JP2011526239A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011526239A5 JP2011526239A5 JP2011516725A JP2011516725A JP2011526239A5 JP 2011526239 A5 JP2011526239 A5 JP 2011526239A5 JP 2011516725 A JP2011516725 A JP 2011516725A JP 2011516725 A JP2011516725 A JP 2011516725A JP 2011526239 A5 JP2011526239 A5 JP 2011526239A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- fine particles
- particles
- silane
- larger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010419 fine particle Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7637108P | 2008-06-27 | 2008-06-27 | |
| US61/076,371 | 2008-06-27 | ||
| PCT/US2009/048916 WO2009158650A1 (en) | 2008-06-27 | 2009-06-26 | Methods for increasing polycrystalline silicon reactor productivity by recycle of silicon fines |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011526239A JP2011526239A (ja) | 2011-10-06 |
| JP2011526239A5 true JP2011526239A5 (OSRAM) | 2012-08-09 |
Family
ID=41066376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011516725A Pending JP2011526239A (ja) | 2008-06-27 | 2009-06-26 | シリコン微粒子のリサイクルにより多結晶シリコン反応炉の生産性を向上させる方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090324819A1 (OSRAM) |
| EP (1) | EP2310317A1 (OSRAM) |
| JP (1) | JP2011526239A (OSRAM) |
| KR (1) | KR20110037967A (OSRAM) |
| CN (1) | CN102076607A (OSRAM) |
| TW (1) | TW201006950A (OSRAM) |
| WO (1) | WO2009158650A1 (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010017231A1 (en) * | 2008-08-04 | 2010-02-11 | Hariharan Alleppey V | Method to convert waste silicon to high purity silicon |
| CN103787336B (zh) | 2008-09-16 | 2016-09-14 | 储晞 | 生产高纯颗粒硅的方法 |
| US8715597B2 (en) | 2010-12-20 | 2014-05-06 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems that involve disproportionation operations |
| US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| WO2013049325A1 (en) | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| NO20231206A1 (no) | 2011-09-30 | 2014-04-23 | Corner Star Ltd | Produksjon av polykrystallinsk silisium ved termisk nedbrytning av silan i en hvirvelsjiktreaktor |
| JP2014001096A (ja) | 2012-06-18 | 2014-01-09 | Shin Etsu Chem Co Ltd | 多結晶シリコンの結晶配向度評価方法、多結晶シリコン棒の選択方法、多結晶シリコン棒、多結晶シリコン塊、および、単結晶シリコンの製造方法 |
| WO2014106090A1 (en) | 2012-12-31 | 2014-07-03 | Sunedison, Inc. | Improving operation of fluidized bed reactors by optimizing temperature gradients via particle size distribution control |
| US10252916B2 (en) | 2014-09-04 | 2019-04-09 | Corner Star Limited | Methods for separating halosilanes |
| CN114132933A (zh) * | 2021-11-02 | 2022-03-04 | 江苏中能硅业科技发展有限公司 | 一种颗粒硅生产方法和系统 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3012861A (en) * | 1960-01-15 | 1961-12-12 | Du Pont | Production of silicon |
| US3012862A (en) * | 1960-08-16 | 1961-12-12 | Du Pont | Silicon production |
| US4818495A (en) * | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
| US4820587A (en) * | 1986-08-25 | 1989-04-11 | Ethyl Corporation | Polysilicon produced by a fluid bed process |
| US4784840A (en) * | 1986-08-25 | 1988-11-15 | Ethyl Corporation | Polysilicon fluid bed process and product |
| JPH01239013A (ja) * | 1988-03-22 | 1989-09-25 | Nkk Corp | 多結晶シリコンの製造方法及び装置 |
| CA2038175A1 (en) * | 1990-04-02 | 1991-10-03 | Albemarle Corporation | Polysilicon and process therefor |
| DE10063862A1 (de) * | 2000-12-21 | 2002-07-11 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularen Silizium |
| DE10124848A1 (de) * | 2001-05-22 | 2002-11-28 | Solarworld Ag | Verfahren zur Herstellung von hochreinem, granularem Silizium in einer Wirbelschicht |
| US7291222B2 (en) * | 2004-06-18 | 2007-11-06 | Memc Electronic Materials, Inc. | Systems and methods for measuring and reducing dust in granular material |
| US20060105105A1 (en) * | 2004-11-12 | 2006-05-18 | Memc Electronic Materials, Inc. | High purity granular silicon and method of manufacturing the same |
-
2009
- 2009-06-26 EP EP09771181A patent/EP2310317A1/en not_active Ceased
- 2009-06-26 US US12/492,706 patent/US20090324819A1/en not_active Abandoned
- 2009-06-26 CN CN2009801245747A patent/CN102076607A/zh active Pending
- 2009-06-26 JP JP2011516725A patent/JP2011526239A/ja active Pending
- 2009-06-26 KR KR1020107029115A patent/KR20110037967A/ko not_active Withdrawn
- 2009-06-26 WO PCT/US2009/048916 patent/WO2009158650A1/en not_active Ceased
- 2009-06-29 TW TW098121897A patent/TW201006950A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Luo et al. | Growth mechanism of hexagonal-shape graphene flakes with zigzag edges | |
| Liu et al. | Growth morphology and properties of metals on graphene | |
| WO2012002995A3 (en) | Thin films and methods of making them using cyclohexasilane | |
| PL2250298T3 (pl) | Sposób i system do osadzania metalu lub metaloidu na nanorurkach węglowych | |
| MY183844A (en) | Zeolite film and process for producing zeolite film | |
| EP2392547A3 (en) | Method of graphene manufacturing | |
| JP2013212952A5 (OSRAM) | ||
| GB2503847A (en) | Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates | |
| JP2012104515A5 (OSRAM) | ||
| WO2011062357A3 (ko) | 샤워헤드 어셈블리 및 이를 구비한 박막증착장치 | |
| JP2012505069A5 (OSRAM) | ||
| WO2015038267A3 (en) | Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition | |
| MY159243A (en) | Single crystal diamond material | |
| JP2012118511A5 (OSRAM) | ||
| JP2011190124A5 (OSRAM) | ||
| JP2011515204A5 (OSRAM) | ||
| SA515360699B1 (ar) | طريقة لترسيب سيليكون متعدد البللورات | |
| WO2010086600A3 (en) | Providing gas for use in forming a carbon nanomaterial | |
| JP2009283922A5 (OSRAM) | ||
| CN102505113B (zh) | 基于Cl2反应的大面积石墨烯制备方法 | |
| WO2013103332A3 (en) | Liquid silane-based compositions and methods of fabrication | |
| PL396428A1 (pl) | Sposób wytwarzania nanodrutów z krzemku palladu | |
| TW200600452A (en) | A powder containing carbon nanotubes or carbon nano-fibers and its manufacturing method | |
| Xu et al. | Nucleation and growth of nanocrystalline diamond on NaCl substrate by RF-PECVD | |
| Apanasenko | The calculation of material balance of metal-lurgical production using «Excel» |