JP2011507008A - マルチカラーマスク - Google Patents

マルチカラーマスク Download PDF

Info

Publication number
JP2011507008A
JP2011507008A JP2010534942A JP2010534942A JP2011507008A JP 2011507008 A JP2011507008 A JP 2011507008A JP 2010534942 A JP2010534942 A JP 2010534942A JP 2010534942 A JP2010534942 A JP 2010534942A JP 2011507008 A JP2011507008 A JP 2011507008A
Authority
JP
Japan
Prior art keywords
layer
pattern
color
mask
patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010534942A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011507008A5 (enExample
Inventor
マリー アービング，リン
ハワード レビー，デイビッド
エドワード アービング，マーク
ラエ エリンガー，キャロライン
Original Assignee
イーストマン コダック カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2011507008A publication Critical patent/JP2011507008A/ja
Publication of JP2011507008A5 publication Critical patent/JP2011507008A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Filters (AREA)
JP2010534942A 2007-11-20 2008-11-10 マルチカラーマスク Pending JP2011507008A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/986,102 US8906490B2 (en) 2006-05-19 2007-11-20 Multicolor mask
PCT/US2008/012659 WO2009067153A1 (en) 2007-11-20 2008-11-10 Multicolor mask

Publications (2)

Publication Number Publication Date
JP2011507008A true JP2011507008A (ja) 2011-03-03
JP2011507008A5 JP2011507008A5 (enExample) 2012-01-05

Family

ID=40342654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010534942A Pending JP2011507008A (ja) 2007-11-20 2008-11-10 マルチカラーマスク

Country Status (4)

Country Link
US (1) US8906490B2 (enExample)
EP (1) EP2212744A1 (enExample)
JP (1) JP2011507008A (enExample)
WO (1) WO2009067153A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9023499B2 (en) 2010-03-12 2015-05-05 Autonetworks Technologies, Ltd. Battery module

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006037433B4 (de) 2006-08-09 2010-08-19 Ovd Kinegram Ag Verfahren zur Herstellung eines Mehrschichtkörpers sowie Mehrschichtkörper
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US8221964B2 (en) * 2007-11-20 2012-07-17 Eastman Kodak Company Integrated color mask

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4374911A (en) * 1978-04-28 1983-02-22 International Business Machines Corporation Photo method of making tri-level density photomask
JPS6079331A (ja) * 1983-10-07 1985-05-07 Citizen Watch Co Ltd カラ−液晶表示装置の製造方法
JPH03287103A (ja) * 1990-04-02 1991-12-17 Seiko Epson Corp カラーフィルターの形成法
JP2000164886A (ja) * 1998-11-19 2000-06-16 Samsung Electronics Co Ltd 薄膜トランジスタ―基板及びその製造方法
JP2002082630A (ja) * 2000-05-12 2002-03-22 Semiconductor Energy Lab Co Ltd 電気光学装置
JP2004206098A (ja) * 2002-12-13 2004-07-22 Dainippon Printing Co Ltd 色分割光透過構造物用調整光反応型配合物
US20070292998A1 (en) * 2006-06-20 2007-12-20 Au Optronics Corporation Thin film transistor array substrate and method for manufacturing the same
JP2011503670A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー ディスプレイ回路を製造するための多色マスク方法
JP2011503668A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー 集積化カラーマスク

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2595155B1 (fr) 1986-02-28 1988-04-29 Commissariat Energie Atomique Procede de realisation de filtres colores en bandes et d'electrodes en bandes auto-alignes pour une cellule d'affichage polychrome a film liquide et cellule correspondante
DE3751650T2 (de) * 1986-09-19 1996-05-09 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines Reliefstruktur ausgehärtetem Kunststoff auf einer transparenten, angefärbten Schicht
US5391507A (en) 1993-09-03 1995-02-21 General Electric Company Lift-off fabrication method for self-aligned thin film transistors
JPH112713A (ja) * 1997-06-11 1999-01-06 Fuji Photo Film Co Ltd カラー表示装置用カラーフイルター基板の製造方法
US6338988B1 (en) 1999-09-30 2002-01-15 International Business Machines Corporation Method for fabricating self-aligned thin-film transistors to define a drain and source in a single photolithographic step
GB9927287D0 (en) 1999-11-19 2000-01-12 Koninkl Philips Electronics Nv Top gate thin film transistor and method of producing the same
US7804552B2 (en) 2000-05-12 2010-09-28 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with light shielding portion comprising laminated colored layers, electrical equipment having the same, portable telephone having the same
US7056834B2 (en) 2004-02-10 2006-06-06 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices using imprint lithography
US7259106B2 (en) 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4374911A (en) * 1978-04-28 1983-02-22 International Business Machines Corporation Photo method of making tri-level density photomask
JPS6079331A (ja) * 1983-10-07 1985-05-07 Citizen Watch Co Ltd カラ−液晶表示装置の製造方法
JPH03287103A (ja) * 1990-04-02 1991-12-17 Seiko Epson Corp カラーフィルターの形成法
JP2000164886A (ja) * 1998-11-19 2000-06-16 Samsung Electronics Co Ltd 薄膜トランジスタ―基板及びその製造方法
JP2002082630A (ja) * 2000-05-12 2002-03-22 Semiconductor Energy Lab Co Ltd 電気光学装置
JP2004206098A (ja) * 2002-12-13 2004-07-22 Dainippon Printing Co Ltd 色分割光透過構造物用調整光反応型配合物
US20070292998A1 (en) * 2006-06-20 2007-12-20 Au Optronics Corporation Thin film transistor array substrate and method for manufacturing the same
JP2011503670A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー ディスプレイ回路を製造するための多色マスク方法
JP2011503668A (ja) * 2007-11-20 2011-01-27 イーストマン コダック カンパニー 集積化カラーマスク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9023499B2 (en) 2010-03-12 2015-05-05 Autonetworks Technologies, Ltd. Battery module

Also Published As

Publication number Publication date
EP2212744A1 (en) 2010-08-04
US8906490B2 (en) 2014-12-09
US20090130397A1 (en) 2009-05-21
WO2009067153A1 (en) 2009-05-28

Similar Documents

Publication Publication Date Title
US20080107878A1 (en) Colored mask for forming transparent structures
US8129098B2 (en) Colored mask combined with selective area deposition
EP2256554B1 (en) Display circuitry made by multicolored mask process
US8715894B2 (en) Integrated color mask
TWI493287B (zh) 顯示元件用感放射線性樹脂組成物、塗膜以及其形成方法
JP2012525000A (ja) 二重自己整合式金属酸化物薄膜トランジスタ
WO2009067148A1 (en) Photopatternable deposition inhibitor containing siloxane
US8173355B2 (en) Gradient colored mask
CN103869622A (zh) 用于液晶显示装置中的黑矩阵的感光组合物、具有该组合物的黑矩阵以及使用该组合物形成黑矩阵的方法
CN100592206C (zh) 用于形成图案的抗蚀剂及使用其形成图案的方法
CN108333869A (zh) 感光性组合物、硬化膜及其制造方法、以及显示元件、发光元件及光接收元件
US8906490B2 (en) Multicolor mask
US7179697B2 (en) Method of fabricating an electronic device
US7148090B2 (en) Method of fabricating a TFT device formed by printing
CN116031308B (zh) 一种氧化物tft及其保护层的制造方法
KR102793564B1 (ko) 감방사선성 수지 조성물을 사용한 전자 장치의 제조 방법, 감방사선성 수지 조성물, 절연막 및 절연막을 구비한 전자 장치
KR20080110377A (ko) 에치레지스트 조성물 및 이를 이용한 액정표시장치의패턴형성방법
JP2005274590A (ja) 感光性樹脂組成物及びレジストパターンの形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111110

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111110

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130827

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140218