JP2011191755A - Exposure method, method for manufacturing substrate, and exposure apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure method, a method for manufacturing a substrate, and an exposure apparatus for improving exposure accuracy while preventing deflection of a substrate. <P>SOLUTION: A substrate stage 20 includes an annular suction region 80b and rectangular suction regions 80c, 80d, 80e each having a smaller area than the annular suction region 80b on a suction surface 22. In sucking a substrate W to the suction surface 22 of the substrate stage 20, suction force for sucking air in the rectangular suction regions 80c, 80d, 80e is made smaller than the suction force for sucking air in the annular suction region 80b so that the pressure in the annular and rectangular suction regions 80b, ..., 80e is substantially fixed. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an exposure method, a substrate manufacturing method, and an exposure apparatus.

  Conventionally, various exposure apparatuses for manufacturing color filter substrates and TFT (Thin Film Transistor) substrates for flat panel display devices such as liquid crystal display devices and plasma display devices have been devised. In the exposure apparatus, the mask is held by the mask holding unit and the substrate is held by the substrate holding unit, and the two are placed in close proximity to each other. The mask pattern drawn on the mask is exposed and transferred onto the substrate by irradiating light for pattern exposure from the mask side. In addition, the substrate is vacuum-sucked to the substrate holder so that the substrate held by the substrate holder does not shift when the substrate holder moves.

  In the exposure apparatus described in Patent Document 1, the substrate holding unit has a plurality of protrusions (embosses) on the suction surface that sucks and holds the substrate, and a plurality of suction regions according to the installation direction and size of the substrate. In order to define, it has a partition wall which partitions adjacent adsorption | suction area | regions. Then, as shown in FIG. 7, if a difference in pressure occurs between the adjacent suction regions A and B, the substrate W is bent and exposure unevenness occurs. In Patent Document 1, the interval between the partition wall and the protrusion is determined. Is set to a predetermined width, the amount of bending of the substrate is made substantially equal, the flatness of the substrate is improved, and uneven exposure is suppressed.

JP 2009-212345 A

  By the way, in the exposure apparatus described in Patent Document 1, an attempt is made to suppress bending by setting the interval between the partition wall and the projection to a predetermined width, but there is no specific description about the suction force in each suction region. When there is a pressure difference between adjacent suction areas, there is still a possibility that bending will occur and exposure unevenness will occur.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide an exposure method, a substrate manufacturing method, and an exposure apparatus that improve the exposure accuracy by suppressing the bending of the substrate.

The above object of the present invention can be achieved by the following constitution.
(1) A mask holding unit that holds a mask having a pattern to be exposed, a substrate holding unit that has a suction surface that sucks and holds a substrate as an exposed material, and a substrate held by the substrate holding unit, An illumination optical system that irradiates exposure light through the mask, and a suction surface of the substrate holding portion includes a first suction region partitioned by a partition wall that can contact the back surface of the substrate. An exposure method in which the pattern of the mask is exposed and transferred onto the substrate by an exposure apparatus in which at least a second suction region having a smaller area than the first suction region is formed,
When adsorbing the substrate on the adsorption surface of the substrate holding unit, a suction force for sucking air in the second adsorption region is set so that the pressure in the first and second adsorption regions is substantially constant. An exposure method characterized by making the suction force smaller than the suction force for sucking air in the first suction region.
(2) A method for producing a substrate, wherein the exposure method according to (1) is used.
(3) a mask holding unit for holding a mask having a pattern to be exposed;
A substrate holding part having an adsorption surface for adsorbing and holding a substrate as an exposed material;
An illumination optical system for irradiating the substrate held by the substrate holding unit with exposure light through the mask;
A positive / negative pressure control device for selectively and independently setting the inside of each adsorption region to a positive, negative pressure and atmospheric pressure state;
An exposure apparatus that exposes and transfers the pattern of the mask onto the substrate,
On the suction surface of the substrate holding part, a first suction region partitioned by a partition wall capable of contacting the back surface of the substrate, a second suction region having a smaller area than the first suction region, Is at least formed,
The positive / negative pressure control device includes:
Direction control means for connecting and shutting off the positive and negative pressure pipes connected to the respective adsorption regions and the positive pressure pipe connected to the compressed air source or the negative pressure pipe connected to the negative pressure generating source When,
Pressure control means for adjusting the pressure of air passing through the inside of the positive and negative pressure pipes;
Flow rate control means for adjusting the flow rate of air passing through the inside of the positive and negative pressure pipes;
With
The positive / negative pressure control device is configured to adjust the pressure in the second adsorption region so that the pressure in the first and second adsorption regions is substantially constant when the substrate is adsorbed on the adsorption surface of the substrate holding unit. An exposure apparatus that controls a suction force for sucking air to be smaller than a suction force for sucking air in the first suction region.
(4) The pressure in each adsorption region is detected by a pressure sensor, and at least one of the direction control means, the pressure control means, and the flow rate control means is controlled based on the detected pressure. The exposure apparatus according to (3).
(5) The exposure apparatus according to (3), wherein the direction control means is an electromagnetic switching valve, the pressure control means is a stop valve, and the flow rate control means is an air regulator.

  According to the exposure method and the exposure apparatus of the present invention, in the substrate holding unit having the first suction region and the second suction region having a smaller area than the first suction region on the suction surface, When adsorbing the substrate to the adsorption surface, the suction force for sucking the air in the second adsorption region is set so that the pressure in the first and second adsorption regions becomes substantially constant. Since it is made smaller than the suction force for sucking the air inside, the bending of the substrate is suppressed, and the exposure accuracy can be improved.

It is a partially exploded perspective view for explaining a proximity exposure apparatus to which the exposure method of the present invention is applied. It is a front view of the proximity exposure apparatus shown in FIG. It is an expansion perspective view of the mask holding | maintenance part shown in FIG. It is a top view of the board | substrate holding | maintenance part shown in FIG. It is a block diagram which shows the positive / negative pressure control apparatus which selectively controls the adsorption | suction area | region of a board | substrate holding part to a positive pressure, a negative pressure, and atmospheric pressure state. It is a partial block diagram for demonstrating the modification of a positive / negative pressure control apparatus. It is a schematic diagram for demonstrating the bending of the board | substrate produced by the difference in the pressure of a suction area | region.

  Hereinafter, an exposure method, a substrate manufacturing method, and an exposure apparatus according to the present invention will be described in detail with reference to the drawings.

  As shown in FIG. 1, a proximity exposure apparatus 1 includes a mask stage (mask holding unit) 10 that holds a mask M, a substrate stage (substrate holding unit) 20 that holds a glass substrate (exposed material) W, and a pattern. An illumination optical system 30 serving as an irradiation means for exposure, a substrate stage moving mechanism 40 for moving the substrate stage 20 in the X-axis, Y-axis, and Z-axis directions and adjusting the tilt of the substrate stage 20, the mask stage 10, And an apparatus base 50 that supports the substrate stage moving mechanism 40.

  Note that a glass substrate W (hereinafter simply referred to as “substrate W”) is disposed to face the mask M, and a surface (on the opposite surface side of the mask M) for exposing and transferring a mask pattern drawn on the mask M. ) Is coated with a photosensitive agent. The mask M is made of fused quartz and has a rectangular shape.

  For convenience of explanation, the illumination optical system 30 will be described. The illumination optical system 30 is, for example, a high-pressure mercury lamp 31 that is a light source for ultraviolet irradiation, and a concave mirror 32 that collects light emitted from the high-pressure mercury lamp 31. Between the two types of optical integrators 33, which are switchably arranged near the focal point of the concave mirror 32, the plane mirrors 35 and 36 and the spherical mirror 37 for changing the direction of the optical path, and between the plane mirror 36 and the optical integrator 33. And an exposure control shutter 34 that controls the opening and closing of the irradiation light path.

  In the illumination optical system 30, when the exposure control shutter 34 is controlled to be opened at the time of exposure, the light irradiated from the high-pressure mercury lamp 31 passes through the optical path L, the mask M held on the mask stage 10, and further the substrate. Irradiated as parallel light for pattern exposure perpendicular to the surface of the substrate W held on the stage 20. Thereby, the mask pattern of the mask M is exposed and transferred onto the substrate W.

  As shown in FIGS. 1 to 3, the mask stage 10 includes a mask stage base 11 in which a rectangular opening 11 a is formed at the center, and an X axis, a Y axis, and θ on the opening 11 a of the mask stage base 11. A mask holding frame 12 that is movably mounted in a direction, a chuck portion 14 that is attached to the mask holding frame 12 and holds the mask M by suction, and the mask holding frame 12 and the chuck portion are arranged in the X, Y, and θ directions. And a mask position adjustment mechanism 16 that adjusts the position of the mask M held by the mask holding frame 12.

  The mask stage base 11 is supported by a column 51 standing on the apparatus base 50 and a Z-axis moving device 52 provided at the upper end of the column 51 so as to be movable in the Z-axis direction, and is disposed above the substrate stage 20. Is done. The Z-axis moving device 52 includes, for example, an electric actuator including a motor and a ball screw, a pneumatic cylinder, or the like, and moves the mask stage 10 up and down to a predetermined position by performing a simple vertical movement. The Z-axis moving device 52 is used for exchanging the mask M, cleaning the work chuck 21, and the like.

  The mask position adjusting mechanism 16 includes one Y-axis direction driving device 16y attached to one side along the X-axis direction of the mask holding frame 12 and two Xs attached to one side along the Y-axis direction of the mask holding frame 12. An axial drive device 16x.

  The mask position adjusting mechanism 16 moves the mask holding frame 12 in the Y-axis direction by driving one Y-axis direction driving device 16y, and drives the two X-axis direction driving devices 16x equally. Thus, the mask holding frame 12 is moved in the X-axis direction. Further, the mask holding frame 12 is moved in the θ direction (rotated about the Z axis) by driving one of the two X-axis direction driving devices 16x.

  Further, on the upper surface of the mask stage base 11, as shown in FIG. 3, a gap sensor 17 for measuring a gap between the opposing surfaces of the mask M and the substrate W, and a mounting position of the mask M held by the chuck portion 14. And a mask alignment camera 18 for confirming the above. The gap sensor 17 and the mask alignment camera 18 are held so as to be movable in the X-axis and Y-axis directions via the moving mechanism 19 and are arranged in the mask holding frame 12.

  On the upper surface of the mask stage base 11, as shown in FIG. 3, a masking aperture 38 that shields both ends of the mask M as necessary at both ends in the X-axis direction of the opening 11 a of the mask stage base 11. Is provided. The masking aperture 38 is movable in the X-axis direction by a masking aperture drive mechanism 39 including a motor, a ball screw, a linear guide, and the like, and adjusts the shielding area at both ends of the mask M. Note that the masking aperture 38 may be provided not only at both ends in the X-axis direction of the opening 11a but also at both ends in the Y-axis direction of the opening 11a.

  As shown in FIGS. 1 and 2, the substrate stage 20 is provided on a substrate stage moving mechanism 40 and includes a work chuck 21 having an adsorption surface 22 for holding the substrate W on the substrate stage 20 on the upper surface. . The work chuck 21 holds the substrate W by vacuum suction.

  As shown in FIGS. 1 and 2, the substrate stage moving mechanism 40 includes a Y-axis feed mechanism 41 that moves the substrate stage 20 in the Y-axis direction, and an X-axis feed mechanism 42 that moves the substrate stage 20 in the X-axis direction. And a Z-tilt adjustment mechanism 43 that performs the tilt adjustment of the substrate stage 20 and finely moves the substrate stage 20 in the Z-axis direction.

  The Y-axis feed mechanism 41 includes a pair of linear guides 44 installed on the upper surface of the apparatus base 50 along the Y-axis direction, a Y-axis table 45 supported by the linear guide 44 so as to be movable in the Y-axis direction, And a Y-axis feed driving device 46 for moving the axis table 45 in the Y-axis direction. Then, by driving the motor 46c of the Y-axis feed driving device 46 and rotating the ball screw shaft 46b, the Y-axis table 45 is moved along the guide rail 44a of the linear guide 44 together with the ball screw nut 46a. The stage 20 is moved in the Y axis direction.

  The X-axis feed mechanism 42 includes a pair of linear guides 47 installed on the upper surface of the Y-axis table 45 along the X-axis direction, and an X-axis table 48 supported by the linear guide 47 so as to be movable in the X-axis direction. And an X-axis feed drive device 49 that moves the X-axis table 48 in the X-axis direction. Then, by driving the motor 49c of the X-axis feed driving device 49 and rotating the ball screw shaft 49b, the X-axis table 48 is moved along the guide rail 47a of the linear guide 47 together with a ball screw nut (not shown). Then, the substrate stage 20 is moved in the X-axis direction.

  The Z-tilt adjustment mechanism 43 includes a motor 43a installed on the X-axis table 48, a ball screw shaft 43b rotated by the motor 43a, and a wedge formed in a wedge shape and screwed into the ball screw shaft 43b. And a wedge portion 43d that protrudes in a wedge shape on the lower surface of the substrate stage 20 and engages with the inclined surface of the wedge nut 43c. In the present embodiment, two Z-tilt adjustment mechanisms 43 are provided on one end side (front side in FIG. 1) in the X-axis direction of the X-axis table 48, and one set on the other end side (the rear side in FIG. A total of 3 units are installed (see FIG. 2), and each is driven and controlled independently. The number of Z-tilt adjustment mechanisms 43 installed is arbitrary.

  In the Z-tilt adjustment mechanism 43, when the ball screw shaft 43b is rotationally driven by the motor 43a, the wedge-shaped nut 43c is horizontally moved in the X-axis direction, and this horizontal movement is caused by the wedge-shaped nut 43c and the wedge portion 43d. The wedge portion 43d is finely moved in the Z direction by being converted into a highly precise vertical fine motion by the action of the slope. Accordingly, by driving the three Z-tilt adjustment mechanisms 43 by the same amount, the substrate stage 20 can be finely moved in the Z-axis direction, and the three Z-tilt adjustment mechanisms 43 are independently driven. By doing so, the tilt adjustment of the substrate stage 20 can be performed. As a result, the position of the substrate stage 20 in the Z-axis and tilt directions can be finely adjusted so that the mask M and the substrate W face each other in parallel with a predetermined interval.

  Further, as shown in FIGS. 1 and 2, the proximity exposure apparatus 1 is provided with a laser length measuring device 60 that is a position measuring device that detects the position of the substrate stage 20. The laser length measuring device 60 measures the moving distance of the substrate stage 20 that occurs when the substrate stage moving mechanism 40 is driven.

  The laser length measuring device 60 is fixed to a stay (not shown) and disposed along the X-axis direction side surface of the substrate stage 20, and is fixed to the stay 71 and fixed to the Y of the substrate stage 20. A Y-axis mirror 65 disposed along the side surface in the axial direction, and an X-axis direction end of the apparatus base 50, irradiates the X-axis mirror 64 with laser light (measurement light). X-axis length measuring device (length measuring device) 61 and yawing measuring device (length measuring device) 62 that receive the laser light reflected by the mirror 64 and measure the position of the substrate stage 20, and Y of the apparatus base 50 One Y-axis disposed at the end in the axial direction for irradiating the Y-axis mirror 65 with laser light and receiving the laser light reflected by the Y-axis mirror 65 to measure the position of the substrate stage 20 A length measuring device (length measuring device) 63.

  In the laser length measuring device 60, the X-axis length measuring device 61, the yawing measuring device 62, and the Y-axis length measuring device 63 irradiate the X-axis mirror 64 and the Y-axis mirror 65 with the laser light applied to the X-axis measuring device. By being reflected by the mirror for mirror 64 and the mirror for X axis 65, the positions of the substrate stage 20 in the X axis and Y axis directions are measured with high accuracy. Further, the position data in the X-axis direction is measured by the X-axis length measuring device 61, and the position in the θ direction is measured by the yawing measuring device 62. The position of the substrate stage 20 is calculated by appropriately correcting the position in the X-axis direction, the Y-axis direction, and the θ-direction measured by the laser length measuring device 60.

  FIG. 4 is a top view schematically showing the suction surface of the work chuck 21 of the proximity exposure apparatus 1. The suction surface 22 of the work chuck 21 has five independent suction regions, namely, a central suction region 80a, an annular suction region (first suction region) 80b surrounding the central suction region 80a, and an annular suction region. Rectangular suction regions (second suction regions) 80c, 80d, and 80e, which are located outside the region 80b, are formed. The central suction region 80a and the outer annular suction region 80b are partitioned by a quadrangular first partition wall 81a. Further, the annular suction region 80b and the long suction regions 80c, 80d, and 80e formed at three locations outside thereof are partitioned by a quadrangular second partition wall 82a. The central suction region 80a has a smaller area than the annular suction region 80b, and each rectangular suction region 80c, 80d, 80e has a smaller area than the annular suction region 80b. Yes.

  Accordingly, the central suction region 80a is defined by the first partition wall 81a, and the annular suction region 80b is defined between the first and second partition walls 81a and 82a. Further, each of the rectangular suction regions 80 c, 80 d, and 80 e is defined by the second partition wall 82 a and the peripheral wall 83 a that is the outer peripheral edge of the suction surface 22. Note that the shape of the peripheral portion 83a corresponds to the size of the rectangular substrate W, and suction is performed in the rectangular suction regions 80c, 80d, and 80e according to the orientation of the substrate W.

  In addition, a plurality of projections 85 having a height equal to the height of each partition wall 81a, 82a are formed in each suction region 80a, ..., 80e, and each partition wall 81a, 82a and projection 85 has It is possible to contact the back surface of the substrate W. Moreover, the part except each partition wall 81a, 82a and protrusion 85 is the low part 86 of each adsorption | suction area | region 80a, ..., 80e.

  The suction surface 22 has a plurality of pin holes (not shown) through which a plurality of pins (not shown) advanced from the suction surface 22 when the substrate W is transported to the work chuck 21 by a work loader (not shown). (Not shown) is formed. Further, a plurality of positive and negative pressure holes 87a,..., 87e are opened on the surface of each low portion 86 in each suction region 80a,.

  Next, the positive / negative pressure control device for selectively and independently setting the suction regions 80a,..., 80e to the positive, negative pressure, and atmospheric pressure states via the plurality of positive / negative pressure holes 87a,. 186 will be described with reference to the block diagram of FIG.

  In FIG. 5, a negative pressure pipe line 865 a that makes the space above the lower part 86 of the adsorption region 80 a negative pressure is a vacuum pump 861 that is a negative pressure generation source, and a stop valve that manually opens and closes the main negative pressure pipe line 865. It consists of a piping circuit that branches from a main negative pressure piping line 865 that connects 862V and that connects an air regulator 863aV that adjusts the pressure or flow rate of the negative pressure piping line 865a, and is input to a three-position, three-port electromagnetic switching valve 867a. A pipe is connected to the port P1.

  On the other hand, the positive pressure pipe line 866a that makes the low part 86 of the adsorption region 80a positive pressure is a main positive pressure that connects a stop valve 862P that manually opens and closes the main positive pressure pipe line 866 from a compressed air source (not shown). The positive pressure pipe line 866a is composed of a pipe circuit that branches from the pipe line 866 and connects an air regulator 863aP that adjusts the pressure of the positive pressure pipe line 866a and a filter 864a that cleanly filters the introduced compressed air. Is pipe-connected to the other input port P2 of the 3-position, 3-port electromagnetic switching valve 867a.

  Here, the output port P3 of the electromagnetic switching valve 867a is connected to a positive / negative pressure pipe line 814a for making positive pressure and negative pressure on the lower portion 86 of the central suction region 80a. The central position of the electromagnetic switching valve 867a is a (spring center) neutral position by the springs S1 and S2. At this time, the electromagnetic solenoid 869V that is set to the negative pressure position 869 by excitation is also set to the positive pressure position 870 by excitation. The electromagnetic solenoid 870P is also in a non-excited state. At this position, both the negative pressure input port P1 and the positive pressure input port P2 are in a blocked state with respect to the output port P3. In this state, the adsorption region 80a can be brought into an atmospheric pressure state (neither positive nor negative pressure state). In order to make the inside of the positive / negative pressure pipe line 814a into a negative pressure state, it is switched to the negative pressure position 869 by excitation of the electromagnetic solenoid 869V of the electromagnetic switching valve 867a (the electromagnetic solenoid 870P is in an unexcited state at this time), Similarly, the positive pressure state is switched to the positive pressure position 870 by excitation of the electromagnetic solenoid 870P (at this time, the electromagnetic solenoid 869V is in the non-excited state). Such excitation, non-excitation, and neutral states of the electromagnetic solenoids 869V and 870P are controlled by the control device 896 to which they are connected.

  As described above, the positive / negative pressure state in the central suction region 80a can be controlled. The other suction regions 80b,..., 80e shown in FIG. 4 are configured in the same manner as the suction region 80a. That is, each negative pressure pipe line 865b,..., 865e that makes the space on the lower portion 86 of the other adsorption regions 80b,..., 80e negative pressure branches from the main negative pressure pipe line 865. Each of the air regulators 863bV,..., 863eV is connected to the input port P1 of each of the three-position, three-port electromagnetic switching valves 867b,. Moreover, each positive pressure piping 866b, ..., 866e which makes the space on the low part 86 of other adsorption | suction area | regions 80b, ..., 80e positive pressure branched from the main positive pressure piping 866, each The air regulator 863bP,..., 863eP and the piping circuit connecting the filters 864b,..., 864e, respectively, and the other input port of the three-position, three-port electromagnetic switching valve 867b,. Pipe connected to P2.

Thus, as described above, the electromagnetic switching valves 867b to 867e connected to the respective positive and negative pressure pipes 814b to 814e are selectively and independently positive or negative pressure or atmospheric pressure based on a command from the control device 896. It can be controlled to be in a state. Moreover, each negative pressure piping 865b, ..., 865e and each positive pressure piping 866b, ..., 866e have each air regulator 863bV, ..., 863eV, 863bP, ..., 863eP. Since they are connected to each other, the control device 896 controls the air regulators 863bV,..., 863eV, 863bP,..., 863eP, so that the suction force of each suction region 80a,. Can be adjusted.
In addition, in order to make a plurality of adsorption | suction area | regions into independent positive / negative pressure and atmospheric pressure states, it does not restrict | limit the number of piping and the piping method of the positive / negative pressure piping.

  When the substrate W is sucked by such a positive / negative pressure control device 186, vacuum suction is performed from the positive / negative pressure holes 87a,. A space surrounded by the partition walls 81a and 82a and the peripheral wall portion 83a and the back surface of the substrate W is set to a negative pressure. Usually, the pressure used when adsorbing the substrate W is 0 Pa or less and −100 Pa or more, preferably −10 Pa or less and −80 Pa or more, and more preferably −20 Pa or less and −50 Pa or more. . In particular, when the pressure is set to −10 Pa or less, the substrate W is not reliably displaced from the work chuck 21 by the movement of the substrate stage 20, and when the pressure is set to −80 Pa or more, the substrate W is surely deformed. Therefore, uneven exposure can be suppressed. Further, when unloading the substrate W, in order to easily separate the substrate W, the space is opened to the atmosphere or positive pressure is introduced from the positive and negative pressure holes 87a,.

  Here, in this embodiment, when adsorbing the substrate W, each air regulator 863aV, so that the pressure in each adsorption region 80a, ..., 80e becomes substantially constant in order to suppress the bending of the substrate W. .., 863 eV is adjusted, and the suction force of each suction region 80 a,..., 80 e is set according to the area. That is, the rectangular suction regions 80c, 80d, and 80e that are sucked according to the orientation and size of the substrate W have a smaller suction area than the annular suction region 80b, and therefore, the suction regions 80c, 80d, and 80e in the suction regions 80c, 80d, and 80e. Pressure increases. For this reason, the suction force for sucking air in the rectangular suction regions 80c, 80d, and 80e is made smaller than the suction force for sucking air in the annular suction region 80b. Similarly, the central suction region 80a, which has a smaller area than the annular suction region 80b, also has a higher pressure than the annular suction region 80b. Therefore, the suction force for sucking the air in the central suction region 80a is changed to the annular suction region 80b. The suction force is smaller than the suction force for sucking the air in the suction region 80b.

  Further, in order to reduce the bending of the substrate W, when the substrate W is sucked, it is gradually performed from the inner central suction region 80a to the outside. That is, the annular adsorption region 80b located on the side away from the center of the substrate W with respect to the central adsorption region 80a is adsorbed after the adsorption of the central adsorption region 80a is started. The rectangular suction regions 80c, 80d, and 80e located on the side away from the center of the substrate W with respect to 80b are sucked after the suction of the annular suction region 80b is started.

  Further, when the substrate W is exposed, it may be performed in a state of being vacuum-sucked by the positive and negative pressure holes 87a,..., 87g. It may be done.

  Therefore, according to the exposure method of the present embodiment, the substrate stage 20 having the suction surface 22 provided with the annular suction region 80b and the rectangular suction regions 80c, 80d, and 80e having a smaller area than the annular suction region 80b. , 80 d of the rectangular suction regions 80 c, 80 d so that the pressure in the annular and rectangular suction regions 80 b,..., 80 e is substantially constant when the substrate W is sucked to the suction surface 22 of the substrate stage 20. , 80e is made smaller than the suction force for sucking the air in the annular suction region 80b, so that the bending of the substrate W can be suppressed and the exposure accuracy can be improved.

  Further, even in the central suction region 80a having a smaller area than the annular suction region 80b, when the substrate W is sucked onto the suction surface 22 of the substrate stage 20, the pressures in the central and annular suction regions 80a and 80b are substantially constant. Since the suction force for sucking the air in the central suction region 80a is made smaller than the suction force for sucking the air in the annular suction region 80b, the deflection of the substrate W is suppressed and the exposure accuracy is improved. can do.

  Further, according to the proximity exposure apparatus 1 of the present embodiment, the positive / negative pressure control device 186 includes the positive / negative pressure pipe lines 814a,..., 814e connected to the suction regions 80a,. Electromagnetic switching valve 867a for connecting and disconnecting with positive pressure piping 866a,..., 866e connected to the source or negative pressure piping 865a,. .., 867e, air regulators 863aV,..., 863eV, 863aP,..., 863eP for adjusting the pressure of air passing through the positive and negative pressure pipes 814a,. 814a,..., 814e, and stop valves 862V and 862P for adjusting the flow rate of air passing through the interior. In the substrate stage 20 provided with the suction surface 22 with the annular suction region 80b and the rectangular suction regions 80c, 80d, and 80e having a smaller area than the annular suction region 80b, the positive / negative pressure control device 186 includes the substrate When adsorbing the substrate W to the adsorption surface 22 of the stage 20, the inside of the rectangular adsorption regions 80c, 80d, 80e so that the pressure in the annular and rectangular adsorption regions 80b, ..., 80e is substantially constant. Since the suction force for sucking the air is controlled to be smaller than the suction force for sucking the air in the annular suction region 80b, the bending of the substrate W is suppressed, and the exposure accuracy can be improved.

  FIG. 6 is a partial block diagram for explaining a modification of the positive / negative pressure control apparatus 186 of the above embodiment. That is, in this modification, instead of providing the air regulators 863aV,..., 863eV in each negative pressure pipe 865a,..., 865e, one-way valves 871a,. Speed controllers 872a,..., 872e (only one-way valve 871c, pressure control valve or speed controller 872c are shown in FIG. 6) are connected to the output port P3 side of electromagnetic switching valves 867a,. ing. Thus, air can be discharged and sucked from the periphery to adjust the negative pressure, and the apparatus can be downsized compared to the case where the air regulators 863aV,.

  In addition, this invention is not limited to each embodiment mentioned above, In the range which does not deviate from the summary of this invention, it can change suitably.

  In the positive / negative pressure control device 186 of the above embodiment, the air regulators 863aV,..., 863eV, 863aP,..., 863eP are used as the pressure control means. A pressure control valve such as a sequence valve, an unload valve, a counter balance valve, or a balancing valve can be applied. In addition, although the electromagnetic switching valves 867a,..., 867e are used as the direction control means, the present invention is not limited to this, and direction control valves such as a check valve, a pilot check valve, and a servo valve can be applied. Further, stop valves 862V and 862P are used as the flow rate control means, but not limited to this, a flow rate control valve or a throttle valve can be applied.

  For example, in each suction area 80a, ..., 80e of the work chuck 21 of the substrate stage 20, the pressure in each suction area 80a, ..., 80e is detected by a pressure sensor, and each partition wall 81a, 82a or peripheral edge is detected. The air leaking from the part 83a and the substrate W may be detected using a pressure sensor. Thereby, the pressure value may be fed back to the control unit 896, and the control unit 896 may control the pressure control unit, the direction control unit, and the flow rate control unit.

DESCRIPTION OF SYMBOLS 1 Proximity exposure apparatus 10 Mask stage 12 Mask holding frame (mask holding part)
14 chuck part 20 substrate stage 21 work chuck 22 suction surface 80a central suction area 80b annular suction areas 80c, 80d, 80e rectangular suction area 81a first partition wall 82a second partition wall 186 positive / negative pressure control device 814a , 814e Positive / negative pressure piping 862V, 862P Stop valve (flow control means)
863aV, ..., 863eV, 863aP, ..., 863eP Air regulator (pressure control means)
865a, ..., 865e Negative pressure piping 866a, ..., 866e Positive pressure piping 867a, ..., 867e Electromagnetic switching valve (direction control means)
M Mask W Glass substrate (material to be exposed)

Claims (5)

A mask holding unit for holding a mask having a pattern to be exposed, a substrate holding unit having a suction surface for sucking and holding a substrate as an exposed material, and a substrate for holding exposure light on the substrate holding unit. And an illumination optical system that irradiates the substrate holding portion with a first adsorption region partitioned by a partition wall that can come into contact with the back surface of the substrate; An exposure method in which the pattern of the mask is exposed and transferred onto the substrate by an exposure apparatus in which at least a second suction region having a smaller area than the one suction region is formed,
When adsorbing the substrate on the adsorption surface of the substrate holding unit, a suction force for sucking air in the second adsorption region is set so that the pressure in the first and second adsorption regions is substantially constant. An exposure method characterized by making the suction force smaller than the suction force for sucking air in the first suction region.   A method for manufacturing a substrate, comprising using the exposure method according to claim 1. A mask holding unit for holding a mask having a pattern to be exposed;
A substrate holding part having an adsorption surface for adsorbing and holding a substrate as an exposed material;
An illumination optical system for irradiating the substrate held by the substrate holding unit with exposure light through the mask;
A positive / negative pressure control device for selectively and independently setting the inside of each adsorption region to a positive, negative pressure and atmospheric pressure state;
An exposure apparatus that exposes and transfers the pattern of the mask onto the substrate,
On the suction surface of the substrate holding part, a first suction region partitioned by a partition wall capable of contacting the back surface of the substrate, a second suction region having a smaller area than the first suction region, Is at least formed,
The positive / negative pressure control device includes:
Direction control means for connecting and shutting off the positive and negative pressure pipes connected to the respective adsorption regions and the positive pressure pipe connected to the compressed air source or the negative pressure pipe connected to the negative pressure generating source When,
Pressure control means for adjusting the pressure of air passing through the inside of the positive and negative pressure pipes;
Flow rate control means for adjusting the flow rate of air passing through the inside of the positive and negative pressure pipes;
With
The positive / negative pressure control device is configured to adjust the pressure in the second adsorption region so that the pressure in the first and second adsorption regions is substantially constant when the substrate is adsorbed on the adsorption surface of the substrate holding unit. An exposure apparatus that controls a suction force for sucking air to be smaller than a suction force for sucking air in the first suction region.   The pressure in each of the adsorption regions is detected by a pressure sensor, and at least one of the direction control means, the pressure control means, and the flow rate control means is controlled based on the detected pressure. 4. The exposure apparatus according to 3.   4. The exposure apparatus according to claim 3, wherein the direction control means is an electromagnetic switching valve, the pressure control means is a stop valve, and the flow rate control means is an air regulator.

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