JP2011119563A - Wire bonding method and semiconductor device - Google Patents

Wire bonding method and semiconductor device Download PDF

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JP2011119563A
JP2011119563A JP2009277253A JP2009277253A JP2011119563A JP 2011119563 A JP2011119563 A JP 2011119563A JP 2009277253 A JP2009277253 A JP 2009277253A JP 2009277253 A JP2009277253 A JP 2009277253A JP 2011119563 A JP2011119563 A JP 2011119563A
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wire
bonding
pad
roughening
roughened
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JP5310515B2 (en
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Makoto Araki
誠 荒木
Hiroyoshi Kunieda
大佳 國枝
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Denso Corp
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Denso Corp
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  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wire bonding method which can appropriately connect a wire to a pad to be connected at low energy. <P>SOLUTION: After a process of forming a ball, a roughening process of roughening a portion of the surface of a drawer portion 40a pressed by a roughening member 200 by pressing the ball like drawer portion 40a drawn from the leading end of a tool 100 onto the roughening member 200 whose surface is roughened and plastically deforming the drawer portion 40a in such a manner that the drawer portion 40a is crushed from a portion pressed by the roughening member 200 is performed. Then, a bonding process is performed by pressing a roughened portion of the surface of the drawer portion 40a onto a pad 21 to be connected. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、ワイヤを被接合用パッドに接合するワイヤボンディング方法、および、ワイヤボンディングによってワイヤが接合される被接合用パッドを有する半導体装置に関する。   The present invention relates to a wire bonding method for bonding a wire to a bonding pad, and a semiconductor device having a bonding pad to which a wire is bonded by wire bonding.

従来より、金やＣｕなどよりなるワイヤを被接合用パッドにボンディングする場合、一般的なワイヤボンディング装置が用いられる。一般的なワイヤボンディング装置においては、ワイヤボンディング用のツールは、その先端部からワイヤが引き出されるようになっており、ワイヤの引き出しおよび引き回しを行えるようになっている。   Conventionally, when bonding a wire made of gold, Cu or the like to a bonding pad, a general wire bonding apparatus is used. In a general wire bonding apparatus, a wire bonding tool is configured such that a wire is pulled out from a tip portion thereof, and the wire can be pulled out and routed.

そして、このツールの先端部から引き出されたワイヤの引き出し部を、放電などにより溶融させてボール形状とする。その後、ツールによって、被接合用パッドにボール形状の引き出し部を押し当て、当該引き出し部に超音波を印加することにより、当該パッドに引き出し部を接合する。これが１次ボンディングである。   Then, the wire drawing portion drawn from the tip portion of the tool is melted by discharge or the like to form a ball shape. Thereafter, the ball-shaped lead portion is pressed against the bonding pad by a tool, and ultrasonic waves are applied to the lead portion, thereby joining the lead portion to the pad. This is primary bonding.

こうして、被接合用パッドにワイヤを接合した後、別のパッドまでワイヤを引き回し、当該別のパッドにワイヤを押し付けて超音波を印加し、ワイヤを接合する。これが２次ボンディングである。こうして、２個のパッド間がワイヤにより結線される。   Thus, after bonding a wire to a pad to be bonded, the wire is routed to another pad, the wire is pressed against the other pad, ultrasonic waves are applied, and the wire is bonded. This is secondary bonding. Thus, the two pads are connected by the wire.

ここで、このようなワイヤボンディング方法により、半導体装置の一面に設けられた被接合用パッドに対して１次ボンディングを行う場合に、ワイヤの引き出し部を被接合用パッドに押し当てたときの荷重によって、当該パッドや半導体装置がクラックなどのダメージを受けるという問題がある。   Here, when primary bonding is performed on the bonding pads provided on one surface of the semiconductor device by such a wire bonding method, the load when the lead portion of the wire is pressed against the bonding pads. Therefore, there is a problem that the pad or the semiconductor device is damaged such as a crack.

この問題は、たとえば半導体装置が、セル（素子）上に被接合用パッドを有する半導体チップや、民生品の超大規模集積回路などで使用されているＬｏｗ−ｋ層（低誘電率の層間絶縁膜材料）上に被接合用パッドが配置された半導体チップや、大容量メモリパッケージ等で用いられてきているオーバーハング構造を有する積層薄型チップ（たとえば厚みが５０μｍ以下）などである場合に顕著となる。   This problem is caused by, for example, a low-k layer (low dielectric constant interlayer insulating film) in which a semiconductor device is used in a semiconductor chip having a bonding pad on a cell (element), a consumer ultra-large scale integrated circuit, or the like. This is conspicuous in the case of a semiconductor chip having a bonding pad disposed on the material) or a laminated thin chip having an overhang structure (for example, a thickness of 50 μm or less) that has been used in a large-capacity memory package or the like. .

このような半導体装置のダメージを低減する方法として、従来では、被接合用パッドの表面を溝形状にして、低エネルギーでも十分な接合強度を得られるとする方法（特許文献１参照）や、被接合用パッドの下にダメージを低減する層を形成する方法（特許文献２参照）が提案されている。また、Ｃｕワイヤなどの硬いワイヤをボンディングする際のダメージに注力し、ワイヤを予め扁平体に変形させてボンディング部分の損傷を防止するという手法（特許文献３参照）が提案されている。   As a method for reducing the damage of such a semiconductor device, conventionally, the surface of the pad to be bonded is formed into a groove shape, and sufficient bonding strength can be obtained even with low energy (see Patent Document 1), A method of forming a layer for reducing damage under a bonding pad (see Patent Document 2) has been proposed. Further, a technique has been proposed (see Patent Document 3) that focuses on damage when bonding a hard wire such as a Cu wire, and prevents the bonding portion from being damaged by deforming the wire into a flat body in advance.

特開平０１−１３８７６４号公報Japanese Patent Laid-Open No. 01-138764 特開平０１−２５５２３４号公報JP-A-01-255234 特開平１０−１９９９１３号公報JP-A-10-199913

しかしながら、上記特許文献１および特許文献２の方法は、いずれも被接合用パッド側にて対策を行ったものであり、当該パッドの種類によっては制約が生じたり、またパッド形成の工程数が増加することでコストが増加したりする等の問題がある。   However, both of the methods of Patent Document 1 and Patent Document 2 take measures on the bonded pad side, and there are restrictions depending on the type of the pad, and the number of pad forming steps increases. There is a problem such as an increase in cost.

また、上記特許文献３の方法は、ワイヤボンディング方法による対策であるが、通常のＡｕワイヤも含めて扁平体にするのみでは、ワイヤをパッドに接触させて超音波を印加するときに、パッド表面上をワイヤが横滑りしやすく、この横滑りによって超音波エネルギーの伝達効率が低下する。そのため、必要以上に大きな超音波エネルギーを印加しなければならなくなり、パッド等のダメージが同様に発生することが懸念される。   Moreover, although the method of the said patent document 3 is a countermeasure by a wire bonding method, when only making it a flat body also including a normal Au wire, when making a wire contact a pad and applying an ultrasonic wave, a pad surface The wire tends to slip sideways, and this side slip reduces the transmission efficiency of ultrasonic energy. Therefore, it is necessary to apply ultrasonic energy that is larger than necessary, and there is a concern that damage to the pad or the like may occur in the same manner.

本発明は、上記問題に鑑みてなされたものであり、低エネルギーで適切にワイヤを被接合用パッドに接合できるワイヤボンディング方法、および、そのようなワイヤボンディング方法によってワイヤを接合するのに適した半導体装置を提供することを目的とする。   The present invention has been made in view of the above problems, and is suitable for bonding a wire by a wire bonding method capable of appropriately bonding a wire to a bonded pad with low energy and such a wire bonding method. An object is to provide a semiconductor device.

上記目的を達成するため、請求項１に記載の発明においては、ボール形成工程の後、ツール（１００）の先端部から引き出されているボール形状の引き出し部（４０ａ）を、表面が粗化された粗化部材（２００）に押し付けて、当該引き出し部（４０ａ）が粗化部材（２００）に押し付けられた部位から潰れるように塑性変形させることにより、引き出し部（４０ａ）の表面のうち粗化部材（２００）に押し付けられた部位を粗化する粗化工程を行い、その後、引き出し部（４０ａ）の表面のうち粗化された部位を、被接合用パッド（２１）に押し当ててボンディング工程を行うことを特徴とする。   In order to achieve the above object, in the first aspect of the present invention, after the ball forming step, the surface of the ball-shaped lead portion (40a) drawn from the tip portion of the tool (100) is roughened. The roughened member (200) is pressed against the roughened member (200) and plastically deformed so that the drawn portion (40a) is crushed from the portion pressed against the roughened member (200), thereby roughening the surface of the drawn portion (40a). A roughening step of roughening the portion pressed against the member (200) is performed, and then the roughened portion of the surface of the lead-out portion (40a) is pressed against the bonding target pad (21) to perform the bonding step. It is characterized by performing.

それによれば、ボール形状の引き出し部（４０ａ）を粗化部材（２００）に荷重を加えて潰すように塑性変形させ、その表面を粗化することにより、引き出し部（４０ａ）における被接合用パッド（２１）との接合部の表面積が増加するとともに、当該接合部の表面には、引き出し部（４０ａ）の内部の部位が外部に生まれ出てなる新生面が適切に形成される。そして、引き出し部（４０ａ）における当該接合部の表面が粗化されているため、ボンディング時におけるワイヤ（４０）の横滑りが抑制され、超音波エネルギーが効率よく消費される。   According to this, the ball-shaped lead portion (40a) is plastically deformed so as to be crushed by applying a load to the roughening member (200), and the surface thereof is roughened, whereby the pad to be joined in the lead portion (40a). As the surface area of the joint portion with (21) increases, a new surface is appropriately formed on the surface of the joint portion where a portion inside the lead-out portion (40a) is born outside. And since the surface of the said junction part in the drawer | drawing-out part (40a) is roughened, the side slip of the wire (40) at the time of bonding is suppressed, and ultrasonic energy is consumed efficiently.

よって、本発明のワイヤボンディング方法によれば、低エネルギーで適切にワイヤ（４０）を被接合用パッド（２１）に接合することができ、結果、被接合用パッド（２１）および当該パッド（２１）の下地へのダメージの軽減が図れる。   Therefore, according to the wire bonding method of the present invention, the wire (40) can be appropriately bonded to the bonding pad (21) with low energy. As a result, the bonding pad (21) and the pad (21) ) Can reduce damage to the groundwork.

ここで、請求項２に記載の発明のように、ワイヤ（４０）は金よりなり、被接合用パッド（２１）はアルミニウムよりなるものが好ましい。   Here, as in the invention described in claim 2, it is preferable that the wire (40) is made of gold and the bonding pad (21) is made of aluminum.

請求項３に記載の発明は、ワイヤボンディングによってワイヤ（４０）が接合される被接合用パッド（２１）を有し、被接合用パッド（２１）にワイヤ（４０）が接合されてなる半導体装置であって、表面がセラミックまたは樹脂よりなり且つ粗化された粗化部材（２００）が設けられていることを特徴とする。   The invention according to claim 3 includes a bonding pad (21) to which the wire (40) is bonded by wire bonding, and the wire (40) is bonded to the bonding pad (21). A roughening member (200) whose surface is made of ceramic or resin and is roughened is provided.

それによれば、ワイヤボンディングがなされる被接合用パッド（２１）が設けられている半導体装置自身に、粗化部材（２００）を設けているから、別途粗化部材を用意することなく、この粗化部材（２００）を用いて上記請求項１のワイヤボンディング方法が適切に行える。   According to this, since the roughening member (200) is provided in the semiconductor device itself provided with the bonding pads (21) to be wire-bonded, this roughening member is not prepared without preparing a roughening member separately. The wire bonding method according to claim 1 can be appropriately performed using the forming member (200).

よって、本発明によれば、低エネルギーで適切にワイヤ（４０）を被接合用パッド（２１）に接合できるワイヤボンディング方法によってワイヤ（４０）を接合するのに適した半導体装置を提供することができる。   Therefore, according to the present invention, it is possible to provide a semiconductor device suitable for bonding the wire (40) by the wire bonding method capable of bonding the wire (40) to the bonding pad (21) appropriately with low energy. it can.

この場合も、請求項４に記載の発明のように、ワイヤ（４０）は金よりなり、被接合用パッド（２１）はアルミニウムよりなるものが好ましい。   Also in this case, it is preferable that the wire (40) is made of gold and the bonded pad (21) is made of aluminum as in the invention described in claim 4.

なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

（ａ）は本発明の第１実施形態に係る半導体装置の概略断面図であり、（ｂ）は（ａ）中の半導体チップにおけるワイヤ接合部の拡大図である。(A) is a schematic sectional drawing of the semiconductor device which concerns on 1st Embodiment of this invention, (b) is an enlarged view of the wire junction part in the semiconductor chip in (a). 第１実施形態に係るワイヤボンディング方法におけるボール形成工程、粗化工程を示す工程図である。It is process drawing which shows the ball | bowl formation process and roughening process in the wire bonding method which concerns on 1st Embodiment. 図３に続くワイヤボンディング方法を示す工程図である。It is process drawing which shows the wire bonding method following FIG. 本発明の第２実施形態に係る半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係るワイヤボンディング方法におけるボール形成工程、粗化工程を示す工程図である。It is process drawing which shows the ball | bowl formation process and roughening process in the wire bonding method which concerns on 3rd Embodiment of this invention. 本発明の第４実施形態に係るワイヤボンディング方法におけるボール形成工程、粗化工程を示す工程図である。It is process drawing which shows the ball | bowl formation process and roughening process in the wire bonding method which concerns on 4th Embodiment of this invention. 本発明の第５実施形態に係るワイヤボンディング方法における粗化工程を示す工程図である。It is process drawing which shows the roughening process in the wire bonding method which concerns on 5th Embodiment of this invention.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１（ａ）は、本発明の第１実施形態に係る半導体装置Ｓ１の概略断面構成を示す図であり、図１（ｂ）は、（ａ）中の半導体チップ２０におけるワイヤ４０の接合部を拡大して示す図である。 (First embodiment)
FIG. 1A is a diagram showing a schematic cross-sectional configuration of the semiconductor device S1 according to the first embodiment of the present invention, and FIG. 1B is a joint portion of the wire 40 in the semiconductor chip 20 in FIG. It is a figure which expands and shows.

本実施形態の半導体装置Ｓ１は、大きくは、基板１０と、基板１０の一面上に搭載された被接合用パッドとしての１次ボンディングパッド２１を有する半導体チップ２０と、基板１０の一面上に設けられた２次ボンディングパッド３０と、半導体チップ２０と２次ボンディングパッド３０とを結線するワイヤ４０とを備えて構成されている。   The semiconductor device S1 of the present embodiment is roughly provided on a substrate 10, a semiconductor chip 20 having a primary bonding pad 21 as a bonding pad mounted on one surface of the substrate 10, and one surface of the substrate 10. The secondary bonding pad 30 and the wire 40 for connecting the semiconductor chip 20 and the secondary bonding pad 30 are provided.

本実施形態では、基板１０は、半導体チップ２０を搭載できるものであればよく、たとえばセラミック基板、樹脂基板、あるいはリードフレーム、ヒートシンクなどの金属基板が挙げられる。半導体チップ２０は、ここではシリコン半導体などよりなるＩＣチップであり、はんだや導電性接着剤などの図示しないダイマウント材を介して基板１０の一面に接合され固定されている。   In the present embodiment, the substrate 10 may be any substrate as long as the semiconductor chip 20 can be mounted. Examples thereof include a ceramic substrate, a resin substrate, or a metal substrate such as a lead frame and a heat sink. Here, the semiconductor chip 20 is an IC chip made of a silicon semiconductor or the like, and is bonded and fixed to one surface of the substrate 10 via a die mount material (not shown) such as solder or a conductive adhesive.

被接合用パッドとしての１次ボンディングパッド２１は、１次ボンディングされるパッドであり、ここでは、半導体チップ２０の表面に形成されたＡｌ（アルミニウム）よりなるパッドである。また、半導体チップ２０の内部には導電層などによるトランジスタなどの素子や当該素子を接続する内層配線等が形成されている。   The primary bonding pad 21 as a bonded pad is a pad to be primarily bonded, and here is a pad made of Al (aluminum) formed on the surface of the semiconductor chip 20. Further, inside the semiconductor chip 20, an element such as a transistor made of a conductive layer, an inner layer wiring for connecting the element, and the like are formed.

また、２次ボンディングパッド３０は、基板１０の一面において半導体チップ２０の近傍に配置されている。この２次ボンディングパッド３０は、一般的なもので、たとえばＷ（タングステン）、Ｃｕ（銅）メッキ、Ａｕ（金）メッキよりなる各層が順次積層されることにより形成されたものである。   The secondary bonding pad 30 is disposed in the vicinity of the semiconductor chip 20 on one surface of the substrate 10. The secondary bonding pad 30 is a general one, and is formed by sequentially laminating layers made of, for example, W (tungsten), Cu (copper) plating, and Au (gold) plating.

そして、１次ボンディングパッド２１と２次ボンディングパッド３０とが、ワイヤ４０を介して結線されており、このワイヤ４０を介して半導体チップ２０と基板１０とが電気的に接続されている。このワイヤ４０は、後述するボールボンディング法によるワイヤボンディングにより形成されたものであり、ＡｕやＣｕよりなる。   The primary bonding pad 21 and the secondary bonding pad 30 are connected through a wire 40, and the semiconductor chip 20 and the substrate 10 are electrically connected through the wire 40. The wire 40 is formed by wire bonding by a ball bonding method described later, and is made of Au or Cu.

なお、このワイヤ４０で結線された両パッド２１、３０は１組であってもよいが、本実施形態では、典型的なものと同様、両パッド２１、３０の複数の組が存在し、各組においてワイヤ４０による接続がなされている。   The pads 21 and 30 connected by the wire 40 may be one set. However, in this embodiment, a plurality of sets of the pads 21 and 30 exist as in a typical example, Connection by wire 40 is made in the set.

本実施形態の半導体装置Ｓ１は、基板１０の一面に、半導体チップ２０を搭載・固定した後、半導体チップ２０の１次ボンディングパッド２１と２次ボンディングパッド３０とを、ボールボンディング法によるワイヤボンディングによって結線することにより製造される。   In the semiconductor device S1 of this embodiment, after the semiconductor chip 20 is mounted and fixed on one surface of the substrate 10, the primary bonding pad 21 and the secondary bonding pad 30 of the semiconductor chip 20 are bonded by wire bonding using a ball bonding method. Manufactured by connecting.

ここで、上述したように、半導体チップ２０の内部には導電層などによるトランジスタなどの素子や当該素子を接続する内層配線等が形成されており、これらを下地として、半導体チップ２０の表面に１次ボンディングパッド２１が形成されている。   Here, as described above, an element such as a transistor made of a conductive layer or the like, an inner layer wiring for connecting the element, and the like are formed inside the semiconductor chip 20. Next, a bonding pad 21 is formed.

そのため、１次ボンディングパッド２１へのワイヤ４０の接続においては、当該ワイヤ４０に加える荷重を小さくして、当該パッド２１およびその下地へのダメージを極力回避することが必要となる。本実施形態のワイヤボンディング方法は、このような点を考慮して工夫されたものである。   Therefore, in connecting the wire 40 to the primary bonding pad 21, it is necessary to reduce the load applied to the wire 40 and avoid damage to the pad 21 and its base as much as possible. The wire bonding method of the present embodiment has been devised in consideration of such points.

次に、本実施形態のワイヤ４０の形成方法すなわちワイヤボンディング方法について、図２、図３を参照して述べる。図２は、本ワイヤボンディング方法におけるボール形成工程、粗化工程を示す工程図であり、図３は、図２に続く工程図であり、当該粗化工程以降の工程を示している。   Next, a method for forming the wire 40 of this embodiment, that is, a wire bonding method will be described with reference to FIGS. FIG. 2 is a process diagram showing a ball forming process and a roughening process in the present wire bonding method, and FIG. 3 is a process chart following FIG. 2, showing the processes after the roughening process.

ここでは、被接合用パッドである半導体チップ２０の１次ボンディングパッド２１を、ボールボンディングが行われる１次ボンディング側とし、２次ボンディングパッド３０をウェッジボンディングが行われる２次ボンディング側として、これら両ボンディングパッド２１、３０がワイヤボンディングされる。   Here, the primary bonding pad 21 of the semiconductor chip 20 which is a bonded pad is set as the primary bonding side where ball bonding is performed, and the secondary bonding pad 30 is set as the secondary bonding side where wedge bonding is performed. The bonding pads 21 and 30 are wire bonded.

なお、本実施形態におけるワイヤボンディング装置は、この種の一般的なワイヤボンディングを行うことのできる装置であり、超音波などにより振動する図示しないホーンに対して図２、図３に示されるツール１００を取り付けたものである。   The wire bonding apparatus in the present embodiment is an apparatus capable of performing this kind of general wire bonding, and the tool 100 shown in FIGS. 2 and 3 with respect to a horn (not shown) that vibrates by ultrasonic waves or the like. Is attached.

そして、このツール１００は当該ホーンによって移動・振動させられる。また、ツール１００は、内部から先端部１０２まで貫通し先端部１０２に開口する内孔１０１を有しており、その内孔１０１にワイヤ４０を挿入して当該ワイヤ４０を保持するとともに、ツール１００の先端部１０２にワイヤ４０を引き出すものである。   The tool 100 is moved and vibrated by the horn. The tool 100 has an inner hole 101 that penetrates from the inside to the distal end portion 102 and opens to the distal end portion 102. The wire 100 is inserted into the inner hole 101 to hold the wire 40, and the tool 100. The wire 40 is pulled out to the tip portion 102 of the wire.

まず、図２（ａ）に示されるように、ツール１００の内孔１０１に挿入されたワイヤ４０において、ツール１００の先端部１０２から引き出されたワイヤ４０の引き出し部４０ａを、たとえば水素トーチの火炎や放電スパークなどによって溶融させ、当該引き出し部４０ａをボール形状とする。これがボール形成工程である。   First, as shown in FIG. 2 (a), in the wire 40 inserted into the inner hole 101 of the tool 100, the lead portion 40a of the wire 40 drawn from the tip portion 102 of the tool 100 is used as a flame of a hydrogen torch, for example. Then, the lead-out portion 40a is melted by a discharge spark or the like to form a ball shape. This is the ball forming process.

このボール形成工程の後、図２（ｂ）、（ｃ）に示される粗化工程を行う。この粗化工程では、まず図２（ｂ）に示されるように、ボール形状の引き出し部４０ａを、表面が粗化された粗化部材２００に押し付けて、当該引き出し部４０ａが粗化部材２００に押し付けられた部位から潰れるように、当該引き出し部４０ａを塑性変形させる。   After this ball formation step, a roughening step shown in FIGS. 2B and 2C is performed. In this roughening step, first, as shown in FIG. 2B, the ball-shaped lead portion 40 a is pressed against the roughening member 200 whose surface is roughened, and the lead portion 40 a is pressed against the roughening member 200. The drawer portion 40a is plastically deformed so as to be crushed from the pressed portion.

その後、図２（ｃ）に示されるように、粗化部材２００からワイヤ４０の引き出し部４０ａを引き離す。それにより、引き出し部４０ａの表面のうち粗化部材２００に押し付けられた部位が粗化される。   Thereafter, as illustrated in FIG. 2C, the lead portion 40 a of the wire 40 is pulled away from the roughening member 200. Thereby, the site | part pressed on the roughening member 200 among the surfaces of the drawer | drawing-out part 40a is roughened.

この粗化部材２００は、本実施形態のワイヤボンディング装置の適所に設けられるものである。具体的には、セラミックや樹脂よりなる部材であり、その表面が粗化されたものである。ここで、限定するものではないが、セラミックとしてはたとえばアルミナなどが挙げられ、樹脂としては、ポリテトラフルオロエチレンなどのフッ素樹脂などが挙げられる。   The roughening member 200 is provided at an appropriate position of the wire bonding apparatus of the present embodiment. Specifically, it is a member made of ceramic or resin, and its surface is roughened. Here, although not limited, the ceramic includes, for example, alumina, and the resin includes a fluororesin such as polytetrafluoroethylene.

つまり、粗化部材２００は、ワイヤ４０よりも硬く、金や銅などのボールボンディング用のワイヤ４０を押しつけたときに、当該ワイヤ４０との密着性が小さいセラミックや樹脂によって表面が形成されたものが好ましい。また、粗化部材２００としては、表面がセラミックまたは樹脂よりなり、粗化されたものであればよく、たとえば中身が金属などであって、粗化されたセラミックまたは樹脂の膜が当該金属表面にコーティングされたものであってもよい。   That is, the roughening member 200 is harder than the wire 40 and has a surface formed of ceramic or resin having a low adhesion to the wire 40 when the wire 40 for ball bonding such as gold or copper is pressed. Is preferred. The roughening member 200 may be any surface that is made of ceramic or resin and roughened. For example, the content is metal or the like, and a roughened ceramic or resin film is formed on the metal surface. It may be coated.

また、粗化部材２００の表面を粗化する方法としては、たとえばセラミックの場合には、焼結の度合を制御することでセラミックの粒子形状を表面にむき出しとする方法が挙げられる。それ以外にも、セラミックおよび樹脂の両方の場合については、サンドブラスト、研磨あるいはエッチング等による粗化が挙げられる。   Moreover, as a method of roughening the surface of the roughening member 200, for example, in the case of ceramic, there is a method of exposing the particle shape of the ceramic to the surface by controlling the degree of sintering. In addition, for both ceramic and resin, roughening by sandblasting, polishing, etching or the like can be mentioned.

ここでは、図２に示されるように、粗化部材２００においてワイヤ４０の引き出し部４０ａが押し付けられる表面は、平坦面であり、この平坦な表面が粗化されたものである。それゆえ、引き出し部４０ａのうち粗化された表面は、ボールの一部が潰れた面として構成されている。   Here, as shown in FIG. 2, the surface of the roughening member 200 against which the lead portion 40 a of the wire 40 is pressed is a flat surface, and the flat surface is roughened. Therefore, the roughened surface of the drawer portion 40a is configured as a surface in which a part of the ball is crushed.

こうして粗化工程を行った後、図３（ａ）に示されるように、引き出し部４０ａの表面のうち粗化された部位を、被接合用パッドとしての１次ボンディングパッド２１に押し当ててボンディング工程を行う。   After the roughening step is performed in this manner, as shown in FIG. 3A, the roughened portion of the surface of the lead portion 40a is pressed against the primary bonding pad 21 as a bonding pad to perform bonding. Perform the process.

このボンディング工程は１次ボンディング工程であり、この工程では、具体的には、図３（ａ）に示されるように、ツール１００によって、このワイヤ４０の引き出し部４０ａを半導体チップ２０の１次ボンディングパッド２１に荷重を加えて押し当てて、図３（ａ）中の矢印Ｙに示されるように、両部材２１、４０の接合界面と平行な方向に、超音波振動を加え、必要に応じて熱も加えながら接合し、１次ボンディングを行う。   This bonding step is a primary bonding step. Specifically, in this step, as shown in FIG. 3A, the lead portion 40a of the wire 40 is connected to the primary bonding of the semiconductor chip 20 by a tool 100. As shown in the arrow Y in FIG. 3A, a load is applied to the pad 21 to apply ultrasonic vibration in a direction parallel to the joint interface between the members 21 and 40, as necessary. Bonding while applying heat, primary bonding is performed.

その後、ツール１００によって、ツール１００の先端部１０２からワイヤ４０を引き出しながら、ワイヤ４０を２次ボンディングパッド３０まで引き回す（図３（ｂ）、（ｃ）参照）。   Thereafter, the wire 40 is drawn to the secondary bonding pad 30 by the tool 100 while pulling out the wire 40 from the distal end portion 102 of the tool 100 (see FIGS. 3B and 3C).

次に、２次ボンディングパッド３０まで引き回されたワイヤ４０を、ツール１００の先端部１０２にて２次ボンディングパッド３０に押しつけて、図３（ｃ）中の矢印Ｙに示されるように、両部材３０、４０の接合界面と平行な方向に、超音波振動を加えながら接合し、２次ボンディングを行う。これが２次ボンディング工程である。   Next, the wire 40 routed to the secondary bonding pad 30 is pressed against the secondary bonding pad 30 at the tip end portion 102 of the tool 100, and as shown by an arrow Y in FIG. Secondary bonding is performed by applying ultrasonic vibration in a direction parallel to the bonding interface between the members 30 and 40. This is the secondary bonding process.

そして、図３（ｄ）の矢印に示す順に、ツール１００を上方へ移動させ、２次ボンディングパッド３０からワイヤ４０を切り離す。以上のように、ボール形成工程、粗化工程、１次ボンディング工程、２次ボンディング工程、および、ワイヤ４０の切り離しが、本ワイヤボンディング方法の一連のサイクルである。   Then, the tool 100 is moved upward in the order shown by the arrow in FIG. 3D to disconnect the wire 40 from the secondary bonding pad 30. As described above, the ball forming process, the roughening process, the primary bonding process, the secondary bonding process, and the cutting of the wire 40 are a series of cycles of the present wire bonding method.

この一連のサイクルにおいて１組の１次ボンディングパッド２１と２次ボンディングパッド３０とをワイヤ４０で結線し、ワイヤ４０の切り離しを行った後、別の組の両パッド２１、３０をボンディングするために、再び、ボール形成工程を行い、次のサイクルを開始するのである。   In this series of cycles, one set of the primary bonding pad 21 and the secondary bonding pad 30 are connected by the wire 40, and after the wire 40 is cut off, in order to bond the two pads 21 and 30 of another set. Then, the ball forming process is performed again, and the next cycle is started.

そして、本実施形態では、この一連のサイクルを、ワイヤ４０の接続が必要な各パッド２１、３０の数だけ繰り返す。そして、このサイクルを複数回繰り返すことにより、半導体チップ２０上の複数個の１次ボンディングパッド２１と基板１０上の２次ボンディングパッド３０とが、ワイヤ４０を介して接続されるのである。   In this embodiment, this series of cycles is repeated as many times as the number of pads 21 and 30 that require connection of the wires 40. By repeating this cycle a plurality of times, the plurality of primary bonding pads 21 on the semiconductor chip 20 and the secondary bonding pads 30 on the substrate 10 are connected via the wires 40.

ところで、本実施形態のワイヤボンディング方法によれば、ボール形状の引き出し部４０ａを粗化部材２００に荷重を加えて潰すように塑性変形させ、その表面を粗化することにより、引き出し部４０ａにおける１次ボンディングパッド２１との接合部の表面積が増加するとともに、当該接合部の表面には、引き出し部４０ａの内部の部位が外部に生まれ出てなる新生面が適切に形成される。   By the way, according to the wire bonding method of the present embodiment, the ball-shaped lead portion 40a is plastically deformed so as to be crushed by applying a load to the roughening member 200, and the surface thereof is roughened. The surface area of the joint portion with the next bonding pad 21 is increased, and a new surface is appropriately formed on the surface of the joint portion.

たとえば、上記従来の特許文献３のようにワイヤを扁平体にするだけでも、その塑性変形により新生面は形成されるが、さらに本実施形態のように、ワイヤ４０における引き出し部４０ａの表面を粗化させるようにすれば、ボール形状とされた後に引き出し部４０ａの表面に存在する酸化膜等の不要な被膜が、当該粗化によって破壊され、新生面が現れやすくなる。   For example, even if the wire is made flat as in the above-mentioned conventional patent document 3, a new surface is formed by the plastic deformation, but the surface of the lead portion 40a in the wire 40 is further roughened as in this embodiment. By doing so, an unnecessary film such as an oxide film existing on the surface of the lead portion 40a after being formed into a ball shape is destroyed by the roughening, and a new surface is likely to appear.

また、被接合用パッドである１次ボンディングパッド２１はアルミニウム等よりなるため、ワイヤ４０との接合前においては、その表面にも酸化膜等の不要な膜が存在することが多い。これについては、粗化された引き出し部４０ａを１次ボンディングパッド２１に押し付けたとき、当該引き出し部４０ａにおける粗化された面の凹凸によって、１次ボンディングパッド２１の表面の不要な膜が破壊されるので、１次ボンディングパッド２１の表面にも当該パッド２１の新生面が形成されやすくなる。   In addition, since the primary bonding pad 21 which is a bonding pad is made of aluminum or the like, an unnecessary film such as an oxide film often exists on the surface before bonding to the wire 40. In this regard, when the roughened lead portion 40a is pressed against the primary bonding pad 21, an unnecessary film on the surface of the primary bonding pad 21 is destroyed by the unevenness of the roughened surface of the lead portion 40a. Therefore, a new surface of the pad 21 is easily formed on the surface of the primary bonding pad 21.

つまり、本実施形態のワイヤボンディング方法によれば、ワイヤ４０側および１次ボンディングパッド２１側の両方において新生面が形成されやすく、それによって互いに新生面同士が接合されるようになるため、接合性の向上が実現できるのである。   That is, according to the wire bonding method of the present embodiment, a new surface is easily formed on both the wire 40 side and the primary bonding pad 21 side, whereby the new surfaces are joined to each other, thereby improving the bondability. Can be realized.

そして、引き出し部４０ａにおける当該接合部の表面が粗化されているため、ボンディング時におけるワイヤ４０の横滑り、すなわちパッド２１とワイヤ４０との接合界面に平行な方向への滑りが抑制され、超音波エネルギーが効率よく消費される。   And since the surface of the said junction part in the drawer | drawing-out part 40a is roughened, the side slip of the wire 40 at the time of bonding, ie, the slip to the direction parallel to the joining interface of the pad 21 and the wire 40, is suppressed, and ultrasonic waves Energy is consumed efficiently.

よって、本実施形態のワイヤボンディング方法によれば、低エネルギーで適切にワイヤ４０を被接合用パッド２１に接合することができ、結果、被接合用パッド２１および当該パッド２１の下地へのダメージの軽減が図れる。また、本方法によれば、低荷重でボンディングできるため、Ｃｕなどの硬い金属系ワイヤによっても、低ダメージでボンディングが可能となる。   Therefore, according to the wire bonding method of the present embodiment, the wire 40 can be appropriately bonded to the bonded pad 21 with low energy, and as a result, damage to the bonded pad 21 and the base of the pad 21 can be reduced. Reduction can be achieved. Further, according to this method, since bonding can be performed with a low load, bonding can be performed with low damage even with a hard metal wire such as Cu.

（第２実施形態）
図４は、本発明の第２実施形態に係る半導体装置Ｓ２の概略断面構成を示す図である。本実施形態の半導体装置Ｓ２は、上記第１実施形態の半導体装置Ｓ１に比べて、さらに粗化部材２００を備えたことが相違するものである。 (Second Embodiment)
FIG. 4 is a diagram showing a schematic cross-sectional configuration of a semiconductor device S2 according to the second embodiment of the present invention. The semiconductor device S2 of the present embodiment is different from the semiconductor device S1 of the first embodiment in that a roughening member 200 is further provided.

本実施形態の半導体装置Ｓ２も、ワイヤボンディングによってワイヤ４０が接合される被接合用パッドとしての１次ボンディングパッド２１を半導体チップ２０に有しており、基板１０上に２次ボンディングパッド３０を有し、これら両パッド２１、３０が上記第１実施形態と同様のワイヤボンディング方法によって形成されたワイヤ４０を介して接続されたものである。   The semiconductor device S2 of this embodiment also has a primary bonding pad 21 as a bonded pad to which the wire 40 is bonded by wire bonding in the semiconductor chip 20, and has the secondary bonding pad 30 on the substrate 10. These pads 21 and 30 are connected via a wire 40 formed by the same wire bonding method as in the first embodiment.

ここで、本半導体装置Ｓ２においては、基板１０の一面に、その表面がセラミックまたは樹脂よりなり且つ粗化された粗化部材２００が設けられている。この粗化部材２００は、上記第１実施形態と同様のものであり、ここでは、基板２００の一面に対して、接着やろう付けなどにより接合・固定されている。   Here, in the semiconductor device S2, a roughening member 200 whose surface is made of ceramic or resin and is roughened is provided on one surface of the substrate 10. The roughening member 200 is the same as that in the first embodiment. Here, the roughening member 200 is bonded and fixed to one surface of the substrate 200 by adhesion, brazing, or the like.

本実施形態によれば、被接合用パッドである１次ボンディングパッド２１が設けられている半導体装置Ｓ２自身に、粗化部材２００を設けているから、上記第１実施形態のように、ワイヤボンディング装置などに別途粗化部材を用意することなく、この半導体装置Ｓ２の粗化部材２００を用いて上記第１実施形態と同様のワイヤボンディング方法が適切に行える。   According to the present embodiment, since the roughening member 200 is provided in the semiconductor device S2 itself provided with the primary bonding pad 21 that is a bonded pad, as in the first embodiment, the wire bonding is performed. The wire bonding method similar to that in the first embodiment can be appropriately performed using the roughening member 200 of the semiconductor device S2 without preparing a roughening member separately in the apparatus or the like.

よって、本実施形態によれば、低エネルギーで適切にワイヤ４０を被接合用パッド２１に接合できるワイヤボンディング方法によって、ワイヤ４０を接合するのに適した半導体装置Ｓ２が提供される。   Therefore, according to the present embodiment, the semiconductor device S2 suitable for bonding the wire 40 is provided by the wire bonding method capable of appropriately bonding the wire 40 to the pad 21 to be bonded with low energy.

（第３実施形態）
図５は、本発明の第３実施形態に係るワイヤボンディング方法におけるボール形成工程、粗化工程を示す工程図である。本実施形態のワイヤボンディング方法は、上記第１実施形態のワイヤボンディング方法において粗化部材２００の形状を変更したものである。 (Third embodiment)
FIG. 5 is a process diagram showing a ball forming process and a roughening process in the wire bonding method according to the third embodiment of the present invention. The wire bonding method of the present embodiment is obtained by changing the shape of the roughening member 200 in the wire bonding method of the first embodiment.

上記第１実施形態の粗化部材２００は、上記図２に示されるように、ワイヤ４０の引き出し部４０ａが押し付けられる面が平坦な粗化面であったが、図５に示されるように、本方法における粗化部材２００は、円錐状に凹んだ凹部２０１を有し、この凹部２０１の内面が粗化面とされている。   As shown in FIG. 2, the roughening member 200 of the first embodiment has a flat roughened surface against which the lead portion 40 a of the wire 40 is pressed, but as shown in FIG. 5, The roughening member 200 in this method has a concave portion 201 that is recessed in a conical shape, and the inner surface of the concave portion 201 is a roughened surface.

そして、ボール形成工程によってボール形状とされたワイヤ４０の引き出し部４０ａは（図５（ａ）参照）、粗化工程では、図５（ｂ）に示されるように、この凹部２０１に押し付けられ、凹部２０１の形状にならって塑性変形する。それゆえ、図５（ｃ）に示されるように、粗化された引き出し部４０ａの部分は円錐状の突起形状となり、その円錐の側面が粗化された面とされる。   Then, the lead-out portion 40a of the wire 40 that has been formed into a ball shape by the ball forming step (see FIG. 5A) is pressed against the concave portion 201 in the roughening step, as shown in FIG. 5B, It is plastically deformed following the shape of the recess 201. Therefore, as shown in FIG. 5C, the roughened portion of the lead-out portion 40a has a conical protrusion shape, and the side surface of the cone is a roughened surface.

そして、続く１次ボンディング工程では、この引き出し部４０ａにおける円錐状の突起部分を、その先端部側から１次ボンディングパッド２１に押し付け、当該突起部分を潰しながらボンディングを行う。その後は、上記同様に２次ボンディング工程を行う。   In the subsequent primary bonding step, the conical protrusion portion of the lead portion 40a is pressed against the primary bonding pad 21 from the tip end side, and bonding is performed while the protrusion portion is crushed. Thereafter, the secondary bonding process is performed in the same manner as described above.

このように、本実施形態のボンディング方法によれば、粗化工程において、引き出し部４０ａの変形が上記第１実施形態に比べて、より大きいものとなるので、新生面もより出やすくなることが期待される。なお、本実施形態の粗化部材２００は、ワイヤボンディング装置に備えられたものに限らず、上記第２実施形態のように半導体装置に備えられたものであってもよい。   As described above, according to the bonding method of the present embodiment, in the roughening step, the deformation of the lead portion 40a is larger than that in the first embodiment, so that a new surface is expected to be more likely to appear. Is done. The roughening member 200 of this embodiment is not limited to that provided in the wire bonding apparatus, but may be provided in the semiconductor device as in the second embodiment.

（第４実施形態）
図６は、本発明の第４実施形態に係るワイヤボンディング方法におけるボール形成工程、粗化工程を示す工程図である。本実施形態のワイヤボンディング方法は、上記第１実施形態のワイヤボンディング方法において粗化工程の後であって１次ボンディング工程の前に、ワイヤ４０の引き出し部４０ａに活性化処理を施すものである。 (Fourth embodiment)
FIG. 6 is a process diagram showing a ball forming process and a roughening process in the wire bonding method according to the fourth embodiment of the present invention. The wire bonding method of the present embodiment performs an activation process on the lead-out portion 40a of the wire 40 after the roughening step and before the primary bonding step in the wire bonding method of the first embodiment. .

本実施形態では、ボール形成工程（図６（ａ）参照）、粗化工程（図６（ｂ）参照）によって、粗化された引き出し部４０ａの当該粗化面に対して、さらに、プラズマ照射やスパッタリングを行ってクリーニングすることにより、当該粗化面を清浄化する。この清浄化により、さらに新生面を多く出すことが可能となる。   In the present embodiment, plasma irradiation is further performed on the roughened surface of the lead portion 40a roughened by the ball forming step (see FIG. 6A) and the roughening step (see FIG. 6B). The roughened surface is cleaned by cleaning by sputtering. By this cleaning, it becomes possible to bring out more new surfaces.

その後は、本実施形態においても、１次ボンディング工程、２次ボンディング工程を行えばよい。なお、本実施形態の活性化処理工程は、上記第１実施形態に限らず、上記第２実施形態および上記第３実施形態に対して組み合わせて適用してもよい。   Thereafter, also in the present embodiment, the primary bonding process and the secondary bonding process may be performed. Note that the activation process of the present embodiment is not limited to the first embodiment, and may be applied in combination to the second embodiment and the third embodiment.

（第５実施形態）
図７は、本発明の第５実施形態に係るワイヤボンディング方法における粗化工程を示す工程図である。本実施形態の粗化工程は、ワイヤ４０の引き出し部４０ａが押し付けられた後の粗化部材２００をクリーニングして、常に異物や汚れ等が付着していないクリーンな粗化部材２００とするものである。 (Fifth embodiment)
FIG. 7 is a process diagram showing a roughening process in the wire bonding method according to the fifth embodiment of the present invention. The roughening process of this embodiment is to clean the roughening member 200 after the lead portion 40a of the wire 40 is pressed, and to make a clean roughening member 200 to which no foreign matter or dirt is always attached. is there.

図７（ａ）では、粗化部材２００を連続した環状のベルトとして構成し、電動のローラなどで一方向へ回転させるようにする。そして、このベルトとしての粗化部材２００の外周面を粗化面とし、押し付け箇所２００ａを通る粗化部材２００に対して、図７（ｃ）に示されるように、引き出し部４０ａを押し付けて粗化する。   In FIG. 7A, the roughening member 200 is configured as a continuous annular belt and is rotated in one direction by an electric roller or the like. Then, the outer peripheral surface of the roughening member 200 as the belt is used as a roughening surface, and the roughening member 200 passing through the pressing location 200a is pressed against the roughening member 200 as shown in FIG. Turn into.

一方、粗化部材２００の外周面のうち引き出し部４０ａが押し付けられた部分は、上記回転によってクリーニング箇所２００ｂまで移動し、そこでクリーニング装置３００によって清掃される。具体的には、空気の吹き付け・吸引や水洗・乾燥などによりクリーニングされ、図７（ｄ）に示されるように、表面の汚れや異物が除去される。   On the other hand, the portion of the outer peripheral surface of the roughening member 200 where the drawer 40 a is pressed moves to the cleaning location 200 b by the rotation, and is cleaned by the cleaning device 300 there. Specifically, the surface is cleaned by blowing / suctioning, rinsing / drying, etc., and the dirt and foreign matter on the surface are removed as shown in FIG.

なお、このワイヤ４０の引き出し部４０ａの押し付け、クリーニングは、図７（ｂ）に示されるように、粗化部材２００を左右方向に移動させることにより行ってもよい。この場合、たとえば左側を押し付け箇所２００ａとし、右側をクリーニングアイランド箇所２００ｂとして、粗化部材２００を移動させればよい。   Note that the pressing and cleaning of the lead portion 40a of the wire 40 may be performed by moving the roughening member 200 in the left-right direction, as shown in FIG. 7B. In this case, for example, the roughening member 200 may be moved by setting the left side as the pressing portion 200a and the right side as the cleaning island portion 200b.

本実施形態によれば、複数のワイヤ４０のボンディングを行うときに、粗化部材２００を常にクリーンな状態に保持しつつ、連続して粗化工程を行うことができるので、効率的である。   According to this embodiment, when bonding a plurality of wires 40, the roughening process can be continuously performed while the roughening member 200 is always kept clean, which is efficient.

（他の実施形態）
なお、本ワイヤボンディング方法は、上述したような半導体チップ２０の被接合用パッド２１と基板１０上のパッド３０とを接続する場合に限定するものではなく、たとえば異なる半導体チップのパッド同士、あるいは、異なる基板のパッド同士、さらには同一基板における異なるパッド間の接続などにも適用できることはもちろんである。 (Other embodiments)
The wire bonding method is not limited to the case where the bonding pads 21 of the semiconductor chip 20 and the pads 30 on the substrate 10 are connected as described above. For example, pads of different semiconductor chips or Of course, the present invention can also be applied to connections between pads on different substrates, or between different pads on the same substrate.

２１ 被接合用パッドとしての１次ボンディングパッド
４０ ワイヤ
４０ａ ワイヤの引き出し部
２００ 粗化部材 21 Primary Bonding Pad as Bonded Pad 40 Wire 40a Wire Leading Part 200 Roughening Member

Claims (4)

ワイヤ（４０）を被接合用パッド（２１）にワイヤボンディングする方法であって、
先端部から前記ワイヤ（４０）が引き出されるようになっているワイヤボンディング用のツール（１００）を用い、前記ツール（１００）の先端部から引き出された前記ワイヤ（４０）の引き出し部（４０ａ）を溶融させてボール形状とするボール形成工程と、
その後、前記ツール（１００）によって、前記被接合用パッド（２１）に前記引き出し部（４０ａ）を押し当て当該引き出し部（４０ａ）に超音波を印加することにより、前記被接合用パッド（２１）に前記引き出し部（４０ａ）を接合するボンディング工程と、を備えるワイヤボンディング方法において、
前記ボール形成工程の後、前記ボール形状の引き出し部（４０ａ）を、表面が粗化された粗化部材（２００）に押し付けて、当該引き出し部（４０ａ）が前記粗化部材（２００）に押し付けられた部位から潰れるように塑性変形させることにより、前記引き出し部（４０ａ）の表面のうち前記粗化部材（２００）に押し付けられた部位を粗化する粗化工程を行い、
その後、前記引き出し部（４０ａ）の表面のうち前記粗化された部位を、前記被接合用パッド（２１）に押し当てて前記ボンディング工程を行うことを特徴とするワイヤボンディング方法。 A method of wire bonding a wire (40) to a pad (21) to be bonded,
Using a wire bonding tool (100) in which the wire (40) is drawn from the tip, the lead (40a) of the wire (40) drawn from the tip of the tool (100) Forming a ball into a ball shape by melting
Thereafter, the tool (100) is used to press the lead part (40a) against the pad (21) to be joined and to apply ultrasonic waves to the lead part (40a), whereby the pad (21) to be joined is applied. A bonding step of bonding the lead portion (40a) to a wire bonding method,
After the ball forming step, the ball-shaped lead portion (40a) is pressed against the roughening member (200) whose surface is roughened, and the lead-out portion (40a) is pressed against the roughening member (200). Performing a roughening step of roughening the portion pressed against the roughening member (200) out of the surface of the lead-out portion (40a) by plastically deforming so as to be crushed from the formed portion;
Thereafter, the bonding step is performed by pressing the roughened portion of the surface of the lead portion (40a) against the pad (21) to be bonded. 前記ワイヤ（４０）は金よりなり、前記被接合用パッド（２１）はアルミニウムよりなるものであることを特徴とする請求項１に記載のワイヤボンディング方法。   The wire bonding method according to claim 1, wherein the wire (40) is made of gold, and the bonding pad (21) is made of aluminum. ワイヤボンディングによってワイヤ（４０）が接合される被接合用パッド（２１）を有し、前記被接合用パッド（２１）に前記ワイヤ（４０）が接合されてなる半導体装置であって、
表面がセラミックまたは樹脂よりなり且つ粗化された粗化部材（２００）が設けられていることを特徴とする半導体装置。 A semiconductor device having a bonding pad (21) to which a wire (40) is bonded by wire bonding, wherein the wire (40) is bonded to the bonding pad (21);
A semiconductor device comprising a roughening member (200) having a surface made of ceramic or resin and roughened. 前記ワイヤ（４０）は金よりなり、前記被接合用パッド（２１）はアルミニウムよりなるものであることを特徴とする請求項３に記載の半導体装置。   The semiconductor device according to claim 3, wherein the wire (40) is made of gold, and the bonding pad (21) is made of aluminum.
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JP2011181839A (en) * 2010-03-03 2011-09-15 Mitsubishi Electric Corp Wire bonding method
CN110729207A (en) * 2019-10-12 2020-01-24 闳康技术检测(上海)有限公司 Bonding method of packaging and routing

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JPH0685012A (en) * 1992-09-04 1994-03-25 Casio Comput Co Ltd Wire bonding method
JP2009070930A (en) * 2007-09-12 2009-04-02 Panasonic Corp Semiconductor device and its manufacturing method

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JP2011181839A (en) * 2010-03-03 2011-09-15 Mitsubishi Electric Corp Wire bonding method
CN110729207A (en) * 2019-10-12 2020-01-24 闳康技术检测(上海)有限公司 Bonding method of packaging and routing
CN110729207B (en) * 2019-10-12 2021-07-13 闳康技术检测(上海)有限公司 Bonding method of packaging and routing

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