JP2011505057A - 照明装置 - Google Patents
照明装置 Download PDFInfo
- Publication number
- JP2011505057A JP2011505057A JP2010535213A JP2010535213A JP2011505057A JP 2011505057 A JP2011505057 A JP 2011505057A JP 2010535213 A JP2010535213 A JP 2010535213A JP 2010535213 A JP2010535213 A JP 2010535213A JP 2011505057 A JP2011505057 A JP 2011505057A
- Authority
- JP
- Japan
- Prior art keywords
- lighting device
- chip
- filter element
- radiation
- incident angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 230000005855 radiation Effects 0.000 claims description 77
- 238000002310 reflectometry Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 238000005286 illumination Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Abstract
【選択図】図1
Description
Claims (15)
- 照明装置(1)であって、
− 反射性内面(4)によって画成されている少なくとも1つの凹部(5)を有するチップハウジング(2)と、
− 前記凹部(5)の中に配置されているチップ表面(9)を有する少なくとも1つの放射放出半導体チップ(3)と、
− 前記チップから隔てられている角度フィルタ要素(6)であって、前記チップハウジング(2)に組み込まれており、好ましい方向(V)における前記半導体チップ(3)の下流に配置されている、前記角度フィルタ要素(6)と、
を備えており、
前記反射性内面(4)が前記チップ表面(9)の少なくとも10倍の大きさである、
照明装置(1)。 - 前記反射性内面(4)が、前記チップ表面(9)の100倍の大きさである、請求項1に記載の照明装置(1)。
- 前記反射性内面(4)が、90%またはそれ以上、好ましくは95%またはそれ以上、特に好ましくは98%またはそれ以上の反射率を有する、請求項1または請求項2に記載の照明装置(1)。
- 前記半導体チップ(3)によって放出される前記放射が、前記角度フィルタ要素(6)に当たり、第2の入射角度範囲内よりも第1の入射角度範囲内において、より強く反射され、前記第1の入射角度範囲が、前記第2の入射角度範囲よりも小さい入射角度を有する、請求項1から請求項3のいずれかに記載の照明装置(1)。
- 前記半導体チップ(3)によって放出される前記放射が、前記角度フィルタ要素(6)に当たり、第1の入射角度範囲内よりも第2の入射角度範囲内において、より強く反射され、前記第1の入射角度範囲が、前記第2の入射角度範囲よりも小さい入射角度を有する、請求項1から請求項3のいずれかに記載の照明装置(1)。
- 前記照明装置(1)によって放出される前記放射の放射角度が、前記角度フィルタ要素(6)によって小さくなる、請求項1から請求項5のいずれかに記載の照明装置(1)。
- 前記反射性内面(4)が少なくとも1つの側面(8)を備えている、請求項1から請求項6のいずれかに記載の照明装置(1)。
- 前記側面(8)が凹状に湾曲している、請求項7に記載の照明装置(1)。
- 前記内面(4)が、平面状の底面(7)と、前記底面(7)に対して角度をなして延在している複数の平面状の側面(8)と、を備えている、請求項7に記載の照明装置(1)。
- 前記角度フィルタ要素(6)が、前記チップハウジング(2)のカバーを形成している、請求項1から請求項9のいずれかに記載の照明装置(1)。
- 前記角度フィルタ要素(6)が構造要素(6a)を備えており、前記構造要素(6a)が、円錐構造、角錐構造、角柱構造、または複合放物面を逆にしたような構造、である、請求項1から請求項10のいずれかに記載の照明装置(1)。
- 前記構造要素(6a)が、前記好ましい方向(V)に次第に細くなる形状である、請求項11に記載の照明装置(1)。
- 前記角度フィルタ要素(6)が誘電体フィルタである、請求項1から請求項10のいずれかに記載の照明装置(1)。
- 前記凹部(5)が、部分的に充填組成物(11)によって満たされている、請求項1から請求項13のいずれかに記載の照明装置(1)。
- 前記充填組成物(11)と前記角度フィルタ要素(6)との間に空気の隙間が存在する、請求項14に記載の照明装置(1)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007057671A DE102007057671A1 (de) | 2007-11-30 | 2007-11-30 | Beleuchtungsvorrichtung |
PCT/DE2008/001959 WO2009068007A1 (de) | 2007-11-30 | 2008-11-26 | Beleuchtungsvorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011505057A true JP2011505057A (ja) | 2011-02-17 |
JP2011505057A5 JP2011505057A5 (ja) | 2012-01-19 |
Family
ID=40512198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010535213A Pending JP2011505057A (ja) | 2007-11-30 | 2008-11-26 | 照明装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20110006324A1 (ja) |
EP (1) | EP2218115B1 (ja) |
JP (1) | JP2011505057A (ja) |
KR (1) | KR20100099238A (ja) |
CN (1) | CN101878542B (ja) |
DE (1) | DE102007057671A1 (ja) |
TW (1) | TWI398606B (ja) |
WO (1) | WO2009068007A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2480918B8 (en) * | 2009-09-21 | 2016-09-21 | Philips Lighting Holding B.V. | Light emitting device comprising a light guiding plate with reflective shielding with glare reduction |
DE102010032041A1 (de) * | 2010-07-23 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zur Herstellung von strahlungsemittierenden Bauelemnenten |
DE102010038396B4 (de) | 2010-07-26 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Leuchtvorrichung damit |
JP5674444B2 (ja) * | 2010-12-09 | 2015-02-25 | 株式会社モデュレックス | 照明器具 |
JP6025367B2 (ja) * | 2011-05-12 | 2016-11-16 | キヤノン株式会社 | 有機el素子 |
DE102013217709A1 (de) * | 2013-09-05 | 2015-03-05 | Carl Zeiss Microscopy Gmbh | Beleuchtungsvorrichtung und digitaler Profilprojektor |
DE102016101614A1 (de) | 2016-01-29 | 2017-08-03 | Osram Opto Semiconductors Gmbh | Leuchtvorrichtung |
CN108321274B (zh) * | 2018-04-08 | 2024-05-10 | 聚灿光电科技(宿迁)有限公司 | Led芯片及其制造方法 |
JP7563362B2 (ja) | 2021-11-10 | 2024-10-08 | 信越化学工業株式会社 | 光学素子用窓材、光学素子パッケージ用リッド、光学素子パッケージ及び光学装置 |
CN115025253B (zh) * | 2022-06-02 | 2023-10-20 | 星际光(上海)实业有限公司 | 紫外线灯和紫外线灯的滤片结构 |
Citations (2)
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JP2007163615A (ja) * | 2005-12-09 | 2007-06-28 | Sony Corp | 面発光装置、輝度均一化方法及び液晶表示装置 |
JP2007256874A (ja) * | 2006-03-27 | 2007-10-04 | Matsushita Electric Ind Co Ltd | 面状偏光光源装置及び液晶表示装置 |
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DE19654418A1 (de) * | 1996-12-24 | 1998-06-25 | Mannesmann Vdo Ag | Anzeigeeinheit |
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
US6490104B1 (en) * | 2000-09-15 | 2002-12-03 | Three-Five Systems, Inc. | Illumination system for a micro display |
US6686676B2 (en) * | 2001-04-30 | 2004-02-03 | General Electric Company | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
JP4504662B2 (ja) * | 2003-04-09 | 2010-07-14 | シチズン電子株式会社 | Ledランプ |
JP2005243973A (ja) * | 2004-02-26 | 2005-09-08 | Kyocera Corp | 発光装置および照明装置 |
US7553683B2 (en) * | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
JP2006049657A (ja) * | 2004-08-06 | 2006-02-16 | Citizen Electronics Co Ltd | Ledランプ |
TWI241038B (en) * | 2004-09-14 | 2005-10-01 | Ind Tech Res Inst | Light emitting diode structure and fabrication method thereof |
EP1797595B1 (en) * | 2004-09-30 | 2019-12-18 | Koninklijke Philips N.V. | Brightness enhancement of led using selective ray angular recycling |
DE102004056252A1 (de) * | 2004-10-29 | 2006-05-04 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung, Kfz-Scheinwerfer und Verfahren zur Herstellung einer Beleuchtungseinrichtung |
TWI239671B (en) * | 2004-12-30 | 2005-09-11 | Ind Tech Res Inst | LED applied with omnidirectional reflector |
KR100649641B1 (ko) * | 2005-05-31 | 2006-11-27 | 삼성전기주식회사 | Led 패키지 |
US20060285332A1 (en) * | 2005-06-15 | 2006-12-21 | Goon Wooi K | Compact LED package with reduced field angle |
US20070262714A1 (en) * | 2006-05-15 | 2007-11-15 | X-Rite, Incorporated | Illumination source including photoluminescent material and a filter, and an apparatus including same |
KR100770424B1 (ko) * | 2006-12-13 | 2007-10-26 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
US8889517B2 (en) * | 2012-04-02 | 2014-11-18 | Jds Uniphase Corporation | Broadband dielectric reflectors for LED with varying thickness |
-
2007
- 2007-11-30 DE DE102007057671A patent/DE102007057671A1/de not_active Withdrawn
-
2008
- 2008-11-26 EP EP08855324.3A patent/EP2218115B1/de not_active Not-in-force
- 2008-11-26 KR KR1020107014577A patent/KR20100099238A/ko not_active Application Discontinuation
- 2008-11-26 CN CN2008801183322A patent/CN101878542B/zh not_active Expired - Fee Related
- 2008-11-26 JP JP2010535213A patent/JP2011505057A/ja active Pending
- 2008-11-26 WO PCT/DE2008/001959 patent/WO2009068007A1/de active Application Filing
- 2008-11-26 US US12/744,465 patent/US20110006324A1/en not_active Abandoned
- 2008-11-28 TW TW097146114A patent/TWI398606B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007163615A (ja) * | 2005-12-09 | 2007-06-28 | Sony Corp | 面発光装置、輝度均一化方法及び液晶表示装置 |
JP2007256874A (ja) * | 2006-03-27 | 2007-10-04 | Matsushita Electric Ind Co Ltd | 面状偏光光源装置及び液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101878542B (zh) | 2012-09-26 |
US20110006324A1 (en) | 2011-01-13 |
WO2009068007A1 (de) | 2009-06-04 |
EP2218115B1 (de) | 2018-10-31 |
KR20100099238A (ko) | 2010-09-10 |
CN101878542A (zh) | 2010-11-03 |
TWI398606B (zh) | 2013-06-11 |
DE102007057671A1 (de) | 2009-06-04 |
TW200928224A (en) | 2009-07-01 |
EP2218115A1 (de) | 2010-08-18 |
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