JP2011507273A5 - - Google Patents

Download PDF

Info

Publication number
JP2011507273A5
JP2011507273A5 JP2010538014A JP2010538014A JP2011507273A5 JP 2011507273 A5 JP2011507273 A5 JP 2011507273A5 JP 2010538014 A JP2010538014 A JP 2010538014A JP 2010538014 A JP2010538014 A JP 2010538014A JP 2011507273 A5 JP2011507273 A5 JP 2011507273A5
Authority
JP
Japan
Prior art keywords
light
etch stop
photon energy
semiconductor structure
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010538014A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011507273A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/082778 external-priority patent/WO2009075973A2/en
Publication of JP2011507273A publication Critical patent/JP2011507273A/ja
Publication of JP2011507273A5 publication Critical patent/JP2011507273A5/ja
Pending legal-status Critical Current

Links

JP2010538014A 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法 Pending JP2011507273A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1260807P 2007-12-10 2007-12-10
PCT/US2008/082778 WO2009075973A2 (en) 2007-12-10 2008-11-07 Semiconductor light emitting device and method of making same

Publications (2)

Publication Number Publication Date
JP2011507273A JP2011507273A (ja) 2011-03-03
JP2011507273A5 true JP2011507273A5 (https=) 2011-12-22

Family

ID=40756058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538014A Pending JP2011507273A (ja) 2007-12-10 2008-11-07 半導体発光デバイス及びその作製方法

Country Status (6)

Country Link
US (1) US20110121319A1 (https=)
EP (1) EP2232590A4 (https=)
JP (1) JP2011507273A (https=)
KR (1) KR20100099254A (https=)
CN (1) CN101939855B (https=)
WO (1) WO2009075973A2 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010027580A2 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source having light blocking components
CN102197554A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 单色光源
JP2012502473A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 窒化ガリウムレーザダイオードによって光励起された、ヒートシンク上のｉｉ−ｖｉ多重量子井戸垂直共振器面発光レーザー
CN102318089A (zh) 2008-12-24 2012-01-11 3M创新有限公司 具有双面波长转换器的光产生装置
JP2012514335A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側の波長変換器及びそれを使用する光生成デバイスの作製方法
KR20120092673A (ko) * 2009-11-18 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ⅱ-ⅵ족 반도체를 위한 신규한 습식 에칭제 및 방법
EP2521189A3 (en) * 2011-04-29 2013-05-01 Institute of Nuclear Energy Research Atomic Energy Council Lift-off structure for substrate of a photoelectric device and the method thereof
US8975614B2 (en) 2011-08-23 2015-03-10 Micron Technology, Inc. Wavelength converters for solid state lighting devices, and associated systems and methods
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
KR20140111876A (ko) 2013-03-12 2014-09-22 삼성디스플레이 주식회사 표시 장치
CN103579503A (zh) * 2013-11-14 2014-02-12 吉林大学 一种利用光交联聚合物对有机电子器件进行薄膜封装的方法
CN105849915B (zh) * 2014-01-06 2019-04-02 亮锐控股有限公司 具有成形衬底的半导体发光器件和制造所述器件的方法
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
CN104810444B (zh) * 2015-03-04 2018-01-09 华灿光电(苏州）有限公司 发光二极管外延片及其制备方法、发光二极管芯片制备及衬底回收方法
US9847454B2 (en) * 2015-10-02 2017-12-19 Epistar Corporation Light-emitting device
CN109564930B (zh) * 2016-05-13 2023-08-15 原子能与替代能源委员会 用于生产包括多个氮化镓二极管的光电设备的方法
JP6760141B2 (ja) * 2017-03-07 2020-09-23 信越半導体株式会社 発光素子及びその製造方法
US20190123035A1 (en) * 2017-10-19 2019-04-25 Samsung Electronics Co., Ltd. Method of performing die-based heterogeneous integration and devices including integrated dies

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584428A (en) * 1984-09-12 1986-04-22 Hughes Aircraft Company Solar energy converter employing a fluorescent wavelength shifter
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
JPH02267529A (ja) * 1989-04-07 1990-11-01 Fuji Photo Film Co Ltd 光波長変換素子およびその製造方法
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
JP3215297B2 (ja) * 1995-07-18 2001-10-02 沖電気工業株式会社 半導体発光素子の製造方法
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
JP3768302B2 (ja) * 1996-09-13 2006-04-19 同和鉱業株式会社 化合物半導体素子の製造方法
JPH11154774A (ja) * 1997-08-05 1999-06-08 Canon Inc 面発光半導体デバイスの製造方法、この方法によって製造された面発光半導体デバイス及びこのデバイスを用いた表示装置
JP3334598B2 (ja) * 1998-03-25 2002-10-15 日本電気株式会社 ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜
JP2000012981A (ja) * 1998-06-19 2000-01-14 Canon Inc 面型半導体光デバイスおよびその作製方法
JP2002118327A (ja) * 2000-10-06 2002-04-19 Furukawa Electric Co Ltd:The 化合物半導体装置の製造方法
TW493286B (en) * 2001-02-06 2002-07-01 United Epitaxy Co Ltd Light-emitting diode and the manufacturing method thereof
US20050167684A1 (en) * 2004-01-21 2005-08-04 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based phosphor material
US20080231170A1 (en) * 2004-01-26 2008-09-25 Fukudome Masato Wavelength Converter, Light-Emitting Device, Method of Producing Wavelength Converter and Method of Producing Light-Emitting Device
US7208768B2 (en) * 2004-04-30 2007-04-24 Sharp Laboratories Of America, Inc. Electroluminescent device
WO2006046553A1 (ja) * 2004-10-28 2006-05-04 Matsushita Electric Industrial Co., Ltd. 表示装置及び表示装置の駆動方法
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
JP4837295B2 (ja) * 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置
DE102005047152A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips
JP2007157940A (ja) * 2005-12-02 2007-06-21 Nichia Chem Ind Ltd 発光装置および発光装置の製造方法
KR100730072B1 (ko) * 2005-12-06 2007-06-20 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법
JP2007250629A (ja) * 2006-03-14 2007-09-27 Toshiba Corp 発光装置及びその製造方法、並びに蛍光パターン形成物
CN101455123A (zh) * 2006-05-26 2009-06-10 富士胶片株式会社 表面发射型电致发光器件
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US8188494B2 (en) * 2006-06-28 2012-05-29 Hewlett-Packard Development Company, L.P. Utilizing nanowire for generating white light
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
US8578427B2 (en) * 2008-03-04 2013-11-05 The Directv Group, Inc. Method for swapping channel assignments in a broadcast system

Similar Documents

Publication Publication Date Title
JP2011507273A5 (https=)
WO2009075973A3 (en) Semiconductor light emitting device and method of making same
CN102124582B (zh) 半导体光转换构造
TWI784114B (zh) 微發光裝置及顯示器
CN102124583B (zh) 半导体光转换构造
JP2013518932A5 (https=)
US7812361B2 (en) Light emitting diode
JP2007036298A5 (https=)
EP1536487A4 (en) ELECTROLUMINESCENT ELEMENT, LIGHT EMITTING DEVICE AND SURFACE EMISSION LIGHTING DEVICE USING THE SAME
WO2009088410A3 (en) Light emitting devices with high efficiency phospor structures
TW200739959A (en) Semiconductor light emitting element and method of fabricating the same
JP2009540614A5 (https=)
WO2009020547A3 (en) Semiconductor light emitting diodes with applied wavelength materials and methods of forming the same
WO2010075177A3 (en) Method of making double-sided wavelength converter and light generating device using same
CN113345989B (zh) 一种面向紫外通讯的Micro紫外发光二极管芯片
CN102124577A (zh) 制造光提取器的方法
CN102124581B (zh) 光转换构造
CN109950374A (zh) 一种氮化物量子阱结构深紫外发光二极管
US8835963B2 (en) Light converting and emitting device with minimal edge recombination
KR20110048581A (ko) 높은 종횡비를 가지는 단색 광원
CN102969423A (zh) 银耦合增强GaN基发光二极管的器件结构及制备方法
US10483439B2 (en) Optoelectronic device with silicon slice cover arranged downstream of a conversion element
TW200705713A (en) Zinc oxide based compound semiconductor light emitting element
CN101515619A (zh) 基于蓝宝石衬底的AlGaN基多量子阱uv-LED器件及制作方法
CN101740673B (zh) 高亮度发光二极管结构及其制造方法