JP2011086763A - Method of manufacturing semiconductor device, semiconductor device, method of manufacturing the electronic component, and electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of stably performing electrical connection between connection members provided at a semiconductor wafer and semiconductor chips stacked thereon, and capable of manufacturing a semiconductor-chip bonded object with a satisfactory yield, the semiconductor device manufactured by the method, a method of manufacturing an electronic component having high connection reliability, and the electronic component manufactured by the method. <P>SOLUTION: An electrically conductive connection material having a laminated structure composed of a resin composite and metal foil selected from solder foil and tin foil is interposed between a semiconductor wafer and semiconductor chips, and furthermore, the resultant object is heated to melt the metal foil. The metal foil is aggregated between connection electrodes of the semiconductor wafer and connection electrodes of the semiconductor chips, and solidified therebetween while the resin composite is also cured or solidified. Thereby, the electronic component is obtained by fastening the semiconductor wafer and the semiconductor chips to each other. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method, a semiconductor device, an electronic component manufacturing method, and an electronic component.

  In recent years, development of high-density mounting technology for semiconductor integrated circuits has been promoted in response to demands for higher functionality and miniaturization of electronic devices. As one of such mounting techniques, a chip-on-chip (COC) type system-in-package (SiP) semiconductor device in which other semiconductor chips are stacked on a semiconductor chip is proposed. This structure is attracting attention because it is excellent in that the package can be thinned (see, for example, Patent Document 1).

  For stacking other semiconductor chips on such a semiconductor chip, for example, a method of bonding individual semiconductor chips cut out from a wafer in a stacked state is used. However, in such a method, that is, a method of obtaining a stacked body of semiconductor chips by joining individual semiconductor chips, when many stacked bodies are manufactured, the number of steps is increased, and time and labor are required. Therefore, there is a problem that productivity cannot be improved.

  As a method for solving such a problem, the following method for manufacturing a SiP semiconductor device in which a semiconductor chip and a semiconductor wafer are bonded has been proposed.

  First, as shown in FIG. 6A, a first first semiconductor chip 510 having a connection part 511 and a semiconductor wafer 520 having a connection part 521 are prepared, and the connection part 521 corresponds to the connection part 511. Thus, the first semiconductor chip 510 and the semiconductor wafer 520 are positioned and bonded to obtain a first semiconductor chip / semiconductor wafer bonded body 530 in which they are bonded (see FIG. 6B).

  Next, as shown in FIG. 6B, the joined body 530 is separated into pieces (dicing). Thus, a joined body of the first semiconductor chip 510 and the second semiconductor chip 540 cut out from the semiconductor wafer 520 electrically connected at the connection portion 511 and the connection portion 521, that is, FIG. A semiconductor chip assembly 550 as shown in c) is formed.

  Then, as shown in FIG. 6D, the semiconductor chip assembly 550 is mounted on the interposer 630 including the wiring pattern 640 and the bump 620 via the wiring pattern 640, whereby an electronic component of SiP. A method of manufacturing 100 has been proposed.

  Here, in the bonding of the first semiconductor chip 510 and the semiconductor wafer 520 in FIG. 6A, for example, in the state where an anisotropic conductive film (ACF) is interposed between them, It can be considered that the semiconductor chip 510 and the semiconductor wafer 520 are bonded by pressure bonding. In the joining of the first semiconductor chip 510 and the semiconductor wafer 520 using such an ACF, the metal particles contained in the ACF and the connection portion come into contact with each other, that is, by the point contact between the metal particles, the connection portion 511, Electrical connection between 521 is secured.

When the electronic component 100 is driven in such a state, the resin component contained in the ACF expands / contracts due to heat generated from the semiconductor chip assembly 550 and fluctuations in the outside air temperature. As a result, the distance between the connecting portions varies, and in some cases, the metal particles and the connecting portions are not in contact with each other, and the resistance value between the connecting portions 511 and 521 does not fluctuate or become conductive. For this reason, there is a problem in that stable conduction cannot be obtained between the connection portions 511 and 521 when the first semiconductor chip 510 and the semiconductor wafer 520 are bonded using ACF.

JP 2004-152778 A

  SUMMARY OF THE INVENTION An object of the present invention is to stably perform electrical connection between connecting portions of a stacked semiconductor wafer and a semiconductor chip, and a semiconductor wafer / semiconductor chip assembly in which the semiconductor wafer and the semiconductor chip are bonded. It is an object to provide a method of manufacturing a semiconductor device and a semiconductor device capable of obtaining the above. Another object is to provide a method of manufacturing an electronic component with high connection reliability and an electronic component by separating the obtained semiconductor wafer / semiconductor chip assembly into individual pieces.

Such an object is achieved by the present invention described in the following (1) to (13).
(1) A method for manufacturing a semiconductor device in which a semiconductor wafer and a first semiconductor chip are stacked and electrically connected, wherein the semiconductor wafer and the first semiconductor chip are respectively prepared; Between the semiconductor wafer and the first semiconductor chip, a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil is interposed, and the semiconductor wafer Semiconductor wafer / first semiconductor chip in which the semiconductor wafer and the first semiconductor chip are laminated by positioning so that the first terminal of the first semiconductor chip and the second terminal of the first semiconductor chip correspond to each other A second step of obtaining a laminate;
The metal foil is melted by heating the semiconductor wafer / first semiconductor chip stack, and the metal foil is interposed between the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip. Then, the resin composition is hardened or solidified, and the semiconductor wafer and the first semiconductor chip are fixed to each other, whereby the solidified product of the aggregate obtained by melting the metal foil. And a third step of obtaining a semiconductor wafer / first semiconductor chip assembly in which the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip are electrically connected. A method of manufacturing a semiconductor device,
(2) The method for manufacturing a semiconductor device according to (1), wherein a second semiconductor chip is further disposed on a surface opposite to the second terminal of the first semiconductor chip,
(3) A method of manufacturing a semiconductor device in which the semiconductor wafer / first semiconductor chip assembly and a second semiconductor chip having a fourth terminal are stacked and electrically connected, the semiconductor wafer / first A resin composition between the first step of preparing each semiconductor chip assembly and the second semiconductor chip, and between the semiconductor wafer / first semiconductor chip assembly and the second semiconductor chip. And a conductive connecting material having a laminated structure composed of a metal foil selected from solder foil or tin foil, and disposed on the surface opposite to the second terminal of the first semiconductor chip A semiconductor wafer / first semiconductor in which the third wafer and the fourth terminal are positioned so as to correspond to each other, and the semiconductor wafer / first semiconductor chip assembly and the second semiconductor chip are stacked. A second step of obtaining a second semiconductor chip stack, and heating the semiconductor wafer / first semiconductor chip / second semiconductor chip stack to melt the metal foil, 3, the metal foil is aggregated between the fourth terminal and the fourth terminal, and then solidified, and further, the resin composition is cured or solidified to form the semiconductor wafer / first semiconductor chip assembly and the When the second semiconductor chip is fixed, the agglomerated solidified product obtained by melting the metal foil electrically connects the semiconductor wafer / first semiconductor chip assembly and the second semiconductor chip. (1) or (2), wherein the semiconductor wafer / first semiconductor chip / second semiconductor chip assembly is obtained.
A method for manufacturing the semiconductor device according to claim 1,
(4) In the third step, when the semiconductor wafer / first semiconductor chip stack or the semiconductor wafer / first semiconductor chip / second semiconductor chip stack is heated, The method for manufacturing a semiconductor device according to any one of (1) to (3), wherein the resin composition is completely cured or solidified after being melted.
(5) The method for manufacturing a semiconductor device according to any one of (1) to (4), wherein the resin composition includes a thermosetting resin.
(6) The method for manufacturing a semiconductor device according to any one of (1) to (5), wherein the resin composition includes a compound having a flux function.
(7) The method for manufacturing a semiconductor device according to any one of (1) to (6), wherein the conductive connection material includes a laminated structure including a resin composition layer / metal foil layer / resin composition layer,
(8) The method for manufacturing a semiconductor device according to any one of (1) to (6), wherein the conductive connection material includes a laminated structure including a resin composition layer / metal foil layer.
(9) A semiconductor device manufactured by the manufacturing method according to any one of (1) to (8),
(10) The semiconductor wafer / first semiconductor chip assembly or semiconductor wafer / first semiconductor chip / second semiconductor manufactured by the method for manufacturing a semiconductor device according to any one of (1) to (8) A method of manufacturing a semiconductor device, characterized by having a step of cutting a chip assembly into individual semiconductor chips and dividing them into a plurality of semiconductor chips,
(11) A semiconductor device manufactured by the manufacturing method according to (10),
(12) A method of manufacturing an electronic component comprising a step of mounting the singulated semiconductor device on a substrate,
(13) An electronic component manufactured by the manufacturing method according to (12).

  According to the present invention, the semiconductor wafer / semiconductor chip assembly in which the electrical connection between the connection portions of the stacked semiconductor wafer and the semiconductor chip is stably performed, and the semiconductor wafer and the semiconductor chip are bonded. It is possible to provide a method of manufacturing a semiconductor device and a semiconductor device capable of obtaining the above. Furthermore, by separating the obtained semiconductor wafer / semiconductor chip assembly into individual pieces, an electronic component manufacturing method and an electronic component with high connection reliability can be provided.

It is a longitudinal cross-sectional view which shows an example of the electronic component manufactured by the manufacturing method of the electronic component of this invention. It is a longitudinal cross-sectional view which shows an example of the electronic component manufactured by the manufacturing method of the electronic component of this invention. It is a longitudinal cross-sectional view for demonstrating the 1st manufacturing method which joins a semiconductor wafer and a 1st semiconductor chip. It is a longitudinal cross-sectional view for demonstrating the 2nd manufacturing method which joins a semiconductor wafer and a 1st semiconductor chip. It is a longitudinal cross-sectional view for demonstrating the 3rd manufacturing method which joins a semiconductor wafer / 1st semiconductor chip assembly and a 2nd semiconductor chip. It is a figure for demonstrating the method to join the conventional semiconductor chip / semiconductor wafer.

  Hereinafter, a semiconductor device manufacturing method and a semiconductor device of the present invention, and an electronic component manufacturing method and an electronic component will be described in detail based on embodiments shown in the accompanying drawings.

  First, prior to describing the method for manufacturing a semiconductor device of the present invention, an electronic component manufactured by the method for manufacturing an electronic component of the present invention will be described.

  1 and 2 are longitudinal sectional views showing an example of an electronic component manufactured by the electronic component manufacturing method of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  An electronic component 10 shown in FIG. 1 is a chip-on-chip (COC) type system-in-package (SiP), and includes a semiconductor chip (two stacked bodies) 20 and an interposer (substrate) 40 that supports the semiconductor chip 20. The wiring pattern 50 formed in a predetermined pattern and a plurality of conductive bumps (terminals) 60 are provided. The wiring pattern 50 on the semiconductor chip 20 and the interposer (substrate) 40 is electrically connected via a wire (gold wire) 70, and insulation between the connecting parts is maintained by an insulating part 226. .

  An electronic component 90 shown in FIG. 2 is a chip-on-chip (COC) type system-in-package (SiP), and includes a semiconductor chip (two stacked bodies) 30 and an interposer (substrate) 40 that supports the semiconductor chip 30. The wiring pattern 50 formed in a predetermined pattern and a plurality of conductive bumps (terminals) 60 are provided. The wiring pattern 50 on the semiconductor chip 30 and the interposer (substrate) 40 is electrically connected via the conductive portion 225, and the insulating property is maintained between the connecting portions by the insulating portion 226.

  The interposer 40 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin). The plan view shape of the interposer 40 is usually a quadrangle such as a square or a rectangle.

  On the upper surface (one surface) of the interposer 40, for example, a wiring pattern 50 made of a conductive metal material such as copper is provided in a predetermined shape.

  The interposer 40 is formed with a plurality of vias (not shown) penetrating in the thickness direction.

  Each bump 60 is electrically connected to a part of the wiring pattern 50 through each via, and protrudes from the lower surface (the other surface) of the interposer 40.

  The portion of the bump 60 that protrudes from the interposer 40 has a substantially spherical shape (Ball shape).

  The bumps 60 are mainly composed of a brazing material such as solder, silver brazing, copper brazing, and phosphor copper brazing.

  The semiconductor chip 20 of the electronic component 10 shown in FIG. 1 and the interposer 40 are bonded by an adhesive 80 made of various resin materials such as epoxy resin, and electrically via a wire (gold wire) 70. It is connected.

  Further, the semiconductor chip (two stacked bodies) 30 of the electronic component 90 shown in FIG. 2 and the wiring pattern 50 are electrically connected.

The electronic components 10 and 90 as shown in FIGS. 1 and 2 can be manufactured as follows, for example.
FIG. 3 is a longitudinal sectional view for explaining a manufacturing method of the semiconductor chip (two stacked bodies) 20, and FIG. 4 is a longitudinal sectional view for explaining a manufacturing method of the semiconductor chip (two stacked bodies) 30. FIG. 5 is a longitudinal sectional view for explaining a method of manufacturing the semiconductor chip (three stacked bodies) 30 ′.

  Hereinafter, the semiconductor wafer 210 and the first semiconductor chip 220 are bonded to each other by using the method for manufacturing a semiconductor device of the present invention, and the semiconductor wafer / first semiconductor chip bonded body 250, 270 and the semiconductor wafer / first semiconductor are bonded. A method of obtaining the chip / second semiconductor chip assembly 290 will be described with reference to FIGS.

<First manufacturing method>
First, a method for obtaining a semiconductor wafer / first semiconductor chip assembly 250 using the first method for manufacturing a semiconductor device will be described with reference to FIG.

  [1A-1] First, a semiconductor wafer 210 and a first semiconductor chip 220 as shown in FIG.

  In the present embodiment, as shown in FIG. 3A, the semiconductor wafer 210 and the first semiconductor chip 220 are provided on their functional surfaces 211 and 221 and are connected to individual circuits. And a second terminal (not shown).

  [1A-2] Next, as shown in FIG. 3B, a laminated structure including a resin composition 61 and a metal foil 62 selected from solder foil or tin foil on the functional surface 211 of the semiconductor wafer 210. The conductive connection material 60 having the following is formed.

  The method for forming the conductive connection material 60 on the functional surface 211 is not particularly limited, and examples thereof include a laminating method and a thermocompression bonding method. However, air bubbles are involved in the interface between the semiconductor wafer 210 and the conductive connection material 60. A method using vacuum lamination that can prevent the above is preferable.

  In the present embodiment, the conductive connecting material 60 is provided alone on the functional surface 211 side of the semiconductor wafer 210, but may be provided independently on the functional surface 221 side of the first semiconductor chip 220. The semiconductor wafer 210 may be provided on both the functional surface 211 side and the functional surface 221 side of the first semiconductor chip 220. From the viewpoint of simplifying the process in the method for manufacturing a semiconductor device, it is preferable to provide the conductive connection material 60 on either one of the functional surface 211 and the functional surface 221, and the semiconductor wafer / semiconductor to be formed is provided. From the viewpoint of improving the adhesion of the chip bonded body 250, it is preferable to provide the conductive connection material 60 on both the functional surface 211 and the functional surface 221.

Here, the conductive connection material according to the present invention will be described.
The conductive connecting material according to the present invention includes a resin composition containing a resin component and a compound having a flux function, and a metal foil selected from solder foil or tin foil. The form is a laminate having a multilayer structure composed of a resin composition layer and a metal foil layer, and each of the resin composition layer and the metal foil layer may be a single layer or a plurality of layers. The laminated structure of the conductive connecting material is not particularly limited, and may be a two-layer structure (resin composition layer / metal foil layer) of a resin composition layer and a metal foil layer, either a resin composition layer or a metal foil layer, or It may be a three-layer structure including a plurality of both or a multi-layer structure having more. In addition, when using two or more resin composition layers or metal foil layers, the composition of each layer may be the same or different.

In one embodiment of the conductive connection material according to the present invention, from the viewpoint of reducing the surface oxide film of the metal foil with a compound having a flux function, the upper and lower layers of the metal foil layer are preferably resin composition layers. For example, a three-layer structure (resin composition layer / metal foil layer / resin composition layer) is preferable. In this case, the thickness of the resin composition layer on both sides of the metal foil layer may be the same or different. The thickness of the resin composition layer may be appropriately adjusted according to the conductor thickness of the electrode to be connected.

  Hereinafter, the resin composition layer and the metal foil layer constituting the conductive connection material according to the present invention will be described more specifically.

(1) Resin composition layer The resin composition layer according to the present invention is composed of a resin composition containing a resin component and a compound having a flux function. The resin composition can be used in a liquid or solid form at room temperature. In the present invention, “liquid at normal temperature” means a state that does not have a certain form at normal temperature (25 ° C.), and includes a paste form.

The resin composition according to the present invention is not particularly limited as long as it contains a resin component and a compound having a flux function, and a curable resin composition or a thermoplastic resin composition can be used. Examples of the curable resin composition include a curable resin composition that is cured by heating and a curable resin composition that is cured by irradiation with actinic radiation. Especially, the curable resin composition hardened | cured by heating is preferable at the point which is excellent in mechanical characteristics, such as a linear expansion coefficient and an elasticity modulus after hardening.
The thermoplastic resin composition is not particularly limited as long as it is flexible enough to be molded by heating to a predetermined temperature.

(A) Curable resin composition The curable resin composition preferably used as the resin composition according to the present invention contains a curable resin component and a compound having a flux function, and is melted and cured by heating. If there is no particular limitation.

In one embodiment of the present invention, the conductive connection material of the present invention is disposed between the functional surface 211 of the semiconductor wafer and the functional surface of the first semiconductor chip, and the conductive connection material is heated to have a flux function. The surface oxide film of the metal foil is removed by the action of the compound, and the wettability of the metal is enhanced. As a result, the melted solder or tin moves in the curable resin component, and between the terminal (first terminal) of the functional surface 211 of the semiconductor wafer and the terminal (second terminal) of the functional surface of the first semiconductor chip. Can be agglomerated to form a connection. On the other hand, the curable resin component can surround the connection portion to form an insulating portion.
After the first terminal and the second terminal are electrically connected via solder or tin, conduction can be ensured by curing the curable resin component as necessary. Moreover, while ensuring the insulation between adjacent terminals, the mechanical adhesive strength between the 1st terminal and 2nd terminal which oppose can be improved.

(I) Curable resin component The curable resin component which concerns on this invention will not be specifically limited if normally used as an adhesive agent component for semiconductor device manufacture. Such a curable resin component is not particularly limited, but is preferably one that cures at a temperature equal to or higher than the melting point of the metal foil. For example, an epoxy resin, a phenoxy resin, a silicone resin, an oxetane resin, a phenol resin, (Meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin, maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide-triazine resin and the like. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Among these, an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance of the cured product, moisture resistance, and chemical resistance. Moreover, these curable resin components may be used individually by 1 type, or may use 2 or more types together.

The form of the curable resin component according to the present invention can be appropriately selected according to the form of the curable resin composition. When using a liquid curable resin composition, it is preferable to use a liquid curable resin component, and if necessary, a film-forming resin component described later may be used in combination. Moreover, when using a solid curable resin composition, both a liquid and solid curable resin component can be used, and it is preferable to use a film-forming resin component together.

  In the present invention, any epoxy resin that is liquid at room temperature and solid at room temperature can be used as the epoxy resin. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When the curable resin composition is liquid, it is preferable to use an epoxy resin that is liquid at room temperature. When the curable resin composition is solid, both liquid and solid epoxy resins should be used. Is possible, film shape

The epoxy resin that is liquid at room temperature (25 ° C.) according to the present invention is not particularly limited, and examples thereof include bisphenol A type epoxy resins and bisphenol F type epoxy resins. Moreover, you may use together a bisphenol A type epoxy resin and a bisphenol F type epoxy resin.

  The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. If the epoxy equivalent is less than the above lower limit, the shrinkage of the cured product tends to increase, and warping may occur. On the other hand, when the above upper limit is exceeded, when a film-forming resin component is used in combination, the reactivity with the film-forming resin component, particularly the polyimide resin, tends to decrease.

  The epoxy resin solid at room temperature (25 ° C.) according to the present invention is not particularly limited, but is bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidylamine. Type epoxy resin, glycidyl ester type epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin and the like. Among these, solid trifunctional epoxy resin, cresol novolac type epoxy resin and the like are preferable. Moreover, these epoxy resins may be used individually by 1 type, or may use 2 or more types together. The softening point of the epoxy resin that is solid at room temperature is preferably 40 to 120 ° C, more preferably 50 to 110 ° C, and particularly preferably 60 to 100 ° C. When the softening point is within the above range, tackiness can be suppressed and handling can be easily performed.

  In the present invention, commercially available products as such curable resin components can be used, and further, plasticizers, stabilizers, antioxidants, inorganic fillers, antistatic agents, as long as the effects of the present invention are not impaired. What mixed various additives, such as an agent and a pigment, can also be used.

In the conductive connection material according to the present invention, the content of the curable resin component can be appropriately set according to the form of the curable resin composition.
For example, when the curable resin composition is liquid, the content of the curable resin component is preferably 10% by weight or more, more preferably 15% by weight or more, and more preferably 20% by weight with respect to the total weight of the curable resin composition. % Or more is more preferable, 25% by weight or more is further more preferable, 30% by weight or more is still more preferable, and 35% by weight or more is particularly preferable. Moreover, less than 100 weight% is preferable, 9
5 wt% or less is more preferable, 90 wt% or less is more preferable, 75 wt% or less is even more preferable, 65 wt% or less is still more preferable, and 55 wt% or less is particularly preferable.
When the curable resin composition is solid, the content of the curable resin component is preferably 5% by weight or more, more preferably 10% by weight or more, and more preferably 15% by weight with respect to the total weight of the curable resin composition. % Or more is more preferable, and 20% by weight or more is particularly preferable. Moreover, 90 weight% or less is preferable, 85 weight% or less is more preferable, 80 weight% or less is further more preferable, 75 weight% or less is still more preferable, 65 weight% or less is still more preferable, 55 weight% or less is especially preferable.
When the content of the curable resin component is within the above range, the electrical connection strength between the terminals and the mechanical adhesive strength can be sufficiently secured.

(Ii) Film-forming resin component In the present invention, when a solid curable resin composition is used, the curable resin component and the film-forming resin component are preferably used in combination. Such a film-forming resin component is not particularly limited as long as it is soluble in an organic solvent and has film-forming properties alone. Either a thermoplastic resin or a thermosetting resin can be used, and these can be used in combination. Specific film-forming resin components include, for example, (meth) acrylic resins, phenoxy resins, polyester resins, polyurethane resins, polyimide resins, polyamideimide resins, siloxane-modified polyimide resins, polybutadiene resins, polypropylene resins, styrene-butadienes -Styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer Examples thereof include polymers, acrylonitrile-butadiene-styrene copolymers, polyvinyl acetate, and nylon. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, polyamide resins and polyimide resins are preferable. Moreover, these film-forming resin components may be used individually by 1 type, or may use 2 or more types together.

  In the present invention, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a copolymer of (meth) acrylic acid and its derivatives and other monomers. means. Here, “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.

Examples of the (meth) acrylic resin include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, polyacrylic acid-2-ethylhexyl and other polyacrylic acid esters, poly Polymethacrylate such as methyl methacrylate, polyethyl methacrylate, polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile-butadiene copolymer , Acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methyl methacrylate Acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2 -Hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer And ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable. Moreover, these (meth) acrylic resins may be used alone or in combination of two or more.

  Of these (meth) acrylic resins, nitrile groups, epoxy groups, hydroxyl groups, carboxyl groups from the viewpoint of improving adhesion to semiconductor wafers or semiconductor chips and compatibility with other resin components A (meth) acrylic resin obtained by copolymerizing a monomer having a functional group such as is preferable. In such a (meth) acrylic resin, the compounding amount of the monomer having the functional group is not particularly limited, but is 0.1 to 0.1 mol based on 100 mol% of all monomers during the synthesis of the (meth) acrylic resin. It is preferably 50 mol%, more preferably 0.5 to 45 mol%, and particularly preferably 1 to 40 mol%. When the blending amount of the monomer having the functional group is less than the lower limit value, the adhesion tends not to be sufficiently improved. On the other hand, when the upper limit is exceeded, the adhesive force is too strong and the workability is not sufficiently improved. It is in.

  The weight average molecular weight of the (meth) acrylic resin is not particularly limited, but is preferably 100,000 or more, more preferably 150,000 to 1,000,000, and particularly preferably 250,000 to 900,000. When the weight average molecular weight is within the above range, the film forming property can be improved.

  In the present invention, when a phenoxy resin is used as the film-forming resin component, the number average molecular weight is preferably 5000 to 15000, more preferably 6000 to 14000, and particularly preferably 8000 to 12000. By using such a phenoxy resin, the fluidity of the conductive connecting material before curing can be suppressed.

Examples of the skeleton of the phenoxy resin include a bisphenol A type, a bisphenol F type, and a biphenyl type, but are not limited to these in the present invention. A phenoxy resin having a saturated water absorption rate of 1% or less is preferable because it can suppress the occurrence of foaming or peeling at high temperatures during bonding or solder mounting. The saturated water absorption rate is obtained by processing a phenoxy resin into a film having a thickness of 25 μm, drying it in a 100 ° C. atmosphere for 1 hour (an absolutely dry state), and further heating the film at a constant temperature and humidity chamber at 40 ° C. and 90% RH atmosphere. The mass change is measured every 24 hours, and the mass at the time when the mass change is saturated can be calculated by the following formula.
Saturated water absorption (%) = {(mass when saturated) − (mass when absolutely dry)} /
(Mass when absolutely dry) x 100

  The polyimide resin used in the present invention is not particularly limited as long as the resin has an imide bond in the repeating unit. For example, diamine and acid dianhydride are reacted, and the obtained polyamic acid is heated and dehydrated and cyclized. Can be obtained.

  Examples of the diamine include aromatic diamines such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-p-phenylenediamine, Examples thereof include siloxane diamines such as 3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane. These diamines may be used alone or in combination of two or more.

  Examples of the acid dianhydride include 3,3,4,4'-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4'-oxydiphthalic dianhydride, and the like. These acid dianhydrides may be used alone or in combination of two or more.

  The polyimide resin used in the present invention may be either soluble or insoluble in a solvent, but is easy to varnish when mixed with other components, and is solvent-soluble in terms of excellent handling properties. Those are preferred. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The polyamide resin used in the present invention is not particularly limited. For example, ring-opening polymerization of cyclic aliphatic lactam such as 6-nylon and 12-nylon, 6,6-nylon, 4,6-nylon, 6,10 -Nylon, 6,12-nylon, etc., a polycondensation of aliphatic diamine and aliphatic dicarboxylic acid, a polycondensation of aromatic diamine and aliphatic dicarboxylic acid, aromatic diamine and aromatic dicarboxylic acid, And those obtained by condensation polymerization of amino acids.

Although the molecular weight of the polyamide resin used by this invention is not restrict | limited in particular, For example, 5000-100000 are preferable and 8000-50000 are especially preferable. If the molecular weight is not more than the above range, the moldability is good, but the mechanical strength of the film is weak, and if it is not less than the above range, the viscosity becomes high, thereby inhibiting the movement of solder or tin, resulting in poor conduction.
The polyamide resin used in the present invention may be either soluble or insoluble in a solvent, but it is easy to varnish when mixed with other components, and is solvent-soluble in that it is easy to handle. Those are more preferred.

  The polyester resin used in the present invention is not particularly limited, but a divalent acid such as terephthalic acid or a derivative thereof having an ester forming ability is used as an acid component, a glycol having 2 to 10 carbon atoms as a glycol component, other A saturated polyester resin obtained using a divalent alcohol or a derivative thereof having an ester-forming ability.

  Examples of the polyester resin include polyalkylene terephthalate resins such as polyethylene terephthalate resin, polybutylene terephthalate resin, polytrimethylene terephthalate resin, and polyhexamethylene terephthalate resin.

  The polyester resin may be a polyester resin copolymerized with other components as necessary. The component to be copolymerized is not particularly limited, and examples thereof include known acid components, alcohol components, phenol components, derivatives thereof having ester forming ability, polyalkylene glycol components, and the like.

  Examples of the copolymerizable acid component include a divalent or higher aromatic carboxylic acid having 8 to 22 carbon atoms, a divalent or higher aliphatic carbon carboxylic acid having 4 to 12 carbons, and a divalent or higher carbon. The alicyclic carboxylic acid of several 8-15, and these derivatives which have ester formation ability are mentioned. Specific examples of the copolymerizable acid component include terephthalic acid, isophthalic acid, naphthalenedicarboxylic acid, bis (p-carbodiphenyl) methaneanthracene dicarboxylic acid, 4-4′-diphenylcarboxylic acid, and 1,2-bis. (Phenoxy) ethane-4,4′-dicarboxylic acid, 5-sodium sulfoisophthalic acid, adipic acid, sebacic acid, azelaic acid, dodecanedioic acid, maleic acid, trimesic acid, trimellitic acid, pyromellitic acid, 1,3 -Cyclohexanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid and derivatives thereof having the ability to form esters. These can be used alone or in combination of two or more.

Examples of the copolymerizable alcohol and / or phenol component include dihydric or higher aliphatic alcohols having 2 to 15 carbon atoms, divalent or higher alicyclic alcohols having 6 to 20 carbon atoms, and 6 to 40 carbon atoms. These divalent or higher valent aromatic alcohols or phenols and derivatives thereof having the ability to form esters. Specific examples of the copolymerizable alcohol and / or phenol component include ethylene glycol, propanediol, butanediol, hexanediol, decanediol, neopentylglycol, cyclohexanedimethanol, cyclohexanediol, 2,2′-bis ( 4-hydroxyphenyl) propane, 2,2′-bis (4-hydroxycyclohexyl) propane, hydroquinone, glycerin, pentaerythritol, and the like, derivatives having ester forming ability, and cyclic esters such as ε-caprolactone Can be mentioned.

  Examples of the copolymerizable polyalkylene glycol component include polyethylene glycol, polypropylene glycol, polytetramethylene glycol, random or block copolymers thereof, and alkylene glycols of bisphenol compounds (polyethylene glycol, polypropylene glycol, polytetramethylene). And modified polyoxyalkylene glycols such as adducts such as glycol and random or block copolymers thereof.

  In the present invention, commercially available products can be used as such film-forming resin components, and further, plasticizers, stabilizers, inorganic fillers, antistatic agents, pigments, etc., as long as the effects of the present invention are not impaired. What mixed these various additives can also be used.

In the conductive connection material according to the present invention, the content of the film-forming resin component can be appropriately set according to the form of the curable resin composition to be used.
For example, in the case of a solid curable resin composition, the content of the film-forming resin component is preferably 5% by weight or more with respect to the total weight of the curable resin composition, and is 10% by weight. More preferably, it is more preferably 15% by weight or more. Further, it is preferably 50% by weight or less, more preferably 45% by weight or less, and particularly preferably 40% by weight or less. When the content of the film-forming resin component is within the above range, the fluidity of the curable resin composition before melting can be suppressed, and the conductive connecting material can be easily handled.

(Iii) Compound having a flux function The compound having a flux function according to the present invention has an action of reducing the surface oxide film of the metal foil. As the compound having such a flux function, a compound having a phenolic hydroxyl group and / or a carboxyl group is preferable. Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol AF, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Nord F novolak resins, resins containing phenolic manufactured hydroxyl and bisphenol A novolac resins.

Examples of the compound having a carboxyl group include an aliphatic acid anhydride, an alicyclic acid anhydride, an aromatic acid anhydride, an aliphatic carboxylic acid, and an aromatic carboxylic acid. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, and polysebacic acid anhydride. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, and glycerol tris trimellitate.

Examples of the aliphatic carboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, Examples include oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, and pimelic acid. Among them, the following formula (1):
_{HOOC- (CH 2) n -COOH (} 1)
(In Formula (1), n is an integer of 1-20.)
Are preferable, and adipic acid, sebacic acid, and dodecanedioic acid are more preferable.

［式中、Ｒ^１〜Ｒ^５は、それぞれ独立して、１価の有機基であり、Ｒ^１〜Ｒ^５の少なくとも一つは水酸基である。］

［式中、Ｒ^６〜Ｒ^２０は、それぞれ独立して、１価の有機基であり、Ｒ^６〜Ｒ^２０の少なくとも一つは水酸基又はカルボキシル基である。］ The structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or (3) is preferable.

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

Examples of the aromatic carboxylic acid include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, merit acid, triylic acid, xylic acid, Hemellitic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6- Dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3, Naphthoic acid derivatives such as 5--2-dihydroxy-2-naphthoic acid; phenolphthaline; diphenolic acid And the like.

  Among the compounds having such a flux function, the compound that acts as a curing agent for the curable resin component, that is, the surface oxide film of the metal foil and the terminal is reduced to such an extent that the metal foil and the terminal can be electrically connected. A compound having a functional group capable of reacting with the curable resin component is more preferable. The functional group can be appropriately selected according to the type of the curable resin component. For example, when the curable resin component is an epoxy resin, it can react with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group. A functional group is mentioned. The compound having such a flux function reduces the surface oxide film of the metal foil when the conductive connection material is melted to increase the wettability of the surface of the metal foil, easily forms the connection portion, and electrically connects the terminals. It becomes possible to do. In addition, after the electrical connection between the terminals is completed, this compound acts as a curing agent and can be added to the curable resin component to increase the elastic modulus or Tg of the resin. Therefore, when a compound having such a flux function is used as the flux, flux cleaning is unnecessary and it is possible to suppress the occurrence of ion migration due to the remaining flux.

Examples of the compound having such a function and having a flux function include compounds having at least one carboxyl group. For example, when the curable resin component is an epoxy resin, examples thereof include aliphatic dicarboxylic acids and compounds having a carboxyl group and a phenolic hydroxyl group.
The aliphatic dicarboxylic acid is not particularly limited, and examples thereof include compounds in which two carboxyl groups are bonded to an aliphatic hydrocarbon group. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

  Examples of such aliphatic dicarboxylic acids include compounds in which n is an integer of 1 to 20 in the formula (1). When n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of bonding, the elastic modulus after curing of the conductive connecting material, and the glass transition temperature becomes good. In particular, n is preferably 3 or more from the viewpoint that the increase in the elastic modulus after curing of the conductive connecting material can be suppressed and the adhesion to the semiconductor wafer or the semiconductor chip can be improved. From the viewpoint that the connection reliability can be further improved, n is preferably 10 or less.

  Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, and pentadecane. Examples include diacid, octadecanedioic acid, nonadecanedioic acid, and eicosanedioic acid. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is particularly preferable.

Examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxybenzoic acid. Benzoic acid derivatives such as acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2- Naphthoic acid derivatives such as naphthoic acid; phenolphthaline; diphenolic acid and the like. Of these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthalin and gentisic acid are particularly preferable.

The compound having a flux function according to the present invention may be used alone or in combination of two or more. In addition, since any compound easily absorbs moisture and causes voids, in the present invention, it is preferable to dry it before use.

In the conductive connection material according to the present invention, the content of the compound having the flux function can be appropriately set according to the form of the resin composition to be used.
For example, when the resin composition is liquid, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, more preferably 3% by weight with respect to the total weight of the curable resin composition. % Or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.
In the case of a solid resin composition, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, more preferably 3% by weight with respect to the total weight of the curable resin composition. % Or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.
When the content of the compound having the flux function is within the above range, the metal foil and the surface oxide film of the terminal can be removed to such an extent that they can be electrically joined. Further, when the resin composition is a curable resin, it can be efficiently added to the resin at the time of curing to increase the elastic modulus or Tg of the resin. Moreover, generation | occurrence | production of the ion migration resulting from the compound which has an unreacted flux function can be suppressed.

  The curable resin composition according to the present invention preferably contains a curing accelerator. By adding a curing accelerator, a curable resin composition having the melt viscosity and the insulation resistance value can be easily obtained.

  Such curing accelerators include imidazole, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2 -Phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino- 6- [ '-Methylimidazolyl (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6 -[2'-ethyl-4-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl (1')]-ethyl-s-triazine isocyanuric Acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-methylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl-5-hy

Among these, from the viewpoint that the solder or tin can move to the surface of the terminals before the curing of the curable resin composition is completed and the terminals can be connected well, an imidazole compound having a melting point of 150 ° C. or higher is used. preferable. Examples of imidazole having a melting point of 150 ° C. or higher include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 2,4-diamino-6- [2′-methylimidazolyl]. (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2 ′ -Ethyl-4-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl (1')]-ethyl-s-triazine isocyanuric acid adduct, Isocyanuric acid adduct of 2-phenylimidazole, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl-5-hydroxy Such as methylimidazole. Moreover, in this invention, such a hardening accelerator may be used individually by 1 type, or may use 2 or more types together.

In the conductive connection material according to the present invention, the content of the curing accelerator can be appropriately set according to the type of the curing accelerator to be used.
For example, when an imidazole compound is used, the content of the imidazole compound is preferably 0.001% by weight or more, more preferably 0.003% by weight or more, based on the total weight of the curable resin composition. 0.005% by weight or more is particularly preferable. Moreover, 1.0 weight% or less is preferable, 0.7 weight% or less is more preferable, and 0.5 weight% or less is especially preferable. When the content of the imidazole compound is less than the lower limit, the effect as a curing accelerator is not sufficiently exhibited, and the curable resin composition may not be sufficiently cured. On the other hand, when the content of the imidazole compound exceeds the above upper limit, the solder or tin does not move sufficiently to the terminal surface before the curing of the curable resin composition is completed, and the solder or tin remains in the insulating region and is insulative. May not be sufficient. In addition, the storage stability of the conductive connection material may be reduced.

(Iv) Other additives The curable resin composition according to the present invention includes a curing agent (excluding those acting as a flux), a silane coupling agent, a plasticizer, a stabilizer, a tackifier, a lubricant, and an antioxidant. An additive such as an agent, an inorganic filler, a filler, an antistatic agent and a pigment may be further contained.

  Examples of the curing agent other than the compound having a flux function include phenols, amines, and thiols. Such a hardening | curing agent can be suitably selected according to the kind etc. of curable resin component. For example, when an epoxy resin is used as the curable resin component, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (eg, heat resistance, moisture resistance, etc.) are obtained. In view of the above, it is preferable to use a phenol as a curing agent, and a bifunctional or higher functional phenol is more preferable in terms of excellent physical properties after curing of the curable resin component. Moreover, such a hardening | curing agent may be used individually by 1 type, and may use 2 or more types together.

  Examples of such phenols include bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolac resin, cresol novolac resin, and the like. Of these, phenol novolac resins and cresol novolac resins are preferred because they have good melt viscosity and reactivity with epoxy resins and are excellent in physical properties after curing.

In the conductive connection material according to the present invention, the compounding amount of the curing agent is such that the type of the curable resin component and the curing agent to be used, and the compound having a flux function have a functional group that functions as a curing agent. Can be appropriately selected depending on the type and amount of use. For example, when a phenol novolac resin is used, its blending amount is preferably 1% by weight or more, more preferably 3% by weight or more, more preferably 5% by weight with respect to the total weight of the curable resin composition. % Or more, particularly preferably 50% by weight or less, more preferably 40% by weight or less, and particularly preferably 30% by weight or less. When the amount of the phenol novolac resin is less than the lower limit, the curable resin component tends not to be cured sufficiently, and when the amount exceeds the upper limit, the unreacted phenol novolac resin remains and the ion migration tends to occur. is there.

  Further, when an epoxy resin is used as the curable resin component, the blending amount of the phenol novolac resin may be defined by an equivalent ratio with respect to the epoxy resin. For example, the equivalent ratio of phenol novolac resin to epoxy resin is preferably 0.5 to 1.2, more preferably 0.6 to 1.1, and 0.7 to 0.98. Particularly preferred. When the equivalent ratio is less than the lower limit, the heat resistance and moisture resistance after curing of the epoxy resin tend to decrease, and when the upper limit is exceeded, unreacted phenol novolac resin remains and ion migration occurs. It tends to be easy to do.

  Examples of the silane coupling agent include an epoxy silane coupling agent and an aromatic-containing aminosilane coupling agent. By adding such a silane coupling agent, the adhesion between the semiconductor wafer or semiconductor chip and the conductive connecting material can be enhanced. Moreover, such a silane coupling agent may be used individually by 1 type, and may use 2 or more types together.

  In the conductive connecting material according to the present invention, the blending amount of the silane coupling agent can be appropriately selected according to the type of the interface of the semiconductor wafer or the semiconductor chip, the curable resin component, etc., for example, the curable resin composition The total weight of the product is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, particularly preferably 0.1% by weight or more, and 2% by weight. % Or less, more preferably 1.5% by weight or less, and particularly preferably 1% by weight or less.

  In the present invention, the curable resin composition can be prepared by mixing and dispersing the above components. The mixing method and dispersion method of each component are not specifically limited, It can mix and disperse | distribute by a conventionally well-known method.

  In the present invention, a liquid curable resin composition may be prepared by mixing the above components in a solvent or without a solvent. The solvent used at this time is not particularly limited as long as it is inert to each component. For example, acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), diisobutyl ketone (DIBK), cyclohexanone, Ketones such as diacetone alcohol (DAA); aromatic hydrocarbons such as benzene, xylene and toluene; alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol; methyl cellosolve, ethyl cellosolve, butyl cellosolve; Cellosolves such as methyl cellosolve acetate and ethyl cellosolve acetate, N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), dimethylformamide (DMF), dibasic acid ester (DB ), Ethyl 3-ethoxypropionate (EEP), and dimethyl carbonate (DMC). Moreover, it is preferable that the usage-amount of a solvent is an quantity from which the solid content concentration of the component mixed with the solvent will be 10 to 80 weight%.

(B) Thermoplastic resin composition In this invention, a thermoplastic resin composition can also be used as a resin composition.
The thermoplastic resin composition used in the present invention is not particularly limited as long as it contains a thermoplastic resin component and a compound having a flux function and softens at a predetermined temperature.

(I) Thermoplastic resin component The thermoplastic resin component is not particularly limited. For example, vinyl acetate, polyvinyl alcohol resin, polyvinyl butyral resin, vinyl chloride resin, (meth) acrylic resin, phenoxy resin, polyester resin, Polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, acrylic resin, styrene resin, polyethylene resin, polypropylene resin, polyamide resin, cellulose resin, isobutylene resin, vinyl ether resin, liquid crystal polymer resin, polyphenylene sulfide resin, polyphenylene ether resin , Polyethersulfone resin, polyetherimide resin, polyetheretherketone resin, polyurethane resin, styrene-butadiene-styrene copolymer, styrene -Ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer And coalesced and polyvinyl acetate. The thermoplastic resin component may be a single polymer or a copolymer of at least two of the thermoplastic resin components.

The softening point of the thermoplastic resin component is not particularly limited, but is preferably 10 ° C. or more lower than the melting point of the metal foil constituting the conductive connection material, particularly preferably 20 ° C. or more, and more preferably 30 ° C. or less. It is more preferable.
The decomposition temperature of the thermoplastic resin component is not particularly limited, but is preferably 10 ° C. or higher, particularly preferably 20 ° C. or higher, more preferably 30 ° C. higher than the melting point of the metal foil constituting the conductive connecting material. More preferably, it is higher.

Content of the said thermoplastic resin can be suitably set according to the form of the thermoplastic resin composition to be used.
For example, when the thermoplastic resin composition is liquid, the content of the thermoplastic resin component is preferably 10% by weight or more, more preferably 15% by weight or more, and more preferably 20% by weight with respect to the total weight of the thermoplastic resin composition. % Or more is more preferable, 25% by weight or more is further more preferable, 30% by weight or more is still more preferable, and 35% by weight or more is particularly preferable. Moreover, 100 weight% or less is preferable, 95 weight% or less is more preferable, 90 weight% or less is more preferable, 75 weight% or less is still more preferable, 65 weight% or less is still more preferable, 55 weight% or less is especially preferable.
When the thermoplastic resin composition is solid, the content of the thermoplastic resin component is preferably 5% by weight or more, more preferably 10% by weight or more, and more preferably 15% by weight with respect to the total weight of the thermoplastic resin composition. % Or more is more preferable, and 20% by weight or more is particularly preferable. Moreover, 90 weight% or less is preferable, 85 weight% or less is more preferable, 80 weight% or less is further more preferable, 75 weight% or less is still more preferable, 65 weight% or less is still more preferable, 55 weight% or less is especially preferable.
When the content of the thermoplastic resin component is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals can be sufficiently ensured.

(Ii) Compound having flux function The compound having the flux function may be the same as described in the above “(a) curable resin composition”. The same applies to preferred compounds and blending amounts.

(Iii) Other additives In addition to the above thermoplastic resin components, silane coupling agents, plasticizers, stabilizers, tackifiers, lubricants, antioxidants, and inorganic fillers as long as the effects of the present invention are not impaired. Further, a filler, an antistatic agent, a pigment, and the like may be blended.

In the conductive connection material according to the present invention, the thickness of the resin composition layer is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, and particularly preferably 5 μm or more. The thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, and particularly preferably 100 μm or less. When the thickness of the resin composition layer is within the above range, the gap between adjacent terminals can be sufficiently filled with the resin composition, and the mechanical adhesive strength and the opposing terminals after the resin composition is cured or solidified. A sufficient electrical connection can be ensured.

  When the conductive connection material of the present invention includes a plurality of resin composition layers, the composition of each resin composition layer may be the same, or may differ depending on the type of resin component used, the difference in formulation, and the like. The physical properties such as melt viscosity and softening temperature of the resin composition layer may be the same or different. For example, a liquid resin composition layer and a solid resin composition layer may be used in combination.

(2) Metal foil layer In this invention, a metal foil layer is a layer comprised with the metal foil chosen from solder foil or tin foil. The metal foil layer should just be formed in at least one part of the resin composition layer by planar view, and may be formed in the whole surface of the resin composition layer.

  The shape of the metal foil layer is not particularly limited, and a certain shape may be repeatedly formed in a pattern shape, or the shape may be irregular. Regular shapes and irregular shapes may be mixed. As the shape of the metal foil layer, for example, a dotted pattern (a), a striped pattern (b), a polka dot pattern (c), a rectangular pattern (d), a checkered pattern (e), a frame shape ( f), lattice pattern (g), multiple frame shapes (h), and the like. These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  In one embodiment of the present invention, when connecting a full grid type adherend in which terminals to be connected are arranged on the entire connection surface of a semiconductor wafer and a semiconductor chip, a sheet-like shape is formed on the entire surface of the resin composition. It is preferable to form a metal foil.

  In addition, when connecting a peripheral type adherend such that a terminal to be connected is disposed at the periphery of the connection surface of the semiconductor wafer and the semiconductor chip, a viewpoint of effectively using the metal foil, and an adjacent terminal From the viewpoint of not leaving the metal foil in between, it is preferable to repeatedly form a patterned metal foil on at least a part of the resin composition. At this time, the shape of the metal foil can be appropriately selected depending on the pitch and form of the terminals.

  The metal foil used in the present invention is not particularly limited, and tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), aluminum (Al), gold (Au), germanium (Ge), an alloy of at least two metals selected from the group consisting of copper (Cu), or a simple tin Is preferred.

Among these alloys, in consideration of melting temperature and mechanical properties, Sn—Pb alloy, Sn—Bi alloy which is lead-free solder, Sn—Ag—Cu alloy, Sn—In alloy, Sn— More preferably, it is made of an alloy containing Sn, such as an alloy of Ag. In the case of an Sn-Pb alloy, the tin content is preferably 30% by weight or more and less than 100% by weight, more preferably 35% by weight or more and less than 100% by weight, and particularly preferably 40% by weight or more. . Moreover, it is preferable that it is less than 100 weight%. In the case of lead-free solder, the tin content is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, and more preferably 25% by weight or more and less than 100% by weight. It is particularly preferred that it is less than. For example, Sn-Pb alloy is Sn63-Pb (melting point 183 ° C), and lead-free solder is Sn-3.0Ag-0.5Cu (melting point 217 ° C), Sn-3.5Ag (melting point 221 ° C) Sn-58Bi (melting point 139 ° C.), Sn-9.0Zn (melting point 199 ° C.), Sn-3.5Ag-0.5Bi-3.0In (melting point 193 ° C.), Au-20Sn (melting point 2
80 ° C.).

  In the present invention, a metal foil having a desired melting point and composition can be used as appropriate according to the heat resistance of the semiconductor wafer or semiconductor chip to be connected. For example, a metal having a melting point of 330 ° C. or lower (more preferably 300 ° C. or lower, particularly preferably 280 ° C. or lower, more preferably 260 ° C. or lower) in order to prevent the semiconductor wafer or the semiconductor chip from being damaged by the thermal history. It is preferable to use a foil. In addition, melting | fusing point of metal foil can be measured with a differential scanning calorimeter (DSC).

  The thickness of the metal foil can be appropriately selected according to the gap between the semiconductor wafer and the semiconductor chip facing each other, the separation distance between adjacent terminals, etc. For example, the thickness of the metal foil is 0.5 μm or more. It is preferably 3 μm or more, more preferably 5 μm or more, more preferably 100 μm or less, even more preferably 50 μm or less, and particularly preferably 20 μm or less. When the thickness of the metal foil is less than the lower limit, the number of unconnected terminals tends to increase due to insufficient metal foil.On the other hand, when the upper limit is exceeded, bridging occurs between adjacent terminals due to surplus metal foil, which tends to cause short circuit. is there.

  The method for producing the metal foil is not particularly limited, and examples thereof include a method for producing from a lump such as an ingot by rolling, a method for forming a metal foil layer by direct vapor deposition, sputtering, plating, etc. on the resin composition layer. In addition, there is no particular limitation on a method for producing a metal foil having a repetitive pattern. However, a method of punching a metal foil into a predetermined pattern, a method of forming a predetermined pattern by etching, or a shielding plate or a mask is used. The method of forming by vapor deposition, sputtering, plating, etc. is mentioned.

  The content of the metal foil is preferably 5% by weight or more, more preferably 20% by weight or more, and particularly preferably 30% by weight or more with respect to the total weight of the conductive connecting material. Moreover, less than 100 weight% is preferable, 80 weight% or less is more preferable, and 70 weight% or less is especially preferable. If the content of the metal foil is less than the above lower limit, unconnected terminals may increase due to insufficient solder or tin. On the other hand, if the content of the metal foil exceeds the above upper limit, bridging is likely to occur between adjacent terminals due to excessive solder or tin.

  Or you may define the compounding quantity of metal foil by the volume ratio with respect to a conductive connection material. For example, the blending amount of the metal foil is preferably 1% by volume or more, more preferably 5% by volume or more, and particularly preferably 10% by volume or more with respect to the conductive connection material. Moreover, it is preferable that it is 90 volume% or less, It is more preferable that it is 80 volume% or less, It is especially preferable that it is 70 volume% or less. When the blending amount of the metal foil is less than the lower limit, unconnected terminals tend to increase due to insufficient metal foil. On the other hand, when the upper limit is exceeded, there is a tendency that bridging is likely to occur between adjacent terminals due to excess metal foil.

(3) Form of conductive connection material In the present invention, the form of the conductive connection material can be appropriately selected according to the form of the resin composition. For example, when the resin composition is liquid, the resin composition is applied on both sides of a metal foil, or the resin composition is applied on a release substrate such as a polyester sheet, and semi-cured at a predetermined temperature (B-stage) For example, a film obtained by drying and forming a film and pasting metal foils together to form a film can be used as the conductive connection material. When the resin composition is in a solid state, a varnish of the resin composition dissolved in an organic solvent is applied onto a release substrate such as a polyester sheet and dried at a predetermined temperature, and then a metal foil is laminated or vapor deposited. A film formed using the above method can be used as a conductive connection material.

  In addition, the conductive connection material of the present invention and the metal foil used therefor can be embossed to improve contact with the terminal.

  The thickness of the conductive connecting material of the present invention is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, particularly preferably 5 μm or more, and preferably 200 μm or less. 150 μm or less is more preferable, and 100 μm or less is particularly preferable. When the thickness of the conductive connecting material is within the above range, the resin composition can be sufficiently filled in the gap between adjacent terminals. In addition, the mechanical adhesive strength after the resin component is cured or solidified and the electrical connection between the opposing terminals can be sufficiently ensured.

Next, a method for manufacturing the conductive connection material will be described.
When the resin composition used in the present invention is liquid at 25 ° C., for example, the metal foil is dipped in the liquid resin composition, and the liquid resin composition is adhered to both surfaces of the metal foil, so that the conductive connection of the present invention is performed. The material can be manufactured. When the thickness of the resin composition needs to be controlled, it is prepared by a method in which a metal foil immersed in a liquid resin composition is passed through a bar coater having a certain gap or a method in which a liquid resin composition is sprayed with a spray coater or the like. can do.

  Moreover, when a resin composition is a film form at 25 degreeC, a conductive connection material can be manufactured as follows, for example. First, a varnish of a resin composition dissolved in an organic solvent is applied on a release substrate such as a polyester sheet, dried at a predetermined temperature to form a film, and a film-like resin composition is produced. Next, two resin compositions formed on the release substrate were prepared, and the resin composition was placed on top and bottom of the metal foil by laminating with a hot roll with the metal foil sandwiched between the resin composition / metal. A three-layer conductive connecting material made of a foil / resin composition can be produced. In addition, a two-layer conductive connecting material composed of a resin composition / metal foil can be produced by arranging the resin composition on one side of the metal foil by the above-described laminating method.

  When using a wound metal foil, the film-shaped resin composition is laminated on the upper and lower sides or one side of the metal foil with a hot roll, using the metal foil as a base substrate, so that a wound conductive film is used. A connection material can also be obtained. Furthermore, when using a wound metal foil, it is possible to produce a wound conductive connecting material by directly applying a varnish-like resin composition to the upper or lower side or one side of the metal foil and volatilizing the solvent. it can.

When producing conductive connection materials using patterned metal foil, for example, place metal foil on the release substrate, half-cut the metal foil with a mold from the metal foil side, and remove excess metal foil. By removing, a patterned metal foil is produced, and the film-like resin composition may be laminated with a hot roll. When the resin composition is provided on both surfaces of the patterned metal foil, the release substrate is peeled off, and the film-shaped resin composition is formed on the surface of the patterned metal foil opposite to the surface on which the resin composition is formed. What is necessary is just to laminate the thing further.
In addition, the manufacturing method of a conductive connection material is not restrict | limited to the said method. The manufacturing method of the conductive connection material can be appropriately selected by those skilled in the art according to the purpose and application.

  [1A-3] Next, as shown in FIG. 3C, the first semiconductor wafer 210 in which the conductive connection material 60 is provided on the functional surface 211 side having the first connection terminals, and the second connection The semiconductor wafer 210 and the first semiconductor chip 220 are arranged so that the functional surface 211 and the functional surface 221 face the first semiconductor chip 220 having terminals. That is, the semiconductor wafer 210 and the first semiconductor chip 220 are disposed in a state where the conductive connection material 60 is interposed between the functional surface 211 and the functional surface 221.

Then, the first terminal (not shown) on the functional surface 211 side and the second terminal (not shown) on the functional surface 221 side are positioned so as to correspond to each other as shown in FIG. A semiconductor wafer / first semiconductor chip stack in which the semiconductor wafer 210 and the first semiconductor chip 220 are stacked by overlapping the semiconductor wafer 210 and the first semiconductor chip 220 with the conductive connection material 60 interposed therebetween. 240 is formed (second step).

  [1A-4] Next, as shown in FIG. 3D, the semiconductor wafer / first semiconductor chip stack 240 is heated (third step).

The heating temperature is preferably 5 ° C. or more higher than the melting point of the metal foil, more preferably 10 ° C. or more, more preferably 20 ° C. or more, and particularly preferably 30 ° C. or more.
Specifically, the heating temperature varies depending on the constituent material of the metal foil and the constituent material of the conductive connecting material 60, but is preferably about 100 to 260 ° C., more preferably about 130 to 250 ° C. preferable.

  The semiconductor wafer / semiconductor chip stack 240 may be heated at a predetermined single temperature, for example, step cure by heating at 180 ° C. for 100 seconds and then heating at 250 ° C. for 100 seconds, or 180 ° C. After 10 seconds of thermocompression bonding, post-curing may be performed by oven-curing at 240 ° C. for 10 minutes. As a result, the metal foil and the connection portions 212 and 222 can be reliably electrically connected by metal bonding, and the conductive portion 225 having low connection resistance and high connection reliability can be formed.

Further, by controlling the semiconductor wafer / first semiconductor chip stack 240 while heating the semiconductor wafer / first semiconductor chip stack 240 so that the gap in the thickness direction becomes constant, the metal foil is made to be the first terminal and the first of the semiconductor wafer. The semiconductor chip can be more efficiently aggregated by bringing it into contact with the surface of the second terminal of the semiconductor chip.
A method for performing the control such that the gap is constant is not particularly limited, and can be performed by using a flip chip bonder or the like.

  Thereby, metal foil can be melted. As a result, the molten metal foil moves through the conductive connection material 60 and aggregates in a self-aligned manner on the surfaces of the first terminal and the second terminal. Thereafter, the aggregated aggregate is solidified, and the first terminal and the second terminal can be electrically connected by the conductive portion 225 configured by the solidified aggregate.

  Further, the curing or solidification of the resin composition is completed after the melting of the metal foil, so that the melt of the metal foil between the semiconductor wafer 210 and the first semiconductor chip 220 is in a region other than the region where the melt is agglomerated. Insulating portion 226 made of a cured or solidified resin composition can be formed, adjacent conductive portions 225 can be reliably insulated, and semiconductor wafer 210 and first semiconductor chip 220 can be insulated. Can be securely bonded.

  When the resin composition is a curable resin composition, the curing of the curable resin composition can be appropriately set according to the composition of the curable resin composition, but at least 5 ° C. from the heating temperature in the heating step. A low temperature is preferred, and a temperature at least 10 ° C. is particularly preferred. Specifically, it is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, particularly preferably 130 ° C. or higher, and most preferably 150 ° C. or higher. Further, it is preferably 300 ° C. or lower, more preferably 260 ° C. or lower, particularly preferably 250 ° C. or lower, and most preferably 240 ° C. or lower. When the curing temperature is within the above range, the conductive connecting material is not thermally decomposed, and the curable resin composition can be sufficiently cured.

  Moreover, when the resin composition is a thermoplastic resin composition, the solidification of the thermoplastic resin composition can be appropriately set according to the composition of the thermoplastic resin composition, but it is higher than the heating temperature in the heating step. It is preferably at least 10 ° C. or lower, particularly preferably 20 ° C. or higher. The coagulation temperature of the thermoplastic resin composition is preferably 50 ° C. or higher, particularly preferably 60 ° C. or higher, and further preferably 100 ° C. or higher. When the solidification temperature of the thermoplastic resin composition is within the above range, the conductive portion 225 can be reliably formed, and the insulating portion 226 can have a desired heat resistance. For this reason, the insulation between adjacent terminals is ensured, and a short circuit between adjacent terminals can be more reliably prevented.

  After the molten metal foil is aggregated as described above, the aggregated aggregate is solidified, and then the resin composition is cured or solidified. As a result, the semiconductor wafer 210 and the first semiconductor chip 220 are fixed via the conductive connection material 60 ′, and the conductive portion 225 composed of the solidified product of the aggregated aggregated molten metal foils causes the semiconductor to A semiconductor wafer / first semiconductor chip assembly 250 in which the first terminal of the wafer and the second terminal of the first semiconductor chip are electrically connected can be formed.

  Here, in the present invention, the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip are electrically connected via a solidified material such as the conductive portion 225. Therefore, even when the insulating part 226 made of the resin composition expands due to heat generation of the semiconductor chip 20 when driving the electronic component 10 described later, this electrical connection is preferably prevented from being disconnected. Therefore, stable conduction can be obtained between the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip. That is, electrical connection with excellent connection reliability can be obtained between the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip.

  The thickness of the conductive portion 225, that is, the thickness (average) of the conductive connection material 60 ′ in the semiconductor wafer / first semiconductor chip assembly 250 is not particularly limited, but is the same as in the first manufacturing method. Is preferred. Thus, by reducing the distance between the semiconductor wafer 210 and the first semiconductor chip 220, the semiconductor chip 20 (two stacked bodies) obtained by separating the semiconductor wafer / first semiconductor chip assembly 250 into pieces. ) Can be made thinner.

  In other words, the integration density of the semiconductor chips 20 that can be mounted in one electronic component 10 can be increased, and the entire electronic component 10 can be reduced in size. In addition, since the distance between the first terminal and the second terminal provided on each of the functional surface 211 and the functional surface 221 can be reduced, signal speed can be increased.

<Second production method>
Next, a method for obtaining a semiconductor wafer / first semiconductor chip assembly 270 using the second method for manufacturing a semiconductor device will be described with reference to FIG.

  [1B-1] First, as shown in FIG. 4A, a semiconductor wafer 210 having a connection part 212 formed with a plurality of individual circuits (not shown) and a first semiconductor chip having a connection part 222, respectively. 220 are prepared (first step).

  In this embodiment, as shown in FIG. 4A, the semiconductor wafer 210 and the first semiconductor chip 220 are connected to the connection portions 212 and 222 provided on the functional surface 211 and the back surface 223, respectively. One terminal (not shown) and a second terminal (not shown) are provided.

[1B-2] Next, as shown in FIG. 4B, the functional surface 211 of the semiconductor wafer 210.
Then, a conductive connection material 60 having a laminated structure composed of a resin composition 61 and a metal foil 62 selected from solder foil or tin foil is formed.

  The method for forming the conductive connection material 60 on the functional surface 211 is not particularly limited, and examples thereof include a laminating method and a thermocompression bonding method. However, air bubbles are involved in the interface between the semiconductor wafer 210 and the conductive connection material 60. The method is preferable for vacuum lamination that can prevent the above.

  In the present embodiment, the conductive connection material 60 is provided alone on the functional surface 211 side of the semiconductor wafer 210, but may be provided alone on the back surface 223 side of the first semiconductor chip 220. You may make it provide in both the functional surface 211 side of the semiconductor wafer 210, and the back surface 223 side of the 1st semiconductor chip 220. FIG. From the viewpoint of simplifying the process in the method of manufacturing a semiconductor device, it is preferable to provide the conductive connection material 60 on one of the functional surface 211 and the back surface 223, and the semiconductor wafer / first formed From the viewpoint of improving the adhesion of the semiconductor chip bonded body 270, it is preferable to provide the conductive connection material 60 on both the functional surface 211 and the back surface 223.

  Here, the conductive connection material 60 may be the same as the conductive connection material 60 used in the first manufacturing method, and the conductive connection material 60 may be the semiconductor wafer 210 or the first semiconductor chip. A similar method can be used for forming the layer 220.

  [1B-3] Next, as shown in FIG. 4C, the first semiconductor wafer 210 in which the conductive connection material 60 is provided on the functional surface 211 side having the first connection terminals, and the back surface 223 side. The semiconductor wafer 210 and the first semiconductor chip 220 are arranged so that the functional surface 211 and the back surface 223 face the first semiconductor chip 220 having the second connection terminal. That is, the semiconductor wafer 210 and the first semiconductor chip 220 are disposed in a state where the conductive connection material 60 is interposed between the functional surface 211 and the back surface 223.

  Then, the first terminal (not shown) on the functional surface 211 side and the second terminal (not shown) on the back surface 223 side are positioned so as to correspond, as shown in FIG. A semiconductor wafer / first semiconductor chip stacked body 260 in which the semiconductor wafer 210 and the first semiconductor chip 220 are stacked by overlapping the semiconductor wafer 210 and the first semiconductor chip 220 via the conductive connection material 60. Is formed (second step).

  [1B-4] Next, as shown in FIG. 4D, the semiconductor wafer / first semiconductor chip stack 260 is heated (third step).

  At this time, it is preferable to gradually heat the resin composition so as to be cured or solidified after the melting of the metal foil. Here, the said heating temperature can be performed on the conditions similar to a 1st manufacturing method.

In addition, by controlling the semiconductor wafer / first semiconductor chip stack 260 so that the gap in the thickness direction is constant while heating the metal foil, the metal foil is connected to the first terminal and the first of the semiconductor wafer. The semiconductor chip can be more efficiently aggregated by bringing it into contact with the surface of the second terminal of the semiconductor chip.
A method for performing the control such that the gap is constant is not particularly limited, and can be performed by using a flip chip bonder or the like.

Thereby, metal foil can be melted. As a result, the molten metal foil moves through the conductive connection material 60 and aggregates in a self-aligned manner on the surfaces of the first terminal and the second terminal. Thereafter, the aggregated aggregate is solidified, and the first terminal and the second terminal can be electrically connected by the conductive portion 225 configured by the solidified aggregate.

  Further, the curing or solidification of the resin composition is completed after the melting of the metal foil, so that the melt of the metal foil between the semiconductor wafer 210 and the first semiconductor chip 220 is in a region other than the region where the melt is agglomerated. The insulating part 226 made of a cured product or a solidified product of the resin composition can be formed, the adjacent conductive parts 225 can be reliably electrically insulated, and the semiconductor wafer 210 and the first The semiconductor chip 220 can be reliably bonded.

  After the molten metal foil is aggregated as described above, the aggregated aggregate is solidified, and then the resin composition is cured or solidified. As a result, the semiconductor wafer 210 and the first semiconductor chip 220 are fixed via the conductive connection material 60 ′, and the conductive portion 225 composed of the solidified product of the aggregated aggregated molten metal foils causes the semiconductor to A semiconductor wafer / first semiconductor chip assembly 270 in which the first terminal of the wafer and the first terminal of the first semiconductor chip are electrically connected can be formed.

  Here, in the present invention, the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip are electrically connected via a solidified material such as the conductive portion 225. Therefore, when the electronic component 90 described later is driven, even if the insulating part 226 made of the resin composition expands due to heat generated by the semiconductor chip 30 (two stacked bodies), this electrical connection is disconnected. Can be suitably prevented, and stable conduction can be obtained between the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip. That is, electrical connection with excellent connection reliability can be obtained between the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip.

  The thickness of the conductive portion 225, that is, the thickness (average) of the conductive connection material 60 'in the semiconductor wafer / first semiconductor chip assembly 270 is not particularly limited, but is the same as in the first manufacturing method. Is preferred. Thus, by reducing the distance between the semiconductor wafer 210 and the first semiconductor chip 220, the semiconductor chip 30 (two stacked bodies) obtained by separating the semiconductor wafer / first semiconductor chip assembly 270 into pieces. ) Can be made thinner.

  In other words, the integration density of the semiconductor chips 30 that can be mounted in one electronic component 90 can be increased, and the entire electronic component 90 can be reduced in size. In addition, since the distance between the first terminal and the second terminal provided on each of the functional surface 211 and the back surface 223 can be reduced, signal speed can be increased.

<Third production method>
Next, a method for obtaining the semiconductor wafer / first semiconductor chip / second semiconductor chip assembly 290 using the third manufacturing method of the semiconductor device will be described with reference to FIG.

  [1C-1] First, as shown in FIG. 5A, each of a bonded body 270 of a semiconductor wafer 210 / first semiconductor chip 220 having a connection portion 222 formed with a plurality of individual circuits (not shown), and Then, a second semiconductor chip 230 having a connection portion 232 is prepared (first step).

  In the present embodiment, as shown in FIG. 5A, the bonded body 270 of the semiconductor wafer 210 / first semiconductor chip 220 and the second semiconductor chip 230 are provided on the functional surface 221 and the back surface 233 thereof. A plurality of third terminals (not shown) and a fourth terminal (not shown) connected to the individual circuit are provided.

  [1C-2] Next, as shown in FIG. 5B, a laminated structure including a resin composition 61 and a metal foil 62 selected from solder foil or tin foil on the back surface 233 of the second semiconductor chip. The conductive connection material 60 having the following is formed.

  The method for forming the conductive connection material 60 on the back surface 233 is not particularly limited, and examples thereof include a laminating method and a thermocompression bonding method. However, air bubbles are generated at the interface between the second semiconductor chip 230 and the conductive connection material 60. A method is preferred for vacuum laminating that can prevent entrainment.

  In this embodiment, the conductive connection material 60 is provided alone on the back surface 233 side of the second semiconductor chip 230, but may be provided separately on the functional surface 221 side of the first semiconductor chip 220. Alternatively, it may be provided on both the back surface 233 side of the second semiconductor chip 230 and the functional surface 221 side of the first semiconductor chip 220. From the viewpoint of simplifying the process in the method of manufacturing a semiconductor device, it is preferable to provide the conductive connection material 60 on one of the functional surface 221 and the back surface 233, and the semiconductor wafer / first formed From the viewpoint of improving the adhesion of the semiconductor chip / second semiconductor chip assembly 290, it is preferable to provide the conductive connection material 60 on both the back surface 233 and the functional surface 221.

  Here, the conductive connection material 60 may be the same as the conductive connection material 60 used in the first manufacturing method, and the conductive connection material 60 may be the second semiconductor chip 230 or the first semiconductor device. The same method can be used for forming the semiconductor chip 220.

  [1C-3] Next, as shown in FIG. 5C, the second semiconductor chip 230 provided with the conductive connection material on the back surface 233 side, the first semiconductor chip 220, the back surface 233, and the function The second semiconductor chip 230 and the semiconductor wafer / first semiconductor chip assembly 270 are arranged so that the surface 221 faces each other. That is, the second semiconductor chip 230 and the semiconductor wafer / first semiconductor chip assembly 270 are disposed in a state where the conductive connection material 60 is interposed between the functional surface 221 and the back surface 233.

  And it positions so that the 3rd terminal in the functional surface 221 side and the 4th terminal in the back surface 233 side may correspond, and as shown in FIG.5 (c), it is 1st via the conductive connection material 60. The semiconductor wafer / second semiconductor chip 230 and the semiconductor wafer / first semiconductor chip assembly 270 are superposed on each other to superimpose the second semiconductor chip 230 and the semiconductor wafer / first semiconductor chip assembly 270. A first semiconductor chip / second semiconductor chip stack 280 is formed (second step).

  [1C-4] Next, as shown in FIG. 5D, the semiconductor wafer / first semiconductor chip / second semiconductor chip stacked body 280 is heated (third step).

  At this time, it is preferable to gradually heat the resin composition so as to be cured or solidified after the melting of the metal foil. Here, the said heating temperature can be performed on the conditions similar to a 1st manufacturing method.

Further, by heating the semiconductor wafer / first semiconductor chip / second semiconductor chip stack 280 and controlling the gap in the thickness direction to be constant, the metal foil is made to be the first semiconductor. By contacting the surfaces of the third terminal of the chip and the fourth terminal of the second semiconductor chip, they can be more efficiently aggregated.
A method for performing the control such that the gap is constant is not particularly limited, and can be performed by using a flip chip bonder or the like.

Thereby, metal foil can be melted. As a result, the molten metal foil moves through the conductive connection material 60 and aggregates in a self-aligned manner on the surfaces of the third terminal and the fourth terminal. Thereafter, the aggregated aggregate is solidified, and the third terminal and the fourth terminal can be electrically connected by the conductive portion 235 formed of the solidified aggregate.

  In addition, a region other than the region where the melt of the metal foil between the first semiconductor chip 220 and the second semiconductor chip 230 agglomerates due to the completion of the curing or solidification of the resin composition after the melting of the metal foil. The insulating portion 236 made of a cured product or a solidified product of the resin composition can be formed in the region, and the adjacent conductive portions 235 can be reliably electrically insulated from each other, and the first semiconductor The chip 220 and the second semiconductor chip 230 can be reliably bonded.

  After the molten metal foil is aggregated as described above, the aggregated aggregate is solidified, and then the resin composition is cured or solidified. As a result, the first semiconductor chip 220 and the second semiconductor chip 230 are fixed via the conductive connection material 60 ′, and the conductive portion 235 is formed of a solidified product of aggregated aggregated molten metal foil. Thus, a semiconductor wafer / first semiconductor chip / second semiconductor chip assembly 290 in which the third terminal of the first semiconductor chip and the fourth terminal of the second semiconductor chip are electrically connected is formed. can do.

  Here, in the present invention, the terminals of the semiconductor wafer, the terminals of the first semiconductor chip, and the second semiconductor chip are electrically connected via the solidified material such as the conductive portions 225 and 235. Therefore, even if the insulating portions 226 and 236 made of the resin composition expand due to heat generation of the semiconductor chip 30 ′ (three stacked bodies), this electrical connection is preferably prevented from being disconnected. Therefore, stable conduction can be obtained among the semiconductor wafer, the first semiconductor chip, and the second semiconductor chip. That is, electrical connection with excellent connection reliability can be obtained among the semiconductor wafer, the first semiconductor chip, and the second semiconductor chip.

  The thickness of the conductive portion 225, that is, the thickness (average) of the conductive connection material 60 ′ in the semiconductor wafer / first semiconductor chip / second semiconductor chip assembly 290 is not particularly limited. The method is preferably the same. In this way, the semiconductor wafer / first semiconductor chip assembly / second semiconductor chip assembly 290 is separated into pieces by reducing the distance between the first semiconductor chip 220 and the second semiconductor chip 230. Thus, the thickness of the semiconductor chip 30 ′ (two stacked bodies) obtained can be reduced.

  In other words, the integration density of the semiconductor chip 30 ′ that can be mounted in one electronic component can be increased, and the entire electronic component can be reduced in size. In addition, since the distance between the third terminal and the fourth terminal provided on each of the functional surface 221 and the back surface 233 can be reduced, signal speed can be increased.

  Here, in the first and second manufacturing methods, an embodiment is described in which one semiconductor chip is stacked on a semiconductor wafer, and in the third manufacturing method, two semiconductor chips are stacked on a semiconductor wafer. Without being limited thereto, the semiconductor chips may be stacked in three or more stages.

  Moreover, in the 1st-3rd manufacturing method, although lamination | stacking of functional surfaces or lamination | stacking of a functional surface and a back surface was described, you may laminate | stack the back surfaces, without being limited to this.

[2] Next, as shown in FIG. 3E, FIG. 4E, and FIG. 5E, the individual formed on the semiconductor wafer 210, the first semiconductor chip 220, and the second semiconductor chip 230, respectively. The semiconductor wafer / first semiconductor chip assembly 250, 270 or the semiconductor wafer / first semiconductor chip assembly / second semiconductor chip assembly 290 is separated into a plurality of pieces so as to correspond to the circuit. Semiconductor chip (laminated body) 20, 30, 30 ′
Get.

  As described above, the semiconductor wafer / first semiconductor chip assembly 250, 270 or the semiconductor wafer / first semiconductor chip / second semiconductor chip assembly 290 formed by the method for manufacturing a semiconductor device of the present invention is separated. To obtain a plurality of semiconductor chips (laminated bodies) 20, 30, 30 ′ in a lump, thereby stacking and joining the semiconductor chips and the semiconductor wafers as described in the prior art. Compared with the case of singulation, stable electrical connection between the semiconductor chips can be obtained, and only good products can be stacked, so that the semiconductor chips (semiconductor chip assemblies) 20, 30, 30 ′ can be obtained with a high yield. Can be manufactured.

[3] Next, an interposer 40 (substrate) having a wiring pattern 50 on the upper surface and a bump 60 on the lower surface is prepared, and a semiconductor chip (laminated body) is disposed on the interposer 40 via the wiring pattern 50. ) 20, 30, 30 'are mounted.
Through the steps as described above, the electronic components 10 and 90 can be manufactured.
[3A] A method of mounting the semiconductor chip (two stacked bodies) 20 on the interposer 40 via the wiring pattern 50 is not particularly limited, but with an adhesive 80 made of various resin materials such as an epoxy resin. Can be installed. Furthermore, the interposer 40 and the semiconductor chip (two stacked bodies) 20 can be electrically connected by a wire (gold wire) 70.
[3B] The method of mounting the semiconductor chip (two stacked bodies) 30 or the semiconductor chip (three stacked bodies) 30 ′ on the interposer 40 via the wiring pattern 50 is not particularly limited. The semiconductor chip (semiconductor chip assembly) 30 or 30 ′ and the wiring pattern 50 on the interposer 40 can be electrically connected using the same conductive connection material as described in the second manufacturing method.

  Since the electronic components 10 and 90 manufactured in this way can increase the integration density of the semiconductor chips 20 or 30 that can be mounted in one package, the electronic devices 10 and 90 can cope with high functionality and downsizing of electronic devices. can do.

  The electronic components 10 and 90 manufactured by the method for manufacturing an electronic component of the present invention include, for example, a mobile phone, a digital camera, a video camera, a car navigation system, a personal computer, a game machine, a liquid crystal television, a liquid crystal display, and an organic electroluminescence. It can be widely used for displays, printers and the like.

  Although the semiconductor device manufacturing method and the electronic component manufacturing method of the present invention have been described above, the present invention is not limited to these.

  The method for manufacturing a semiconductor device of the present invention can be suitably used when the semiconductor wafer and the semiconductor chip are electrically connected and the semiconductor wafer and the semiconductor chip are fixed. By using the method for manufacturing a semiconductor device of the present invention, it is possible to realize a good electrical connection between a semiconductor wafer and a semiconductor chip, and to improve the yield when manufacturing a semiconductor chip (laminated body). In addition, by using the method for manufacturing a semiconductor device of the present invention, it is possible to meet the demand for downsizing and thinning of electronic components.

10, 90 Electronic component 20, 30, 30 ′ Semiconductor chip (laminated body)
40 Interposer 50 Wiring pattern 60, 60 'Conductive connection material 61 Resin composition 62 Metal foil 70 Wire (gold wire)
80 Adhesive 210 Semiconductor wafer 220 First semiconductor chip 230 Second semiconductor chip 211, 221, 231 Functional surface 212, 222, 232 Connection portion 213, 223, 233 Back surface 225, 235 Conductive portion 226, 236 Insulating portion 240, 260 Semiconductor wafer / first semiconductor chip stack 250, 270 Semiconductor wafer / first semiconductor chip assembly 280 Semiconductor wafer / first semiconductor chip / second semiconductor chip stack 290 Semiconductor wafer / first semiconductor chip / Second semiconductor chip assembly 510 First semiconductor chip 520 Semiconductor wafer 511, 521 Connection portion 530 Joint body 540 Second semiconductor chip 550 Semiconductor chip assembly 620 Bump 630 Interposer 640 Wiring pattern 100 Electronic component

Claims (13)

A method of manufacturing a semiconductor device in which a semiconductor wafer and a first semiconductor chip are stacked and electrically connected,
A first step of preparing each of the semiconductor wafer and the first semiconductor chip;
Between the semiconductor wafer and the first semiconductor chip, a conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil is interposed, and the semiconductor wafer Semiconductor wafer / first semiconductor chip in which the semiconductor wafer and the first semiconductor chip are laminated by positioning so that the first terminal of the first semiconductor chip and the second terminal of the first semiconductor chip correspond to each other A second step of obtaining a laminate;
The metal foil is melted by heating the semiconductor wafer / first semiconductor chip stack, and the metal foil is interposed between the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip. Then, the resin composition is hardened or solidified, and the semiconductor wafer and the first semiconductor chip are fixed to each other, whereby the solidified product of the aggregate obtained by melting the metal foil. And a third step of obtaining a semiconductor wafer / first semiconductor chip assembly in which the first terminal of the semiconductor wafer and the second terminal of the first semiconductor chip are electrically connected. A method of manufacturing a semiconductor device.   The method of manufacturing a semiconductor device according to claim 1, wherein a second semiconductor chip is further disposed on a surface of the first semiconductor chip opposite to the second terminal. A method of manufacturing a semiconductor device in which the semiconductor wafer / first semiconductor chip assembly and a second semiconductor chip having a fourth terminal are stacked and electrically connected,
A first step of preparing each of the semiconductor wafer / first semiconductor chip assembly and the second semiconductor chip;
Conductive connection material having a laminated structure composed of a resin composition and a metal foil selected from solder foil or tin foil between the semiconductor wafer / first semiconductor chip assembly and the second semiconductor chip And the semiconductor wafer is positioned so that the third terminal and the fourth terminal disposed on the surface opposite to the second terminal of the first semiconductor chip correspond to each other. / A second step of obtaining a semiconductor wafer / first semiconductor chip / second semiconductor chip stacked body in which a first semiconductor chip bonded body and a second semiconductor chip are stacked;
By heating the semiconductor wafer / first semiconductor chip / second semiconductor chip stack, the metal foil is melted, and the metal foil is agglomerated between the third terminal and the fourth terminal. Then, it is solidified, and further, the resin composition is cured or solidified, and the semiconductor wafer / first semiconductor chip assembly and the second semiconductor chip are fixed, thereby melting the metal foil. A semiconductor wafer / first semiconductor chip / second semiconductor chip assembly in which the semiconductor wafer / first semiconductor chip assembly and the second semiconductor chip are electrically connected with a solidified product of aggregates. A method for manufacturing a semiconductor device according to claim 1, further comprising: a third step of obtaining.   In the third step, when the semiconductor wafer / first semiconductor chip stack or the semiconductor wafer / first semiconductor chip / second semiconductor chip stack is heated, the metal foil is delayed in melting. The method for manufacturing a semiconductor device according to claim 1, wherein the resin composition is completely cured or solidified.   The method for manufacturing a semiconductor device according to claim 1, wherein the resin composition includes a thermosetting resin.   The method for manufacturing a semiconductor device according to claim 1, wherein the resin composition includes a compound having a flux function.   The method for manufacturing a semiconductor device according to claim 1, wherein the conductive connecting material includes a laminated structure including a resin composition layer / metal foil layer / resin composition layer.   The method for manufacturing a semiconductor device according to claim 1, wherein the conductive connection material includes a laminated structure including a resin composition layer / a metal foil layer.   A semiconductor device manufactured by the manufacturing method according to claim 1.   9. The semiconductor wafer / first semiconductor chip assembly or the semiconductor wafer / first semiconductor chip / second semiconductor chip assembly manufactured by the method for manufacturing a semiconductor device according to claim 1 individually. A method for manufacturing a semiconductor device, comprising a step of cutting each circuit into pieces into a plurality of semiconductor chips.   A semiconductor device manufactured by the manufacturing method according to claim 10.   A method for manufacturing an electronic component comprising a step of mounting the separated semiconductor device on a substrate.   An electronic component manufactured by the manufacturing method according to claim 12.

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