JP2011514003A - 光起電力装置および光起電力装置の製造方法 - Google Patents
光起電力装置および光起電力装置の製造方法 Download PDFInfo
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Abstract
Description
光線追跡実験を行い、表面構造化加工を行わない、ほぼ平坦なアクティブ層について、反射損失をシミュレートした。
光線追跡実験を行い、従来技術で知られたV字溝で構造化されたアクティブ層について反射損失をシミュレートした。シミュレーションの設定は比較例1と同様であった。
光線追跡実験を行い、従来技術で知られた逆ピラミッド型に構造化した層の反射損失をシミュレートした。シミュレーションの設定は、比較例1と同様であった。
光線追跡実験を行い、本発明にかかる領域画定された繰り返しの幾何学的な構造体のアレイ形状を有するアクティブ層の反射損失をシミュレートした。
Claims (14)
- 領域画定された繰り返しの幾何学的な構造体のアレイの形状を有するアクティブ層を備える薄膜型の光起電力装置であって、
前記幾何学的な構造体は、底面と、少なくとも3つのn多角形の表面によって結びつけられている1つの頂上部とを有し、ただしnは4以上である、ことを特徴とする光起電力装置。 - それぞれの前記幾何学的な構造体の底面はm個の辺からなる多角形形状からなり、それぞれの前記幾何学的な構造体は少なくともm+1個の表面を有する、ことを特徴とする請求項1記載の光起電力装置。
- 前記アクティブ層は、互いに境界を接する隣接した複数の幾何学的な構造体を有することによって、領域画定された繰り返しの幾何学的な構造体を有する、ことを特徴とする請求項1または2記載の光起電力装置。
- 前記アクティブ層は、お互いに、同一の配向、異なる配向またはランダムの配向を有する、幾何学的なオプティカルレリーフ構造体のアレイを有する、ことを特徴とする請求項1乃至3のいずれか1項記載の光起電力装置。
- 前記アクティブ層はアモルファス材料を含有する、ことを特徴とする請求項1乃至4のいずれか1項記載の光起電力装置。
- 前記アクティブ層はアモルファスシリコンを含有する、請求項5に記載の光起電力装置。
- 前記光起電力装置は、前記アクティブ層の支持基板を備え、前記支持基板は、前記アクティブ層の主面に平行な2つの主面を有し、前記アクティブ層に隣接する前記面は前記アクティブ層の形状または逆形状を有する、ことを特徴とする請求項1乃至6のいずれか1項に記載の光起電力装置。
- 前記アクティブ層の支持基板は透明なカバープレートであり、前記透明なカバープレートは2つの主面、すなわち、受光面と前記アクティブ層に隣接する面とを有し、前記アクティブ層に隣接する面の形状は前記アクティブ層の形状の逆である、ことを特徴とする請求項7記載の光起電力装置。
- ルミネセンス色素が前記透明なカバープレートに含まれる、ことを特徴とする請求項8記載の光起電力装置。
- 前記受光面は、領域画定された繰り返しの幾何学的な構造体のアレイを有する、ことを特徴とする請求項8または9記載の光起電力装置。
- 前記受光面の幾何学的な構造体は、底面と、少なくとも3つのn多角形の表面によって結びつけられている1つの頂上部を有し、ただしnは4以上である、ことを特徴とする請求項10記載の光起電力装置。
- アクティブ層が、領域画定された繰り返しの幾何学的な構造体のアレイの形状を有する光起電力装置の製造方法であって、
前記アクティブ層の主面に平行な、2つの主面を有する支持基板を設けるステップと、
アクティブ層が設けられる前記主面を、前記アクティブ層の領域画定された繰り返しの幾何学的な構造体の形状またはその逆の形状に形作るステップと、
前記アクティブ層を前記支持基板の面上に設けるステップと、を備え、
前記幾何学的な構造体は底面と、少なくとも3つのn多角形の表面によって結びつけられている1つの頂上部とを有し、ただしnは4以上である、ことを特徴とする方法。 - 前記アクティブ層は、化学気相成長法または物理気相成長法により形成される、ことを特徴とする請求項12記載の光起電力装置の製造方法。
- 前記光起電層は透明なカバープレートを備え、前記透明なカバープレートは前記アクティブ層の支持基板である、ことを特徴とする請求項12記載の光起電力装置の製造方法。
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EP (1) | EP2263261A1 (ja) |
JP (1) | JP5222372B2 (ja) |
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CN101971355A (zh) | 2011-02-09 |
US20110005593A1 (en) | 2011-01-13 |
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EP2263261A1 (en) | 2010-12-22 |
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