JP2011240374A - Brazing method for insulation laminated material - Google Patents
Brazing method for insulation laminated material Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Abstract
Description
この発明は絶縁積層材のろう付方法に関し、さらに詳しくは、絶縁板および絶縁板の少なくとも片面に設けられた金属層よりなる絶縁積層材を金属部材にろう付する方法に関する。 The present invention relates to a method for brazing an insulating laminated material, and more particularly to a method for brazing an insulating laminated material comprising a metal layer provided on at least one surface of an insulating plate and an insulating plate to a metal member.
この明細書において、「アルミニウム」という用語には、「純アルミニウム」と表現する場合を除いて、純アルミニウムの他にアルミニウム合金を含むものとする。 In this specification, the term “aluminum” includes aluminum alloys in addition to pure aluminum, except when expressed as “pure aluminum”.
たとえばIGBT（Insulated Gate Bipolar Transistor）などの半導体素子からなるパワーデバイスを備えたパワーモジュールにおいては、半導体素子から発せられる熱を効率良く放熱して、半導体素子の温度を所定温度以下に保つ必要がある。そこで、従来、パワーデバイスを実装するパワーモジュール用ベースとして、セラミックス製絶縁板、絶縁板の一面に形成されたアルミニウム製配線層（金属層）、および絶縁板の他面に形成されたアルミニウム製伝熱層（金属層）からなる絶縁回路基板（絶縁積層材）と、絶縁回路基板の伝熱層がろう付されたアルミニウム製放熱部材と、放熱部材における絶縁回路基板にろう付された側と反対側の面にろう付されかつ内部に冷却液流路が形成されたアルミニウム製ヒートシンクとからなるものが提案されている（特許文献１参照）。 For example, in a power module equipped with a power device composed of a semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor), it is necessary to efficiently dissipate heat generated from the semiconductor element to keep the temperature of the semiconductor element below a predetermined temperature. . Therefore, conventionally, as a power module base for mounting a power device, a ceramic insulating plate, an aluminum wiring layer (metal layer) formed on one surface of the insulating plate, and an aluminum transmission formed on the other surface of the insulating plate. Insulated circuit board (insulating laminate) consisting of a heat layer (metal layer), an aluminum heat dissipating member brazed to the heat transfer layer of the insulating circuit board, and the opposite side of the heat dissipating member brazed to the insulating circuit board There has been proposed an aluminum heat sink that is brazed to the side surface and has a coolant flow path formed therein (see Patent Document 1).
特許文献１記載のパワーモジュール用ベースにおいては、絶縁回路基板の配線層上にパワーデバイスが実装されてパワーモジュールとして用いられる。そして、パワーデバイスから発せられた熱は、配線層、絶縁板、伝熱層および放熱部材を経てヒートシンクに伝えられ、冷却液流路内を流れる冷却液に放熱されるようになっている。
In the power module base described in
ところで、特許文献１記載のパワーモジュール用ベースにおいては、絶縁回路基板の伝熱層と放熱部材とのろう付は、真空雰囲気中で行われている（特許文献１の段落００２３参照）。しかしながら、真空雰囲気中で行う真空ろう付は、コストが高くなるという問題がある。
By the way, in the base for power modules described in
そこで、フラックスを使用する一般的な炉中ろう付法により、絶縁回路基板の伝熱層と放熱部材とのろう付を行うことが考えられる。この方法では、フラックスを放熱部材に塗布しておくことが一般的である。しかしながら、フラックスを使用する炉中ろう付法により、絶縁回路基板の伝熱層と放熱部材とのろう付を行う場合、溶融したフラックスが絶縁回路基板の伝熱層の周面に沿って絶縁板側に流れて絶縁板と伝熱層との界面の周縁に至り、その結果溶融フラックスが絶縁板と伝熱層との界面に悪影響を及ぼして、絶縁板と伝熱層とが剥離するという問題がある。 Therefore, it is conceivable to braze the heat transfer layer of the insulated circuit board and the heat radiating member by a general in-furnace brazing method using flux. In this method, it is common to apply flux to the heat radiating member. However, when brazing the heat transfer layer of the insulated circuit board and the heat radiating member by brazing in the furnace using the flux, the molten flux is insulated along the peripheral surface of the heat transfer layer of the insulated circuit board. To the periphery of the interface between the insulating plate and the heat transfer layer, and as a result, the melt flux adversely affects the interface between the insulating plate and the heat transfer layer, causing the insulating plate and the heat transfer layer to peel off. There is.
この発明の目的は、上記問題を解決し、絶縁板と金属層との剥離を防止しうるとともにコストの安い絶縁積層材のろう付方法を提供することにある。 An object of the present invention is to provide a brazing method for an insulating laminated material that solves the above-described problems and can prevent the insulating plate and the metal layer from being peeled and is inexpensive.
本発明は、上記目的を達成するために以下の態様からなる。 In order to achieve the above object, the present invention comprises the following aspects.
1)絶縁板および絶縁板の少なくとも片面に設けられた金属層よりなる絶縁積層材の金属層を金属部材にろう付する方法であって、
金属部材にろう付される絶縁積層材の金属層の周囲に、溶融したフラックスと反応して溶融フラックスの流れを止めるフラックス流動防止物を存在させておき、フラックスを使用して炉中でろう付することを特徴とする絶縁積層材のろう付方法。
1) A method of brazing a metal layer of an insulating laminate consisting of an insulating plate and a metal layer provided on at least one side of the insulating plate to a metal member,
Around the metal layer of the insulation laminate to be brazed to the metal member, there is a flux flow preventer that stops the flow of the molten flux by reacting with the molten flux, and brazing in the furnace using the flux. A method for brazing an insulating laminated material.
2)絶縁積層材の金属層をＡｌ−Ｍｇ合金で形成しておき、当該金属層の周面の表層部をフラックス侵入防止物として機能させる上記1)記載の絶縁積層材のろう付方法。 2) The method for brazing an insulating laminated material according to 1) above, wherein the metal layer of the insulating laminated material is formed of an Al—Mg alloy, and the surface layer portion on the peripheral surface of the metal layer functions as a flux intrusion preventive.
3)絶縁積層材の金属層を形成するＡｌ−Ｍｇ合金が、Ｍｇ０．００５〜０．２質量％を含み、残部Ａｌおよび不可避不純物からなる上記2)記載の絶縁積層材のろう付方法。 3) The method for brazing an insulating laminate according to 2) above, wherein the Al—Mg alloy forming the metal layer of the insulating laminate contains 0.005 to 0.2% by mass of Mg, and the balance is Al and inevitable impurities.
4)絶縁積層材の金属層の周面に沿って、金属層とは別個に形成されたＡｌ−Ｍｇ合金からなるフラックス流動防止物、金属層とは別個に形成されたＭｇ合金からなるフラックス流動防止物、および金属層とは別個に形成されたＭｇ化合物からなるフラックス流動防止物のうちの少なくとも１つを存在させておく上記1)記載の絶縁積層材の製造方法。 4) Flux flow prevention material made of Al-Mg alloy formed separately from the metal layer along the peripheral surface of the metal layer of the insulating laminate, and flux flow made of Mg alloy formed separately from the metal layer The method for producing an insulating laminated material according to 1), wherein at least one of the preventive and the flux flow preventive made of Mg compound formed separately from the metal layer is present.
5)フラックス流動防止物が箔または線材であり、当該箔または線材を金属層の周囲に配置しておく上記4)記載の絶縁積層材の製造方法。 5) The method for producing an insulating laminate according to 4) above, wherein the flux flow prevention material is a foil or a wire, and the foil or wire is disposed around the metal layer.
6)フラックス流動防止物が粒子状であり、当該粒子状フラックス流動防止物とバインダとの混合物を金属層の周面に塗布しておく上記4)記載の絶縁積層材の製造方法。 6) The method for producing an insulating laminate according to 4) above, wherein the flux flow preventive is in the form of particles, and a mixture of the particulate flux flow preventive and the binder is applied to the peripheral surface of the metal layer.
7)Ａｌ−Ｍｇ合金が、Ｍｇ０．００５〜０．２質量％を含み、残部Ａｌおよび不可避不純物からなる上記4)〜6)のうちのいずれかに記載の絶縁積層材のろう付方法。 7) The method for brazing an insulating laminate according to any one of 4) to 6) above, wherein the Al—Mg alloy contains 0.005 to 0.2% by mass of Mg, and the balance is Al and inevitable impurities.
8)Ｍｇ合金が、Ｍｇを９０質量％以上含む上記4)〜6)のうちのいずれかに記載の絶縁積層材のろう付方法。 8) The brazing method for an insulating laminated material according to any one of 4) to 6) above, wherein the Mg alloy contains 90% by mass or more of Mg.
9)Ｍｇ化合物が、ＦおよびＫのうちの少なくとも１つを含む上記4)〜6)のうちのいずれかに記載の絶縁積層材のろう付方法。 9) The method for brazing an insulating laminate according to any one of 4) to 6) above, wherein the Mg compound contains at least one of F and K.
10)絶縁積層材の絶縁板の周縁部が、金属部材にろう付される金属層よりも外方に張り出しており、絶縁板における当該外方張り出し部における金属部材側を向いた面に沿ってフラックス流動防止物を配置しておく上記1)〜9)のうちのいずれかに記載の絶縁積層材のろう付方法。 10) The peripheral edge of the insulating plate of the insulating laminated material protrudes outward from the metal layer brazed to the metal member, and along the surface facing the metal member side in the outward protruding portion of the insulating plate. The method for brazing an insulating laminated material according to any one of 1) to 9) above, wherein a flux flow preventive is disposed.
11)絶縁積層材の両面に金属層が設けられており、金属部材にろう付される金属層とは反対側の金属層の周囲に、溶融したフラックスと反応して溶融フラックスの流れを止めるフラックス流動防止物を存在させておく上記1)〜10)のうちのいずれかに記載の絶縁積層材のろう付方法。 11) Flux that has metal layers on both sides of the insulating laminate and stops the flow of molten flux around the metal layer opposite to the metal layer to be brazed to the metal member by reacting with the molten flux The method for brazing an insulating laminated material according to any one of 1) to 10) above, wherein a flow preventive is present.
12)フラックスとしてＫＡｌＦ４を用いる上記1)〜11)のうちのいずれかに記載の絶縁積層材のろう付方法。 12) The method for brazing an insulating laminate according to any one of 1) to 11) above, wherein KAlF 4 is used as a flux.
13)絶縁板および絶縁板の両面に金属層が設けられた絶縁積層材と、絶縁積層材の一方の金属層がろう付されたヒートシンクとを備えた放熱装置であって、
絶縁積層材の一方の金属層とヒートシンクとが、上記1)〜12)のうちのいずれかに記載の方法によりろう付されており、ヒートシンクにろう付された金属層の周面に、フラックスとフラックス侵入防止物との反応物が残存している放熱装置。
13) A heat dissipating device comprising an insulating plate and an insulating laminate having a metal layer provided on both surfaces of the insulating plate, and a heat sink in which one metal layer of the insulating laminate is brazed.
One metal layer of the insulating laminate and the heat sink are brazed by the method described in any one of 1) to 12) above, and the flux and the peripheral surface of the metal layer brazed to the heat sink A heat dissipation device in which a reaction product with the flux intrusion prevention material remains.
14)絶縁板および絶縁板の両面に金属層が設けられた絶縁積層材と、絶縁積層材の一方の金属層がろう付された応力緩和部材と、応力緩和部材における絶縁積層材の一方の金属層とろう付された面とは反対側の面がろう付されたヒートシンクとを備えた放熱装置であって、
絶縁積層材の一方の金属層と応力緩和部材とが、上記1)〜12)のうちのいずれかに記載の方法によりろう付されており、応力緩和部材にろう付された金属層の周面に、フラックスとフラックス侵入防止物との反応物が残存している放熱装置。
14) Insulating plate and insulating laminate having metal layers provided on both sides of the insulating plate, a stress relaxation member brazed with one metal layer of the insulating laminate, and one metal of the insulating laminate in the stress relaxation member A heat dissipating device comprising a layer and a heat sink brazed on the surface opposite to the brazed surface,
One metal layer of the insulating laminate and the stress relaxation member are brazed by the method described in any one of 1) to 12) above, and the peripheral surface of the metal layer brazed to the stress relaxation member In addition, a heat dissipation device in which a reaction product between the flux and the flux intrusion prevention material remains.
15)フラックスとフラックス侵入防止物との反応物が、ＫＭｇＦ３、ＭｇＦ２、Ｋ２ＭｇＦ４およびＡｌＦ３の少なくとも１つからなる上記13)または14)記載の放熱装置。 15) The heat radiating device according to 13) or 14) above, wherein a reaction product of the flux and the flux intrusion prevention material is at least one of KMgF 3 , MgF 2 , K 2 MgF 4 and AlF 3 .
上記1)〜12)の絶縁積層材のろう付方法によれば、溶融したフラックスと反応して溶融フラックスの流れを止めるフラックス流動防止物を、金属部材にろう付される金属層の周囲に存在させておくので、フラックス流動防止物が溶融フラックスと反応することにより、溶融フラックスの流れを止められ、溶融フラックスが金属層の周面に沿って絶縁板と金属層の界面まで流れることが防止される。したがって、溶融フラックスが絶縁板と伝熱層との界面に悪影響を及ぼすことがなくなり、絶縁積層材の絶縁板と金属層との剥離が防止される。 According to the brazing method for insulating laminates of the above 1) to 12), a flux flow preventer that reacts with the melted flux to stop the flow of the melted flux is present around the metal layer to be brazed to the metal member. Therefore, the flux flow preventive substance reacts with the molten flux to stop the flow of the molten flux, and the molten flux is prevented from flowing to the interface between the insulating plate and the metal layer along the peripheral surface of the metal layer. The Therefore, the melt flux does not adversely affect the interface between the insulating plate and the heat transfer layer, and peeling of the insulating laminate from the insulating plate and the metal layer is prevented.
上記2)および3)の絶縁積層材のろう付方法によれば、絶縁積層材の金属層と別個にフラックス流動防止物を形成する必要がない。 According to the brazing method of the insulating laminate of the above 2) and 3), it is not necessary to form a flux flow preventer separately from the metal layer of the insulating laminate.
以下、この発明の実施形態を、図面を参照して説明する。この実施形態は、この発明によるろう付方法を、パワーモジュール用ベースにおける絶縁積層材としての絶縁回路基板と、応力緩和部材とのろう付に適用したものである。なお、以下の説明において、図１の上下を上下というものとする。 Embodiments of the present invention will be described below with reference to the drawings. In this embodiment, the brazing method according to the present invention is applied to brazing between an insulating circuit board as an insulating laminate in a power module base and a stress relaxation member. In the following description, the top and bottom in FIG.
図１はパワーモジュールの全体構成を示し、図２は応力緩和部材を示す。 FIG. 1 shows the overall configuration of the power module, and FIG. 2 shows a stress relaxation member.
図１において、パワーモジュール(1)は、パワーモジュール用ベース(2)と、パワーモジュール用ベース(2)に実装されたパワーデバイス(3)とよりなる。 In FIG. 1, the power module (1) includes a power module base (2) and a power device (3) mounted on the power module base (2).
パワーモジュール用ベース(2)は、方形のセラミックス製絶縁板(5)、絶縁板(5)の上面に形成された方形のアルミニウム製配線層(6)、および絶縁板(5)の下面に形成された方形のアルミニウム製伝熱層(7)（金属層）からなる絶縁回路基板(4)（絶縁積層材）と、絶縁回路基板(4)の伝熱層(7)がろう付されたアルミニウム製応力緩和部材(8)と、応力緩和部材(8)における絶縁回路基板(4)にろう付された側と反対側の面にろう付されたアルミニウム製ヒートシンク(9)とからなる。 The power module base (2) is formed on a rectangular ceramic insulating plate (5), a rectangular aluminum wiring layer (6) formed on the upper surface of the insulating plate (5), and a lower surface of the insulating plate (5). Insulated circuit board (4) (insulating laminate) consisting of a rectangular aluminum heat transfer layer (7) (metal layer) and aluminum with the heat transfer layer (7) of the insulated circuit board (4) brazed It comprises a stress-reducing member (8) and an aluminum heat sink (9) brazed to the opposite side of the stress-relieving member (8) from the side brazed to the insulated circuit board (4).
絶縁回路基板(4)の絶縁板(5)は、必要とされる絶縁特性、熱伝導率および機械的強度を満たしていれば、どのようなセラミックから形成されていてもよいが、たとえばＡｌＮ、Ａｌ２Ｏ３、Ｓｉ３Ｎ４などにより形成される。配線層(6)は、導電性に優れたアルミニウム、銅などの金属により形成されるが、電気伝導率が高く、変形能が高く、しかも半導体素子とのはんだ付け性に優れた純度の高い純アルミニウムにより形成されていることが好ましい。伝熱層(7)は、熱伝導性に優れたアルミニウム、ここではＭｇ０．００５〜０．２質量％を含み、残部Ａｌおよび不可避不純物からなるＡｌ−Ｍｇ合金により形成されている。配線層(6)および伝熱層(7)の大きさは同一であるとともに、絶縁板(5)よりも小さくなっており、絶縁板(5)の周縁寄りの部分は配線層(6)および伝熱層(7)の周縁から外側に張り出している。張り出し部を(5a)で示す。 The insulating plate (5) of the insulating circuit board (4) may be formed of any ceramic as long as it satisfies the required insulating properties, thermal conductivity and mechanical strength. For example, AlN, It is formed of Al 2 O 3 , Si 3 N 4 or the like. The wiring layer (6) is made of a metal such as aluminum or copper having excellent conductivity, but it has high electrical conductivity, high deformability, and excellent solderability with semiconductor elements. It is preferable that it is formed of aluminum. The heat transfer layer (7) is formed of an Al—Mg alloy containing aluminum having excellent thermal conductivity, here 0.005 to 0.2% by mass of Mg, and the balance being Al and inevitable impurities. The wiring layer (6) and the heat transfer layer (7) have the same size and are smaller than the insulating plate (5), and the portion near the periphery of the insulating plate (5) is the wiring layer (6) and Projecting outward from the periphery of the heat transfer layer (7). The overhang is indicated by (5a).
応力緩和部材(8)は、図２に示すように、両面にろう材層を有するアルミニウムブレージングシートからなり、複数の円形貫通穴(11)が千鳥配置状に形成されている。 As shown in FIG. 2, the stress relaxation member (8) is made of an aluminum brazing sheet having a brazing filler metal layer on both sides, and a plurality of circular through holes (11) are formed in a staggered arrangement.
ヒートシンク(9)は、複数の冷却流体通路(12)が並列状に設けられた扁平中空状であり、熱伝導性に優れるとともに、軽量であるアルミニウムにより形成されていることが好ましい。冷却流体としては、液体および気体のいずれを用いてもよい。 The heat sink (9) is preferably a flat hollow shape in which a plurality of cooling fluid passages (12) are provided in parallel, is excellent in thermal conductivity, and is preferably formed of lightweight aluminum. Either a liquid or a gas may be used as the cooling fluid.
パワーデバイス(3)は、絶縁回路基板(4)の配線層(6)上にはんだ付けされており、これによりパワーモジュール用ベース(2)に実装されている。パワーデバイス(3)から発せられる熱は、配線層(6)、絶縁板(5)、伝熱層(7)および応力緩和部材(8)を経てヒートシンク(9)に伝えられ、冷却流体通路(12)内を流れる冷却流体に放熱されるようになっている。 The power device (3) is soldered onto the wiring layer (6) of the insulating circuit board (4), and is thereby mounted on the power module base (2). Heat generated from the power device (3) is transferred to the heat sink (9) through the wiring layer (6), the insulating plate (5), the heat transfer layer (7) and the stress relaxation member (8), and the cooling fluid passage ( 12) Heat is dissipated to the cooling fluid flowing in the interior.
パワーモジュール用ベース(2)は、絶縁回路基板(4)と応力緩和部材(8)とヒートシンク(9)とを一括してろう付することによりつくられる。 The power module base (2) is produced by brazing together the insulating circuit board (4), the stress relaxation member (8), and the heat sink (9).
絶縁回路基板(4)と応力緩和部材(8)とヒートシンク(9)とのろう付方法は、次の通りである。 The method of brazing the insulating circuit board (4), the stress relaxation member (8), and the heat sink (9) is as follows.
まず、絶縁板(5)の一面に配線層(6)が形成されるとともに、他面に伝熱層(7)が形成された絶縁回路基板(4)と、応力緩和部材(8)と、ヒートシンク(9)とを用意する。ここで、Ｍｇ０．００５〜０．２質量％を含み、残部Ａｌおよび不可避不純物からなるＡｌ−Ｍｇ合金により形成されている伝熱層(7)の周面(7a)の表層部が、溶融したフラックスと反応して溶融フラックスの流れを止めるフラックス流動防止物となっている。伝熱層(7)を形成するＡｌ−Ｍｇ合金において、Ｍｇ含有量を０．００５〜０．２質量％としたのは、Ｍｇ含有量が少ないとフラックスとの反応による溶融フラックスの流れを止める効果が十分ではなく、多すぎると応力緩和部材(8)とのろう付性が低下するとともに、熱伝導性が低下するおそれがあるからである。Ｍｇ含有量は０．０１〜０．１５質量％であることが好ましい。 First, an insulating circuit board (4) in which a wiring layer (6) is formed on one surface of an insulating plate (5) and a heat transfer layer (7) is formed on the other surface, a stress relaxation member (8), Prepare a heat sink (9). Here, the surface layer portion of the peripheral surface (7a) of the heat transfer layer (7) formed of an Al-Mg alloy including Mg 0.005 to 0.2 mass% and including the balance Al and inevitable impurities was melted. It is a flux flow prevention material that reacts with the flux to stop the flow of the molten flux. In the Al-Mg alloy forming the heat transfer layer (7), the Mg content is set to 0.005 to 0.2% by mass. When the Mg content is low, the flow of the molten flux due to the reaction with the flux is stopped. This is because the effect is not sufficient, and if too much, the brazing property with the stress relaxation member (8) is lowered and the thermal conductivity may be lowered. The Mg content is preferably 0.01 to 0.15% by mass.
ついで、ヒートシンク(9)上に応力緩和部材(8)を配置するとともに、応力緩和部材(8)にフッ化物系のフラックス、たとえばＫＡｌＦ４の懸濁液を塗布した後、応力緩和部材(8)上に絶縁回路基板(4)を配置する。 Next, the stress relaxation member (8) is disposed on the heat sink (9), and after applying a fluoride-based flux, for example, a suspension of KAlF 4 to the stress relaxation member (8), the stress relaxation member (8). An insulated circuit board (4) is placed on top.
その後、ヒートシンク(9)、応力緩和部材(8)および絶縁回路基板(4)を適当な手段で仮止めし、不活性ガス雰囲気、たとえば窒素ガス雰囲気とされた炉中において、適当な温度に適当な時間加熱し、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(7)をろう付する。こうして、パワーモジュール用ベース(2)が製造される。 Thereafter, the heat sink (9), the stress relaxation member (8), and the insulated circuit board (4) are temporarily fixed by an appropriate means, and are appropriately set to an appropriate temperature in a furnace having an inert gas atmosphere, for example, a nitrogen gas atmosphere. Heating is performed for a long time, and the heat sink (9) and the stress relaxation member (8), and the heat relaxation layer (7) of the stress relaxation member (8) and the insulated circuit board (4) are brazed. Thus, the power module base (2) is manufactured.
ヒートシンク(9)、応力緩和部材(8)および絶縁回路基板(4)を加熱した際に、溶融したフラックスが絶縁回路基板(4)の伝熱層(7)の周面(7a)に流れてくるが、伝熱層(7)の周面(7a)の表層部がフラックス侵入防止物として機能し、伝熱層(7)に含まれるＭｇとフラックスとが、たとえば
３Ｍｇ＋２ＫＡｌＦ４→２ＫＭｇＦ３＋ＭｇＦ２＋２Ａｌ・・・(a)
という反応を起こす。したがって、溶融フラックスの流れが止められることになり、溶融フラックスが伝熱層(7)の周面(7a)に沿って伝熱層(7)と絶縁板(5)との界面まで流れることが防止される。その結果、溶融フラックスが絶縁板(5)と伝熱層(7)との界面に悪影響を及ぼすことがなくなって、絶縁回路基板(4)の絶縁板(5)と伝熱層(7)との剥離が防止される。
When the heat sink (9), the stress relaxation member (8), and the insulated circuit board (4) are heated, the melted flux flows to the peripheral surface (7a) of the heat transfer layer (7) of the insulated circuit board (4). However, the surface layer portion of the peripheral surface (7a) of the heat transfer layer (7) functions as a flux intrusion preventer, and Mg and flux contained in the heat transfer layer (7) are, for example, 3Mg + 2KAlF 4 → 2KMgF 3 + MgF 2 + 2Al ... (a)
The reaction is caused. Therefore, the flow of the molten flux is stopped, and the molten flux may flow along the peripheral surface (7a) of the heat transfer layer (7) to the interface between the heat transfer layer (7) and the insulating plate (5). Is prevented. As a result, the molten flux does not adversely affect the interface between the insulating plate (5) and the heat transfer layer (7), and the insulating plate (5) and the heat transfer layer (7) of the insulating circuit board (4) Is prevented from peeling.
そして、伝熱層(7)の周面(7a)には、フラックスとフラックス侵入防止物との反応物であるＫＭｇＦ３およびＭｇＦ２という反応生成物（図示略）が残存する。 Then, on the peripheral surface (7a) of the heat transfer layer (7), reaction products (not shown) such as KMgF 3 and MgF 2 which are reaction products of the flux and the flux intrusion preventive substance remain.
図３は、パワーモジュール用ベースの絶縁回路基板と応力緩和部材とのろう付方法の他の実施形態を示す。 FIG. 3 shows another embodiment of a method for brazing an insulating circuit board of a power module base and a stress relaxation member.
まず、絶縁板(5)、配線層(6)および導電性に優れたアルミニウム、銅などの金属により形成され伝熱層(15)を有する絶縁回路基板(4)を用意する。絶縁回路基板(4)の伝熱層(15)は、電気伝導率が高く、変形能が高く、しかも半導体素子とのはんだ付け性に優れた純度の高い純アルミニウムにより形成されていることが好ましい。 First, an insulating circuit board (4) formed of an insulating plate (5), a wiring layer (6), and a metal such as aluminum and copper having excellent conductivity and having a heat transfer layer (15) is prepared. The heat transfer layer (15) of the insulated circuit board (4) is preferably formed of pure aluminum having high electrical conductivity, high deformability, and excellent solderability with a semiconductor element. .
ついで、ヒートシンク(9)上に応力緩和部材(8)を配置するとともに、応力緩和部材(8)にフッ化物系のフラックス、たとえばＫＡｌＦ４の懸濁液を塗布した後、応力緩和部材(8)上に絶縁回路基板(4)を配置する。 Next, the stress relaxation member (8) is disposed on the heat sink (9), and after applying a fluoride-based flux, for example, a suspension of KAlF 4 to the stress relaxation member (8), the stress relaxation member (8). An insulated circuit board (4) is placed on top.
また、絶縁回路基板(4)の伝熱層(15)の周面(15a)に沿って、溶融したフラックスと反応して溶融フラックスの流れを止めるフラックス流動防止物からなり、かつ伝熱層(15)とは別個に形成された箔(16)を配置する。箔(16)を形成するフラックス流動防止物としては、Ａｌ−Ｍｇ合金、Ｍｇ合金またはＭｇ化合物が用いられる。箔(16)を形成するフラックス流動防止物の量は、伝熱層(15)の周面(15a)の単位面積当たり０．１〜２０ｇ／ｍ２であることが好ましい。フラックス流動防止物の量が少ないとフラックスとの反応による溶融フラックスの流れを止める効果が十分ではなく、多すぎるとコストが高くなるおそれがあるからである。 Further, along the peripheral surface (15a) of the heat transfer layer (15) of the insulated circuit board (4), the heat transfer layer is made of a flux flow prevention material that reacts with the melted flux to stop the flow of the melted flux ( A foil (16) formed separately from 15) is arranged. As the flux flow prevention material forming the foil (16), an Al—Mg alloy, Mg alloy or Mg compound is used. The amount of the flux flow preventive that forms the foil (16) is preferably 0.1 to 20 g / m 2 per unit area of the peripheral surface (15a) of the heat transfer layer (15). This is because if the amount of the flux flow prevention material is small, the effect of stopping the flow of the molten flux due to the reaction with the flux is not sufficient, and if it is too large, the cost may increase.
Ａｌ−Ｍｇ合金としては、図１に示す絶縁回路基板(4)の伝熱層(7)と同様に、Ｍｇ０．００５〜０．２質量％を含み、残部Ａｌおよび不可避不純物からなるものが用いられる。Ｍｇ合金としては、Ｍｇを９０質量％以上含むものが用いられる。Ｍｇ合金中のＭｇ含有量が９０質量％未満であると、不純物量が過剰になり、加工性が低下したり、応力緩和部材(8)と伝熱層(15)とのろう付性が低下したりするおそれがある。Ｍｇ化合物としては、ＭｇＦ２、ＫＭｇＦ３などのＦおよびＫのうちの少なくとも１つを含むものが用いられる。 As the Al—Mg alloy, similar to the heat transfer layer (7) of the insulated circuit board (4) shown in FIG. 1, an alloy containing 0.005 to 0.2% by mass of Mg and the balance being Al and inevitable impurities is used. It is done. As the Mg alloy, an alloy containing 90% by mass or more of Mg is used. If the Mg content in the Mg alloy is less than 90% by mass, the amount of impurities becomes excessive, workability is reduced, and brazing between the stress relaxation member (8) and the heat transfer layer (15) is reduced. There is a risk of doing so. As the Mg compound, a compound containing at least one of F and K such as MgF 2 and KMgF 3 is used.
その後、ヒートシンク(9)、応力緩和部材(8)および絶縁回路基板(4)を適当な手段で仮止めし、不活性ガス雰囲気、たとえば窒素ガス雰囲気とされた炉中において、適当な温度に適当な時間加熱し、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(15)(7)をろう付する。こうして、パワーモジュール用ベース(2)が製造される。 Thereafter, the heat sink (9), the stress relaxation member (8), and the insulated circuit board (4) are temporarily fixed by an appropriate means, and are appropriately set to an appropriate temperature in a furnace having an inert gas atmosphere, for example, a nitrogen gas atmosphere. Heating is performed for a long time, and the heat sink (9) and the stress relaxation member (8), and the stress relaxation member (8) and the heat transfer layers (15) and (7) of the insulated circuit board (4) are brazed. Thus, the power module base (2) is manufactured.
ヒートシンク(9)、応力緩和部材(8)および絶縁回路基板(4)を加熱した際に、溶融したフラックスが絶縁回路基板(4)の伝熱層(15)の周面(15a)に流れてくるが、箔(16)を構成するフラックス侵入防止物とフラックスとが反応を起こす。したがって、溶融フラックスの流れが止められることになり、溶融フラックスが伝熱層(15)の周面(15a)に沿って伝熱層(15)と絶縁板(5)との界面まで流れることが防止される。その結果、溶融フラックスが絶縁板(5)と伝熱層(15)との界面に悪影響を及ぼすことがなくなって、絶縁回路基板(4)の絶縁板(5)と伝熱層(15)との剥離が防止される。 When the heat sink (9), the stress relaxation member (8), and the insulated circuit board (4) are heated, the melted flux flows to the peripheral surface (15a) of the heat transfer layer (15) of the insulated circuit board (4). However, the flux intrusion prevention material constituting the foil (16) reacts with the flux. Therefore, the flow of the molten flux is stopped, and the molten flux may flow along the peripheral surface (15a) of the heat transfer layer (15) to the interface between the heat transfer layer (15) and the insulating plate (5). Is prevented. As a result, the molten flux does not adversely affect the interface between the insulating plate (5) and the heat transfer layer (15), and the insulating plate (5) and the heat transfer layer (15) of the insulating circuit board (4) Is prevented from peeling.
箔(16)を形成するフラックス流動防止物としてＡｌ−Ｍｇ合金を用いる場合のフラックスとの反応は、上記式(a)の通りである。 The reaction with the flux in the case of using an Al—Mg alloy as the flux flow preventive for forming the foil (16) is represented by the above formula (a).
箔(16)を形成するフラックス流動防止物としてＭｇ化合物を用いる場合、フラックスとは、次の反応を起こす。 When an Mg compound is used as the flux flow preventive for forming the foil (16), the following reaction occurs with the flux.
ＭｇＦ２＋ＫＡｌＦ４→ＫＭｇＦ３＋ＡｌＦ３・・・(b)
ＫＭｇＦ３＋ＫＡｌＦ４→Ｋ２ＭｇＦ４＋ＡｌＦ３・・・(c)
箔(16)を形成するフラックス流動防止物としてＭｇ合金を用いる場合、フラックスとは、次の反応を起こす。
MgF 2 + KAlF 4 → KMgF 3 + AlF 3 (b)
KMgF 3 + KAlF 4 → K 2 MgF 4 + AlF 3 (c)
When an Mg alloy is used as the flux flow preventive for forming the foil (16), the following reaction occurs with the flux.
３Ｍｇ＋２ＫＡｌＦ４→２ＫＭｇＦ３＋ＭｇＦ２＋２Ａｌ・・・(d)
したがって、溶融フラックスの流れが止められることになり、溶融フラックスが伝熱層(15)の周面(15a)に沿って伝熱層(15)と絶縁板(5)との界面まで流れることが防止される。その結果、溶融フラックスが絶縁板(5)と伝熱層(15)との界面に悪影響を及ぼすことがなくなって、絶縁回路基板(4)の絶縁板(5)と伝熱層(15)との剥離が防止される。
3Mg + 2KAlF 4 → 2KMgF 3 + MgF 2 + 2Al (d)
Therefore, the flow of the molten flux is stopped, and the molten flux may flow along the peripheral surface (15a) of the heat transfer layer (15) to the interface between the heat transfer layer (15) and the insulating plate (5). Is prevented. As a result, the molten flux does not adversely affect the interface between the insulating plate (5) and the heat transfer layer (15), and the insulating plate (5) and the heat transfer layer (15) of the insulating circuit board (4) Is prevented from peeling.
そして、伝熱層(15)の周面(15a)には、フラックスとフラックス侵入防止物との反応物である２ＫＭｇＦ３、ＭｇＦ２、ＫＭｇＦ３、ＡｌＦ３、Ｋ２ＭｇＦ４などの反応生成物（図示略）が残存する。 On the peripheral surface (15a) of the heat transfer layer (15), reaction products such as 2KMgF 3 , MgF 2 , KMgF 3 , AlF 3 , K 2 MgF 4 , which are reactants of the flux and the flux intrusion preventive, are formed. (Not shown) remains.
図４は、パワーモジュール用ベースの絶縁回路基板と応力緩和部材とのろう付方法のさらに他の実施形態を示す。 FIG. 4 shows still another embodiment of the brazing method between the power module base insulating circuit board and the stress relaxation member.
図４に示す方法においては、フラックス流動防止物からなる箔(16)の代わりに、絶縁回路基板(4)の伝熱層(15)の周面(15a)に沿って、溶融したフラックスと反応して溶融フラックスの流れを止めるフラックス流動防止物からなり、かつ伝熱層(15)とは別個に形成された線材(20)を配置する。その他は、図３に示す方法と同様である。線材(20)は、箔(16)と同様な材料からなり、箔(16)と同様にして溶融フラックスと反応を起こす。 In the method shown in FIG. 4, instead of the foil (16) made of flux flow prevention material, the molten flux reacts with the molten flux along the peripheral surface (15a) of the heat transfer layer (15) of the insulated circuit board (4). Then, a wire rod (20) made of a flux flow prevention material that stops the flow of the molten flux and formed separately from the heat transfer layer (15) is disposed. Others are the same as the method shown in FIG. The wire (20) is made of the same material as the foil (16), and reacts with the molten flux in the same manner as the foil (16).
さらに、図３および図４に示すパワーモジュール用ベースの絶縁回路基板と応力緩和部材とのろう付方法において、フラックス流動防止物からなる箔(16)または線材(20)の代わりに、伝熱層(15)の周面(15a)に、粒子状のフラックス流動防止物を付着させておいてもよい。フラックス流動防止物としては、ＭｇＦ２、ＫＭｇＦ３などのＦ、ＫおよびＡｌのうちの少なくとも１つを含むＭｇ化合物が用いられる。伝熱層(15)の周面(15a)に付着させる粒子状フラックス流動防止物の量は、伝熱層(15)の周面(15a)の単位面積当たり０．１〜２０ｇ／ｍ２であることが好ましい。フラックス流動防止物の量が少ないとフラックスとの反応による溶融フラックスの流れを止める効果が十分ではなく、多すぎるとコストが高くなるおそれがあるからである。 Further, in the method for brazing the insulating circuit board of the power module base and the stress relaxation member shown in FIGS. 3 and 4, a heat transfer layer is used instead of the foil (16) or the wire (20) made of the flux flow prevention material. A particulate flux flow preventive may be adhered to the peripheral surface (15a) of (15). As the flux flow preventive, an Mg compound containing at least one of F, K and Al such as MgF 2 and KMgF 3 is used. The amount of the particulate flux flow preventive material adhered to the peripheral surface (15a) of the heat transfer layer (15) is 0.1 to 20 g / m 2 per unit area of the peripheral surface (15a) of the heat transfer layer (15). Preferably there is. This is because if the amount of the flux flow prevention material is small, the effect of stopping the flow of the molten flux due to the reaction with the flux is not sufficient, and if it is too large, the cost may increase.
粒子状フラックス流動防止物は、バインダと混合して塗布することにより伝熱層(15)の周面(15a)に付着させられる。ここで、粒子状フラックス流動防止物の平均粒径は３〜１００μｍ程度であることが好ましい。また、バインダとしてはアクリル系のものが用いられる。粒子状フラックス流動防止物とバインダとの混合比は、粒子状フラックス流動防止物１００重量部に対して、バインダ３０〜３００重量部とすることが好ましい。 The particulate flux flow preventive is adhered to the peripheral surface (15a) of the heat transfer layer (15) by being mixed with a binder and applied. Here, the average particle diameter of the particulate flux flow preventive is preferably about 3 to 100 μm. An acrylic material is used as the binder. The mixing ratio of the particulate flux flow preventive and the binder is preferably 30 to 300 parts by weight of the binder with respect to 100 parts by weight of the particulate flux flow preventive.
上記において、絶縁回路基板(4)の伝熱層(7)(15)は応力緩和部材(8)にろう付されているが、応力緩和部材(8)は必ずしも必要とせず、絶縁回路基板(4)の伝熱層(7)(15)が直接ヒートシンク(9)にろう付されていてもよい。 In the above, the heat transfer layer (7) (15) of the insulated circuit board (4) is brazed to the stress relaxation member (8), but the stress relaxation member (8) is not necessarily required, and the insulated circuit board ( The heat transfer layers (7) and (15) of 4) may be brazed directly to the heat sink (9).
次に、この発明の具体的実施例を比較例とともに述べる。 Next, specific examples of the present invention will be described together with comparative examples.
実施例１
厚みが０．６ｍｍの窒化アルミニウム製絶縁板(5)と、純度９９．９９wt％の純アルミニウムからなり、かつ絶縁板(5)の一面に形成された厚みが０．６ｍｍの配線層(6)と、純度９９．９９wt％の純アルミニウムからなり、かつ絶縁板(5)の他面に形成された厚みが０．６ｍｍの伝熱層(15)とよりなる絶縁回路基板(4)を用意した。また、アルミニウム製ヒートシンク(9)と、両面にろう材層が設けられ、かつ複数の円形貫通穴(11)が形成されたアルミニウムブレージングシート製応力緩和部材(8)とを用意した。
Example 1
An aluminum nitride insulating plate (5) having a thickness of 0.6 mm and a wiring layer (6) made of pure aluminum having a purity of 99.99 wt% and formed on one surface of the insulating plate (5) having a thickness of 0.6 mm And an insulating circuit board (4) made of pure aluminum having a purity of 99.99 wt% and comprising a heat transfer layer (15) having a thickness of 0.6 mm formed on the other surface of the insulating plate (5). . In addition, an aluminum heat sink (9) and an aluminum brazing sheet stress relaxation member (8) provided with a brazing filler metal layer on both sides and formed with a plurality of circular through holes (11) were prepared.
ついで、ヒートシンク(9)上に応力緩和部材(8)を配置するとともに、応力緩和部材(8)にＫＡｌＦ４の懸濁液を、ＫＡｌＦ４の付着量が５ｇ／ｍ２となるように塗布した。ＫＡｌＦ４の塗布は、ＫＡｌＦ４を水に懸濁させた懸濁液をスプレーで塗布することにより行った。 Then, along with arranging the stress relaxation member (8) on the heat sink (9), a suspension of KAlF 4 the stress relaxation member (8), the adhesion amount of KAlF 4 was coated to a 5 g / m 2 . KAlF 4 was applied by spraying a suspension of KAlF 4 in water.
ついで、応力緩和部材(8)上に絶縁回路基板(4)を配置し、絶縁回路基板(4)の伝熱層(15)の周囲に、Ａｌ３質量％、Ｚｎ１質量％を含み、残部Ｍｇおよび不可避不純物からなるＭｇ合金で形成され、かつ伝熱層(15)とは別個に形成された箔(16)を配置した。箔(16)を形成するフラックス流動防止物の量は、伝熱層(15)の周面(15a)の単位面積当たり１０ｇ／ｍ２とした。なお、上記Ｍｇ合金中のＭｇ含有量は当然のことながら９０質量％以上である。
Next, the insulating circuit board (4) is arranged on the stress relaxation member (8), and the surrounding of the heat transfer layer (15) of the insulating circuit board (4) contains
その後、ヒートシンク(9)、応力緩和部材(8)および絶縁回路基板(4)を適当な手段で仮止めし、窒素ガス雰囲気とされた炉中において、６００℃に５分間加熱し、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(15)をろう付した。 Thereafter, the heat sink (9), the stress relieving member (8) and the insulating circuit board (4) are temporarily fixed by appropriate means, heated in a furnace in a nitrogen gas atmosphere at 600 ° C. for 5 minutes, and the heat sink (9 ) And the stress relaxation member (8), and the heat transfer layer (15) of the stress relaxation member (8) and the insulated circuit board (4).
ろう付後の伝熱層(15)の周面(15a)には、ＭｇＦ２、ＫＭｇＦ３、Ｋ２ＭｇＦ４が残存していた。 MgF 2 , KMgF 3 , and K 2 MgF 4 remained on the peripheral surface (15a) of the heat transfer layer (15) after brazing.
実施例２
フラックス流動防止物として、粒子状のＭｇＦ２を使用し、粒子状ＭｇＦ２をアクリル系バインダと混合して塗布することによって、伝熱層(15)の周面(15a)に付着させた。フラックス流動防止物の量は、伝熱層(15)の周面(15a)の単位面積当たり１０ｇ／ｍ２とした。その他は、上記実施例１と同様な条件で、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(15)をろう付した。
Example 2
Particulate MgF 2 was used as a flux flow preventive, and the particulate MgF 2 was mixed with an acrylic binder and applied to adhere to the peripheral surface (15a) of the heat transfer layer (15). The amount of the flux flow preventive was 10 g / m 2 per unit area of the peripheral surface (15a) of the heat transfer layer (15). Other than that, the heat sink (9) and the stress relaxation member (8) and the heat transfer layer (15) of the stress relaxation member (8) and the insulated circuit board (4) were brazed under the same conditions as in Example 1 above. .
ろう付後の伝熱層(15)の周面(15a)には、ＫＭｇＦ３およびＡｌＦ３が残存していた。 KMgF 3 and AlF 3 remained on the peripheral surface (15a) of the heat transfer layer (15) after brazing.
実施例３
フラックス侵入防止物として、粒子状のＫＭｇＦ３を使用し、粒子状ＫＭｇＦ３をアクリル系バインダと混合して塗布することによって、伝熱層(15)の周面(15a)に付着させた。フラックス流動防止物の量は、伝熱層(15)の周面(15a)の単位面積当たり１０ｇ／ｍ２とした。その他は、上記実施例１と同様な条件で、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(15)をろう付した。
Example 3
Particulate KMgF 3 was used as a flux intrusion preventive, and the particulate KMgF 3 was mixed with an acrylic binder and applied to adhere to the peripheral surface (15a) of the heat transfer layer (15). The amount of the flux flow preventive was 10 g / m 2 per unit area of the peripheral surface (15a) of the heat transfer layer (15). Other than that, the heat sink (9) and the stress relaxation member (8) and the heat transfer layer (15) of the stress relaxation member (8) and the insulated circuit board (4) were brazed under the same conditions as in Example 1 above. .
ろう付後の伝熱層(15)の周面(15a)には、Ｋ２ＭｇＦ４およびＡｌＦ３が残存していた。 K 2 MgF 4 and AlF 3 remained on the peripheral surface (15a) of the heat transfer layer (15) after brazing.
実施例４
フラックス侵入防止物として、Ｍｇ０．１質量％を含み、残部Ａｌおよび不可避不純物よりなるＡｌ−Ｍｇ合金からなり、かつ伝熱層(15)とは別個に形成された箔(16)を配置した。箔(16)を形成するフラックス流動防止物の量は、伝熱層(15)の周面(15a)の単位面積当たり１０ｇ／ｍ２とした。その他は、上記実施例１と同様な条件で、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(15)をろう付した。
Example 4
As a flux intrusion prevention material, a foil (16) containing 0.1% by mass of Mg, made of an Al—Mg alloy composed of the balance Al and inevitable impurities, and formed separately from the heat transfer layer (15) was disposed. The amount of the flux flow prevention material forming the foil (16) was 10 g / m 2 per unit area of the peripheral surface (15a) of the heat transfer layer (15). Other than that, the heat sink (9) and the stress relaxation member (8) and the heat transfer layer (15) of the stress relaxation member (8) and the insulated circuit board (4) were brazed under the same conditions as in Example 1 above. .
ろう付後の伝熱層(15)の周面(15a)には、ＫＭｇＦ３およびＭｇＦ２が残存していた。 KMgF 3 and MgF 2 remained on the peripheral surface (15a) of the heat transfer layer (15) after brazing.
実施例５
絶縁回路基板(4)として、厚みが０．６ｍｍの窒化アルミニウム製絶縁板(5)と、純度９９．９９wt％の純アルミニウムで形成された厚みが０．６ｍｍの配線層(6)と、Ｍｇ０．０１質量％を含み、残部Ａｌおよび不可避不純物よりなるＡｌ−Ｍｇ合金で形成された厚みが０．６ｍｍの伝熱層(7)を有するものを用いた。
Example 5
As an insulating circuit board (4), an aluminum nitride insulating plate (5) having a thickness of 0.6 mm, a wiring layer (6) having a thickness of 0.6 mm made of pure aluminum having a purity of 99.99 wt%, and Mg0 A layer having a heat transfer layer (7) having a thickness of 0.6 mm and made of an Al—Mg alloy including the remaining Al and inevitable impurities was used.
そして、伝熱層(7)の周囲にフラックス流動防止物を配置しなかったことを除いては上記実施例１と同様な条件で、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(7)をろう付した。 The heat sink (9), the stress relaxation member (8), and the stress relaxation are the same as in Example 1 except that no flux flow prevention material is disposed around the heat transfer layer (7). The member (8) and the heat transfer layer (7) of the insulated circuit board (4) were brazed.
ろう付後の伝熱層(15)の周面(15a)には、ＫＭｇＦ３およびＭｇＦ２が残存していた。 KMgF 3 and MgF 2 remained on the peripheral surface (15a) of the heat transfer layer (15) after brazing.
実施例６
絶縁回路基板(4)の厚みが０．６ｍｍである伝熱層(7)を、Ｍｇ０．００２質量％を含み、残部Ａｌおよび不可避不純物よりなるＡｌ−Ｍｇ合金で形成しておいた。
Example 6
The heat transfer layer (7) having an insulating circuit board (4) thickness of 0.6 mm was made of an Al—Mg alloy containing 0.002% by mass of Mg and the balance being Al and inevitable impurities.
その他は、上記実施例５と同様な条件で、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(15)をろう付した。 Otherwise, the heat sink (9) and the stress relaxation member (8) and the heat transfer layer (15) of the stress relaxation member (8) and the insulated circuit board (4) were brazed under the same conditions as in Example 5 above. .
ろう付後の伝熱層(15)の周面(15a)には、ＫＭｇＦ３およびＭｇＦ２が残存していた。 KMgF 3 and MgF 2 remained on the peripheral surface (15a) of the heat transfer layer (15) after brazing.
比較例
絶縁回路基板の伝熱層の周囲にフラックス流動防止物を配置しなかったことを除いては、上記実施例１と同様な条件で、ヒートシンク(9)と応力緩和部材(8)、および応力緩和部材(8)と絶縁回路基板(4)の伝熱層(15)をろう付した。なお、当然のことながら、伝熱層(15)はフラックス流動防止物として機能するＡｌ−Ｍｇ合金で形成されていない。
Comparative Example A heat sink (9), a stress relieving member (8), and a heat sink (9) under the same conditions as in Example 1 above, except that no flux flow prevention material was disposed around the heat transfer layer of the insulated circuit board. The stress relaxation member (8) and the heat transfer layer (15) of the insulated circuit board (4) were brazed. As a matter of course, the heat transfer layer (15) is not formed of an Al—Mg alloy functioning as a flux flow preventer.
評価試験
応力緩和部材(8))にろう付された絶縁回路基板(4)を観察し、伝熱層(7)(15)の絶縁板(5)からの剥離の有無および剥離が生じた場合の剥離量を調べた。剥離量は、伝熱層(7)(15)の周縁部からの剥離の距離を測定した。その結果を表１に示す。なお、実施例１〜６においては、表１に、用いたフラックス流動防止物の種類も記入した。
表１の評価の欄において、○は、伝熱層(7)(15)の絶縁板(5)からの剥離が認められなかったものを示し、△は、剥離量（伝熱層(7)(15)の周縁部からの剥離距離）が１００μｍ未満のもとを示し、×は、剥離量（伝熱層(7)(15)の周縁部からの剥離距離）が１００μｍのものを示す。 In the evaluation column of Table 1, ○ indicates that the heat transfer layer (7) (15) was not peeled from the insulating plate (5), and Δ indicates the amount of peel (heat transfer layer (7) (15) indicates that the peel distance from the peripheral portion is less than 100 μm, and x indicates that the peel amount (the peel distance from the peripheral portion of the heat transfer layer (7) (15)) is 100 μm.
この発明による積層絶縁材のろう付方法は、パワーデバイスが実装されてパワーモジュールとされるパワモジュール用ベースの製造に適用される。 The method for brazing a laminated insulating material according to the present invention is applied to manufacture of a power module base in which a power device is mounted to form a power module.
(4)：絶縁回路基板（絶縁積層材）
(5)：絶縁板
(6)：配線層（金属層）
(7)(15)：伝熱層（金属層）
(7a)(15a)：周面
(8)：応力緩和部材（金属部材）
(16)：フラックス流動防止物からなる箔
(20)：フラックス流動防止物からなる線材
(4): Insulated circuit board (insulating laminated material)
(5): Insulating plate
(6): Wiring layer (metal layer)
(7) (15): Heat transfer layer (metal layer)
(7a) (15a): Circumferential surface
(8): Stress relaxation member (metal member)
(16): Foil made of flux flow prevention material
(20): Wire made of flux flow prevention material
Claims (15)
金属部材にろう付される絶縁積層材の金属層の周囲に、溶融したフラックスと反応して溶融フラックスの流れを止めるフラックス流動防止物を存在させておき、フラックスを使用して炉中でろう付することを特徴とする絶縁積層材のろう付方法。 A method for brazing a metal layer of an insulating laminate comprising an insulating plate and a metal layer provided on at least one side of the insulating plate to a metal member,
Around the metal layer of the insulation laminate to be brazed to the metal member, there is a flux flow preventer that stops the flow of the molten flux by reacting with the molten flux, and brazing in the furnace using the flux. A method for brazing an insulating laminated material.
絶縁積層材の一方の金属層とヒートシンクとが、請求項１〜１２のうちのいずれかに記載の方法によりろう付されており、ヒートシンクにろう付された金属層の周面に、フラックスとフラックス侵入防止物との反応物が残存している放熱装置。 A heat dissipation device comprising an insulating laminate and an insulating laminate having metal layers provided on both sides of the insulating plate, and a heat sink in which one metal layer of the insulating laminate is brazed,
One metal layer of the insulating laminate and the heat sink are brazed by the method according to any one of claims 1 to 12, and a flux and a flux are formed on a peripheral surface of the metal layer brazed to the heat sink. A heat dissipation device in which reactants with intrusion prevention substances remain.
絶縁積層材の一方の金属層と応力緩和部材とが、請求項１〜１２のうちのいずれかに記載の方法によりろう付されており、応力緩和部材にろう付された金属層の周面に、フラックスとフラックス侵入防止物との反応物が残存している放熱装置。 Insulating plate and insulating laminated material provided with metal layers on both surfaces of insulating plate, stress relaxation member in which one metal layer of insulating laminated material is brazed, and one metal layer of insulating laminated material in stress relaxing member A heat dissipating device comprising a heat sink brazed on the surface opposite to the brazed surface,
The one metal layer of the insulating laminate and the stress relaxation member are brazed by the method according to any one of claims 1 to 12, and the peripheral surface of the metal layer brazed to the stress relaxation member The heat dissipation device in which the reaction product of the flux and the flux intrusion prevention material remains.
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| JP2013122996A (en) * | 2011-12-12 | 2013-06-20 | Mitsubishi Materials Corp | Substrate for power module, substrate for power module with heat sink, and power module |
| WO2013089099A1 (en) * | 2011-12-12 | 2013-06-20 | 三菱マテリアル株式会社 | Power module substrate, substrate for power module with heat sink, power module, paste for forming flux component penetration prevention layer, and bonding method for article to be bonded |
| JP2013157464A (en) * | 2012-01-30 | 2013-08-15 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module with heat sink |
| JP2013157524A (en) * | 2012-01-31 | 2013-08-15 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module with heat sink and substrate for power module |
| JP2013157361A (en) * | 2012-01-26 | 2013-08-15 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module with heat sink |
| JP2013191641A (en) * | 2012-03-12 | 2013-09-26 | Mitsubishi Materials Corp | Method for manufacturing substrate for power module with heat sink |
| CN104582894A (en) * | 2012-09-04 | 2015-04-29 | 株式会社神户制钢所 | Aluminum composite material, heat exchanger, and flux |
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| JP2012094839A (en) * | 2010-09-29 | 2012-05-17 | Mitsubishi Materials Corp | Substrate for power module, and method for manufacturing substrate for power module with heat sink |
| JP2012146813A (en) * | 2011-01-12 | 2012-08-02 | Showa Denko Kk | Method of manufacturing substrate for mounting electronic element |
| CN103988297A (en) * | 2011-12-12 | 2014-08-13 | 三菱综合材料株式会社 | Power module substrate, substrate for power module with heat sink, power module, paste for forming flux component penetration prevention layer, and bonding method for article to be bonded |
| JP2013122996A (en) * | 2011-12-12 | 2013-06-20 | Mitsubishi Materials Corp | Substrate for power module, substrate for power module with heat sink, and power module |
| WO2013089099A1 (en) * | 2011-12-12 | 2013-06-20 | 三菱マテリアル株式会社 | Power module substrate, substrate for power module with heat sink, power module, paste for forming flux component penetration prevention layer, and bonding method for article to be bonded |
| JP2013121611A (en) * | 2011-12-12 | 2013-06-20 | Mitsubishi Materials Corp | Paste for forming flux component intrusion-preventing layer, and method for joining junction body |
| JP2013157361A (en) * | 2012-01-26 | 2013-08-15 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module with heat sink |
| JP2013157464A (en) * | 2012-01-30 | 2013-08-15 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module with heat sink |
| JP2013157524A (en) * | 2012-01-31 | 2013-08-15 | Mitsubishi Materials Corp | Manufacturing method of substrate for power module with heat sink and substrate for power module |
| JP2013191641A (en) * | 2012-03-12 | 2013-09-26 | Mitsubishi Materials Corp | Method for manufacturing substrate for power module with heat sink |
| CN104582894A (en) * | 2012-09-04 | 2015-04-29 | 株式会社神户制钢所 | Aluminum composite material, heat exchanger, and flux |
| US20150211816A1 (en) * | 2012-09-04 | 2015-07-30 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Aluminum composite material, heat exchanger, and flux |
| US20180347922A1 (en) * | 2012-09-04 | 2018-12-06 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Aluminum composite material, heat exchanger, and flux |
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