JP2011082504A - Substrate for power module, substrate for power module with heat sink, power module, and method of manufacturing substrate for power module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate for power module that has metal plates and a ceramic substrate reliably joined together and is high in heat cycle reliability, and to provide a power module including the substrate for power module, and a method of manufacturing the substrate for power module. <P>SOLUTION: The substrate 10 for power module has the metal plates 12 and 13, made of aluminum, stacked and joined on surfaces of the ceramic substrate 11, wherein one or more additional elements selected out of Zn, Ge, Ag, Mg, Ca, Ga, and Li are solid-dissolved in the metal plates 12 and 13 in addition to Si, and a total of Si concentrations and concentrations of the additional elements near interfaces of the metal plates 12 and 13 with the ceramic substrate 11 is set to be 0.05 to 5 mass%. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a power module substrate used in a semiconductor device for controlling a large current and a high voltage, a power module substrate with a heat sink, a power module including the power module substrate, and a method for manufacturing the power module substrate. It is.

Among semiconductor elements, a power element for supplying power has a relatively high calorific value. Therefore, as a substrate on which the power element is mounted, for example, as shown in Patent Document 1, an Al (AlN (aluminum nitride)) ceramic substrate is made of Al ( A power module substrate in which a metal plate of (aluminum) is bonded via a brazing material is used.
The metal plate is formed as a circuit layer, and a power element (semiconductor element) is mounted on the metal plate via a solder material.
In addition, a metal plate made of Al or the like is bonded to the lower surface of the ceramic substrate to form a metal layer for heat dissipation, and the entire power module substrate is bonded to the heat sink via this metal layer. Yes.

  As a means for forming a circuit layer, in addition to a method of forming a circuit pattern on a metal plate after bonding the metal plate to a ceramic substrate, for example, as disclosed in Patent Document 2, a circuit pattern is previously provided. There has been proposed a method of joining a metal piece formed in a shape to a ceramic substrate.

  Here, in order to obtain good bonding strength between the circuit layer and the metal plate as the metal layer and the ceramic substrate, for example, the following Patent Document 3 discloses a technique in which the surface roughness of the ceramic substrate is less than 0.5 μm. Has been.

JP 2003-086744 A JP 2008-311294 A Japanese Patent Laid-Open No. 3-234045

However, when the metal plate is bonded to the ceramic substrate, there is a disadvantage that a sufficiently high bonding strength cannot be obtained even if the surface roughness of the ceramic substrate is simply reduced, and the reliability cannot be improved. For example, even if the surface of the ceramic substrate is subjected to a honing process with Al ₂ O ₃ particles in a dry manner and the surface roughness is set to Ra = 0.2 μm, interface peeling may occur in the peeling test. I understood. Further, even when the surface roughness was set to Ra = 0.1 μm or less by the polishing method, there was a case where the interface peeling occurred in the same manner.

  In particular, power modules have recently been reduced in size and thickness, and the usage environment has become stricter, and the amount of heat generated from electronic components such as mounted semiconductor elements tends to increase. Thus, it is necessary to dispose the power module substrate on the heat sink. In this case, since the power module substrate is constrained by the heat radiating plate, a large shearing force acts on the bonding interface between the metal plate and the ceramic substrate at the time of thermal cycle loading. There is a demand for improvement in bonding strength and reliability between the metal plate and the metal plate.

  The present invention has been made in view of the above-described circumstances, in which a metal plate and a ceramic substrate are securely bonded to each other, a power module substrate having a high heat cycle reliability, a power module substrate with a heat sink, and the power module. It is an object of the present invention to provide a power module including a power board and a method for manufacturing the power module board.

  In order to solve such problems and achieve the above object, the power module substrate of the present invention is a power module substrate in which a metal plate made of aluminum is laminated and bonded to the surface of a ceramic substrate. In addition to Si, the metal plate contains one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga and Li in solid solution. Among them, the total concentration of Si and the additive element in the vicinity of the interface with the ceramic substrate is set in a range of 0.05% by mass or more and 5% by mass or less.

In the power module substrate having this configuration, in addition to Si, one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga and Li are dissolved in the metal plate. Therefore, the bonding interface side portion of the metal plate is strengthened by solid solution. Thereby, the fracture | rupture in a metal plate part can be prevented and joining reliability can be improved.
Here, since the total concentration of Si and the additive element in the vicinity of the interface with the ceramic substrate in the metal plate is 0.05% by mass or more, it is ensured that the bonding interface side portion of the metal plate is solid solution. Can be strengthened. In addition, since the total concentration of Si and the additive element in the vicinity of the interface with the ceramic substrate in the metal plate is 5% by mass or less, the strength of the bonding interface of the metal plate is prevented from becoming excessively high. When the cooling cycle is applied to the power module substrate, the thermal stress can be absorbed by the metal plate, and cracking of the ceramic substrate can be prevented.

Here, the ceramic substrate is made of AlN or Al ₂ O ₃ , and the Si concentration is 5 times or more of the Si concentration in the metal plate at the bonding interface between the metal plate and the ceramic substrate. A high concentration part may be formed.
In this case, since a Si high concentration portion in which the Si concentration is 5 times or more than the Si concentration in the metal plate is formed at the bonding interface between the metal plate and the ceramic substrate, Si present at the bonding interface is formed. The bonding strength between the ceramic substrate made of AlN or Al ₂ O ₃ and the metal plate made of aluminum is improved by the atoms. Here, the Si concentration in the metal plate is the Si concentration in a portion of the metal plate that is away from the joint interface by a certain distance (for example, 50 nm or more).

Further, the ceramic substrate is made of AlN or Si ₃ N ₄ , and the oxygen concentration is higher than the oxygen concentration in the metal plate and the ceramic substrate at the bonding interface between the metal plate and the ceramic substrate. A high oxygen concentration portion may be formed, and the thickness of the high oxygen concentration portion may be 4 nm or less.
In this case, an oxygen high concentration portion in which the oxygen concentration is higher than the oxygen concentration in the metal plate and the ceramic substrate is formed at the bonding interface between the ceramic substrate made of AlN or Si ₃ N ₄ and the metal plate made of aluminum. Since it is formed, the bonding strength between the ceramic substrate made of AlN or Si ₃ N ₄ and the metal plate made of aluminum is improved by oxygen present at the bonding interface. Furthermore, since the thickness of the high oxygen concentration portion is 4 nm or less, the occurrence of cracks in the high oxygen concentration portion due to stress when a thermal cycle is applied is suppressed.
Here, the oxygen concentration in the metal plate and the ceramic substrate is an oxygen concentration in a portion of the metal plate and the ceramic substrate that is away from the bonding interface by a certain distance (for example, 50 nm or more).

A power module substrate with a heat sink according to the present invention includes the above-described power module substrate and a heat sink that cools the power module substrate.
According to the power module substrate with a heat sink having this structure, since the heat module for cooling the power module substrate is provided, the heat generated in the power module substrate can be efficiently cooled by the heat sink.

A power module according to the present invention includes the power module substrate described above and an electronic component mounted on the power module substrate.
According to the power module having this configuration, the bonding strength between the ceramic substrate and the metal plate is high, and the reliability can be drastically improved even when the usage environment is severe.

The method for manufacturing a power module substrate of the present invention is a method for manufacturing a power module substrate in which a metal plate made of aluminum is laminated and bonded to the surface of a ceramic substrate, the bonding surface of the ceramic substrate and the metal In addition to Si, one or more additional elements selected from Zn, Ge, Ag, Mg, Ca, Ga, and Li are fixed to at least one of the joining surfaces of the plates, and Si and the additional elements are fixed. A fixing step of forming a fixing layer containing, a stacking step of stacking the ceramic substrate and the metal plate via the fixing layer, and pressing the stacked ceramic substrate and the metal plate in the stacking direction By heating and forming a molten metal region at the interface between the ceramic substrate and the metal plate, and solidifying the molten metal region Anda solidification step of bonding the metal plate and the ceramic substrate, in the fixing step, the interface between the ceramic substrate and the metal plate, the Si and the additive element, 0.1 mg / cm ² or more 10 mg / cm ² or less, and in the heating step, by diffusing Si and the additive element of the fixing layer to the metal plate side, the interface between the ceramic substrate and the metal plate, It is characterized by forming a molten metal region.

According to the method for manufacturing a power module substrate having this configuration, at least one of the bonding surface of the ceramic substrate and the bonding surface of the metal plate has Zn, Ge, Ag, Mg, Ca, Ga, and Si in addition to Si. A bonding interface between the metal plate and the ceramic substrate is provided, which includes a fixing step of fixing one or more additional elements selected from Li and forming a fixing layer containing Si and the additional elements. In addition to Si, one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga, and Li are interposed. Here, since Si and elements such as Zn, Ge, Ag, Mg, Ca, Ga, and Li are elements that lower the melting point of aluminum, they are formed at the interface between the metal plate and the ceramic substrate at a relatively low temperature. A molten metal region can be formed.
Therefore, it is possible to firmly bond the ceramic substrate and the metal plate even if they are bonded under relatively low temperature and short time bonding conditions.

  Further, in the heating step, by diffusing Si of the fixed layer and one or more additional elements selected from Zn, Ge, Ag, Mg, Ca, Ga and Li toward the metal plate side. The molten metal region is formed at the interface between the ceramic substrate and the metal plate, and the molten metal region is solidified to join the metal plate and the ceramic substrate. There is no need to use it, and it is possible to manufacture a power module substrate in which the metal plate and the ceramic substrate are reliably bonded at low cost.

  Thus, since the ceramic substrate and the metal plate can be joined without using a brazing material foil, it is not necessary to perform an alignment operation or the like of the brazing material foil. Even when the formed metal piece is bonded to the ceramic substrate, troubles due to misalignment can be prevented in advance.

In the fixing step, the amount of Si and the additive element fixed at the interface between the ceramic substrate and the metal plate is set to 0.1 mg / cm ² or more. The molten metal region can be reliably formed, and the ceramic substrate and the metal plate can be firmly bonded.
Furthermore, since the fixed amount of Si and the additional element interposed at the interface between the ceramic substrate and the metal plate is 10 mg / cm ² or less, it is possible to prevent cracks from occurring in the fixed layer, A molten metal region can be reliably formed at the interface between the substrate and the metal plate. Furthermore, it is possible to prevent Si and the additive element from excessively diffusing to the metal plate side and excessively increasing the strength of the metal plate near the interface. Therefore, when a cooling cycle is loaded on the power module substrate, the thermal stress can be absorbed by the metal plate, and cracking of the ceramic substrate can be prevented.

Furthermore, in the fixing step, Si and the additive element are interposed in the interface between the ceramic substrate and the metal plate within a range of 0.1 mg / cm ² or more and 10 mg / cm ² or less. It is possible to manufacture a power module substrate in which the total concentration of Si and the additive element in the vicinity of the interface with the ceramic substrate in the plate is in the range of 0.05% by mass or more and 5% by mass or less.

  In addition, since the fixing layer is formed directly on the metal plate and the ceramic substrate, the oxide film is formed only on the surface of the metal plate. As a result, the total thickness of the oxide film present at the interface between the metal plate and the ceramic substrate is reduced compared to the case where the brazing material foil having the oxide film formed on both sides is used, so that the yield of initial bonding can be improved. it can.

In addition, although it is set as the structure which adheres Si and the said additional element directly to at least one among the joining surface of the said ceramic substrate and the joining surface of the said metal plate, from a viewpoint of productivity, Si and said addition are added to the joining surface of a metal plate. It is preferable to fix the elements.
In addition, Si and the additive element may be individually fixed to at least one of the bonding surface of the ceramic substrate and the bonding surface of the metal plate to form the Si layer and the additive element layer. Alternatively, Si and the additional element may be simultaneously fixed to at least one of the bonding surface of the ceramic substrate and the bonding surface of the metal plate to form a fixed layer of Si and the additional element.

Here, in the fixing step, it is preferable that Al is fixed together with Si and the additive element.
In this case, since Al is fixed together with Si and the additive element, the formed fixed layer contains Al, and in the heating process, the fixed layer is preferentially melted to ensure the molten metal region. Thus, the ceramic substrate and the metal plate can be firmly bonded. Moreover, oxidation of oxidation active elements, such as Mg, Ca, Li, can be prevented. In order to fix Al together with Si and the additive element, Si and the additive element and Al may be vapor-deposited simultaneously, or sputtering may be performed using an alloy of Si, the additive element and Al as a target. Further, Si and additive elements and Al may be laminated.

Further, the fixing step may include at least one of a bonding surface of the ceramic substrate and a bonding surface of the metal plate by plating, vapor deposition, CVD, sputtering, cold spray, or application of paste and ink in which powder is dispersed. It is preferable to fix Si and the additive element on one side.
In this case, Si and the additive element are applied to the bonding surface of the ceramic substrate and the bonding surface of the metal plate by plating, vapor deposition, CVD, sputtering, cold spray, or application of paste and ink in which powder is dispersed. Since it is securely fixed to at least one of them, Si and the additive element can be reliably interposed at the bonding interface between the ceramic substrate and the metal plate. In addition, it is possible to accurately adjust the amount of Si and the additive element to be fixed, and it is possible to reliably form the molten metal region and firmly bond the ceramic substrate and the metal plate.

  According to the present invention, a metal plate and a ceramic substrate are securely bonded to each other, and a power module substrate having a high heat cycle reliability, a power module substrate with a heat sink, a power module including the power module substrate, and the power module It is possible to provide a method for manufacturing a manufacturing substrate.

It is a schematic explanatory drawing of the power module using the board | substrate for power modules which is the 1st Embodiment of this invention. It is explanatory drawing which shows Si density | concentration and additive element density | concentration of the circuit layer and metal layer of the board | substrate for power modules which are the 1st Embodiment of this invention. It is a schematic diagram of the joining interface of the circuit layer of the board | substrate for power modules which is the 1st Embodiment of this invention, a metal layer (metal plate), and a ceramic substrate. It is a flowchart which shows the manufacturing method of the board | substrate for power modules which is the 1st Embodiment of this invention. It is explanatory drawing which shows the manufacturing method of the board | substrate for power modules which is the 1st Embodiment of this invention. It is explanatory drawing which shows the joining interface vicinity of the metal plate and ceramic substrate in FIG. It is explanatory drawing which shows Si density | concentration and additive element density | concentration of the circuit layer and metal layer of the board | substrate for power modules which are the 2nd Embodiment of this invention. It is the schematic diagram of the joining interface of the circuit layer of the board | substrate for power modules which is the 2nd Embodiment of this invention, a metal layer (metal plate), and a ceramic substrate. It is a flowchart which shows the manufacturing method of the board | substrate for power modules which is the 2nd Embodiment of this invention. It is explanatory drawing which shows the manufacturing method of the board | substrate for power modules which is the 2nd Embodiment of this invention.

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 shows a power module substrate, a power module substrate with a heat sink, and a power module according to the first embodiment of the present invention.
The power module 1 includes a power module substrate 10 on which a circuit layer 12 is disposed, a semiconductor chip 3 bonded to the surface of the circuit layer 12 via a solder layer 2, and a heat sink 4. Here, the solder layer 2 is made of, for example, a Sn—Ag, Sn—In, or Sn—Ag—Cu solder material. In the present embodiment, a Ni plating layer (not shown) is provided between the circuit layer 12 and the solder layer 2.

The power module substrate 10 has a ceramic substrate 11, a circuit layer 12 disposed on one surface (the upper surface in FIG. 1) of the ceramic substrate 11, and the other surface (lower surface in FIG. 1) of the ceramic substrate 11. And a disposed metal layer 13.
The ceramic substrate 11 prevents electrical connection between the circuit layer 12 and the metal layer 13, and is made of highly insulating AlN (aluminum nitride). In addition, the thickness of the ceramic substrate 11 is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm. In the present embodiment, as shown in FIG. 1, the width of the ceramic substrate 11 is set wider than the widths of the circuit layer 12 and the metal layer 13.

  As shown in FIG. 5, the circuit layer 12 is formed by bonding a conductive metal plate 22 to one surface of the ceramic substrate 11. In the present embodiment, the circuit layer 12 is formed by joining a metal plate 22 made of a rolled plate of aluminum (so-called 4N aluminum) having a purity of 99.99% or more to the ceramic substrate 11.

  As shown in FIG. 5, the metal layer 13 is formed by bonding a metal plate 23 to the other surface of the ceramic substrate 11. In the present embodiment, the metal layer 13 is formed by joining a metal plate 23 made of a rolled plate of aluminum (so-called 4N aluminum) having a purity of 99.99% or more, like the circuit layer 12, to the ceramic substrate 11. Is formed.

The heat sink 4 is for cooling the power module substrate 10 described above, and the top plate portion 5 joined to the power module substrate 10 and the flow path 6 for circulating a cooling medium (for example, cooling water). And. The heat sink 4 (top plate portion 5) is preferably made of a material having good thermal conductivity, and in this embodiment, is made of A6063 (aluminum alloy).
In the present embodiment, a buffer layer 15 made of aluminum, an aluminum alloy, or a composite material containing aluminum (for example, AlSiC) is provided between the top plate portion 5 of the heat sink 4 and the metal layer 13. .

As shown in FIG. 2, the circuit layer 12 (metal plate 22) is formed at the center in the width direction of the bonding interface 30 between the ceramic substrate 11, the circuit layer 12 (metal plate 22), and the metal layer 13 (metal plate 23). ) And the metal layer 13 (metal plate 23), in addition to Si, one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga and Li are dissolved. In the vicinity of the junction interface 30 between the circuit layer 12 and the metal layer 13, a concentration gradient layer 33 is formed in which the Si concentration and the concentration of the additive element gradually decrease as the distance from the junction interface 30 in the stacking direction increases. Here, the total concentration of Si and the additive element on the bonding interface 30 side of the concentration gradient layer 33 (near the bonding interface 30 of the circuit layer 12 and the metal layer 13) is 0.05 mass% or more and 5 mass% or less. It is set within the range.
Note that the concentrations of Si and the additive element in the vicinity of the bonding interface 30 between the circuit layer 12 and the metal layer 13 are average values measured at five points from the bonding interface 30 by EPMA analysis (spot diameter of 30 μm). The graph of FIG. 2 is obtained by performing line analysis in the stacking direction in the central portion of the circuit layer 12 (metal plate 22) and the metal layer 13 (metal plate 23), and obtaining the above-mentioned concentration at the 50 μm position as a reference. It is.

  Here, in this embodiment, Ge is used as an additive element, the Ge concentration in the vicinity of the junction interface 30 between the circuit layer 12 and the metal layer 13 is 0.05 mass% or more and 1 mass% or less, and the Si concentration is 0.05. It is set within a range of mass% to 0.5 mass%.

Further, when the bonding interface 30 between the ceramic substrate 11 and the circuit layer 12 (metal plate 22) and the metal layer 13 (metal plate 23) is observed with a transmission electron microscope, as shown in FIG. A Si high concentration portion 32 enriched with Si is formed. In the high Si concentration portion 32, the Si concentration is 5 times or more higher than the Si concentration in the circuit layer 12 (metal plate 22) and the metal layer 13 (metal plate 23). The thickness H of the high Si concentration portion 32 is 4 nm or less.
Here, as shown in FIG. 3, the bonding interface 30 to be observed is an interface side end of the lattice image of the circuit layer 12 (metal plate 22) and the metal layer 13 (metal plate 23) and the lattice image of the ceramic substrate 11. A center between the interface side end portion is defined as a reference plane S.

  Below, the manufacturing method of the board | substrate 10 for power modules of the above-mentioned structure is demonstrated with reference to FIGS.

(Fixing step S1)
First, as shown in FIGS. 5 and 6, one or two selected from Si and Zn, Ge, Ag, Mg, Ca, Ga, and Li are formed on the respective joint surfaces of the metal plates 22 and 23 by sputtering. The additional elements of seeds or more are fixed to form the fixed layers 24 and 25.
Here, in the present embodiment, using the Ge as an additional element, Si amount in the pinned layer 24 and 25 are 0.002 mg / cm ² or more 1.2 mg / cm ² or less, Ge amount 0.002 mg / cm ² It is set to 2.5 mg / cm ² or less.

(Lamination process S2)
Next, as shown in FIG. 5, the metal plate 22 is laminated on one surface side of the ceramic substrate 11, and the metal plate 23 is laminated on the other surface side of the ceramic substrate 11. At this time, as shown in FIGS. 5 and 6, the metal plates 22 and 23 are laminated so that the surfaces on which the fixing layers 24 and 25 are formed face the ceramic substrate 11. That is, the fixing layers 24 and 25 (Si and the additive element) are interposed between the metal plates 22 and 23 and the ceramic substrate 11, respectively. In this way, the laminate 20 is formed.

(Heating step S3)
Next, the stacked body 20 formed in the stacking step S2 is charged in a stacking direction (pressure 1 to 35 kgf / cm ² ) in a vacuum heating furnace and heated, as shown in FIG. In addition, molten metal regions 26 and 27 are formed at the interfaces between the metal plates 22 and 23 and the ceramic substrate 11, respectively. As shown in FIG. 6, the molten metal regions 26 and 27 are formed in the fixed layers 24 and 25 of the metal plates 22 and 23 by diffusing Si and the additive element to the metal plates 22 and 23 side. It is formed by increasing the Si concentration in the vicinity of 25 and the concentration of the additive element (Ge concentration in the present embodiment) and lowering the melting point. When the pressure is less than 1 kgf / cm ² , there is a possibility that the ceramic substrate 11 and the metal plates 22 and 23 cannot be bonded well. Moreover, when the above-mentioned pressure exceeds 35 kgf / cm < ² >, there exists a possibility that the metal plates 22 and 23 may deform | transform. Therefore, the above-mentioned pressurizing pressure is preferably in the range of 1 to 35 kgf / cm ² .
Here, in this embodiment, the pressure in the vacuum heating furnace is set in a range of 10 ⁻³ to 10 ⁻⁶ Pa, and the heating temperature is set in a range of 550 ° C. or more and 650 ° C. or less.

(Coagulation step S4)
Next, the temperature is kept constant with the molten metal regions 26 and 27 formed. Then, Si and the additive element (Ge in this embodiment) in the molten metal regions 26 and 27 are further diffused to the metal plates 22 and 23 side. As a result, the Si concentration and the concentration of the additive element (the Ge concentration in the present embodiment) in the portions that were the molten metal regions 26 and 27 are gradually decreased and the melting point is increased, and the temperature is kept constant. Solidification will proceed in the held state. That is, the ceramic substrate 11 and the metal plates 22 and 23 are joined by so-called diffusion bonding (Transient Liquid Phase Diffusion Bonding). After solidification progresses in this way, cooling is performed to room temperature.

  In this way, the metal plates 22 and 23 to be the circuit layer 12 and the metal layer 13 and the ceramic substrate 11 are joined, and the power module substrate 10 according to the present embodiment is manufactured.

  In the power module substrate 10 and the power module 1 according to the present embodiment configured as described above, Si and the additive element (Ge in the present embodiment) are fixed to the joint surfaces of the metal plates 22 and 23. Since the fixing step S <b> 1 is provided, Si and the additive element are present in the bonding interface 30 between the metal plates 22 and 23 and the ceramic substrate 11. Here, since Si and elements such as Zn, Ge, Ag, Mg, Ca, Ga, and Li are elements that lower the melting point of aluminum, they are formed at the interface between the metal plate and the ceramic substrate at a relatively low temperature. A molten metal region can be formed.

  Further, the ceramic substrate 11, the circuit layer 12 (metal plate 22), and the metal layer 13 (metal plate 23) are formed on the bonding surfaces of the metal plates 22, 23, and the fixing layer 24 containing the additive element, 25 Si and the additive element are diffused toward the metal plates 22 and 23 to form the molten metal regions 26 and 27, and Si and the additive element in the molten metal regions 26 and 27 are transferred to the metal plates 22 and 23. Since it is solidified and bonded by diffusion, the ceramic substrate 11 and the metal plates 22 and 23 can be firmly bonded even when bonded under relatively low temperature and short time bonding conditions.

Further, at the center portion in the width direction of the bonding interface 30 between the ceramic substrate 11 and the circuit layer 12 (metal plate 22) and the metal layer 13 (metal plate 23), the circuit layer 12 (metal plate 22) and the metal layer 13 (metal) In the plate 23), Si and the additive element are dissolved, and the total concentration of Si and the additive element on the bonding interface 30 side of the circuit layer 12 and the metal layer 13 is 0.05 mass% or more and 5 mass%, respectively. In the present embodiment, Ge is used as an additive element, and the Ge concentration in the vicinity of the junction interface 30 between the circuit layer 12 and the metal layer 13 is 0.05 mass% or more and 1 mass%. Hereinafter, since the Si concentration is set in a range of 0.05% by mass or more and 0.5% by mass or less, the circuit layer 12 (metal plate 22) and the metal layer 13 (metal plate 23) on the bonding interface 30 side are set. The part is solid solution strengthened, and the circuit layer 12 (gold It is possible to prevent the occurrence of cracks in the plate 22) and the metal layer 13 (metal plate 23).
Further, in the heating step S3, Si and the additive element are sufficiently diffused to the metal plates 22 and 23 side, and the metal plates 22 and 23 and the ceramic substrate 11 are firmly bonded.

  Furthermore, in the present embodiment, the ceramic substrate 11 is made of AlN, and the Si concentration at the bonding interface 30 between the metal plates 22 and 23 and the ceramic substrate 11 is the circuit layer 12 (metal plate 22) and the metal layer 13. Since the Si high concentration portion 32 having a Si concentration of 5 times or more of the (metal plate 23) is formed, the bonding strength between the ceramic substrate 11 and the metal plates 22 and 23 is increased by Si present at the bonding interface 30. Improvements can be made.

  In addition, a fixing step S1 is provided to fix the Si and the additive element to the bonding surface of the metal plate to form the fixing layers 24 and 25. In the heating step S3, Si and the additive element of the fixing layers 24 and 25 are added. Since the molten metal regions 26 and 27 are formed at the interface between the ceramic substrate 11 and the metal plates 22 and 23 by diffusing to the metal plates 22 and 23 side, the Al—Si brazing material is difficult to manufacture. It is not necessary to use a foil, and the power module substrate 10 in which the metal plates 22 and 23 and the ceramic substrate 11 are reliably bonded can be manufactured at low cost.

In the present embodiment, in the fixing step S1, the Si amount and the Ge amount interposed at the interface between the ceramic substrate 11 and the metal plates 22 and 23 are Si: 0.002 mg / cm ² or more, Ge: 0.002 mg. / Cm ² or more, the molten metal regions 26 and 27 can be reliably formed at the interface between the ceramic substrate 11 and the metal plates 22 and 23, and the ceramic substrate 11 and the metal plates 22 and 23 are firmly formed. It becomes possible to join.

Further, the Si amount and the amount of Ge is interposed at the interface between the ceramic substrate 11 and the metal plate 22,23, Si; 1.2mg / cm ² or less, Ge; since a 2.5 mg / cm ² or less, pinned layer It is possible to prevent cracks 24 and 25 from being generated, and the molten metal regions 26 and 27 can be reliably formed at the interface between the ceramic substrate 11 and the metal plates 22 and 23. Further, it is possible to prevent Si and the additive element from excessively diffusing to the metal plates 22 and 23 side and excessively increasing the strength of the metal plates 22 and 23 in the vicinity of the interface. Therefore, when the cooling cycle is applied to the power module substrate 10, the thermal stress can be absorbed by the circuit layer 12 and the metal layer 13 (metal plates 22 and 23), and cracking of the ceramic substrate 11 can be prevented. .

Further, since the fixing layers 24 and 25 are formed directly on the joint surfaces of the metal plates 22 and 23 without using the brazing material foil, it is not necessary to perform the alignment work of the brazing material foil, and the ceramics can be surely used. The board | substrate 11 and the metal plates 22 and 23 can be joined. Therefore, this power module substrate 10 can be produced efficiently.
In addition, since the fixing layers 24 and 25 are formed on the joining surfaces of the metal plates 22 and 23, the oxide film interposed at the interface between the metal plates 22 and 23 and the ceramic substrate 11 is formed on the surfaces of the metal plates 22 and 23. Therefore, the yield of initial bonding can be improved.

Next, a second embodiment of the present invention will be described with reference to FIGS.
In the power module substrate according to the second embodiment, the ceramic substrate 111 is made of Si ₃ N ₄ .

As shown in FIG. 7, the circuit layer 112 (metal plate 122) and the ceramic substrate 111, the circuit layer 112 (metal plate 122), and the metal layer 113 (metal plate 123) In addition to Si, one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga, and Li are dissolved in the metal layer 113 (metal plate 123). Here, the sum of the concentrations of Si and the additive element in the vicinity of the bonding interface 130 between the circuit layer 112 and the metal layer 113 is set in a range of 0.05 mass% or more and 5 mass% or less.
The concentrations of Si and the additive element in the vicinity of the bonding interface 130 between the circuit layer 112 and the metal layer 113 are average values measured at five points at a position 50 μm from the bonding interface 130 by EPMA analysis (spot diameter 30 μm). In addition, the graph of FIG. 7 is obtained by performing line analysis in the stacking direction in the central portion of the circuit layer 112 (metal plate 122) and the metal layer 113 (metal plate 123), and obtaining the concentration at the above-mentioned 50 μm position as a reference. It is.

  Here, in this embodiment, Ag is used as an additive element, the Ag concentration in the vicinity of the bonding interface 130 between the circuit layer 112 and the metal layer 113 is 0.05 mass% or more and 1.5 mass% or less, and the Si concentration is 0. It is set within the range of 0.05 mass% or more and 0.5 mass% or less.

When the bonding interface 130 between the ceramic substrate 111 and the circuit layer 112 (metal plate 122) and the metal layer 113 (metal plate 123) is observed with a transmission electron microscope, as shown in FIG. An oxygen high concentration portion 132 in which oxygen is concentrated is formed. In the oxygen high concentration portion 132, the oxygen concentration is higher than the oxygen concentration in the circuit layer 112 (metal plate 122) and the metal layer 113 (metal plate 123). Note that the thickness H of the high oxygen concentration portion 132 is 4 nm or less.
As shown in FIG. 8, the bonding interface 130 observed here is a lattice image of the ceramic substrate 111 and the interface side end of the lattice image of the circuit layer 112 (metal plate 122) and the metal layer 113 (metal plate 123). The reference plane S is the center between the end of the bonding interface side.

  Below, the manufacturing method of the board | substrate for power modules of the above-mentioned structure is demonstrated with reference to FIG.9 and FIG.10. In the present embodiment, the fixing step is separated into the Si fixing step S10 and the additive element fixing step S11.

(Si fixing step S10)
First, as shown in FIG. 10, Si is fixed to the joint surfaces of the metal plates 122 and 123 by sputtering to form Si layers 124A and 125A. Here, Si layer 124A, Si of 125A is set to 0.002 mg / cm ² or more 1.2 mg / cm ² or less. The thickness of the Si layers 124A and 125A is preferably set within a range of 0.01 μm to 5 μm.

(Additive element fixing step S11)
Next, one or more additional elements selected from Zn, Ge, Ag, Mg, Ca, Ga, and Li are fixed on the above-described Si layers 124A and 125A by sputtering, thereby adding the additional element layer 124B. , 125B. Here, in the present embodiment uses the Ag as an additional element, the additional element layer 124B, Ag amount in the 125B is set to 0.08 mg / cm ² or more 5.4 mg / cm ² or less. The thickness of the additive element layers 124B and 125B is preferably set in the range of 0.01 μm to 5 μm.

(Lamination process S12)
Next, the metal plate 122 is laminated on one surface side of the ceramic substrate 111, and the metal plate 123 is laminated on the other surface side of the ceramic substrate 111. At this time, as shown in FIG. 10, the metal plates 122 and 123 are laminated so that the surfaces on which the Si layers 124A and 125A and the additive element layers 124B and 125B are formed face the ceramic substrate 111. That is, Si layers 124A and 125A and additive element layers 124B and 125B are interposed between the metal plates 122 and 123 and the ceramic substrate 111, respectively. In this way, a laminate is formed.

(Heating step S13)
Next, the stacked body formed in the stacking step S12 is charged in the stacking direction (pressure 1 to 35 kgf / cm ² ) in a vacuum heating furnace and heated, as shown in FIG. The molten metal regions 126 and 127 are formed at the interfaces between the metal plates 122 and 123 and the ceramic substrate 111, respectively. In the molten metal regions 126 and 127, as shown in FIG. 10, Si and additive elements (Ag in this embodiment) of the Si layers 124A and 125A and the additive element layers 124B and 125B diffuse to the metal plates 122 and 123 side. Thus, the Si layers 124A and 125A and the additive element layers 124B and 125B in the vicinity of the metal plates 122 and 123 are formed by increasing the Si concentration and the concentration of the additive element and lowering the melting point.
Here, in this embodiment, the pressure in the vacuum heating furnace is set in a range of 10 ⁻³ to 10 ⁻⁶ Pa, and the heating temperature is set in a range of 550 ° C. or more and 650 ° C. or less.

(Coagulation step S15)
Next, the temperature is kept constant in a state where the molten metal regions 126 and 127 are formed. Then, Si and the additive element in the molten metal regions 126 and 127 are further diffused to the metal plates 122 and 123 side. As a result, the Si concentration and the concentration of the additive element in the portions that were the molten metal regions 126 and 127 gradually decrease and the melting point increases, and solidification proceeds while the temperature is kept constant. It will be. That is, the ceramic substrate 111 and the metal plates 122 and 123 are bonded by so-called diffusion bonding (Transient Liquid Phase Diffusion Bonding). After solidification progresses in this way, cooling is performed to room temperature.

  In this way, the metal plates 122 and 123 to be the circuit layer 112 and the metal layer 113 are bonded to the ceramic substrate 111, and the power module substrate according to this embodiment is manufactured.

  In the power module substrate according to the present embodiment configured as described above, the Si fixing step S10 for fixing Si to the joint surfaces of the metal plates 122 and 123 and the additive element (Ag in the present embodiment) are performed. Since the additive element fixing step S11 for fixing is provided, Si and the additive element are present in the bonding interface 130 between the metal plates 122 and 123 and the ceramic substrate 111. Here, since Si and elements such as Zn, Ge, Ag, Mg, Ca, Ga, and Li lower the melting point of aluminum, bonding under a low temperature condition is possible.

  Further, the ceramic substrate 111, the circuit layer 112 (metal plate 122), and the metal layer 113 (metal plate 123) include Si layers 124 A and 125 A and additive element layers 124 B and 125 B formed on the joining surfaces of the metal plates 122 and 123. The molten metal regions 126 and 127 are formed by diffusing Si and the additive elements toward the metal plates 122 and 123, and the Si and additive elements in the molten metal regions 126 and 127 are diffused into the metal plates 122 and 123. Thus, the ceramic substrate 111 and the metal plates 122 and 123 can be firmly bonded even when bonded under relatively low temperature and short time bonding conditions.

In the present embodiment, the ceramic substrate 111 is made of Si ₃ N ₄ , and the oxygen concentration is present at the bonding interface 130 between the metal plates 122 and 123 to be the circuit layer 112 and the metal layer 113 and the ceramic substrate 111. Since the oxygen high concentration part 132 made higher than the oxygen concentration in the metal plates 122 and 123 constituting the layer 112 and the metal layer 113 is generated, the oxygen bonds between the ceramic substrate 111 and the metal plates 122 and 123. The strength can be improved. Further, since the thickness of the high oxygen concentration portion 132 is set to 4 nm or less, the occurrence of cracks in the high oxygen concentration portion 132 due to stress when a thermal cycle is loaded is suppressed.

As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.
For example, the metal plate constituting the circuit layer and the metal layer has been described as a rolled plate of pure aluminum having a purity of 99.99%, but is not limited to this, and aluminum having a purity of 99% (2N aluminum) It may be.

Further, in the fixing step, it has been described that the Si and the additive element are fixed to the joint surface of the metal plate. However, the present invention is not limited to this, and Si and the additive element are bonded to the joint surface of the ceramic substrate. Si and the additive element may be fixed to the bonding surface of the ceramic substrate and the bonding surface of the metal plate, respectively.
In the fixing step, Al may be fixed together with Si and the additive element.
Furthermore, in the fixing process, it has been described that Si and the additive element are fixed by sputtering. However, the present invention is not limited to this, and plating, vapor deposition, CVD, cold spray, or a paste in which powder is dispersed and Si and the additive element may be fixed by application of ink or the like.

In the second embodiment, the fixing process is described as performing the additional element fixing process S11 after the Si fixing process S10. However, the present invention is not limited to this, and the Si fixing process is performed after the additional element fixing process. May be performed.
Further, an alloy layer of Si and an additive element may be formed using an additive element and an alloy such as Si.
Further, the ceramic substrate and the metal plate have been described as being bonded using a vacuum heating furnace, but the present invention is not limited to this, and the ceramic substrate and the metal plate can be used in an N ₂ atmosphere, an Ar atmosphere, a He atmosphere, or the like. You may join with.

Moreover, although demonstrated as what provided the buffer layer which consists of aluminum, the aluminum alloy, or the composite material containing aluminum (for example, AlSiC etc.) between the top-plate part of a heat sink and a metal layer, even if this buffer layer is not provided Good.
Furthermore, although the heat sink has been described as being made of aluminum, it may be made of an aluminum alloy or a composite material containing aluminum. Furthermore, although the description has been made with the heat sink having the flow path of the cooling medium, the structure of the heat sink is not particularly limited, and heat sinks having various configurations can be used.

Further, the ceramic substrate AlN, has been described as being composed of Si ₃ N _4, it is not limited thereto, but may be composed of other ceramic such as Al ₂ O _3.

A comparative experiment conducted to confirm the effectiveness of the present invention will be described.
A power module substrate is fabricated by bonding a circuit layer made of 4N aluminum having a thickness of 0.6 mm and a metal layer made of 4N aluminum having a thickness of 0.6 mm to a ceramic substrate made of AlN having a thickness of 0.635 mm. did.
Here, on the joint surface of the aluminum plate (4N aluminum) to be the circuit layer and the metal layer, Si and an additive element are fixed to form a fixed layer, the metal plate and the ceramic substrate are laminated, and heated under pressure, A metal plate and a ceramic substrate were joined.

And various test pieces which changed the adhering additive element were produced, and joining reliability was evaluated using these test pieces. As an evaluation of the bonding reliability, the bonding rates after 2000 times of the thermal cycle (−45 ° C.-125 ° C.) were compared. The results are shown in Tables 1 to 3.
In addition, the joining rate was computed with the following formula | equation. Here, the initial bonding area is an area to be bonded before bonding.
Bonding rate = (initial bonding area-peeling area) / initial bonding area

  Moreover, about these test pieces, the density | concentration of Si and the addition element of the vicinity of the joining interface (50 micrometers from a joining interface) of a ceramic substrate among metal plates was measured by EPMA analysis (spot diameter of 30 micrometers). Table 1-3 shows the total concentration of Si and additive elements.

The amount of Si in the fixing layer is 0.01 mg / cm ² (0.043 μm in terms of thickness), and the amount of fixing of the additive element (Li) is 0.05 mg / cm ² (0.935 μm in terms of thickness). In Comparative Example 1 in which the total of 0.06 mg / cm ² was set, the joining rate after 2000 cycles of the cooling / heating cycle (−45 ° C. to 125 ° C.) was a very low value of 50.6%. This is considered to be because the amount of Si and the amount of additive element (Li) present at the interface were small, and the molten metal region could not be sufficiently formed at the interface between the metal plate and the ceramic substrate.

The fixed layer has an Si amount of 1.2 mg / cm ² (thickness conversion 5.15 μm), an additional element (Zn) fixed amount of 1.2 mg / cm ² (thickness conversion 1.68 μm), and an additional element (Ge ) Of 2.4 mg / cm ² (thickness conversion 4.51 μm) and the additive element (Ag) fixation amount of 5.3 mg / cm ² (thickness conversion 5.05 μm). In Comparative Example 2 in which the temperature was 10.1 mg / cm ² , the joining rate after 2000 cycles of the cooling / heating cycle (−45 ° C. to 125 ° C.) was 63.8%. This is presumably because the amount of Si and additive elements (Zn, Ge, Ag) was so large that the metal plate became too hard, and thermal stress due to the thermal cycle was applied to the bonding interface.

On the other hand, in this invention example 1-63, all the joining rates after repeating a cooling-heat cycle (-45 degreeC-125 degreeC) 2000 times were 93% or more.
Moreover, the Si amount of the fixing layer is 0.01 mg / cm ² (0.043 μm in thickness conversion), and the fixing amount of the additive element (Li) is 0.09 mg / cm ² (1.68 μm in thickness conversion), The present invention example 64 in which the total fixed amount was 0.1 mg / cm ² and the Si amount in the fixed layer was 1.1 mg / cm ² (4.72 μm in thickness), and the fixed amount of the additive element (Zn) was 1.2 mg / cm ² (thickness conversion: 1.68 μm), additional element (Ge) fixed amount: 2.2 mg / cm ² (thickness converted: 4.13 μm), additional element (Ag) fixed amount: 5. is a 1 mg / cm ² (thickness in terms of 4.86μm), also in the present invention example 65 the total fixed amount is a 9.6 mg / cm ^2, repeated 2000 times a thermal cycle (-45 ℃ -125 ℃) After that, the bonding rate exceeded 70%.
From this result, according to the example of the present invention, it becomes possible to reliably form a molten metal region at the interface between the metal plate and the ceramic substrate by diffusing Si and various additive elements, thereby strengthening the metal plate and the ceramic substrate. It is judged that it was able to join.

  In Inventive Example 1-65, the total concentration of Si and various additive elements in the vicinity of the bonding interface of the ceramic substrate (50 μm from the bonding interface) in the metal plate is within the range of 0.05% by mass to 5% by mass. It was confirmed that

1 Power module 3 Semiconductor chip (electronic component)
10 Power module substrate 11, 111 Ceramic substrate 12, 112 Circuit layer 13, 113 Metal layer 22, 23, 122, 123 Metal plate 24, 25 Adhering layer 26, 27, 126, 127 Molten metal region 30, 130 Bonding interface 124A , 125A Si layer 124B, 125B Additive element layer

Claims (8)

A power module substrate in which a metal plate made of aluminum is laminated and bonded to the surface of a ceramic substrate,
In addition to Si, the metal plate contains one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga, and Li, and the metal plate includes A power module substrate, wherein the sum of the Si concentration in the vicinity of the interface with the ceramic substrate and the concentration of the additive element is set in a range of 0.05 mass% to 5 mass%. The ceramic substrate is made of AlN or Al ₂ O ₃ , and a Si high concentration portion where the Si concentration is 5 times or more of the Si concentration in the metal plate at the bonding interface between the metal plate and the ceramic substrate The power module substrate according to claim 1, wherein the power module substrate is formed. The ceramic substrate is made of AlN or Si ₃ N ₄ , and the oxygen concentration is higher than the oxygen concentration in the metal plate and the ceramic substrate at the bonding interface between the metal plate and the ceramic substrate. 2. The power module substrate according to claim 1, wherein a high concentration portion is formed, and the thickness of the oxygen high concentration portion is 4 nm or less.   A power module substrate with a heat sink, comprising: the power module substrate according to any one of claims 1 to 3; and a heat sink that cools the power module substrate.   A power module comprising: the power module substrate according to any one of claims 1 to 3; and an electronic component mounted on the power module substrate. A method for manufacturing a power module substrate in which a metal plate made of aluminum is laminated and bonded to the surface of a ceramic substrate,
In addition to Si, at least one of the bonding surface of the ceramic substrate and the bonding surface of the metal plate is one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga, and Li. Fixing step of forming a fixing layer containing Si and the additive element,
A laminating step of laminating the ceramic substrate and the metal plate via the fixing layer;
Heating and pressurizing and heating the laminated ceramic substrate and the metal plate in a laminating direction to form a molten metal region at the interface between the ceramic substrate and the metal plate;
A solidification step of joining the ceramic substrate and the metal plate by solidifying the molten metal region;
In the fixing step, Si and the additive element are interposed in the interface between the ceramic substrate and the metal plate within a range of 0.1 mg / cm ^{2 to} 10 mg / cm ² ,
In the heating step, the molten metal region is formed at the interface between the ceramic substrate and the metal plate by diffusing elements of the fixed layer toward the metal plate side. Production method.   The method for manufacturing a power module substrate according to claim 6, wherein in the fixing step, Al is fixed together with Si and the additive element.   The fixing step may be performed on at least one of the bonding surface of the ceramic substrate and the bonding surface of the metal plate by plating, vapor deposition, CVD, sputtering, cold spray, or application of a paste and ink in which powder is dispersed. The Si, and one or more additive elements selected from Zn, Ge, Ag, Mg, Ca, Ga, and Li are fixedly attached to each other. A method for manufacturing a power module substrate.

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