JP2011151251A - Conductive connection material with back grind tape, inter-terminal connection method, and electric/electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conductive connection material with a back grind tape capable of protecting a circuit surface of a semiconductor wafer in a polishing process of the semiconductor wafer, reducing warpage of the semiconductor wafer after polishing, and providing excellent electric connection between a semiconductor chip and connection terminals of a circuit board and high insulation reliability between adjacent terminals, and excelling in productivity of an electric/electronic component. <P>SOLUTION: This conductive connection material with a back grind tape is formed by laminating a back grind tape and a conductive connection material, wherein the conductive connection material includes a lamination structure comprising a resin composition and metal foil selected from solder foil or tin foil. The electric/electronic component of this invention includes a conductive connection material being the above conductive connection material with a back grind tape. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a conductive connection material with a back grind tape, a connection method between terminals, and electrical and electronic components.

  In recent years, there have been remarkable technological innovations for reducing the size and thickness of semiconductor devices, and various package structures have been proposed and commercialized. In recent years, instead of conventional lead frame bonding, an area mounting method in which a semiconductor chip and a circuit board are bonded via a protruding electrode directly formed on a circuit surface of the semiconductor chip is becoming mainstream.

  A typical example of this area mounting method is flip chip mounting. In flip chip mounting, it is common to seal the gap between a semiconductor chip and a circuit board with a resin composition for the purpose of reinforcing joints and improving reliability.

  As a resin sealing method, a capillary underfill method is generally used. This method is performed by applying a liquid sealing resin composition to one side or a plurality of sides of a chip and flowing the resin composition into the gap between the circuit board and the chip using a capillary phenomenon (Patent Document 1).

  However, the cavity underfill method requires a process of bonding a semiconductor chip and a circuit board using a flux and a flux cleaning process, so that the process becomes longer and environmental management such as cleaning waste liquid treatment problems is severe. Must. Further, since the sealing is performed by a capillary phenomenon, the sealing time becomes long and there is a problem in productivity.

  In flip chip mounting, a method is known in which an electrical connection and sealing between a semiconductor chip and a circuit board are performed at once using an anisotropic conductive film. For example, a method has been proposed in which an adhesive tape containing solder particles is interposed between members and thermocompression bonded so that the solder particles are interposed between the electrical connection portions of both members and the other portions are filled with a resin component. In addition, a method for connecting terminals using an anisotropic conductive adhesive containing conductive particles and a resin component that does not complete curing at the melting point of the conductive particles has been proposed (Patent Document 2 and Patent Document 3). .

  However, it is very difficult to control the aggregation of the conductive particles. (1) The conductive particles and the terminals, or the conductive particles are not sufficiently in contact with each other, and a part between the opposing terminals is not conductive. (2) In some cases, conductive particles remain in the resin (insulating region) other than between the opposing terminals (conducting region) to cause leakage current, and insulation between adjacent terminals cannot be sufficiently secured. It was. For this reason, it is difficult for conventional anisotropic conductive adhesives and anisotropic conductive films to cope with further narrow pitches between terminals.

  Also, in recent years, with the demand for thinner semiconductor packages, semiconductor wafers are also usually polished thinly. When polishing a semiconductor wafer, a back grind tape is pressure-bonded to the circuit surface of the semiconductor wafer for the purpose of protecting the circuit surface of the semiconductor wafer, and the back surface of the semiconductor wafer is polished. Thereafter, a die attach film is attached to the surface opposite to the circuit surface of the semiconductor wafer, the back grind tape is peeled off, and the semiconductor wafer is separated into individual pieces to produce a semiconductor chip with a die attach film. Although semiconductor chips are mounted on a die attach film and electrical and electronic parts are manufactured through a process such as wire bonding, the process is complicated and a simpler method is required. ing.

JP 2007-217708 A JP-A 61-276873 JP 2004-260131 A

The object of the present invention is to protect the circuit surface of the semiconductor wafer in the polishing process of the semiconductor wafer, to reduce the warp of the semiconductor wafer after polishing, and to be good between the connection terminals of the semiconductor chip and the circuit board. Another object of the present invention is to provide a conductive connection material with a back grind tape that can obtain high electrical reliability and high insulation reliability between adjacent terminals, and is excellent in productivity of electric and electronic parts.
Another object of the present invention is to provide an electrical or electronic component that is electrically connected using the conductive connection material.

Such an object is achieved by the present invention described in the following (1) to (13).
(1) A conductive connecting material with a back grind tape in which a back grind tape and a conductive connecting material are laminated, wherein the conductive connecting material is a resin composition and a metal foil selected from a solder foil or a tin foil. Conductive connection material with back grind tape, characterized by having a laminated structure configured,
(2) The back according to (1), wherein a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes and the conductive connection material of the conductive connection material with the back grind tape are adhered to each other. Conductive connection material with grind tape,
(3) The conductive connecting material with a back grind tape according to (1) or (2), which has a release film between the back grind tape and the conductive connecting material,
(4) The conductive connection material with a back grind tape according to any one of (1) to (3), wherein the resin composition contains a compound having a flux function.
(5) The conductive connection material with a back grind tape according to (4), wherein the compound having the flux function has a phenolic hydroxyl group and / or a carboxyl group,
(6) The conductive connection with a back grind tape according to any one of (1) to (5), wherein the conductive connection material includes a laminated structure composed of a resin composition layer / metal foil layer / resin composition layer. material,
(7) The conductive connection material with a back grind tape according to any one of (1) to (5), wherein the conductive connection material includes a laminated structure composed of a resin composition layer / metal foil layer,
(8) Adhering the conductive connection material of the conductive connection material with a back grind tape according to any one of (1) to (7) and a circuit surface of a semiconductor wafer having a circuit surface on which connection electrodes are provided. An adhesion step, a polishing step for polishing the surface opposite to the circuit surface of the semiconductor wafer, and an individualization step for obtaining a semiconductor chip by dividing the conductive connection material with the back grind tape into a bonded state, A pickup step of picking up the semiconductor chip to which the conductive connection material is bonded; a mounting step of mounting the semiconductor chip to which the conductive connection material is bonded;
A connection between terminals including a heating step of heating the conductive connection material at a temperature that is equal to or higher than the melting point of the metal foil and the curing of the resin composition is not completed, and a curing step of curing the resin composition. Method,
(9) The conductive connection material of the conductive connection material with a back grind tape according to any one of (1) to (7) and a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes are bonded. Conductive connection material adhering step with back grind tape, polishing step for polishing the surface opposite to the circuit surface of the semiconductor wafer, and the semiconductor connection chip with the back grind tape adhering to the conductive connection material An individualizing step, a pickup step for picking up a semiconductor chip to which the conductive connection material is bonded, a mounting step for mounting the semiconductor chip to which the conductive connection material is bonded on a substrate, and a melting point of the metal foil or higher. And a heating step of heating the conductive connection material at a temperature at which the resin composition softens, and a solidification step of solidifying the resin composition. A method of connecting a child,
(10) Adhering the conductive connection material of the conductive connection material with a back grind tape according to any one of (1) to (7) and a circuit surface of a semiconductor wafer having a circuit surface on which connection electrodes are provided. Conductive connecting material bonding step with back grind, polishing step for polishing the surface opposite to the circuit surface of the semiconductor wafer, and dicing sheet bonding step for bonding a dicing sheet to the surface opposite to the circuit surface of the semiconductor wafer; , A peeling step for peeling the back grind tape, and a singulation step for obtaining a semiconductor chip by dividing the conductive connection material into a bonded state,
A pick-up step for picking up a semiconductor chip to which the conductive connection material is bonded, a mounting step for mounting the semiconductor chip to which the conductive connection material is bonded on a substrate, a melting point of the metal foil or higher, and the resin composition A connection method between terminals, including a heating step of heating the conductive connection material at a temperature at which curing of the object is not completed, and a curing step of curing the resin composition,
(11) Adhering the conductive connection material of the conductive connection material with a back grind tape according to any one of (1) to (7) and a circuit surface of a semiconductor wafer having a circuit surface on which connection electrodes are provided. Conductive connection material bonding step with back grind tape, polishing step for polishing the surface opposite to the circuit surface of the semiconductor wafer, and dicing sheet bonding step for bonding a dicing sheet to the surface opposite to the circuit surface of the semiconductor wafer A peeling step for peeling the back grind tape, a singulation step for obtaining a semiconductor chip by separating the conductive connection material with the back grind tape, and a semiconductor to which the conductive connection material is bonded A pickup step of picking up a chip, a mounting step of mounting a semiconductor chip to which the conductive connecting material is bonded, on the substrate; Shokuhaku is equal to or higher than a melting point of, and, a method of connecting terminals comprising a heating process of the resin composition to heat said electrically conductive connecting material at a temperature which softens the solidifying step of solidifying the resin composition, and
(12) Conductive connection formed by adhering a conductive connection material with a back grind tape according to any one of (1) to (7) to a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes. Electronic components with materials,
(13) An electrical or electronic component in which electronic members are electrically connected using the conductive connection material with a back grind tape described in any one of (1) to (7).

According to the present invention, the circuit surface of the semiconductor wafer can be protected in the polishing process of the semiconductor wafer, and the warp of the semiconductor wafer after polishing can be reduced, and it is good between the connection terminals of the semiconductor chip and the circuit board. Therefore, it is possible to provide a conductive connection material with a back grind tape that can obtain high electrical reliability and high insulation reliability between adjacent terminals, and is excellent in the productivity of electrical and electronic components.
Moreover, according to this invention, the electrical and electronic component which are electrically connected using the said conductive connection material can be provided.

It is sectional drawing which shows typically an example of the conductive connection material with a back grind tape of this invention. It is a plane schematic diagram which shows an example of the shape of the metal foil layer concerning this invention. It is sectional drawing which shows typically an example of the manufacturing method of the electrically conductive connection material which concerns on this invention. It is sectional drawing which shows typically an example of the manufacturing method of the electrically conductive connection material with a back grind tape of this invention. In the connection method between terminals of this invention, it is sectional drawing which shows typically an example of the state which adhere | attached the semiconductor wafer on the conductive connection material with a back grind tape. It is sectional drawing which shows typically an example of the process of grind | polishing the surface on the opposite side to the circuit surface of a semiconductor wafer in the connection method between the terminals of this invention. In the inter-terminal connection method of this invention, it is sectional drawing which shows typically an example of the state which adhere | attached the dicing sheet on the surface on the opposite side to the circuit surface of a semiconductor wafer. In the inter-terminal connection method of this invention, it is sectional drawing which shows an example of the state which peeled the back grind tape. It is sectional drawing which shows typically an example of the process of dicing a semiconductor wafer in the connection method between the terminals of this invention. In the connection method between terminals of this invention, it is sectional drawing which shows typically an example of the state of the semiconductor chip after dicing a semiconductor wafer, and a conductive connection material. It is sectional drawing which shows typically an example of the process of picking up a semiconductor chip in the connection method between the terminals of this invention. In the connection method between terminals of this invention, it is sectional drawing which shows roughly an example of the state of a semiconductor chip, a board | substrate, and a conductive connection material at the time of mounting the semiconductor chip with which the conductive connection material was adhere | attached on the board | substrate. In the connection method between the terminals of this invention, it is sectional drawing which shows roughly an example of the state of the board | substrate after heating and hardening / solidifying the conductive connection material arrange | positioned between terminals, an electroconductive area | region, and an insulating area | region. In the connection method between terminals of this invention, it is sectional drawing which shows typically an example of the state which adhere | attached the semiconductor wafer on the conductive connection material with a back grind tape. It is sectional drawing which shows typically an example of the process of grind | polishing the surface on the opposite side to the circuit surface of a semiconductor wafer in the connection method between the terminals of this invention. It is sectional drawing which shows typically an example of the process of dicing a semiconductor wafer in the connection method between the terminals of this invention. In the connection method between terminals of this invention, it is sectional drawing which shows typically an example of the state of the semiconductor chip after dicing a semiconductor wafer, and a conductive connection material. It is sectional drawing which shows typically an example of the process of picking up a semiconductor chip in the connection method between the terminals of this invention. In the connection method between terminals of this invention, it is sectional drawing which shows roughly an example of the state of a semiconductor chip, a board | substrate, and a conductive connection material at the time of mounting the semiconductor chip with which the conductive connection material was adhere | attached on the board | substrate. In the connection method between the terminals of this invention, it is sectional drawing which shows roughly an example of the state of the board | substrate after heating and hardening / solidifying the conductive connection material arrange | positioned between terminals, an electroconductive area | region, and an insulating area | region.

  Hereinafter, the conductive connection material with the back grind tape of the present invention, the connection method between the terminals using the conductive connection material, and the electric and electronic parts electrically connected using the conductive connection material will be described in detail.

1. Conductive connecting material 10 with back grind tape The conductive connecting material 10 with back grind tape of the present invention includes a back grind tape 1, a metal foil 110, and a metal foil 110, each comprising a base material 11 and an adhesive layer 12, as shown in FIG. It is comprised with the conductive connection material 2 and the peeling base material 21 which consist of the resin composition 120 provided in both surfaces. Although not shown, a release film may be provided between the back grind tape 1 and the conductive connection material 2. Thereby, peeling between the back grind tape 1 and the conductive connection material 2 becomes easy.

<1> Conductive Connection Material Hereinafter, the conductive connection material according to the present invention will be described, but the conductive connection material according to the present invention is not limited to this.
The conductive connection material according to the present invention includes a resin composition and a metal foil selected from solder foil or tin foil. The form is a laminate having a multilayer structure composed of a resin composition layer and a metal foil layer, and each of the resin composition layer and the metal foil layer may be a single layer or a plurality of layers. The laminated structure of the conductive connecting material is not particularly limited, and may be a two-layer structure (resin composition layer / metal foil layer) of the resin composition layer and the metal foil layer, or either the resin composition layer or the metal foil layer. Alternatively, it may be a three-layer structure including a plurality of both or a multilayer structure having more. In addition, when using two or more resin composition layers or metal foil layers, the composition of each layer may be the same or different.

  In one embodiment of the present invention, the upper and lower layers of the metal foil layer are preferably resin composition layers from the viewpoint of reducing the surface oxide film of the metal foil with a compound having a flux function. For example, a three-layer structure (resin composition layer / metal foil layer / resin composition layer) is preferable. In this case, the thickness of the resin composition layer on both sides of the metal foil layer may be the same or different. The thickness of the resin composition layer may be appropriately adjusted depending on the conductor thickness of the terminal to be connected. For example, when manufacturing a connection terminal using the conductive connection material in which the thickness of the resin composition layer on both sides of the metal foil layer is different, it is preferable to arrange the thinner one on the connection terminal side (electrode side). By shortening the distance between the metal foil and the connection terminal, it becomes easy to control the aggregation of the solder or tin component to the connection terminal portion.

  In another embodiment of the present invention, for example, when manufacturing a connection terminal on an electronic member such as a semiconductor wafer, the conductive connection material has a resin composition layer only on one side of the metal foil layer. Part can be exposed, which is preferable. When connecting opposing connection terminals using a conductive connection material having a two-layer structure, the resin composition layer side may be arranged in contact with the connection terminal, or the metal foil layer side may be arranged in contact with the connection terminal. May be. When connecting connection terminals of opposing electronic members using a conductive connection material having a two-layer structure, the conductive connection material is attached to both of the opposing electronic members, and then the electronic member with the conductive connection material is attached. Is preferred. The arrangement direction of the conductive connection material may be appropriately selected depending on the pattern shape of the metal foil.

  Next, the resin composition and metal foil used in the present invention will be described.

(1) Resin Composition In the present invention, the resin composition may be in a liquid or solid form at room temperature. Here, “liquid state at room temperature” means a state having no fixed form at room temperature (25 ° C.). Paste forms are also included in liquid form.

  In the present invention, any of a curable resin composition and a thermoplastic resin composition may be used as the resin composition. Examples of the curable resin composition used in the present invention include those that are cured by heating or irradiation with actinic radiation. A thermosetting resin composition is preferable in that it is excellent in mechanical properties such as linear expansion coefficient and elastic modulus after curing. The thermoplastic resin composition used in the present invention is not particularly limited as long as it is flexible enough to be molded by heating to a predetermined temperature.

(A) Curable resin composition In addition to the curable resin, the curable resin composition used in the present invention, if necessary, a film-forming resin, a curing agent, a curing accelerator, a compound having a flux function, silane Coupling agents and the like are included.

(I) Curable resin The curable resin used by this invention will not be specifically limited if normally used as an adhesive component for semiconductor device manufacture. For example, epoxy resin, phenoxy resin, silicone resin, oxetane resin, phenol resin, (meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin, maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide -Triazine resin etc. are mentioned. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Especially, it is preferable to use an epoxy resin from a viewpoint that it is excellent in sclerosis | hardenability and preservability, the heat resistance of a hardened | cured material, moisture resistance, and chemical resistance. These curable resins may be used alone or in combination of two or more.

Content of curable resin can be suitably set according to the form of curable resin composition.
For example, when the curable resin composition is liquid, the content of the curable resin is preferably 10% by weight or more, more preferably 15% by weight or more, and more preferably 20% by weight with respect to the total weight of the curable resin composition. The above is more preferable, 25% by weight or more is further more preferable, 30% by weight or more is still more preferable, and 35% by weight or more is particularly preferable. Further, it is preferably less than 100% by weight, more preferably 95% by weight or less, still more preferably 90% by weight or less, still more preferably 75% by weight or less, still more preferably 65% by weight or less, and particularly preferably 55% by weight or less.
When the curable resin composition is solid, the content of the curable resin is preferably 5% by weight or more, more preferably 10% by weight or more, and more preferably 15% by weight with respect to the total weight of the curable resin composition. The above is more preferable, and 20% by weight or more is particularly preferable. Moreover, 90 weight% or less is preferable, 85 weight% or less is more preferable, 80 weight% or less is further more preferable, 75 weight% or less is still more preferable, 65 weight% or less is still more preferable, 55 weight% or less is especially preferable.
When the content of the curable resin is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals can be sufficiently secured.

  In the present invention, any epoxy resin that is liquid at room temperature and solid at room temperature may be used. An epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature may be used in combination. When the curable resin composition is liquid, it is preferable to use a liquid epoxy resin at room temperature, and when the curable resin composition is solid, use either a liquid or solid epoxy resin. However, when a solid epoxy resin is used, it is preferable to use a film-forming resin in combination.

Preferred examples of the epoxy resin that is liquid at room temperature (25 ° C.) include bisphenol A type epoxy resins and bisphenol F type epoxy resins. A bisphenol A type epoxy resin and a bisphenol F type epoxy resin may be used in combination.
The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. If the epoxy equivalent is less than the above lower limit, the shrinkage of the cured product tends to increase, and warping may occur. On the other hand, when the upper limit is exceeded, when a film-forming resin is used in combination, the reactivity with a film-forming resin, particularly a polyimide resin, tends to decrease.

Examples of solid epoxy resins at room temperature (25 ° C.) include bisphenol A type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, glycidyl amine type epoxy resins, and glycidyl ester type epoxies. Resin, trifunctional epoxy resin, tetrafunctional epoxy resin, etc. are mentioned. Among these, solid trifunctional epoxy resin, cresol novolac type epoxy resin and the like are preferable. These epoxy resins may be used alone or in combination of two or more.
The epoxy equivalent of the epoxy resin solid at room temperature is preferably 150 to 3000 g / eq, more preferably 160 to 2500 g / eq, and particularly preferably 170 to 2000 g / eq.
The softening point of the epoxy resin solid at room temperature is preferably 40 to 120 ° C, more preferably 50 to 110 ° C, and particularly preferably 60 to 100 ° C. When the softening point is within the above range, tackiness can be suppressed and handling can be easily performed.

(Ii) Film-forming resin When a solid curable resin composition is used, it is preferable to use the curable resin and the film-forming resin in combination. The film-forming resin used in the present invention is not particularly limited as long as it is soluble in an organic solvent and has film-forming properties alone. Either a thermoplastic resin or a thermosetting resin can be used, and these can be used in combination. Specifically, as the film-forming resin, (meth) acrylic resin, phenoxy resin, polyester resin (saturated polyester resin), polyurethane resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, polypropylene resin, Styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene- Acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, nylon and the like can be mentioned. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, and polyimide resins are preferable. A film-forming resin may be used alone or in combination of two or more.

  In this specification, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a copolymer of (meth) acrylic acid and its derivatives and other monomers. Means. When expressed as “(meth) acrylic acid” or the like, it means “acrylic acid or methacrylic acid” or the like.

  Examples of the (meth) acrylic resin used in the present invention include polyacrylic acid such as polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and poly-2-ethylhexyl acrylate. Esters, polymethacrylates such as polymethyl methacrylate, polyethyl methacrylate, polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile-butadiene Copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methacrylate Acid methyl-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate- Acrylonitrile-2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile Examples thereof include a copolymer and an ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable. These (meth) acrylic resins may be used alone or in combination of two or more.

  Although the skeleton of the phenoxy resin used in the present invention is not particularly limited, bisphenol A type, bisphenol F type, biphenyl type, and the like are preferable.

  The polyimide resin used in the present invention is not particularly limited as long as the resin has an imide bond in the repeating unit. For example, what is obtained by making diamine and acid dianhydride react, heating the obtained polyamic acid, and carrying out dehydration ring closure is mentioned.

  Examples of the diamine include aromatic diamines such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-p-phenylenediamine, Examples thereof include siloxane diamines such as 3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane. A diamine may be used individually by 1 type, or may use 2 or more types together.

  Examples of the acid dianhydride include 3,3,4,4'-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4'-oxydiphthalic dianhydride, and the like. An acid dianhydride may be used individually by 1 type, or may use 2 or more types together.

  The polyimide resin may be soluble or insoluble in a solvent, but is preferably a solvent-soluble one because it can be easily varnished when mixed with other components and has excellent handleability. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The weight average molecular weight of the film-forming resin used in the present invention is preferably 8,000 to 1,000,000, more preferably 8,500 to 950,000, and still more preferably 9,000 to 900,000. When the weight average molecular weight of the film-forming resin is within the above range, the film-forming property can be improved, and the fluidity of the conductive connecting material before curing can be suppressed. The weight average molecular weight of the film-forming resin can be measured by GPC (gel permeation chromatography).

  In the present invention, commercially available products can be used as such film-forming resins. Furthermore, in a range that does not impair the effects of the present invention, a film-forming resin may be used in which various additives such as a plasticizer, a stabilizer, an inorganic filler, an antistatic agent and a pigment are blended.

In the conductive connection material used in the present invention, the content of the film-forming resin can be appropriately set according to the form of the curable resin composition to be used.
For example, in the case of a solid curable resin composition, the content of the film-forming resin is preferably 5% by weight or more with respect to the total weight of the curable resin composition, and is 10% by weight or more. It is more preferable that the content is 15% by weight or more. Further, it is preferably 50% by weight or less, more preferably 45% by weight or less, and particularly preferably 40% by weight or less. When the content of the film-forming resin is within the above range, the fluidity of the curable resin composition before melting can be suppressed, and the conductive connecting material can be easily handled.

(Iii) Curing Agent Preferred examples of the curing agent used in the present invention include phenols, acid anhydrides, and amine compounds. A hardening | curing agent can be suitably selected according to the kind etc. of curable resin. For example, when an epoxy resin is used as the curable resin, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance, etc.) are obtained. Phenols are preferably used as the curing agent, and bifunctional or higher functional phenols are more preferable in terms of excellent physical properties after curing of the curable resin. Moreover, such a hardening | curing agent may be used individually by 1 type, and may use 2 or more types together.

Examples of the phenols include bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolac resin, and cresol novolac resin. Of these, phenol novolac resins and cresol novolac resins are preferable because they have good reactivity with epoxy resins and excellent physical properties after curing.

When the content of the curing agent has a functional group that functions as a curing agent when the compound having a flux function described below and the type of the curable resin or the curing agent to be used have a functional group, the content should be selected as appropriate. Can do.
For example, when an epoxy resin is used as the curable resin, the content of the curing agent is preferably 0.1 to 50% by weight and more preferably 0.2 to 40% by weight with respect to the total weight of the curable resin composition. 0.5 to 30% by weight is preferable. When the content of the curing agent is within the above range, the electrical connection strength between the terminals and the mechanical adhesive strength can be sufficiently secured.

(Iv) Curing accelerator The curing accelerator used in the present invention is imidazole, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole. 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl- 4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate 2 , 4-Diamino-6- [2'-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl (1')]-ethyl-s- Triazine, 2,4-diamino-6- [2'-ethyl-4-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl (1') ] Isocyanuric acid adduct of 2-ethyl-s-triazine, isocyanuric acid adduct of 2-phenylimidazole, isocyanuric acid adduct of 2-methylimidazole, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4 -Imidazole compounds such as methyl-5-hydroxymethylimidazole.

Content of the said hardening accelerator can be suitably set according to the kind of hardening accelerator to be used.
For example, when an imidazole compound is used, the content of the imidazole compound is preferably 0.001% by weight or more, more preferably 0.003% by weight or more, based on the total weight of the curable resin composition. 0.005% by weight or more is particularly preferable. Moreover, 1.0 weight% or less is preferable, 0.7 weight% or less is more preferable, and 0.5 weight% or less is especially preferable. When the content of the imidazole compound is less than the lower limit, the effect as a curing accelerator is not sufficiently exhibited, and the curable resin composition may not be sufficiently cured. On the other hand, when the content of the imidazole compound exceeds the above upper limit, the solder or tin does not move sufficiently to the terminal surface before the curing of the curable resin composition is completed, and the solder or tin remains in the insulating region and is insulative. May not be sufficient. In addition, the storage stability of the conductive connection material may be reduced.

(V) Compound having a flux function The compound having a flux function used in the present invention has a function of reducing a metal oxide film such as a surface oxide film of a terminal and a metal foil. For example, the compound having a flux function is preferably a compound having a phenolic hydroxyl group and / or a carboxyl group. Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol AF, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Nord F novolak resins, resins containing a phenolic hydroxyl group such as bisphenol A novolac resin.

  Examples of the compound having a carboxyl group include an aliphatic acid anhydride, an alicyclic acid anhydride, an aromatic acid anhydride, an aliphatic carboxylic acid, and an aromatic carboxylic acid. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, and polysebacic acid anhydride. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, and glycerol tris trimellitate.

Examples of the aliphatic carboxylic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, Examples include oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, and pimelic acid. Among them, the following formula (1):
_{HOOC- (CH 2) n -COOH (} 1)
(In Formula (1), n is an integer of 1-20.)
Are preferable, and adipic acid, sebacic acid, and dodecanedioic acid are more preferable.

［式中、Ｒ^１〜Ｒ^５は、それぞれ独立して、１価の有機基であり、Ｒ^１〜Ｒ^５の少なくとも一つは水酸基である。］

［式中、Ｒ^６〜Ｒ^２０は、それぞれ独立して、１価の有機基であり、Ｒ^６〜Ｒ^２０の少なくとも一つは水酸基又はカルボキシル基である。］ The structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or (3) is preferable.

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

  Aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, meritic acid, xylylic acid, hemelitonic acid, mesitylene Acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,5-2 Examples thereof include naphthoic acid derivatives such as dihydroxy-2-naphthoic acid, phenolphthaline, and diphenolic acid.

  Among these, in the present invention, a compound that not only has a flux function but also acts as a curing agent for the curable resin is preferable. That is, as the compound having a flux function used in the present invention, a compound having a functional group capable of reacting with a curable resin and exhibiting an action of reducing a metal surface oxide film such as a metal foil and a terminal is used. preferable. The functional group is appropriately selected depending on the type of curable resin. For example, when an epoxy resin is used as the curable resin, the functional group is preferably a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group. A compound having a flux function also acts as a curing agent, thereby reducing metal surface oxide films such as metal foils and terminals to increase the wettability of the metal surface, facilitating the formation of conductive regions, After forming the property region, it can be added to the curable resin to increase the elastic modulus or Tg of the resin. In addition, since the compound having a flux function acts as a curing agent, there is an advantage that flux cleaning is not required and the occurrence of ion migration due to the remaining flux component can be suppressed.

The compound having such a flux function preferably has at least one carboxyl group. For example, when an epoxy resin is used as the curable resin, examples of the compound include aliphatic dicarboxylic acids or compounds having a carboxyl group and a phenolic hydroxyl group.
Preferred examples of the aliphatic dicarboxylic acid include compounds in which two carboxyl groups are bonded to an aliphatic hydrocarbon group. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

  As such aliphatic dicarboxylic acid, the compound whose n is an integer of 1-20 in the said Formula (1) is mentioned preferably. When n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of bonding, the elastic modulus after the conductive connecting material is cured, and the glass transition temperature becomes good. In particular, n is preferably 3 or more because an increase in the elastic modulus after curing of the conductive connecting material can be suppressed and the adhesion to the adherend can be improved. In addition, n is preferably 10 or less because it is possible to suppress a decrease in elastic modulus and further improve connection reliability.

  Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, and pentadecane. Examples include diacid, octadecanedioic acid, nonadecanedioic acid, and eicosanedioic acid. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is particularly preferable.

  Examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxybenzoic acid. Benzoic acid derivatives such as acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2- Examples include naphthoic acid derivatives such as naphthoic acid, phenolphthaline, and diphenolic acid. Of these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthalin and gentisic acid are particularly preferable.

  A compound having a flux function may be used alone or in combination of two or more. Moreover, since any compound easily absorbs moisture and causes voids, it is preferable to dry the compound having a flux function in advance before use.

Content of the compound which has a flux function can be suitably set according to the form of the resin composition to be used.
For example, when the resin composition is liquid, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, and more preferably 3% by weight with respect to the total weight of the curable resin composition. The above is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.
In the case of a solid resin composition, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, more preferably 3% by weight with respect to the total weight of the curable resin composition. % Or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.
When the content of the compound having the flux function is within the above range, the metal foil and the surface oxide film of the terminal can be removed to such an extent that they can be electrically joined. Further, when the resin composition is a curable resin, it can be efficiently added to the resin at the time of curing to increase the elastic modulus or Tg of the resin. Moreover, generation | occurrence | production of the ion migration resulting from the compound which has an unreacted flux function can be suppressed.

(Vi) Silane coupling agent Examples of the silane coupling agent used in the present invention include an epoxy silane coupling agent and an aromatic-containing aminosilane coupling agent. By adding the silane coupling agent, the adhesion between the bonding member and the conductive connecting material can be enhanced. A silane coupling agent may be used individually by 1 type, and may use 2 or more types together.

Content of a silane coupling agent can be suitably selected according to types, such as a joining member and curable resin. For example, the content of the silane coupling agent is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, and particularly preferably 0.1% by weight or more with respect to the total weight of the curable resin composition. It is preferably 2% by weight or less, more preferably 1.5% by weight or less, and particularly preferably 1% by weight or less.

  In the curable resin composition used in the present invention, a plasticizer, a stabilizer, a tackifier, a lubricant, a filler, an antistatic agent, a pigment, and the like may be blended as long as the effects of the present invention are not impaired.

  In the present invention, the curable resin composition can be prepared by mixing and dispersing the above components. The mixing method and dispersion method of each component are not specifically limited, It can mix and disperse | distribute by a conventionally well-known method.

  Moreover, in this invention, you may mix the said each component in a solvent or under absence of solvent, and may prepare a liquid curable resin composition. The solvent used at this time is not particularly limited as long as it is inert to each component. For example, acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), diisobutyl ketone (DIBK), cyclohexanone, Ketones such as diacetone alcohol (DAA), aromatic hydrocarbons such as benzene, xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, Cellosolves such as methyl cellosolve acetate and ethyl cellosolve acetate, N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), dimethylformamide (DMF), dibasic acid ester (DB ), Ethyl 3-ethoxypropionate (EEP), and dimethyl carbonate (DMC). Moreover, it is preferable that the usage-amount of a solvent is an quantity from which the solid content concentration of the component mixed with the solvent will be 10 to 60 weight%.

(B) Thermoplastic resin composition In this invention, a thermoplastic resin composition can also be used as a resin composition.
The thermoplastic resin composition used in the present invention includes, in addition to the thermoplastic resin, a compound having a flux function, a silane coupling agent, and the like as necessary.

(I) Thermoplastic resin Examples of the thermoplastic resin used in the present invention include vinyl acetate, polyvinyl alcohol resin, polyvinyl butyral resin, vinyl chloride resin, (meth) acrylic resin, phenoxy resin, polyester resin, polyimide resin, and polyamide. Imide resin, siloxane-modified polyimide resin, polybutadiene resin, acrylic resin, styrene resin, polyethylene resin, polypropylene resin, polyamide resin, cellulose resin, isobutylene resin, vinyl ether resin, liquid crystal polymer resin, polyphenylene sulfide resin, polyphenylene ether resin, polyether mon Phon resin, polyether imide resin, polyether ether ketone resin, polyurethane resin, styrene-butadiene-styrene copolymer, styrene-ethylene-buty Lene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, poly Examples include vinyl acetate. The thermoplastic resin may be a single polymer or two or more copolymers of the above thermoplastic resins.

  The softening point of the thermoplastic resin is not particularly limited, but is preferably 10 ° C. or more lower than the melting point of the metal foil constituting the conductive connection material, particularly preferably 20 ° C. or more, and more preferably 30 ° C. or more. .

  The decomposition temperature of the thermoplastic resin is not particularly limited, but is preferably 10 ° C. or higher, particularly preferably 20 ° C. or higher, and more preferably 30 ° C. or higher than the melting point of the metal foil constituting the conductive connecting material. More preferred.

Content of a thermoplastic resin can be suitably set according to the form of the thermoplastic resin composition to be used.
For example, when the thermoplastic resin composition is liquid, the content of the thermoplastic resin is preferably 10% by weight or more, more preferably 15% by weight or more, and more preferably 20% by weight with respect to the total weight of the thermoplastic resin composition. The above is more preferable, 25% by weight or more is further more preferable, 30% by weight or more is still more preferable, and 35% by weight or more is particularly preferable. Moreover, 100 weight% or less is preferable, 95 weight% or less is more preferable, 90 weight% or less is more preferable, 75 weight% or less is still more preferable, 65 weight% or less is still more preferable, 55 weight% or less is especially preferable.
When the thermoplastic resin composition is solid, the content of the thermoplastic resin is preferably 5% by weight or more, more preferably 10% by weight or more, and more preferably 15% by weight with respect to the total weight of the thermoplastic resin composition. The above is more preferable, and 20% by weight or more is particularly preferable. Moreover, 90 weight% or less is preferable, 85 weight% or less is more preferable, 80 weight% or less is further more preferable, 75 weight% or less is still more preferable, 65 weight% or less is still more preferable, 55 weight% or less is especially preferable.
When the content of the thermoplastic resin is within the above range, the electrical connection strength between the terminals and the mechanical adhesive strength can be sufficiently secured.

(Ii) Other additives The compound having a flux function, the silane coupling agent, and other additives used in the thermoplastic resin composition of the present invention are the same as those described in the above “(a) Curable resin composition”. The same can be used. The content of each component, preferred compounds and preparation methods are also the same as those described for the curable resin composition.

  In the present invention, it is preferable to use a curable resin composition as the resin composition. Among them, the epoxy resin is 10 to 90% by weight, the curing agent is 0.1 to 50% by weight, the film-forming resin is 5 to 50% by weight, and the compound having a flux function is 1 to 50% by weight based on the total weight of the resin composition More preferably, it contains The epoxy resin is 20 to 80% by weight, the curing agent is 0.2 to 40% by weight, the film-forming resin is 10 to 45% by weight, and the compound having a flux function is 2 to 40% by weight with respect to the total weight of the resin composition. More preferably, those containing The epoxy resin is 35 to 55% by weight, the curing agent is 0.5 to 30% by weight, the film-forming resin is 15 to 40% by weight, and the compound having a flux function is 3 to 25% by weight with respect to the total weight of the resin composition. Those containing are particularly preferred.

  In the conductive connection material of the present invention, the thickness of each resin composition layer is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, and particularly preferably 5 μm or more. Further, the thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, and particularly preferably 100 μm or less. When the thickness of the resin composition layer is within the above range, the gap between adjacent terminals can be sufficiently filled with the resin composition, and the mechanical adhesive strength after the resin composition is cured or solidified and opposed. A sufficient electrical connection between the terminals can be ensured, and the connection terminals can be manufactured.

  When the conductive connection material of the present invention includes a plurality of resin composition layers, the composition of each resin composition layer may be the same, or may differ depending on the type of resin component used, the difference in formulation, and the like. The physical properties such as melt viscosity and softening temperature of the resin composition layer may be the same or different. For example, a liquid resin composition layer and a solid resin composition layer may be used in combination.

(2) Metal foil In this invention, a metal foil layer is a layer comprised with the metal foil chosen from solder foil or tin foil. The metal foil layer should just be formed in at least one part of the resin composition layer by planar view, and may be formed in the whole surface of the resin composition layer.

  The shape of the metal foil layer is not particularly limited, and a certain shape may be repeatedly formed in a pattern shape, or the shape may be irregular. Regular shapes and irregular shapes may be mixed. FIG. 2 is a schematic plan view showing an example of the shape of the metal foil layer. A metal foil layer 150 having various shapes is formed on the resin composition layer 160. As the shape of the metal foil layer, for example, a dotted pattern (a), a striped pattern (b), a polka dot pattern (c), a rectangular pattern (d), a checkered pattern as shown in FIG. Examples include (e), a frame shape (f), a lattice pattern shape (g), and a multiple frame shape (h). These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  In one embodiment of the present invention, when connecting a full grid type adherend in which the electrode to be connected is disposed on the entire connection surface of the adherend, a sheet-like metal is formed on the entire surface of the resin composition. It is preferable to form a foil.

In addition, when connecting a peripheral type adherend in which the electrode to be connected is arranged in the periphery of the connection surface of the adherend, from the viewpoint of effectively using the metal foil, and between adjacent electrodes From the viewpoint of not leaving the metal foil, it is preferable to form a patterned metal foil repeatedly on at least a part of the resin composition. At this time, the shape of the metal foil can be appropriately selected depending on the pitch and form of the electrodes.

  The metal foil used in the present invention is not particularly limited, but tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), An alloy of at least two metals selected from the group consisting of antimony (Sb), iron (Fe), aluminum (Al), gold (Au), germanium (Ge), and copper (Cu), or a simple substance of tin It is preferable.

  Among these, considering the melting temperature and mechanical properties, the metal foil is composed of Sn—Pb alloy, Sn—Bi alloy which is lead-free solder, Sn—Ag—Cu alloy, Sn—In alloy, Sn A solder foil made of an alloy containing Sn such as an alloy of -Ag is more preferable. When the Sn—Pb alloy is used, the content of tin is preferably 30% by weight or more and less than 100% by weight, more preferably 35% by weight or more and less than 100% by weight, and particularly preferably 40% by weight or more and less than 100% by weight. In the case of lead-free solder, the content of tin is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, and particularly preferably 25% by weight or more and less than 100% by weight. For example, Sn-Pb alloy is Sn63-Pb (melting point 183 ° C), and lead-free solder is Sn-3.0Ag-0.5Cu (melting point 217 ° C), Sn-3.5Ag (melting point 221 ° C) Sn-58Bi (melting point 139 ° C.), Sn-9.0Zn (melting point 199 ° C.), Sn-3.5Ag-0.5Bi-3.0In (melting point 193 ° C.), Au-20Sn (melting point 280 ° C.), etc. Is preferred.

The metal foil may be appropriately selected according to the heat resistance of the electronic member or semiconductor device to be connected. For example, in the connection between terminals in a semiconductor device, the melting point is 330 ° C. or lower (more preferably 300 ° C. or lower, particularly preferably 280 ° C. or lower, more preferably, in order to prevent the members of the semiconductor device from being damaged by thermal history. It is preferable to use a metal foil that is 260 ° C. or lower. In order to ensure the heat resistance of the semiconductor device after the connection between terminals, it is preferable to use a metal foil having a melting point of 100 ° C. or higher (more preferably 110 ° C. or higher, particularly preferably 120 ° C. or higher). In addition, melting | fusing point of metal foil can be measured with a differential scanning calorimeter (DSC).

  The thickness of the metal foil can be appropriately selected according to the gap between the opposing terminals, the distance between the centers of adjacent terminals, and the like. For example, in the case of connection between connection terminals such as a semiconductor chip, a substrate, and a semiconductor wafer in a semiconductor device, the thickness of the metal foil is preferably 0.5 μm or more, more preferably 3 μm or more, particularly preferably 5 μm or more, 100 micrometers or less are preferable, 50 micrometers or less are more preferable, and 20 micrometers or less are especially preferable. If the thickness of the metal foil is less than the lower limit, the number of unconnected terminals tends to increase due to insufficient solder or tin. On the other hand, if the thickness exceeds the upper limit, bridging occurs between adjacent terminals due to excessive solder or tin, and shorting easily occurs. There is a tendency.

  Examples of the method for producing the metal foil include a method of producing from a lump such as an ingot by rolling, and a method of forming the metal foil layer directly on the resin composition layer by vapor deposition, sputtering, plating, or the like. In addition, as a method for producing a metal foil having a repetitive pattern, for example, a method of punching a metal foil into a predetermined pattern, a method of forming a predetermined pattern by etching, etc., or using a shielding plate or a mask Examples thereof include a method of forming by vapor deposition, sputtering, plating, and the like.

  The content of the metal foil is preferably 5% by weight or more, more preferably 20% by weight or more, and particularly preferably 30% by weight or more with respect to the total weight of the conductive connecting material. Moreover, less than 100 weight% is preferable, 80 weight% or less is more preferable, and 70 weight% or less is especially preferable. If the content of the metal foil is less than the above lower limit, unconnected terminals may increase due to insufficient solder or tin. On the other hand, if the content of the metal foil exceeds the above upper limit, bridging is likely to occur between adjacent terminals due to excessive solder or tin.

  Or you may define content of metal foil with the volume ratio with respect to a conductive connection material. For example, the content of the metal foil is preferably 1% by volume or more, more preferably 5% by volume or more, and particularly preferably 10% by volume or more with respect to the conductive connection material. Moreover, 90 volume% or less is preferable, 80 volume% or less is more preferable, and 70 volume% or less is especially preferable. If the content of the metal foil is less than the above lower limit, unconnected terminals may increase due to insufficient solder or tin. On the other hand, if the content of the metal foil exceeds the above upper limit, bridging is likely to occur between adjacent terminals due to excessive solder or tin.

  In the present invention, the form of the conductive connection material can be appropriately selected according to the form of the resin composition. For example, when the resin composition is liquid, the resin composition is applied on both sides of a metal foil, or the resin composition is applied on a release substrate such as a polyester sheet, and semi-cured at a predetermined temperature (B-stage) For example, a film obtained by drying and forming a film and pasting metal foils together to form a film can be used as the conductive connection material. When the resin composition is solid, the resin composition varnish dissolved in an organic solvent is applied onto a release substrate such as a polyester sheet and dried at a predetermined temperature, and then bonded to a metal foil or vapor deposition, etc. A film formed using the above method can be used as a conductive connection material.

  Moreover, the conductive connection material of this invention and the metal foil used for this can also use what gave the embossing in order to improve a contact with a terminal.

The thickness of the conductive connecting material of the present invention is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, particularly preferably 5 μm or more, preferably 200 μm or less, more preferably 150 μm or less, and particularly preferably 100 μm or less. . When the thickness of the conductive connecting material is within the above range, the resin composition can be sufficiently filled in the gap between adjacent terminals. In addition, the mechanical adhesive strength after the resin component is cured or solidified and the electrical connection between the opposing terminals can be sufficiently ensured. In addition, it is possible to manufacture a connection terminal according to the purpose and application.

  Next, a method for manufacturing the conductive connecting material 10 with the back grind tape will be briefly described with reference to FIGS. For example, as shown in FIG. 3 (a), the conductive connecting material 2 is manufactured by applying a varnish mixed with a resin component onto a peeling substrate 21 such as a polyester sheet, drying at a predetermined temperature, A film-shaped resin composition 120 is produced on the release substrate 21 by forming a film. Next, as shown to a figure (3-b), two sheets of the resin composition 120 formed into a film on the peeling base material 21 are prepared, and metal foil is laminated | stacked with a hot roll on both sides of the metal foil 110. A three-layer conductive connecting material 2 made of resin composition 120 / metal foil 110 / resin composition 120 in which resin composition 120 is arranged on both surfaces of 110 can be produced. Moreover, the two-layered conductive connecting material 2 made of the resin composition 120 / the metal foil 110 can be produced by disposing the resin composition 120 on one surface of the metal foil 110 by the above-described laminating method. This was half-cut to obtain a circular conductive connecting material 2.

  Then, as shown in FIG. 4, the back grind tape 1, the conductive connection material is formed by peeling the release substrate 21 on one side and laminating the back grind tape 1 composed of the adhesive layer 12 and the substrate 11. 2 and the conductive connecting material 10 with the back grind tape comprised of the peeling base material 21 can be obtained.

  The back grind tape 1 is not particularly limited, and a resin varnish mixed with an adhesive component and, if necessary, additives such as an ultraviolet curing component and an ultraviolet initiator, is blended with polyester, polyethylene, polypropylene, polybutene, polybutadiene, chloride. It can be produced by applying a resin film such as vinyl or ethylene-methacrylic acid copolymer, a crosslinked film of these resins, and a film obtained by applying a silicone resin or the like to the surface of these resins and then performing a release treatment.

  The thickness of the back grind tape 1 formed in this manner is not particularly limited, but is preferably 10 μm or more, more preferably 20 μm or more, particularly preferably 30 μm or more, and preferably 500 μm or less, more preferably 400 μm or less. 300 μm or less is particularly preferable. When the thickness is less than the lower limit value, the effect as the back grind tape 1 may be reduced. When the thickness exceeds the upper limit value, it may be difficult to manufacture the product and the thickness accuracy may be reduced.

2. Next, a connection method between terminals according to the present invention will be described.
The connection method between the terminals of the present invention includes a case where a dicing sheet is newly adhered when separating a semiconductor wafer, and a case where the back grind tape according to the present invention has a dicing sheet function. The method is slightly different. Furthermore, the connection method is slightly different between the case where the resin composition of the conductive connection material is a curable resin composition and the case where it is a thermoplastic resin composition. Therefore, in the following, the case where the dicing sheet is newly bonded to connect the terminals, and the resin composition of the conductive connection material is a curable resin composition, the first embodiment is a thermoplastic resin composition. A case in which the back grinding tape according to the present invention has a dicing sheet function and the resin composition of the previous conductive connection material is a curable resin composition is referred to as the third embodiment. The case where it is a plastic resin composition is demonstrated for every embodiment as 4th Embodiment.

<< First Embodiment >>
In the embodiment in which the dicing sheet is newly bonded when the semiconductor wafer is separated into pieces, and the resin composition of the conductive connection material is a curable resin composition, the conductive connection material with the back grind tape is used. A conductive connecting material bonding step with a back grind tape for bonding the conductive connecting material and a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes, and polishing the surface of the semiconductor wafer opposite to the circuit surface A polishing step, a dicing sheet adhering step for adhering a dicing sheet to the surface opposite to the circuit surface of the semiconductor wafer, a peeling step for exfoliating the back grind tape, and the conductive connecting material adhered to each other Singulation process to obtain a semiconductor chip, and a pickup process to pick up the semiconductor chip to which the conductive connection material is bonded A mounting step of mounting a semiconductor chip to which the conductive connection material is bonded on a substrate, and a heating step of heating the conductive connection material at a temperature that is equal to or higher than the melting point of the metal foil and does not complete the curing of the resin composition. And a curing step for curing the resin composition.

  In this connection method, heat-melted solder or tin can be selectively aggregated between terminals to form a conductive region, and an insulating region made of a curable resin composition can be formed around the conductive region. As a result, insulation between adjacent terminals can be ensured and leakage current can be prevented, so that connection reliability of connection between terminals can be improved. In addition, even in a fine wiring circuit, electrical connection between a large number of terminals can be performed collectively. Furthermore, the mechanical strength of the conductive region or the insulating region can be increased by curing the curable resin composition.

  Hereinafter, preferred embodiments of the connection method between terminals of the first embodiment of the present invention will be described in detail with reference to the drawings, but the connection method of the present invention is not limited to these drawings.

(A) Adhesive process of conductive connecting material with back grind tape First, as shown in FIG. 5, the peeling base material 21 is peeled from the conductive connecting material 2, and the circuit surface 3 ′ of the semiconductor wafer 3 and the conductive connecting material 2 are separated. The semiconductor wafer 3 and the conductive connection material 10 with the back grind tape are laminated so as to be in contact with each other. The method for laminating the conductive connecting material 10 with the back grind tape on the semiconductor wafer 3 is not particularly limited, but can be performed by a laminator, temperature: 25 to 150 ° C., pressure: 0.1 to 1 MPa, speed: 0.00. It can laminate | stack on the conditions of 1-1 m / min.

(B) Polishing Step Next, as shown in FIG. 6, the base material 11 is in contact with the upper surface (the upper side in FIG. 6) of the polishing stage 4 of the polishing apparatus on the conductive connection material 10 with the back grind tape on which the semiconductor wafer 3 is mounted. As shown in FIG. Then, the surface opposite to the circuit surface of the semiconductor wafer 3 (upper side in the figure) is polished. The polishing apparatus is not particularly limited, and a commercially available apparatus can be used. Here, the thickness of the semiconductor wafer 3 after back grinding is not particularly limited, but is preferably about 30 to 600 μm.

(C) Dicing Sheet Bonding Step Next, as shown in FIG. 7, the dicing sheet 5 is placed on the semiconductor wafer so that the semiconductor wafer 3 and the dicing sheet 5 are in contact with the surface opposite to the circuit surface 3 ′ of the semiconductor wafer 3. Laminate. The method for laminating the dicing sheet 5 on the semiconductor wafer 3 is not particularly limited, but can be performed by a laminator, temperature: 25 to 150 ° C., pressure: 0.1 to 1 MPa, speed: 0.1 to 1 m / min. It is possible to laminate under the conditions. Here, as the dicing sheet, a commercially available dicing sheet can be used.

(D) Peeling Step Next, as shown in FIG. 8, peeling is performed at the interface between the conductive connecting material 2 and the back grind tape 1 to remove the back grind tape. At this time, the back grind tape may be peeled off after the adhesiveness to the conductive connecting material is reduced by irradiating the back grind tape with ultraviolet rays.

(E) Separation Step Next, as shown in FIG. 9, the dicing sheet 5 is placed on the dicer table 6 so as to be in contact with the upper surface (upper side in FIG. 9) of the dicer table 6. A wafer ring 7 is installed around the semiconductor wafer 3 to fix it. Then, the semiconductor wafer 3 is cut by the blade 8 to obtain the semiconductor chip 30 having the conductive connection material 2 as shown in FIG. At this time, the dicing sheet 5 has a buffering action and prevents the semiconductor chip 30 from being cracked or chipped when the semiconductor wafer 3 is cut.

(F) Pickup Step Next, as shown in FIG. 11, the dicing sheet 5 is stretched with an expanding device, and the semiconductor chips 30 having the conductive connecting material 2 separated into pieces are opened at a constant interval, and the semiconductor chip 30 and the dicing are separated. The semiconductor chip 30 having the conductive connection material 2 is picked up by peeling at the interface of the sheet 5.

(G) Mounting Step Next, as shown in FIG. 12, the terminal 31 of the semiconductor chip 30 is connected to the substrate 9 by using a flip chip bonder or the like for the semiconductor chip 30 having the conductive connection material 2 picked up in the pickup step. Is turned upside down so as to be on the terminal 91 side (lower side in FIG. 12B). Then, as shown in FIG. 12C, the semiconductor chip 30 having the conductive connection material 2 is placed on the substrate 9 so that the terminal 31 of the separated semiconductor chip 30 and the terminal 91 of the substrate 9 face each other. Mount.
A method for mounting the semiconductor chip 30 having the conductive connection material 2 on the substrate 9 is not particularly limited, but the temperature is 25 to 150 ° C., the load is 1 to 50 N, and the time is 1 to 30 seconds by a flip chip bonder. It can be laminated under certain conditions.
At this time, the surfaces of the terminals 31 and 91 may be subjected to treatments such as cleaning, polishing, plating, and surface activation as necessary in order to improve electrical connection.

(H) Heating step In the heating step, the conductive connecting material 2 disposed between the terminals in the mounting step is heated at a temperature equal to or higher than the melting point of the metal foil 110. The heating temperature only needs to be equal to or higher than the melting point of the metal foil 110. For example, by adjusting the heating time such as shortening the heating time, the range in which the solder or tin can move in the curable resin 120, that is, the “curable resin composition” The upper limit is not particularly limited as long as it does not complete the curing of the object. The heating temperature is preferably 5 ° C. or more higher than the melting point of the metal foil, more preferably 10 ° C. or more, more preferably 20 ° C. or more, and particularly preferably 30 ° C. or more.

  The heating temperature can be appropriately selected depending on the composition of the metal foil 110 and the curable resin composition 120 to be used, but is preferably 100 ° C or higher, more preferably 130 ° C or higher, particularly preferably 140 ° C or higher, 150 ° C. The above is most preferable. In order to prevent thermal degradation of the substrate or the like to be connected, the heating temperature is preferably 260 ° C. or lower, more preferably 250 ° C. or lower, and particularly preferably 240 ° C. or lower.

When the conductive connecting material 2 is heated at such a temperature, the metal foil 110 is melted, and the melted solder or tin can move in the curable resin composition 120. When the curable resin composition 120 includes a compound having a flux function, the surface oxide film of solder or tin is removed by the reducing action of the compound having the flux function included in the curable resin composition 120. Tin is in a state in which wettability is enhanced, and metal bonding is promoted, so that it easily aggregates between opposing terminals. On the other hand, since the surface oxide films of the terminals 31 and 91 are also removed by the reducing action of the compound having a flux function and the wettability is enhanced, metal bonding with solder or tin is facilitated. As a result, as shown in FIG. 13, a conductive region 130 is formed between the terminals, and the terminal 31 and the terminal 91 are electrically connected. On the other hand, the insulating region 140 is formed by filling the periphery of the conductive region with the curable resin composition. As a result, insulation between adjacent terminals is ensured, and a short circuit between adjacent terminals can be prevented.

In the connection method of the present invention, heating may be performed by applying pressure so as to reduce the distance between the opposing terminals. For example, the distance between the terminals facing each other can be controlled to be constant by heating and pressurizing the semiconductor chip 30 and the substrate 9 in FIG. It is possible to improve the electrical connection reliability between the terminals facing each other. Moreover, you may perform a mounting process and a heating process continuously with a flip chip bonder.
Furthermore, when heating or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

(I) Curing step In the connection method of the present invention, after forming the conductive region 130 and the insulating region 140 in the heating step, the insulating region 140 made of the curable resin composition is cured to form the insulating region. 140 is fixed. Thereby, electrical reliability and mechanical connection strength between the terminals can be sufficiently ensured. In particular, in the connection method of the present invention, since a curable resin composition having a high insulation resistance value is used, the insulation of the insulating region can be more sufficiently ensured.

  The curing temperature of the insulating region 140 made of the curable resin composition can be appropriately set according to the composition of the curable resin composition 120, but is at least 5 ° C. lower than the heating temperature in the heating step. It is particularly preferable that the temperature is at least 10 ° C. lower. Specifically, it is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, particularly preferably 130 ° C. or higher, and most preferably 150 ° C. or higher. Further, it is preferably 300 ° C. or lower, more preferably 260 ° C. or lower, particularly preferably 250 ° C. or lower, and most preferably 240 ° C. or lower. When the curing temperature is within the above range, the conductive connecting material 2 is not thermally decomposed, and the curable resin composition 120 can be sufficiently cured.

<< Second Embodiment >>
In the embodiment in which the dicing sheet is newly bonded when the semiconductor wafer is separated into pieces, and the resin composition of the conductive connection material is a thermoplastic resin composition, the conductive connection material with a back grind tape is used. Conductive connection material adhering step with back grind tape for adhering the conductive connection material and the circuit surface of the semiconductor wafer having the circuit surface provided with connection electrodes, and polishing for polishing the surface opposite to the circuit surface of the semiconductor wafer A dicing sheet bonding step for bonding a dicing sheet to a surface opposite to the circuit surface of the semiconductor wafer, a peeling step for peeling the back grind tape, and the conductive connection material with the back grind tape bonded Singulation process to obtain a semiconductor chip by picking up the semiconductor chip, and picking up the semiconductor chip to which the conductive connecting material is bonded. A pick-up step, a mounting step of mounting the semiconductor chip to which the conductive connection material is bonded on a substrate, and heating the conductive connection material at a temperature equal to or higher than the melting point of the metal foil and softening the resin composition A heating step for solidifying, and a solidifying step for solidifying the resin composition.

In the second embodiment, the process from the step of adhering the conductive connecting material with back grind tape to the mounting process is not particularly limited, but can be performed by the same method and conditions as in the first embodiment.
(A) Heating step The heating step is not particularly limited, but the conductive connecting material disposed between the terminals in the mounting step is heated at a temperature equal to or higher than the melting point of the metal foil 110. The heating temperature is preferably 5 ° C or higher than the melting point of the metal foil 110, more preferably 10 ° C or higher, more preferably 20 ° C or higher, and particularly preferably 30 ° C or higher. The heating temperature is equal to or higher than the melting point of the metal foil 110, and the thermoplastic resin composition is softened so that solder or tin can move in the thermoplastic resin, that is, the "thermoplastic resin composition softens" range, The upper limit is not particularly limited.

  The heating temperature can be appropriately selected depending on the metal foil 110 to be used and the composition of the thermoplastic resin composition. For example, it can be heated at the same heating temperature as that of the conductive connecting material including the curable resin composition and the metal foil 110.

  When the conductive connecting material 2 is heated at the above temperature, the metal foil 110 is melted, and the melted solder or tin can move in the thermoplastic resin composition 120. When the thermoplastic resin composition contains a compound having a flux function, the solder or tin surface oxide film is removed by the reducing action of the compound having the flux function contained in the thermoplastic resin composition. This is a state in which the wettability is enhanced, and metal bonding is promoted to easily aggregate between opposing terminals. On the other hand, since the surface oxide films of the terminals 31 and 91 are also removed by the reducing action of the compound having a flux function and the wettability is enhanced, metal bonding with solder or tin is facilitated. As a result, as shown in FIG. 13, a conductive region 130 is formed between the terminals, and the terminal 31 and the terminal 91 are electrically connected. On the other hand, the insulating region 140 is formed by filling the periphery of the conductive region with the thermoplastic resin composition. As a result, insulation between adjacent terminals is ensured, and a short circuit between adjacent terminals can be prevented.

(B) Solidification process In the connection method of this invention, after forming the electroconductive area | region 130 and the insulating area | region 140 by the said heating process, the thermoplastic resin composition is solidified and the insulating area | region 140 area | region is fixed. Thereby, electrical reliability and mechanical connection strength between the terminals can be sufficiently ensured.

  Solidification of a thermoplastic resin composition can be implemented by cooling and solidifying the thermoplastic resin composition heated at the said heating process. Cooling and solidification of the thermoplastic resin composition can be appropriately set according to the composition of the thermoplastic resin composition, and is not particularly limited, but may be a method by natural cooling, or blowing cold air, etc. The method may be used.

  The solidification temperature of the thermoplastic resin composition is not particularly limited, but is preferably lower than the melting point of the metal foil 110. More specifically, the solidification temperature of the thermoplastic resin composition is preferably 10 ° C. or more lower than the melting point of the metal foil 110, and particularly preferably 20 ° C. or lower. The solidification temperature of the thermoplastic resin composition is preferably 50 ° C. or higher, particularly preferably 60 ° C. or higher, and further preferably 100 ° C. or higher. When the solidification temperature of the thermoplastic resin composition is within the above range, the conductive region 130 can be reliably formed, and the insulating region 140 can have a desired heat resistance. For this reason, the insulation between adjacent terminals is ensured, and a short circuit between adjacent terminals can be more reliably prevented.

  According to the first embodiment and the second embodiment of the present invention, it is possible to protect the circuit surface of the semiconductor wafer in the polishing process of the semiconductor wafer and to reduce the warpage of the semiconductor wafer after polishing. In addition, it is possible to obtain good electrical connection between the connection terminals of the semiconductor chip and the circuit board and high insulation reliability between the adjacent terminals.

<< Third embodiment >>
In the embodiment in which the back grind tape according to the present invention has a dicing sheet function and the resin composition of the conductive connecting material is a curable resin composition when the semiconductor wafer is separated into pieces, the back grind tape An adhesion step of bonding the conductive connection material of the attached conductive connection material and a circuit surface of the semiconductor wafer having a circuit surface provided with connection electrodes; and a polishing step of polishing a surface opposite to the circuit surface of the semiconductor wafer; Singulation process for obtaining a semiconductor chip by separating the conductive connection material with the back grind tape, a pickup process for picking up the semiconductor chip to which the conductive connection material is bonded, and the conductive connection material Mounting step of mounting the semiconductor chip to which the substrate is bonded to the substrate, and the melting point of the metal foil is higher than the melting point, and the curing of the resin composition is completed Not including a heating step of heating the conductive connecting material at a temperature, and a curing step of curing the resin composition.

  In this connection method, heat-melted solder or tin can be selectively aggregated between terminals to form a conductive region, and an insulating region made of a curable resin composition can be formed around the conductive region. As a result, insulation between adjacent terminals can be ensured and leakage current can be prevented, so that connection reliability of connection between terminals can be improved. In addition, even in a fine wiring circuit, electrical connection between a large number of terminals can be performed collectively. Furthermore, the mechanical strength of the conductive region or the insulating region can be increased by curing the curable resin composition.

  Hereinafter, preferred embodiments of the connection method between terminals of the third embodiment of the present invention will be described in detail with reference to the drawings, but the connection method of the present invention is not limited to these drawings.

(A) Bonding process of conductive connecting material with back grind tape First, as shown in FIG. 14, the peeling substrate 21 is peeled from the conductive connecting material 2, and the circuit surface 3 ′ of the semiconductor wafer 3 and the conductive connecting material 2 are separated. The semiconductor wafer 3 and the conductive connection material 10 with the back grind tape are laminated so as to be in contact with each other. The method for laminating the conductive connecting material 10 with the back grind tape on the semiconductor wafer 3 is not particularly limited, but can be performed by a laminator, temperature: 25 to 150 ° C., pressure: 0.1 to 1 MPa, speed: 0.00. It can laminate | stack on the conditions of 1-1 m / min.

(B) Polishing Step Next, as shown in FIG. 15, the base material 11 is in contact with the upper surface (upper side in FIG. 15) of the polishing stage 4 of the polishing apparatus in the conductive connection material 10 with the back grind tape on which the semiconductor wafer 3 is mounted. As shown in FIG. Then, the surface opposite to the circuit surface of the semiconductor wafer 3 (upper side in the figure) is polished. The polishing apparatus is not particularly limited, and a commercially available apparatus can be used. Here, the thickness of the semiconductor wafer 3 after back grinding is not particularly limited, but is preferably about 30 to 600 μm.

(C) Separation Step Next, as shown in FIG. 16, the base material 11 is in contact with the upper surface (the upper side in FIG. 16) of the dicer table 6 in the conductive connection material 10 with the back grind tape on which the semiconductor wafer 3 is mounted. Next, the wafer ring 7 is installed around the semiconductor wafer 3 to fix the semiconductor wafer 3. Then, the semiconductor wafer 3 is cut by the blade 8 to obtain the semiconductor chip 30 having the conductive connection material 2 as shown in FIG. At this time, the conductive connecting material 10 with the back grind tape has a buffering action, and prevents the semiconductor chip 30 from being cracked or chipped when the semiconductor wafer 3 is cut.
Alternatively, the semiconductor wafer 3 and the wafer ring 7 may be attached in advance to the conductive connecting material 10 with a dicing sheet function and then placed on the dicer table 6.

(D) Pickup Step Next, as shown in FIG. 18, the back grind tape 1 is stretched with an expanding device, and the semiconductor chips 30 having the conductive connecting material 2 separated into pieces are opened at regular intervals. The semiconductor chip 30 having the conductive connection material 2 is picked up by peeling at the interface of the back grind tape 1.

(E) Mounting Step Next, as shown in FIG. 19, the semiconductor chip 30 having the conductive connection material 2 is mounted on the substrate 9 so that the terminals 31 of the separated semiconductor chip 30 and the terminals 91 of the substrate 9 face each other. Mount on top.
A method for mounting the semiconductor chip 30 having the conductive connection material 2 on the substrate 9 is not particularly limited, but the temperature is 25 to 150 ° C., the load is 1 to 50 N, and the time is 1 to 30 seconds by a flip chip bonder. It can be laminated under certain conditions.
At this time, the surfaces of the terminals 31 and 91 may be subjected to treatments such as cleaning, polishing, plating, and surface activation as necessary in order to improve electrical connection.

(F) Heating step In the heating step, the conductive connecting material 2 disposed between the terminals in the mounting step is heated at a temperature equal to or higher than the melting point of the metal foil 110. The heating temperature only needs to be equal to or higher than the melting point of the metal foil 110. For example, by adjusting the heating time such as shortening the heating time, the range in which the solder or tin can move in the curable resin 120, that is, the “curable resin composition” The upper limit is not particularly limited as long as it does not complete the curing of the object. The heating temperature is preferably 5 ° C. or more higher than the melting point of the metal foil, more preferably 10 ° C. or more, more preferably 20 ° C. or more, and particularly preferably 30 ° C. or more.

  The heating temperature can be appropriately selected depending on the composition of the metal foil 110 and the curable resin composition 120 to be used, but is preferably 100 ° C or higher, more preferably 130 ° C or higher, particularly preferably 140 ° C or higher, 150 ° C. The above is most preferable. In order to prevent thermal degradation of the substrate or the like to be connected, the heating temperature is preferably 260 ° C. or lower, more preferably 250 ° C. or lower, and particularly preferably 240 ° C. or lower.

  When the conductive connecting material 2 is heated at such a temperature, the metal foil 110 is melted, and the melted solder or tin can move in the curable resin composition 120. When the curable resin composition 120 includes a compound having a flux function, the surface oxide film of solder or tin is removed by the reducing action of the compound having the flux function included in the curable resin composition 120. Tin is in a state in which wettability is enhanced, and metal bonding is promoted, so that it easily aggregates between opposing terminals. On the other hand, since the surface oxide films of the terminals 31 and 91 are also removed by the reducing action of the compound having a flux function and the wettability is enhanced, metal bonding with solder or tin is facilitated. As a result, as shown in FIG. 20, a conductive region 130 is formed between the terminals, and the terminal 31 and the terminal 91 are electrically connected. On the other hand, the insulating region 140 is formed by filling the periphery of the conductive region with the curable resin composition. As a result, insulation between adjacent terminals is ensured, and a short circuit between adjacent terminals can be prevented.

In the connection method of the present invention, heating may be performed by applying pressure so as to reduce the distance between the opposing terminals. For example, the distance between the terminals facing each other can be controlled to be constant by heating and pressurizing the semiconductor chip 30 and the substrate 9 in FIG. It is possible to improve the electrical connection reliability between the terminals facing each other. Moreover, you may perform a mounting process and a heating process continuously with a flip chip bonder.
Furthermore, when heating or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

(G) Curing step In the connection method of the present invention, after forming the conductive region 130 and the insulating region 140 in the heating step, the insulating region 140 made of a curable resin composition is cured to form the insulating region. 14
0 is fixed. Thereby, electrical reliability and mechanical connection strength between the terminals can be sufficiently ensured. In particular, in the connection method of the present invention, since a curable resin composition having a high insulation resistance value is used, the insulation of the insulating region can be more sufficiently ensured.

  The curing temperature of the insulating region 140 made of the curable resin composition can be appropriately set according to the composition of the curable resin composition 120, but is at least 5 ° C. lower than the heating temperature in the heating step. It is particularly preferable that the temperature is at least 10 ° C. lower. Specifically, it is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, particularly preferably 130 ° C. or higher, and most preferably 150 ° C. or higher. Further, it is preferably 300 ° C. or lower, more preferably 260 ° C. or lower, particularly preferably 250 ° C. or lower, and most preferably 240 ° C. or lower. When the curing temperature is within the above range, the conductive connecting material 2 is not thermally decomposed, and the curable resin composition 120 can be sufficiently cured.

<< Fourth Embodiment >>
In the embodiment in which the back grind tape according to the present invention has a dicing sheet function and the resin composition of the conductive connecting material is a thermoplastic resin composition when the semiconductor wafer is separated into individual pieces, the back grind tape A conductive connection material bonding step with a back grind tape for bonding the conductive connection material of the conductive connection material with a conductive surface and a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes; A polishing step for polishing the surface, an individualization step for obtaining a semiconductor chip by separating the conductive connection material with the back grind tape, and a pickup for picking up the semiconductor chip to which the conductive connection material is bonded A mounting step of mounting a semiconductor chip to which the conductive connection material is bonded on a substrate, a melting point of the metal foil or higher There, and includes a heating process of the resin composition to heat said electrically conductive connecting material at a temperature which softens the solidifying step of solidifying the resin composition.

In the fourth embodiment, the process from the step of adhering the conductive connecting material with back grind tape to the mounting process is not particularly limited, but can be performed by the same method and conditions as in the third embodiment. Moreover, although a heating process and a solidification process are not necessarily limited, it can carry out with the method and conditions similar to 2nd embodiment.

According to the third embodiment and the fourth embodiment of the present invention, it is possible to protect the circuit surface of the semiconductor wafer in the polishing process of the semiconductor wafer and to reduce the warpage of the semiconductor wafer after polishing. In addition, it is possible to obtain good electrical connection between the connection terminals of the semiconductor chip and the circuit board and high insulation reliability between the adjacent terminals.

3. The present invention also includes an electronic member with a conductive connection material formed by bonding the conductive connection material with a back grind tape of the present invention to the electrical connection surface of the electronic member. In the electronic member with a conductive connection material of the present invention, the adhesive surface of the conductive connection material with the electrical connection surface of the electronic member is preferably a resin composition layer. The resin composition layer may be directly bonded to the electrical connection surface of the electronic member, or may be bonded via an adhesive layer. The electronic members with the conductive connection material of the present invention are bonded to each other, or the electronic members with the conductive connection material of the present invention are bonded to the electrical connection surfaces of the other electronic members and thermocompression bonded so that the electronic members are electrically connected. Can be connected.
In the present invention, a semiconductor wafer, a semiconductor chip, a rigid substrate, a flexible substrate, and other electrical devices in which electronic members are electrically connected using the conductive connection material with a back grind tape of the present invention thus obtained are provided. Also includes electronic components.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example, this invention is not limited to this.

[Examples 1 to 4]
(1) Preparation of curable resin composition Each component shown in Table 1 was dissolved in methyl ethyl ketone (MEK) to obtain a resin composition varnish having a resin solid content of 40%. The obtained varnish was applied to a polyester sheet (peeling substrate) using a comma coater and dried at 90 ° C. for 5 minutes to obtain a curable resin composition having a film thickness of 30 μm.

(2) Production of conductive connection material The untreated product of the obtained film-like curable resin composition was applied to both surfaces of the solder foil shown in Table 1 under the conditions of 60 ° C., 0.3 MPa, and 0.3 m / min. Lamination was performed to produce a conductive connecting material with a double-sided release substrate having a thickness of 70 μm.

(3) Production of Back Grinding Tape Cleartech CT-H717 (manufactured by Kuraray) was extruded with an extruder to form a film having a thickness of 100 μm, and the surface was subjected to corona treatment to obtain a base film. Next, a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 50% by weight of 2-ethylhexyl acrylate, 10% by weight of butyl acrylate, 37% by weight of vinyl acetate, and 3% by weight of 2-hydroxyethyl methacrylate. The polymer was peeled and applied to a 38 μm thick polyester film (corresponding to the cover film of the adhesive layer) so that the thickness after drying was 10 μm and dried at 80 ° C. for 5 minutes to obtain an adhesive layer. . Thereafter, this pressure-sensitive adhesive layer was laminated on the corona-treated surface of the substrate film described above to produce a back grind tape.

(4) Manufacture of conductive connection material with back grind tape Peel off the release substrate on one side of the above-mentioned conductive connection material with double-sided release substrate, and then remove the conductive connection material from the same outer diameter (circular shape) of an 8-inch silicon wafer. ) And the conductive connecting material other than the half-cut in a circular shape was removed. Then, the curable resin composition of the conductive connection material and the back grind tape are opposed to each other and bonded under the conditions of 80 ° C., 0.3 MPa, 2 m / min, and the layer structure of the back grind tape / conductive connection material / release substrate is formed. A conductive connecting material with a back grind tape was produced.

(5) Connection between terminals Peel off the base material of the conductive connection material with back grind tape, and paste the conductive connection material surface to the circuit surface of an 8-inch, 725 μm thick silicon wafer at a temperature of 60 ° C. and a pressure of 0.3 MPa. A silicon wafer with a conductive connecting material with a back grind tape was obtained. As a silicon wafer, it consists of a circuit layer (copper circuit, thickness 12 μm) and is formed by applying Ni / Au plating (thickness 3 μm) on the copper circuit (terminal diameter 100 μm, distance between centers of adjacent terminals 300 μm) The thing which has was used. Then, the surface opposite to the circuit surface of the back grind tape was fixed to the polishing stage of the polishing apparatus, and polishing was performed until the thickness of the silicon wafer became 725 μm to 100 μm.
Thereafter, this wafer was placed so that the back grind tape and the upper surface of the dicer table were in contact with each other, and a dicing saw was used to make a 10 mm × 10 mm square semiconductor chip at a spindle rotation speed of 30,000 rpm and a cutting speed of 50 mm / sec. Dicing into pieces (dividing into pieces). Next, the conductive connecting material with the back grind tape was pushed up from the back surface and peeled off at the interface between the back grind tape and the conductive connecting material to obtain a semiconductor chip having the conductive connecting material. This semiconductor chip is mounted on a FR-4 substrate (base material thickness 0.1 mm, circuit layer: copper 12 μm, NI / Au plating 3 μm, terminal diameter 100 μm, distance between centers of adjacent terminals 300 μm), flip chip bonder After aligning the semiconductor chip terminals and the FR-4 substrate terminals using “DB200”), the semiconductor chip is mounted on the FR-4 substrate under the conditions shown in Table 1. did. Furthermore, pressure bonding was performed under the conditions shown in Table 1, and the semiconductor chip and the terminals of the FR-4 substrate were connected. Thereafter, the laminated body in which the semiconductor chip and the terminal of the FR-4 substrate are connected is heated at 180 ° C. for 1 hour to cure the curable resin composition, the semiconductor chip and the terminal of the FR-4 substrate are connected, A laminate in which the curable resin composition was cured was obtained.

  In the laminates obtained in the examples, the connection resistance between the terminals facing each other, the conduction path forming property, and the presence or absence of solder particles remaining in the region other than the conduction path were evaluated by the method described later.

[1] Connection resistance The connection resistance is the resistance between the terminals facing each other in the laminate (resistance meter: “Digital Multimeter VOA7510” manufactured by Iwasaki Tsushinki Co., Ltd.), measurement probe: “manufactured by Hioki Electric Co., Ltd.” 12 points were measured with a pin-type lead 9771 "). The case where the average value was less than 30 mΩ was determined as “A”, and the case where the average value was 30 mΩ or more was determined as “B”.

[2] Conductive path forming property For 10 pairs of terminals facing each other in the laminate, the cross section between the terminals was observed with a scanning electron microscope (SEM) (“JSM-7401F” manufactured by JEOL Ltd.), and all 10 pairs were observed. "A" indicates that the cylindrical conductive path is formed by soldering in "B", and "B" indicates that there is a terminal in which no conductive path is formed even in one set, and short contacts with the adjacent terminals. The case was determined as “C”.

[3] Presence / absence of residual solder A cross section of the laminate is observed with a scanning electron microscope (SEM) (manufactured by JEOL Ltd., model number “JSM-7401F”) to form a conduction path between terminals facing all solder. "A" when contributing to the conductive path, and "B" when solder remains in the resin (insulating area) other than between the opposing terminals (conductive area) without contributing to the formation of the conduction path Judged.

The results are shown in Table 1.

The resin composition components and solder foils in Table 1 were as shown below.
Epoxy resin: bisphenol A type epoxy resin, “EPICLON-840S” manufactured by Dainippon Ink and Chemicals, epoxy equivalent of 185 g / eq
Curing agent: phenol novolac, “PR-53647” manufactured by Sumitomo Bakelite Co., Ltd.
Film-forming resin: modified biphenol type phenoxy resin, “YX-6654” manufactured by Japan Epoxy Resin Co., Ltd., weight average molecular weight 39,000
Compound having flux function 1: Sebacic acid, “Sebacic acid” manufactured by Tokyo Chemical Industry Co., Ltd.
Compound 2 having flux function: gentisic acid, “gentisic acid” manufactured by Midori Chemical Co., Ltd. Compound 3: compound having phenol function, “Phenolphthalin” manufactured by Tokyo Chemical Industry Co., Ltd.
Silane coupling agent: 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, “KBM-303” manufactured by Shin-Etsu Chemical Co., Ltd.
Imidazole: 2-Phenyl-4-methylimidazole, “Cureazole 2P4MZ” manufactured by Shikoku Chemicals Co., Ltd.
Solder foil A: Sn / Pb = 63/37 (melting point: 183 ° C.), thickness 10 μm
Solder foil B: Sn / Ag / Cu = 96.5 / 3.0 / 0.5 (melting point: 217 ° C.), thickness 10 μm

  As is apparent from Table 1, a conductive connecting material with a back grind tape capable of obtaining good electrical connection between connecting terminals and high insulation reliability between adjacent terminals was obtained. In addition, the circuit surface of the semiconductor wafer can be protected in the semiconductor wafer polishing step, and the warpage of the semiconductor wafer after polishing can be reduced.

  The conductive connecting material with a back grind tape of the present invention can be used when connecting between terminals of a semiconductor chip and a circuit board. By using the conductive connecting material with a back grind tape of the present invention, it is possible to protect the circuit surface of the semiconductor wafer in the polishing process of the semiconductor wafer and to reduce the warpage of the semiconductor wafer after polishing. Providing a conductive connection material with a back-grind tape that provides good electrical connection between the connection terminals of the circuit board and high insulation reliability between adjacent terminals, and is excellent in the productivity of electrical and electronic components can do.

DESCRIPTION OF SYMBOLS 1 Back grind tape 2 Conductive connection material 3 Semiconductor wafer 3 'Circuit surface 4 Polishing stage 5 Dicing sheet 6 Dicer table 7 Wafer ring 8 Blade 9 Substrate 91 Terminal 10 Conductive connection material 11 with back grind tape Base material 12 Adhesive layer 21 Peeling Base material 30 Semiconductor chip 31 Terminal 110 Metal foil 120 Resin composition 130 Conductive region 140 Insulating region 150 Metal foil layer 160 Resin composition layer

Claims (13)

A conductive connecting material with a back grind tape formed by laminating a back grind tape and a conductive connecting material, wherein the conductive connecting material is composed of a resin composition and a metal foil selected from solder foil or tin foil. A conductive connecting material with a back grind tape, characterized by having a laminated structure. 2. With backgrind tape according to claim 1, wherein a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes and the conductive connection material of the conductive connection material with backgrind tape are used by bonding. Conductive connection material. The conductive connection material with a back grind tape according to claim 1, wherein a release film is provided between the back grind tape and the conductive connection material. The conductive connection material with a back grind tape according to any one of claims 1 to 3, wherein the resin composition contains a compound having a flux function. The conductive connection material with a back grind tape according to claim 4, wherein the compound having the flux function has a phenolic hydroxyl group and / or a carboxyl group. The conductive connection material with a back grind tape according to any one of claims 1 to 5, wherein the conductive connection material includes a laminated structure composed of a resin composition layer / metal foil layer / resin composition layer. The conductive connection material with a back grind tape according to any one of claims 1 to 5, wherein the conductive connection material includes a laminated structure composed of a resin composition layer / metal foil layer. Adhesion step of adhering the conductive connection material of the conductive connection material with a back grind tape according to any one of claims 1 to 7 and a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes;
A polishing step of polishing a surface opposite to the circuit surface of the semiconductor wafer;
A singulation process for obtaining a semiconductor chip by dividing the conductive connecting material with the back grind tape into a piece,
A pickup step of picking up a semiconductor chip to which the conductive connecting material is bonded;
A mounting step of mounting the semiconductor chip to which the conductive connection material is bonded on a substrate;
A heating step of heating the conductive connection material at a temperature that is equal to or higher than the melting point of the metal foil and does not complete the curing of the resin composition;
And a curing step for curing the resin composition. A conductive material with a back grind tape for adhering the conductive connecting material of the conductive connecting material with a back grind tape according to any one of claims 1 to 7 to a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes. Connecting material bonding process;
A polishing step of polishing a surface opposite to the circuit surface of the semiconductor wafer;
A singulation process for obtaining a semiconductor chip by dividing the conductive connecting material with the back grind tape into a piece,
A pickup step of picking up a semiconductor chip to which the conductive connecting material is bonded;
A mounting step of mounting the semiconductor chip to which the conductive connection material is bonded on a substrate;
A heating step of heating the conductive connecting material at a temperature equal to or higher than the melting point of the metal foil and the resin composition softening;
A method for connecting terminals, comprising: a solidifying step of solidifying the resin composition. The conductive connection with back grind which adhere | attaches the conductive connection material of the conductive connection material with a back grind tape of any one of Claims 1-7, and the circuit surface of the semiconductor wafer which has the circuit surface in which the connection electrode was provided. A material bonding process;
A polishing step of polishing a surface opposite to the circuit surface of the semiconductor wafer;
A dicing sheet bonding step of bonding a dicing sheet to a surface opposite to the circuit surface of the semiconductor wafer;
A peeling step of peeling the back grind tape;
A singulation step of obtaining a semiconductor chip by dividing into pieces in a state where the conductive connection material is bonded,
A pickup step of picking up a semiconductor chip to which the conductive connecting material is bonded;
A mounting step of mounting the semiconductor chip to which the conductive connection material is bonded on a substrate;
A heating step of heating the conductive connection material at a temperature that is equal to or higher than the melting point of the metal foil and does not complete the curing of the resin composition;
And a curing step for curing the resin composition. A conductive material with a back grind tape for adhering the conductive connecting material of the conductive connecting material with a back grind tape according to any one of claims 1 to 7 to a circuit surface of a semiconductor wafer having a circuit surface provided with connection electrodes. Connecting material bonding process;
A polishing step of polishing a surface opposite to the circuit surface of the semiconductor wafer;
A dicing sheet bonding step of bonding a dicing sheet to a surface opposite to the circuit surface of the semiconductor wafer;
A peeling step of peeling the back grind tape;
A singulation process for obtaining a semiconductor chip by dividing the conductive connecting material with the back grind tape into a piece,
A pickup step of picking up a semiconductor chip to which the conductive connecting material is bonded;
A mounting step of mounting the semiconductor chip to which the conductive connection material is bonded on a substrate;
A heating step of heating the conductive connecting material at a temperature equal to or higher than the melting point of the metal foil and the resin composition softening;
A method for connecting terminals, comprising: a solidifying step of solidifying the resin composition. An electronic member with a conductive connection material, wherein the conductive connection material with a back grind tape according to any one of claims 1 to 7 is bonded to a circuit surface of a semiconductor wafer having a circuit surface on which connection electrodes are provided. An electrical / electronic component in which electronic members are electrically connected using the conductive connection material with a back grind tape according to any one of claims 1 to 7.

Images