JP2011091105A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011091105A5 JP2011091105A5 JP2009241683A JP2009241683A JP2011091105A5 JP 2011091105 A5 JP2011091105 A5 JP 2011091105A5 JP 2009241683 A JP2009241683 A JP 2009241683A JP 2009241683 A JP2009241683 A JP 2009241683A JP 2011091105 A5 JP2011091105 A5 JP 2011091105A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- lead pin
- eyelet
- heat sink
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
図１Ａは、従来の半導体レーザ用パッケージであるガラス端子１１を例示する図である。図１Ａの（ａ）は上側の平面図、（ｂ）は正面図である。ガラス端子１１は、アイレット部１２、リードピン１３ａ、アースリードピン１３ｂ、ヒートシンク１４等で構成されている。アイレット部１２は、貫通孔１５を有し、貫通孔１５においてガラス１６を介して、リードピン１３ａを気密に固着している。アースリードピン１３ｂは、アイレット部１２にスポット溶接により、固着される。ヒートシンク１４は、半導体レーザ素子の載置領域１７を有し、半導体レーザ素子の放熱の機能を有しており、銀ろう付け等によりアイレット部１２と固着されている。アイレット部１２、ヒートシンク１４の材料には、それぞれ、鉄または鉄合金、銅または銅合金等を使用する。リードピン１３ａは、端部分１８において、ワイヤボンディングにより、半導体レーザ素子と接続される。半導体レーザ素子が、熱伝導性に優れた銀ペースト等を介して、載置領域１７に搭載され、半導体レーザ装置が形成される。
FIG. 1A is a view illustrating a glass terminal 11 which is a conventional package for a semiconductor laser. (A) of FIG. 1A is a plan view of the upper side, and (b) is a front view. The glass terminal 11 is configured of an eyelet portion 12, a lead pin 13a, an earth lead pin 13b, a heat sink 14, and the like. Eyelet portion 12 has a through-hole 1 5, via the glass 16 in the through hole 15, are fixed to the lead pin 13a airtight. The earth lead pin 13 b is fixed to the eyelet portion 12 by spot welding. The heat sink 14 has a mounting area 17 for the semiconductor laser element, has a heat radiation function of the semiconductor laser element, and is fixed to the eyelet 12 by silver brazing or the like. As materials of the eyelet portion 12 and the heat sink 14, iron or iron alloy, copper or copper alloy or the like is used, respectively. The lead pin 13a is connected to the semiconductor laser element at the end portion 18 by wire bonding. The semiconductor laser device is mounted on the mounting area 17 via silver paste or the like excellent in thermal conductivity, and the semiconductor laser device is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009241683A JP5465508B2 (en) | 2009-10-20 | 2009-10-20 | Semiconductor laser package, semiconductor laser device, and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009241683A JP5465508B2 (en) | 2009-10-20 | 2009-10-20 | Semiconductor laser package, semiconductor laser device, and manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011091105A JP2011091105A (en) | 2011-05-06 |
| JP2011091105A5 true JP2011091105A5 (en) | 2012-09-06 |
| JP5465508B2 JP5465508B2 (en) | 2014-04-09 |
Family
ID=44109120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009241683A Expired - Fee Related JP5465508B2 (en) | 2009-10-20 | 2009-10-20 | Semiconductor laser package, semiconductor laser device, and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5465508B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9065815B2 (en) | 2011-04-15 | 2015-06-23 | Nec Corporation | Computer system, controller, and method of controlling network access policy |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02125687A (en) * | 1988-11-04 | 1990-05-14 | Sony Corp | Semiconductor laser device |
| JPH03128982U (en) * | 1990-04-05 | 1991-12-25 | ||
| JP2510162Y2 (en) * | 1990-04-25 | 1996-09-11 | ソニー株式会社 | Semiconductor laser equipment |
| JPH0428492U (en) * | 1990-06-30 | 1992-03-06 | ||
| JPH0964485A (en) * | 1995-06-13 | 1997-03-07 | Fuji Electric Co Ltd | Semiconductor laser device |
| JP2951243B2 (en) * | 1995-08-31 | 1999-09-20 | 三洋電機株式会社 | Integrated circuit package |
| JP2000353850A (en) * | 1999-06-11 | 2000-12-19 | Sharp Corp | Semiconductor laser |
| JP2005251838A (en) * | 2004-03-02 | 2005-09-15 | Sharp Corp | Semiconductor laser |
| JP4395036B2 (en) * | 2004-09-17 | 2010-01-06 | 富士通株式会社 | Optical module |
| JP4948436B2 (en) * | 2008-02-01 | 2012-06-06 | 新光電気工業株式会社 | Laser device frame package and manufacturing method thereof |
-
2009
- 2009-10-20 JP JP2009241683A patent/JP5465508B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3142012U (en) | Radiator with heat pipe | |
| JP2017092136A5 (en) | ||
| JP2008294384A5 (en) | ||
| JP2008258411A5 (en) | ||
| JP2011023574A5 (en) | ||
| JP2006516361A5 (en) | ||
| JP2015115419A5 (en) | ||
| JP2011091105A5 (en) | ||
| JP2020505792A5 (en) | ||
| JP2009260049A5 (en) | ||
| JP2009077341A5 (en) | ||
| JP2007103810A (en) | Semiconductor device and method of manufacturing same | |
| JP2009016794A (en) | Capless package and its production method | |
| CN103021973A (en) | Airtightness packaging radiating structure of integrated circuit | |
| CN203367267U (en) | Solder dosage-self adaptive rectifier structure | |
| JP2012244035A (en) | Semiconductor device and manufacturing method of the same | |
| JP2015230990A5 (en) | ||
| JP2016213467A5 (en) | ||
| TWI274524B (en) | Heat fixture for wire bonding | |
| CN211238808U (en) | Semiconductor laser with heat radiation module | |
| CN102054799A (en) | Encapsulating structure with exposed inner pin, inverted chip and radiating block provided with lock hole and externally connected with radiator through projecting post | |
| JP2007048839A (en) | Semiconductor element | |
| JP2011222707A (en) | Power semiconductor device | |
| JP2007103685A5 (en) | ||
| JP2010098144A (en) | Lead frame and semiconductor device |