JP2012004459A5 - - Google Patents

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Publication number
JP2012004459A5
JP2012004459A5 JP2010139875A JP2010139875A JP2012004459A5 JP 2012004459 A5 JP2012004459 A5 JP 2012004459A5 JP 2010139875 A JP2010139875 A JP 2010139875A JP 2010139875 A JP2010139875 A JP 2010139875A JP 2012004459 A5 JP2012004459 A5 JP 2012004459A5
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JP
Japan
Prior art keywords
buried layer
layer
semiconductor device
nitride semiconductor
portions
Prior art date
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Application number
JP2010139875A
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English (en)
Japanese (ja)
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JP2012004459A (ja
JP5475569B2 (ja
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Publication date
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Priority to JP2010139875A priority Critical patent/JP5475569B2/ja
Priority claimed from JP2010139875A external-priority patent/JP5475569B2/ja
Priority to US12/952,758 priority patent/US8247794B2/en
Priority to TW100107919A priority patent/TWI476913B/zh
Publication of JP2012004459A publication Critical patent/JP2012004459A/ja
Publication of JP2012004459A5 publication Critical patent/JP2012004459A5/ja
Application granted granted Critical
Publication of JP5475569B2 publication Critical patent/JP5475569B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010139875A 2010-06-18 2010-06-18 窒化物半導体素子 Expired - Fee Related JP5475569B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010139875A JP5475569B2 (ja) 2010-06-18 2010-06-18 窒化物半導体素子
US12/952,758 US8247794B2 (en) 2010-06-18 2010-11-23 Nitride semiconductor device
TW100107919A TWI476913B (zh) 2010-06-18 2011-03-09 氮化物半導體裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010139875A JP5475569B2 (ja) 2010-06-18 2010-06-18 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2012004459A JP2012004459A (ja) 2012-01-05
JP2012004459A5 true JP2012004459A5 (https=) 2012-10-18
JP5475569B2 JP5475569B2 (ja) 2014-04-16

Family

ID=45327848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010139875A Expired - Fee Related JP5475569B2 (ja) 2010-06-18 2010-06-18 窒化物半導体素子

Country Status (3)

Country Link
US (1) US8247794B2 (https=)
JP (1) JP5475569B2 (https=)
TW (1) TWI476913B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8785904B2 (en) * 2011-04-20 2014-07-22 Invenlux Corporation Light-emitting device with low forward voltage and method for fabricating the same
KR101982626B1 (ko) * 2012-10-17 2019-05-27 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치
CN116438665B (zh) * 2020-11-11 2025-04-25 苏州晶湛半导体有限公司 LED结构及其GaN基衬底、GaN基衬底的制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3987879B2 (ja) * 1998-07-31 2007-10-10 シャープ株式会社 窒化物半導体発光素子とその製造方法
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
JP3819398B2 (ja) * 2004-04-27 2006-09-06 三菱電線工業株式会社 半導体発光素子およびその製造方法
JP4000172B2 (ja) * 2006-08-23 2007-10-31 三菱電線工業株式会社 ＧａＮ系半導体発光素子の製造方法
WO2008128181A1 (en) * 2007-04-12 2008-10-23 The Regents Of The University Of California Method for deposition of (al,in,ga,b)n
TWI401729B (zh) * 2008-10-16 2013-07-11 榮創能源科技股份有限公司 阻斷半導體差排缺陷之方法
TWM373005U (en) * 2009-06-26 2010-01-21 Sino American Silicon Prod Inc Gallium-nitride LED structure
JP5627871B2 (ja) * 2009-10-30 2014-11-19 フューチャー ライト リミテッド ライアビリティ カンパニー 半導体素子およびその製造方法

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