JP2011527506A - プラズマ処理チャンバ内のその場(in−situ)アーク放電事象を検出するための受動型容量結合静電(CCE)プローブ構成 - Google Patents
プラズマ処理チャンバ内のその場(in−situ)アーク放電事象を検出するための受動型容量結合静電(CCE)プローブ構成 Download PDFInfo
- Publication number
- JP2011527506A JP2011527506A JP2011517509A JP2011517509A JP2011527506A JP 2011527506 A JP2011527506 A JP 2011527506A JP 2011517509 A JP2011517509 A JP 2011517509A JP 2011517509 A JP2011517509 A JP 2011517509A JP 2011527506 A JP2011527506 A JP 2011527506A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- voltage
- probe
- situ
- arcing event
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 title claims abstract description 87
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 64
- 238000012545 processing Methods 0.000 title claims abstract description 42
- 238000010891 electric arc Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 66
- 239000003990 capacitor Substances 0.000 claims abstract description 49
- 238000005259 measurement Methods 0.000 claims abstract description 37
- 238000001514 detection method Methods 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000008859 change Effects 0.000 claims description 18
- 238000004422 calculation algorithm Methods 0.000 claims description 14
- 230000009471 action Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 76
- 150000002500 ions Chemical class 0.000 description 24
- 238000012512 characterization method Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000013178 mathematical model Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010223 real-time analysis Methods 0.000 description 2
- 239000001119 stannous chloride Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000012897 Levenberg–Marquardt algorithm Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000001175 calcium sulphate Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010252 digital analysis Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L sodium sulphate Substances [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/34—Testing dynamo-electric machines
- G01R31/343—Testing dynamo-electric machines in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
- H02H1/0015—Using arc detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/1272—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of cable, line or wire insulation, e.g. using partial discharge measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/34—Testing dynamo-electric machines
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/44—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to the rate of change of electrical quantities
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【選択図】図1
Description
Claims (20)
- 基板処理中にプラズマ処理システムの処理チャンバ内のその場(in-situ)アーク放電事象を検出するための構成であって、
前記処理チャンバの表面上に配され、少なくとも1つのプラズマプロセスパラメータを測定するように構成されたプローブ構成であって、
プラズマ対向センサと、
測定コンデンサと、
を含み、前記プラズマ対向センサは、前記測定コンデンサの第1の板に接続されたプローブ構成と、
前記測定コンデンサの第2の板に接続され、前記測定コンデンサを流れる誘起電流を、前記その場アーク放電事象を検出するために処理されるデジタル信号の集合に変換するように構成された検出構成と、
を備える構成。 - 請求項1に記載の構成であって、
前記プラズマ対向センサは、上部電極内に配される、構成。 - 請求項1に記載の構成であって、
前記プラズマ対向センサは、前記処理チャンバのチャンバ壁上に配される、構成。 - 請求項1に記載の構成であって、
前記プラズマ対向センサは、伝導性材料で作成される、構成。 - 請求項1に記載の構成であって、
前記プラズマ対向センサは、容量結合静電(CCE)プローブヘッドである、構成。 - 請求項1に記載の構成であって、
前記検出構成は、
少なくとも、前記プローブ構成を流れる前記誘起電流をアナログ電圧信号の集合に変換するように構成された電流・電圧変換器と、
少なくとも、前記アナログ電圧信号の集合を前記デジタル信号の集合に変換するように構成されたアナログ・デジタル変換器と、
前記その場アーク放電事象を示す高周波摂動を検出するために、少なくとも、前記デジタル信号の集合を処理するように構成された信号プロセッサと、
を含む、構成。 - 請求項6に記載の構成であって、
前記高周波摂動は、正の方向及び負の方向の両方に振幅の逸脱を有する、構成。 - 請求項1に記載の構成であって、更に、
前記その場アーク放電事象が検出されたときに前記検出構成からメッセージを受信するように構成され、前記その場アーク放電事象を解消するために修正措置をとるように構成されたツール制御回路を備える構成。 - 請求項1に記載の構成であって、更に、
前記測定コンデンサの前記第1の板に接続され、少なくとも、電圧測定結果を収集するように及び前記プラズマ対向センサの電位変化を測定するように構成された電圧測定器を備える構成。 - 請求項9に記載の構成であって、
前記電圧測定器によって収集された電圧測定結果は、前記その場アーク放電事象を検出するために信号処理用にデジタル信号に変換される、構成。 - 基板処理中にプラズマ処理システムの処理チャンバ内のその場(in-situ)アーク放電事象を検出するための方法であって、
測定コンデンサを流れる誘起電流信号を含むプロセスデータの集合を収集することと、
前記誘起電流信号をアナログ電圧信号の集合に変換することと、
前記アナログ電圧信号の集合をデジタル信号の集合に変換することと、
前記その場アーク放電事象を示す高周波変動を検出するために、前記デジタル信号の集合を解析することと、
を備える方法。 - 請求項11に記載の方法であって、更に、
前記誘起電流信号の変化率を所定の閾値と比較することを備え、
前記その場アーク放電事象は、前記変化率が前記所定の閾値の外である場合に存在する、方法。 - 請求項12に記載の方法であって、更に、
前記その場アーク放電事象が検出されたときに、前記その場アーク放電事象を解消するために修正措置をとるように構成されたツールコントローラ回路に、メッセージを送信することを備える方法。 - 請求項11に記載の方法であって、更に、
基板処理中における電位変化を決定するために、プラズマ対向センサからの電圧信号を測定することを備える方法。 - 請求項14に記載の方法であって、更に、
前記電圧測定データをデジタル信号に変換することを備える方法。 - 請求項15に記載の方法であって、更に、
前記その場アーク放電事象を示す前記高周波変動を検出するために、前記デジタル信号を解析することを備える方法。 - 請求項16に記載の方法であって、更に、
前記電圧信号の変化率を所定の閾値と比較することを備え、
前記その場アーク放電事象は、前記変化率が前記所定の閾値の外である場合に存在する、方法。 - 請求項11に記載の方法であって、更に、
周期的高周波(RF)パルス列の集合を前記測定コンデンサに印加することと、
前記測定コンデンサの電流減衰信号を測定することと、
を備える方法。 - 請求項18に記載の方法であって、更に、
前記所定の閾値を上回る前記高周波変動を検出するために、前記前記測定コンデンサの電流減衰信号に対してアーク放電検出アルゴリズムを適用することを備える方法。 - 請求項19に記載の方法であって、更に、
前記電流減衰信号の変化率を所定の閾値と比較することを備え、
前記その場アーク放電事象は、前記変化率が前記所定の閾値の外である場合に存在する、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7873108P | 2008-07-07 | 2008-07-07 | |
US61/078,731 | 2008-07-07 | ||
PCT/US2009/049756 WO2010005929A2 (en) | 2008-07-07 | 2009-07-07 | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting in-situ arcing events in a plasma processing chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011527506A true JP2011527506A (ja) | 2011-10-27 |
JP5734184B2 JP5734184B2 (ja) | 2015-06-17 |
Family
ID=41504594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011517509A Active JP5734184B2 (ja) | 2008-07-07 | 2009-07-07 | プラズマ処理チャンバ内のその場(in−situ)アーク放電事象を検出するための構成、及び、アーク放電事象を検出する方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8159233B2 (ja) |
JP (1) | JP5734184B2 (ja) |
KR (1) | KR101606734B1 (ja) |
CN (1) | CN102714167B (ja) |
TW (1) | TWI511622B (ja) |
WO (1) | WO2010005929A2 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7829468B2 (en) * | 2006-06-07 | 2010-11-09 | Lam Research Corporation | Method and apparatus to detect fault conditions of plasma processing reactor |
US8849585B2 (en) * | 2008-06-26 | 2014-09-30 | Lam Research Corporation | Methods for automatically characterizing a plasma |
JP5643198B2 (ja) * | 2008-07-07 | 2014-12-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理チャンバ内の膜を特徴付けるためのrfバイアス容量結合静電(rfb−cce)プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 |
TWI467623B (zh) | 2008-07-07 | 2015-01-01 | Lam Res Corp | 於電漿處理系統之處理腔室內識別一穩定電漿的方法及裝置、及其電腦可讀儲存媒體 |
WO2010005932A2 (en) * | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber |
WO2010005931A2 (en) * | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof |
TWI511622B (zh) * | 2008-07-07 | 2015-12-01 | Lam Res Corp | 用來偵測電漿處理腔室中之原位電弧事件的被動電容耦合靜電探針裝置 |
JP5734185B2 (ja) * | 2008-07-07 | 2015-06-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理チャンバ内のプラズマ不安定性事象を検出するための構成、及び、プラズマ不安定性事象を検出する方法 |
KR20110083823A (ko) * | 2010-01-15 | 2011-07-21 | 삼성전자주식회사 | 아크노이즈 검출 회로, 이를 포함하는 광원 구동 장치 및 이를 이용하는 광원 구동 방법 |
CN102346229A (zh) * | 2010-08-04 | 2012-02-08 | 河南省电力公司安阳供电公司 | 电力塔电弧放电监测系统 |
KR101303040B1 (ko) * | 2012-02-28 | 2013-09-03 | 주식회사 뉴파워 프라즈마 | 플라즈마 챔버의 아크 검출 방법 및 장치 |
US9017513B2 (en) | 2012-11-07 | 2015-04-28 | Lam Research Corporation | Plasma monitoring probe assembly and processing chamber incorporating the same |
EP2936542B1 (de) * | 2012-12-18 | 2018-02-28 | TRUMPF Hüttinger GmbH + Co. KG | Arclöschverfahren und leistungsversorgungssystem mit einem leistungswandler |
US10101386B2 (en) * | 2014-02-14 | 2018-10-16 | Texas Instruments Incorporated | Real time semiconductor process excursion monitor |
US10950421B2 (en) * | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
US10564215B2 (en) | 2014-07-01 | 2020-02-18 | Raja Technologies Inc. | System and method of semiconductor characterization |
US10352989B2 (en) | 2014-07-01 | 2019-07-16 | Raja Technologies Inc. | System and method of semiconductor characterization |
US9002677B1 (en) * | 2014-07-01 | 2015-04-07 | Raja Technologies | System and method of semiconductor characterization |
CN104360522B (zh) * | 2014-11-25 | 2018-05-04 | 合肥鑫晟光电科技有限公司 | 液晶模组及显示装置 |
EP3035365A1 (en) * | 2014-12-19 | 2016-06-22 | TRUMPF Huettinger Sp. Z o. o. | Method of detecting an arc occurring during the power supply of a plasma process, control unit for a plasma power supply, and plasma power supply |
CN106238870B (zh) * | 2016-07-26 | 2018-02-23 | 北京工业大学 | 一种对进式电弧特性检测装置及方法 |
CN115662868A (zh) * | 2017-07-07 | 2023-01-31 | 先进能源工业公司 | 等离子体功率输送系统的周期间控制系统及其操作方法 |
US11153960B1 (en) * | 2018-06-08 | 2021-10-19 | Innoveering, LLC | Plasma-based electro-optical sensing and methods |
US11156644B2 (en) | 2019-01-03 | 2021-10-26 | International Business Machines Corporation | In situ probing of a discrete time analog circuit |
CN115835467B (zh) * | 2022-12-26 | 2024-03-08 | 武汉大学 | 一种基于主被动融合的等离子体三维定位系统及方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997011587A1 (fr) * | 1995-09-19 | 1997-03-27 | Centre National De La Recherche Scientifique | Procede et dispositif de mesure d'un flux d'ions dans un plasma |
JP2000268993A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | プラズマ計測用プローブ,プラズマ計測装置及びプラズマ生成装置 |
JP2002324783A (ja) * | 2001-04-25 | 2002-11-08 | Toshiba Corp | 異常放電検出方法 |
JP2003318115A (ja) * | 2002-04-24 | 2003-11-07 | Japan Science & Technology Corp | 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置 |
WO2004003968A2 (en) * | 2002-06-28 | 2004-01-08 | Tokyo Electron Limited | Method and system for arc suppression in a plasma processing system |
WO2007145801A2 (en) * | 2006-06-07 | 2007-12-21 | Lam Research Corporation | Method and apparatus to detect fault conditions of a plasma processing reactor |
Family Cites Families (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2008A (en) * | 1841-03-18 | Gas-lamp eok conducting gas pkom ah elevated buhner to one below it | ||
US2002A (en) * | 1841-03-12 | Tor and planter for plowing | ||
US2003A (en) * | 1841-03-12 | Improvement in horizontal windivhlls | ||
US2006A (en) * | 1841-03-16 | Clamp for crimping leather | ||
US2007A (en) * | 1841-03-16 | Improvement in the mode of harvesting grain | ||
US2005A (en) * | 1841-03-16 | Improvement in the manner of constructing molds for casting butt-hinges | ||
US1000000A (en) * | 1910-04-25 | 1911-08-08 | Francis H Holton | Vehicle-tire. |
US4595487A (en) | 1985-03-18 | 1986-06-17 | Kennecott Corporation | Sensing probe holder system |
US5473162A (en) | 1987-10-26 | 1995-12-05 | Baylor University | Infrared emission detection of a gas |
KR0129663B1 (ko) | 1988-01-20 | 1998-04-06 | 고다까 토시오 | 에칭 장치 및 방법 |
US4982067A (en) | 1988-11-04 | 1991-01-01 | Marantz Daniel Richard | Plasma generating apparatus and method |
DE3914065A1 (de) | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
JP2859308B2 (ja) | 1989-08-02 | 1999-02-17 | 三井化学株式会社 | プラズマパラメーターの測定方法 |
US6165311A (en) | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US6036877A (en) | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
US5175472A (en) | 1991-12-30 | 1992-12-29 | Comdel, Inc. | Power monitor of RF plasma |
JP3292531B2 (ja) | 1993-01-15 | 2002-06-17 | 忠弘 大見 | 高周波励起プラズマの計測装置 |
JPH0737817A (ja) | 1993-06-28 | 1995-02-07 | Sony Corp | プラズマ計測用プローブ及びこれを用いたプラズマ計測方法 |
US6345589B1 (en) | 1996-03-29 | 2002-02-12 | Applied Materials, Inc. | Method and apparatus for forming a borophosphosilicate film |
US6024831A (en) | 1997-08-20 | 2000-02-15 | Vanguard International Semiconductor Corporation | Method and apparatus for monitoring plasma chamber condition by observing plasma stability |
JPH11354509A (ja) | 1998-04-07 | 1999-12-24 | Seiko Epson Corp | プラズマエッチングの終点検出方法及びプラズマエッチング装置 |
JP2000003909A (ja) | 1998-06-15 | 2000-01-07 | Kishimoto Sangyo Co Ltd | 半導体デバイス用絶縁膜および半導体デバイス |
JP2000031072A (ja) | 1998-07-10 | 2000-01-28 | Seiko Epson Corp | プラズマモニタ方法及び半導体製造装置 |
US6965506B2 (en) | 1998-09-30 | 2005-11-15 | Lam Research Corporation | System and method for dechucking a workpiece from an electrostatic chuck |
US6326794B1 (en) | 1999-01-14 | 2001-12-04 | International Business Machines Corporation | Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement |
JP2001144071A (ja) | 1999-11-10 | 2001-05-25 | Toshiba Corp | プラズマ処理方法及びその装置 |
US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
TW483037B (en) | 2000-03-24 | 2002-04-11 | Hitachi Ltd | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
US7137354B2 (en) | 2000-08-11 | 2006-11-21 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
JP4240259B2 (ja) | 2000-08-21 | 2009-03-18 | 富士電機システムズ株式会社 | プラズマ電位測定方法と測定用プローブ |
JP3968211B2 (ja) | 2000-08-31 | 2007-08-29 | 株式会社日立製作所 | 微弱磁場計測デュワー |
US6833710B2 (en) | 2000-10-27 | 2004-12-21 | Axcelis Technologies, Inc. | Probe assembly for detecting an ion in a plasma generated in an ion source |
KR100378187B1 (ko) | 2000-11-09 | 2003-03-29 | 삼성전자주식회사 | 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법 |
JP4128339B2 (ja) | 2001-03-05 | 2008-07-30 | 株式会社日立製作所 | 試料処理装置用プロセスモニタ及び試料の製造方法 |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
US7960670B2 (en) | 2005-05-03 | 2011-06-14 | Kla-Tencor Corporation | Methods of and apparatuses for measuring electrical parameters of a plasma process |
US7374636B2 (en) | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
US7093560B2 (en) | 2002-04-17 | 2006-08-22 | Lam Research Corporation | Techniques for reducing arcing-related damage in a clamping ring of a plasma processing system |
US20030210510A1 (en) | 2002-05-07 | 2003-11-13 | Hann Thomas C. | Dynamic dechucking |
US20030213559A1 (en) | 2002-05-20 | 2003-11-20 | Applied Science And Technology, Inc. | Stabilization of electronegative plasmas with feedback control of RF generator systems |
WO2003102724A2 (en) | 2002-05-29 | 2003-12-11 | Tokyo Electron Limited | Method and system for data handling, storage and manipulation |
US6894474B2 (en) | 2002-06-07 | 2005-05-17 | Applied Materials, Inc. | Non-intrusive plasma probe |
AU2003247538A1 (en) | 2002-07-03 | 2004-01-23 | Tokyo Electron Limited | Method and apparatus for non-invasive measurement and analys of semiconductor plasma parameters |
KR20040024720A (ko) | 2002-09-16 | 2004-03-22 | 삼성전자주식회사 | 건식 식각 장치의 플라즈마 감지 시스템 |
US7452824B2 (en) | 2003-05-16 | 2008-11-18 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
US7067432B2 (en) | 2003-06-26 | 2006-06-27 | Applied Materials, Inc. | Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing |
US6939726B2 (en) | 2003-08-04 | 2005-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via array monitor and method of monitoring induced electrical charging |
US6902646B2 (en) | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
JP4364667B2 (ja) | 2004-02-13 | 2009-11-18 | 東京エレクトロン株式会社 | 溶射部材、電極、およびプラズマ処理装置 |
US20050212450A1 (en) * | 2004-03-16 | 2005-09-29 | Scientific Systems Research Limited | Method and system for detecting electrical arcing in a plasma process powered by an AC source |
US7292045B2 (en) * | 2004-09-04 | 2007-11-06 | Applied Materials, Inc. | Detection and suppression of electrical arcing |
US7334477B1 (en) * | 2004-12-22 | 2008-02-26 | Lam Research Corporation | Apparatus and methods for the detection of an arc in a plasma processing system |
US7571698B2 (en) | 2005-01-10 | 2009-08-11 | Applied Materials, Inc. | Low-frequency bias power in HDP-CVD processes |
US7319316B2 (en) | 2005-06-29 | 2008-01-15 | Lam Research Corporation | Apparatus for measuring a set of electrical characteristics in a plasma |
JP2007037817A (ja) | 2005-08-04 | 2007-02-15 | Matsushita Electric Ind Co Ltd | 電気掃除機用集塵袋及び電気掃除機 |
KR20070035346A (ko) | 2005-09-27 | 2007-03-30 | 삼성전자주식회사 | 플라즈마 감지 시스템이 구비된 플라즈마 처리장치 |
KR100784824B1 (ko) * | 2005-11-04 | 2007-12-14 | 한국표준과학연구원 | 플라즈마 진단장치 및 진단방법 |
DE502005006550D1 (de) * | 2005-12-22 | 2009-03-12 | Huettinger Elektronik Gmbh | Verfahren und Vorrichtung zur Arcerkennung in einem Plasmaprozess |
US7479207B2 (en) | 2006-03-15 | 2009-01-20 | Lam Research Corporation | Adjustable height PIF probe |
US7413672B1 (en) | 2006-04-04 | 2008-08-19 | Lam Research Corporation | Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement |
US7722778B2 (en) | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
JP4754419B2 (ja) | 2006-07-03 | 2011-08-24 | 学校法人立命館 | プラズマ異常放電診断方法、プラズマ異常放電診断システム及びコンピュータプログラム |
US20080008842A1 (en) * | 2006-07-07 | 2008-01-10 | Applied Materials, Inc. | Method for plasma processing |
KR20080048310A (ko) * | 2006-11-28 | 2008-06-02 | 삼성전자주식회사 | 반도체 소자 제조용 플라즈마 장치 |
US8217299B2 (en) * | 2007-02-22 | 2012-07-10 | Advanced Energy Industries, Inc. | Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch |
US20090007642A1 (en) | 2007-07-05 | 2009-01-08 | Baxter International Inc. | Dialysis fluid measurement method and apparatus using conductive contacts |
US8849585B2 (en) | 2008-06-26 | 2014-09-30 | Lam Research Corporation | Methods for automatically characterizing a plasma |
TWI511622B (zh) | 2008-07-07 | 2015-12-01 | Lam Res Corp | 用來偵測電漿處理腔室中之原位電弧事件的被動電容耦合靜電探針裝置 |
WO2010005932A2 (en) | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber |
WO2010005931A2 (en) | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof |
TWI467623B (zh) | 2008-07-07 | 2015-01-01 | Lam Res Corp | 於電漿處理系統之處理腔室內識別一穩定電漿的方法及裝置、及其電腦可讀儲存媒體 |
JP5643198B2 (ja) | 2008-07-07 | 2014-12-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理チャンバ内の膜を特徴付けるためのrfバイアス容量結合静電(rfb−cce)プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 |
JP5734185B2 (ja) | 2008-07-07 | 2015-06-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理チャンバ内のプラズマ不安定性事象を検出するための構成、及び、プラズマ不安定性事象を検出する方法 |
-
2009
- 2009-07-07 TW TW098122911A patent/TWI511622B/zh not_active IP Right Cessation
- 2009-07-07 JP JP2011517509A patent/JP5734184B2/ja active Active
- 2009-07-07 US US12/498,934 patent/US8159233B2/en active Active
- 2009-07-07 KR KR1020117000366A patent/KR101606734B1/ko active IP Right Grant
- 2009-07-07 WO PCT/US2009/049756 patent/WO2010005929A2/en active Application Filing
- 2009-07-07 CN CN200980126995.3A patent/CN102714167B/zh active Active
-
2012
- 2012-04-06 US US13/441,187 patent/US9129779B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997011587A1 (fr) * | 1995-09-19 | 1997-03-27 | Centre National De La Recherche Scientifique | Procede et dispositif de mesure d'un flux d'ions dans un plasma |
JP2000268993A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | プラズマ計測用プローブ,プラズマ計測装置及びプラズマ生成装置 |
JP2002324783A (ja) * | 2001-04-25 | 2002-11-08 | Toshiba Corp | 異常放電検出方法 |
JP2003318115A (ja) * | 2002-04-24 | 2003-11-07 | Japan Science & Technology Corp | 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置 |
WO2004003968A2 (en) * | 2002-06-28 | 2004-01-08 | Tokyo Electron Limited | Method and system for arc suppression in a plasma processing system |
WO2007145801A2 (en) * | 2006-06-07 | 2007-12-21 | Lam Research Corporation | Method and apparatus to detect fault conditions of a plasma processing reactor |
Also Published As
Publication number | Publication date |
---|---|
WO2010005929A2 (en) | 2010-01-14 |
TWI511622B (zh) | 2015-12-01 |
KR20110039241A (ko) | 2011-04-15 |
US20120259562A1 (en) | 2012-10-11 |
WO2010005929A3 (en) | 2010-04-22 |
US9129779B2 (en) | 2015-09-08 |
US8159233B2 (en) | 2012-04-17 |
JP5734184B2 (ja) | 2015-06-17 |
CN102714167A (zh) | 2012-10-03 |
TW201010523A (en) | 2010-03-01 |
US20100007359A1 (en) | 2010-01-14 |
KR101606734B1 (ko) | 2016-03-28 |
CN102714167B (zh) | 2015-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5734184B2 (ja) | プラズマ処理チャンバ内のその場(in−situ)アーク放電事象を検出するための構成、及び、アーク放電事象を検出する方法 | |
JP5734185B2 (ja) | プラズマ処理チャンバ内のプラズマ不安定性事象を検出するための構成、及び、プラズマ不安定性事象を検出する方法 | |
JP5643198B2 (ja) | プラズマ処理チャンバ内の膜を特徴付けるためのrfバイアス容量結合静電(rfb−cce)プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 | |
JP5265770B2 (ja) | プラズマ処理チャンバ内のデチャックを検出するための容量結合静電(cce)プローブ構成、それに関連する方法、及び、その方法を実行するコンピュータ可読コードを格納するプログラム格納媒体 | |
JP5427888B2 (ja) | プラズマ処理チャンバ内のストライクステップを検出するための容量結合静電(cce)プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 | |
JP5726730B2 (ja) | プラズマを自動的に特徴付けるための方法、及び、その方法の少なくとも1つを実行するコンピュータ可読コードを格納するプログラム格納媒体 | |
JP2011527523A5 (ja) | プラズマ処理チャンバ内の膜を特徴付けるためのrfバイアス容量結合静電(rfb−cce)プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120613 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140409 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141201 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150324 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150414 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5734184 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |