CN219547134U - Semiconductor electroplating equipment - Google Patents

Abstract

The utility model provides a semiconductor electroplating device, which comprises an electroplating cavity and a prewetting cavity, wherein the prewetting cavity comprises a base, a silica gel pad, a plurality of guide posts and a plurality of plastic blocks, wherein the silica gel pad, the guide posts and the plastic blocks are positioned on the base, the guide posts, the silica gel pad and the plastic blocks are distributed at intervals along the circumferential direction of a wafer to be plated, the silica gel pad and the plastic blocks are positioned at the inner sides of surrounding areas of the guide posts, the plastic blocks are positioned between the guide posts and the silica gel pad which are adjacently arranged, and the height of the plastic blocks is lower than that of the silica gel pad. According to the improved structural design of the semiconductor electroplating equipment, the cushion block made of plastic is arranged between the guide post and the silica gel pad, so that when the position of the wafer is slightly deviated, one side of the wafer is lapped on the plastic block and can smoothly slide down to the correct position, and the height of the plastic block is slightly lower than that of the silica gel pad, so that the fixing effect of the silica gel pad on the wafer is not influenced, the tolerance capability of a machine to the position of the wafer is improved, the alarm probability of the machine is reduced, and the breaking risk is reduced.

Description

Semiconductor electroplating equipment

Technical Field

The utility model relates to the technical field of semiconductor manufacturing, in particular to semiconductor equipment, and especially relates to semiconductor electroplating equipment.

Background

Electroplating refers to a process of plating a thin layer of other metals or alloys on the surface of a workpiece by utilizing the electrolysis principle, thereby playing roles of preventing metal oxidation (such as rust), improving wear resistance, conductivity, reflectivity, corrosion resistance (such as copper sulfate) and improving attractiveness. The method has the advantages of high plating efficiency, suitability for large-area metal wire laying, thicker process and the like, and is widely applied to the manufacture of partial metal layers in semiconductors. For example, in the back-end of the line package manufacturing process, electroplating processes are often used to make the metal layer and metal bump on the substrate surface.

Generally, before the electroplating operation, the wafer is pre-lubricated in the pre-wetting chamber to form a water film on the surface of the wafer, so as to improve the electroplating quality. In order to improve the wetting efficiency and the wetting uniformity, the wafer is driven to rotate at a high speed by the rotation of the bearing device in the wetting process. A schematic partial structure of a wetting chamber of a conventional semiconductor electroplating apparatus is shown in fig. 1, and includes a base 11, a silica gel pad 12 disposed on the base 11, and a guide post 13. When the robot arm places the wafer 14 on the base 11, the guide posts 13 clamp the wafer 14 on the outer side, preventing the wafer 14 from being thrown out when rotating at high speed, and the silica gel pad 13 prevents the wafer 14 from being relatively displaced when rotating by friction force. However, in actual operation, the mechanical arm always has errors in picking and placing, when the position of the wafer 14 is slightly deviated, the friction resistance of one end of the wafer 14 on the silica gel pad 12 is large, so that the guide post 13 fails, the wafer 14 cannot normally slide to the correct position, and the wafer is easy to alarm or fly out to break when rotating at a high speed.

It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present utility model and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the utility model section.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present utility model is to provide a semiconductor electroplating apparatus, which is used for solving the problems that in the pre-wetting chamber of the existing electroplating apparatus, errors occur when a mechanical arm picks up and places a wafer, when the position of the wafer is slightly deviated, one end of the wafer is lapped on a silica gel pad, the friction resistance is large, and the guide post is invalid, the wafer cannot normally slide to a correct position, so that the wafer is alarmed or flies out and breaks when rotating at a high speed.

In order to achieve the above and other related objects, the present utility model provides a semiconductor electroplating apparatus, which includes an electroplating chamber and a pre-wetting chamber, wherein the pre-wetting chamber includes a base, and a silica gel pad, a guide post and a plastic block disposed on the base, the guide post, the silica gel pad and the plastic block are all plural, the guide posts are distributed at intervals along a circumferential direction of a wafer to be plated, the silica gel pad and the plastic block are disposed inside an area surrounded by the guide posts, the plastic block is disposed between the guide post and the silica gel pad, and a height of the plastic block is lower than a height of the silica gel pad.

Optionally, the silica gel pad, the guide post and the plastic block are fixed on the base through the base.

Optionally, the silica gel pad, the guide post, the plastic block and the base are of an integrated structure.

Optionally, a groove is formed in the base, and the bump at the bottom of the base is embedded in the groove of the base.

Optionally, the plastic block is a PP material block.

Optionally, the height difference between the plastic block and the silica gel pad is 0.05-0.2 mm.

Optionally, the guide post is a circular post with a conical top, the silica gel pad is a cylindrical pad, and the plastic block is a polygonal post.

Optionally, in the silica gel pad, the guide post and the plastic block that are located same side and close to setting, the interval of plastic block and guide post is less than the interval of plastic block and silica gel pad.

Optionally, a carrier is disposed in the pre-wetting chamber, the base is located on the carrier, and the carrier is connected with the rotating device.

Optionally, the semiconductor electroplating device further comprises a cleaning cavity and a transfer cavity, wherein the electroplating cavity, the prewetting cavity and the cleaning cavity are all connected with the transfer cavity, and a mechanical arm is arranged in the transfer cavity.

As described above, the semiconductor electroplating apparatus of the present utility model has the following advantageous effects: according to the improved structural design of the semiconductor electroplating equipment, the cushion block made of plastic is arranged between the guide post and the silica gel pad, which are arranged close to the prewetting cavity, so that when the position of the wafer is slightly deviated, one side of the wafer is lapped on the plastic block and can smoothly slide down to the correct position, and the height of the plastic block is slightly lower than that of the silica gel pad, so that the fixing effect of the silica gel pad on the wafer is not influenced, the tolerance capability of the machine on the position of the wafer is improved, the alarm probability of the machine is reduced, and the breaking risk is reduced.

Drawings

Fig. 1 is a schematic view showing a partial structure of a carrying device of a pre-wetting chamber of a semiconductor electroplating apparatus in the prior art.

Fig. 2 is a schematic view showing an exemplary structure of a semiconductor electroplating apparatus according to the present utility model.

Fig. 3 is a schematic view showing a partial structure of a carrying device of a pre-wetting chamber of a semiconductor electroplating apparatus according to the present utility model.

Fig. 4 is a schematic diagram showing automatic reset of the semiconductor electroplating apparatus according to the present utility model when a wafer is dislocated.

Fig. 5 is a schematic view showing an exemplary partial structure of a pre-wetting chamber of a semiconductor electroplating apparatus according to the present utility model.

Fig. 6 is a schematic view showing an exemplary partial structure of an electroplating chamber of the semiconductor electroplating apparatus according to the present utility model.

Detailed Description

Other advantages and effects of the present utility model will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present utility model with reference to specific examples. The utility model may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present utility model. As described in detail in the embodiments of the present utility model, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present utility model. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.

In the context of the present utility model, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present utility model by way of illustration, and only the components related to the present utility model are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In order to make the illustration as concise as possible, not all structures are labeled in the drawings.

As shown in fig. 2 to 6, the present utility model provides a semiconductor electroplating apparatus comprising an electroplating chamber and a pre-wetting chamber, wherein the pre-wetting chamber comprises a base 21, and a silica gel pad 24, a guide post 25 and a plastic block 26 on the base 21, and the plastic block 26 has a smooth surface. During electroplating operation, the silica gel pad 24, the guide post 25 and the plastic block 26 are all fixed on the base 21 so as to jointly realize clamping and fixing of the wafer 23. The number of the guide posts 25, the number of the silica gel pads 24 and the number of the plastic blocks 26 are all plural, the plurality of the guide posts 25 are distributed at intervals along the circumferential direction of the wafer 23 to be plated, the number of the guide posts 25 is preferably even, for example, 4 or 6, the guide posts 25 are distributed in two pairs symmetrically, the distance between the two symmetrically arranged guide posts 25 is slightly larger than the diameter (for example, larger than 0.1 cm) of the wafer 23, the silica gel pads 24 and the plastic blocks 26 are positioned at the inner side of an enclosing area of the plurality of guide posts 25, and the enclosing area is an area for placing the wafer 23. The number of the silica gel pads 24 and the plastic blocks 26 is preferably the same as the number of the guide posts 25 and are arranged in a one-to-one correspondence manner, the plastic blocks 26 are positioned between the guide posts 25 which are arranged adjacently and the silica gel pads 24, and the height of the plastic blocks 26 is lower than that of the silica gel pads 24, i.e. the top surfaces of the plastic blocks 26 do not protrude from the top surfaces of the silica gel pads 24. In the preferred example, the silica gel pad 24, the guide post 25 and the plastic block 26 are located on the same side and are adjacently arranged, and the distance between the plastic block 26 and the guide post 25 is smaller than the distance between the plastic block 26 and the silica gel pad 24. That is, on the same side of the base 21, the plastic block 26 is closer to the guide post 25 than the silicone pad 24, and the plastic block 26 may be disposed next to the guide post 25. It should be noted that the "adjacent arrangement" and the "same side" are both with respect to the center of the base 21. That is, the silicone pad 24, the plastic block 26 and the guide posts 25 on the same side are arranged in order of small to large distances from the center of the base 21. As an example, the distance between the silica gel pad 24 and the center of the base 21 is equal to or greater than one half of the radius of the wafer 23 to be plated and less than three quarters of the radius of the wafer 23.

According to the improved structural design of the semiconductor electroplating equipment provided by the utility model, the cushion block made of plastic is arranged between the guide post and the silica gel pad which are arranged adjacently to the pre-wetting cavity, so that when the position of the wafer is slightly deviated, one side of the wafer is lapped on the plastic block and can smoothly slide down to a correct position (the process can be shown by referring to a circle of fig. 4), and the height of the plastic block is slightly lower than that of the silica gel pad, so that the fixing effect of the silica gel pad on the wafer is not influenced, the tolerance capability of a machine to the position of the wafer is improved, the alarm probability of the machine is reduced, and the breaking risk is reduced.

As shown in fig. 5, the pre-wetting chamber of the semiconductor electroplating apparatus further includes a pre-wetting tank 29, and a drain port 291 is provided on the pre-wetting tank 29, for example, at the bottom of the pre-wetting tank 29. The pre-wetting operation may be performed under an inert gas atmosphere, and thus an air inlet/outlet (not shown) may be provided on the pre-wetting tank 29. A carrier 31 is provided in the prewetting tank 29, and a swing arm nozzle 30 for spraying a wetting liquid is provided above the carrier 31, and the swing arm nozzle 30 is generally located directly above the wafer 23. The susceptor 21 is placed on the stage 31, and the stage 31 may be connected to a rotating device (not shown) to rotate the stage 31 when necessary, thereby rotating the susceptor 21 and the wafer 23. Due to the adoption of the structure provided by the utility model, the wafer does not need to shift in the high-speed rotation process. In addition, the carrier 31 may be further connected to a lifting device to adjust the wafer height when needed. In other examples, the swing arm nozzle 30 may also be coupled to a rotation device (not shown) to drive the swing arm nozzle 30 to rotate when needed, further improving wetting uniformity.

In an example, the base 21 is provided with a vacuum nozzle 22, for example, one vacuum nozzle 22 is located at the center of the base 21 to fix the wafer 23 on the base 21 by vacuum suction. The vacuum nozzle 22 may have a flared opening to increase the contact area with the wafer 23.

In the preferred embodiment, the silica gel pad 24, the guide posts 25 and the plastic block 26 are fixed to the base 21 by a base 27. With this structure, the attachment and detachment of the silica gel pad 24, the guide post 25, and the plastic block 26 to and from the base 21 can be achieved by the attachment and detachment of the base 27. In a further example, the silica gel pad 24, the guide post 25, the plastic block 26 and the base 27 are integrally formed, i.e. the structures are fixedly connected together. The advantage of such a design is that it is easy to replace and plating operations on wafers 23 of different sizes can be quickly performed. Of course, in other examples, the silica gel pad 24, the guide post 25 and the plastic block 26 may be directly fixed on the base 21 independently, which has the advantage of being capable of being replaced independently when the individual structure is damaged, without being replaced integrally, and saving the production cost.

Where a base 27 is provided, the base 27 may be secured to the base 21 in a suitable manner, such as by fasteners such as screws. In a preferred embodiment, the base 21 is provided with a groove, and the protrusion 271 at the bottom of the base 27 is embedded in the groove of the base 21. For example, the groove may be provided with internal threads and the surface of the projection 271 of the base 27 may be provided with external threads, so that the two may be assembled and disassembled by screwing in and out. The height of the base 27 can also be adjusted as desired.

In one example, the plastic block 26 is a block of PP (polypropylene) material. The PP material block has the advantages of easy processing and forming, good wear resistance and the like, and can effectively avoid particles generated by friction with the wafer 23.

The difference between the height of the plastic block 26 and the height of the silica gel pad 24 should not be too large or too small, otherwise, the function of better helping the reset is difficult to be achieved. The inventors have found through extensive experimentation that the difference in height between the plastic mass 26 and the silicone pad 24 is preferably 0.05 to 0.2mm, more preferably 0.1mm.

In one example, the guiding stud 25 is a circular cylinder with a conical top, and when the wafer is slightly offset during the process of placing the wafer into the wetting chamber by the robot, the wafer 23 will ride on the conical top of the guiding stud 25, and by virtue of its own weight, the wafer will slide down along the conical surface. The silicone pad 24 is preferably a cylindrical pad and the plastic block 26 is preferably a polygonal column, such as a triangular column. In addition, the top surface of the plastic block 26 may be an arcuate guide surface to help reposition the wafer 23.

The structure of the plating chamber of the semiconductor plating apparatus is not different from the prior art, for example, as shown in fig. 6, it includes a plating tank 32, an anode 33 located in the plating tank 32, and a clamping device 34 for fixing the wafer 23, where the clamping device 34 seals the non-plating surface of the wafer to prevent leakage during the plating process. After the wafer is pre-wetted in the pre-wetting chamber 29, it is transferred to the plating chamber by the robot for plating. During electroplating, the electroplating surface of the wafer faces the anode. This section is not expanded in detail as it is not the point of the utility model.

In some examples, in addition to the above structure, as shown in fig. 1, the semiconductor electroplating apparatus may further have a cleaning chamber 35 and a transfer chamber 36, where the electroplating chamber, the pre-wetting chamber and the cleaning chamber 35 are connected to the transfer chamber 36, and a robot 37 for transferring wafers between different chambers is disposed in the transfer chamber 36. The cleaning chamber 35 is used for cleaning and drying the wafer after the electroplating operation, for example, deionized water can be used for cleaning, and nitrogen purging and/or spin-drying can be used for drying, so that a carrier for carrying the wafer, a nozzle for spraying cleaning liquid, a gas pipeline and other structures can be correspondingly arranged in the cleaning chamber 35.

Other structures of the semiconductor electroplating apparatus of the present utility model are not quite different from those of the prior art, and detailed developments thereof will not be made.

The semiconductor electroplating equipment with the structure is applied to factories where the inventor is located at present, and the problem of fragmentation in electroplating operation is remarkably improved.

In summary, the present utility model provides a semiconductor electroplating apparatus, which includes an electroplating chamber and a pre-wetting chamber, wherein the pre-wetting chamber includes a base, and a silica gel pad, a guide post and a plastic block disposed on the base, the guide post, the silica gel pad and the plastic block are all plural, the guide posts are distributed at intervals along a circumferential direction of a wafer to be plated, the silica gel pad and the plastic block are disposed inside an area surrounded by the guide posts, the plastic block is disposed between the guide post and the silica gel pad, and the height of the plastic block is lower than that of the silica gel pad. According to the improved structural design of the semiconductor electroplating equipment, the cushion block made of plastic is arranged between the guide post of the pre-wetting cavity and the silica gel pad, so that when the position of the wafer is slightly deviated, one side of the wafer is lapped on the plastic block and can smoothly slide down to the correct position, and the height of the plastic block is slightly lower than that of the silica gel pad, so that the fixing effect of the silica gel pad on the wafer is not influenced, the tolerance capability of a machine on the position of the wafer is improved, the alarm probability of the machine is reduced, and the breaking risk is reduced. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present utility model and its effectiveness, and are not intended to limit the utility model. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the utility model. Accordingly, it is intended that all equivalent modifications and variations of the utility model be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. The utility model provides a semiconductor electroplating device, its characterized in that, semiconductor electroplating device includes electroplate chamber and prewetting chamber, and wherein, the prewetting chamber includes base and is located silica gel pad, guide post and plastic piece on the base, guide post, silica gel pad and plastic piece are a plurality of, and a plurality of guide posts are along waiting the circumference interval distribution of plating the wafer, and silica gel pad and plastic piece are located a plurality of guide posts and enclose and establish regional inboard, and the plastic piece is located between guide post and the silica gel pad that close on setting, and the height that the plastic piece was less than the silica gel pad.

2. The semiconductor electroplating apparatus of claim 1, wherein the silica gel pad, the guide posts and the plastic block are fixed to the base by a mount.

3. The semiconductor electroplating apparatus of claim 2, wherein the silica gel pad, the guide posts, the plastic block, and the base are integrally formed.

4. The semiconductor electroplating device according to claim 2, wherein the base is provided with a groove, and the bump at the bottom of the base is embedded in the groove of the base.

5. The semiconductor electroplating apparatus of claim 1, wherein the plastic block is a block of PP material.

6. The semiconductor electroplating apparatus according to claim 1, wherein the difference in height between the plastic block and the silica gel pad is 0.05 to 0.2mm.

7. The semiconductor plating apparatus as recited in claim 1, wherein said guide posts are circular posts having tapered tops, said silicone pads are cylindrical pads, and said plastic blocks are polygonal posts.

8. The semiconductor electroplating apparatus according to claim 1, wherein the plastic block is spaced from the guide post by a distance smaller than the distance between the plastic block and the silicon pad, among the silicon pad, the guide post and the plastic block which are disposed on the same side and are disposed adjacently.

9. The semiconductor electroplating apparatus according to claim 1, wherein a carrier is disposed in the pre-wetting chamber, a susceptor is disposed on the carrier, and the carrier is connected to the rotating means.

10. The semiconductor plating apparatus as recited in claim 1, further comprising a cleaning chamber and a transfer chamber, wherein the plating chamber, the pre-wetting chamber and the cleaning chamber are all connected to the transfer chamber, and a robot is disposed in the transfer chamber.