JP2011514637A - コーティングされた先端部を有するガス電界電離イオン源 - Google Patents

コーティングされた先端部を有するガス電界電離イオン源 Download PDF

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Publication number
JP2011514637A
JP2011514637A JP2010549699A JP2010549699A JP2011514637A JP 2011514637 A JP2011514637 A JP 2011514637A JP 2010549699 A JP2010549699 A JP 2010549699A JP 2010549699 A JP2010549699 A JP 2010549699A JP 2011514637 A JP2011514637 A JP 2011514637A
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JP
Japan
Prior art keywords
tip
conductive material
coating
supported
ion source
Prior art date
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Pending
Application number
JP2010549699A
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English (en)
Japanese (ja)
Other versions
JP2011514637A5 (enExample
Inventor
ヴィ ノッテ フォース ジョン
Original Assignee
カール ツァイス エヌティーエス エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール ツァイス エヌティーエス エルエルシー filed Critical カール ツァイス エヌティーエス エルエルシー
Publication of JP2011514637A publication Critical patent/JP2011514637A/ja
Publication of JP2011514637A5 publication Critical patent/JP2011514637A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/16—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission
    • H01J49/168—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission field ionisation, e.g. corona discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/065—Construction of guns or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2010549699A 2008-03-03 2009-02-13 コーティングされた先端部を有するガス電界電離イオン源 Pending JP2011514637A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3320808P 2008-03-03 2008-03-03
PCT/US2009/034000 WO2009111149A1 (en) 2008-03-03 2009-02-13 Gas field ion source with coated tip

Publications (2)

Publication Number Publication Date
JP2011514637A true JP2011514637A (ja) 2011-05-06
JP2011514637A5 JP2011514637A5 (enExample) 2012-03-22

Family

ID=40679392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010549699A Pending JP2011514637A (ja) 2008-03-03 2009-02-13 コーティングされた先端部を有するガス電界電離イオン源

Country Status (5)

Country Link
US (1) US8314403B2 (enExample)
EP (1) EP2263248B1 (enExample)
JP (1) JP2011514637A (enExample)
TW (1) TWI474362B (enExample)
WO (1) WO2009111149A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049654B4 (de) 2008-09-30 2024-08-01 Carl Zeiss Microscopy Gmbh Elektronenstrahlquelle, Elektronenstrahlsystem mit derselben, Verfahren zur Herstellung der Elektronenstrahlquelle sowie deren Verwendung
US8536773B2 (en) 2011-03-30 2013-09-17 Carl Zeiss Microscopy Gmbh Electron beam source and method of manufacturing the same
KR102220793B1 (ko) * 2013-06-21 2021-02-25 스미스 디텍션 몬트리올 인코포레이티드 코팅된 코로나 이온화 소스를 위한 방법 및 디바이스
JP6560871B2 (ja) * 2015-02-03 2019-08-14 株式会社日立ハイテクサイエンス 集束イオンビーム装置
DE102020112220B9 (de) * 2020-05-06 2022-05-25 Carl Zeiss Microscopy Gmbh Teilchenstrahlgerät zum Abtragen mindestens eines Materials von einer Materialeinheit und Anordnen des Materials an einem Objekt

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968142A (ja) * 1982-10-08 1984-04-18 Fujitsu Ltd 電界電離ガスイオン源用エミツタチツプ
JPS60133628A (ja) * 1983-12-21 1985-07-16 Fujitsu Ltd 電界電離型イオン源用チツプの製造方法
JPH02123638A (ja) * 1988-11-01 1990-05-11 Jeol Ltd 軽元素イオン源
JP2006134638A (ja) * 2004-11-04 2006-05-25 Univ Waseda 電子光学装置用電子ビーム源
WO2007067310A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1122085A (en) 1913-10-08 1914-12-22 J H Willoughby Compressor.
DE2333866A1 (de) 1973-07-03 1975-01-23 Max Planck Gesellschaft Felddesorptions-ionenquelle und verfahren zu ihrer herstellung
US4085330A (en) * 1976-07-08 1978-04-18 Burroughs Corporation Focused ion beam mask maker
JPS5878557U (ja) * 1981-11-24 1983-05-27 株式会社日立製作所 電界放出型イオン源
US4686414A (en) * 1984-11-20 1987-08-11 Hughes Aircraft Company Enhanced wetting of liquid metal alloy ion sources
JPH0746585B2 (ja) * 1985-05-24 1995-05-17 株式会社日立製作所 イオンビーム装置およびイオンビーム形成方法
JP4656790B2 (ja) * 1999-08-20 2011-03-23 エフ イー アイ カンパニ 寿命が延長されたショットキーエミッター
GB2374979A (en) * 2000-12-28 2002-10-30 Ims Ionen Mikrofab Syst A field ionisation source
GB2372146B (en) * 2001-02-09 2003-03-26 Leica Microsys Lithography Ltd Cathode
US7511279B2 (en) 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US20070228287A1 (en) 2006-03-20 2007-10-04 Alis Technology Corporation Systems and methods for a gas field ionization source
US7176610B2 (en) * 2004-02-10 2007-02-13 Toshiba Machine America, Inc. High brightness thermionic cathode
GB2424754A (en) * 2005-03-29 2006-10-04 Univ Basel A focused ion beam generator
US7939800B2 (en) * 2005-10-19 2011-05-10 ICT, Integrated Circuit Testing, Gesellschaft fur Halbleiterpruftechnik mbH Arrangement and method for compensating emitter tip vibrations
WO2007055154A1 (ja) * 2005-11-08 2007-05-18 Advantest Corporation 電子銃、電子ビーム露光装置及び露光方法
TWI309428B (en) * 2006-04-07 2009-05-01 Hon Hai Prec Ind Co Ltd Emission source having carbon nanotube
JP4778939B2 (ja) * 2007-08-31 2011-09-21 株式会社神戸製鋼所 イオン源の製造方法、及びこの方法によって製造されたイオン源

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968142A (ja) * 1982-10-08 1984-04-18 Fujitsu Ltd 電界電離ガスイオン源用エミツタチツプ
JPS60133628A (ja) * 1983-12-21 1985-07-16 Fujitsu Ltd 電界電離型イオン源用チツプの製造方法
JPH02123638A (ja) * 1988-11-01 1990-05-11 Jeol Ltd 軽元素イオン源
JP2006134638A (ja) * 2004-11-04 2006-05-25 Univ Waseda 電子光学装置用電子ビーム源
WO2007067310A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods

Also Published As

Publication number Publication date
TWI474362B (zh) 2015-02-21
TW200952020A (en) 2009-12-16
WO2009111149A1 (en) 2009-09-11
EP2263248A1 (en) 2010-12-22
US8314403B2 (en) 2012-11-20
US20110001058A1 (en) 2011-01-06
EP2263248B1 (en) 2016-05-04

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