つの例えばＭＯＳＦＥＴの素子領域が形成されたものであってもよい。いずれの場合も、金属リボン２１Ａ、２２が接続する半導体素子２０表面の電極（例えばソース電極）２５Ａ、２５Ｂは２つ設けられる。   The semiconductor element 20 on the island 14 is not limited to two individual chips as shown in the figure, but may be one in which two element regions of MOSFETs are formed on one chip (common substrate). In any case, two electrodes (for example, source electrodes) 25A and 25B on the surface of the semiconductor element 20 to which the metal ribbons 21A and 22 are connected are provided.

次に、図３から図７を参照して、上記した構成の半導体装置の製造方法を説明する。   Next, a method for manufacturing the semiconductor device having the above-described configuration will be described with reference to FIGS.

図３は、リードフレーム１０の一部を示す図である。   FIG. 3 is a view showing a part of the lead frame 10.

先ず、所定形状のリードフレーム１０を準備する。リードフレーム１０は、板厚が例えば１５０μｍ程度の銅もしくは銅を主成分とする合金からなる金属板である。リードフレーム１０は外形が短冊形状であり、後述する所望の位置に、選択的に金属メッキを施して銀メッキ層（ハッチングで示す）が形成される。   First, a lead frame 10 having a predetermined shape is prepared. The lead frame 10 is a metal plate made of copper having a plate thickness of, for example, about 150 μm or an alloy containing copper as a main component. The outer shape of the lead frame 10 is a strip shape, and a silver plating layer (indicated by hatching) is formed by selectively performing metal plating at a desired position described later.

金属板のエッチング加工または打ち抜き加工によって枠状の外枠４０の内部に複数個のユニット４２が形成されている。ここでユニット４２とは、１つの半導体装置１を構成する（１つの封止樹脂２４で封止される）要素単位のことであり、ここでは一例として図２に示す半導体装置１のリードフレーム１０を示す。図３では、一例として、額縁状の外枠４０と連結された６個のユニット４２が示されている。尚、図３においては説明の便宜上、複数のユニット４２間で異なる構成を示しているが、以下の説明は全てのユニット４２について同様に設けられている。   A plurality of units 42 are formed inside the frame-shaped outer frame 40 by etching or punching a metal plate. Here, the unit 42 is an element unit constituting one semiconductor device 1 (sealed with one sealing resin 24), and here, as an example, the lead frame 10 of the semiconductor device 1 shown in FIG. Indicates. In FIG. 3, as an example, six units 42 connected to the frame-shaped outer frame 40 are shown. In FIG. 3, for the sake of convenience of explanation, different configurations are shown among the plurality of units 42, but the following explanation is similarly provided for all the units 42.

１つのユニット４２は、１つのアイランド１４と、第１リード１１Ａ、１１Ｂ、第２リード１２Ａ、１２Ｂ、第３リード１３とから成る。アイランド１４は、主面に半導体素子２０が載置可能な大きさである。アイランド１４に接近する第１リード１１Ａ、１１Ｂの先端部を部分的に幅広とすることで接続部１７Ａ、１７Ｂが形成されている。第１リード１１Ａ、１１Ｂ、第２リード１２Ａ、１２Ｂは一端（接続部１７Ａ、１７Ｂ、１８Ａ、１８Ｂ側）がアイランド１４と近接して対向配置され、他端（ピン部１１ＰＡ、１１ＰＢ、１２ＰＡ、１２ＰＢ）が外枠４０と連続している。また第３リード１３は一端がアイランド１４と連続し、他端が外枠と連続している。   One unit 42 includes one island 14, first leads 11 </ b> A and 11 </ b> B, second leads 12 </ b> A and 12 </ b> B, and a third lead 13. The island 14 has such a size that the semiconductor element 20 can be placed on the main surface. Connection portions 17A and 17B are formed by partially widening the tip portions of the first leads 11A and 11B approaching the island 14. The first leads 11A, 11B and the second leads 12A, 12B are arranged so that one end (connecting portions 17A, 17B, 18A, 18B side) is close to the island 14 and is opposed to the other end (pin portions 11PA, 11PB, 12PA, 12PB). ) Is continuous with the outer frame 40. The third lead 13 has one end continuous with the island 14 and the other end continuous with the outer frame.

第１リード１１Ａ、１１Ｂの接続部１７Ａ、１７Ｂ端部には、第２リード１２Ａ、１２Ｂの接続部１８Ａ、１８Ｂ方向に突出する突起部１５Ａ、１５Ｂが設けられる。   Protrusions 15A and 15B projecting in the direction of the connecting portions 18A and 18B of the second leads 12A and 12B are provided at the ends of the connecting portions 17A and 17B of the first leads 11A and 11B.

アイランド１４および第１リード１１Ａ等の各リード形成前に選択的に形成される銀メッキ層は以下の通りである。すなわち、アイランド１４の全面には銀メッキ層３０が形成され、第１リード１１Ａ、１１Ｂの突起部１５Ａ、１５Ｂの主面にも銀メッキ層３１Ａ、３１Ｂが形成される。更に第２リード１２Ａ、１２Ｂの接続部１８Ａ、１８Ｂ主面にもそれぞれ、銀メッキ層３２Ａ、３２Ｂが形成される。尚、第１リード１１Ａ、１１Ｂの接続部１７Ａ、１７Ｂは、銅のリードフレーム基材が露出している。銀メッキ層３０、３１Ａ、３１Ｂ、３２Ａ、３２Ｂの厚みはいずれも同等であり、例えば３μｍ〜１０μｍである（ユニット４２Ａ参照）。   The silver plating layer selectively formed before formation of each lead such as the island 14 and the first lead 11A is as follows. That is, the silver plating layer 30 is formed on the entire surface of the island 14, and the silver plating layers 31A and 31B are also formed on the main surfaces of the protrusions 15A and 15B of the first leads 11A and 11B. Further, silver plating layers 32A and 32B are formed on the main surfaces of the connecting portions 18A and 18B of the second leads 12A and 12B, respectively. Note that the copper lead frame base material is exposed at the connecting portions 17A and 17B of the first leads 11A and 11B. The thicknesses of the silver plating layers 30, 31A, 31B, 32A, and 32B are all the same, for example, 3 μm to 10 μm (see the unit 42A).

次に、アイランド１４の上面に固着材（不図示）を介して、半導体素子２０を実装する（ユニット４２Ｂ参照）。半導体素子２０としては、上記したように、ＭＯＳＦＥＴ、バイポーラトランジスタ、ＩＧＢＴ、ＩＣ、ダイオード等が採用される。ここでは、一例としてＭＯＳＦＥＴが半導体素子２０として採用され、上面にソース電極２５Ａ、２５Ｂおよびゲートパッド電極２６Ａ、２６Ｂが設けられ、裏面はドレイン電極が形成されている。より詳細には、半導体素子２０は、例えば共通基板（すなわち１チップ）に２つのＭＯＳＦＥＴの素子領域が平面視において左右に並んで形成され、左側の素子領域上にはこれと接続するソース電極２５Ａおよびゲートパッド電極２６Ａが設けられ、右側の素子領域上にはこれと接続するソース電極２５Ｂおよびゲートパッド電極２６Ｂが設けられている。あるいは２つの基板（２チップ）の半導体素子２０Ａ、２０Ｂが１つのアイランド１４に実装されるものであっても同様である。   Next, the semiconductor element 20 is mounted on the upper surface of the island 14 via a fixing material (not shown) (see the unit 42B). As described above, a MOSFET, a bipolar transistor, an IGBT, an IC, a diode, or the like is employed as the semiconductor element 20. Here, as an example, a MOSFET is employed as the semiconductor element 20, source electrodes 25A and 25B and gate pad electrodes 26A and 26B are provided on the upper surface, and a drain electrode is formed on the rear surface. More specifically, in the semiconductor element 20, for example, two MOSFET element regions are formed side by side in a plan view on a common substrate (that is, one chip), and a source electrode 25A connected to the left element region is connected to the left element region. And a gate pad electrode 26A, and a source electrode 25B and a gate pad electrode 26B connected thereto are provided on the right element region. Alternatively, the same applies to the case where the semiconductor elements 20A and 20B of two substrates (two chips) are mounted on one island 14.

以下半導体素子２０の平面視において左のソース電極２５Ａ側を一次側、右のソース電極２５Ｂ側を二次側と称する。   Hereinafter, in plan view of the semiconductor element 20, the left source electrode 25A side is referred to as a primary side, and the right source electrode 25B side is referred to as a secondary side.

固着材としては、半導体素子２０の裏面が電極として用いられる場合は、半田や導電性Ａｇペースト等の導電性固着材が用いられる。一方、半導体素子２０の裏面が電極として用いられない場合は、エポキシ樹脂等の絶縁性の接着材を固着材として用いても良い。   As the fixing material, when the back surface of the semiconductor element 20 is used as an electrode, a conductive fixing material such as solder or conductive Ag paste is used. On the other hand, when the back surface of the semiconductor element 20 is not used as an electrode, an insulating adhesive such as an epoxy resin may be used as a fixing material.

図４から図７を参照してその後のボンディング工程について説明する。ボンディング装置（不図示）にてリボンボンディングを行うために、ボンディング装置の載置台（不図示）上にリードフレーム１０が位置合わせされる。   The subsequent bonding process will be described with reference to FIGS. In order to perform ribbon bonding with a bonding apparatus (not shown), the lead frame 10 is aligned on a mounting table (not shown) of the bonding apparatus.

このとき、載置台上方に設置されたクランパ５０によってリードフレーム１０の一部が載置台表面に押さえられる。そして、半導体素子２０の電極と第１リード１１Ａ、１１Ｂとを、金属リボン２１Ａ、２１Ｂを介して接続する。   At this time, a part of the lead frame 10 is pressed against the surface of the mounting table by the clamper 50 installed above the mounting table. Then, the electrodes of the semiconductor element 20 and the first leads 11A and 11B are connected via the metal ribbons 21A and 21B.

図４から図６を参照してクランパ５０について説明する。これらはクランパ５０の構成を示す図であり、図４は、アイランド１４の半導体素子の実装面（主面Ｓｆ１）側から見た平面図であり、図５は、クランパ５０に設けられた凸部のパターンを示す平面図である。また、図６は図５のｂ−ｂ線断面図であり、アイランド１４上の半導体素子は省略している。またこれらの図において、図４のユニット４２Ａの如く、全てのユニット４２に半導体素子２０が実装されている。   The clamper 50 will be described with reference to FIGS. These are diagrams showing the configuration of the clamper 50. FIG. 4 is a plan view of the island 14 as viewed from the semiconductor element mounting surface (main surface Sf1) side. FIG. 5 is a projection provided on the clamper 50. It is a top view which shows the pattern. FIG. 6 is a cross-sectional view taken along the line bb of FIG. 5, and a semiconductor element on the island 14 is omitted. In these drawings, the semiconductor element 20 is mounted on all the units 42 as in the unit 42A of FIG.

図４、図５では６つのユニット４２を一括で押さえるクランパ５０を１つのブロックＢとして示している。図４において左側の３つのユニット４２の列は、第１ブロックＢ１であり、半導体素子２０の一次側のソース電極２５Ａと第１リード１１Ａとが固着される。また右側の３つのユニット４２の列は、第２ブロックＢ２であり、一次側がボンディングされた同じ半導体素子２０の二次側のソース電極２５Ｂと第１リード１１Ｂとが固着される。   4 and 5, the clamper 50 that collectively holds the six units 42 is shown as one block B. In FIG. 4, the row of the three units 42 on the left side is the first block B1, and the primary-side source electrode 25A and the first lead 11A are fixed to the semiconductor element 20. The row of the three units 42 on the right side is the second block B2, and the source electrode 25B on the secondary side of the same semiconductor element 20 bonded on the primary side and the first lead 11B are fixed.

第１ブロックＢ１のクランパ５０には、少なくとも一次側のソース電極２５Ａと第１リード１１Ａが露出する第１開口部ＯＰ１が形成され、第１開口部ＯＰ１を介してクランパ５０上方からリボンボンディングを行う。クランパ５０のリードフレーム１０の突起部１５Ａに重畳する位置に、リードフレーム１０方向に突出する第１凸部５１（ハッチング）が設けられている（図５および図６参照）。   The clamper 50 of the first block B1 is formed with a first opening OP1 from which at least the primary-side source electrode 25A and the first lead 11A are exposed, and ribbon bonding is performed from above the clamper 50 through the first opening OP1. . A first convex portion 51 (hatching) protruding in the direction of the lead frame 10 is provided at a position overlapping the protrusion 15A of the lead frame 10 of the clamper 50 (see FIGS. 5 and 6).

第２ブロックＢ２のクランパ５０には、少なくとも二次側のソース電極２５Ｂと第１リード１１Ｂとが露出する第２開口部ＯＰ２が形成され、第２開口部ＯＰ２を介してクランパ５０上方からリボンボンディングを行う。クランパ５０のリードフレーム１０の突起部１５Ｂに重畳する位置に、リードフレーム１０方向に突出する第２凸部５２（ハッチング）が設けられている（図５および図６参照）。   The clamper 50 of the second block B2 is formed with a second opening OP2 through which at least the secondary-side source electrode 25B and the first lead 11B are exposed, and ribbon bonding from above the clamper 50 through the second opening OP2. I do. A second convex portion 52 (hatching) protruding in the direction of the lead frame 10 is provided at a position overlapping the protrusion 15B of the lead frame 10 of the clamper 50 (see FIGS. 5 and 6).

尚、図５および図６の如く、各リードのピン部１１ＰＡ、１１ＰＢ、１２ＰＡ、１２ＰＢ、１３Ｐは、幅広の第３凸部５３により一括で押圧される。また、前記ボンディング装置の載置台の表面は、折り曲げ加工を受けたリードフレーム１０の裏面側に当接するように段差が設けられている。即ち、アイランド１４、突起部１５Ａ、１５Ｂ及び第２リード１２Ａ、１２Ｂの先端部分が設置される作業台の表面は、第１リード１１、第２リード１２、及び第３リード１３が設置される作業台の表面よりも高さが高い。第１、第２凸部５１、５２と、第３凸部５３の高さも、前記リードフレームの折り曲げ加工の段差に準じた高さの差が設けられる。   As shown in FIGS. 5 and 6, the pin portions 11PA, 11PB, 12PA, 12PB, and 13P of each lead are pressed together by the wide third convex portion 53. Further, the surface of the mounting table of the bonding apparatus is provided with a step so as to come into contact with the back side of the lead frame 10 that has undergone the bending process. That is, the work surface on which the first lead 11, the second lead 12, and the third lead 13 are installed on the surface of the work table on which the island 14, the protrusions 15 </ b> A and 15 </ b> B, and the tip portions of the second leads 12 </ b> A and 12 </ b> B are installed. The height is higher than the surface of the table. The heights of the first and second convex portions 51 and 52 and the third convex portion 53 are also provided with a difference in height according to the level difference in the bending process of the lead frame.

図７を参照して、金属リボン２１Ａ、２１Ｂのボンディング工程について説明する。図７（Ａ）は、第１ブロックＢ１と第２ブロックＢ２の一部を示す平面図であり、図７（Ｂ）は第１ブロックＢ１において第１凸部５１が突起部１５Ａを押下する様子を示す拡大図であり、図７（Ｃ）は第２ブロックＢ２において第２凸部５２が突起部１５Ｂを押下する様子を示す拡大図である。   With reference to FIG. 7, the bonding process of the metal ribbons 21A and 21B will be described. FIG. 7A is a plan view showing a part of the first block B1 and the second block B2, and FIG. 7B shows a state in which the first protrusion 51 presses the protrusion 15A in the first block B1. FIG. 7C is an enlarged view showing a state in which the second protrusion 52 presses down the protrusion 15B in the second block B2.

クランパ５０でリードフレーム１０を押圧すると、第１ブロックＢ１において第１凸部５１が、一次側の突起部１５Ａを押圧し、第２ブロックＢ２において第２凸部５２が二次側の突起部１５Ｂを押圧する。突起部１５Ａ、および突起部１５Ｂは、第２リード１２Ａ、１２Ｂの接続部１８Ａ、１８Ｂ、およびアイランド１４と同じ高さに形成され、それぞれの主面に同じ厚みの銀メッキ層３０、３１Ａ、３２Ａ、３１Ｂ、３２Ｂが形成されている。このため、第１凸部５１および第２凸部５２が若干ずれて接続部１８Ａ、１８Ｂやアイランド１４を突起部１５Ａ、１５Ｂと共に押下した場合であっても、両者の高さに差がないので突起部１５Ａ、１５Ｂをクランプする押圧力が低下することがない。クランパ５０からは不活性ガスとして、例えば、４リットル／分の窒素ガスが吹き込まれる。   When the lead frame 10 is pressed by the clamper 50, the first convex portion 51 presses the primary projection 15A in the first block B1, and the second convex 52 is the secondary projection 15B in the second block B2. Press. The protruding portion 15A and the protruding portion 15B are formed at the same height as the connecting portions 18A and 18B of the second leads 12A and 12B and the island 14, and silver plating layers 30, 31A and 32A having the same thickness on the respective main surfaces. , 31B, 32B are formed. For this reason, even when the first convex portion 51 and the second convex portion 52 are slightly displaced and the connecting portions 18A and 18B and the island 14 are pressed together with the projecting portions 15A and 15B, there is no difference in height between the two. The pressing force for clamping the protrusions 15A and 15B does not decrease. From the clamper 50, for example, nitrogen gas is blown as an inert gas at 4 liters / minute.

この状態で、半導体素子２０の一次側に金属リボン２１Ａを支持するキャピラリ（不図示）を移動し、ソース電極２５Ａ上に金属リボンの一端を超音波接合（ウェッヂボンディング）する。その後、例えば山状など所望のボンディングループを形成するようにキャピラリを移動させ、金属リボンの他端を第１リード１１Ａの接続部１７Ａ上に同じく超音波接合（ウェッヂボンディング）により固着し、その後金属リボン２１Ａを切断する。接続部１７Ａは、銀メッキ層が設けられず、リードフレーム基材（銅）が露出しているため、金属リボン２１Ａと良好な接続性を保てる。   In this state, a capillary (not shown) that supports the metal ribbon 21A is moved to the primary side of the semiconductor element 20, and one end of the metal ribbon is ultrasonically bonded (wedge bonding) on the source electrode 25A. Thereafter, the capillary is moved so as to form a desired bonding loop such as a mountain shape, and the other end of the metal ribbon is fixed onto the connecting portion 17A of the first lead 11A by ultrasonic bonding (wedge bonding). The ribbon 21A is cut. The connecting portion 17A is not provided with a silver plating layer, and the lead frame base material (copper) is exposed, so that it can maintain good connectivity with the metal ribbon 21A.

このとき、第１凸部５１が一次側の第１リード１１Ａの突起部１５Ａを確実に押圧し、同時に第３突起部５３がピン部１１ＰＡを押圧している。従って、第１リード１１の根元部分と先端部分との２箇所で押圧固定するので、金属リボン２１Ａを固着する接続部１７Ａのばたつきを防止し、安定して金属リボン２１Ａをボンディングできる。   At this time, the first protrusion 51 securely presses the protrusion 15A of the first lead 11A on the primary side, and at the same time, the third protrusion 53 presses the pin portion 11PA. Accordingly, since the first lead 11 is pressed and fixed at the base portion and the tip portion, the flapping of the connecting portion 17A to which the metal ribbon 21A is fixed can be prevented and the metal ribbon 21A can be bonded stably.

半導体素子２０の一次側の金属リボン２１Ａのボンディングが終了すると、リードフレーム１０が水平に移動され、当該半導体素子２０について一次側と同様に、二次側の金属リボンボンディングが行われる。即ち、第２開口部ＯＰ２に一次側の金属リボン２１Ａの固着が終了した半導体素子２０を露出させ、２次側のリボンボンディングを行なう。   When the bonding of the metal ribbon 21A on the primary side of the semiconductor element 20 is completed, the lead frame 10 is moved horizontally, and the metal ribbon bonding on the secondary side is performed on the semiconductor element 20 in the same manner as the primary side. That is, the semiconductor element 20 in which the primary side metal ribbon 21A is fixed is exposed in the second opening OP2, and the secondary side ribbon bonding is performed.

半導体素子２０の二次側に金属リボン２１Ｂを支持するキャピラリ（不図示）を移動し、ソース電極２５Ｂ上に金属リボン２１Ｂの一端を超音波接合する。その後、例えば山状など所望のボンディングループを形成するようにキャピラリを移動させ、金属リボン２１Ｂの他端を第１リード１１Ｂの接続部１７Ｂ上に固着し、金属リボン２１Ｂを切断する。   A capillary (not shown) that supports the metal ribbon 21B is moved to the secondary side of the semiconductor element 20, and one end of the metal ribbon 21B is ultrasonically bonded onto the source electrode 25B. Thereafter, the capillary is moved so as to form a desired bonding loop such as a mountain shape, the other end of the metal ribbon 21B is fixed on the connection portion 17B of the first lead 11B, and the metal ribbon 21B is cut.

このとき、第２凸部５２が二次側の突起部１５Ｂを確実に押圧し、加えて第３突起部５３がピン部１１ＰＢを押圧している。従って、金属リボン２１Ｂを固着する接続部１７Ｂのばたつきを防止し、安定して金属リボン２１Ｂをボンディングできる。   At this time, the second protrusion 52 reliably presses the secondary protrusion 15B, and in addition, the third protrusion 53 presses the pin 11PB. Therefore, flapping of the connecting portion 17B to which the metal ribbon 21B is fixed can be prevented, and the metal ribbon 21B can be bonded stably.

更に、金属リボン２１Ａ、２１Ｂのボンディングが終了したリードフレームは、今度はＡｕワイヤ用のワイヤボンディング装置に移送され、既知の方法によって、図１に示したように、一次側のゲートパッド電極２６Ａと第２リード１２ＡとがＡｕワイヤ２２によって接続され、二次側のゲートパッド電極２６Ｂと第２リード１２Ｂとが同様にＡｕワイヤ２２によって接続される。Ａｕワイヤ２２は例えば熱圧着によるボールボンディングによって接続される。このＡｕワイヤ２２は、半導体素子２０のゲートパッド電極２６から突起部１５の上方を通過して、第２リード１２の接続部１８に固着される。   Further, the lead frame after the bonding of the metal ribbons 21A and 21B is transferred to a wire bonding apparatus for Au wires, and, as shown in FIG. The second lead 12A is connected by the Au wire 22, and the secondary side gate pad electrode 26B and the second lead 12B are similarly connected by the Au wire 22. The Au wire 22 is connected by, for example, ball bonding by thermocompression bonding. The Au wire 22 passes from the gate pad electrode 26 of the semiconductor element 20 to above the protruding portion 15 and is fixed to the connecting portion 18 of the second lead 12.

Ａｕワイヤが固着される第２リード１２Ａ、１２Ｂは先端の接続部１８Ａ（１８Ｂ）の主面に接着性を向上させるため銀メッキ層３２Ａ、３２Ｂが施されている。   The second leads 12A and 12B to which the Au wires are fixed are provided with silver plating layers 32A and 32B on the main surface of the tip connection portion 18A (18B) in order to improve adhesion.

その後、半導体素子２０等が被覆されるように、モールド金型を用いて樹脂封止を行う。このモールド金型は、上金型と下金型とから成り、両者を当接させることで、封止樹脂が注入されるキャビティが形成される。樹脂封止の方法としては、トランスファーモールド、インジェクションモールド、またはポッティングが採用できる。樹脂材料としては、エポキシ樹脂等の熱硬化性樹脂がトランスファーモールドで採用でき、ポリイミド樹脂、ポリフェニレンサルファイド等の熱可塑性樹脂はインジェクションモールドで採用できる。   Thereafter, resin sealing is performed using a mold so that the semiconductor element 20 and the like are covered. The mold is composed of an upper mold and a lower mold, and a cavity into which a sealing resin is injected is formed by bringing both molds into contact with each other. As a resin sealing method, transfer molding, injection molding, or potting can be employed. As the resin material, a thermosetting resin such as an epoxy resin can be used in the transfer mold, and a thermoplastic resin such as polyimide resin or polyphenylene sulfide can be used in the injection mold.

本工程は既知の方法であり図示は省略して説明する。半導体素子２０が上面に実装されたアイランド１４と第１リード１１Ａ、１１Ｂ、第２リード１２Ａ、１２Ｂの端部を、キャビティに収納させる。次に、モールド金型に設けたゲートからキャビティの内部に封止樹脂を注入して、アイランド１４、半導体素子２０、金属リボン２１Ａ、２１Ｂおよび第１リード１１Ａ、１１Ｂ、第２リード１２Ａ、１２Ｂを樹脂封止する。リードフレーム１０に設けられた各ユニット４２は一括して同時に樹脂封止される。   This step is a known method and will not be described. The island 14 on which the semiconductor element 20 is mounted on the upper surface and the ends of the first leads 11A and 11B and the second leads 12A and 12B are housed in the cavity. Next, sealing resin is injected into the cavity from the gate provided in the mold, and the island 14, the semiconductor element 20, the metal ribbons 21A and 21B, the first leads 11A and 11B, and the second leads 12A and 12B are connected. Seal with resin. Each unit 42 provided in the lead frame 10 is simultaneously sealed with resin.

キャビティの内部への樹脂の注入が終了した後は、モールド金型から樹脂封止体を取り出す。また、封止樹脂として採用された樹脂が熱硬化性樹脂である場合は、加熱硬化の工程が必要となる。   After the injection of the resin into the cavity is completed, the resin sealing body is taken out from the mold. Further, when the resin employed as the sealing resin is a thermosetting resin, a heat curing step is required.

その後、打ち抜き加工を行うことでリードフレーム１０から各ユニット４２を分離し、分離された半導体装置１を、例えば実装基板上に実装する。また、外部に露出する第１リード１１Ａ等の酸化を防止するために、第１リード１１Ａ等の表面を半田メッキ等のメッキ膜により被覆する。以上の工程により、図１に構造を示す半導体装置１が製造される。   Thereafter, each unit 42 is separated from the lead frame 10 by punching, and the separated semiconductor device 1 is mounted on a mounting substrate, for example. Further, in order to prevent oxidation of the first lead 11A and the like exposed to the outside, the surface of the first lead 11A and the like is covered with a plating film such as solder plating. Through the above steps, the semiconductor device 1 having the structure shown in FIG. 1 is manufactured.

１ 半導体装置
１０ リードフレーム
１１、１１Ａ、１１Ｂ 第１リード
１２、１２Ａ、１２Ｂ 第２リード
１３ 第３リード
１４ アイランド
１５ 突起部
２０ 半導体素子
２１、２１Ａ、２１Ｂ 金属リボン
１７、１７Ａ、１７Ｂ 接続部
１８、１８Ａ、１８Ｂ 接続部
３０ 銀メッキ層
３１、３１Ａ、３１Ｂ 銀メッキ層
３２、３２Ａ、３２Ｂ 銀メッキ層
５０ クランパ
５１ 第１凸部
５２ 第２凸部 DESCRIPTION OF SYMBOLS 1 Semiconductor device 10 Lead frame 11, 11A, 11B 1st lead 12, 12A, 12B 2nd lead 13 3rd lead 14 Island 15 Protrusion part 20 Semiconductor element 21, 21A, 21B Metal ribbon 17, 17A, 17B Connection part 18, 18A, 18B Connection part 30 Silver plating layer 31, 31A, 31B Silver plating layer 32, 32A, 32B Silver plating layer 50 Clamper 51 First convex part 52 Second convex part

Claims (15)

主面に電極が配置された半導体素子と、
該半導体素子が固着されるアイランドと、
それぞれが該アイランドと離間して対向配置され、前記半導体素子と電気的に接続されて一部が外部に導出する第１リードおよび第２リードと、
一端が前記半導体素子の前記電極と固着し、他端が前記第１リードと固着する金属リボンとを備え、
前記第１リードの先端部分に、当該先端部分から前記アイランドと前記第２リードの先端との間の領域にまで突出する突起部を設け、
当該突起部に、前記第２リードの先端部分に施した金属メッキと同じ金属メッキを、部分的に施したことを特徴とする半導体装置。 A semiconductor element having an electrode disposed on the main surface;
An island to which the semiconductor element is fixed;
A first lead and a second lead, each of which is disposed opposite to the island and electrically connected to the semiconductor element, and a part of the first lead and the second lead are led out
One end is fixed to the electrode of the semiconductor element, and the other end is provided with a metal ribbon fixed to the first lead,
Providing a protrusion at the tip of the first lead that projects from the tip to a region between the island and the tip of the second lead;
A semiconductor device, wherein the protrusion is partially subjected to the same metal plating as the metal plating applied to the tip portion of the second lead. 前記第２リードの先端に金属細線が固着されることを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein a thin metal wire is fixed to a tip of the second lead. 前記第１リードの先端部分には、前記金属メッキが施されないことを特徴とする請求項１または請求項２記載の半導体装置。   3. The semiconductor device according to claim 1, wherein the metal plating is not applied to a tip portion of the first lead. 前記金属リボンがアルミニウムまたはアルミニウムを主体とする金属材料であり、前記第１リードの素材は銅または銅を主体とする金属材料であり、前記第１リードの前記金属リボンとの接合部分の表面には前記第１リードの素材が露出していることを特徴とする請求項１から請求項３のいずれかに記載の半導体装置。   The metal ribbon is aluminum or a metal material mainly composed of aluminum, and the material of the first lead is copper or a metal material mainly composed of copper, and is formed on the surface of the joint portion of the first lead with the metal ribbon. The semiconductor device according to claim 1, wherein a material of the first lead is exposed. 前記突起部は前記アイランドの１辺に沿うようにこれと平行に伸びるように配置したことを特徴とする請求項１から請求項４のいずれかに記載の半導体装置。   5. The semiconductor device according to claim 1, wherein the protrusion is disposed so as to extend in parallel with one side of the island. 前記第１リードと前記アイランドとの間隔よりも前記第２リードと前記アイランドとの間隔が大となるように前記第２リードの先端部が後方に後退され、当該後退された領域に前記突起部を配置したことを特徴とする請求項１から請求項５のいずれかに記載の半導体装置。   The tip of the second lead is retracted rearward so that the distance between the second lead and the island is larger than the distance between the first lead and the island, and the protrusion is in the retracted region. The semiconductor device according to claim 1, wherein the semiconductor device is arranged. 前記突起部の金属メッキ表面の高さと、前記第２リードの金属メッキ表面の高さとが同一であることを特徴とする請求項１から請求項６のいずれかに記載の半導体装置。   7. The semiconductor device according to claim 1, wherein a height of the metal plating surface of the protrusion is the same as a height of the metal plating surface of the second lead. アイランドと、それぞれ前記アイランドと離間して対向する第１リードおよび第２リードと、前記アイランドの主面に配置された半導体素子を有し、該半導体素子の電極と、前記第１リードとを金属リボンにて接続する工程を備えた半導体装置の製造方法であって、
前記第１リードの先端部分に、当該先端部分から前記アイランドと前記第２リードの先端との間の領域にまで突出する突起部を設け、
当該突起部に、前記第２リードの先端部分に施した金属メッキと同じ金属メッキを、部分的に施しており、
前記突起部の上をクランパの凸部で押圧した状態で前記金属リボンの一端を前記電極に固着し、他端を前記第１リードの先端部分に固着することを特徴とする半導体装置の製造方法。 An island, a first lead and a second lead that are spaced apart from the island, and a semiconductor element disposed on a main surface of the island, and the electrode of the semiconductor element and the first lead are made of metal A method of manufacturing a semiconductor device comprising a step of connecting with a ribbon,
Providing a protrusion at the tip of the first lead that projects from the tip to a region between the island and the tip of the second lead;
The same metal plating as the metal plating applied to the tip portion of the second lead is partially applied to the protrusion,
A method of manufacturing a semiconductor device, wherein one end of the metal ribbon is fixed to the electrode and the other end is fixed to a tip portion of the first lead in a state where the protrusion is pressed by a convex portion of a clamper. . 前記金属リボンは前記第１リードに超音波接合されることを特徴とする請求項８に記載の半導体装置の製造方法。   The method of manufacturing a semiconductor device according to claim 8, wherein the metal ribbon is ultrasonically bonded to the first lead. 前記第２リードの先端に金属細線が固着されることを特徴とする請求項８または請求項９に記載の半導体装置の製造方法。   10. The method of manufacturing a semiconductor device according to claim 8, wherein a thin metal wire is fixed to the tip of the second lead. 前記第１リードの先端部分には、前記金属メッキが施されないことを特徴とする請求項８から請求項１０のいずれか記載の半導体装置の製造方法。   11. The method of manufacturing a semiconductor device according to claim 8, wherein the metal plating is not applied to a tip portion of the first lead. 前記金属リボンがアルミまたはアルミを主体とする金属材料であり、前記第１リードの素材は銅または銅を主体とする金属材料であり、前記第１リードの前記金属リボンとの接合部分の表面には前記第１リードの素材が露出していることを特徴とする請求項８から請求項１１のいずれかに記載の半導体装置の製造方法。   The metal ribbon is aluminum or a metal material mainly composed of aluminum, and the material of the first lead is copper or a metal material mainly composed of copper, and is formed on the surface of the joint portion of the first lead with the metal ribbon. 12. The method of manufacturing a semiconductor device according to claim 8, wherein a material of the first lead is exposed. 前記突起部は前記アイランドの１辺に沿うようにこれと平行に伸びるように配置したことを特徴とする請求項８から請求項１２のいずれかに記載の半導体装置の製造方法。   13. The method of manufacturing a semiconductor device according to claim 8, wherein the protruding portion is arranged so as to extend in parallel with one side of the island. 前記第１リードと前記アイランドとの間隔よりも前記第２リードと前記アイランドとの間隔が大となるように前記第２リードの先端部が後方に後退され、当該後退された領域に前記突起部を配置したことを特徴とする請求項８から請求項１３のいずれかに記載の半導体装置の製造方法。   The tip of the second lead is retracted rearward so that the distance between the second lead and the island is larger than the distance between the first lead and the island, and the protrusion is in the retracted region. The method for manufacturing a semiconductor device according to claim 8, wherein the semiconductor device is disposed. 前記突起部の金属メッキ表面の高さと、前記第２リードの金属メッキ表面の高さとが同一であることを特徴とする請求項８から請求項１４のいずれかに記載の半導体装置の製造方法。   15. The method of manufacturing a semiconductor device according to claim 8, wherein the height of the metal plating surface of the protrusion is the same as the height of the metal plating surface of the second lead.
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