JP2011249019A - 光電変換装置及びその製造方法 - Google Patents
光電変換装置及びその製造方法 Download PDFInfo
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- JP2011249019A JP2011249019A JP2010117900A JP2010117900A JP2011249019A JP 2011249019 A JP2011249019 A JP 2011249019A JP 2010117900 A JP2010117900 A JP 2010117900A JP 2010117900 A JP2010117900 A JP 2010117900A JP 2011249019 A JP2011249019 A JP 2011249019A
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- oxide semiconductor
- metal oxide
- semiconductor layer
- photoelectric conversion
- porous metal
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
【解決手段】光電変換装置は、透明電極2とこの面に形成され色素が担持される酸化物半導体層3とを有する作用電極と、対向電極5と、電解質層4とを有し、酸化物半導体層の表面の水酸基濃度が0.01個/(nm)2以上、4.0個/(nm)2以下であり、同表面の吸着水濃度が0.03個/(nm)2以上、4.0個/(nm)2以下である。光電変換装置の製造方法は、透明電極2の面に酸化物半導体層3を形成する第1工程と、酸化性雰囲気における低温プラズマ処理によって、酸化物半導体層の表面の水酸基濃度を0.01個/(nm)2以上、4.0個/(nm)2以下、同表面の吸着水濃度を0.03個/nm2以上、4.0個/(nm)2以下となるように制御する第2工程と、酸化物半導体層に色素を担持させる第3工程とを有する。
【選択図】図1
Description
<色素増感型光電変換装置>
図1は、本発明の実施の形態における色素増感型光電変換装置の構成を説明する図である。
図2は、本発明の実施の形態における色素増感型光電変換装置の製造方法を説明する図である。図2(A)は窓電極(作用電極)を形成する工程を説明する図、図2(B)は対向電極を形成する工程を説明する図、図2(C)は対向させた窓電極(作用電極)と対向電極との間に電解質層を形成し封止する工程を説明する図、図2(D)は色素増感型光電変換装置の構成を説明する図である。
多孔質金属酸化物半導体層3の温度を上昇させることによって、弱い結合状態にある分子種から強い結合状態にある分子種の順に、導体層3の表面から分子種を脱離させていくことができる。この分子種(フラグメント)を質量分析計(MS、Mass spectrometer)によって分析することができ、所望の脱離分子種のイオン強度を温度上昇の変化として検出したスペクトル(以下、昇温脱離スペクトルと言う。)として得ることができる。このような分析方法は、昇温脱離法(TPD、Temperature programmed Desorption)或いは昇温脱離ガス分析法(TDS、Thermal Desorption Spectroscopy)と呼ばれている。
[実施例1]
[実施例2]
[実施例3]
[実施例4]
[実施例5]
[実施例6]
[実施例7]
[実施例8]
[実施例9]
[実施例10]
[実施例11]
[実施例12]
[実施例13]
[実施例14]
[実施例15]
[実施例16]
比較例1における多孔質金属酸化物半導体層は、実施例1において、バレル型プラズマ処理装置を用いて酸化処理を行う前の状態の多孔質金属酸化物半導体層と同じものである。即ち、ビーズ分散機を用いて、酸化チタン(日本アエロジル社製P25)5gを溶媒(エタノール45g)中に分散させ分散溶液を調製し、この分散液を透明電極2の面に塗布法によって塗布し、その後、オーブン中で150℃、1時間焼成して、多孔質金属酸化物半導体層を形成した。
図3は、本発明の実施例における色素増感型太陽電池に使用した二酸化チタン層の形成条件、二酸化チタン層における水酸基及び吸着水の濃度と光電変換効率の関係を説明する図である。図3に示す形成条件は上述した各実施例で説明した二酸化チタン電極層の形成方法の概要のみを示している。
4…電解質層、5…対向電極、5a…白金層、5b…透明導電層、6…対向基板、
10…色素増感型光電変換装置、11…二酸化チタン層、13…ブリッジ水酸基、
15…ターミナル水酸基、17…水素結合、19…物理吸着による水分子の層
Claims (19)
- 色素が担持される多孔質金属酸化物半導体層が形成された作用電極を有し、前記多孔質金属酸化物半導体層の表面の水酸基濃度が0.01個/(nm)2以上、4.0個/(nm)2以下である、光電変換装置。
- 前記水酸基濃度が0.01個/(nm)2以上、3.0個/(nm)2以下である、請求項1に記載の光電変換装置。
- 前記水酸基濃度が0.02個/(nm)2以上、2.0個/(nm)2以下である、請求項1に記載の光電変換装置。
- 前記水酸基濃度が0.05個/(nm)2以上、0.9個/(nm)2以下である、請求項1に記載の光電変換装置。
- 前記多孔質金属酸化物半導体層の表面の吸着水濃度が0.03個/(nm)2以上、4.0個/(nm)2以下である、請求項1に記載の光電変換装置。
- 前記吸着水濃度が0.03個/(nm)2以上、3.5個/(nm)2以下である、請求項1に記載の光電変換装置。
- 前記吸着水濃度が0.07個/(nm)2以上、2.5個/(nm)2以下である、請求項1に記載の光電変換装置。
- 前記吸着水濃度が0.2個/(nm)2以上、2.0個/(nm)2以下である、請求項1に記載の光電変換装置。
- 作用電極の面に多孔質金属酸化物半導体層を形成する第1工程と、
前記多孔質金属酸化物半導体層の表面の水酸基濃度を0.01個/(nm)2以上、 4.0個/(nm)2以下となるように制御する第2工程と、
前記多孔質金属酸化物半導体層に色素を担持させる第3工程と
を有する、光電変換装置の製造方法。 - 前記水酸基濃度を0.01個/(nm)2以上、3.0個/(nm)2以下となるように制御する、請求項9に記載の光電変換装置の製造方法。
- 前記水酸基濃度が0.02個/(nm)2以上、2.0個/(nm)2以下となるように制御する、請求項9に記載の光電変換装置の製造方法。
- 前記水酸基濃度を0.05個/(nm)2以上、0.9個/(nm)2以下となるように制御する、請求項9に記載の光電変換装置の製造方法。
- 前記第2工程において、前記多孔質金属酸化物半導体層の表面の吸着水濃度を0.05個/(nm)2以上、4.0個/(nm)2以下となるように制御する、請求項9に記載の光電変換装置の製造方法。
- 前記吸着水濃度を0.03個/(nm)2以上、3.5個/(nm)2以下となるように制御する、請求項9に記載の光電変換装置の製造方法。
- 前記吸着水濃度を0.07個/(nm)2以上、2.5個/(nm)2以下となるように制御する、請求項9に記載の光電変換装置の製造方法。
- 前記吸着水濃度を0.2個/(nm)2以上、2.0個/(nm)2以下となるように制御する、請求項9に記載の光電変換装置の製造方法。
- 前記第2工程において、前記多孔質金属酸化物半導体層の表面を、プラズマ処理、紫外線照射処理、加熱処理の少なくとも1つを行うことによって、前記水酸基濃度を制御する、請求項9に記載の光電変換装置の製造方法。
- 前記プラズマ処理を酸化性雰囲気中で行う、請求項17に記載の光電変換装置の製造方法。
- 前記プラズマ処理を、平行平板型プラズマ、バレル型プラズマ、マイクロ波型プラズマ、ECR型プラズマ、ヘリコン波プラズマ、ホローカソード放電プラズマ、表面波プラズマ、アークジェットプラズマの何れかを使用して行う、請求項17に記載の光電変換装置の製造方法。
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