JP2011170049A - Solder resist composition and printed circuit board - Google Patents
Solder resist composition and printed circuit board Download PDFInfo
- Publication number
- JP2011170049A JP2011170049A JP2010032934A JP2010032934A JP2011170049A JP 2011170049 A JP2011170049 A JP 2011170049A JP 2010032934 A JP2010032934 A JP 2010032934A JP 2010032934 A JP2010032934 A JP 2010032934A JP 2011170049 A JP2011170049 A JP 2011170049A
- Authority
- JP
- Japan
- Prior art keywords
- solder resist
- carboxyl group
- resist composition
- printed wiring
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 66
- 239000000203 mixture Substances 0.000 title claims abstract description 47
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 49
- 229920005989 resin Polymers 0.000 claims abstract description 46
- 239000011347 resin Substances 0.000 claims abstract description 46
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000003999 initiator Substances 0.000 claims abstract description 35
- 125000003118 aryl group Chemical group 0.000 claims abstract description 28
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000178 monomer Substances 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims description 24
- 239000004593 Epoxy Substances 0.000 claims description 13
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 9
- 229920006026 co-polymeric resin Polymers 0.000 claims description 6
- 125000000466 oxiranyl group Chemical group 0.000 claims description 6
- 229920006243 acrylic copolymer Polymers 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000006866 deterioration Effects 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 31
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 25
- 229920000647 polyepoxide Polymers 0.000 description 20
- 239000003822 epoxy resin Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- -1 hydroxypropyl Chemical group 0.000 description 15
- 239000000243 solution Substances 0.000 description 13
- 238000002156 mixing Methods 0.000 description 12
- 238000001035 drying Methods 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005476 soldering Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 230000018109 developmental process Effects 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 4
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
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- 150000007519 polyprotic acids Polymers 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
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- JIHQDMXYYFUGFV-UHFFFAOYSA-N 1,3,5-triazine Chemical group C1=NC=NC=N1 JIHQDMXYYFUGFV-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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- 229920000298 Cellophane Polymers 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
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- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
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- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- XITRBUPOXXBIJN-UHFFFAOYSA-N bis(2,2,6,6-tetramethylpiperidin-4-yl) decanedioate Chemical compound C1C(C)(C)NC(C)(C)CC1OC(=O)CCCCCCCCC(=O)OC1CC(C)(C)NC(C)(C)C1 XITRBUPOXXBIJN-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
- H05K3/287—Photosensitive compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Polymerisation Methods In General (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Abstract
Description
本発明は、プリント配線板の永久マスクとしての使用に適した高反射率のソルダーレジストを形成することができるソルダーレジスト組成物、および回路形成されたプリント配線板の表面に、このソルダーレジスト組成物を用いてソルダーレジストパターンを形成してなるプリント配線板に関する。 The present invention relates to a solder resist composition capable of forming a solder resist having a high reflectivity suitable for use as a permanent mask of a printed wiring board, and the solder resist composition on the surface of a printed wiring board on which a circuit is formed. The present invention relates to a printed wiring board in which a solder resist pattern is formed by using.
プリント配線板は、一般的に積層板に張り合わせた銅箔の不要な部分をエッチングにより除去して回路配線を形成したものであり、電子部品がはんだ付けにより所定の場所に配置されている。このようなプリント配線板には、電子部品をはんだ付けする際の回路の保護膜として、基材に塗布して硬化させて形成するソルダーレジストが使用されている。 In general, a printed wiring board is formed by removing unnecessary portions of a copper foil bonded to a laminated board by etching to form a circuit wiring, and electronic components are arranged at predetermined positions by soldering. In such a printed wiring board, a solder resist formed by applying and curing on a base material is used as a protective film for a circuit when soldering an electronic component.
このソルダーレジストは、はんだ付けの際に、はんだが不必要な部分に付着するのを防止すると共に、回路導体が空気に直接曝されて、酸素や湿分により劣化することを防止する。さらに、ソルダーレジストは、回路基板の永久保護膜としても機能する。そのため、これには密着性、電気絶縁性、はんだ耐熱性、耐溶剤性、耐薬品性などの諸特性が要求される。 This solder resist prevents solder from adhering to unnecessary portions during soldering, and prevents the circuit conductor from being directly exposed to air and being deteriorated by oxygen or moisture. Furthermore, the solder resist also functions as a permanent protective film for the circuit board. Therefore, this requires various characteristics such as adhesion, electrical insulation, solder heat resistance, solvent resistance, and chemical resistance.
また、プリント配線板は、高密度化実現のため微細化(ファイン化)、多層化およびワンボード化の一途をたどっており、実装方式も、表面実装技術(SMT)へと推移している。そのため、ソルダーレジストにも、ファイン化、高解像性、高精度、高信頼性の要求が高まっている。 In addition, printed wiring boards have been increasingly miniaturized (finer), multilayered, and one-boarded to achieve higher density, and the mounting method has also shifted to surface mounting technology (SMT). Therefore, demands for finer, higher resolution, higher accuracy, and higher reliability are increasing for solder resists.
このようなソルダーレジストのパターンを形成する技術として、微細なパターンを正確に形成できるフォトリソグラフィー法が用いられており、特に環境面の配慮等から、アルカリ現像型のフォトリソグラフィー法が主流となっている。 As a technique for forming such a solder resist pattern, a photolithography method capable of accurately forming a fine pattern is used, and an alkali development type photolithography method has become the mainstream, especially in consideration of environmental aspects. Yes.
例えば、特許文献1および特許文献2には、ノボラック型エポキシ樹脂に不飽和モノカルボン酸を反応させ、さらに多塩基酸無水物を付加させた反応生成物をベースポリマーとするアルカリ水溶液で現像可能なソルダーレジスト組成物が開示されている。 For example, in Patent Document 1 and Patent Document 2, development is possible with an aqueous alkali solution using a reaction product obtained by reacting a novolak epoxy resin with an unsaturated monocarboxylic acid and further adding a polybasic acid anhydride as a base polymer. A solder resist composition is disclosed.
一方で、近年、携帯端末、パソコン、テレビ等の液晶ディスプレイのバックライト、また照明器具の光源などとして、低電力で発光する発光ダイオード(LED)を、ソルダーレジストが被覆形成されたプリント配線板に直接実装する用途が増えてきている。 On the other hand, in recent years, light-emitting diodes (LEDs) that emit light at low power as backlights for liquid crystal displays of portable terminals, personal computers, televisions, etc., and light sources for lighting fixtures, etc. have been applied to printed wiring boards coated with solder resist. Applications for direct mounting are increasing.
そこで、LEDの光を効率よく利用するため、ソルダーレジストが高反射率を有するよう、これを白色としたプリント配線板が求められている。 Therefore, in order to efficiently use the light of the LED, there is a demand for a printed wiring board in which the solder resist is white so that the solder resist has a high reflectance.
しかし、白色ソルダーレジストは組成物自体が高い反射率を有しているので、パターニング露光時に光を反射してしまい、その硬化に必要な光を十分に吸収することができず、解像性に劣る結果、高精細なパターン潜像を形成することが困難であった。 However, since the white solder resist has a high reflectance, the composition itself reflects light at the time of patterning exposure and cannot sufficiently absorb the light necessary for curing, resulting in high resolution. As a result, it was difficult to form a high-definition pattern latent image.
また、直接LEDを実装したプリント配線板は、LEDから発せられる光と熱により白色ソルダーレジストの劣化、着色が促進され、反射率の低下を起こす。 Moreover, the printed wiring board which mounted LED directly promotes deterioration and coloring of a white soldering resist with the light and heat which are emitted from LED, and causes a fall of a reflectance.
本発明の目的は、LEDの光を効率よく利用することができる、高反射率で高解像性のソルダーレジスト膜を形成するためのソルダーレジスト組成物及びプリント配線板を提供することにある。 An object of the present invention is to provide a solder resist composition and a printed wiring board for forming a solder resist film having high reflectivity and high resolution, which can efficiently use light from an LED.
更に本発明の目的は、LEDから発せられる光と熱によるソルダーレジストの劣化、着色を防止することができるソルダーレジスト組成物及びプリント配線板を提供することにある。 Furthermore, the objective of this invention is providing the soldering resist composition and printed wiring board which can prevent degradation and coloring of the soldering resist by the light and heat which are emitted from LED.
本発明者等は鋭意研究した結果、アルカリ現像を可能とし、熱硬化性をもつカルボキシル基含有樹脂として芳香環を有さない樹脂を用い、かつ、高反射率を達成させるための白色顔料としてルチル型酸化チタンを用いることで、長期にわたり、光や熱による劣化を抑制し、また光重合開始剤としてビスアシルフォスフィンオキサイド系光重合開始剤とモノアシルフォスフィンオキサイド系光重合開始剤を併用することによって、反射率が高いルチル型酸化チタンを多量に含有するソルダーレジスト組成物であっても、解像性に優れ、高精細なパターン潜像を形成することができることを見出した。 As a result of diligent research, the present inventors have made use of a resin that does not have an aromatic ring as a carboxyl group-containing resin that enables alkali development and has a thermosetting property, and as a white pigment for achieving high reflectance, rutile. By using type titanium oxide, deterioration due to light and heat is suppressed for a long time, and a bisacylphosphine oxide photopolymerization initiator and a monoacylphosphine oxide photopolymerization initiator are used in combination as a photopolymerization initiator. Thus, it was found that even a solder resist composition containing a large amount of rutile-type titanium oxide having a high reflectivity can form a high-definition pattern latent image with excellent resolution.
すなわち、本発明のソルダーレジスト組成物は(A)芳香環を有さないカルボキシル基含有樹脂、(B)ビスアシルフォスフィンオキサイド系光重合開始剤、(C)モノアシルフォスフィンオキサイド系光重合開始剤、(D)光重合性モノマー、(E)ルチル型酸化チタン、および(G)有機溶剤を含むことを特徴とし、さらに(F)エポキシ化合物又は(H)チオキサントン系光重合増感剤を含有することもできる。 That is, the solder resist composition of the present invention comprises (A) a carboxyl group-containing resin having no aromatic ring, (B) a bisacylphosphine oxide photopolymerization initiator, and (C) a monoacylphosphine oxide photopolymerization start. Agent, (D) a photopolymerizable monomer, (E) rutile titanium oxide, and (G) an organic solvent, and further contains (F) an epoxy compound or (H) a thioxanthone photopolymerization sensitizer You can also
本発明によれば、現像型ソルダーレジストとして要求されるコーティング性、光硬化性、現像性、はんだ耐熱性、密着性、電気絶縁性等の特性を有し、さらに経時による反射率の低下および劣化による着色を抑えた高反射率で高解像性のソルダーレジスト膜を形成することができる。さらに本発明のソルダーレジスト組成物は、LEDをプリント配線板に実装した際に全体として照度を上げることができる。 According to the present invention, it has characteristics such as coating properties, photocurability, developability, solder heat resistance, adhesion, and electrical insulation required as a development type solder resist, and further, the reflectance is reduced and deteriorated over time. It is possible to form a solder resist film having a high reflectance and high resolution while suppressing coloring due to. Furthermore, the solder resist composition of the present invention can increase the illuminance as a whole when the LED is mounted on a printed wiring board.
以下、本発明をさらに詳しく説明する。 Hereinafter, the present invention will be described in more detail.
本発明のソルダーレジスト組成物は、(A)芳香環を有さないカルボキシル基含有樹脂、(B)ビスアシルフォスフィンオキサイド系光重合開始剤、(C)モノアシルフォスフィンオキサイド系光重合開始剤、(D)光重合性モノマー、(E)ルチル型酸化チタン、および(G)有機溶剤を含むことを特徴とし、さらに(F)エポキシ化合物、又は(H)チオキサントン系光重合増感剤を含有することもできる。 The solder resist composition of the present invention includes (A) a carboxyl group-containing resin having no aromatic ring, (B) a bisacylphosphine oxide photopolymerization initiator, and (C) a monoacylphosphine oxide photopolymerization initiator. , (D) a photopolymerizable monomer, (E) a rutile type titanium oxide, and (G) an organic solvent, and further comprising (F) an epoxy compound or (H) a thioxanthone photopolymerization sensitizer You can also
(芳香環を有さないカルボキシル基含有樹脂)
芳香環を有さないカルボキシル基含有樹脂(A)としては、それ自体に感光性の不飽和二重結合を1個以上有する感光性のカルボキシル基含有樹脂、および感光性の不飽和二重結合を有さないカルボキシル基含有樹脂のいずれも使用可能であり、特定のものに限定されるものではない。特に以下に列挙する樹脂の中で芳香環を有さないもの(オリゴマーまたはポリマーのいずれでもよい)を好適に使用することができる。すなわち、(1)不飽和カルボン酸と不飽和二重結合を有する化合物の共重合によって得られるカルボキシル基含有樹脂、(2)カルボキシル基含有(メタ)アクリル系共重合樹脂に、1分子中にオキシラン環とエチレン性不飽和基を有する化合物を反応させて得られる感光性のカルボキシル基含有樹脂、(3)1分子中にそれぞれ1個のエポキシ基と不飽和二重結合を有する化合物と不飽和二重結合を有する化合物との共重合体に不飽和モノカルボン酸を反応させ、この反応により生成した第2級の水酸基に飽和または不飽和多塩基酸無水物を反応させて得られる感光性のカルボキシル基含有樹脂、(4)水酸基含有ポリマーに飽和または不飽和多塩基酸無水物を反応させた後、この反応により生成したカルボン酸に1分子中にそれぞれ1個のエポキシ基と不飽和二重結合を有する化合物を反応させて得られる感光性の水酸基およびカルボキシル基含有樹脂である。
(Carboxyl group-containing resin having no aromatic ring)
Examples of the carboxyl group-containing resin (A) having no aromatic ring include a photosensitive carboxyl group-containing resin having one or more photosensitive unsaturated double bonds in itself, and a photosensitive unsaturated double bond. Any of the carboxyl group-containing resins that do not have can be used and is not limited to a specific one. In particular, among the resins listed below, those having no aromatic ring (any of oligomers or polymers) can be preferably used. That is, (1) a carboxyl group-containing resin obtained by copolymerization of an unsaturated carboxylic acid and a compound having an unsaturated double bond; (2) a carboxyl group-containing (meth) acrylic copolymer resin; A photosensitive carboxyl group-containing resin obtained by reacting a ring and a compound having an ethylenically unsaturated group; (3) a compound having one epoxy group and an unsaturated double bond in each molecule; A photosensitive carboxyl obtained by reacting a copolymer with a compound having a heavy bond with an unsaturated monocarboxylic acid, and reacting a secondary hydroxyl group produced by this reaction with a saturated or unsaturated polybasic acid anhydride. After reacting a group-containing resin and (4) a hydroxyl group-containing polymer with a saturated or unsaturated polybasic acid anhydride, each carboxylic acid produced by this reaction has 1 per molecule. The compounds are reacted with epoxy groups of the unsaturated double bond is a photosensitive hydroxyl and carboxyl group-containing resin obtained by.
これらの中でも、上記(2)の感光性のカルボキシル基含有樹脂である、(a)カルボキシル基含有(メタ)アクリル系共重合樹脂と、(b)1分子中にオキシラン環とエチレン性不飽和基を有する化合物との反応により得られるカルボキシル基を有する共重合系樹脂が好ましい。 Among these, (a) the carboxyl group-containing (meth) acrylic copolymer resin (2), which is the photosensitive carboxyl group-containing resin of (2), and (b) an oxirane ring and an ethylenically unsaturated group in one molecule. A copolymer resin having a carboxyl group obtained by a reaction with a compound having an aromatic group is preferred.
(a)のカルボキシル基含有(メタ)アクリル系共重合樹脂は、(メタ)アクリル酸エステルと、1分子中に1個の不飽和基と少なくとも1個のカルボキシル基を有する化合物とを共重合させて得られる。共重合樹脂(a)を構成する(メタ)アクリル酸エステルとしては、メチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、ブチル(メタ)アクリレート、ペンチル(メタ)アクリレート、ヘキシル(メタ)アクリレート等の(メタ)アクリル酸アルキルエステル類、2−ヒドロキシエチル(メタ)アクリレート、ヒドロキシプロピル(メタ)アクリレート、ヒドロキシブチル(メタ)アクリレート、カプロラクトン変性2−ヒドロキシエチル(メタ)アクリレート等の水酸基含有(メタ)アクリル酸エステル類、メトキシジエチレングリコール(メタ)アクリレート、エトキシジエチレングリコール(メタ)アクリレート、イソオクチルオキシジエチレングリコール(メタ)アクリレート、フェノキシトリエチレングリコール(メタ)アクリレート、メトキシトリエチレングリコール(メタ)アクリレート、メトキシポリエチレングリコール(メタ)アクリレート等のグリコール変性(メタ)アクリレート類などが挙げられる。これらは単独で用いても、2種以上を混合して用いてもよい。なお、本明細書中において、(メタ)アクリレートとは、アクリレートおよびメタアクリレートを総称する用語であり、他の類似の表現についても同様である。 The carboxyl group-containing (meth) acrylic copolymer resin (a) is obtained by copolymerizing a (meth) acrylic acid ester and a compound having one unsaturated group and at least one carboxyl group in one molecule. Obtained. Examples of the (meth) acrylic acid ester constituting the copolymer resin (a) include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, pentyl (meth) acrylate, hexyl ( Hydroxyl groups such as (meth) acrylic acid alkyl esters such as (meth) acrylate, 2-hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, caprolactone-modified 2-hydroxyethyl (meth) acrylate Containing (meth) acrylic acid esters, methoxydiethylene glycol (meth) acrylate, ethoxydiethylene glycol (meth) acrylate, isooctyloxydiethylene glycol (meth) acrylate, phenoxy Triethylene glycol (meth) acrylate, methoxy triethylene glycol (meth) acrylate, glycol-modified (meth) acrylates such as methoxy polyethylene glycol (meth) acrylate. These may be used alone or in combination of two or more. In addition, in this specification, (meth) acrylate is a term that collectively refers to acrylate and methacrylate, and the same applies to other similar expressions.
また、1分子中に1個の不飽和基と少なくとも1個のカルボキシル基を有する化合物としては、アクリル酸、メタクリル酸、不飽和基とカルボン酸の間が鎖延長された変性不飽和モノカルボン酸、例えばβ−カルボキシエチル(メタ)アクリレート、2−アクリロイルオキシエチルコハク酸、2−アクリロイルオキシエチルヘキサヒドロフタル酸、ラクトン変性等によりエステル結合を有する不飽和モノカルボン酸、エーテル結合を有する変性不飽和モノカルボン酸、さらにはマレイン酸等のカルボキシル基を分子中に2個以上含むものなどが挙げられる。これらは単独で用いても、2種以上を混合して用いてもよい。 In addition, examples of the compound having one unsaturated group and at least one carboxyl group in one molecule include acrylic acid, methacrylic acid, and a modified unsaturated monocarboxylic acid in which a chain is extended between the unsaturated group and the carboxylic acid. For example, β-carboxyethyl (meth) acrylate, 2-acryloyloxyethyl succinic acid, 2-acryloyloxyethyl hexahydrophthalic acid, unsaturated monocarboxylic acid having an ester bond due to lactone modification, etc., modified unsaturated having an ether bond Examples thereof include monocarboxylic acids, and those containing two or more carboxyl groups in the molecule, such as maleic acid. These may be used alone or in combination of two or more.
(b)1分子中にオキシラン環とエチレン性不飽和基を有する化合物としては、1分子中にエチレン性不飽和基とオキシラン環を有する化合物であればよく、例えば、グリシジル(メタ)アクリレート、α−メチルグリシジル(メタ)アクリレート、3,4−エポキシシクロヘキシルメチル(メタ)アクリレート、3,4−エポキシシクロヘキシルエチル(メタ)アクリレート、3,4−エポキシシクロヘキシルブチル(メタ)アクリレート、3,4−エポキシシクロヘキシルメチルアミノアクリレート等を挙げることができる。中でも、3,4−エポキシシクロヘキシルメチル(メタ)アクリレートが好ましい。これら(b)1分子中にオキシラン環とエチレン性不飽和基を有する化合物は、単独で用いても2種以上を混合して用いてもよい。 (B) The compound having an oxirane ring and an ethylenically unsaturated group in one molecule may be a compound having an ethylenically unsaturated group and an oxirane ring in one molecule. For example, glycidyl (meth) acrylate, α -Methyl glycidyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, 3,4-epoxycyclohexylethyl (meth) acrylate, 3,4-epoxycyclohexylbutyl (meth) acrylate, 3,4-epoxycyclohexyl Examples include methylamino acrylate. Among these, 3,4-epoxycyclohexylmethyl (meth) acrylate is preferable. These (b) compounds having an oxirane ring and an ethylenically unsaturated group in one molecule may be used alone or in admixture of two or more.
芳香環を有さないカルボキシル基含有樹脂(A)は、その酸価が50〜200mgKOH/gの範囲にあることが必要である。酸価が50mgKOH/g未満の場合には、弱アルカリ水溶液でのソルダーレジスト組成物の塗膜の未露光部分の除去が難しい。酸化が200mgKOH/gを超えると、硬化被膜の耐水性、電気特性が劣るなどの問題がある。また、芳香環を有さないカルボキシル基含有樹脂(A)の重量平均分子量は、5,000〜100,000の範囲にあることが好ましい。重量平均分子量が5,000未満であるとソルダーレジスト組成物の塗膜の指触乾燥性が著しく劣る傾向がある。また、重量平均分子量が100,000を超えると、ソルダーレジスト組成物の現像性、貯蔵安定性が著しく悪化する問題を生じるために好ましくない。 The carboxyl group-containing resin (A) not having an aromatic ring needs to have an acid value in the range of 50 to 200 mgKOH / g. When the acid value is less than 50 mgKOH / g, it is difficult to remove the unexposed portion of the coating film of the solder resist composition with a weak alkaline aqueous solution. When oxidation exceeds 200 mgKOH / g, there exists a problem that the water resistance of a cured film and an electrical property are inferior. Moreover, it is preferable that the weight average molecular weight of carboxyl group-containing resin (A) which does not have an aromatic ring exists in the range of 5,000-100,000. When the weight average molecular weight is less than 5,000, the dryness to touch of the coating film of the solder resist composition tends to be remarkably inferior. On the other hand, if the weight average molecular weight exceeds 100,000, it is not preferable because the developability and storage stability of the solder resist composition are remarkably deteriorated.
(光重合開始剤)
(ビスアシルフォスフィンオキサイド系光重合開始剤)
本発明に用いられるビスアシルフォスフィンオキサイド系光重合開始剤(B)としては、ビス−(2,6−ジクロロベンゾイル)フェニルフォスフィンオキサイド、ビス−(2,6−ジクロロベンゾイル)−2,5−ジメチルフェニルフォスフィンオキサイド、ビス−(2,6−ジクロロベンゾイル)−4−プロピルフェニルフォスフィンオキサイド、ビス−(2,6−ジクロロベンゾイル)−1−ナフチルフォスフィンオキサイド、ビス−(2,6−ジメトキシベンゾイル)フェニルフォスフィンオキサイド、ビス−(2,6−ジメトキシベンゾイル)−2,4,4−トリメチルペンチルフォスフィンオキサイド、ビス−(2,6−ジメトキシベンゾイル)−2,5−ジメチルフェニルフォスフィンオキサイド、ビス−(2,4,6−トリメチルベンゾイル)フェニルフォスフィンオキサイド、(2,5,6−トリメチルベンゾイル)−2,4,4−トリメチルペンチルフォスフィンオキサイド等が挙げられる。中でもビス−(2,4,6−トリメチルベンゾイル)フェニルフォスフィンオキサイド(チバ・ジャパン社製、商品名;イルガキュア819)が入手しやすく実用的である。
(Photopolymerization initiator)
(Bisacylphosphine oxide photopolymerization initiator)
Examples of the bisacylphosphine oxide photopolymerization initiator (B) used in the present invention include bis- (2,6-dichlorobenzoyl) phenylphosphine oxide and bis- (2,6-dichlorobenzoyl) -2,5. -Dimethylphenylphosphine oxide, bis- (2,6-dichlorobenzoyl) -4-propylphenylphosphine oxide, bis- (2,6-dichlorobenzoyl) -1-naphthylphosphine oxide, bis- (2,6 -Dimethoxybenzoyl) phenylphosphine oxide, bis- (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide, bis- (2,6-dimethoxybenzoyl) -2,5-dimethylphenylphosphine Fin oxide, bis- (2,4,6-tri Chirubenzoiru) phenyl phosphine oxide, (2,5,6-trimethylbenzoyl) -2,4,4-trimethylpentyl phosphine oxide and the like. Among them, bis- (2,4,6-trimethylbenzoyl) phenylphosphine oxide (manufactured by Ciba Japan, trade name; Irgacure 819) is easily available and practical.
(モノアシルフォスフィンオキサイド系光重合開始剤)
本発明に用いられるモノアシルフォスフィンオキサイド系光重合開始剤(C)としては、2,4,6−トリメチルベンゾイルジフェニルフォスフィンオキサイド、2,6−ジメトキシベンゾイルジフェニルフォスフィンオキサイド、2,6−ジクロロベンゾイルジフェニルフォスフィンオキサイド、2,4,6−トリメチルベンゾイルフェニルフォスフィン酸メチルエステル、2−メチルベンゾイルジフェニルフォスフィンオキサイド、ピバロイルフェニルフォスフィン酸イソプロピルエステル等が挙げられる。中でも2,4,6−トリメチルベンゾイルジフェニルフォスフィンオキサイド(チバ・ジャパン社製、商品名;ダロキュアTPO)が入手しやすく実用的である。
(Monoacylphosphine oxide photopolymerization initiator)
Examples of the monoacylphosphine oxide photopolymerization initiator (C) used in the present invention include 2,4,6-trimethylbenzoyldiphenylphosphine oxide, 2,6-dimethoxybenzoyldiphenylphosphine oxide, and 2,6-dichloro. Examples include benzoyldiphenylphosphine oxide, 2,4,6-trimethylbenzoylphenylphosphinic acid methyl ester, 2-methylbenzoyldiphenylphosphine oxide, and pivaloylphenylphosphinic acid isopropyl ester. Among them, 2,4,6-trimethylbenzoyldiphenylphosphine oxide (manufactured by Ciba Japan, trade name: Darocur TPO) is easily available and practical.
本発明のソルダーレジスト組成物は、上記ビスアシルフォスフィンオキサイド系光重合開始剤(B)と前記モノアシルフォスフィンオキサイド系光重合開始剤(C)を併用することにより、酸化チタンを配合した高反射率の塗膜でも必要な光を吸収でき、高精細なパターン形成ができるようになる。またその配合比率を変えることにより、塗膜の光吸収の微調整が可能となる。すなわち、パターンの断面形状で基材面側の深部の硬化性が不足してアンダーカットが出やすいときには、上記ビスアシルフォスフィンオキサイド系光重合開始剤(B)の比率を大きくする。また、表面硬化性が不足して現像後に表面状態が悪いときには、前記モノアシルフォスフィンオキサイド系光重合開始剤(C)の比率を大きくする。このビスアシルフォスフィンオキサイド系光重合開始剤(B)とモノアシルフォスフィンオキサイド系光重合開始剤(C)の配合比率は、90対10〜1対99、好ましくは80対20〜2対98である。この配合比率の範囲外では、これらの併用による効果が少なくなり、必要な光が吸収できないため高精細なパターン形成ができなくなる。 The solder resist composition of the present invention is a combination of titanium oxide by combining the bisacylphosphine oxide photopolymerization initiator (B) and the monoacylphosphine oxide photopolymerization initiator (C). Even a reflective coating film can absorb necessary light, and a high-definition pattern can be formed. Moreover, the light absorption of the coating film can be finely adjusted by changing the blending ratio. That is, when the cross-sectional shape of the pattern is insufficient in curability at the deep part on the substrate surface side and undercut is likely to occur, the ratio of the bisacylphosphine oxide photopolymerization initiator (B) is increased. When the surface curability is insufficient and the surface condition is poor after development, the ratio of the monoacylphosphine oxide photopolymerization initiator (C) is increased. The blending ratio of the bisacylphosphine oxide photopolymerization initiator (B) to the monoacylphosphine oxide photopolymerization initiator (C) is 90:10 to 1:99, preferably 80:20 to 2:98. It is. Outside the range of this blending ratio, the effect of the combined use is reduced, and the necessary light cannot be absorbed, so that a high-definition pattern cannot be formed.
ビスアシルフォスフィンオキサイド系光重合開始剤(B)とモノアシルフォスフィンオキサイド系光重合開始剤(C)の合計配合量は、芳香環を有さないカルボキシル基含有樹脂(A)100質量部に対して好ましくは1〜30質量部、より好ましくは2〜25質量部である。このビスアシルフォスフィンオキサイド系光重合開始剤(B)とモノアシルフォスフィンオキサイド系光重合開始剤(C)の合計配合量が1質量部未満の場合、光硬化性が低下し、露光・現像後のパターン形成が困難になるので好ましくない。一方、当該合計配合量が30質量部を超えた場合、光重合開始剤由来の塗膜の色つきが大きくなり、またコスト高の原因となるので好ましくない。 The total amount of the bisacylphosphine oxide photopolymerization initiator (B) and the monoacylphosphine oxide photopolymerization initiator (C) is 100 parts by mass of the carboxyl group-containing resin (A) having no aromatic ring. The amount is preferably 1 to 30 parts by mass, more preferably 2 to 25 parts by mass. When the total blending amount of the bisacylphosphine oxide photopolymerization initiator (B) and the monoacylphosphine oxide photopolymerization initiator (C) is less than 1 part by mass, the photocurability decreases, and exposure / development Since subsequent pattern formation becomes difficult, it is not preferable. On the other hand, when the total blending amount exceeds 30 parts by mass, the color of the coating film derived from the photopolymerization initiator is increased, and the cost is increased.
(光重合性モノマー)
本発明に用いられる光重合性モノマー(D)としては、2−ヒドロキシエチルアクリレート、2−ヒドロキシブチルアクリレートなどのヒドロキシアルキルアクリレート類;エチレングリコール、メトキシテトラエチレングリコール、ポリエチレングリコール、プロピレングリコールなどのグリコールのモノ又はジアクリレート類;N,N−ジメチルアクリルアミド、N−メチロールアクリルアミドなどのアクリルアミド類;N,N−ジメチルアミノエチルアクリレートなどのアミノアルキルアクリレート類;ヘキサンジオール、トリメチロールプロパン、ペンタエリスリトール、ジペンタエリスリトール、トリス−ヒドロキシエチルイソシアヌレートなどの多価アルコール又はこれらのエチレンオキサイドもしくはプロピレンオキサイド付加物の多価アクリレート類;フェノキシアクリレート、ビスフェノールAジアクリレート及び、これらのフェノール類のエチレンオキサイドあるいはプロピレンオキサイド付加物などのアクリレート類;グリセリンジグリシジルエーテル、トリメチロールプロパントリグリシジルエーテルなどのグリシジルエーテルのアクリレート類;メラミンアクリレート;及び/又は上記アクリレート類に対応するメタクリレート類等を挙げることができる。
(Photopolymerizable monomer)
Examples of the photopolymerizable monomer (D) used in the present invention include hydroxyalkyl acrylates such as 2-hydroxyethyl acrylate and 2-hydroxybutyl acrylate; glycols such as ethylene glycol, methoxytetraethylene glycol, polyethylene glycol, and propylene glycol. Mono- or diacrylates; acrylamides such as N, N-dimethylacrylamide and N-methylolacrylamide; aminoalkyl acrylates such as N, N-dimethylaminoethyl acrylate; hexanediol, trimethylolpropane, pentaerythritol, dipentaerythritol Polyhydric alcohols such as tris-hydroxyethyl isocyanurate or their ethylene oxide or propylene oxide Polyvalent acrylates; phenoxy acrylate, bisphenol A diacrylate and acrylates such as ethylene oxide or propylene oxide adducts of these phenols; glycidyl ether acrylates such as glycerin diglycidyl ether and trimethylolpropane triglycidyl ether Melamine acrylate; and / or methacrylates corresponding to the above acrylates.
これらの光重合性モノマー(D)の配合量は、芳香環を有さないカルボキシル基含有樹脂(A)100質量部に対して、好ましくは10〜100質量部、より好ましくは20〜80質量部である。配合量が100質量部を超えると、硬化塗膜のソルダーレジストとしての物性が低下して好ましくない。一方、当該配合量が10質量部未満であると充分な光硬化性がなく、高精細なパターンが得られない。 The blending amount of these photopolymerizable monomers (D) is preferably 10 to 100 parts by mass, more preferably 20 to 80 parts by mass with respect to 100 parts by mass of the carboxyl group-containing resin (A) having no aromatic ring. It is. When the blending amount exceeds 100 parts by mass, the physical properties of the cured coating film as a solder resist are lowered, which is not preferable. On the other hand, when the blending amount is less than 10 parts by mass, sufficient photocurability is not obtained and a high-definition pattern cannot be obtained.
(ルチル型酸化チタン)
本発明では、白色顔料として、ルチル型酸化チタン(E)を用いる。一般的な酸化チタンにはアナターゼ型とルチル型がある。アナターゼ型酸化チタンは、光触媒活性を有するために、ソルダーレジスト組成物中の樹脂の変色を引き起こすことがある。これに対し、ルチル型酸化チタンは、アナターゼ型酸化チタンと比較して紫外線領域と可視光領域の境界付近に吸収があり、白色度と可視光領域全体の反射率の点では劣るものの、光活性を殆ど有さないために、安定したソルダーレジスト膜を得ることができる。
(Rutile titanium oxide)
In the present invention, rutile type titanium oxide (E) is used as the white pigment. Common titanium oxide includes anatase type and rutile type. Since anatase type titanium oxide has photocatalytic activity, it may cause discoloration of the resin in the solder resist composition. In contrast, rutile-type titanium oxide absorbs near the boundary between the ultraviolet region and the visible light region as compared to anatase-type titanium oxide, and is inferior in terms of whiteness and reflectivity of the entire visible light region, but photoactive Therefore, a stable solder resist film can be obtained.
前記ルチル型酸化チタン(E)としては、公知のものを使用することができる。具体的には、タイペークR−820、タイペークR−830、タイペークR−930、タイペークR−550、タイペークR−630、タイペークR−680、タイペークR−670、タイペークR−680、タイペークR−670、タイペークR−780、タイペークR−850、タイペークCR−50、タイペークCR−57、タイペークCR−80、タイペークCR−90、タイペークCR−93、タイペークCR−95、タイペークCR−97、タイペークCR−60、タイペークCR−63、タイペークCR−67、タイペークCR−58、タイペークCR−85、タイペークUT771(石原産業株式会社製)、タイピュアR−100、タイピュアR−101、タイピュアR−102、タイピュアR−103、タイピュアR−104、タイピュアR−105、タイピュアR−108、タイピュアR−900、タイピュアR−902、タイピュアR−960、タイピュアR−706、タイピュアR−931(デュポン株式会社製)、TITON R−25、TITON R−21、TITON R−32、TITON R−7E、TITON R−5N、TITON R−61N、TITON R−62N、TITON R−42、TITON R−45M、TITON R−44、TITON R−49S、TITON GTR−100、TITON GTR−300、TITON D−918、TITON TCR−29、TITON TCR−52、TITON FTR−700(堺化学工業株式会社製)等を使用することができる。 A well-known thing can be used as said rutile type titanium oxide (E). Specifically, the Taipei R-820, the Taipei R-830, the Taipei R-930, the Taipei R-550, the Taipei R-630, the Taipei R-680, the Taipei R-670, the Taipei R-680, the Taipei R-670, Type R-780, Type R-850, Type CR-50, Type CR-57, Type CR-80, Type CR-90, Type CR-93, Type CR-95, Type CR-97, Type CR CR-60, Taipei CR-63, Taipei CR-67, Taipei CR-58, Taipei CR-85, Taipei UT771 (manufactured by Ishihara Sangyo Co., Ltd.), Taipei Pure R-100, Taipei Pure R-101, Taiwan Pure R-102, Taiwan Pure R-103, Tai Pure R-1 4, Tai Pure R-105, Tai Pure R-108, Tai Pure R-900, Tai Pure R-902, Tai Pure R-960, Tai Pure R-706, Tai Pure R-931 (manufactured by DuPont), TITON R-25, TITON R -21, TITON R-32, TITON R-7E, TITON R-5N, TITON R-61N, TITON R-62N, TITON R-42, TITON R-45M, TITON R-44, TITON R-49S, TITON GTR -100, TITON GTR-300, TITON D-918, TITON TCR-29, TITON TCR-52, TITON FTR-700 (manufactured by Sakai Chemical Industry Co., Ltd.) and the like can be used.
このようなルチル型酸化チタン(E)の配合量は、芳香環を有さないカルボキシル基含有樹脂(A)100質量部に対して、好ましくは50〜450質量部、より好ましくは60〜350質量部である。配合量が450質量部を超えると、光硬化性が低下し、硬化深度が低くなり好ましくない。一方、当該配合量が50質量部未満であると、隠ぺい力が小さく、高反射率のソルダーレジストを得ることができない。 The amount of such rutile-type titanium oxide (E) is preferably 50 to 450 parts by weight, more preferably 60 to 350 parts by weight with respect to 100 parts by weight of the carboxyl group-containing resin (A) having no aromatic ring. Part. If the blending amount exceeds 450 parts by mass, the photocurability is lowered, and the curing depth is lowered, which is not preferable. On the other hand, when the blending amount is less than 50 parts by mass, the hiding power is small and a high reflectance solder resist cannot be obtained.
(エポキシ化合物)
次に、エポキシ化合物(F)としては、例えばビスフェノールS型エポキシ樹脂、ジグリシジルフタレート樹脂、トリグリシジルイソシアヌレート(例えば日産化学(株)製のTEPIC−H(S−トリアジン環骨格面に対し3個のエポキシ基が同一方向に結合した構造をもつβ体)や、TEPIC(β体と、S−トリアジン環骨格面に対し1個のエポキシ基が他の2個のエポキシ基と異なる方向に結合した構造をもつα体との混合物)等)などの複素環式エポキシ樹脂、ビキシレノール型エポキシ樹脂、ビフェニル型エポキシ樹脂、テトラグリシジルキシレノイルエタン樹脂などの希釈剤に難溶性のエポキシ樹脂や、ビスフェノールA型エポキシ樹脂、水添ビスフェノールA型エポキシ樹脂、ビスフェノールF型樹脂、臭素化ビスフェノールA型エポキシ樹脂、フェノールノボラック型またはクレゾールノボラック型エポキシ樹脂、脂環式エポキシ樹脂、ビスフェノールAのノボラック型エポキシ樹脂、キレート型エポキシ樹脂、グリオキザール型エポキシ樹脂、アミノ基含有エポキシ樹脂、ゴム変性エポキシ樹脂、ジシクロペンタジエンフェノリック型エポキシ樹脂、シリコーン変性エポキシ樹脂、ε−カプロラクトン変性エポキシ樹脂などの希釈剤に可溶性のエポキシ樹脂などが挙げられる。これらのエポキシ樹脂は、単独でまたは2種以上を組み合わせて用いることができる。
(Epoxy compound)
Next, as the epoxy compound (F), for example, bisphenol S type epoxy resin, diglycidyl phthalate resin, triglycidyl isocyanurate (for example, 3 TEPIC-H (manufactured by Nissan Chemical Co., Ltd. with respect to the S-triazine ring skeleton surface) Β-epoxies having a structure in which the epoxy groups are bonded in the same direction) and TEPIC (β-bonding, and one epoxy group bonded to the other two epoxy groups in the S-triazine ring skeleton plane) Etc.)), etc., etc.), etc.), etc.), etc.), etc. A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol F type resin, brominated bisphenol Type epoxy resin, phenol novolac type or cresol novolac type epoxy resin, alicyclic epoxy resin, bisphenol A novolac type epoxy resin, chelate type epoxy resin, glyoxal type epoxy resin, amino group-containing epoxy resin, rubber-modified epoxy resin, di Examples thereof include epoxy resins that are soluble in diluents such as cyclopentadiene phenolic epoxy resins, silicone-modified epoxy resins, and ε-caprolactone-modified epoxy resins. These epoxy resins can be used alone or in combination of two or more.
このようなエポキシ化合物(F)の配合量は、芳香環を有さないカルボキシル基含有樹脂(A)100質量部に対して好ましくは5〜70質量部、より好ましくは5〜60質量部である。エポキシ化合物(F)の配合量が70質量部を超えると、現像液での未露光部分の溶解性が低下し、現像残りが発生しやすくなり、実用上使用することが難しい。一方、当該配合量が5質量部未満であると、芳香環を有さないカルボキシル基含有樹脂(A)のカルボキシル基が未反応の状態で残存するため、硬化塗膜の電気特性、はんだ耐熱性、耐薬品性が充分に得られ難くなる傾向がある。 The compounding amount of such an epoxy compound (F) is preferably 5 to 70 parts by mass, more preferably 5 to 60 parts by mass with respect to 100 parts by mass of the carboxyl group-containing resin (A) having no aromatic ring. . When the compounding quantity of an epoxy compound (F) exceeds 70 mass parts, the solubility of the unexposed part in a developing solution will fall, it will become easy to generate | occur | produce the image development residue, and it is difficult to use it practically. On the other hand, if the blending amount is less than 5 parts by mass, the carboxyl group of the carboxyl group-containing resin (A) having no aromatic ring remains in an unreacted state. The chemical resistance tends to be difficult to obtain sufficiently.
芳香環を有さないカルボキシル基含有樹脂(A)のカルボキシル基と、エポキシ化合物(F)のエポキシ基とは、開環重合により反応する。そして、有機溶剤(G)やソルダーレジスト組成物中の他の物質として易溶性のエポキシ樹脂を用いた場合、乾燥時の熱によりカルボキシル基とエポキシ基の架橋が進みやすい。そのため、この架橋反応を抑制して乾燥時間を長くとりたい場合には、難溶性のエポキシ樹脂を単独で、または易溶性のエポキシ樹脂と共に用いることが望ましい。 The carboxyl group of the carboxyl group-containing resin (A) not having an aromatic ring and the epoxy group of the epoxy compound (F) react by ring-opening polymerization. And when an easily soluble epoxy resin is used as the organic solvent (G) or other substance in the solder resist composition, the crosslinking of the carboxyl group and the epoxy group easily proceeds due to heat during drying. Therefore, when it is desired to suppress the crosslinking reaction and increase the drying time, it is desirable to use a hardly soluble epoxy resin alone or together with a readily soluble epoxy resin.
(有機溶剤)
本発明で使用される(G)は、ソルダーレジスト組成物を塗布しやすい状態にし、これを基材等に塗布後乾燥させて塗膜を形成するために用いられる。このような有機溶剤(G)としては、メチルエチルケトン、シクロヘキサノンなどのケトン類;トルエン、キシレン、テトラメチルベンゼンなどの芳香族炭化水素類;メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、メチルカルビトール、ブチルカルビトール、プロピレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジプロプレングリコールモノエチルエーテル、トリエチレングリコールモノエチルエーテルなどのグリコールエーテル類;酢酸エチル、酢酸ブチル、セロソルブアセテート、ジエチレングリコールモノエチルエーテルアセテート及び上記グリコールエーテル類のエステル化物などのエステル類;エタノール、プロパノール、エチレングリコール、プロピレングリコールなどのアルコール類;オクタン、デカンなどの脂肪族炭化水素類;石油エーテル、石油ナフサ、水添石油ナフサ、ソルベントナフサなどの石油系溶剤等を挙げることができる。
(Organic solvent)
(G) used by this invention is used in order to make a soldering resist composition easy to apply | coat, and after applying this to a base material etc. and drying, it forms a coating film. Examples of the organic solvent (G) include ketones such as methyl ethyl ketone and cyclohexanone; aromatic hydrocarbons such as toluene, xylene and tetramethylbenzene; methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl carbitol, butyl carbitol, Glycol ethers such as propylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monoethyl ether; ethyl acetate, butyl acetate, cellosolve acetate, diethylene glycol monoethyl ether acetate and esters of the above glycol ethers Esters such as compounds; alcohols such as ethanol, propanol, ethylene glycol, and propylene glycol Le acids; can be exemplified petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha, a petroleum solvent or the like, such as solvent naphtha; octane, aliphatic hydrocarbons such as decane.
前記有機溶剤(G)は、単独で又は2種以上の混合物として用いることができる。有機溶剤(G)の配合量は、芳香環を有さないカルボキシル基含有樹脂(A)100質量部に対して、20〜300質量部が好ましい。 The organic solvent (G) can be used alone or as a mixture of two or more. As for the compounding quantity of an organic solvent (G), 20-300 mass parts is preferable with respect to 100 mass parts of carboxyl group-containing resin (A) which does not have an aromatic ring.
(チオキサントン系光重合増感剤)
本発明では露光時の光に対する感度を向上させる目的で、チオキサントン系光重合増感剤(H)を配合することが望ましい。上記ビスアシルフォスフィンオキサイド系光重合開始剤(B)と上記モノアシルフォスフィンオキサイド系光重合開始剤(C)を併用した組成では、チオキサントン系光重合増感剤(H)の効果が非常に高いからである。このチオキサントン系光重合増感剤(H)としては、チオキサントン、2−エチルチオキサントン、2−イソプロピルチオキサントン、2−クロロチオキサントン、2,4−ジメチルチオキサントン、2,4−ジエチルチオキサントン、2,4−ジイソプロピルチオキサントン等が挙げられる。
(Thioxanthone photopolymerization sensitizer)
In the present invention, it is desirable to blend a thioxanthone photopolymerization sensitizer (H) for the purpose of improving the sensitivity to light during exposure. In the composition in which the bisacylphosphine oxide photopolymerization initiator (B) and the monoacylphosphine oxide photopolymerization initiator (C) are used in combination, the effect of the thioxanthone photopolymerization sensitizer (H) is very high. Because it is expensive. As this thioxanthone photopolymerization sensitizer (H), thioxanthone, 2-ethylthioxanthone, 2-isopropylthioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropyl Examples include thioxanthone.
このようなチオキサントン系光重合増感剤(H)の配合量は芳香環を有さないカルボキシル基含有樹脂(A)100質量部に対して好ましくは0.05〜2質量部、より好ましくは0.1〜1質量部である。当該配合量が0.05質量部未満では感度向上の効果が少なく、2質量部を超えるとチオキサントン由来の塗膜の色つきが大きくなる。 The amount of such a thioxanthone photopolymerization sensitizer (H) is preferably 0.05 to 2 parts by mass, more preferably 0 with respect to 100 parts by mass of the carboxyl group-containing resin (A) having no aromatic ring. .1 to 1 part by mass. When the blending amount is less than 0.05 parts by mass, the effect of improving the sensitivity is small, and when it exceeds 2 parts by mass, coloring of the coating film derived from thioxanthone increases.
(他の成分)
(安定剤)
さらに、本発明のソルダーレジスト組成物においては、ヒンダードアミン系光安定剤を含有させることにより、光劣化を減少させることができる。
(Other ingredients)
(Stabilizer)
Furthermore, in the solder resist composition of this invention, photodegradation can be reduced by including a hindered amine light stabilizer.
ヒンダードアミン系光安定剤としては、例えば、チヌビン622LD、チヌビン144;CHIMASSORB 944LD、CHIMASSORB 119FL(以上いずれもチバ・ジャパン株式会社製);MARK LA−57、LA−62、LA−67、LA−63、LA−68(以上いずれも株式会社ADEKA製);サノールLS−770、LS−765、LS−292、LS−2626、LS−1114、LS−744(以上いずれも三共ライフテック株式会社製)などが挙げられる。 As a hindered amine light stabilizer, for example, Tinuvin 622LD, Tinuvin 144; CHIMASSORB 944LD, CHIMASSORB 119FL (all manufactured by Ciba Japan Co., Ltd.); LA-68 (all manufactured by ADEKA Corporation); Sanol LS-770, LS-765, LS-292, LS-2626, LS-1114, LS-744 (all manufactured by Sankyo Lifetech Co., Ltd.) Can be mentioned.
上記光安定剤は、芳香環を有さないカルボキシル基含有樹脂(A)100質量部に対して0.1〜10質量部添加することが好ましい。 The light stabilizer is preferably added in an amount of 0.1 to 10 parts by mass with respect to 100 parts by mass of the carboxyl group-containing resin (A) having no aromatic ring.
(分散剤)
本発明のソルダーレジスト組成物においては、分散剤を含有させることにより酸化チタンの分散性、沈降性を改善することができる。分散剤としては、例えば、ANTI−TERRA−U、ANTI−TERRA−U100、ANTI−TERRA−204、ANTI−TERRA−205、DISPERBYK−101、DISPERBYK−102、DISPERBYK−103、DISPERBYK−106、DISPERBYK−108、DISPERBYK−109、DISPERBYK−110、DISPERBYK−111、DISPERBYK−112、DISPERBYK−116、DISPERBYK−130、DISPERBYK−140、DISPERBYK−142、DISPERBYK−145、DISPERBYK−161、DISPERBYK−162、DISPERBYK−163、DISPERBYK−164、DISPERBYK−166、DISPERBYK−167、DISPERBYK−168、DISPERBYK−170、DISPERBYK−171、DISPERBYK−174、DISPERBYK−180、DISPERBYK−182、DISPERBYK−183、DISPERBYK−185、DISPERBYK−184、DISPERBYK−2000、DISPERBYK−2001、DISPERBYK−2009、DISPERBYK−2020、DISPERBYK−2025、DISPERBYK−2050、DISPERBYK−2070、DISPERBYK−2096、DISPERBYK−2150、BYK−P104、BYK−P104S、BYK−P105、BYK−9076、BYK−9077、BYK−220S(ビックケミー・ジャパン株式会社製)、ディスパロン2150、ディスパロン1210、ディスパロンKS−860、ディスパロンKS−873N、ディスパロン7004、ディスパロン1830、ディスパロン1860、ディスパロン1850、ディスパロンDA−400N、ディスパロンPW−36、ディスパロンDA−703−50(楠本化成株式会社製)、フローレンG−450、フローレンG−600、フローレンG−820、フローレンG−700、フローレンDOPA−44、フローレンDOPA−17(共栄社化学株式会社製)が挙げられる。
(Dispersant)
In the solder resist composition of the present invention, the dispersibility and sedimentation of titanium oxide can be improved by containing a dispersant. Examples of the dispersing agent include, for example, ANTI-TERRA-U, ANTI-TERRA-U100, ANTI-TERRA-204, ANTI-TERRA-205, DISPERBYK-101, DISPERBYK-102, DISPERBYK-103, DISPERBYK-106, DISPERBYK-108. DISPERBYK-109, DISPERBYK-110, DISPERBYK-111, DISPERBYK-112, DISPERBYK-116, DISPERBYK-130, DISPERBYK-140, DISPERBYK-142, DISPERBYK-145, DISPERBYK-161, DISPERBY63-62 -164, DISPERBYK- 66, DISPERBYK-167, DISPERBYK-168, DISPERBYK-170, DISPERBYK-171, DISPERBYK-174, DISPERBYK-180, DISPERBYK-182, DISPERBYK-183, DISPERBYK-185, DISPERBYK-184, DISPERBYK-184, DISPERBYK-2009, DISPERBYK-2020, DISPERBYK-2025, DISPERBYK-2050, DISPERBYK-2070, DISPERBYK-2096, DISPERBYK-2150, BYK-P104, BYK-P104S, BYK-P105, BYK-P105, BYK-P105, BYK-P105 220S Manufactured by Big Chemie Japan Co., Ltd.), Dispalon 2150, Disparon 1210, Disparon KS-860, Disparon KS-873N, Disparon 7004, Disparon 1830, Disparon 1860, Disparon 1850, Disparon DA-400N, Disparon PW-36, Disparon DA-703 -50 (made by Enomoto Kasei Co., Ltd.), florene G-450, florene G-600, florene G-820, florene G-700, florene DOPA-44, florene DOPA-17 (manufactured by Kyoeisha Chemical Co., Ltd.).
分散剤の含有量は、上記の目的を有効に達成するために、ルチル型酸化チタン(E)100質量部に対して、0.1〜10質量部、好ましくは0.5〜5質量部が好ましい。 The content of the dispersant is 0.1 to 10 parts by mass, preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of rutile-type titanium oxide (E) in order to effectively achieve the above object. preferable.
(その他の添加成分)
さらに、本発明のソルダーレジスト組成物には、必要に応じて、硬化促進剤、熱重合禁止剤、増粘剤、消泡剤、レベリング剤、カップリング剤、難燃助剤等が使用できる。
(Other additive components)
Furthermore, in the solder resist composition of the present invention, a curing accelerator, a thermal polymerization inhibitor, a thickener, an antifoaming agent, a leveling agent, a coupling agent, a flame retardant aid and the like can be used as necessary.
(製法)
以下にソルダーレジスト組成物の使用の一例として、プリント配線板の製造について説明する。
(Manufacturing method)
As an example of the use of the solder resist composition, the production of a printed wiring board will be described below.
まず、本発明のソルダーレジスト組成物を、必要に応じて希釈して塗布方法に適した粘度に調整する。 First, the solder resist composition of the present invention is diluted as necessary to adjust the viscosity to be suitable for the coating method.
次に、粘度調整した組成物を、回路形成されたプリント配線板に、スクリーン印刷法、カーテンコート法、スプレーコート法、ロールコート法等の方法により塗布する。そして、例えば70〜90℃の温度で、塗布した組成物中に含まれる有機溶剤を揮発乾燥させることにより、タックフリーの塗膜を形成する。 Next, the viscosity-adjusted composition is applied to a printed wiring board on which a circuit has been formed by a method such as screen printing, curtain coating, spray coating, or roll coating. And a tack-free coating film is formed by evaporating and drying the organic solvent contained in the applied composition at a temperature of 70 to 90 ° C., for example.
その後、当該塗膜にフォトマスクを通して選択的に活性エネルギー線により露光し、未露光部をアルカリ水溶液により現像してレジストパターンを形成する。そしてこのレジストパターンを100℃〜200℃で熱硬化することにより、ソルダーレジストパターンを形成する。 Thereafter, the coating film is selectively exposed with active energy rays through a photomask, and the unexposed portion is developed with an alkaline aqueous solution to form a resist pattern. And this solder resist pattern is formed by thermosetting this resist pattern at 100 to 200 degreeC.
露光するための照射光源としては、低圧水銀灯、中圧水銀灯、高圧水銀灯、超高圧水銀灯、キセノンランプ又はメタルハライドランプなどを用いることができる。その他、レーザー光線なども活性光線として利用できる。 As an irradiation light source for exposure, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a xenon lamp, a metal halide lamp, or the like can be used. In addition, a laser beam can also be used as an actinic beam.
現像液であるアルカリ水溶液としては、0.5〜5質量%の炭酸ナトリウム水溶液が一般的である。他のアルカリ水溶液を使用することも可能である。他のアルカリ水溶液としては、例えば、水酸化カリウム、水酸化ナトリウム、炭酸カリウム、リン酸ナトリウム、ケイ酸ナトリウム、アンモニア、アミン類等のアルカリ水溶液を挙げることができる。 As the alkaline aqueous solution that is a developer, a 0.5 to 5% by mass aqueous sodium carbonate solution is common. It is also possible to use other alkaline aqueous solutions. Examples of other alkaline aqueous solutions include alkaline aqueous solutions such as potassium hydroxide, sodium hydroxide, potassium carbonate, sodium phosphate, sodium silicate, ammonia, amines and the like.
そして、ソルダーレジストパターンを形成した後、LEDを実装して本発明に係るプリント配線板を製造する。このような本発明に係るプリント配線板は、本発明の反射率の高い酸化チタンを含有するソルダーレジストを用いて作製されており、高反射率で高精細なパターンを有するものである。 And after forming a soldering resist pattern, LED is mounted and the printed wiring board which concerns on this invention is manufactured. Such a printed wiring board according to the present invention is manufactured using the solder resist containing titanium oxide having high reflectivity according to the present invention, and has a high reflectivity and high definition pattern.
以下、実施例及び比較例を示して、本発明を具体的に説明するが、本発明はこれに限定されるものではないことはもとよりである。 EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, it cannot be overemphasized that this invention is not limited to this.
(A)芳香環を有さないカルボキシル基含有樹脂の合成
合成例1
攪拌機、温度計、還流冷却器、滴下ロートおよび窒素導入管を備えた2リットルセパラブルフラスコに、溶媒としてジエチレングリコールジメチルエーテル900g、および重合開始剤としてt−ブチルパーオキシ2−エチルヘキサノエート(日油株式会社製、商品名;パーブチルO)21.4gを加えて90℃に加熱した。加熱後、ここに、メタクリル酸309.9g、メタクリル酸メチル116.4g、およびラクトン変性2−ヒドロキシエチルメタクリレート(ダイセル化学工業株式会社製、商品名;プラクセルFM1)109.8gを、重合開始剤であるビス(4−t−ブチルシクロヘキシル)パーオキシジカーボネート(日油株式会社製、商品名;パーロイルTCP、)21.4gと共に3時間かけて滴下して加えた。さらにこれを6時間熟成することにより、カルボキシル基含有共重合樹脂を得た。なお、これらの反応は、窒素雰囲気下で行った。
(A) Synthesis of carboxyl group-containing resin having no aromatic ring Synthesis Example 1
In a 2 liter separable flask equipped with a stirrer, a thermometer, a reflux condenser, a dropping funnel and a nitrogen introducing tube, 900 g of diethylene glycol dimethyl ether as a solvent and t-butylperoxy 2-ethylhexanoate (NOF) as a polymerization initiator 21.4 g, manufactured by Co., Ltd., trade name: Perbutyl O) was added and heated to 90 ° C. After heating, 309.9 g of methacrylic acid, 116.4 g of methyl methacrylate, and 109.8 g of lactone-modified 2-hydroxyethyl methacrylate (manufactured by Daicel Chemical Industries, Ltd., trade name: Plaxel FM1) were used as a polymerization initiator. Along with 21.4 g of a certain bis (4-t-butylcyclohexyl) peroxydicarbonate (manufactured by NOF Corporation, trade name: Parroyl TCP), it was added dropwise over 3 hours. Further, this was aged for 6 hours to obtain a carboxyl group-containing copolymer resin. These reactions were performed in a nitrogen atmosphere.
次に、得られたカルボキシル基含有共重合樹脂に、3,4−エポキシシクロヘキシルメチルアクリレート(ダイセル化学株式会社製、商品名;サイクロマーA200)363.9g、開環触媒としてジメチルベンジルアミン3.6g、重合抑制剤としてハイドロキノンモノメチルエーテル1.80gを加え、100℃に加熱し、これを攪拌することによりエポキシの開環付加反応を行った。16時間後、固形分の酸価が108.9mgKOH/g、重量平均分子量が25,000の、芳香環を有さないカルボキシル基含有樹脂を53.8質量%(不揮発分)含む溶液を得た。以下、この反応溶液をA−1ワニスと呼ぶ。 Next, 363.9 g of 3,4-epoxycyclohexylmethyl acrylate (trade name; Cyclomer A200, manufactured by Daicel Chemical Industries, Ltd.) and 3.6 g of dimethylbenzylamine as a ring-opening catalyst were added to the obtained carboxyl group-containing copolymer resin. Then, 1.80 g of hydroquinone monomethyl ether was added as a polymerization inhibitor, heated to 100 ° C., and stirred to carry out an epoxy ring-opening addition reaction. After 16 hours, a solution containing 53.8% by mass (nonvolatile content) of a carboxyl group-containing resin having no aromatic ring and having an acid value of solid content of 108.9 mgKOH / g and a weight average molecular weight of 25,000 was obtained. . Hereinafter, this reaction solution is referred to as A-1 varnish.
合成例2
温度計、攪拌機、滴下ロート、および還流冷却器を備えたフラスコに、溶媒としてジエチレングリコールモノエチルエーテルアセテート、触媒としてアゾビスイソブチロニトリルを入れ、窒素雰囲気下、これを80℃に加熱し、メタアクリル酸とメチルメタアクリレートを0.40:0.60のモル比で混合したモノマーを約2時間かけて滴下した。さらにこれを1時間攪拌した後、温度を115℃にまで上げ、失活させて樹脂溶液を得た。
Synthesis example 2
In a flask equipped with a thermometer, a stirrer, a dropping funnel, and a reflux condenser, diethylene glycol monoethyl ether acetate as a solvent and azobisisobutyronitrile as a catalyst are heated to 80 ° C. in a nitrogen atmosphere. A monomer in which acrylic acid and methyl methacrylate were mixed at a molar ratio of 0.40: 0.60 was added dropwise over about 2 hours. Furthermore, after stirring this for 1 hour, the temperature was raised to 115 ° C. and deactivated to obtain a resin solution.
この樹脂溶液を冷却後、これを触媒として臭化テトラブチルアンモニウムを用い、95〜105℃で30時間の条件で、ブチルグリシジルエーテルを0.40のモル比で、得られた樹脂のカルボキシル基の等量と付加反応させ、冷却した。 After cooling the resin solution, tetrabutylammonium bromide was used as a catalyst, and butyl glycidyl ether was added at a molar ratio of 0.40 at 95 to 105 ° C. for 30 hours. Addition reaction with an equal volume and cooling.
さらに、上記で得られた樹脂のOH基に対して、95〜105℃で8時間の条件で、無水テトラヒドロフタル酸を0.26のモル比で付加反応させた。これを冷却後取り出して、固形分の酸価が78.1mgKOH/g、重量平均分子量が35,000の芳香環を有さないカルボキシル基含有樹脂を50質量%(不揮発分)含む溶液を得た。以下、この反応溶液をA−2ワニスと呼ぶ。 Furthermore, tetrahydrophthalic anhydride was subjected to addition reaction at a molar ratio of 0.26 under the condition of 95 to 105 ° C. for 8 hours with respect to the OH group of the resin obtained above. This was taken out after cooling to obtain a solution containing 50% by mass (non-volatile content) of a carboxyl group-containing resin having an aromatic ring with a solid content of 78.1 mgKOH / g and a weight average molecular weight of 35,000 and having no aromatic ring. . Hereinafter, this reaction solution is called A-2 varnish.
芳香環を有するカルボキシル基含有樹脂の合成
比較合成例1
温度計、攪拌器、滴下ロート、および還流冷却器を備えたフラスコに、クレゾールノボラック型エポキシ樹脂(DIC株式会社製エピクロンN−680、エポキシ当量=210)210gと、溶媒としてのカルビトールアセテート96.4gとを加え、加熱溶解させた。続いて、これに重合禁止剤としてハイドロキノン0.1g、反応触媒としてトリフェニルホスフィン2.0gを加えた。この混合物を95〜105℃に加熱し、アクリル酸72gを徐々に滴下し、酸価が3.0mgKOH/g以下となるまで、約16時間反応させた。この反応生成物を、80〜90℃にまで冷却した後、テトラヒドロフタル酸無水物76.1gを加え、赤外吸光分析により、酸無水物の吸収ピーク(1780cm−1)が無くなるまで、約6時間反応させた。この反応溶液に、出光興産株式会社製の芳香族系溶剤イプゾール#150を96.4g加え、希釈した後取り出した。このようにして得られたカルボキシル基含有の感光性ポリマー溶液は、不揮発分が65重量%、固形物の酸価が78mgKOH/gであった。以下、この反応溶液をB−1ワニスと呼ぶ。
Synthetic comparison synthesis example 1 of carboxyl group-containing resin having aromatic ring
In a flask equipped with a thermometer, a stirrer, a dropping funnel, and a reflux condenser, 210 g of cresol novolac type epoxy resin (Epiclon N-680 manufactured by DIC Corporation, epoxy equivalent = 210) and carbitol acetate 96. 4 g was added and dissolved by heating. Subsequently, 0.1 g of hydroquinone as a polymerization inhibitor and 2.0 g of triphenylphosphine as a reaction catalyst were added thereto. This mixture was heated to 95-105 ° C., 72 g of acrylic acid was gradually added dropwise, and the mixture was reacted for about 16 hours until the acid value became 3.0 mgKOH / g or less. The reaction product was cooled to 80 to 90 ° C., 76.1 g of tetrahydrophthalic anhydride was added, and the infrared absorption analysis showed about 6 until the acid anhydride absorption peak (1780 cm −1) disappeared. Reacted for hours. To this reaction solution, 96.4 g of aromatic
実施例1〜5及び比較例1〜5の配合:
表1に従って各成分を配合、攪拌して3本ロールにて分散させてそれぞれソルダーレジスト組成物を作製した。表中の数字は、質量部を示す。
Each component was blended according to Table 1, stirred, and dispersed with a three roll to prepare solder resist compositions. The numbers in the table indicate parts by mass.
光重合開始剤A1:ビス−(2,4,6−トリメチルベンゾイル)フェニルフォスフィンオキサイド イルガキュア819(チバ・ジャパン社製)
光重合開始剤A2:2,4,6−トリメチルベンゾイルジフェニルフォスフィンオキサイド ダロキュアTPO(チバ・ジャパン社製)
光重合開始剤B1:イルガキュア907(チバ・ジャパン社製)
光重合性モノマー:ジペンタエリスリトールヘキサアクリレート
酸化チタンA:ルチル型酸化チタン CR−95(石原産業社製)
酸化チタンB:アナターゼ型酸化チタン A−220(石原産業社製)
エポキシ化合物:TEPIC−H(日産化学社製)
熱硬化促進剤:ジシアンジアミド
増感剤:2,4−ジエチルチオキサントン カヤキュアーDETX−S(日本化薬社製)
溶剤:カルビトールアセテート
消泡剤(シリコーンオイル):KS−66(信越化学製)
各ソルダーレジスト組成物を用いて形成されるソルダーレジストの諸性質を調べるために、以下の試験、および評価を行った。
Photopolymerization initiator A1: Bis- (2,4,6-trimethylbenzoyl) phenylphosphine oxide Irgacure 819 (manufactured by Ciba Japan)
Photopolymerization initiator A2: 2,4,6-trimethylbenzoyldiphenylphosphine oxide Darocure TPO (manufactured by Ciba Japan)
Photopolymerization initiator B1: Irgacure 907 (Ciba Japan)
Photopolymerizable monomer: Dipentaerythritol hexaacrylate titanium oxide A: Rutile titanium oxide CR-95 (manufactured by Ishihara Sangyo Co., Ltd.)
Titanium oxide B: Anatase type titanium oxide A-220 (Ishihara Sangyo Co., Ltd.)
Epoxy compound: TEPIC-H (Nissan Chemical Co., Ltd.)
Thermosetting accelerator: Dicyandiamide sensitizer: 2,4-diethylthioxanthone Kayacure DETX-S (manufactured by Nippon Kayaku Co., Ltd.)
Solvent: Carbitol acetate antifoaming agent (silicone oil): KS-66 (manufactured by Shin-Etsu Chemical)
In order to examine various properties of the solder resist formed using each solder resist composition, the following tests and evaluations were performed.
(1)解像性(断面形状)
各ソルダーレジスト組成物を、100mm×150mmの大きさで1.6mmの厚さのFR−4銅張り積層板に対し、スクリーン印刷法にて、100メッシュポリエステル(バイアス製)の版を使用してベタ(基板全面)で印刷した。これを80℃で10分間、熱風循環式乾燥炉にて乾燥させた。さらにそれぞれの上記乾燥塗膜に、同様の方法でソルダーレジスト組成物を重ねて印刷して、80℃で20分間熱風循環式乾燥炉にて乾燥させた。さらにプリント配線板用露光機HMW−680GW(株式会社オーク製作所製)を用いて、ネガの寸法が250μmのラインのマスクパターンを使用し、実施例1と2と5、比較例1〜3と5については450mJ/cm2、実施例3と4、比較例4については900mJ/cm2の積算光量で、マスクと乾燥させたソルダーレジストを密着させる方法で紫外線露光した。その後、30℃で1%の炭酸ナトリウム水溶液を現像液として、これらをプリント配線板用現像機にて60秒間現像した。さらに続いて、これらについて150℃で60分間、熱風循環式乾燥炉で熱硬化を行い、各試験片を作製した。これらの試験片のラインについて断面形状を顕微鏡にて、マスクと接触した上面と基材に接している基材面を測定した。次に、各試験片について表面粗さ計で膜厚も測定した。また、各試験片について観察された形状について目視による判定を行なった。この判定では、断面の形状がほぼ四角形であるものを○、張り出しやアンダーカットが大きく、明らかに逆台形であるものを×とした。結果を表2に示す。単位はμmである。
Each solder resist composition was 100 mm × 150 mm in size and 1.6 mm thick on an FR-4 copper-clad laminate using a screen printing method using a 100 mesh polyester (made by Bias) plate. It was printed with a solid (entire substrate surface). This was dried at 80 ° C. for 10 minutes in a hot air circulating drying oven. Further, a solder resist composition was printed on each of the dried coating films in the same manner as described above, and dried at 80 ° C. for 20 minutes in a hot air circulation type drying furnace. Furthermore, using an exposure machine HMW-680GW for printed wiring board (manufactured by Oak Manufacturing Co., Ltd.), using a mask pattern of a line with a negative dimension of 250 μm, Examples 1 and 2 and Comparative Examples 1 to 3 and 5 the 450 mJ / cm 2, example 3 and 4, in the integrated light quantity of 900 mJ / cm 2 for Comparative example 4 was exposed to ultraviolet rays by a method of adhering the solder resist is dried and the mask. Thereafter, these were developed with a 1% sodium carbonate aqueous solution as a developer at 30 ° C. for 60 seconds in a developing machine for printed wiring boards. Subsequently, these were heat-cured in a hot-air circulating drying furnace at 150 ° C. for 60 minutes to prepare test pieces. With respect to the lines of these test pieces, the cross-sectional shape was measured with a microscope on the upper surface in contact with the mask and the substrate surface in contact with the substrate. Next, the film thickness was also measured for each test piece with a surface roughness meter. Moreover, the visual observation was performed about the shape observed about each test piece. In this determination, a cross section having a substantially square shape was indicated by “◯”, and an overhang or undercut having a large reverse trapezoid was clearly indicated by “X”. The results are shown in Table 2. The unit is μm.
表2によると、実施例1〜5、また比較例でもビスアシルフォスフィンオキサイド系光重合開始剤(B)とモノアシルフォスフィンオキサイド系光重合開始剤(C)を併用したものは、ラインの断面形状で上面と基材面の寸法の差が小さく、断面形状がほぼ四角形あり、優れた解像性が得られている。 According to Table 2, Examples 1 to 5 and Comparative Examples also used a bisacylphosphine oxide photopolymerization initiator (B) and a monoacylphosphine oxide photopolymerization initiator (C) in combination. The cross-sectional shape has a small difference in dimensions between the upper surface and the base material surface, and the cross-sectional shape is almost square, so that excellent resolution is obtained.
(2)耐光・耐熱変色性
解像性試験で良好であった実施例1〜5および、比較例1と5のソルダーレジスト組成物について、100mm×150mmの大きさで1.6mmの厚さのFR−4銅張り積層板に対し、スクリーン印刷法にて、膜厚40μmとなるように、100メッシュポリエステル(バイアス製)の版を使用してベタ(基板全面)でパターンを印刷した。そして、これらを80℃で30分間に渡って熱風循環式乾燥炉にて乾燥させた。さらにこれらをプリント配線板用露光機HMW−680GW(株式会社オーク製作所製)を用いて、30mm角のネガパターンを残すように、900mJ/cm2の積算光量で紫外線露光した。その後、30℃で1%の炭酸ナトリウム水溶液を現像液として、これらをプリント配線板用現像機にて60秒間現像し、続いて150℃で60分間、熱風循環式乾燥炉で熱硬化を行い、特性試験用の各試験片を作製した。
(2) Light resistance and heat discoloration resistance The solder resist compositions of Examples 1 to 5 and Comparative Examples 1 and 5 that were good in the resolution test were 100 mm × 150 mm in size and 1.6 mm in thickness. A pattern was printed on the FR-4 copper-clad laminate by a screen printing method using a 100-mesh polyester (made by Bias) plate so that the film thickness was 40 μm. Then, these were dried at 80 ° C. for 30 minutes in a hot air circulation type drying furnace. Furthermore, these were exposed to ultraviolet rays with an integrated light quantity of 900 mJ / cm 2 so as to leave a 30 mm square negative pattern using an exposure machine HMW-680GW (manufactured by Oak Manufacturing Co., Ltd.). Thereafter, 1% sodium carbonate aqueous solution is used as a developing solution at 30 ° C., and these are developed for 60 seconds with a developing machine for printed wiring boards. Subsequently, heat curing is performed at 150 ° C. for 60 minutes in a hot-air circulating drying furnace. Each test piece for a characteristic test was produced.
得られた試験片を色彩色差計CR−400(コニカミノルタセンシング株式会社製)で測定した。さらに各試験片について、コンベア型UV照射機QRM−2082−E−01(株式会社オーク製作所製)を用いて、メタルハライドランプ、コールドミラー、120W/cm2×3灯、コンベアスピード3m/分(波長350nm付近の積算光量3000mJ/cm2)の条件で50回繰り返してUVを照射した。(計算上では積算光量150J/cm2となる)そして、UV照射後の各試験片について、初期値と同様の条件にて色差を測定し、劣化状態を評価した。 The obtained test piece was measured with a color difference meter CR-400 (manufactured by Konica Minolta Sensing Co., Ltd.). Further, for each test piece, using a conveyor type UV irradiator QRM-2082-E-01 (manufactured by Oak Manufacturing Co., Ltd.), metal halide lamp, cold mirror, 120 W / cm 2 × 3 lamp, conveyor speed 3 m / min (wavelength UV irradiation was repeated 50 times under the condition of an integrated light quantity of about 3000 nm (3000 mJ / cm 2 ). (In calculation, the integrated light amount is 150 J / cm 2 ) Then, for each test piece after UV irradiation, the color difference was measured under the same conditions as the initial values, and the deterioration state was evaluated.
次に、耐光試験後の各試験片を部品実装用のコンベア式加熱炉を用いて、2回繰り返し加熱した。加熱後の各試験片についても、初期値と同様の条件にて色差を測定し、各試験片の劣化状態を評価した。また、目視でも当該各試験片を評価した。それぞれの結果を表3に示す。尚、上記加熱炉の温度は図1に示す。
表3において、YはXYZ表色系の反射率を示し、L*は、L*a*b*表色系の明度を表わす。△E*abはL*a*b*の各値について、劣化試験後の値と初期値の差の二乗を取り、その総和の平方根をとったものである。a*は赤方向、−a*は緑方向、b*は黄方向、−b*は青方向を示し、ゼロに近いほど彩度がないことを示す。△E*abは、色の変化を表し、この値が小さいほど色の変化も小さいことを示す。 In Table 3, Y represents the reflectance of the XYZ color system, and L * represents the lightness of the L * a * b * color system. ΔE * ab is obtained by taking the square of the difference between the value after the deterioration test and the initial value for each value of L * a * b * and taking the square root of the sum. a * indicates the red direction, -a * indicates the green direction, b * indicates the yellow direction, and -b * indicates the blue direction. The closer to zero, the lower the saturation. ΔE * ab represents a color change, and the smaller this value, the smaller the color change.
実施例1〜5は耐光試験後も、そしてそれを加熱試験した後も△E*abの値及び目視評価について変色が少なく、良好な結果であった。 In Examples 1 to 5, both the light resistance test and the heat test were good results with little change in the value of ΔE * ab and visual evaluation.
(3)はんだ耐熱性
実施例1〜5について、(2)と同様に作製した各試験片に、ロジン系フラックスを塗布して260℃のはんだ槽で10秒間フローさせた。その後、これらをプロピレングリコールモノメチルエーテルアセテートで洗浄して乾燥させた後に、セロハン粘着テープによるピールテストを行い、塗膜の剥がれについて評価した。この評価では、剥がれが無いものを○、剥がれがあるものを×とした。結果を表4に示す。
(3) Solder heat resistance About Examples 1-5, the rosin-type flux was apply | coated to each test piece produced similarly to (2), and it was made to flow for 10 second in a 260 degreeC solder tank. Thereafter, these were washed with propylene glycol monomethyl ether acetate and dried, and then a peel test with a cellophane adhesive tape was performed to evaluate the peeling of the coating film. In this evaluation, the case where there was no peeling was rated as “◯” and the case where there was peeling as “X”. The results are shown in Table 4.
(4)耐溶剤性
実施例1〜5について、(2)と同様に作製した各試験片を、プロピレングリコールモノメチルエーテルアセテートに30分間浸漬し、乾燥させた後に、セロハン粘着テープによるピールテストを行い、塗膜の剥がれについて評価した。この評価では、剥がれが無いものを○、剥がれがあるものを×とした。結果を表4に示す。
(4) Solvent resistance For each of Examples 1 to 5, each test piece prepared in the same manner as (2) was immersed in propylene glycol monomethyl ether acetate for 30 minutes and dried, and then a peel test using a cellophane adhesive tape was performed. The film peeling was evaluated. In this evaluation, the case where there was no peeling was rated as “◯” and the case where there was peeling as “X”. The results are shown in Table 4.
(5)鉛筆硬度試験
実施例1〜5について、(2)と同様に作製した各試験片に、芯の先が平らになるように研がれたBから9Hの鉛筆を、約45°の角度で押し付けて、塗膜の剥がれが生じない鉛筆の硬さを記録した。結果を表4に示す。
(5) Pencil hardness test About Examples 1-5, the pencil of B to 9H sharpened so that the tip of a core may become flat about 45 degrees about each test piece produced like (2). Pressed at an angle, the hardness of the pencil at which the coating film did not peel off was recorded. The results are shown in Table 4.
(6)絶縁抵抗試験
実施例1〜5について、FR−4銅張り積層板の代わりにIPC B−25テストパターンのクシ型電極Bクーポンを用いること以外は(2)と同様の条件で各試験片を作製した。これらの試験片に、DC500Vのバイアスを印加し、絶縁抵抗値を測定した。値が100GΩ以上であれば○、100GΩ未満であれば×とした。結果を表4に示す。
表4から明らかなように、本発明のソルダーレジスト組成物を用いた実施例1〜5においては、ソルダーレジストに要求される良好な耐熱性、耐溶剤性、密着性および電気絶縁性を有することがわかった。 As is clear from Table 4, Examples 1 to 5 using the solder resist composition of the present invention have good heat resistance, solvent resistance, adhesion and electrical insulation required for the solder resist. I understood.
以上詳述した通り、本発明のソルダーレジスト組成物は、酸化チタンを配合しても解像性に優れることが分かった。また、本発明のソルダーレジスト組成物を用いて形成されたソルダーレジストは、光や熱による変色が少なく、高反射率に優れるものであった。 As described above in detail, it has been found that the solder resist composition of the present invention is excellent in resolution even when titanium oxide is blended. Moreover, the solder resist formed using the solder resist composition of the present invention has little discoloration due to light and heat, and is excellent in high reflectance.
Claims (9)
上記硬化物は、
(A)芳香環を有さないカルボキシル基含有樹脂、(B)ビスアシルフォスフィンオキサイド系光重合開始剤、(C)モノアシルフォスフィンオキサイド系光重合開始剤、(D)光重合性モノマー、および(E)ルチル型酸化チタンを含むことを特徴とするプリント配線板。 In a printed wiring board provided with a base material on which a cured product of a solder resist composition is formed,
The cured product is
(A) carboxyl group-containing resin having no aromatic ring, (B) bisacylphosphine oxide photopolymerization initiator, (C) monoacylphosphine oxide photopolymerization initiator, (D) photopolymerizable monomer, And (E) a printed wiring board comprising rutile titanium oxide.
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KR1020100044824A KR101718996B1 (en) | 2010-02-17 | 2010-05-13 | Solder resist composition and printed wiring board |
CN2010101751368A CN101980081A (en) | 2010-02-17 | 2010-05-14 | Solder resist composition and printed circuit board |
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JP2011227308A (en) * | 2010-04-20 | 2011-11-10 | Taiyo Holdings Co Ltd | Solder resist composition and print circuit board |
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JP5688129B1 (en) * | 2013-09-30 | 2015-03-25 | 太陽インキ製造株式会社 | Curable composition for printed wiring board, cured coating film using the same, and printed wiring board |
CN106028668A (en) * | 2016-05-05 | 2016-10-12 | 广合科技(广州)有限公司 | Printed circuit board preparing method preventing discoloration of solder resist layer |
CN114442425A (en) * | 2020-10-30 | 2022-05-06 | 常州正洁智造科技有限公司 | Curable resin composition, solder resist film formed from the same, interlayer insulating material, and printed wiring board |
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