JP2012003254A5 - - Google Patents

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Publication number
JP2012003254A5
JP2012003254A5 JP2011110265A JP2011110265A JP2012003254A5 JP 2012003254 A5 JP2012003254 A5 JP 2012003254A5 JP 2011110265 A JP2011110265 A JP 2011110265A JP 2011110265 A JP2011110265 A JP 2011110265A JP 2012003254 A5 JP2012003254 A5 JP 2012003254A5
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JP
Japan
Prior art keywords
thin film
light
pulsed laser
evaluation
transfer mask
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Application number
JP2011110265A
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English (en)
Japanese (ja)
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JP5917019B2 (ja
JP2012003254A (ja
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Priority to JP2011110265A priority Critical patent/JP5917019B2/ja
Priority claimed from JP2011110265A external-priority patent/JP5917019B2/ja
Publication of JP2012003254A publication Critical patent/JP2012003254A/ja
Publication of JP2012003254A5 publication Critical patent/JP2012003254A5/ja
Application granted granted Critical
Publication of JP5917019B2 publication Critical patent/JP5917019B2/ja
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JP2011110265A 2010-05-19 2011-05-17 薄膜の評価方法、及びマスクブランクの製造方法 Active JP5917019B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011110265A JP5917019B2 (ja) 2010-05-19 2011-05-17 薄膜の評価方法、及びマスクブランクの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010115833 2010-05-19
JP2010115833 2010-05-19
JP2011110265A JP5917019B2 (ja) 2010-05-19 2011-05-17 薄膜の評価方法、及びマスクブランクの製造方法

Publications (3)

Publication Number Publication Date
JP2012003254A JP2012003254A (ja) 2012-01-05
JP2012003254A5 true JP2012003254A5 (OSRAM) 2014-06-19
JP5917019B2 JP5917019B2 (ja) 2016-05-11

Family

ID=44972751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011110265A Active JP5917019B2 (ja) 2010-05-19 2011-05-17 薄膜の評価方法、及びマスクブランクの製造方法

Country Status (2)

Country Link
US (2) US8450030B2 (OSRAM)
JP (1) JP5917019B2 (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9224643B2 (en) * 2011-09-19 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for tunable interconnect scheme
US8974988B2 (en) 2012-04-20 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
CN110673435B (zh) * 2013-01-15 2023-04-21 Hoya株式会社 掩膜板坯料、相移掩膜板及半导体器件的制造方法
EP2991083B1 (en) * 2013-04-26 2021-06-09 Showa Denko K.K. Method for manufacturing electroconductive pattern and electroconductive pattern-formed substrate
DE102016203442A1 (de) * 2016-03-02 2017-09-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives
CN111148596B (zh) 2017-10-04 2022-09-16 极光先进雷射株式会社 激光加工方法以及激光加工系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07271014A (ja) * 1994-03-28 1995-10-20 Toppan Printing Co Ltd フォトマスクブランク及びその製造方法、並びにこのフォトマスクブランクを使用して製造したフォトマスク
JP3472528B2 (ja) * 1999-06-11 2003-12-02 Hoya株式会社 位相シフトマスク及び位相シフトマスクブランク
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP4466805B2 (ja) 2001-03-01 2010-05-26 信越化学工業株式会社 位相シフトマスクブランク及び位相シフトマスク
JP4741986B2 (ja) * 2006-06-30 2011-08-10 株式会社日立ハイテクノロジーズ 光学式検査方法および光学式検査装置
WO2009022428A1 (ja) * 2007-08-16 2009-02-19 Asahi Glass Company, Limited ガラス基板表面から異物を除去する方法

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