JP2011523214A - 半導体エピタキシーにおけるメモリ効果の低減方法 - Google Patents
半導体エピタキシーにおけるメモリ効果の低減方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000003446 memory effect Effects 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000000407 epitaxy Methods 0.000 title description 11
- 239000007789 gas Substances 0.000 claims abstract description 50
- 238000006243 chemical reaction Methods 0.000 claims abstract description 44
- 238000011010 flushing procedure Methods 0.000 claims abstract description 16
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 13
- 150000002367 halogens Chemical class 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 45
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 description 32
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002901 organomagnesium compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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Abstract
Description
マルチウエハ遊星運動誘導加熱CVD反応チャンバにおいて以下の工程条件下でSiCエピタキシャル成長工程を実施した。
Claims (12)
- 半導体材料のエピタキシャル成長の間のメモリ効果を低減する方法であって、
反応チャンバを提供する段階と、
半導体基板を提供する段階と、
前駆体ガスを提供する段階と、
前記反応チャンバにおいて、ドープされた半導体材料のエピタキシャルCVD成長を実施して第1層を形成する段階と、
水素及びハロゲン含有ガスを含む混合ガスで前記反応チャンバを洗い流す段階と、
前記反応チャンバにおいて、ドープされた半導体材料のエピタキシャルCVD成長を実施して第2層を形成する段階と、
を含む方法。 - 前記反応チャンバを約450℃から1800℃の間の温度で洗い流す請求項1に記載の方法。
- 前記反応チャンバを約1300℃から1600℃の間の温度で洗い流す請求項1に記載の方法。
- 前記半導体材料がSiC、GaN、GaAs、及びSiGeから選択される請求項1に記載の方法。
- 前記ハロゲン化ガスがHCl、Cl2、F2、CF4、ClF3、及びHBrから選択される請求項1に記載の方法。
- 前記洗い流す段階の間、前記半導体基板を前記チャンバ内に維持する請求項1に記載の方法。
- 前記洗い流す段階より前に前記チャンバから前記半導体基板を取り出し、前記洗い流す段階の後に戻す請求項1に記載の方法。
- 前記洗い流す段階より前に前記チャンバから前記半導体基板を取り出し、前記洗い流す段階の後に新たな半導体基板と取り替える請求項1に記載の方法。
- ドープされた半導体材料の前記第1層がn型ドープSiCを含み、ドープされた半導体材料の前記第2層がp型ドープSiCを含む請求項1に記載の方法。
- ドープされた半導体材料の前記第1層がp型ドープSiCを含み、ドープされた半導体材料の前記第2層が前記第1層よりも低いドーパント濃度を有するp型ドープSiCを含む請求項1に記載の方法。
- 前記ハロゲン含有ガスの濃度が約0.1から10%の間である請求項1に記載の方法。
- 請求項1に記載の方法によって作製された基板上に形成された炭化ケイ素半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5866008P | 2008-06-04 | 2008-06-04 | |
US61/058,660 | 2008-06-04 | ||
PCT/US2009/045551 WO2009148930A1 (en) | 2008-06-04 | 2009-05-29 | Method of reducing memory effects in semiconductor epitaxy |
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Publication Number | Publication Date |
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JP2011523214A true JP2011523214A (ja) | 2011-08-04 |
JP5478616B2 JP5478616B2 (ja) | 2014-04-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011512535A Active JP5478616B2 (ja) | 2008-06-04 | 2009-05-29 | 半導体エピタキシーにおけるメモリ効果の低減方法 |
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Country | Link |
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US (1) | US8343854B2 (ja) |
EP (1) | EP2304074A1 (ja) |
JP (1) | JP5478616B2 (ja) |
KR (1) | KR20110021986A (ja) |
CN (1) | CN102057078B (ja) |
AU (1) | AU2009255307A1 (ja) |
RU (1) | RU2520283C2 (ja) |
TW (1) | TWI399795B (ja) |
WO (1) | WO2009148930A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014125893A1 (ja) * | 2013-02-14 | 2014-08-21 | セントラル硝子株式会社 | クリーニングガス及びクリーニング方法 |
JP2016004933A (ja) * | 2014-06-18 | 2016-01-12 | 大陽日酸株式会社 | 炭化珪素除去装置 |
JP2017011102A (ja) * | 2015-06-22 | 2017-01-12 | 昭和電工株式会社 | 炭化珪素膜の成膜装置のクリーニング方法 |
JP2017523950A (ja) * | 2014-07-29 | 2017-08-24 | ダウ コーニング コーポレーションDow Corning Corporation | 昇華による大径シリコンカーバイド結晶の製造方法及び関連する半導体sicウェハ |
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CN104878445A (zh) * | 2015-06-15 | 2015-09-02 | 国网智能电网研究院 | 一种低掺杂浓度碳化硅外延的制备方法 |
RU2653398C2 (ru) * | 2016-07-19 | 2018-05-08 | федеральное государственное автономное образовательное учреждение высшего образования "Самарский национальный исследовательский университет имени академика С.П. Королева" | Способ получения пористого слоя гетероструктуры карбида кремния на подложке кремния |
CN106711022B (zh) * | 2016-12-26 | 2019-04-19 | 中国电子科技集团公司第五十五研究所 | 一种生长掺杂界面清晰的碳化硅外延薄膜的制备方法 |
FR3071854A1 (fr) * | 2017-10-03 | 2019-04-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un composant electronique a heterojonction muni d'une couche barriere enterree |
CN117802582A (zh) * | 2024-03-01 | 2024-04-02 | 浙江求是半导体设备有限公司 | 外延炉清洗方法和N型SiC的制备方法 |
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JPH11157989A (ja) * | 1997-11-25 | 1999-06-15 | Toyo Tanso Kk | 気相成長用サセプター及びその製造方法 |
JP2009277757A (ja) * | 2008-05-13 | 2009-11-26 | Denso Corp | 半導体装置の製造方法 |
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WO2014125893A1 (ja) * | 2013-02-14 | 2014-08-21 | セントラル硝子株式会社 | クリーニングガス及びクリーニング方法 |
JP2014154865A (ja) * | 2013-02-14 | 2014-08-25 | Central Glass Co Ltd | クリーニングガス及びクリーニング方法 |
JP2016004933A (ja) * | 2014-06-18 | 2016-01-12 | 大陽日酸株式会社 | 炭化珪素除去装置 |
JP2017523950A (ja) * | 2014-07-29 | 2017-08-24 | ダウ コーニング コーポレーションDow Corning Corporation | 昇華による大径シリコンカーバイド結晶の製造方法及び関連する半導体sicウェハ |
JP2017011102A (ja) * | 2015-06-22 | 2017-01-12 | 昭和電工株式会社 | 炭化珪素膜の成膜装置のクリーニング方法 |
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JP5478616B2 (ja) | 2014-04-23 |
TW201013754A (en) | 2010-04-01 |
KR20110021986A (ko) | 2011-03-04 |
RU2010149457A (ru) | 2012-07-20 |
AU2009255307A2 (en) | 2011-01-20 |
US8343854B2 (en) | 2013-01-01 |
WO2009148930A1 (en) | 2009-12-10 |
AU2009255307A1 (en) | 2009-12-10 |
CN102057078A (zh) | 2011-05-11 |
US20110073874A1 (en) | 2011-03-31 |
TWI399795B (zh) | 2013-06-21 |
RU2520283C2 (ru) | 2014-06-20 |
EP2304074A1 (en) | 2011-04-06 |
CN102057078B (zh) | 2015-04-01 |
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