JP2011517734A5 - - Google Patents
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- Publication number
- JP2011517734A5 JP2011517734A5 JP2011505004A JP2011505004A JP2011517734A5 JP 2011517734 A5 JP2011517734 A5 JP 2011517734A5 JP 2011505004 A JP2011505004 A JP 2011505004A JP 2011505004 A JP2011505004 A JP 2011505004A JP 2011517734 A5 JP2011517734 A5 JP 2011517734A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- channel
- disposed
- head
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000010422 painting Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 229910021360 copper silicide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4466608P | 2008-04-14 | 2008-04-14 | |
| US61/044,666 | 2008-04-14 | ||
| PCT/US2009/002289 WO2009128886A1 (en) | 2008-04-14 | 2009-04-13 | Manufacturing apparatus for depositing a material and an electrode for use therein |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011517734A JP2011517734A (ja) | 2011-06-16 |
| JP2011517734A5 true JP2011517734A5 (https=) | 2011-09-22 |
Family
ID=40756999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011505004A Pending JP2011517734A (ja) | 2008-04-14 | 2009-04-13 | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US20110036292A1 (https=) |
| EP (1) | EP2265883A1 (https=) |
| JP (1) | JP2011517734A (https=) |
| KR (1) | KR20110008078A (https=) |
| CN (1) | CN102047066B (https=) |
| AU (1) | AU2009236677B2 (https=) |
| CA (1) | CA2721192A1 (https=) |
| RU (1) | RU2503905C2 (https=) |
| TW (1) | TWI470718B (https=) |
| WO (1) | WO2009128886A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8784565B2 (en) | 2008-04-14 | 2014-07-22 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
| RU2494579C2 (ru) | 2008-04-14 | 2013-09-27 | Хемлок Семикондактор Корпорейшн | Производственная установка для осаждения материала и электрод для использования в ней |
| KR101543010B1 (ko) * | 2008-06-23 | 2015-08-07 | 지티에이티 코포레이션 | 화학적 기상 증착 반응기에서 튜브 필라멘트들에 대한 척 연결점 및 브릿지 연결점 |
| US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
| CA2768171A1 (en) * | 2009-07-14 | 2011-01-20 | Hemlock Semiconductor Corporation | A method of inhibiting formation of deposits in a manufacturing system |
| JP5579634B2 (ja) * | 2011-01-24 | 2014-08-27 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉および多結晶シリコンの製造方法 |
| WO2014011647A1 (en) * | 2012-07-10 | 2014-01-16 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and a socket for use therein |
| US10001095B2 (en) * | 2013-03-12 | 2018-06-19 | Walbro Llc | Retainer with grounding feature for fuel system component |
| US10450649B2 (en) | 2014-01-29 | 2019-10-22 | Gtat Corporation | Reactor filament assembly with enhanced misalignment tolerance |
| US20160122875A1 (en) * | 2014-11-05 | 2016-05-05 | Rec Silicon Inc | Chemical vapor deposition reactor with filament holding assembly |
| USD917680S1 (en) * | 2017-09-12 | 2021-04-27 | Ian Derek Fawn-Meade | Hot water tank powered titanium anode rod |
| CN110524096B (zh) * | 2019-08-06 | 2024-06-25 | 宝鸡鼎晟真空热技术有限公司 | 用于连接真空焊箱的等离子焊枪 |
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| GB1054141A (https=) * | 1900-01-01 | |||
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| BE564212A (https=) * | 1957-01-25 | |||
| NL238464A (https=) * | 1958-05-29 | |||
| DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
| NL251143A (https=) * | 1959-05-04 | |||
| DE1155759B (de) * | 1959-06-11 | 1963-10-17 | Siemens Ag | Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke |
| DE1264400B (de) * | 1961-01-26 | 1968-03-28 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleitermaterials aus der Gasphase |
| DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| DE2324365C3 (de) * | 1973-05-14 | 1978-05-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper |
| DE2652218A1 (de) * | 1976-11-16 | 1978-05-24 | Wacker Chemitronic | Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium |
| JPS53106626A (en) * | 1977-03-02 | 1978-09-16 | Komatsu Mfg Co Ltd | Method of making high purity rod silicon and appratus therefor |
| JPS53108029A (en) * | 1977-03-03 | 1978-09-20 | Komatsu Mfg Co Ltd | Method of making high purity silicon having uniform shape |
| US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
| US4179530A (en) * | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
| DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
| US4304641A (en) * | 1980-11-24 | 1981-12-08 | International Business Machines Corporation | Rotary electroplating cell with controlled current distribution |
| US4477911A (en) * | 1982-12-02 | 1984-10-16 | Westinghouse Electric Corp. | Integral heat pipe-electrode |
| US4481232A (en) * | 1983-05-27 | 1984-11-06 | The United States Of America As Represented By The Department Of Energy | Method and apparatus for producing high purity silicon |
| US4466864A (en) * | 1983-12-16 | 1984-08-21 | At&T Technologies, Inc. | Methods of and apparatus for electroplating preselected surface regions of electrical articles |
| US4822641A (en) * | 1985-04-30 | 1989-04-18 | Inovan Gmbh & Co. Kg | Method of manufacturing a contact construction material structure |
| SE452862B (sv) * | 1985-06-05 | 1987-12-21 | Aga Ab | Ljusbagselektrod |
| US4707225A (en) * | 1986-01-06 | 1987-11-17 | Rockwell International Corporation | Fluid-cooled channel construction |
| US4805556A (en) * | 1988-01-15 | 1989-02-21 | Union Carbide Corporation | Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane |
| US5096550A (en) * | 1990-10-15 | 1992-03-17 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for spatially uniform electropolishing and electrolytic etching |
| US5906799A (en) * | 1992-06-01 | 1999-05-25 | Hemlock Semiconductor Corporation | Chlorosilane and hydrogen reactor |
| US5227041A (en) * | 1992-06-12 | 1993-07-13 | Digital Equipment Corporation | Dry contact electroplating apparatus |
| DE4243570C1 (de) * | 1992-12-22 | 1994-01-27 | Heraeus Gmbh W C | Elektrischer Kontaktkörper |
| US5422088A (en) * | 1994-01-28 | 1995-06-06 | Hemlock Semiconductor Corporation | Process for hydrogenation of tetrachlorosilane |
| JP3377849B2 (ja) * | 1994-02-02 | 2003-02-17 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | ウエーハ用メッキ装置 |
| DE4424929C2 (de) * | 1994-07-14 | 1997-02-13 | Wacker Chemie Gmbh | Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial |
| US5567300A (en) * | 1994-09-02 | 1996-10-22 | Ibm Corporation | Electrochemical metal removal technique for planarization of surfaces |
| FR2741227A1 (fr) * | 1995-11-14 | 1997-05-16 | Verrerie & Cristallerie | Electrode, notamment destinee a etre utilisee dans des fours de fusion du verre |
| US5807165A (en) * | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
| US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
| NL1005963C2 (nl) * | 1997-05-02 | 1998-11-09 | Asm Int | Verticale oven voor het behandelen van halfgeleidersubstraten. |
| RU2135629C1 (ru) * | 1997-11-12 | 1999-08-27 | Государственное предприятие ВНИИавтогенмаш | Способ повышения долговечности электродных и сопловых устройств и технологический плазматрон для его осуществления |
| US6221155B1 (en) * | 1997-12-15 | 2001-04-24 | Advanced Silicon Materials, Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
| US6544333B2 (en) * | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
| US6004880A (en) * | 1998-02-20 | 1999-12-21 | Lsi Logic Corporation | Method of single step damascene process for deposition and global planarization |
| US6176992B1 (en) * | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
| AU3375000A (en) * | 1999-02-19 | 2000-09-04 | Gt Equipment Technologies Inc. | Method and apparatus for chemical vapor deposition of polysilicon |
| JP4372918B2 (ja) * | 1999-06-30 | 2009-11-25 | パナソニック電工株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP2001156042A (ja) * | 1999-11-29 | 2001-06-08 | Hitachi Ltd | プラズマ処理装置 |
| DE10041564C2 (de) * | 2000-08-24 | 2002-06-27 | Heraeus Noblelight Gmbh | Kühlbares Infrarotstrahlerelement |
| DE10101040A1 (de) * | 2001-01-11 | 2002-07-25 | Wacker Chemie Gmbh | Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
| JP2002231357A (ja) * | 2001-02-06 | 2002-08-16 | Nagano Fujitsu Component Kk | 電気接点およびコネクタ |
| JP4402860B2 (ja) * | 2001-03-28 | 2010-01-20 | 忠弘 大見 | プラズマ処理装置 |
| NL1017849C2 (nl) * | 2001-04-16 | 2002-10-30 | Univ Eindhoven Tech | Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. |
| US6623801B2 (en) * | 2001-07-30 | 2003-09-23 | Komatsu Ltd. | Method of producing high-purity polycrystalline silicon |
| JP3870824B2 (ja) * | 2001-09-11 | 2007-01-24 | 住友電気工業株式会社 | 被処理物保持体、半導体製造装置用サセプタおよび処理装置 |
| JP2004205059A (ja) * | 2002-12-20 | 2004-07-22 | Toyo Radiator Co Ltd | 高耐蝕性熱交換器の製造方法 |
| JP4031782B2 (ja) * | 2004-07-01 | 2008-01-09 | 株式会社大阪チタニウムテクノロジーズ | 多結晶シリコン製造方法およびシード保持電極 |
| JP2007281161A (ja) * | 2006-04-06 | 2007-10-25 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体及び半導体製造装置 |
| US9683286B2 (en) * | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
-
2009
- 2009-04-13 RU RU2010146244/06A patent/RU2503905C2/ru not_active IP Right Cessation
- 2009-04-13 JP JP2011505004A patent/JP2011517734A/ja active Pending
- 2009-04-13 CA CA2721192A patent/CA2721192A1/en not_active Abandoned
- 2009-04-13 AU AU2009236677A patent/AU2009236677B2/en not_active Ceased
- 2009-04-13 WO PCT/US2009/002289 patent/WO2009128886A1/en not_active Ceased
- 2009-04-13 EP EP09733051A patent/EP2265883A1/en not_active Withdrawn
- 2009-04-13 US US12/937,790 patent/US20110036292A1/en not_active Abandoned
- 2009-04-13 KR KR1020107024715A patent/KR20110008078A/ko not_active Ceased
- 2009-04-13 CN CN200980120116.6A patent/CN102047066B/zh not_active Expired - Fee Related
- 2009-04-14 TW TW98112372A patent/TWI470718B/zh not_active IP Right Cessation
-
2014
- 2014-08-12 US US14/457,401 patent/US20140353290A1/en not_active Abandoned
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