JP2011124368A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To facilitate repair or replacement of a semiconductor package, to lower the accuracy required for adjustment of the solder amount of a solder bump, and to improve the mounting reliability of a semiconductor device. <P>SOLUTION: The semiconductor device includes solder bumps 30 for electrically connecting the electrodes 11 of a semiconductor package 10 and the substrate electrodes 21 of a circuit board 20 with one another, and includes an insulating sheet 40 arranged between the semiconductor package 10 and the circuit board 20. On the insulating sheet 40, a plurality of through-holes 41, respectively corresponding to the plurality of electrodes 11 are formed through from the side of the semiconductor package 10 to the side of the circuit board 20. Each of the plurality of solder bumps 30 connects one corresponding electrode 11 and one corresponding substrate electrode 21 via one corresponding through-hole 41 and is also separated from the inner periphery of the one through-hole 41. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  When mounting a semiconductor package such as BGA (Ball Grid Array) on a circuit board such as a printed circuit board, each electrode (pad) of the printed circuit board and each electrode (pad) of the circuit board are electrically and mechanically connected. To do. This connection is performed by heating in a furnace of a reflow apparatus to melt a bump previously formed by solder on the electrode of the semiconductor package and then cooling and solidifying the bump. Thereafter, an underfill resin is injected between the semiconductor package and the circuit board, and the underfill resin is cured to complete the mounting of the semiconductor package on the circuit board.

  When it is necessary to remove the semiconductor package from the circuit board in order to repair or replace the semiconductor package after such mounting, it is necessary to remelt the solder bumps and not peel the semiconductor package from the circuit board. However, the underfill resin has high adhesion and is difficult to remove.

Patent Document 1 describes a technique for joining a BGA and a printed board via an insulating sheet instead of an underfill resin. A plurality of pads are formed in a matrix arrangement on one side of the BGA, and solder bumps are provided on these pads. Also, a plurality of pads are formed on one side of the printed circuit board in an arrangement corresponding to the BGA pads, and a plurality of cylindrical or barrel-shaped through holes are formed in the insulating sheet in an arrangement corresponding to the BGA pads. ing.
In the technique of Patent Document 1, in order to connect the BGA to the printed circuit board, first, flux is applied to each pad of the printed circuit board, and then the through holes of the insulating sheet are connected to the BGA solder bumps and the printed circuit board pads. An insulating sheet is sandwiched between the BGA and the printed circuit board so as to overlap at the same position. Next, the BGA and the printed circuit board are heated with a reflow apparatus. By this heating, each solder bump is melted and each fits in the shape of the through hole, and wet spreads on the pad of the printed circuit board.Each pad of the BGA and each pad of the printed circuit board are electrically and via the solder. Mechanically connected. In addition, each solder is mutually insulated by the insulating sheet with the solder located adjacent.

JP 2001-223463 A

In the structure of Patent Document 1, since the solder is in close contact with the entire inner periphery of the through hole of the insulating sheet, the adhesion between the insulating sheet and the solder is strong. For this reason, it is difficult to remove the insulating sheet from the BGA and to remove the solder from the through hole of the insulating sheet. When repairing or exchanging the BGA, it is necessary to remove the insulating sheet from the BGA or to remove the solder from the through hole of the insulating sheet. Have difficulty.
In addition, as in Patent Document 1, in order to fit the solder into the through hole according to the shape of the through hole, it is necessary to adjust the solder amount of the solder bump with high accuracy. For this reason, when the amount of solder is insufficient, the solder bumps do not reach the electrode of the circuit board, and the electrical connection between the BGA electrode and the circuit board electrode may be poor. Moreover, when there is too much solder amount, the electrodes which adjoin the circuit board may short-circuit, for example with the solder which protruded from the through hole. Therefore, the mounting reliability of the semiconductor device is not sufficient.

  As described above, it has been difficult to easily repair or replace a semiconductor package such as a BGA, and to reduce the accuracy required for adjusting the solder amount of the solder bumps and increase the mounting reliability of the semiconductor device.

The present invention provides a semiconductor package having a plurality of electrodes on one side;
A circuit board having a plurality of substrate electrodes disposed on one surface corresponding to each of the plurality of electrodes;
A plurality of solder bumps corresponding to each of the plurality of electrodes;
An insulating sheet disposed between the semiconductor package and the circuit board, wherein a plurality of through holes disposed corresponding to the plurality of electrodes are formed so as to penetrate from the semiconductor package side to the circuit board side When,
Have
Each of the plurality of solder bumps connects the corresponding one electrode and the corresponding one substrate electrode through the corresponding one through hole, and the inside of the one through hole. Provided is a semiconductor device which is separated from the periphery.

According to this semiconductor device, since the plurality of solder bumps are separated from the inner periphery of the corresponding through holes, the insulating sheet can be easily removed from the semiconductor package when the semiconductor package is repaired or replaced. The solder can be easily removed from the through hole of the insulating sheet. Therefore, repair or replacement of the semiconductor package becomes easy.
Moreover, since the adjustment accuracy of the solder amount may be low, it is difficult for the solder amount to be insufficient, and as a result, the possibility that the electrical connection between the electrode of the semiconductor package and the substrate electrode of the circuit board becomes poor is reduced. Can do. Moreover, since the adjustment accuracy of the solder amount may be low, it is difficult for the solder amount to be excessive, and as a result, the possibility that the adjacent substrate electrodes or adjacent electrodes are short-circuited can be reduced. Therefore, the mounting reliability of the semiconductor device can be improved.
As described above, the repair or replacement of the semiconductor package can be facilitated, and the accuracy required for adjusting the solder amount of the solder bumps can be lowered to increase the mounting reliability of the semiconductor device.

The present invention also includes a plurality of electrodes provided on one surface of the semiconductor package, and a plurality of substrate electrodes disposed on one surface of the circuit board corresponding to each of the plurality of electrodes. Forming a solder bump on each of the above,
An insulating sheet in which a plurality of through holes arranged corresponding to each of the plurality of electrodes penetrates from the semiconductor package side to the circuit board side is sandwiched between the semiconductor package and the circuit board. A step of allowing each of the formed plurality of solder bumps to enter a corresponding one through hole;
The plurality of electrodes and the substrate electrodes corresponding to the plurality of electrodes, respectively, so that the plurality of solder bumps are heated and melted so that each of the plurality of solder bumps is separated from the inner periphery of the corresponding through hole. And connecting the corresponding solder bumps among the plurality of solder bumps,
A method for manufacturing a semiconductor device is provided.

  According to the present invention, it is possible to easily repair or replace a semiconductor package, and to reduce the accuracy required for adjusting the solder amount of the solder bumps and to increase the mounting reliability of the semiconductor device.

It is a typical sectional view showing the composition of the semiconductor device concerning an embodiment. It is a figure which shows the structure of the insulating sheet which the semiconductor device which concerns on embodiment has. It is a figure for demonstrating the advantage according to the shape of the through-hole of an insulating sheet. It is a series of process diagrams for explaining a manufacturing method of a semiconductor device according to an embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

  FIG. 1 is a schematic cross-sectional view showing a configuration of a semiconductor device 100 according to the embodiment. 2A and 2B are diagrams illustrating the configuration of the insulating sheet 40 included in the semiconductor device 100, in which FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along line AA in FIG.

The semiconductor device 100 according to the present embodiment includes a semiconductor package 10 having a plurality of electrodes on one surface, and a circuit board 20 having a plurality of substrate electrodes 21 arranged corresponding to each of the plurality of electrodes 11 on one surface. And a plurality of solder bumps 30 corresponding to each of the plurality of electrodes 11. Further, a plurality of through holes 41 disposed between the semiconductor package 10 and the circuit board 20 and corresponding to the plurality of electrodes 11 are formed to penetrate from the semiconductor package 10 side to the circuit board 20 side. The insulating sheet 40 is provided. Each of the plurality of solder bumps 30 connects the corresponding one electrode 11 and the corresponding one substrate electrode 21 via the corresponding one through hole 41, and the inside of the one through hole 41 Separated from the circumference.
This will be described in detail below.

The semiconductor package 10 is, for example, a BGA (Ball Grid Array) type package or a flip chip type package. A plurality of electrodes 11 are provided on one surface of the semiconductor package 10 in, for example, a matrix arrangement. These electrodes 11 are, for example, electrode pads, and are connected to lower layer wirings.
Similarly, a plurality of substrate electrodes 21 are provided on one surface of the circuit board 20 in, for example, a matrix arrangement. The substrate electrode 21 is, for example, a land, and is connected to the lower layer wiring.
The electrodes 11 and the substrate electrodes 21 correspond one-to-one, and each electrode 11 and the corresponding substrate electrode 21 face each other.
Each electrode 11 is electrically connected to a corresponding substrate electrode 21 via a corresponding solder bump 30.

  The insulating sheet 40 is interposed between the semiconductor package 10 and the circuit board 20. The insulating sheet 40 is in the form of a sheet or film made of an insulating polymer material such as a transparent or translucent thermosetting epoxy resin. The outer dimension of the insulating sheet 40 is substantially equal to the outer dimension of the semiconductor package 10. The thickness of the insulating sheet 40 is equal to the height of the solder bump 30 or slightly thinner than the height of the solder bump 30.

The insulating sheet 40 is provided with a plurality of through holes 41 in a matrix arrangement, for example, and the through holes 41 correspond to the electrodes 11 on a one-to-one basis. Therefore, the through hole 41 corresponds to the substrate electrode 21 on a one-to-one basis.
A corresponding solder bump 30 is disposed in each through hole 41.

Here, as shown in FIG. 1, the outer diameter (outer dimension) of each solder bump 30 is set to be smaller than the inner diameter (inner dimension) of the through hole 41, and each solder bump 30 corresponds to the corresponding through hole 41. It is separated from the inner periphery (not in contact with the inner periphery). In other words, a clearance exists between each solder bump 30 and the inner periphery of the corresponding through hole 41. Specifically, for example, the ratio a / b between the outer diameter a of the solder bump 30 and the inner diameter b of the through hole 41 is preferably 0.9 or less. This ratio a / b is preferably 0.7 or less as required.
As described above, since the solder bump 30 is separated from the inner periphery of the through hole 41, the semiconductor package 10 and the circuit board 20 can be easily detached, and the semiconductor package 10 can be easily repaired or replaced.

In the case of the present embodiment, the through hole 41 can be, for example, a rectangular tube shape as shown in FIG. 2, and in this case, the planar shape of the through hole 41 is a quadrangle (specifically, for example, a square). is there.
The through hole 41 may have other shapes such as a cylindrical shape.

There are advantages in the case where the through-hole 41 is formed in a rectangular tube shape and in the case where the through hole 41 is formed in a cylindrical shape.
FIG. 3 is a diagram for explaining advantages according to the shape of the through hole 41 of the insulating sheet 40. 3A is a plan sectional view showing the positional relationship between the through hole 41 and the solder bump 30 when the through hole 41 has a rectangular tube shape. Similarly, FIG. 3B is a plan sectional view showing the positional relationship between the through hole 41 and the solder bump 30 when the through hole 41 is cylindrical.
As shown in FIGS. 3 (a) and 3 (b), if the through hole 41 has a rectangular tube shape and a cylindrical shape, and the interval c between the adjacent through holes 41 is equal to each other, the solder bump 30 and The maximum distance d with respect to the inner periphery of the through hole 41 is larger when the through hole 41 has a rectangular tube shape. For this reason, when the through hole 41 has a rectangular tube shape, it becomes easier to ensure the clearance between the solder bump 30 and the inner periphery of the through hole 41. Furthermore, when the through hole 41 is a square cylinder, the bonding area between the insulating sheet 40 and the semiconductor package 10 can be reduced, so that the semiconductor package 10 can be easily detached from the insulating sheet 40. In addition, when the through hole 41 is a square cylinder, the insulating sheet 40 requires less material, so the cost of the insulating sheet 40 is reduced.
On the other hand, the area of the insulating sheet 40 other than the through-hole 41 has a through-hole if the through-hole 41 has a rectangular tube shape and a cylindrical shape, and the interval c between the adjacent through-holes 41 is equal to each other. The case where the hole 41 is cylindrical is larger. For this reason, the direction where the through-hole 41 is cylindrical can ensure the intensity | strength of the insulating sheet 40 large.

Further, as shown in FIG. 1, each electrode 11 enters, for example, a corresponding through hole 41. For this reason, the outer periphery of each electrode 11 is located inside the corresponding through hole 41 in plan view. Moreover, each electrode 11 is separated from the inner periphery of the corresponding through hole 41, for example.
The dimension of the electrode 11 can be made substantially equal to the outer diameter of the solder bump 30, for example.

Similarly, each substrate electrode 21 enters, for example, the corresponding through hole 41. For this reason, the outer periphery of each substrate electrode 21 is located inside the corresponding through hole 41 in plan view. Moreover, each substrate electrode 21 is separated from the inner periphery of the corresponding through hole 41, for example.
The dimension of the substrate electrode 21 can be made substantially equal to the outer diameter of the solder bump 30, for example.

  In the semiconductor package 10, the wiring (not shown) connected to the electrode 11 is, for example, a lower layer wiring so as not to straddle the boundary portion between the adjacent through holes 41 on the surface of the semiconductor package 10. It has become. Similarly, in the circuit board 20, the wiring (not shown) connected to the substrate electrode 21 is, for example, a lower layer wiring and does not straddle the boundary portion between the adjacent through holes 41 on the surface of the semiconductor package 10. It is like that.

  Next, a method for manufacturing the semiconductor device according to the present embodiment will be described. FIG. 4 is a series of process diagrams for explaining the manufacturing method.

The method for manufacturing a semiconductor device according to the present embodiment includes a plurality of electrodes 11 provided on one surface of the semiconductor package 10 and a corresponding one of the plurality of electrodes 11 provided on one surface of the circuit board 20. And forming a solder bump 30 on each of the plurality of substrate electrodes 21. Further, an insulating sheet 40 in which a plurality of through holes 41 arranged corresponding to each of the plurality of electrodes 11 is formed so as to penetrate from the semiconductor package 10 side to the circuit board 20 side is replaced with the semiconductor package 10 and the circuit board 20. And a step of inserting each of the plurality of solder bumps 30 into the corresponding one through hole 41. Further, the plurality of solder bumps 30 are heated and melted so that the plurality of solder bumps 30 are separated from the inner periphery of the corresponding through holes 41, respectively, and the plurality of electrodes 11 and the substrate corresponding to each of the plurality of electrodes 11. There is a step of connecting the electrode 21 via a corresponding one solder bump 30 among the plurality of solder bumps 30.
This will be described in detail below.

As shown in FIG. 4A, the solder bump 30 is provided in advance on each electrode 11, for example.
Next, flux (not shown) is applied to each substrate electrode 21, for example.
Next, the surface of the semiconductor package 10 on which the electrode 11 is provided and the surface of the circuit board 20 on which the substrate electrode 21 is provided are opposed to each other with the insulating sheet 40 interposed therebetween. Then, the semiconductor package 10, the insulating sheet 40, and the circuit board 20 are aligned so that each electrode 11 faces the substrate electrode 21 with the corresponding through hole 41 interposed therebetween.

Next, as illustrated in FIG. 4B, the insulating sheet 40 is sandwiched between the semiconductor package 10 and the circuit board 20. At this time, the solder bumps 30 and the electrodes 11 are inserted into the corresponding through holes 41, while the substrate electrodes 21 are inserted into the corresponding through holes 41.
Here, for example, an adhesive (not shown) is applied to the front and back surfaces of the insulating sheet 40 in advance, or an adhesive sheet (not shown) is pasted, whereby the insulating sheet 40 is attached. The semiconductor package 10 and the circuit board 20 may be bonded.

  4A to 4B, after the insulating sheet 40 is positioned and mounted on the surface of the circuit board 20 on which the substrate electrode 21 is provided, the semiconductor package 10 is mounted on the circuit. You may align with respect to the board | substrate 20 and the insulating sheet 40. FIG. Alternatively, after the insulating sheet 40 is positioned and mounted on the surface of the semiconductor package 10 on which the electrodes 11 and the solder bumps 30 are provided, the semiconductor package 10 and the insulating sheet 40 are aligned with the circuit board 20. May be. By these, alignment can be performed easily.

Next, as shown in FIG. 4C, the solder bump 30 is melted by heating, and each electrode 11 is connected to the corresponding substrate electrode 21 via the solder bump 30. The heating is performed using IR (Infrared Radiation) or a reflow apparatus using hot air heated by a heater. At this time, the front and back surfaces of the insulating sheet 40 may be slightly melted, and the insulating sheet 40 may be bonded to the semiconductor package 10 and the circuit board 20 respectively.
Thereby, the mounting of the semiconductor package 10 and the circuit board 20 is completed, and the semiconductor device 100 is manufactured.

  Here, the molten solder bumps 30 are bonded to the semiconductor package 10 and the circuit board 20, but are not bonded to the insulating sheet 40. For this reason, when the semiconductor package 10 is repaired or replaced, it is not necessary to heat the entire semiconductor device 100. For example, only one of the semiconductor package 10 and the circuit board 20 is heated to melt the solder bump 30 and the insulating sheet 40, or the solder bump 30 and an adhesive (not shown) or an adhesive sheet (not shown). ) Can be easily separated from the semiconductor package 10 and the circuit board 20. Therefore, repair or replacement of the semiconductor package 10 is facilitated.

  Furthermore, since the adjustment accuracy of the solder amount of the solder bump 30 may be low, the solder amount is hardly insufficient, and as a result, the possibility that the electrical connection between the electrode 11 and the substrate electrode 21 becomes poor is reduced. Can do. Further, since the adjustment accuracy of the solder amount of the solder bump 30 may be low, it is difficult for the solder amount of the solder bump 30 to be excessive, and as a result, the possibility that the adjacent substrate electrodes 21 are short-circuited, and The possibility that the adjacent electrodes 11 are short-circuited can also be reduced. Therefore, the mounting reliability of the semiconductor device 100 is improved.

  According to the embodiment as described above, each solder bump 30 is separated from the inner periphery of the corresponding through hole 41, so that repair or replacement of the semiconductor package 10 can be facilitated, and the solder bump 30. Therefore, the accuracy required for adjusting the amount of solder can be reduced, and the mounting reliability of the semiconductor device 100 can be increased.

Further, since each electrode 11 enters the corresponding through hole 41 and is separated from the inner periphery of the corresponding through hole 41, the solder bump 30 can be bonded even if the solder bump 30 is joined to the entire surface of the electrode 11. And a clearance between the inner periphery of the through hole 41 can be secured.
Similarly, since each substrate electrode 21 enters the corresponding through hole 41 and is separated from the inner periphery of the corresponding through hole 41, even if the solder bump 30 is bonded to the entire surface of the substrate electrode 21, A clearance between the solder bump 30 and the inner periphery of the through hole 41 can be ensured.

  Further, since the ratio a / b between the outer diameter a of the solder bump 30 and the inner diameter b of the through hole 41 is 0.9 or less, the solder bump 30 and the through hole can be penetrated even if the solder bump 30 has a low amount of adjustment accuracy. A clearance with the inner periphery of the hole 41 can be ensured.

  In addition, since the through hole 41 has a rectangular cylindrical shape, for example, the maximum distance d between the solder bump 30 and the inner periphery of the through hole 41 can be secured larger than in the case where the through hole 41 is cylindrical.

DESCRIPTION OF SYMBOLS 10 Semiconductor package 11 Electrode 20 Circuit board 21 Board electrode 30 Bump 40 Insulation sheet 41 Through hole 100 Semiconductor device a Solder bump outer diameter b Through hole inner diameter c Interval d Maximum distance

Claims (6)

A semiconductor package having a plurality of electrodes on one side;
A circuit board having a plurality of substrate electrodes disposed on one surface corresponding to each of the plurality of electrodes;
A plurality of solder bumps corresponding to each of the plurality of electrodes;
An insulating sheet disposed between the semiconductor package and the circuit board, wherein a plurality of through holes disposed corresponding to the plurality of electrodes are formed so as to penetrate from the semiconductor package side to the circuit board side When,
Have
Each of the plurality of solder bumps connects the corresponding one electrode and the corresponding one substrate electrode through the corresponding one through hole, and the inside of the one through hole. A semiconductor device characterized in that the semiconductor device is separated from the circumference.   2. The semiconductor device according to claim 1, wherein an outer periphery of each of the electrodes is located inside the corresponding through hole in a plan view and is separated from an inner periphery of the corresponding through hole. .   The outer periphery of each said board | substrate electrode is located inside the said corresponding through hole in planar view, and is spaced apart from the inner periphery of the corresponding said through hole. Semiconductor device.   4. The semiconductor device according to claim 1, wherein a ratio a / b between an outer diameter “a” of the solder bump and an inner diameter “b” of the through hole is 0.9 or less. 5.   5. The semiconductor device according to claim 1, wherein the through hole has a rectangular cylindrical shape. A plurality of electrodes provided on one surface of the semiconductor package and a plurality of substrate electrodes disposed on one surface of the circuit board corresponding to the plurality of electrodes, respectively, and solder Forming a bump;
An insulating sheet in which a plurality of through holes arranged corresponding to each of the plurality of electrodes penetrates from the semiconductor package side to the circuit board side is sandwiched between the semiconductor package and the circuit board. A step of allowing each of the formed plurality of solder bumps to enter a corresponding one through hole;
The plurality of electrodes and the substrate electrodes corresponding to the plurality of electrodes, respectively, so that the plurality of solder bumps are heated and melted so that each of the plurality of solder bumps is separated from the inner periphery of the corresponding through hole. And connecting the corresponding solder bumps among the plurality of solder bumps,
A method for manufacturing a semiconductor device, comprising:

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