JP2011210787A - Method for manufacturing light emitting-diode unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a light emitting diode unit, capable of manufacturing the light emitting diode unit having an LED chip on a package substrate sealed with a glass material in a short time, while preventing the deterioration and breakage of each member.SOLUTION: An emission surface of an LED chip placed on a package substrate is sealed with a glass material by solidifying a melted glass droplet. The package substrate has an air vent for releasing air interposed between the melted glass droplet and the package substrate.

Description

  The present invention relates to a method for manufacturing a light emitting diode unit, and more particularly, to a method for manufacturing a light emitting diode unit including a step of sealing an LED chip disposed on a package substrate with a glass body.

  A light emitting diode unit in which an LED chip is arranged on a package substrate has excellent features such as low power consumption, small size and light weight, little heat generation, mercury free, and easy adjustment of light quantity. Above all, white light emitting diode units that emit white light by combining LED chips that emit blue light, blue-violet light, near-ultraviolet light, and the like with phosphors replace incandescent bulbs, fluorescent lamps, high-pressure discharge lamps, etc. It is expected as a possible next-generation energy-saving illumination light source.

  However, gallium nitride-based substrates that are mainly used as LED chip materials that emit blue light and the like have a high refractive index. Therefore, if the surface of the LED chip is in contact with an air layer or the like, light extraction efficiency is achieved by total reflection. There is a problem that will be extremely lowered.

  On the other hand, the light emitting diode unit of the structure which sealed the LED chip with resin materials, such as an epoxy resin and a silicone resin, is proposed (refer patent documents 1-3). In the light emitting diode units described in Patent Documents 1 to 3, since the LED chip is sealed with a resin material, total reflection on the surface of the LED chip is suppressed, and it is considered that a decrease in light extraction efficiency can be suppressed. . However, such a resin material is prone to deterioration such as coloring due to the light from the LED chip and the influence of heat from the LED chip and the phosphor, and can be durable enough to withstand long-term use. There is a problem that you can not. In particular, when the brightness per unit area is required, such as an LED for a headlight of an automobile, or when an LED chip that emits near-ultraviolet light is used to obtain white light with high color rendering properties, the LED chip Deterioration of the resin material that seals the surface is significant and becomes a problem.

  For such a problem, a method of forming a hemisphere by placing glass sheets above and below an LED chip covered with an insulating layer mixed with a phosphor and press-pressing under a predetermined temperature. Has been proposed (see Patent Document 4).

JP 2002-185046 A JP 2002-314142 A JP 2005-93681 A JP 200654210 A

  However, in the method described in Patent Document 4, in order to form a glass sheet into a hemisphere, an LED chip, a phosphor, a package substrate, and the like are placed under a high temperature and a high pressure for a long time. There is a problem that deterioration and breakage of members are inevitable. Further, in order to form the glass sheet into a hemispherical shape, it is necessary to heat and cool these members as a whole, so that a long time is required for the process, resulting in an increase in cost.

  Such a problem is common not only when manufacturing a light emitting diode unit that emits white light, but also when manufacturing a light emitting diode unit having a configuration in which an LED chip disposed on a package substrate is sealed with a glass body. It is a problem that occurs.

  The present invention has been made in view of the above technical problems, and an object of the present invention is to provide a light emitting diode unit having a configuration in which an LED chip arranged on a package substrate is sealed with a glass body. An object of the present invention is to provide a method of manufacturing a light emitting diode unit that can be manufactured in a short time while suppressing deterioration and breakage of members.

  In order to solve the above problems, the present invention has the following features.

1. An LED chip that emits light of a predetermined wavelength from a light emitting surface, a package substrate on which the LED chip is placed, and a glass body that seals the light emitting surface, and a manufacturing method of a light emitting diode unit,
A sealing step of sealing the light emitting surface of the LED chip placed on the package substrate with the glass body by solidifying molten glass droplets;
The method for manufacturing a light-emitting diode unit, wherein the package substrate includes an air vent for releasing air interposed between the molten glass droplet and the package substrate.

  2. 2. The method of manufacturing a light emitting diode unit according to 1, wherein the air vent part has a groove surrounding the LED chip.

  3. 2. The method of manufacturing a light emitting diode unit according to 1, wherein the air vent has a vertical hole from a surface on the side of the package substrate on which the LED chip is placed to an opposite surface.

  4). 4. The method of manufacturing a light emitting diode unit according to 3 above, wherein the vertical hole has a shape in which an inner dimension expands from a surface on the side on which the LED chip is placed toward an opposite surface.

5. The air vent has a groove surrounding the LED chip, and a vertical hole from the surface of the package substrate on the side where the LED chip is placed to the opposite surface,
2. The method for manufacturing a light-emitting diode unit according to 1 above, wherein the vertical hole is connected to the groove.

  6). 6. The method for manufacturing a light-emitting diode unit according to any one of 3 to 5, wherein the vertical hole passes therethrough.

  7). 7. The method of manufacturing a light emitting diode unit according to any one of claims 1 to 6, wherein the air vent part has a lateral hole extending from the inside to the outside where the LED chip of the package substrate is placed.

8). The air vent has a groove surrounding the LED chip and a lateral hole from the inside to the outside where the LED chip of the package substrate is placed,
2. The method for manufacturing a light-emitting diode unit according to 1 above, wherein the lateral hole is connected to the groove.

9. The air vent includes a vertical hole from the surface of the package substrate on the side where the LED chip is placed to the opposite surface, and a lateral hole from the inside to the outside of the package substrate on which the LED chip is placed. Have
2. The method for manufacturing a light-emitting diode unit according to 1 above, wherein the horizontal hole is connected to the vertical hole.

  10. 10. The method for manufacturing a light-emitting diode unit according to any one of 7 to 9, wherein the horizontal hole passes therethrough.

  11. In the sealing step, the molten glass droplet having a temperature higher than that of the package substrate is dropped and solidified on the package substrate on which the LED chip is placed, thereby sealing the light emitting surface with the glass body. 11. The method for manufacturing a light emitting diode unit according to any one of 1 to 10, wherein the method is stopped.

  12 In the sealing step, the molten glass droplet is pressurized with the package substrate and the upper mold before the dropped molten glass droplet is solidified, and the glass body is formed into a predetermined shape. The manufacturing method of the light emitting diode unit of 11.

  13. In the sealing step, the molten glass droplet having a higher temperature than the lower die is dropped on the lower die, the package substrate on which the LED chip is placed is turned upside down, and the molten glass droplet dropped. 11. The light emission according to any one of 1 to 10, wherein the molten glass droplet is pressurized with the package substrate and the lower mold before solidifying the glass body, and the glass body is formed into a predetermined shape. Manufacturing method of the diode unit.

  14 Any of 11 to 13, further comprising a step of supplying a phosphor for converting the wavelength of light emitted from the LED chip to the light emitting surface of the LED chip prior to the sealing step. 2. A method for producing a light emitting diode unit according to item 1.

  15. Any one of said 11-13 characterized by having the process of supplying the fluorescent substance for converting the wavelength of the light inject | emitted from the said LED chip to the surface of the said glass body after the said sealing process. The manufacturing method of the light emitting diode unit of description.

  16. The said fluorescent substance is supplied by apply | coating the composition which disperse | distributed the said fluorescent substance, and heating the apply | coated said composition and forming a fluorescent substance layer, The said 14 or 15 characterized by the above-mentioned. Manufacturing method of light emitting diode unit.

  17. 17. The method for manufacturing a light-emitting diode unit according to 16, wherein the composition contains an inorganic polymer and an organic solvent.

  18. 18. The method for manufacturing a light-emitting diode unit according to 17 above, wherein the inorganic polymer is perhydropolysilazane.

  19. 17. The method for manufacturing a light emitting diode unit according to 16, wherein the composition contains an organosiloxane compound.

  20. 16. The method for manufacturing a light-emitting diode unit according to 14 or 15, wherein the phosphor is supplied by laminating a second glass body having the phosphor.

  21. 21. The method of manufacturing a light emitting diode unit according to the item 20, wherein the second glass body is a kneaded glass in which the phosphor is dispersed.

  22. 21. The method for manufacturing a light-emitting diode unit according to the item 20, wherein the second glass body has a phosphor layer containing the phosphor on at least one surface.

  According to the present invention, since the light emitting surface of the LED chip is sealed with the glass body by solidifying the molten glass droplet, the light emitting surface of the LED chip can be sealed in a very short time. Therefore, members such as LED chips, phosphors, and package substrates are not placed under high temperature and high pressure for a long time, and deterioration and breakage of these members during manufacturing can be suppressed. In addition, since the package substrate includes an air vent for releasing the air interposed between the molten glass droplet and the package substrate, it is possible to suppress the occurrence of air accumulation between the package substrate and the glass body. it can. Therefore, a light emitting diode unit can be manufactured in a short time while suppressing deterioration and breakage of members such as an LED chip, a phosphor, and a package substrate.

It is a schematic diagram which shows the package board | substrate which mounts an LED chip. It is a schematic diagram which shows the package board | substrate which mounts an LED chip. It is a schematic diagram which shows the sealing process in 1st Embodiment in order. It is a schematic diagram of the light emitting diode unit manufactured with the method of 1st Embodiment. It is a schematic diagram of the light emitting diode unit manufactured with the method of 1st Embodiment. It is a schematic diagram which shows the sealing process in 2nd Embodiment in order. It is a schematic diagram of the light emitting diode unit manufactured with the method of 2nd Embodiment. It is a schematic diagram of the light emitting diode unit manufactured with the method of 2nd Embodiment. It is a schematic diagram which shows the sealing process in 3rd Embodiment in order.

  Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 9, but the present invention is not limited to the embodiments.

<First Embodiment>
The manufacturing method of the light emitting diode unit of 1st Embodiment is demonstrated with reference to FIGS. The manufacturing method of the light emitting diode unit according to the present embodiment includes a step of supplying a phosphor for converting the wavelength of light emitted from the LED chip (phosphor supply step), and solidifying the molten glass droplet, thereby providing a package substrate. And a step of sealing the light emitting surface of the LED chip placed on the substrate with a glass body (sealing step). In the sealing step, the light emitting surface is sealed with a glass body by dropping and solidifying a molten glass droplet having a temperature higher than that of the package substrate on the package substrate on which the LED chip is placed. In the phosphor supplying step, the phosphor may be supplied to the light emitting surface of the LED chip prior to the sealing step, or the phosphor may be supplied to the surface of the glass body formed by the sealing step. . Also, a case of manufacturing a light emitting diode unit that emits white light using a phosphor that converts the wavelength of light emitted from an LED chip will be described as an example, but a light emitting diode unit that does not use a phosphor is manufactured. In some cases, the phosphor supply step is unnecessary.

  1 and 2 are schematic views showing an example of a package substrate 20 on which the LED chip 10 is placed. 1A and FIG. 2A are top views, and FIG. 1B and FIG. 2B are AA cross-sectional views. The LED chip 10 has a light emitting surface 12 that emits light of a predetermined wavelength, and is called a flip chip type having an electrode portion 11 for receiving power on the back surface facing the light emitting surface 12. There are no particular restrictions on the type of semiconductor that constitutes the LED chip 10. For example, a known LED chip such as one using a gallium nitride semiconductor (GaN, InGaN, AlInGaN, etc.) may be appropriately selected and used. The emitted light may be blue light, blue-green light, near ultraviolet light, ultraviolet light, or the like. The chip size is not limited, and may be 0.35 mm square (small chip) or 1 mm square (large chip). If the chip size is large, the amount of heat generation also increases. However, since the LED chip 10 is sealed with a glass body having excellent heat resistance in the manufacturing method of this embodiment, even if a large 1 mm square chip is used, it is durable. It is possible to manufacture a light emitting diode unit excellent in the above.

  The package substrate 20 has a lead portion 21 for supplying power to the LED chip 10 via the electrode portion 11. The material of the package substrate 20 is preferably a highly insulating ceramic material such as aluminum nitride or aluminum oxide. These ceramic materials can also be preferably used from the viewpoint of high adhesion to the first glass body. Further, a heat resistant resin or a metal material may be used. In the case of a conductive material, an insulating film is preferably provided on the surface.

  The LED chip 10 is mounted on the package substrate 20 in a state where the electrode portion 11 and the lead portion 21 are electrically connected. For connection between the electrode portion 11 of the LED chip 10 and the lead portion 21 of the package substrate 20, a normal flip chip bonding method may be used. For example, bumps (protrusions) made of a conductive material are provided on the lead portion 21, the package substrate 20 is fixed on a high-temperature heater, and the load is adjusted while adjusting the position of the LED chip 10 and the package substrate 20 by image processing. The method of connecting by adding. When connecting, it is also preferable to apply ultrasonic waves in addition to the heat and load of the heater. The LED chip 10 is not limited to the flip chip type, and may be a type in which the electrode part 11 of the LED chip 10 and the lead part 21 of the package substrate 20 are connected by wire bonding.

  It is also preferable to arrange a plurality of LED chips 10 on one package substrate 20. Such a configuration is particularly suitable for applications that require a high luminous flux.

  The package substrate 20 includes an air vent 23 for escaping air interposed between the molten glass droplet and the package substrate 20 during a sealing process described later. In the case of the package substrate 20 of FIG. 1, a groove 231 provided in a circle so as to surround the LED chip 10 and a lateral hole 232 that is connected to the groove 231 and releases air to the outside function as the air vent 23. In the case of the package substrate 20 of FIG. 2, the four vertical holes 233 whose diameter increases toward the bottom surface side and the horizontal holes 232 that are connected to the vertical holes 233 and allow air to escape to the outside are used as the air vent 23. Function. Thus, by setting it as the structure by which the groove | channel 231 and the vertical hole 233 are arrange | positioned around the LED chip 10, the air around the LED chip 10 can be escaped equally. In addition, since the horizontal holes 232 that allow air to escape to the outside are connected to the grooves 231 and the vertical holes 233, it is possible to more reliably suppress the occurrence of air accumulation between the package substrate 20 and the glass body. . Furthermore, since a part of the glass body enters these air vents 23, there is an effect that the glass body is firmly fixed to the package substrate 20. From the viewpoint of firmly fixing the glass body to the package substrate 20, a configuration in which a horizontal hole 232 is provided at a position where a part of the glass body enters, or a shape whose diameter increases toward the bottom surface side (the side on which the LED chip is placed). A configuration in which a vertical hole 233 having a shape in which the inner dimension is widened from the surface to the opposite surface is preferable.

  The configuration of the air vent 23 is not limited to that illustrated in FIGS. 1 and 2, and air interposed between the molten glass droplet and the package substrate 20 may be released during the sealing process. Any configuration can be used. For example, the horizontal hole 232 and the vertical hole 233 do not need to penetrate to the outside, and the cross-sectional shape is not particularly limited. Moreover, the structure which does not have the horizontal hole 232 by only the groove | channel 231 and the vertical hole 233 may be sufficient.

(Phosphor supply process)
Here, prior to the sealing process, a case where a phosphor is supplied to the light emitting surface 12 of the LED chip 10 placed on the package substrate 20 will be described as an example. Instead of supplying the body, the phosphor may be supplied to the surface of the glass body formed by the sealing process.

  The phosphor to be supplied is for converting the wavelength of light emitted from the light emitting surface 12 of the LED chip 10, and may be appropriately selected and used according to the use and type of the light emitting diode unit to be manufactured. When a chip that emits blue light is used as the LED chip 10, for example, a blue LED chip + yellow is used by using a yellow phosphor that converts the wavelength of blue light into yellow light (excited by blue light and emits yellow light). White light can be obtained by adopting a phosphor structure. By using two or more kinds of phosphors, for example, a configuration of blue LED chip + yellow phosphor + red phosphor or a configuration of blue LED chip + green phosphor + red phosphor can be used. When a chip that emits near-ultraviolet light is used as the LED chip 10, a configuration of near-ultraviolet LED chip + blue phosphor + yellow phosphor or a near-UV LED chip + blue phosphor + green phosphor + red phosphor With this configuration, white light can be obtained.

  Suitable phosphors include YAG phosphors, silicate phosphors, nitride phosphors, oxynitride phosphors, sulfide phosphors, thiogallate phosphors, aluminate phosphors, and the like.

  The method for supplying the phosphor is not particularly limited. For example, a method for placing a glass plate having a phosphor on the light emitting surface 12 (Method A), or a method for forming a phosphor layer containing the phosphor on the light emitting surface 12. (Method B) is preferred. In the case of Method A, as the glass plate having the phosphor, a kneaded glass in which the phosphor is dispersed inside, a glass plate having a phosphor layer containing the phosphor on at least one surface, or the like is preferably used. it can.

  First, in Method A, a case where a kneaded glass in which a phosphor is dispersed inside is used as a glass plate having a phosphor will be described.

  The kneaded glass in which the phosphor is dispersed inside is preferably produced by pressure molding a mixed material obtained by mixing glass powder and phosphor powder. Thereby, deterioration and deactivation of the phosphor due to heat can be suppressed as compared with the method of mixing the phosphor during the glass melting process. It is also preferable to make it densified by firing at a predetermined temperature after the pressure molding.

  A resin binder may be added to the mixed material, but in that case, a step of removing the resin binder after pressure molding is required. Therefore, it is preferable to perform pressure molding by mixing glass powder and phosphor powder without using a resin binder.

  The glass powder to be mixed preferably has a maximum particle size of 160 μm or more and a median diameter d50 of 5 μm or more. Thereby, kneaded glass in which the phosphor is uniformly dispersed can be obtained without using a resin binder. During the pressure molding, bubbles are more easily removed when the maximum particle size is 160 μm or more. If the maximum particle size is less than 160 μm, bubbles are difficult to escape. Further, when the median diameter d50 is less than 5 μm, when the powder is put into the mold, dust rises and handling becomes difficult. In addition, the work environment may be harmed. Moreover, the upper limit of the maximum particle diameter should just be a range from which favorable scattered light is obtained, and can be suitably determined according to the combination of a LED chip and fluorescent substance.

  Here, the median diameter d50 is a particle diameter (cumulative average diameter) at a point where the cumulative curve becomes 50% when the total curve of one group of particle bodies is 100%, and the maximum particle The diameter is the particle diameter at which the cumulative curve becomes 100%. These parameters are generally used as one of parameters for evaluating the particle size distribution. The median diameter d50 and the maximum particle diameter can be measured using a general laser diffraction / scattering particle size measuring apparatus. Specifically, HELOS (manufactured by JEOL), Microtrac HRA (manufactured by Nikkiso) And SALD series (manufactured by Shimadzu Corporation). Particularly preferred is the SALD series (manufactured by Shimadzu Corporation).

  As described above, by setting the particle diameter of the glass powder to a predetermined size, it is possible to obtain a kneaded glass in which the phosphor is uniformly dispersed. Thereby, primary light emitted from the LED chip can be satisfactorily scattered, and generation of bubbles that emulsify the glass in white can be suppressed, and the primary light and secondary light emitted from the phosphor can be mixed well and mixed. A kneaded glass capable of emitting light with such mixed color light (third light) can be manufactured.

Further, it is preferable that the glass powder does not precipitate crystals under the heating environment during pressure molding, or does not precipitate in a large amount even if slightly precipitated. Therefore, a glass having a crystal precipitation temperature higher than the heating temperature is preferable. For example, when the heating temperature is set to 150 ° C. to 200 ° C. higher than the glass yield point, the crystal precipitation temperature is preferably 200 ° C. or higher than the glass yield point. Specifically, P ₂ O ₅ —BaO glass, P ₂ O ₅ —ZnO glass, P ₂ O ₅ —Nb ₂ O ₅ glass, P ₂ O ₅ —B ₂ O ₃ glass, SiO ₂ glass _{, B 2 O 3 -ZnO-La} 2 O 3 based _glass, SiO ₂ -B ₂ O 3, etc. -ZnO based glass can be suitably used.

  Further, the phosphor content in the kneaded glass is preferably 0.02 to 12%, more preferably 0.05 to 5% in volume ratio. If the phosphor content is less than 0.02%, the amount of fluorescent light is too small, and if it exceeds 12%, the phosphor itself shields the light. Thus, if the content of the phosphor is 0.02 to 12%, the amount of light to be converted is not too low, and the amount of light that does not hinder the light transmission can be obtained. A kneaded glass capable of emitting mixed color light can be manufactured. Moreover, if the phosphor content is 0.05 to 5%, the balance between the converted light and the light transmission is further improved, and a kneaded glass capable of emitting a better color mixture light is manufactured. Can do.

  Next, in Method A, a method for forming a phosphor layer containing a phosphor, which is suitable when using a glass plate having a phosphor layer on at least one surface or when supplying a phosphor by Method B, will be described. To do.

  In the case of Method A, the phosphor layer containing the phosphor may be provided on the surface on the side in contact with the LED chip 10 out of the two opposing surfaces of the glass plate, or on the surface on the light emitting side. Also good. Moreover, you may provide a fluorescent substance layer in both surfaces.

  When a plurality of types of phosphors are used, all phosphors may be contained in a single phosphor layer, or a plurality of layers having different types of phosphors may be stacked. In general, when a plurality of types of phosphors are used at the same time, loss due to so-called multistage excitation, in which light emitted from the first phosphor excites another second phosphor, tends to be a problem. From the viewpoint of effectively reducing the loss due to such multi-stage excitation, it is preferable to have a configuration in which a plurality of layers having different types of phosphors are stacked. Furthermore, by arranging the phosphor having the longer emission wavelength on the side where the light from the LED chip 10 serving as the light source reaches first, and arranging the phosphor having the shorter emission wavelength on the side reaching later, Loss due to multistage excitation can be reduced more effectively.

  The phosphor layer can be formed by applying a composition in which a phosphor is dispersed on the surface of a glass plate or LED chip 10 and heating the applied composition. The composition may be applied by a known method such as spin coating or dip coating. Moreover, it is also preferable to apply | coat using a bar coater according to the shape of an application surface. A dry oven or the like may be used to heat the applied composition. The thickness of the phosphor layer formed after heating is preferably 10 μm to 80 μm. The composition to be applied may be one in which a glass body is formed by heating the gel after a reaction such as hydrolysis (sol-gel solution), or by volatilizing the solvent component, The glass body may be formed directly without becoming.

  As the former (sol-gel solution), a solution containing a metal organic compound can be used. Although there is no restriction | limiting in the kind of metal if a translucent glass body can be formed, From the viewpoint of the stability of the glass body formed and the ease of manufacture, it is preferable to contain Si. Moreover, multiple types of metals may be included. Examples of preferable organometallic compounds include metal alkoxides, metal acetylacetonates, metal carboxylates, and the like. Among these, a metal alkoxide is preferable because it is easily gelled by hydrolysis and a polymerization reaction, and a composition containing an organosiloxane compound such as polysiloxane or tetraethoxysilane is particularly preferable. By using these compounds, a stable translucent member made of silica glass can be formed by heating at a low temperature. A plurality of types of organometallic compounds may be used in combination.

  The composition to be applied preferably contains water for hydrolysis, a solvent, a catalyst and the like as appropriate in addition to the organometallic compound. Examples of the solvent include alcohols such as methanol, ethanol, propanol, and butanol. Examples of the catalyst include hydrochloric acid, sulfuric acid, nitric acid, acetic acid, hydrofluoric acid, ammonia and the like.

When polysiloxane is used as the organometallic compound, a commercially available polysiloxane dispersion (COAT-AT manufactured by CIK Nanotech) may be used. The mass ratio of the solid content (SiO ₂ ) of the polysiloxane contained in the composition to the phosphor is preferably 100 to 900 parts by mass with respect to 100 parts by mass of the solid content of the polysiloxane. The heating temperature after coating is preferably 150 ° C. to 250 ° C., and more preferably 150 ° C. to 200 ° C. from the viewpoint of further suppressing deterioration of the LED chip 10 and the like.

When tetraethoxysilane is used as the organometallic compound, it is preferable to use a mixed solution of ethyl alcohol and pure water. The mixing ratio is preferably 110 to 180 parts by mass of ethyl alcohol and 15 to 120 parts by mass of pure water with respect to 100 parts by mass of tetraethoxysilane, and 138 parts by mass of ethyl alcohol with respect to 100 parts by mass of tetraethoxysilane. More preferably, the water content is 52 parts by mass. The mass ratio of the solid tetraethoxysilane fraction and (SiO ₂₎ and the phosphor contained in the composition, relative to 100 parts by weight of the solid content of the tetraethoxysilane, is a phosphor 1-50 parts by weight. The heating temperature after coating is preferably 150 ° C. to 250 ° C., and more preferably 150 ° C. to 200 ° C. from the viewpoint of further suppressing deterioration of the LED chip 10 and the like.

  On the other hand, examples of the latter (in which the glass body is directly formed without being gelled by volatilizing the solvent component) include, for example, a composition containing an inorganic polymer and an organic solvent. As the inorganic polymer, it is preferable to use perhydropolysilazane represented by the following chemical formula 1.

_{- (SiH 2 NH) n -} ( formula 1)
When perhydropolysilazane is used, a stable translucent member made of silica glass can be formed by heating at a low temperature, and the organic component hardly remains in the formed glass, and thus has an advantage of excellent durability. is there. As an organic solvent that does not react with perhydropolysilazane, for example, xylene, dibutyl ether, terpene, or the like can be used as a solvent. Further, in addition to the organic solvent, a catalyst or the like may be added, or diluted with a petroleum-based mixed solvent. It is also preferable to use a commercially available coating solution containing perhydropolysilazane and an organic solvent (for example, Aquamica (registered trademark) manufactured by AZ Electronic Materials). The mass ratio between the solid content of perhydropolysilazane and the phosphor contained in the composition is preferably 100 to 900 parts by mass of the phosphor with respect to 100 parts by mass of the solid content of perhydropolysilazane. The heating temperature after coating is preferably 150 ° C. to 250 ° C., and more preferably 150 ° C. to 200 ° C. from the viewpoint of further suppressing deterioration of the LED chip 10 and the like.

  Moreover, when using perhydropolysilazane, it is preferable to contain a nanoparticle in a composition. Since the viscosity of the composition is increased by containing nanoparticles, the precipitation rate of the phosphor when the phosphor is dispersed in the composition is reduced, and it is easy to uniformly disperse the phosphor in the composition. Become. For example, nanoparticles of various oxides such as silica and magnesium fluoride nanoparticles are suitable. From the viewpoint of stability with a glass body formed from polysilazane, silica nanoparticles are preferably contained. The nanoparticles preferably have a 50% particle diameter (median diameter) of 1 nm to 500 nm. The shape of the nanoparticles is not particularly limited, but spherical fine particles are preferably used. The particle size distribution is not particularly limited, but from the viewpoint of uniformly dispersing the phosphor, those having a relatively narrow distribution are preferably used rather than those having a wide distribution. The shape and particle size distribution of the nanoparticles can be confirmed using SEM and TEM. The content of the nanoparticles is preferably 0.1% by mass to 25% by mass with respect to the entire composition including the phosphor. In order to disperse the nanoparticle phosphor more uniformly, it is also preferable to apply and disperse the ultrasonic wave to the composition in which the phosphor is mixed.

(Sealing process)
In this step, a molten glass droplet having a temperature higher than that of the package substrate is dropped and solidified on the package substrate on which the LED chip is placed, so that the light emitting surface of the LED chip placed on the package substrate is made into a glass body. Seal with. 3A to 3C are schematic views sequentially showing the sealing process in the present embodiment.

  The dropping of the molten glass droplet 44 is performed by heating a pipe-shaped dropping nozzle 51 connected to a melting tank (not shown) containing molten glass to a predetermined temperature by a heater 52. When the dripping nozzle 51 is heated to a predetermined temperature, the molten glass 43 is supplied to the tip of the dripping nozzle 51 by its own weight and accumulates in a droplet shape by the surface tension (FIG. 3A). When the molten glass 43 collected at the tip of the dropping nozzle 51 reaches a certain weight, it is separated from the dropping nozzle 51 by gravity and becomes a molten glass drop 44 and falls downward (FIG. 3B).

  In this embodiment, the molten glass droplet 44 dropped from the dropping nozzle 51 is once collided with the weight adjusting member 50 provided with the through pore 55, and a part of the collided molten glass droplet 44 passes through the through pore 55. The molten glass droplets 44 that have been miniaturized are dropped onto the package substrate 20. By using such a method, it is possible to obtain a molten glass droplet 44 having a size of 0.01 g, for example, so that a smaller light emitting diode unit than the case where the molten glass droplet 44 dropped from the dropping nozzle 51 is used as it is. Manufacture is possible. However, when the light emitting diode unit to be manufactured is relatively large, the molten glass droplet separated from the dropping nozzle 51 may be dropped and solidified on the package substrate 20 as it is without colliding with the weight adjusting member 50. . In this case, depending on the type of glass or the like, about 0.1 to 2 g of molten glass droplet 44 can be dropped. In addition to the method of dropping the molten glass 43 from the dropping nozzle 51 only by gravity, a method of pressing and extruding the molten glass 43 or a method of separating by applying an external force such as airflow or vibration may be used.

  The dropped molten glass droplet 44 is dropped on the package substrate 20 and then rapidly cooled and solidified by heat conduction to the package substrate 20 or the like to form a glass body 40, and the light emitting surface 12 of the LED chip 10. Is sealed (FIG. 3C). Depending on the size of the molten glass droplet 44, etc., the solidification is usually completed several seconds to several tens of seconds after the molten glass droplet 44 is dropped.

  It is also preferable that the package substrate 20 on which the LED chip 10 is placed is heated to a predetermined temperature lower than the temperature of the molten glass droplet 44 before the molten glass droplet 44 is dropped. Thereby, the familiarity of the molten glass with respect to the package substrate 20 is improved, and the molten glass easily spreads over the entire necessary range in a short time. Further, there is an advantage that adhesion to the package substrate 20 is improved. Therefore, in the present embodiment, the package substrate 20 is placed on the lower mold 62 provided with a heater inside, and the package substrate 20 is heated by heat conduction from the lower mold 62. On the other hand, when the temperature of the package substrate 20 is too high, the LED chip 10 and the like are liable to deteriorate. From such a viewpoint, the temperature of the package substrate 20 when the molten glass droplet 44 is dropped is preferably in the range of 50 ° C. to 200 ° C., and more preferably in the range of 80 ° C. to 150 ° C.

  4 and 5 are schematic views of the light emitting diode unit 100 manufactured by the method of the present embodiment. 4 (a) and 5 (a) are top views, and FIG. 4 (b) and FIG. 4 (b) are AA sectional views. The light emitting diode unit 100 of FIG. 4 uses the package substrate 20 (see FIG. 1) having the air vent part 23 composed of the groove 231 and the lateral hole 232, and after forming the phosphor layer 30 on the light emitting surface 12 of the LED chip 10, A glass body 40 is formed by dropping molten glass droplets. Since the air vent 23 is provided, there is no air reservoir between the package substrate 20 and the glass body 40, and a part of the glass body 40 enters the groove 231 and the lateral hole 232. It is firmly fixed to the substrate 20. 5 uses a package substrate 20 (see FIG. 2) having an air vent 23 composed of vertical holes 233 and horizontal holes 232, and drops molten glass droplets onto the LED chip 10 to form a glass body. After forming 40, the phosphor layer 30 is formed on the surface of the glass body 40. Also in this case, there is no air pocket between the package substrate 20 and the glass body 40, and a part of the glass body 40 enters the vertical hole 233 and the horizontal hole 232, so that the glass body 40 is firmly attached to the package substrate 20. It is fixed.

  As described above, according to the method of the present embodiment, it is not necessary to heat the LED chip 10 and the package substrate 20 to a high temperature for a long time in order to perform sealing with a glass body, and it is based on heat conduction from the molten glass droplet 44. Since only a very short temperature increase is required, the sealing of the light emitting surface 12 can be completed in a short time while sufficiently suppressing the deterioration of these members due to heat. Further, since the package substrate 20 includes the air vent 23 for escaping air interposed between the molten glass droplet 44 and the package substrate 20, an air pocket is generated between the package substrate 20 and the glass body 40. This can be suppressed. Furthermore, since a part of the glass body 40 enters the air vent 23, there is an effect that the glass body 40 is firmly fixed to the package substrate 20.

  In this step, it is preferable to seal not only the light emitting surface 12 but also the electrode portion 11 by forming the glass body 40. Usually, since the electrode part 11 of the LED chip 10 is easily damaged, the LED chip 10 can be more effectively prevented from being damaged by reliably sealing the electrode part 11 with the glass body 40.

  A bank 22 (see FIGS. 1 and 2) for restricting the spread of the dropped molten glass droplet 44 is preferably formed around the portion of the package substrate 20 where the LED chip 10 is placed. Accordingly, a necessary region can be reliably sealed regardless of the viscosity of the molten glass droplet 44. The bank 22 is preferably formed higher than the light emitting surface 12 so that the light emitting surface 12 of the LED chip 10 can be reliably sealed. Further, when a part of the light emitted from the LED chip 10 reaches the bank 22, the bank 22 has a predetermined inclined surface so that the light is reflected by the bank 22 and efficiently emitted forward. It is preferable. Thereby, the luminous efficiency of the light emitting diode unit can be improved.

  There is no restriction | limiting in particular in the kind of glass which can be used, A well-known glass can be selected and used according to a use. Examples thereof include optical glasses such as borosilicate glass, silicate glass, phosphate glass, and lanthanum glass. From the viewpoint of suppressing the reflection of light at the boundary surface between the light emitting surface 12 of the LED chip 10 and the glass body 41 and further improving the light extraction efficiency, use a glass having a small difference in refractive index from the LED chip 10. Is preferred.

  The surface of the glass body 40 has a gentle convex shape, but the degree of convexity of the surface can be adjusted by changing the temperature and size of the molten glass droplet 44 to be dropped. For example, when the temperature of the molten glass droplet 44 to be dropped is increased, the viscosity is lowered, and the surface of the glass body 40 has a flatter shape (the curvature is reduced). Conversely, when the temperature of the molten glass droplet 44 is lowered, the viscosity increases, and the surface of the glass body 40 has a tighter convex shape (the curvature increases). Thus, the glass body 40 can be formed in a desired shape by changing the conditions for dropping the molten glass droplet 44.

<Second Embodiment>
The manufacturing method of the light emitting diode unit of 2nd Embodiment is demonstrated with reference to FIGS. The manufacturing method of the light emitting diode unit according to the present embodiment includes a step of supplying a phosphor for converting the wavelength of light emitted from the LED chip (phosphor supply step), and solidifying the molten glass droplet, thereby providing a package substrate. And a step of sealing the light emitting surface of the LED chip placed on the substrate with a glass body (sealing step). In the sealing process of this embodiment, after dropping a molten glass droplet having a temperature higher than that of the package substrate on the package substrate on which the LED chip is placed, before the molten glass droplet is solidified, the package substrate and the upper mold The glass body is formed into a predetermined shape by pressurizing the molten glass drop. The phosphor supply process is the same as that in the first embodiment described above, and the phosphor supply process is unnecessary when manufacturing a light emitting diode unit that does not use a phosphor. Hereinafter, a description will be given centering on differences from the first embodiment.

  FIGS. 6A to 6D are schematic views sequentially showing the sealing process in the second embodiment. First, similarly to the case of the first embodiment, a molten glass droplet 44 having a temperature higher than that of the package substrate 20 is dropped on the package substrate 20 on which the LED chip 10 is placed (FIG. 6A, ( b)). It is preferable to drop molten glass droplets miniaturized by the weight adjusting member 50 on the package substrate 20. The details of the dropping method of the molten glass droplet 44 are the same as in the case of the first embodiment.

  After dropping the molten glass droplet 44, the package substrate 20 disposed on the lower mold 62 is moved to a position facing the upper mold 61, and before the molten glass droplet 44 is cooled and solidified, the package substrate 20 and The molten glass droplet 44 is pressurized with the upper mold 61 (FIG. 6C). The molten glass droplet 44 is rapidly cooled by heat conduction to the package substrate 20 and the upper mold 61 and solidifies in a short time to become the glass body 40. After releasing the pressure, the upper mold 61 is moved upward, and the package substrate 20 integrated with the glass body 40 is collected (FIG. 6D). As described above, in the present embodiment, in order to pressurize and deform the dropped molten glass droplet 44, the glass sheet is heated and pressurized together with the members such as the package substrate 20 as described in Patent Document 4 described above. As compared with the above, the pressurizing load can be suppressed to a very small value, and can be sufficiently deformed in a very short pressurizing time. Therefore, a light-emitting diode unit can be manufactured in a short time while sufficiently suppressing deterioration due to temperature and damage due to pressure of each member.

  The load applied to form the molten glass droplet 44 and the pressurizing time may be appropriately set according to the size of the molten glass droplet 44, etc. Usually, a load in the range of several tens to several hundreds N is from several seconds to In many cases, it is sufficient to apply pressure for several tens of seconds. Further, the applied load may be changed with time. The means for applying the load is not particularly limited, and known driving means such as an air cylinder, a hydraulic cylinder, a servo motor, etc. may be appropriately selected and used.

  The upper mold 61 is preferably heated to a predetermined temperature in advance. The predetermined temperature is a temperature that is lower than the temperature of the molten glass droplet 44 to be dripped and is cooled and solidified by pressure molding, and may be appropriately selected according to the type of glass to be used. Good. Generally, when the temperature of the upper mold 61 is too low, wrinkles are likely to occur on the surface of the glass molded body. On the other hand, if the temperature is set higher than necessary, the life of the upper die 61 is likely to be shortened due to fusion with the glass or oxidation of the surface. From these viewpoints, the temperature of the upper mold 61 is preferably set in the range of Tg-100 ° C to Tg + 100 ° C, where Tg is the glass transition temperature of the glass used, and the range of Tg-100 ° C to Tg + 50 ° C. It is more preferable to set to. As a heating means for heating the upper mold 61, a known heating means can be appropriately selected and used. For example, an infrared heating device, a high-frequency induction heating device, a cartridge heater that is used by being embedded in the upper die 61, a sheet heater that is used while being in contact with the outside of the upper die 61, and the like are suitable.

  The material of the upper mold 61 can be appropriately selected from known materials as a mold for producing a glass molded body by pressure molding. For example, various heat-resistant alloys (such as stainless steel), super hard materials mainly composed of tungsten carbide, various ceramics (such as silicon carbide, silicon nitride, and aluminum nitride), composite materials containing carbon, and the like can be given. It is also preferable to provide a coating layer on the molding surface in contact with the molten glass droplet 44 in order to improve the durability of the upper mold 61 and prevent fusion with the glass. There are no particular restrictions on the material of the coating layer. For example, various metals (chromium, aluminum, titanium, etc.), nitrides (chromium nitride, aluminum nitride, titanium nitride, boron nitride, etc.), oxides (chromium oxide, aluminum oxide, Titanium oxide or the like) can be used.

  7 and 8 are schematic views of the light emitting diode unit 100 manufactured by the method of the present embodiment. FIGS. 7A and 8A are top views, and FIGS. 7B and 8B are cross-sectional views taken along line AA. The light emitting diode unit 100 of FIG. 7 uses a package substrate 20 (see FIG. 2) having an air vent 23 composed of vertical holes 233 and horizontal holes 232, and forms a phosphor layer 30 on the light emitting surface 12 of the LED chip 10 and melts it. After dropping the glass droplet, the molten glass droplet is pressed with the upper mold 61 having a flat molding surface to mold the glass body 40 into a flat surface. Since the air vent 23 is provided, there is no air reservoir between the package substrate 20 and the glass body 40, and a part of the glass body 40 is inserted into the vertical hole 233 and the horizontal hole 232. It is firmly fixed to the substrate 20. 8 uses a package substrate 20 (see FIG. 1) having an air vent 23 composed of a groove 231 and a lateral hole 232, and forms a phosphor layer 30 on the light emitting surface 12 of the LED chip 10. After the molten glass droplet is dropped, the glass body 40 is formed into a convex spherical surface by pressing the molten glass droplet with an upper mold 61 having a spherical surface with a concave molding surface. Also in this case, there is no air pocket between the package substrate 20 and the glass body 40, and a part of the glass body 40 enters the groove 231 and the lateral hole 232, so that the glass body 40 is firmly attached to the package substrate 20. It is fixed.

  Thus, according to the method of this embodiment, the method of heating and pressing the glass sheet together with the members such as the package substrate 20 as described in Patent Document 4 cannot be formed unless high temperature and high pressure are applied for a long time. Even such a shape can be formed by applying a small pressure for a very short time. Further, since the package substrate 20 includes the air vent 23 for escaping air interposed between the molten glass droplet 44 and the package substrate 20, an air pocket is generated between the package substrate 20 and the glass body 40. This can be suppressed. Furthermore, since a part of the glass body 40 enters the air vent 23, there is an effect that the glass body 40 is firmly fixed to the package substrate 20.

<Third Embodiment>
A method for manufacturing the light-emitting diode unit of the third embodiment will be described with reference to FIG. The manufacturing method of the light emitting diode unit according to the present embodiment includes a step of supplying a phosphor for converting the wavelength of light emitted from the LED chip (phosphor supply step), and solidifying the molten glass droplet, thereby providing a package substrate. And a step of sealing the light emitting surface of the LED chip placed on the substrate with a glass body (sealing step). In the sealing process of the present embodiment, a molten glass droplet having a temperature higher than that of the lower mold is dropped on the lower mold, and the package substrate on which the LED chip is placed is turned upside down before the molten glass droplet is solidified. Then, a molten glass droplet is pressed between the package substrate and the lower mold to form a glass body into a predetermined shape. The phosphor supply process is the same as that in the first embodiment described above, and the phosphor supply process is unnecessary when manufacturing a light emitting diode unit that does not use a phosphor. Hereinafter, a description will be given focusing on differences from the first and second embodiments.

  FIGS. 9A to 9D are schematic views sequentially showing the sealing process in the third embodiment. First, a molten glass droplet 44 having a temperature higher than that of the lower die 62 is dropped on the molding surface of the lower die 62 (FIGS. 9A and 9B). The molding surface of the lower mold 62 is processed in advance into a predetermined shape corresponding to the shape of the glass body 40 of the light emitting diode unit 50 to be manufactured. It is preferable to drop molten glass droplets miniaturized by the weight adjusting member 50 on the molding surface. The details of the dropping method of the molten glass droplet 44 are the same as in the case of the first embodiment. At this time, the package substrate 20 on which the LED chip 10 is placed is turned upside down and fixed to the upper die 61.

  Next, the molten glass droplet 44 is pressurized by the package substrate 20 and the lower mold 62 at a predetermined timing before the dropped molten glass droplet 44 is cooled and solidified (FIG. 9C). The molten glass droplet 44 is rapidly cooled by heat conduction to the package substrate 20 and the lower mold 62 and solidifies in a short time to become the glass body 40. After the glass body 40 is cooled to a predetermined temperature, the package substrate 20 is moved upward to release the pressure, and the package substrate 20 integrated with the glass body 40 is recovered (FIG. 9D).

  The timing for pressurizing the molten glass droplets 44 with the package substrate 20 and the lower mold 62 is preferably slower from the viewpoint of suppressing deterioration of the LED chip 10 and the like due to heat, but if it is too late, the glass body 40 has a predetermined shape. Therefore, a large pressure is required to form the film. From such a viewpoint, it is preferable to pressurize the molten glass droplet 44 several seconds to several tens of seconds after the molten glass droplet 44 is dropped onto the lower mold 62. What is necessary is just to set suitably the load and pressurization time to apply. The lower mold 62 is preferably heated to a predetermined temperature in advance. Thereby, the shape of the glass body 40 formed by the transfer of the lower mold 62 is stabilized. The predetermined temperature is a temperature lower than the temperature of the molten glass droplet 44 to be dropped, and may be appropriately selected according to the type of glass to be used. The material of the lower mold 62 is preferably a material that has high heat resistance and hardly reacts with the molten glass, and it is preferable to use the same material as that of the upper mold 61 used in the second embodiment described above.

  It is also preferable to heat the package substrate 20 on which the LED chip 10 is placed to a predetermined temperature lower than the temperature of the molten glass droplet 44. Thereby, the familiarity of the molten glass with respect to the LED chip 10 and the package substrate 20 is improved, and the molten glass easily spreads over the entire necessary range in a short time. Further, there is an advantage that adhesion between the glass body 40 and the package substrate 20 after the molten glass droplet 44 is solidified is improved. On the other hand, when the temperature of the package substrate 20 is too high, the LED chip 10 and the like are liable to deteriorate. From such a viewpoint, the temperature of the package substrate 20 is preferably in the range of 50 ° C to 200 ° C, and more preferably in the range of 80 ° C to 150 ° C.

  The configuration of the light emitting diode unit 50 manufactured by the method of this embodiment is the same as that of the second embodiment shown in FIGS.

  Thus, in this embodiment, since the molten glass droplet 44 is dropped on the molding surface of the lower mold 62 formed in a predetermined shape, the glass body 40 is formed in a desired shape without applying high pressure. can do. Further, since the molten glass droplet 44 and the package substrate 20 come into contact with each other at a predetermined timing after the dropped molten glass droplet 44 is cooled to some extent, the LED chip 10 or the like due to the influence of heat from the molten glass droplet 44 is used. Degradation can be minimized. Accordingly, the light emitting diode unit 50 can be manufactured in a short time while sufficiently suppressing deterioration due to temperature and damage due to pressure of each member. Further, since the package substrate 20 includes the air vent 23 for escaping air interposed between the molten glass droplet 44 and the package substrate 20, an air pocket is generated between the package substrate 20 and the glass body 40. This can be suppressed. Furthermore, since a part of the glass body 40 enters the air vent 23, there is an effect that the glass body 40 is firmly fixed to the package substrate 20.

DESCRIPTION OF SYMBOLS 10 LED chip 11 Electrode part 12 Light emission surface 20 Package board 21 Lead part 22 Bank 23 Air vent part 231 Groove 232 Horizontal hole 233 Vertical hole 30 Phosphor layer 40 Glass body 43 Molten glass 44 Molten glass droplet 50 Weight adjusting member 51 Dripping nozzle 52 Heater 55 Through-hole 61 Upper mold 62 Lower mold 100 Light-emitting diode unit

Claims (22)

An LED chip that emits light of a predetermined wavelength from a light emitting surface, a package substrate on which the LED chip is placed, and a glass body that seals the light emitting surface, and a manufacturing method of a light emitting diode unit,
A sealing step of sealing the light emitting surface of the LED chip placed on the package substrate with the glass body by solidifying molten glass droplets;
The method for manufacturing a light-emitting diode unit, wherein the package substrate includes an air vent for releasing air interposed between the molten glass droplet and the package substrate.   The method of manufacturing a light emitting diode unit according to claim 1, wherein the air vent has a groove surrounding the LED chip.   2. The method of manufacturing a light emitting diode unit according to claim 1, wherein the air vent part has a vertical hole extending from a surface of the package substrate on the side on which the LED chip is placed to an opposite surface.   4. The method of manufacturing a light emitting diode unit according to claim 3, wherein the vertical hole has a shape in which an inner dimension expands from a surface on the side on which the LED chip is placed toward an opposite surface. The air vent has a groove surrounding the LED chip, and a vertical hole from the surface of the package substrate on the side where the LED chip is placed to the opposite surface,
The method for manufacturing a light emitting diode unit according to claim 1, wherein the vertical hole is connected to the groove.   The method for manufacturing a light-emitting diode unit according to claim 3, wherein the vertical hole passes therethrough.   The method of manufacturing a light-emitting diode unit according to claim 1, wherein the air vent has a lateral hole that extends from the inside to the outside where the LED chip of the package substrate is placed. The air vent has a groove surrounding the LED chip and a lateral hole from the inside to the outside where the LED chip of the package substrate is placed,
The method for manufacturing a light emitting diode unit according to claim 1, wherein the lateral hole is connected to the groove. The air vent includes a vertical hole from the surface of the package substrate on the side where the LED chip is placed to the opposite surface, and a lateral hole from the inside to the outside of the package substrate on which the LED chip is placed. Have
The method for manufacturing a light emitting diode unit according to claim 1, wherein the horizontal hole is connected to the vertical hole.   The method for manufacturing a light emitting diode unit according to any one of claims 7 to 9, wherein the horizontal hole passes therethrough.   In the sealing step, the molten glass droplet having a temperature higher than that of the package substrate is dropped and solidified on the package substrate on which the LED chip is placed, thereby sealing the light emitting surface with the glass body. The method for manufacturing a light-emitting diode unit according to claim 1, wherein the method is stopped.   In the sealing step, before the dropped molten glass droplet is solidified, the molten glass droplet is pressurized with the package substrate and an upper mold, and the glass body is formed into a predetermined shape. Item 12. A method for producing a light-emitting diode unit according to Item 11.   In the sealing step, the molten glass droplet having a higher temperature than the lower die is dropped on the lower die, the package substrate on which the LED chip is placed is turned upside down, and the molten glass droplet dropped. 11. The method according to claim 1, wherein the molten glass droplet is pressurized with the package substrate and the lower mold before the glass body is solidified to form the glass body into a predetermined shape. Manufacturing method of light emitting diode unit.   14. The method according to claim 11, further comprising a step of supplying a phosphor for converting a wavelength of light emitted from the LED chip to the light emitting surface of the LED chip prior to the sealing step. A method for producing a light-emitting diode unit according to claim 1.   14. The method according to claim 11, further comprising a step of supplying a phosphor for converting a wavelength of light emitted from the LED chip to the surface of the glass body after the sealing step. The manufacturing method of the light emitting diode unit as described in a term.   16. The phosphor is supplied by applying a composition in which the phosphor is dispersed, and heating the applied composition to form a phosphor layer. Manufacturing method of the light emitting diode unit.   The method according to claim 16, wherein the composition includes an inorganic polymer and an organic solvent.   The method of manufacturing a light emitting diode unit according to claim 17, wherein the inorganic polymer is perhydropolysilazane.   The method of manufacturing a light emitting diode unit according to claim 16, wherein the composition contains an organosiloxane compound.   16. The method of manufacturing a light emitting diode unit according to claim 14, wherein the supply of the phosphor is performed by laminating a second glass body having the phosphor.   21. The method of manufacturing a light emitting diode unit according to claim 20, wherein the second glass body is a kneaded glass in which the phosphor is dispersed.   21. The method of manufacturing a light emitting diode unit according to claim 20, wherein the second glass body has a phosphor layer containing the phosphor on at least one surface.

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