JP2011146524A5 - - Google Patents

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JP2011146524A5
JP2011146524A5 JP2010006035A JP2010006035A JP2011146524A5 JP 2011146524 A5 JP2011146524 A5 JP 2011146524A5 JP 2010006035 A JP2010006035 A JP 2010006035A JP 2010006035 A JP2010006035 A JP 2010006035A JP 2011146524 A5 JP2011146524 A5 JP 2011146524A5
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recess
die pad
lead frame
semiconductor element
lead
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JP2010006035A
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JP5573176B2 (en
JP2011146524A (en
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Claims (13)

半導体素子を載置するリードフレームにおいて、In a lead frame for mounting a semiconductor element,
半導体素子を載置する載置面を有するダイパッドと、A die pad having a mounting surface for mounting a semiconductor element;
ダイパッド周囲に設けられるとともに導電部が接続されるボンディング面を有するリード部とを備え、A lead portion provided around the die pad and having a bonding surface to which the conductive portion is connected;
ダイパッドの載置面およびリード部のボンディング面には、外側樹脂部の脱落を防止する平面角丸矩形状のアンカー溝が形成されていることを特徴とするリードフレーム。A lead frame, wherein a mounting surface of a die pad and a bonding surface of a lead part are formed with a flat rounded rectangular anchor groove for preventing the outer resin part from dropping off.
樹脂付リードフレームにおいて、For lead frames with resin,
リードフレームと、A lead frame;
リードフレームに設けられた外側樹脂部とを備え、An outer resin portion provided on the lead frame,
リードフレームは、The lead frame is
半導体素子を載置する載置面を有するダイパッドと、A die pad having a mounting surface for mounting a semiconductor element;
ダイパッド周囲に設けられるとともに導電部が接続されるボンディング面を有するリード部とを有し、A lead portion provided around the die pad and having a bonding surface to which the conductive portion is connected;
ダイパッドの載置面およびリード部のボンディング面には、外側樹脂部の脱落を防止する平面角丸矩形状のアンカー溝が形成されていることを特徴とする樹脂付リードフレーム。A lead frame with resin, wherein a mounting surface of a die pad and a bonding surface of a lead part are formed with anchor grooves having a flat rounded rectangular shape to prevent the outer resin part from dropping off.
半導体装置において、In semiconductor devices,
ダイパッドと、ダイパッド周囲に設けられたリード部とを有するリードフレームと、A lead frame having a die pad and a lead portion provided around the die pad;
リードフレームに設けられた外側樹脂部と、An outer resin portion provided on the lead frame;
リードフレームのダイパッドに載置された半導体素子と、A semiconductor element mounted on a die pad of a lead frame;
リードフレームのリード部と半導体素子とを電気的に接続する導電部と、A conductive portion that electrically connects the lead portion of the lead frame and the semiconductor element;
半導体素子と導電部とを封止する封止樹脂部とを備え、A sealing resin portion for sealing the semiconductor element and the conductive portion;
リードフレームのダイパッドは、半導体素子を載置する載置面を有し、The die pad of the lead frame has a mounting surface on which the semiconductor element is mounted,
リード部は、導電部が接続されるボンディング面を有し、The lead portion has a bonding surface to which the conductive portion is connected,
ダイパッドの載置面およびリード部のボンディング面には、外側樹脂部の脱落を防止する平面角丸矩形状のアンカー溝が形成されていることを特徴とする半導体装置。2. A semiconductor device comprising: a mounting surface of a die pad; and a bonding surface of a lead portion, wherein a planar rounded rectangular anchor groove for preventing the outer resin portion from falling off is formed.
半導体素子を載置するリードフレームにおいて、
半導体素子を載置する載置面を有するダイパッドと、
ダイパッド周囲に設けられたリード部とを備え、
ダイパッドの載置面に、深さが浅い第1凹部と、第1凹部中央に位置するとともに深さが深い第2凹部とからなる載置凹部を形成したことを特徴とするリードフレーム。
In a lead frame on which a semiconductor element is placed,
A die pad having a mounting surface for mounting a semiconductor element;
A lead portion provided around the die pad,
A lead frame, wherein a mounting recess composed of a first recess having a shallow depth and a second recess having a deep depth at the center of the first recess is formed on the mounting surface of the die pad.
半導体素子はLED素子からなり、第1凹部の側壁は、ダイパッドの表面側から第2凹部側に向かう湾曲面を形成し、この湾曲面は、LED素子からの光を反射する反射面として機能することを特徴とする請求項記載のリードフレーム。 The semiconductor element is an LED element, and the side wall of the first recess forms a curved surface from the surface side of the die pad to the second recess side, and this curved surface functions as a reflective surface that reflects light from the LED element. The lead frame according to claim 4 . 第1凹部はエッチングにより形成され、第2凹部はプレスにより形成されることを特徴とする請求項または記載のリードフレーム。 The first recess is formed by etching, the lead frame according to claim 4 or 5, wherein the second recess is being formed by a press. 半導体装置において、
ダイパッドと、ダイパッド周囲に設けられたリード部とを有するリードフレームと、
リードフレームのダイパッドに載置された半導体素子と、
リードフレームのリード部と半導体素子とを電気的に接続する導電部と、
半導体素子と導電部とを封止する封止樹脂部とを備え、
リードフレームのダイパッドは、半導体素子を載置する載置面を有し、
ダイパッドの載置面に、深さが浅い第1凹部と、第1凹部中央に位置するとともに深さが深い第2凹部とからなる載置凹部を形成し、この載置凹部内に半導体素子を載置したことを特徴とする半導体装置。
In semiconductor devices,
A lead frame having a die pad and a lead portion provided around the die pad;
A semiconductor element mounted on a die pad of a lead frame;
A conductive portion that electrically connects the lead portion of the lead frame and the semiconductor element;
A sealing resin portion for sealing the semiconductor element and the conductive portion;
The die pad of the lead frame has a mounting surface on which the semiconductor element is mounted,
On the mounting surface of the die pad, a mounting recess composed of a first recess having a shallow depth and a second recess having a deep depth located at the center of the first recess is formed, and the semiconductor element is placed in the mounting recess. A semiconductor device characterized by being mounted.
半導体素子は、載置凹部の第2凹部内に収容された取付材料を介して載置凹部内に載置されていることを特徴とする請求項記載の半導体装置。 Semiconductor device, the semiconductor device according to claim 7, characterized in that it is mounted in the second mounting through a mounting material contained in the recess置凹of loading recess. 半導体素子はLED素子からなり、このLED素子を取り囲む凹部を有する外側樹脂部が設けられ、封止樹脂部は、外側樹脂部の凹部内に充填されていることを特徴とする請求項または記載の半導体装置。 The semiconductor device comprises an LED element, the external resin portion is provided with a recess surrounding the LED element, the sealing resin portion, claim 7 or 8, characterized in that it is filled into the recess of the external resin portion The semiconductor device described. 半導体素子はLED素子からなり、第1凹部の側壁は、ダイパッドの表面側から第2凹部側に向かう湾曲面を形成し、この湾曲面は、LED素子からの光を反射する反射面として機能することを特徴とする請求項乃至のいずれか一項記載の半導体装置。 The semiconductor element is an LED element, and the side wall of the first recess forms a curved surface from the surface side of the die pad to the second recess side, and this curved surface functions as a reflective surface that reflects light from the LED element. the semiconductor device of any one of claims 7 to 9, wherein the. 第1凹部はエッチングにより形成され、第2凹部はプレスにより形成されることを特徴とする請求項乃至10のいずれか一項記載の半導体装置。 The first recess is formed by etching, the semiconductor device of any one of claims 7 to 10 second recess is being formed by a press. 半導体素子を載置する載置面を有するダイパッドと、ダイパッド周囲に設けられたリード部とを有するリードフレームの製造方法において、
金属基板を準備する工程と、
金属基板の表裏に、それぞれエッチング用レジスト層を形成する工程と、
エッチング用レジスト層を耐腐蝕膜として金属基板の表裏にエッチングを施すことにより、ダイパッドおよびリード部を形成するとともに、ダイパッドの載置面に、深さが浅い第1凹部を形成する工程と、
第1凹部の中央に、プレスにより、第1凹部より深さが深い第2凹部を形成する工程とを備えたことを特徴とするリードフレームの製造方法。
In a lead frame manufacturing method having a die pad having a mounting surface on which a semiconductor element is mounted and a lead portion provided around the die pad
Preparing a metal substrate;
Forming a resist layer for etching on the front and back of the metal substrate,
Etching the front and back of the metal substrate with the etching resist layer as an anticorrosion film to form a die pad and a lead portion, and forming a first recess having a shallow depth on the mounting surface of the die pad;
And a step of forming a second recess having a depth deeper than that of the first recess by pressing at a center of the first recess.
半導体装置の製造方法において、
請求項12記載のリードフレームの製造方法によりリードフレームを製造する工程と、
リードフレームのダイパッドの載置凹部内に半導体素子を載置する工程と、
半導体素子とリード部とを導電部により接続する工程と、
半導体素子と導電部とを封止樹脂部により封止する工程とを備えたことを特徴とする半導体装置の製造方法。
In a method for manufacturing a semiconductor device,
Producing a lead frame by the lead frame producing method according to claim 12 ;
Placing the semiconductor element in the mounting recess of the die pad of the lead frame;
Connecting the semiconductor element and the lead portion by a conductive portion;
A method of manufacturing a semiconductor device, comprising: sealing a semiconductor element and a conductive portion with a sealing resin portion.
JP2010006035A 2010-01-14 2010-01-14 Lead frame and manufacturing method thereof, and semiconductor device and manufacturing method thereof Active JP5573176B2 (en)

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JP2011146524A5 true JP2011146524A5 (en) 2013-10-24
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