JP2011155044A - 真空処理装置 - Google Patents

真空処理装置 Download PDF

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Publication number
JP2011155044A
JP2011155044A JP2010014130A JP2010014130A JP2011155044A JP 2011155044 A JP2011155044 A JP 2011155044A JP 2010014130 A JP2010014130 A JP 2010014130A JP 2010014130 A JP2010014130 A JP 2010014130A JP 2011155044 A JP2011155044 A JP 2011155044A
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Japan
Prior art keywords
gas
vacuum processing
set value
processing apparatus
flow rate
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JP2010014130A
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Japanese (ja)
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JP2011155044A5 (enExample
Inventor
Masamichi Sakaguchi
正道 坂口
Yasuhiro Nishimori
康博 西森
Shingo Kimura
伸吾 木村
Yoshiharu Inoue
喜晴 井上
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to JP2010014130A priority Critical patent/JP2011155044A/ja
Publication of JP2011155044A publication Critical patent/JP2011155044A/ja
Publication of JP2011155044A5 publication Critical patent/JP2011155044A5/ja
Pending legal-status Critical Current

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JP2010014130A 2010-01-26 2010-01-26 真空処理装置 Pending JP2011155044A (ja)

Priority Applications (1)

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JP2010014130A JP2011155044A (ja) 2010-01-26 2010-01-26 真空処理装置

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JP2010014130A JP2011155044A (ja) 2010-01-26 2010-01-26 真空処理装置

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JP2011155044A true JP2011155044A (ja) 2011-08-11
JP2011155044A5 JP2011155044A5 (enExample) 2013-01-17

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JP2010014130A Pending JP2011155044A (ja) 2010-01-26 2010-01-26 真空処理装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239513A (ja) * 2012-05-14 2013-11-28 Tokyo Electron Ltd 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体
JP2016092342A (ja) * 2014-11-11 2016-05-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017216391A (ja) * 2016-06-01 2017-12-07 東京エレクトロン株式会社 基板処理方法
KR20200007699A (ko) * 2018-07-13 2020-01-22 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035929A (ja) * 2005-07-27 2007-02-08 Sumitomo Precision Prod Co Ltd エッチング方法及びエッチング装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035929A (ja) * 2005-07-27 2007-02-08 Sumitomo Precision Prod Co Ltd エッチング方法及びエッチング装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239513A (ja) * 2012-05-14 2013-11-28 Tokyo Electron Ltd 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体
CN103426746A (zh) * 2012-05-14 2013-12-04 东京毅力科创株式会社 基板处理方法和基板处理装置
KR101739611B1 (ko) * 2012-05-14 2017-05-24 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치, 기판 처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
TWI594313B (zh) * 2012-05-14 2017-08-01 Tokyo Electron Ltd Substrate processing method, substrate processing apparatus, substrate processing program and memory medium
JP2016092342A (ja) * 2014-11-11 2016-05-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2017216391A (ja) * 2016-06-01 2017-12-07 東京エレクトロン株式会社 基板処理方法
KR20200007699A (ko) * 2018-07-13 2020-01-22 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
KR102326735B1 (ko) 2018-07-13 2021-11-17 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치

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