JP2011179064A - Plating device - Google Patents
Plating device Download PDFInfo
- Publication number
- JP2011179064A JP2011179064A JP2010043870A JP2010043870A JP2011179064A JP 2011179064 A JP2011179064 A JP 2011179064A JP 2010043870 A JP2010043870 A JP 2010043870A JP 2010043870 A JP2010043870 A JP 2010043870A JP 2011179064 A JP2011179064 A JP 2011179064A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plating tank
- cathode
- plated
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 127
- 230000002093 peripheral effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 5
- 239000004005 microsphere Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
Description
本発明は、微小球へのめっきに好適なめっき装置に関するものである。 The present invention relates to a plating apparatus suitable for plating on microspheres.
近年、半導体パッケージの高密度化に伴い、ＢＧＡ（Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ）に代表されるエリアアレイ端子型パッケージの端子等に、はんだめっき層を形成した複合ボールが用いられるようになってきた。この用途においては、直径５００μｍ以下のボールが要求されている。
このような微小球にめっき層を、めっき槽を用いて形成するためには、めっき処理中のボール同士の付着を防止するために、ボールの分散性を向上させる必要がある。
In recent years, with an increase in the density of semiconductor packages, composite balls in which a solder plating layer is formed have been used for terminals of area array terminal type packages represented by BGA (Ball Grid Array). In this application, a ball having a diameter of 500 μm or less is required.
In order to form a plating layer on such microspheres using a plating tank, it is necessary to improve the dispersibility of the balls in order to prevent adhesion of the balls during the plating process.
たとえば、特許文献１には、陰極を槽内内周部に、陽極を槽内中央部に配置した垂直軸で水平方向に回転可能な密閉されためっき槽を高速回転させることで、遠心力により被めっき物を陰極へ集め、めっきを行なう方法が開示されている。この方法においては、正転、逆転を周期的に繰り返すことで、ボールの分散性を向上させ、ボール同士の付着を防止している。 For example, Patent Document 1 discloses that a centrifugal plating force is used by rotating a sealed plating tank that can be rotated in a horizontal direction on a vertical axis in which a cathode is disposed in an inner periphery of a tank and an anode is disposed in a central part of the tank. A method for collecting an object to be plated on a cathode and performing plating is disclosed. In this method, the forward and reverse rotations are periodically repeated to improve the dispersibility of the balls and prevent the balls from sticking to each other.
また、特許文献２には、特許文献１と基本構造が類似するめっき技術が開示され、被めっき物と陰極との接触機会を増すことで、均一なめっき層を形成することが提案されている。具体的には、陰極として配設されるコンタクトリングの形状を、コンタクトリングの内周面が下方に行くにつれて小径となるテーパ状とすることで、均一なめっき層が形成できるという効果を得ている。 Patent Document 2 discloses a plating technique having a basic structure similar to that of Patent Document 1, and it is proposed to form a uniform plating layer by increasing the contact opportunity between an object to be plated and a cathode. . Specifically, the shape of the contact ring disposed as the cathode is tapered so that the inner peripheral surface of the contact ring becomes smaller in diameter, thereby obtaining an effect that a uniform plating layer can be formed. Yes.
本発明者の検討によると、複数のボールにめっき層を形成するには、特許文献２のような陰極にテーパ形状を設けためっき槽を用いても、ボールと陰極との接触機会が十分に確保されず、均一で平滑なめっき層を形成するには問題があった。 According to the study of the present inventor, in order to form a plating layer on a plurality of balls, even when a plating tank having a tapered shape on the cathode as in Patent Document 2 is used, there is sufficient contact between the balls and the cathode. There is a problem in forming a uniform and smooth plating layer that is not secured.
本発明の目的は、垂直軸で水平回転可能なめっき槽を用いためっき装置において、めっき効率を改善し、複数の被めっき物に均一なめっき層を形成できるめっき装置を提供することである。 An object of the present invention is to provide a plating apparatus that can improve plating efficiency and form a uniform plating layer on a plurality of objects to be plated in a plating apparatus using a plating tank that can rotate horizontally around a vertical axis.
本発明者は、垂直軸で水平回転可能なめっき槽を用いたとき、めっき槽の内周部に所定の傾斜部を設けることで、めっき槽回転時の遠心力が生じたときの、複数の被めっき物の陰極への接触機会を増加させ、複数の被めっき物に均一なめっき層が形成できることを見出し本発明に到達した。 The present inventor uses a plating tank that can rotate horizontally on a vertical axis, and by providing a predetermined inclined part on the inner peripheral part of the plating tank, a plurality of centrifugal forces are generated when the plating tank rotates. The present inventors have found that a uniform plating layer can be formed on a plurality of objects to be plated by increasing the chances of the objects to be contacted with the cathode.
すなわち本発明は、垂直軸で水平回転可能なめっき槽の内周部が、円盤状の底部に接続し前記底部を拡張するように続く第１傾斜部と、該第１傾斜部に接続する円筒部と、該円筒部に接続し前記円筒部を縮小するように続く第２傾斜部とを具備し、前記円筒部の少なくとも一部に陰極を配設するめっき装置である。
前記めっき槽は、前記第２傾斜部で形成される開口部に接続するように上蓋を具備することが好ましい。
また、前記上蓋は、前記めっき槽中央部に配設された陽極に向かって底部と平行部を有することが好ましい。
That is, the present invention provides a first inclined portion in which an inner peripheral portion of a plating tank that is horizontally rotatable on a vertical axis is connected to a disc-shaped bottom portion so as to expand the bottom portion, and a cylinder connected to the first inclined portion. And a second inclined portion connected to the cylindrical portion and continuing to reduce the cylindrical portion, and a cathode is provided on at least a part of the cylindrical portion.
The plating tank preferably includes an upper lid so as to be connected to the opening formed by the second inclined portion.
Moreover, it is preferable that the said upper cover has a bottom part and a parallel part toward the anode arrange | positioned in the said plating tank center part.
本発明のめっき装置によれば、微小球のような小物に均一なめっき層を形成することができる。 According to the plating apparatus of the present invention, a uniform plating layer can be formed on a small object such as a microsphere.
上述したように、本発明の重要な特徴は、垂直軸で水平回転可能なめっき槽の内周部が、円盤状の底部に接続し前記底部を拡張するように続く第１傾斜部と、該第１傾斜部に接続し一部に陰極を配設する円筒部と、該円筒部に接続し前記円筒部を縮小するように続く第２傾斜部を具備するめっき槽の構成を採用したことにある。以下、本発明のめっき装置について詳しく説明する。図１は、本発明のめっき装置の一例を示す模式図である。 As described above, an important feature of the present invention is that the inner peripheral portion of the plating tank that can be horizontally rotated on the vertical axis is connected to the disc-shaped bottom portion and extends so as to expand the bottom portion, Adopting a configuration of a plating tank that includes a cylindrical portion that is connected to the first inclined portion and in which a cathode is disposed in part, and a second inclined portion that is connected to the cylindrical portion and continues to reduce the cylindrical portion. is there. Hereinafter, the plating apparatus of the present invention will be described in detail. FIG. 1 is a schematic view showing an example of a plating apparatus of the present invention.
本発明のめっき装置は、垂直軸１に支持された水平回転可能なめっき槽２の内周部が円盤状の底部に接続し前記底部を拡張するように続く第１傾斜部２ｂと、該第１傾斜部２ｂに接続し一部に陰極を配設する円筒部２ｃと、該円筒部２ｃに接続し前記円筒部２ｃを縮小するように続く第２傾斜部２ｄを具備し、めっき槽中央部の上方には陽極３を配設しており、めっき槽２にはめっき液４を保持する。 The plating apparatus of the present invention includes a first inclined portion 2b that continues so that an inner peripheral portion of a horizontally rotatable plating tank 2 supported by a vertical shaft 1 is connected to a disk-shaped bottom portion and expands the bottom portion, 1 comprises a cylindrical portion 2c connected to the inclined portion 2b and partially provided with a cathode, and a second inclined portion 2d connected to the cylindrical portion 2c and continuing to reduce the cylindrical portion 2c. An anode 3 is disposed above the plating tank 2, and a plating solution 4 is held in the plating tank 2.
本発明のめっき装置は、めっき槽２の内周部が円盤状の底部２ａに接続し、前記底部２ａを拡張するような第１傾斜部２ｂを具備する。
たとえば、単純な円筒形状のめっき槽を用いてめっきをする場合には、高速回転時に遠心力により被めっき物５が円周部底部に溜まり、陰極に接触しない被めっき物５が出てくるため、全ての被めっき物５に均一なめっき層を形成することが困難になる。このため、本発明のめっき装置は、被めっき物５が円周部底部に溜まることを防ぎ、全ての被めっき物５を陰極に接触させるために、めっき槽２の内周部に第１傾斜部２ｂを設ける。
また、本発明のめっき装置は、めっき槽２の内周部に第１傾斜部２ｂを設けることにより、めっき槽２を高速で水平回転させたときに、遠心力によってめっき液４および被めっき物５を円筒部２ｃの一部に配設した陰極に、スムーズに移動させることができる。これにより、全ての被めっき物５に通電する機会が均等になり、めっき効率が改善され、均一なめっき層を形成することができる。
The plating apparatus of the present invention includes a first inclined portion 2b in which the inner peripheral portion of the plating tank 2 is connected to a disk-like bottom portion 2a and expands the bottom portion 2a.
For example, when plating is performed using a simple cylindrical plating tank, the object to be plated 5 accumulates at the bottom of the circumference due to centrifugal force during high-speed rotation, and the object to be plated 5 that does not contact the cathode comes out. It becomes difficult to form a uniform plating layer on all the objects to be plated 5. For this reason, the plating apparatus of the present invention prevents the object to be plated 5 from accumulating at the bottom of the circumferential portion and makes the first inclined portion in the inner peripheral portion of the plating tank 2 in order to bring all the objects to be plated 5 into contact with the cathode. A portion 2b is provided.
Further, the plating apparatus of the present invention is provided with the first inclined portion 2b on the inner peripheral portion of the plating tank 2, so that when the plating tank 2 is horizontally rotated at a high speed, the plating solution 4 and the object to be plated by centrifugal force. 5 can be smoothly moved to the cathode disposed in a part of the cylindrical portion 2c. Thereby, the opportunity to energize all the objects to be plated 5 is equalized, the plating efficiency is improved, and a uniform plating layer can be formed.
第１傾斜部２ｂの傾斜角αは、０°を超え９０°未満で、被めっき物の処理量やめっき槽２の回転速度等により適宜選択することができる。また、底部接続側内径と円筒部接続側内径の差は底部２ａの半径未満で適宜選択することができる。好ましくは、傾斜角αを４５°とし、底部接続側内径と円筒部接続側内径の差を底部２ａの半径の１０％とすることが好ましい。 The inclination angle α of the first inclined portion 2b is more than 0 ° and less than 90 °, and can be appropriately selected depending on the processing amount of the object to be plated, the rotation speed of the plating tank 2, and the like. Further, the difference between the bottom connection side inner diameter and the cylinder connection side inner diameter can be appropriately selected within a radius of the bottom 2a. Preferably, the inclination angle α is set to 45 °, and the difference between the inner diameter of the bottom connection side and the inner diameter of the cylinder connection side is preferably 10% of the radius of the bottom 2a.
本発明のめっき装置は、第１傾斜部２ｂに接続し円筒部２ｃの少なくとも一部に陰極を配設する。これにより、被めっき物５が陰極に接触したときに通電されてめっき層を形成する。
被めっき物５は、めっき槽２の高速回転の遠心力により、めっき槽２の半径方向に移動していくのと同時に、めっき槽２の内周部付近ではめっき液のせり上がりにより被めっき物５もせり上がり、めっき槽２の底面から離れてしまう。本発明のめっき装置は、高速回転時に被めっき物５が移動して留まろうとする位置である、第１傾斜部２ｂに接続する円筒部２ｃの少なくとも一部に陰極を配設することにより、被めっき物５の陰極への接触機会を増加させることができ、均一なめっき層を形成することが可能となる。
The plating apparatus of the present invention is connected to the first inclined portion 2b and has a cathode disposed on at least a part of the cylindrical portion 2c. Thereby, it supplies with electricity when the to-be-plated object 5 contacts a cathode, and forms a plating layer.
The object to be plated 5 moves in the radial direction of the plating tank 2 by the centrifugal force of the high-speed rotation of the plating tank 2, and at the same time, the plating object rises near the inner periphery of the plating tank 2. 5 rises and is separated from the bottom surface of the plating tank 2. In the plating apparatus of the present invention, by disposing a cathode on at least a part of the cylindrical portion 2c connected to the first inclined portion 2b, which is a position where the workpiece 5 moves and stays at high speed rotation, It is possible to increase the chance of contact of the workpiece 5 with the cathode and to form a uniform plating layer.
めっき槽２の高速回転時に陰極が被めっき物に覆われず、めっき液に接触した状態で通電が行われると、陰極自体にめっき皮膜が形成される。陰極がチタンやステンレスなどの場合、形成されためっき皮膜が剥がれるため、被めっき物５へ付着したり、被めっき物５のめっき層中に取り込まれ、めっき膜質の不具合を引き起こす場合がある。
このため、円筒部２ｃの少なくとも一部に配設する陰極は、めっき槽２の高速回転時に被めっき物５で覆われることが好ましい。例えば、比重の軽い被めっき物５を少量めっきする場合には、めっき槽２の高速回転時において、被めっき物が円筒部２ｃの上方に移動するので、陰極を円筒部２ｃ上部に設置し、被めっき物５で覆えるようにするとよい。また、大量の被めっき物を処理する場合には、円筒部２ｃの全てを陰極にすることが好ましく、円筒部２ｃに配設する陰極の高さは適宜選択できる。
めっき槽２の円筒部２ｃの少なくとも一部に配置する陰極には、例えばチタン、真ちゅう、ステンレス、銅などが使用できる。
When the plating tank 2 is rotated at a high speed and the cathode is not covered with the object to be plated and is energized in contact with the plating solution, a plating film is formed on the cathode itself. When the cathode is made of titanium, stainless steel, or the like, the formed plating film is peeled off, so that it may adhere to the object to be plated 5 or be taken into the plating layer of the object to be plated 5 to cause a defect in the plating film quality.
For this reason, it is preferable that the cathode disposed on at least a part of the cylindrical portion 2 c is covered with the object to be plated 5 when the plating tank 2 rotates at high speed. For example, when plating a small amount of the object 5 having a light specific gravity, the object to be plated moves above the cylindrical part 2c when the plating tank 2 is rotated at a high speed. It is preferable to cover the object 5 to be plated. Moreover, when processing a lot of to-be-plated things, it is preferable to make all the cylindrical parts 2c into a cathode, and the height of the cathode arrange | positioned in the cylindrical part 2c can be selected suitably.
For example, titanium, brass, stainless steel, copper, or the like can be used for the cathode disposed in at least a part of the cylindrical portion 2c of the plating tank 2.
本発明のめっき装置は、前記円筒部２ｃを縮小するような第２傾斜部２ｄを具備する。
たとえば、単純な円筒形状のめっき槽を用いてめっきをする場合には、高速回転時に遠心力により被めっき物５が円周部上方まで移動することで、陰極に接触しない被めっき物５が出てくるため、全ての被めっき物５に均一なめっき層を形成することが困難になる。このため、本発明のめっき装置は、被めっき物５が円周部上方まで移動することを防ぎ、全ての被めっき物５を陰極に接触させるために、めっき槽２の内周部に第２傾斜部２ｄを設ける。
また、本発明のめっき装置は、めっき槽２の内周部に第２傾斜部２ｄを設けることにより、めっき槽を反転したときに、めっき液の流動により発生する被めっき物５の拡散が生じても、速やかに再び被めっき物５を円筒部２ｃの一部に配設した陰極に移動させることができる。これにより、全ての被めっき物５に通電する機会が均等になり、めっき効率が改善され、均一なめっき層を形成することができる。
The plating apparatus of the present invention includes a second inclined portion 2d that reduces the cylindrical portion 2c.
For example, when plating is performed using a simple cylindrical plating tank, the workpiece 5 that does not come into contact with the cathode is brought out by moving the workpiece 5 to the upper part of the circumference by centrifugal force during high-speed rotation. Therefore, it becomes difficult to form a uniform plating layer on all the objects to be plated 5. For this reason, the plating apparatus of this invention prevents the to-be-plated object 5 from moving to the circumference part upper part, and in order to make all the to-be-plated objects 5 contact a cathode, it is 2nd in the inner peripheral part of the plating tank 2. FIG. An inclined portion 2d is provided.
Moreover, in the plating apparatus of the present invention, by providing the second inclined portion 2d on the inner peripheral portion of the plating tank 2, when the plating tank is reversed, diffusion of the object to be plated 5 caused by the flow of the plating solution occurs. However, the object to be plated 5 can be quickly moved again to the cathode disposed in a part of the cylindrical portion 2c. Thereby, the opportunity to energize all the objects to be plated 5 is equalized, the plating efficiency is improved, and a uniform plating layer can be formed.
第２傾斜部２ｄの傾斜角βは、０°を超え９０°未満で、被めっき物５の処理量やめっき槽２の回転速度等により適宜選択することができる。また、円筒部接続側内径と開口部側内径の差は底部２ａの半径未満で適宜選択することができる。好ましくは、傾斜角βを４５°とし、上部開口側内径と円筒部接続側内径の差を底部２ａの半径の１０％とすることが好ましい。 The inclination angle β of the second inclined portion 2d is more than 0 ° and less than 90 °, and can be appropriately selected depending on the amount of the object 5 to be plated, the rotational speed of the plating tank 2, and the like. Further, the difference between the inner diameter of the cylindrical portion connecting side and the inner diameter of the opening portion can be appropriately selected within a radius of the bottom portion 2a. Preferably, the inclination angle β is set to 45 °, and the difference between the inner diameter on the upper opening side and the inner diameter on the cylindrical portion connection side is preferably 10% of the radius of the bottom portion 2a.
垂直軸１は、めっき槽底部２ａを支持している。垂直軸１は、正回転と逆回転することができるようになっている。めっき槽２には、めっき液に不活性な材料、例えばプラスチックやステンレス表面を樹脂加工したものなどを使用できる。めっき槽２は、特許文献１や特許文献２でめっき槽に配設されるポーラスリングのような、めっき槽の外周部の隙間をなくすことが好ましい。その理由は、めっき処理中に、被めっき物を紛失せず、また、めっき液の排出をさせないことで、高価なめっき液を大量に使用することなくめっきを行なうためである。 The vertical shaft 1 supports the plating tank bottom 2a. The vertical shaft 1 can be rotated in the forward direction and the reverse direction. The plating tank 2 can be made of a material inert to the plating solution, for example, plastic or stainless steel surface processed with resin. It is preferable that the plating tank 2 eliminates a gap in the outer peripheral portion of the plating tank such as the porous ring disposed in the plating tank in Patent Document 1 and Patent Document 2. The reason is that plating is performed without using a large amount of expensive plating solution by not losing the object to be plated and not discharging the plating solution during the plating process.
めっき２槽には、第２傾斜部で形成される開口部に接続するように、上蓋を具備することが好ましい。めっき槽２の高速回転時には、めっき液のせり上がりが起こる。めっき液がせり上がることで、陽極３付近のめっき液面が低くなるため、陽極３がめっき液から露出する場合がある。これにより、陽極３はめっき液との接触面積が小さくなるため、通電時に電圧が上昇し、安定した条件でめっきを行なうことができず、均一なめっき皮膜が得られなくなることがある。
このため、本発明のめっき装置では、めっき液のせり上がりを抑制するため、図１に示すような、第２傾斜部２ｄに接続するように上蓋６を設けることが好ましい。このとき、上蓋６には、めっき槽２中央部に配設された陽極３へ向かって底部と平行部を設けることが好ましい。
It is preferable that the plating 2 tank is provided with an upper lid so as to be connected to the opening formed by the second inclined portion. When the plating tank 2 rotates at high speed, the plating solution rises. As the plating solution rises, the surface of the plating solution in the vicinity of the anode 3 is lowered, so that the anode 3 may be exposed from the plating solution. As a result, since the contact area of the anode 3 with the plating solution is reduced, the voltage increases during energization, and plating cannot be performed under stable conditions, and a uniform plating film may not be obtained.
For this reason, in the plating apparatus of this invention, in order to suppress the rising of a plating solution, it is preferable to provide the upper cover 6 so that it may connect to the 2nd inclination part 2d as shown in FIG. At this time, the upper lid 6 is preferably provided with a bottom portion and a parallel portion toward the anode 3 disposed in the central portion of the plating tank 2.
１．垂直軸
２．めっき槽
２ａ．めっき槽底部
２ｂ．第１傾斜部
２ｃ．円筒部
２ｄ．第２傾斜部
３．陽極
４．めっき液
５．被めっき物
６．上蓋
1. Vertical axis Plating tank 2a. Plating tank bottom 2b. 1st inclination part 2c. Cylindrical part 2d. 2. Second inclined part Anode 4. 4. Plating solution Material to be plated Top lid
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010043870A JP5713226B2 (en) | 2010-03-01 | 2010-03-01 | Plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010043870A JP5713226B2 (en) | 2010-03-01 | 2010-03-01 | Plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011179064A true JP2011179064A (en) | 2011-09-15 |
| JP5713226B2 JP5713226B2 (en) | 2015-05-07 |
Family
ID=44690889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010043870A Active JP5713226B2 (en) | 2010-03-01 | 2010-03-01 | Plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5713226B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014169488A (en) * | 2013-03-05 | 2014-09-18 | Hitachi Metals Ltd | Plating device |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08239799A (en) * | 1995-02-28 | 1996-09-17 | C Uyemura & Co Ltd | Rotary plating device for small articles |
| JPH08296094A (en) * | 1995-04-26 | 1996-11-12 | Kyocera Corp | Rotary plating device and rotary plating method |
| WO1998046811A1 (en) * | 1997-04-17 | 1998-10-22 | Sekisui Chemical Co., Ltd. | Conductive particles and method and device for manufacturing the same, anisotropic conductive adhesive and conductive connection structure, and electronic circuit components and method of manufacturing the same |
| JPH1192994A (en) * | 1997-09-16 | 1999-04-06 | Sumitomo Special Metals Co Ltd | Solder plating method for very small metallic ball |
| JPH11279800A (en) * | 1998-03-26 | 1999-10-12 | Hitachi Metals Ltd | Method for plating small-sized electronic parts |
| JPH11317416A (en) * | 1998-03-05 | 1999-11-16 | Tokyo Tungsten Co Ltd | Composite microball, and manufacture of the same and device thereof |
| JP2002322591A (en) * | 2001-04-25 | 2002-11-08 | Sekisui Chem Co Ltd | Method for plating fine particle, electrically conductive fine particle and connected structure |
| JP2003328195A (en) * | 2002-05-16 | 2003-11-19 | Hitachi Metals Ltd | Dummy ball for barrel plating |
| JP2006022399A (en) * | 2004-06-07 | 2006-01-26 | Taiyo Kagaku Kogyo Kk | Plating device, plating method and vessel for plating |
| JP2006037184A (en) * | 2004-07-28 | 2006-02-09 | Murata Mfg Co Ltd | Plating device |
| JP2006274412A (en) * | 2005-03-30 | 2006-10-12 | Taiyo Yuden Co Ltd | Rotary plating apparatus |
| JP2008013815A (en) * | 2006-07-06 | 2008-01-24 | C Uyemura & Co Ltd | Surface treatment device for small parts |
| WO2008081504A1 (en) * | 2006-12-27 | 2008-07-10 | C.Uyemura & Co., Ltd. | Surface treatment apparatus |
| JP2009065005A (en) * | 2007-09-07 | 2009-03-26 | Panasonic Corp | Manufacturing method of chip-like electronic component |
-
2010
- 2010-03-01 JP JP2010043870A patent/JP5713226B2/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08239799A (en) * | 1995-02-28 | 1996-09-17 | C Uyemura & Co Ltd | Rotary plating device for small articles |
| JPH08296094A (en) * | 1995-04-26 | 1996-11-12 | Kyocera Corp | Rotary plating device and rotary plating method |
| WO1998046811A1 (en) * | 1997-04-17 | 1998-10-22 | Sekisui Chemical Co., Ltd. | Conductive particles and method and device for manufacturing the same, anisotropic conductive adhesive and conductive connection structure, and electronic circuit components and method of manufacturing the same |
| JPH1192994A (en) * | 1997-09-16 | 1999-04-06 | Sumitomo Special Metals Co Ltd | Solder plating method for very small metallic ball |
| JPH11317416A (en) * | 1998-03-05 | 1999-11-16 | Tokyo Tungsten Co Ltd | Composite microball, and manufacture of the same and device thereof |
| JPH11279800A (en) * | 1998-03-26 | 1999-10-12 | Hitachi Metals Ltd | Method for plating small-sized electronic parts |
| JP2002322591A (en) * | 2001-04-25 | 2002-11-08 | Sekisui Chem Co Ltd | Method for plating fine particle, electrically conductive fine particle and connected structure |
| JP2003328195A (en) * | 2002-05-16 | 2003-11-19 | Hitachi Metals Ltd | Dummy ball for barrel plating |
| JP2006022399A (en) * | 2004-06-07 | 2006-01-26 | Taiyo Kagaku Kogyo Kk | Plating device, plating method and vessel for plating |
| JP2006037184A (en) * | 2004-07-28 | 2006-02-09 | Murata Mfg Co Ltd | Plating device |
| JP2006274412A (en) * | 2005-03-30 | 2006-10-12 | Taiyo Yuden Co Ltd | Rotary plating apparatus |
| JP2008013815A (en) * | 2006-07-06 | 2008-01-24 | C Uyemura & Co Ltd | Surface treatment device for small parts |
| WO2008081504A1 (en) * | 2006-12-27 | 2008-07-10 | C.Uyemura & Co., Ltd. | Surface treatment apparatus |
| JP2009065005A (en) * | 2007-09-07 | 2009-03-26 | Panasonic Corp | Manufacturing method of chip-like electronic component |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014169488A (en) * | 2013-03-05 | 2014-09-18 | Hitachi Metals Ltd | Plating device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5713226B2 (en) | 2015-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5598754B2 (en) | Plating equipment | |
| JP5367924B1 (en) | Solder-coated ball and method for manufacturing the same | |
| JP2008019496A (en) | Electrolytically plating apparatus and electrolytically plating method | |
| CN108291325B (en) | Substrate holding device | |
| KR102069262B1 (en) | Microelectronic substrate electro processing system | |
| JP2001319994A (en) | Semiconductor package and its manufacturing method | |
| JP6332556B2 (en) | Manufacturing method of semiconductor device | |
| JP5713226B2 (en) | Plating equipment | |
| US11469134B2 (en) | Plating chuck | |
| US9050654B2 (en) | Method of manufacturing composite ball for electronic parts | |
| JP2023553742A (en) | Cup-type chuck of substrate holding device and substrate holding device | |
| JP2010015774A (en) | Ion implantation apparatus | |
| WO2020195787A1 (en) | Method for manufacturing cylindrical sputtering target | |
| JP4023526B2 (en) | Method for producing fine metal sphere | |
| US8916003B2 (en) | Wafer scrubber | |
| JP4313765B2 (en) | Plating apparatus and plating method | |
| KR101381632B1 (en) | Apparatus to plate substrate | |
| CN208588901U (en) | A kind of infiltration type exposure scan bearing table device | |
| JP2018049985A (en) | Substrate processing apparatus and substrate processing method | |
| JP2011157599A (en) | Plating apparatus | |
| JPH1192994A (en) | Solder plating method for very small metallic ball | |
| CN219547134U (en) | Semiconductor electroplating equipment | |
| CN219731027U (en) | Semiconductor rack for semiconductor tin plating | |
| KR101347006B1 (en) | Vertical plating equipment and plating method thereof | |
| JP2012025975A (en) | Plating equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130212 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140121 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140410 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140602 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140829 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141128 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20141205 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150213 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150226 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5713226 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R154 | Certificate of patent or utility model (reissue) |
Free format text: JAPANESE INTERMEDIATE CODE: R154 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |