JP2011228523A - Insulating substrate and wiring component having penetrating conductor and manufacturing method for the same - Google Patents
Insulating substrate and wiring component having penetrating conductor and manufacturing method for the same Download PDFInfo
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- JP2011228523A JP2011228523A JP2010097792A JP2010097792A JP2011228523A JP 2011228523 A JP2011228523 A JP 2011228523A JP 2010097792 A JP2010097792 A JP 2010097792A JP 2010097792 A JP2010097792 A JP 2010097792A JP 2011228523 A JP2011228523 A JP 2011228523A
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- 239000000758 substrate Substances 0.000 title claims abstract description 132
- 239000004020 conductor Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 230000000149 penetrating effect Effects 0.000 title abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 142
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- 244000126211 Hericium coralloides Species 0.000 claims abstract description 56
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000005452 bending Methods 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 32
- 238000005520 cutting process Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 11
- 238000005488 sandblasting Methods 0.000 claims description 10
- 238000004080 punching Methods 0.000 claims description 8
- 238000003698 laser cutting Methods 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 18
- 238000009429 electrical wiring Methods 0.000 description 10
- 230000035515 penetration Effects 0.000 description 9
- 238000005553 drilling Methods 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
Description
本発明は、貫通導体を有する絶縁基板と配線部品およびその製造方法に関し、特に、金属薄板材の切り抜き・折り曲げ部分を貫通導体に用いる貫通導体付き絶縁基板とその製造方法に関する。 The present invention relates to an insulating substrate having a through conductor, a wiring component, and a manufacturing method thereof, and more particularly, to an insulating substrate with a through conductor using a cut-out and bent portion of a thin metal plate material as a through conductor and a manufacturing method thereof.
貫通導体を有する絶縁基板は、半導体チップや小型電子部品を搭載する小型で信頼性の高い配線基板として知られている。特許文献1は、貫通孔を有するセラミック配線基板において、ガラス貫通孔部分を焼結導体から金属ブロックに変えることで、貫通孔の金属およびガラスにボイドが無く貫通孔部分の比抵抗をより低い値にして、研磨後の基板表面に凹みをほとんど無くして薄膜配線を形成に適した貫通電極付き絶縁基板を開示する。また、特許文献2は、高精度な孔あけ加工と金属薄板材充填により貫通電極付きガラス基板の製造方法を開示する。この場合、ガラス板材にドリル加工で必要な孔を作製後、孔内壁にアンカー金属膜およびろう付け介在膜を形成した上で、孔内に金属心材をろう付けし、両面を研磨して貫通電極付きガラス基板を得ている。さらに、特許文献3は、比較的簡単で高精度に製造できる配線用絶縁基板および孔あき絶縁基板の製造方法を提示し、所定形状に成形加工した耐熱部材と、この耐熱部材の軟化点より低い軟化点を有する軟化溶融状態の絶縁基板素材とを当接させ、重し荷重を付与して耐熱部材を絶縁基板素材に食い込ませ、その合体部材の徐冷後に表面研磨を含む仕上加工したガラスまたはガラスセラミック絶縁基板を提供している。 An insulating substrate having a through conductor is known as a small and highly reliable wiring substrate on which a semiconductor chip and a small electronic component are mounted. Patent Document 1 discloses that in a ceramic wiring board having a through hole, by changing the glass through hole portion from a sintered conductor to a metal block, there is no void in the metal and glass of the through hole, and the specific resistance of the through hole portion is lower. Thus, an insulating substrate with a through electrode suitable for forming a thin film wiring with almost no dents on the polished substrate surface is disclosed. Moreover, patent document 2 discloses the manufacturing method of the glass substrate with a through-electrode by highly accurate drilling and metal thin plate material filling. In this case, after making the necessary holes by drilling in the glass plate material, after forming the anchor metal film and brazing intervening film on the inner wall of the hole, brazing the metal core material into the hole, polishing both sides, and penetrating electrode The attached glass substrate is obtained. Furthermore, Patent Document 3 presents a method of manufacturing a wiring insulating substrate and a perforated insulating substrate that can be manufactured relatively easily and with high accuracy, and has a heat-resistant member molded into a predetermined shape and a softening point lower than the heat-resistant member. Glass that has been subjected to finishing processing including surface polishing after gradually cooling the coalescing member by bringing a heat-resistant member into the insulating substrate material by applying a weight load by contacting a softened and melted insulating substrate material having a softening point A glass ceramic insulating substrate is provided.
ところで、マイクロリアクター(microreactor)は、一般的にはマイクロチャネルを使うマイクロ熱交換器などの装置とともに、マイクロプロセス工学の分野で研究されるものであるが、一辺当たり1mm以下の大きさの空間で化学反応を行う装置である。このようなマイクロリアクターでは、その配線部品として微細加工による貫通導体や電極などの配線が要求されている。このような配線部品においては、貫通電極付き絶縁基板の導電体を埋設する配線精度に関し、貫通孔であるビア位置精度が通常は±50μm程度であるのを±20μm程度、ビア径が通常は250μmであるのを100μm以下、さらに、ビアピッチが通常は300μmであるのを150μm以下にすることが所望される。このような高精度で微細加工の配線部品を調達するには、前述する特許文献が開示するような電極付き絶縁基板の製造方法では満足な結果を得ることが困難であった。例えば、特許文献1のセラミック配線基板は、貫通導体部分が金属ブロックから成り、その製造方法では軟化点600℃のほう珪酸ガラスにガラスが充分に流動するような温度(1100℃)で剣山状タングステンブロックを完全に沈めた後、減圧・徐冷して剣山状タングステンブロックの上部を切断除去しているので、製造毎に用意する剣山状タングステンブロックの利用率が極めて低くなり、上述の微細化と高精度が得られない。また、モリブデンやタングステンのブロックに剣山を作るダイサー加工作業で工数が増大して高コスト化を招く。 By the way, a microreactor (microreactor) is generally studied in the field of microprocess engineering together with a device such as a micro heat exchanger using a microchannel, but in a space of 1 mm or less per side. It is a device that performs chemical reactions. In such a microreactor, wiring such as through conductors and electrodes by microfabrication is required as the wiring component. In such wiring parts, regarding the wiring accuracy for embedding the conductor of the insulating substrate with the through electrode, the via position accuracy of the through hole is usually about ± 50 μm, and the via diameter is usually 250 μm. It is desired that the via pitch is usually 300 μm or less and that the via pitch is usually 300 μm or less. In order to procure such highly accurate and finely processed wiring parts, it has been difficult to obtain satisfactory results by the method for manufacturing an insulating substrate with electrodes as disclosed in the above-mentioned patent document. For example, the ceramic wiring board of Patent Document 1 has a penetrating conductor portion made of a metal block, and in its manufacturing method, a sword-like tungsten at a temperature (1100 ° C.) at which the glass can sufficiently flow into a borosilicate glass having a softening point of 600 ° C. After the block is completely submerged, the top of the sword mountain tungsten block is cut and removed by decompression and slow cooling, so the utilization rate of the sword mountain tungsten block prepared for each production becomes extremely low, and the above-mentioned miniaturization and High accuracy cannot be obtained. Also, the dicer processing work that creates a sword on a molybdenum or tungsten block increases the number of man-hours, leading to higher costs.
一方、特許文献2は、ガラス材料の孔あけ後に金属薄板材を充填する、貫通電極付きガラス基板の製造方法を開示するが、ガラス板材のドリル加工とその貫通孔内壁にアンカー金属膜の形成、およびその上にろう付け介在膜の形成、金属心材の挿入・密封・固定と両面の研磨加工、ドリルによる個別的孔あけなどで多数の貫通電極を作製する際には加工処理時間の増加が著しい。また、実用可能なドリル径の細さに限度があって、概ねφ300μm以上の孔径となって極細径や微小ピッチの貫通電極の作製は困難である。また、特許文献3は、治具を用いて金属ピンをガラス板上に垂直に整列させておき、これを高温加熱した軟化状態のガラス中に貫入させるため、ピン位置精度の向上に問題が残され、ピン相互間のピッチ精度が得られ難い。また、金属ピンを垂直に整列させるための治具がコスト高となるほかピン材料の損失が多いなどの欠点があった。 On the other hand, Patent Document 2 discloses a method of manufacturing a glass substrate with a through electrode that is filled with a thin metal plate material after drilling the glass material, but drilling the glass plate material and forming an anchor metal film on the inner wall of the through hole, In addition, when processing a large number of through-electrodes by forming a brazing intervening film, inserting / sealing / fixing a metal core material, polishing both sides, and drilling individual holes, the processing time increases significantly. . In addition, there is a limit to the diameter of the drill that can be practically used, and it is difficult to produce a through-hole electrode having an extremely fine diameter or a fine pitch with a hole diameter of approximately φ300 μm or more. In Patent Document 3, a metal pin is vertically aligned on a glass plate using a jig, and this is inserted into a softened glass heated at a high temperature, so that there remains a problem in improving the pin position accuracy. Therefore, it is difficult to obtain the pitch accuracy between pins. In addition, the jigs for aligning the metal pins vertically are disadvantageous in that the cost is high and the loss of the pin material is large.
したがって、本発明の目的は、上述する欠点を解消し、所望される高精細度で微細加工要請に鑑み提案されたものであり、従来のコスト問題を排除して高精度の微細化で量産化に適応する新規かつ改良された貫通導体を有する絶縁基板と配線部品およびそれらの製造方法を提示することである Therefore, the object of the present invention is to solve the above-mentioned drawbacks and was proposed in view of the demand for fine processing with a desired high definition, and eliminates the conventional cost problem and is mass-produced with high precision miniaturization. Insulating substrate and wiring component having new and improved through conductors adapted to the above and a method for manufacturing them
本発明の他の目的は、金属薄板を用いて低コスト化と共に微細径で微小ピッチの貫通導体と、その導体と一体化した配線電極等を設けた配線部品、特に量産に適するコスト効率の良い貫通導体を有する配線部品を提供し、各種応用形態に利用可能とするものである。 Another object of the present invention is to reduce the cost by using a thin metal plate and to provide a wiring component provided with a through-conductor having a fine diameter and a small pitch and a wiring electrode integrated with the conductor, particularly cost-effective suitable for mass production. A wiring component having a through conductor is provided and can be used in various application forms.
本発明によれば、金属薄板材の複数個所に切り欠きと折り曲げにより直立させた櫛歯部分を設ける切り欠き折り曲げ工程、高温で軟化状態の絶縁基板材と各櫛歯部分の直立先端とを当接配置して絶縁基板材に櫛歯部分を植設する押し込み挿入工程、冷却後前記絶縁基板材に植設された櫛歯部分を残して金属薄板材を切り離す工程、および前記絶縁基板材に前記櫛歯部分を露呈させ貫通導体に表面研磨する工程を含む貫通導体を有する絶縁基板の製造方法が提示され、この方法により、金属薄板材に形成した櫛歯部分を折り曲げて絶縁基板材に貫通挿入させて貫通導体とした絶縁基板を提供する。ここで、櫛歯部分は研磨により露呈した貫通導体を得るが、必要に応じて、電極や所望する電気部品とするための処理工程を経ることで貫通導体を有する配線部品を製造する。なお、金属薄板材に複数個の櫛歯部分を設けることで製造工程の一括処理が可能となり、完成品の均一化と量産化に役立ち、低コスト化が図れる。すなわち、第一工程は目的に応じて用意される材質の金属薄板材をエッチング等の処理による部分的に切り欠いたり薄くしたりして所望するピッチ間隔や線径の櫛歯部分を成形加工し、櫛歯部分を垂直に折り曲げて直立させて剣山とする。第二工程は、この剣山の多数の櫛歯部分上に高温で軟化状態のガラスまたは樹脂の絶縁基板材を載せるか、逆に櫛歯部分を軟化状態の絶縁基板材の上に載置する。そして、両者当接配置後に、櫛歯部分を軟化状態の絶縁基板材に押し込んで貫入させる。第三工程は、冷却後、金属薄板材を切断除去し絶縁基板材の両面を研磨して表面上に存在する突出物や絶縁基板材に隠れた櫛歯部分を露出させて面一に表面加工処理する。このようにして、金属薄板材の櫛歯部分が絶縁基板に埋設した貫通導体と必要に応じてその周辺に導電体電極を有する貫通導体を有する配線部品を得る。 According to the present invention, a notch bending process in which notched and bent comb teeth are provided at a plurality of locations on a thin metal sheet material, the insulating substrate material softened at high temperature and the upright tips of the respective comb teeth are abutted. A step of inserting and inserting a comb tooth portion in the insulating substrate material, a step of separating the metal thin plate material leaving the comb tooth portion implanted in the insulating substrate material after cooling, and the insulating substrate material A method for manufacturing an insulating substrate having a through conductor including a step of exposing a comb tooth portion and polishing the surface of the through conductor is presented. By this method, a comb tooth portion formed on a thin metal plate is bent and inserted into the insulating substrate material. An insulating substrate having a through conductor is provided. Here, the comb-teeth portion obtains a through conductor exposed by polishing, but if necessary, a wiring component having a through conductor is manufactured through a processing step for obtaining an electrode or a desired electrical component. In addition, by providing a plurality of comb-tooth portions on the metal thin plate material, it becomes possible to perform batch processing of the manufacturing process, which helps to homogenize and mass-produce the finished product and reduce the cost. That is, in the first step, a metal thin plate material prepared according to the purpose is partially cut or thinned by a process such as etching to form a comb tooth portion having a desired pitch interval or wire diameter. Then, fold the comb teeth vertically and make them stand upright to make Kenzan. In the second step, a glass or resin insulating substrate material softened at a high temperature is placed on a large number of comb teeth portions of Kenzan, or conversely, the comb teeth portions are placed on a soft insulating substrate material. And after both arrangement | positioning arrangement | positioning, a comb-tooth part is pushed in into the insulating board | substrate material of a softened state, and is penetrated. In the third step, after cooling, the metal thin plate material is cut and removed, and both surfaces of the insulating substrate material are polished to expose the protrusions present on the surface and the comb teeth hidden in the insulating substrate material so that the surface is processed flush. To process. In this way, a wiring component is obtained having a through conductor in which the comb-teeth portion of the metal thin plate material is embedded in the insulating substrate and a through conductor having a conductor electrode around it if necessary.
本発明によれば、厚さ500μm以下の金属薄板材が用意され、所定の切り欠きと折り曲げにより貫通導体となる櫛歯部分が作られ、軟化状態の絶縁基板材に貫入装着されるが、好ましくは、貫通孔の位置決め精度は±20μm程度、ビア径は100μm以下、さらに、ビアピッチは150μm以下にされる。この貫入装着は櫛歯部分が金属薄板材と一体化され自立状態で正確な位置決めと保持ができる。ここで、金属薄板材は抜きしろ形状と折り曲げ加工の際、平面部を2段階的のエッチングで最終的に絶縁基板の片面に平面的なパッドや配線等を設けて電気配線部品にすることができ、例えば、接続用パッド付き絶縁基板のほかにコイルやヒーターなどの配線部品となり、電気配線用の電極部やリード部を貫通導体と同時に形成する配線部品が提供される。また、このような配線部品を用いてマイクロリアクターを提供することができる。なお、貫通導体を有する絶縁基板は、その用途に応じて求められる気密性、耐熱性、耐候性を考慮して材料選択され、例えば、絶縁基板部材には、高温で軟化する性質を有するガラスまたは樹脂が絶縁材料として選ばれる。 According to the present invention, a metal thin plate material having a thickness of 500 μm or less is prepared, and a comb-teeth portion that becomes a through conductor is formed by a predetermined notch and bending, and is inserted into and attached to a softened insulating substrate material. The positioning accuracy of the through holes is about ± 20 μm, the via diameter is 100 μm or less, and the via pitch is 150 μm or less. In this penetration mounting, the comb-tooth portion is integrated with the metal thin plate material, and accurate positioning and holding can be performed in a self-supporting state. Here, the metal thin plate material can be formed into an electrical wiring component by forming a flat pad or wiring on one side of the insulating substrate by two-step etching of the flat portion at the time of drawing and bending. For example, in addition to an insulating substrate with a connection pad, a wiring component such as a coil or a heater is provided, and a wiring component in which an electrode portion and a lead portion for electric wiring are formed simultaneously with a through conductor is provided. Moreover, a microreactor can be provided using such wiring components. The insulating substrate having a through conductor is selected in consideration of airtightness, heat resistance, and weather resistance required according to the application. For example, the insulating substrate member may be made of glass having a property of softening at high temperature or Resin is selected as the insulating material.
本発明の別の観点によれば、ステンシル状に孔設した金属薄板材フレームから櫛歯部分を折り曲げ、その直立先端を絶縁基板材に当接させるよう、フレームの上部または下部に絶縁基板材を配置し、高温軟化状態の絶縁基板材に櫛歯部分を貫入させ、その後、フレームの不要部分を切断除去して研磨して貫通導体付き絶縁基板にする。ここで、フレームは厚さが500μm以下であり、使用する絶縁基板材の熱膨張係数に近い熱膨張係数の金属材と組合せる。また、金属薄板材の孔設には、エッチング、パンチング、サンドブラスト、レーザーカット、放電加工のいずれかの処理方法が適用されるが、その際の処理方法に応じて、所望する貫通導体の断面形状が決定される。このうち、4辺が内側に凹んだ略六角形である場合、2辺が内側に凹んだ略台形である場合、隣り合う2つの頂角は丸みを有し残りの他の2つの頂角にバリ状突起を有する略四角形である場合、および角部に丸みを有する略台形または略四角形である場合の何れかであるのが好ましい。これらの好ましい断面形状は、貫通導体の断面形状の丸めや滑らかな曲線はエッチングまたはサンドブラストの加工処理で得られることが判明した。 According to another aspect of the present invention, an insulating substrate material is formed on the upper or lower portion of the frame so that the comb-teeth portion is bent from the thin metal plate frame formed in a stencil shape and the upright tip is brought into contact with the insulating substrate material. The comb-teeth portion is inserted into the insulating substrate material in a softened state at a high temperature, and then the unnecessary portion of the frame is cut off and polished to form an insulating substrate with a through conductor. Here, the frame has a thickness of 500 μm or less and is combined with a metal material having a thermal expansion coefficient close to that of the insulating substrate material to be used. In addition, any of the processing methods of etching, punching, sand blasting, laser cutting, and electric discharge machining is applied to the drilling of the metal thin plate material, but depending on the processing method at that time, the desired cross-sectional shape of the through conductor Is determined. Among these, when it is a substantially hexagonal shape in which four sides are recessed inward, and when it is a substantially trapezoidal shape in which two sides are recessed inwardly, two adjacent apex angles are rounded and the other two apex angles are It is preferable that the shape is either a substantially square shape having burr-like protrusions, or a substantially trapezoidal shape or a substantially square shape having rounded corners. As for these preferable cross-sectional shapes, it has been found that rounding of the cross-sectional shape of the through conductors and smooth curves can be obtained by etching or sandblast processing.
一方、本発明に係る配線部品は、金属薄板材の厚みを500μm以下とすることに加えて、櫛歯部分を絶縁基板の貫通導体とする際に、櫛歯の直径を100μm以下、その中心線間のピッチ間隔を150μm以下にし、かつ取り付け位置の精度を±20μm程度にすることでその適用分野を拡大することができる。例えば、MEMS(Micro Electro Mechanical Systems)デバイスの気密封止に使用できるほか、CSP(Chip Size Package)半導体デバイスのインターポーザにアンダーフィル樹脂を用いずに使用することがでる。また、本発明の貫通導体付き絶縁基板を応用したマイクロリアクター装置では、微少反応素子やバイオ素子等にも応用でき、それぞれの用途に応じて何れかの製造方法が選択できる。さらに、金属薄板材から直角に折曲した櫛歯部分を切断する際に、櫛歯部分に金属薄板材の一部を平面部分とすることで電気配線に利用し、この配線部分を接続パッド、コイル、ヒーターなどの配線部品とする。 On the other hand, in the wiring component according to the present invention, in addition to setting the thickness of the thin metal plate material to 500 μm or less, the comb tooth diameter is set to 100 μm or less and the center line when the comb tooth portion is used as a through conductor of the insulating substrate. The application field can be expanded by setting the pitch interval to 150 μm or less and the accuracy of the mounting position to about ± 20 μm. For example, it can be used for hermetic sealing of MEMS (Micro Electro Mechanical Systems) devices, and can be used without using an underfill resin for an interposer of a CSP (Chip Size Package) semiconductor device. In addition, the microreactor apparatus to which the insulating substrate with through conductor of the present invention is applied can be applied to a microreaction element, a bioelement, and the like, and any manufacturing method can be selected according to each use. Furthermore, when cutting a comb tooth portion bent at a right angle from a metal thin plate material, a part of the metal thin plate material is used as a flat portion in the comb tooth portion, and this wiring portion is used as a connection pad, Wiring parts such as coils and heaters.
本発明の貫通導体を有する絶縁基板は、金属薄板材の切り抜きと折り曲げによる櫛歯部分を利用して軟化状態の絶縁基板材に貫通挿入して貫通導体とするので櫛歯部分が連結して互いに支え合い、微細加工処理を容易にすると共に微細化と精度の向上を図る。また、金属薄板材の切り抜きで抜きしろが生じ、直角に起立させる折り曲げ工程を含むことで、微細化処理を高精度で実現する。特に、貫通導体の埋設と同時に電気配線用に金属薄板を利用することで回路部品に利用でき配線部品としての使用を可能にする。更に、金属薄板材のサブ部分を貫通導体の保持機能に活用することで導電体の微細化と位置決め精度を高め、かつ作業性の改善からコスト低減化が図れる。また、貫通導体として金属薄板を使用するため、少ない材料で抵抗値の低い貫通導体を有する絶縁基板を、比較的低い製造コストで作製することが可能となる。また、金属薄板に櫛刃状部分の形成にフォトリソグラフィを用いたパターンエッチングを行なうことにより、100μm以下の導電体を150μm以下のピッチで微細処理を容易にすることができる。 The insulating substrate having a through conductor according to the present invention is formed by penetrating and inserting into a soft insulating substrate material using a comb tooth portion formed by cutting and bending a thin metal plate material. Supporting each other, facilitating fine processing and miniaturization and improving accuracy. Further, by including a bending process in which a margin for cutting out is generated by cutting out the thin metal plate material and standing at a right angle, the miniaturization process is realized with high accuracy. In particular, by using a thin metal plate for electrical wiring at the same time as embedding the through conductor, it can be used for a circuit component and can be used as a wiring component. Furthermore, by utilizing the sub-part of the thin metal plate material for the holding function of the through conductor, the conductor can be miniaturized and the positioning accuracy can be improved, and the cost can be reduced by improving the workability. In addition, since a thin metal plate is used as the through conductor, an insulating substrate having a through conductor with a low resistance value and a small amount of material can be manufactured at a relatively low manufacturing cost. Further, by performing pattern etching using photolithography to form a comb blade portion on a thin metal plate, it is possible to facilitate fine processing of a conductor of 100 μm or less at a pitch of 150 μm or less.
本発明の第一の実施態様は、図1に示すように、金属薄板材を部分的に切り欠いた櫛歯部分を形成し、この櫛歯部分を折り曲げて直立させ、直立先端を高温軟化状態の絶縁基板材に当接し貫入させた後、前記櫛歯部分を残して前記金属薄板材を除去し、前記絶縁基板材の表面を研磨してなる貫通導体を有する絶縁基板である。図2および図3に示すように、先ず、金属薄板材11、21の一部を切り抜き、または打ち抜き等の加工により、櫛歯部分12をステンシル状に孔設する。次いで、この櫛歯部分12の歯部13、23を垂直に折り曲げ加工する。次に、図3(c)に示す様に、金属薄板材11、21に絶縁基板材24を載置する。この場合、逆に絶縁基板材の上に金属薄板材を乗せてもよい。この組立状態で、電気炉などの炉中で高温加熱し、軟化状態の絶縁基板材の中に金属薄板材11、21の歯部13、23を、図3(d)に示す様に貫入させる。その際、必要に応じて錘などにより貫入のための力を加える。次いで、両部材を高温状態から常温に冷却後、上下の面を研磨し、金属薄板材から櫛歯部分を切り欠きその一部を貫通導体15、25とする。貫通導体を有する絶縁基板10、20はこのような一連の工程により作製される。
In the first embodiment of the present invention, as shown in FIG. 1, a comb tooth portion is formed by partially cutting a thin metal plate material, the comb tooth portion is bent to stand upright, and the upstanding tip is softened at high temperature. This is an insulating substrate having a through conductor formed by abutting and penetrating the insulating substrate material, removing the metal thin plate material leaving the comb teeth and polishing the surface of the insulating substrate material. As shown in FIGS. 2 and 3, first, the comb-
金属薄板材や絶縁基板材の平面形状は任意に選択され、シリコンウエハと重ねて用いる貫通導体付き絶縁基板では、金属薄板や絶縁材料板の平面形状は円形またはオリフラ(オリエンテーションフラット)やノッチを付加した円形とする。このうち、金属薄板材は高温処理に耐えて所望の電気抵抗率や熱膨張係数を有する材料が選ばれ、銅、銅系合金、鉄、鉄系合金、鉄ニッケル系合金、アルミニウム、アルミニウム系合金、タングステン、タングステン系合金、モリブデン、モリブデン系合金、ステンレス系合金、金、金系合金、白金、白金系合金等からなる金属が使用される。必要に応じて、特定の金属板に別の金属をめっきした材料も使用できる。この場合のめっき処理は、金属薄板材の切り抜き工程の前後のいずれかで行えば良い。しかし、金属薄板材の厚さは、切り抜き後に垂直な曲げ加工が出来るようにするため、実用上500μm以下に選ばれる。また、櫛歯部分の櫛歯は直径が100μm以下、その中心線間のピッチ間隔が150μm以下で、かつ、取付位置の精度を±20μm程度に設定される。 The planar shape of the metal thin plate material or insulating substrate material is selected arbitrarily. In the case of an insulating substrate with through conductors used to overlap with the silicon wafer, the planar shape of the metal thin plate or insulating material plate is circular or orientation flat (orientation flat) or notch is added. A round shape. Of these, the metal sheet material is selected from materials that can withstand high-temperature processing and have a desired electrical resistivity and thermal expansion coefficient. Copper, copper alloy, iron, iron alloy, iron nickel alloy, aluminum, aluminum alloy , Tungsten, a tungsten alloy, molybdenum, a molybdenum alloy, a stainless alloy, gold, a gold alloy, platinum, a platinum alloy, or the like is used. If necessary, a material obtained by plating a specific metal plate with another metal can also be used. The plating process in this case may be performed either before or after the metal sheet cutting process. However, the thickness of the thin metal plate material is practically selected to be 500 μm or less in order to enable vertical bending after the cutting. Further, the comb teeth of the comb teeth portion are set to have a diameter of 100 μm or less, a pitch interval between the center lines thereof is 150 μm or less, and the accuracy of the mounting position is set to about ± 20 μm.
金属薄板材の切り抜きや打ち抜きは、エッチング、パンチング、サンドブラスト、レーザーカット、放電加工が利用され、金属ステンシル状の穴部を孔設する。その際、採用した加工方法によって、貫通導体作製後の電極の断面形状は、上記の金属フレーム加工方法の特徴を示す形状となる。例えば、図4(a)に示すように、エッチングでは、略六角形の4辺が内側に凹んだ形状30または略台形の2辺が内側に凹んだ形状31、パンチングでは、略四角形の頂角一対に丸みを持ち、残りの頂角にバリ状の突起がある形状32、サンドブラストでは略台形形状33、レーザーカットおよび放電加工では略四角形で角部は溶融して丸みを持った形状34となっている。ここで、図4(b)に示す様に、同図(a)で示した各電極の断面形状の角張った部分をエッチングまたはサンドブラストにより丸め、滑らかな曲線形状に整えた電極部材とすることもできる。このエッチングは金属薄板を切り抜き加工した後、または折り曲げ加工した後に行なう。このように孔設加工時のバリ等の尖端部分を無くすことで、軟化状態の絶縁基板材に電極を貫入する際の気泡防止や電極間の耐電圧を向上させることができる。
For the cutting and punching of the metal thin plate material, etching, punching, sand blasting, laser cutting, and electric discharge machining are used to form a metal stencil-shaped hole. At that time, depending on the employed processing method, the cross-sectional shape of the electrode after fabrication of the through conductor becomes a shape showing the characteristics of the metal frame processing method. For example, as shown in FIG. 4A, in etching, a substantially hexagonal shape with four sides recessed inward 30 or a substantially trapezoidal shape with two sides recessed inward 31, with punching, a substantially rectangular apex
図5に示す様に、金属薄板の中で曲げ加工を行なわない部分について、その一部分をフォトエッチングにより除去し、残った部分を、図5(g)に示す様に電気配線や接続パッドとして利用することができる。より詳しくは、絶縁基板材44の中に金属薄板材41の櫛歯部分43を図5(d)の様に貫入させた後に、図5(e)に示すように金属薄板材41の露出面46にフォトレジスト47を塗布またはレジストフィルムにより張り合せ、フォトリソグラフィにより必要なパターンに切り抜いた後に金属薄板材41の露出部分をエッチングすることにより、必要な電気配線や接続パッド48を残した図5(f)に示す構造の貫通導体付き絶縁基板が得られる。この後、絶縁材料板44を研磨して、図5(g)に示す所望の厚さの貫通導体を有する絶縁基板とする。
As shown in FIG. 5, a portion of the thin metal plate that is not bent is removed by photoetching, and the remaining portion is used as an electrical wiring or connection pad as shown in FIG. 5 (g). can do. More specifically, after the comb-
図6は本発明の別の実施態様であり、金属薄板材51をエッチング処理して部分的に切り欠いた櫛歯部分と部分的に薄くした接続部分とを形成し、櫛歯部分53を折り曲げて直立させてその先端を高温軟化状態の絶縁基板材54に当接貫入し、金属薄板材を櫛歯部分と接続部分とを残して切り離し、絶縁基板材の表面を研磨して櫛歯部分を貫通導体55に、接続部分を配線材58にした貫通導体を有する配線部品である。ここで、金属薄板材の櫛歯部分は貫通導体55であり、接続部分は櫛歯部分と連結するハーフエッチングされた配線材58であり、この配線材58が電極パッド、コイル、ヒーター等の電気回路部品に適応される。すなわち、金属薄板材に曲げ加工を行なわない接続部分について、その一部分の厚さをエッチングなどで減じ、後の研磨工程において厚さを減じた部分のみを除去して残った部分を、図6(d)に示す様に電気配線や接続パッドとして利用できる。また、図7に示す様に、上記貫通導体63を絶縁基板材64の厚みの途中まで形成し、絶縁材料の一部をエッチングやサンドブラストなどで除去し、キャビティ69を設けた貫通導体を有する絶縁基板60とすることもできる。
FIG. 6 shows another embodiment of the present invention, in which a
一方、絶縁基板材はガラス、セラミックおよび樹脂等が選ばれ、金属薄板材との熱膨張係数の差が小さくなるように選定する。ガラスは気密性や耐熱性が要請される場合に用い、その板厚は最終的な貫通導体を有する絶縁基板に要求される厚さに金属薄板の厚さを加えた厚さ以上にして用いる。貫通導体にシリコン製機能デバイスを接合配置して、金属または絶縁キャップを封着して気密封止パッケージとした電子配線部品とすることもできる。 On the other hand, glass, ceramic, resin, etc. are selected as the insulating substrate material, and the insulating substrate material is selected so that the difference in thermal expansion coefficient from the metal thin plate material becomes small. Glass is used when airtightness and heat resistance are required, and the thickness of the glass is more than the thickness required for the final insulating substrate plus the thickness of the thin metal plate. It is also possible to provide an electronic wiring component in which a silicon functional device is bonded to the through conductor and a metal or an insulating cap is sealed to form an airtight sealed package.
本発明に係る貫通導体を有する絶縁基板は、これを図8および図9に示す様に電気配線部分をコイル部78,88として、その両端部73,83を折り曲げて、高温軟化状態の絶縁材料74,84に当接貫入させ、金属薄板材の厚さを減じた部分のみを研磨工程で除去して残った部分に、新たに絶縁基板材79を接着または融着することによりコイル部78を封入した貫通導体付きコイル部品70を得る。また、図10に示す様に、電気配線部分を耐熱性金属にしてヒーター部98を形成し、その両端部93を折り曲げ、貫通導体付きヒーター部品90とする。さらに、図11に示す様に上記貫通導体付き絶縁基板の電気配線側に新たな絶縁基板材109を接着または融着することにより、電気配線のヒーター部108を密閉した貫通導体付きヒーター部品100が得られる。上記貫通導体付きヒーター部品100のヒーター側に、さらにキャビティ部を設けた新たな絶縁基板材119を接着または融着して、図12に示す様な貫通導体付きヒーター容器110にできる。この貫通導体付きヒーター容器110は、マイクロリアクター装置に応用できる。
As shown in FIGS. 8 and 9, the insulating substrate having the through conductor according to the present invention has the electrical wiring portions as the
以下、貫通導体付き絶縁基板の製造方法に関して、図1から図3を参照して第1の実施例について記述する。先ず、厚さ100μm、平均熱膨張係数5.0×10−6/Kの42合金からなる金属薄板材11の一部にフォトエッチング抜き加工によって、図2(a)、図3(a)に示した櫛状孔12を孔設した。1本の櫛状部分の寸法は幅およそ0.1mm、長さおよそ1.0mmである。次いで、金型(図示せず)を用いて上記の櫛状の部を図2(b)、図3(b)の様に、垂直に折り曲げた。さらに、図3(c)に示す様に、この金属薄板材21に厚さ1.1mm、軟化点557℃、平均熱膨張係数7.2×10−6/Kのホウケイ酸ガラス24を乗せ、電気炉中で高温にし、軟らかくなったホウケイ酸ガラス24の中に金属薄板材21の櫛歯部分23を、図3(d)の様に貫入させた。この際、重り(図示せず)により貫入のための力を加えた。最後に、部材を高温状態から冷却し、取り出し後、上下の面を研磨し、金属薄板材21の櫛歯部分23を貫通導体とした図3(c)、図3(e)に示す様な貫通導体付き絶縁基板20を作製した。このときの金属薄板材21の櫛歯部分23の断面形状は図4(a)の31に示す形状であった。
Hereinafter, a first embodiment will be described with reference to FIGS. 1 to 3 regarding a method of manufacturing an insulating substrate with through conductors. First, a part of a
なお、本発明に関する実施態様は次のとおり明記される。すなわち、(1)金属薄板材を部分的に切り欠く櫛歯部分を形成した後、この櫛歯部分を折り曲げて直立する工程、前記櫛歯部分の直立先端を高温軟化状態の絶縁基板材と重ねて前記絶縁基板材に前記櫛歯部分を挿入する工程、常温に冷却後前記櫛歯部分を前記金属薄板材から切り離して絶縁基板材に貫通導体として植設する工程、および前記絶縁基板材と貫通導体の端面を面一にする両面研磨工程を含む貫通導体を有する絶縁基板の製造方法、
(2)前記金属薄板材に施す前記櫛歯部分の形成方法が、エッチング、パンチング、サンドブラスト、レーザーカット、放電加工の群から選ばれる何れかの孔設法であることを特徴とする貫通導体を有する絶縁基板の製造方法、(3)前記櫛歯部分を前記パンチング、前記サンドブラスト、前記レーザーカット、前記放電加工で成形後、さらに前記櫛歯部分の角張った部分をエッチングまたはサンドブラストにより丸め、前記貫通導体の断面形状を滑らかな曲線形状とすることを特徴とする貫通導体を有する絶縁基板の製造方法、(4)前記金属薄板材の櫛歯部分を前記絶縁基板材中に貫入させた後、前記金属薄板材の中で曲げ加工を行なわない部分について、フォトエッチングにてその一部分をパターン状に除去し、残った部分を電気配線や接続パッドとすることを特徴とする貫通導体を有する絶縁基板の製造方法、(5)前記貫通導体を前記絶縁基板材の厚みの途中まで形成し、前記絶縁基板材の一部を除去してキャビティを形成したことを特徴とする貫通導体を有する絶縁基板の製造方法、(6)前記金属薄板材は、厚さが500μm以下であり、前記絶縁基板材は、ガラスまたは樹脂からなり、前記金属薄板材と前記絶縁基板材の熱膨張係数を近い組合せとしたことを特徴とする方法によって製作された貫通導体を有する絶縁基板、(7)前記貫通導体の断面形状が、略六角形でその中の4辺が内側に凹んだ形状、または略台形でその中の2辺が内側に凹んだ形状、略四角形で隣り合う2つの頂角は丸みを持ち他の2つの頂角にはバリ状の突起がある形状、略台形形状または略四角形で角部に丸みを有する形状の何れかであることを特徴とする方法によって製作された貫通導体を有する絶縁基板、(8)前記貫通導体の断面形状を滑らかな曲線形状としたことを特徴とする方法によって製作された貫通導体を有する絶縁基板、(9)前述の方法によって製作された前記電気配線や前記接続パッド備えたことを特徴とする貫通導体を有する絶縁基板、(10)前述の方法によって製作されたキャビティを備えたことを特徴とする、貫通導体を有する絶縁基板、(11)前述の貫通導体を有する絶縁基板を使用した、電気電子部品の気密封止用パッケージ、(12)前記電気配線部分をコイル状とし、その両端に折り曲げによる貫通導体を配置した貫通導体を有するコイル部品、(13)前記電気配線部分を耐熱性金属で作製してヒーター部材とし、その両端に折り曲げによる貫通導体を配置した貫通導体を有するヒーター部材、(14)前述の貫通導体を有する絶縁基板の電気配線側に、さらに絶縁部材を接着または融着することによって、電気配線を密閉した貫通導体を有する絶縁基板、(15)前述の貫通導体を有するヒーター部材のヒーター側に、さらに絶縁部材を接着または融着することによって、ヒーターを密閉した貫通導体を有するヒーター部材、および(16)前述のヒーター部材を用いたマイクロリアクター装置。
In addition, the embodiment regarding this invention is specified as follows. That is, (1) a step of forming a comb tooth part by partially cutting out the metal thin plate material, and then bending the comb tooth part to stand upright, and stacking the upright tip of the comb tooth part on the insulating substrate material in a high temperature softened state Inserting the comb-tooth portion into the insulating substrate material, separating the comb-tooth portion from the thin metal plate material after cooling to room temperature, and implanting the insulating substrate material as a through conductor, and penetrating the insulating substrate material. A method of manufacturing an insulating substrate having a through conductor including a double-side polishing step in which end faces of the conductor are flush with each other;
(2) The through-conductor is characterized in that the method of forming the comb-teeth portion applied to the metal sheet material is any one of hole forming methods selected from the group of etching, punching, sandblasting, laser cutting, and electric discharge machining. (3) After forming the comb-tooth portion by punching, sandblasting, laser cutting, and electric discharge machining, and further rounding the angular portion of the comb-tooth portion by etching or sandblasting, and passing through the conductor (4) After inserting the comb-tooth part of the said metal thin plate material in the said insulating board | substrate material, the cross-sectional shape of this is made into a smooth curve shape, The part of the sheet material that is not bent is partially removed by photoetching, and the remaining part is electrically wired. (5) forming the through-conductor to the middle of the thickness of the insulating substrate material, removing a part of the insulating substrate material, and forming a cavity; (6) The metal thin plate material has a thickness of 500 μm or less, the insulating substrate material is made of glass or resin, and the metal thin plate material is characterized in that An insulating substrate having a through conductor manufactured by a method characterized in that the thermal expansion coefficients of the plate material and the insulating substrate material are close combinations, and (7) the through conductor has a substantially hexagonal cross-sectional shape therein. Four sides are recessed inward, or a trapezoidal shape with two sides recessed inward. The two adjacent apex angles are rounded, and the other two apex angles are rounded. There is a shape, a substantially trapezoidal shape or An insulating substrate having a through conductor manufactured by a method having a substantially quadrangular shape and rounded corners; and (8) the cross-sectional shape of the through conductor is a smooth curved shape. An insulating substrate having a through conductor manufactured by the method described above, (9) an insulating substrate having a through conductor provided by the electrical wiring and the connection pad manufactured by the method described above, and (10) the above described (11) A package for hermetic sealing of electrical and electronic parts using the insulating substrate having the above-mentioned through conductor, characterized by comprising a cavity manufactured by the method of (12) A coil component having a through conductor in which the electric wiring portion is formed in a coil shape and bent through conductors are arranged at both ends thereof; and (13) the electric wiring portion is made of a heat-resistant metal. A heater member produced and used as a heater member, and having a through conductor in which through conductors are bent at both ends thereof. (14) An insulating member is further bonded or fused to the electric wiring side of the insulating substrate having the above-described through conductor. An insulating substrate having a through conductor in which electrical wiring is sealed, and (15) a through conductor in which the heater is sealed by further bonding or fusing an insulating member to the heater side of the heater member having the above-described through conductor. And (16) a microreactor device using the above-described heater member.
本発明の貫通導体付き絶縁基板は、各種電子デバイスのパッケージに気密シール部材として利用できる。MEMSデバイスの気密封止、およびCSP半導体デバイスのインターポーザにアンダーフィル樹脂を用いずに利用できる。また、本発明の貫通導体付絶縁基板を応用したマイクロリアクター装置は、微少反応素子やバイオ素子等にも応用できる。 The insulating substrate with a through conductor of the present invention can be used as an airtight seal member for various electronic device packages. It can be used without using an underfill resin for hermetic sealing of MEMS devices and interposers of CSP semiconductor devices. Moreover, the microreactor apparatus to which the insulating substrate with through conductor of the present invention is applied can be applied to a microreaction element, a bioelement, and the like.
10、20、40・・・貫通導体を有する絶縁基板、
11、21、41・・・金属薄板材、
12、52、62、72、92・・・櫛歯部分(切り欠き部)、
13、23、43、53、63・・・櫛歯部分(歯部)、
73、83、93・・・櫛歯部分(両端部)、
14、24、44、54、64、74、84、94、104・・・絶縁基板材、
15、25、45、55、65、75、85、95、105、115・・・貫通導体
(櫛歯)、 30〜39・・・各種櫛歯の断面形状、
58・・・配線材、 69・・・キャビティ、
70・・・コイル部品、 78、88・・・コイル部、
90、100・・・ヒーター部品、 98、108、118・・・ヒーター部、
79、109、119・・・新たな絶縁基板材、
110・・・貫通導体付きヒーター容器(マイクロリアクター)、
111・・・反応容器、 112・・・開口。
10, 20, 40 ... Insulating substrate having through conductors,
11, 21, 41 ... thin metal plate material,
12, 52, 62, 72, 92 ... comb teeth (notch),
13, 23, 43, 53, 63 ... comb tooth part (tooth part),
73, 83, 93 ... comb teeth (both ends),
14, 24, 44, 54, 64, 74, 84, 94, 104 ... insulating substrate material,
15, 25, 45, 55, 65, 75, 85, 95, 105, 115 ... penetrating conductors (comb teeth), 30 to 39 ... cross-sectional shapes of various comb teeth,
58 ... wiring material, 69 ... cavity,
70 ... Coil parts, 78, 88 ... Coil part,
90, 100 ... heater parts, 98, 108, 118 ... heater parts,
79, 109, 119 ... New insulating substrate material,
110 ... heater vessel with through conductor (microreactor),
111 ... reaction vessel, 112 ... opening.
Claims (10)
After the comb-teeth portion of the metal thin plate material is penetrated into the insulating substrate material, a portion that is not bent at the connection portion of the metal thin plate material is partially removed by photoetching, and the remaining portion is used as a wiring material. A method of manufacturing a wiring component having a through conductor according to claim 9.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5944774A (en) * | 1982-09-08 | 1984-03-13 | ソニー株式会社 | Connecting pin |
JPH04367330A (en) * | 1991-06-11 | 1992-12-18 | Hiroshi Saito | Method and device for press working |
JPH06302344A (en) * | 1993-04-14 | 1994-10-28 | Nec Kansai Ltd | Terminal fitting structure for printed circuit board |
JPH07273420A (en) * | 1994-03-29 | 1995-10-20 | Hitachi Ltd | High-integration semiconductor device and semiconductor module using the same |
JP2001160678A (en) * | 1999-12-01 | 2001-06-12 | Hoya Corp | Method of manufacturing front-to-backside conduction board and method of manufacturing semiconductor mounting board |
-
2010
- 2010-04-21 JP JP2010097792A patent/JP5429816B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5944774A (en) * | 1982-09-08 | 1984-03-13 | ソニー株式会社 | Connecting pin |
JPH04367330A (en) * | 1991-06-11 | 1992-12-18 | Hiroshi Saito | Method and device for press working |
JPH06302344A (en) * | 1993-04-14 | 1994-10-28 | Nec Kansai Ltd | Terminal fitting structure for printed circuit board |
JPH07273420A (en) * | 1994-03-29 | 1995-10-20 | Hitachi Ltd | High-integration semiconductor device and semiconductor module using the same |
JP2001160678A (en) * | 1999-12-01 | 2001-06-12 | Hoya Corp | Method of manufacturing front-to-backside conduction board and method of manufacturing semiconductor mounting board |
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