JP2011082283A - Led light emitting device - Google Patents

Led light emitting device Download PDF

Info

Publication number
JP2011082283A
JP2011082283A JP2009232129A JP2009232129A JP2011082283A JP 2011082283 A JP2011082283 A JP 2011082283A JP 2009232129 A JP2009232129 A JP 2009232129A JP 2009232129 A JP2009232129 A JP 2009232129A JP 2011082283 A JP2011082283 A JP 2011082283A
Authority
JP
Japan
Prior art keywords
light emitting
constant voltage
emitting element
light
voltage diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009232129A
Other languages
Japanese (ja)
Inventor
Masahito Furuya
正仁 古屋
Kazuya Ishihara
一哉 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Electronics Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP2009232129A priority Critical patent/JP2011082283A/en
Publication of JP2011082283A publication Critical patent/JP2011082283A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-power LED light emitting device having a constant voltage diode element withstanding electrostatic voltage and preventing occurrence of variations or unevenness in luminescent color and emission luminance. <P>SOLUTION: The LED light emitting device 11 includes a substrate 12, a light emitting element 15 mounted on the substrate 12, a constant voltage diode element 16 mounted close to the light emitting element 15, and a translucent sealer 17 containing a photoexciting agent sealing the light emitting element 15 and the constant voltage diode element 16 and exciting light generated from the light emitting element 15. The constant voltage diode element 16 is formed to have transparency. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、静電耐圧性を有した高出力のLED発光装置に関するものである。   The present invention relates to a high-power LED light-emitting device having electrostatic withstand voltage characteristics.

従来、LED発光装置は、電極パターンが形成された基板上に発光素子をダイボンドあるいはワイヤボンドによって実装した後、透光性を有した樹脂体によって封止して構成されている(特許文献1)。   2. Description of the Related Art Conventionally, an LED light-emitting device is configured by mounting a light-emitting element on a substrate on which an electrode pattern is formed by die bonding or wire bonding, and then sealing with a resin body having translucency (Patent Document 1). .

図6はLED発光装置のうち、照明用に使用される高出力タイプのLED発光装置1の構造を示したものである。このLED発光装置1は、カソード及びアノードによる二極の電極3,4が形成された長方形状の基板2と、この基板2上に実装される発光素子5と、この発光素子5に近接して実装される定電圧ダイオード素子6と、前記発光素子5及び定電圧ダイオード素子6を封止する透光性樹脂からなる封止体7とを備えて構成されている。   FIG. 6 shows the structure of the LED light emitting device 1 of the high output type used for illumination among the LED light emitting devices. The LED light emitting device 1 includes a rectangular substrate 2 on which two electrodes 3 and 4 are formed by a cathode and an anode, a light emitting element 5 mounted on the substrate 2, and a proximity to the light emitting element 5. The constant voltage diode element 6 to be mounted and a sealing body 7 made of a translucent resin for sealing the light emitting element 5 and the constant voltage diode element 6 are configured.

前記定電圧ダイオード素子6は、発光素子5を静電気によるサージから保護するために設けられるもので、高電流が流れる照明用途の発光素子5を安定して駆動させることができる。   The constant voltage diode element 6 is provided to protect the light emitting element 5 from a surge caused by static electricity, and can stably drive the light emitting element 5 for lighting use in which a high current flows.

特開2002−111073号公報JP 2002-111073 A

前記LED発光装置1は、図7(a)に示すように、定電圧ダイオード素子6が発光素子5に近接して配置されているため、発光素子5から発せられる光の一部が定電圧ダイオード素子6によって遮られたり、反射したりすることによって、発光にバラツキやムラが生じる場合がある。図7(b)は前記LED発光装置1の発光の指向性を示したものである。このLED発光装置1全体の輝度は、発光素子5の中心をピークとしてなだらかに減少していくが、電極3が位置しているカソード側に比べて電極4が位置しているアノード側の方が定電圧ダイオード素子6の存在によって減少率が大きくなっている。   In the LED light emitting device 1, as shown in FIG. 7A, since the constant voltage diode element 6 is disposed close to the light emitting element 5, a part of the light emitted from the light emitting element 5 is a constant voltage diode. Variations or unevenness in light emission may occur due to being blocked or reflected by the element 6. FIG. 7 (b) shows the directivity of light emission of the LED light emitting device 1. The luminance of the LED light emitting device 1 as a whole gradually decreases with the center of the light emitting element 5 as a peak, but the anode side on which the electrode 4 is located is closer to the cathode side on which the electrode 3 is located. The reduction rate is increased due to the presence of the constant voltage diode element 6.

また、前記発光素子5を封止する封止体7に蛍光剤を分散させることによって、発光素子5から発せられる光を白色あるいは中間色に変換して発光させるようなLED発光装置の場合は、封止体7内に配置されている定電圧ダイオード素子6の影響によって、発光色や発光輝度にバラツキやムラが生じる場合がある。   Further, in the case of an LED light emitting device that emits light by converting the light emitted from the light emitting element 5 into white or an intermediate color by dispersing a fluorescent agent in the sealing body 7 that seals the light emitting element 5, Due to the influence of the constant voltage diode element 6 disposed in the stationary body 7, there may be variations or unevenness in the emission color and emission luminance.

前記定電圧ダイオード素子6は、素子自体が有色のシリコン樹脂で形成されているため、発光素子5から発せられる光を吸収あるいは反射してしまうことから、この定電圧ダイオード素子6が配置された部分が局所的に暗くなったり、影になったりする場合がある。   Since the constant voltage diode element 6 is formed of colored silicon resin itself, it absorbs or reflects light emitted from the light emitting element 5, and therefore the portion where the constant voltage diode element 6 is disposed. May become locally dark or shadowed.

従来、このような問題を改善するために、定電圧ダイオード素子を発光素子が封止される封止体から離間した基板の表面や基板の裏面側に実装していた。しかしながら、前記定電圧ダイオード素子を発光素子から離間すると静電気のサージ吸収効果が十分得られなくなる。また、発光素子と定電圧ダイオード素子とを離間させるため基板サイズが大きくなったり、配線パターンの引き回しが長くなったりするといった問題があり、小型化が制限されていた。   Conventionally, in order to improve such a problem, the constant voltage diode element is mounted on the front surface of the substrate or the back surface side of the substrate separated from the sealing body in which the light emitting element is sealed. However, if the constant voltage diode element is separated from the light emitting element, a sufficient effect of absorbing electrostatic surge cannot be obtained. In addition, since the light emitting element and the constant voltage diode element are separated from each other, there is a problem that the substrate size becomes large and the wiring pattern becomes long, and miniaturization is restricted.

そこで、本発明の目的は、静電耐圧用の定電圧ダイオード素子を有して構成される高出力のLED発光装置において、発光色や発光輝度にバラツキやムラを生じさせることのないLED発光装置を提供することである。   SUMMARY OF THE INVENTION An object of the present invention is to provide a high-power LED light-emitting device that includes a constant-voltage diode element for electrostatic withstand voltage, and does not cause variation or unevenness in light emission color or light emission luminance. Is to provide.

上記課題を解決するために、本発明のLED発光装置は、基板と、該基板上に実装される発光素子と、該発光素子に近接して実装される定電圧ダイオード素子と、前記発光素子及び定電圧ダイオード素子を封止するとともに、前記発光素子から発せられる光を励起する光励起剤が含有された透光性の封止体とを備えて構成されるLED発光装置において、前記定電圧ダイオード素子が透明性を有して形成されていることを特徴とする。   In order to solve the above-described problems, an LED light emitting device of the present invention includes a substrate, a light emitting element mounted on the substrate, a constant voltage diode element mounted in proximity to the light emitting element, the light emitting element, and the light emitting element. In the LED light emitting device configured to seal the constant voltage diode element and include a light-transmitting sealing body containing a photoexciter that excites light emitted from the light emitting element, the constant voltage diode element Is formed with transparency.

本発明に係るLED発光装置によれば、発光素子に近接して実装される定電圧ダイオード素子が透明性を有しているので、発光素子から発せられた光が定電圧ダイオード素子によって遮られたり、反射したりすることがない。このため、十分な静電耐圧性を備えながら、均一且つ高出力で駆動させることのできるLED発光装置の提供が可能となった。   According to the LED light emitting device of the present invention, since the constant voltage diode element mounted close to the light emitting element has transparency, the light emitted from the light emitting element is blocked by the constant voltage diode element. , No reflection. For this reason, it has become possible to provide an LED light-emitting device that can be driven with uniform and high output while having sufficient electrostatic withstand voltage.

また、封止体内に光励起剤を分散させることによって、発光色を変換させるような構造のLED発光装置にあっては、前記定電圧ダイオード素子が透明性を有しているので、封止体内における光励起作用に偏りが生じなくなり、バラツキやムラの生じない白色発光あるいは中間色発光を得ることができる。   Further, in the LED light emitting device having a structure in which the light emission color is converted by dispersing the photoexciter in the sealed body, since the constant voltage diode element has transparency, There is no bias in the photoexcitation action, and it is possible to obtain white light emission or intermediate color light emission with no variation or unevenness.

本発明に係るLED発光装置の斜視図である。1 is a perspective view of an LED light emitting device according to the present invention. 上記LED発光装置の断面図である。It is sectional drawing of the said LED light-emitting device. 発光素子の構造を示す断面図である。It is sectional drawing which shows the structure of a light emitting element. 上記LED発光装置の回路図である。It is a circuit diagram of the said LED light-emitting device. 上記LED発光装置の平面図(a)及び発光特性図(b)である。It is the top view (a) and light emission characteristic figure (b) of the said LED light-emitting device. 従来のLED発光装置の斜視図である。It is a perspective view of the conventional LED light-emitting device. 上記従来のLED発光装置の平面図(a)及び発光特性図(b)である。It is the top view (a) and light emission characteristic figure (b) of the said conventional LED light-emitting device.

以下、添付図面に基づいて本発明に係るLED発光装置の実施形態を詳細に説明する。図1及び図2に示すように、本発明のLED発光装置11は、一対の電極(カソード電極13とアノード電極14)がパターン形成された長方形状の基板12と、この基板12上に実装される発光素子15と、この発光素子15に近接して実装される定電圧ダイオード素子16と、前記発光素子15及び定電圧ダイオード素子16を封止する透光性を有する透明樹脂又は半透明樹脂による封止体17とを備えて構成されている。   Hereinafter, embodiments of an LED light emitting device according to the present invention will be described in detail with reference to the accompanying drawings. As shown in FIGS. 1 and 2, the LED light emitting device 11 of the present invention is mounted on a rectangular substrate 12 having a pattern of a pair of electrodes (cathode electrode 13 and anode electrode 14) and the substrate 12. A light emitting element 15, a constant voltage diode element 16 mounted close to the light emitting element 15, and a translucent transparent resin or translucent resin that seals the light emitting element 15 and the constant voltage diode element 16. A sealing body 17 is provided.

前記基板12は、一般的なエポキシ樹脂やBTレジン等の絶縁材料で長方形状に形成され、中央部に発光素子15及び定電圧ダイオード素子16を実装するための実装領域が設けられ、この実装領域を挟んで対向する方向にカソード電極13とアノード電極14が形成される。   The substrate 12 is formed in a rectangular shape with an insulating material such as a general epoxy resin or BT resin, and a mounting area for mounting the light emitting element 15 and the constant voltage diode element 16 is provided at the center. A cathode electrode 13 and an anode electrode 14 are formed in a direction facing each other with the electrode interposed therebetween.

前記発光素子15は、一般照明用として白色系の発光色を出すために、窒化ガリウム系化合物半導体からなる高出力タイプの青色発光素子(青色LED)が用いられる。この青色LEDは、図3に示すように、サファイアガラスからなるサブストレート21と、このサブストレート21の上にn型半導体22、p型半導体23を拡散成長させた拡散層27とからなっている。前記n型半導体22及びp型半導体23はそれぞれn型電極24,p型電極25を備えており、前記基板12に設けられたカソード電極13及びアノード電極14にボンディングワイヤによって接続され、一定の電流を流すことで発光層26から青色光が発せられる。   As the light emitting element 15, a high output type blue light emitting element (blue LED) made of a gallium nitride compound semiconductor is used in order to emit white light emission color for general illumination. As shown in FIG. 3, the blue LED is composed of a substrate 21 made of sapphire glass and a diffusion layer 27 in which an n-type semiconductor 22 and a p-type semiconductor 23 are diffused and grown on the substrate 21. . Each of the n-type semiconductor 22 and the p-type semiconductor 23 includes an n-type electrode 24 and a p-type electrode 25, and is connected to the cathode electrode 13 and the anode electrode 14 provided on the substrate 12 by a bonding wire, and has a constant current. As a result, blue light is emitted from the light emitting layer 26.

前記定電圧ダイオード素子16は、ツェナーダイオードともよばれ、前記発光素子15を静電気によるサージから保護するために設けられるものであり、図4に示すように、発光素子15とが逆方向となるように並列に接続される。この定電圧ダイオード素子16を付加することにより、発光素子15に逆方向極性の静電気電圧が加わった場合であっても、0.6V以上の静電気は定電圧ダイオード素子16側に流れて消耗してしまうため、発光素子15が保護される。   The constant voltage diode element 16 is also called a Zener diode, and is provided to protect the light emitting element 15 from a surge caused by static electricity. As shown in FIG. 4, the light emitting element 15 is in a reverse direction. Connected in parallel. By adding this constant voltage diode element 16, even when a reverse polarity electrostatic voltage is applied to the light emitting element 15, static electricity of 0.6 V or more flows to the constant voltage diode element 16 side and is consumed. Therefore, the light emitting element 15 is protected.

定電圧ダイオード素子16は、図2に示したように、通常の整流用のダイオード素子と同様にサブストレート31の上にn型半導体とp型半導体を拡散成長させた拡散層32を有した構造となっている。本発明の特徴的な点は、前記定電圧ダイオード素子16が透明性を有するように、サブストレート31又は拡散層32が透明部材あるいは透明酸化物で構成されているところにある。   As shown in FIG. 2, the constant voltage diode element 16 has a structure having a diffusion layer 32 in which an n-type semiconductor and a p-type semiconductor are diffused and grown on a substrate 31 in the same manner as a normal rectifying diode element. It has become. A characteristic point of the present invention is that the substrate 31 or the diffusion layer 32 is made of a transparent member or a transparent oxide so that the constant voltage diode element 16 has transparency.

前記封止体17は、前記基板12上に配置させた金型内に透光性を有する透明又は半透明の樹脂材を充填することによって、発光素子15及び定電圧ダイオード素子16を被覆保護している。本実施形態における封止体17は、エポキシ樹脂あるいはシリコン樹脂基材に、光励起剤の一つである蛍光粒子の原料となるイットリウム・アルミニウム・ガーネット(以下、略してYAGという)や、色素粒子の原料となる染料がそれぞれ適量混入され、これらが均一に分散されている。   The sealing body 17 covers and protects the light emitting element 15 and the constant voltage diode element 16 by filling a mold disposed on the substrate 12 with a transparent or translucent resin material having translucency. ing. The sealing body 17 in this embodiment is made of epoxy resin or silicon resin base material, yttrium aluminum garnet (hereinafter referred to as YAG for short), which is a raw material of fluorescent particles that are one of photoexciters, and pigment particles. An appropriate amount of each dye as a raw material is mixed, and these are uniformly dispersed.

従って、LED発光装置11のカソード電極13とアノード電極14との間に電流が流れると、図3に示したように、n型半導体22とp型半導体23との境界面(発光層)26が青色発光し、この青色発光が上方、側方及び下方へ向かう。特に上方へ発せられた青色光は、封止体17の中に分散されている蛍光粒子を励起することで、波長変換された広波長の白色系の光が封止体17の中を四方八方に拡散する。   Therefore, when a current flows between the cathode electrode 13 and the anode electrode 14 of the LED light-emitting device 11, as shown in FIG. 3, the boundary surface (light-emitting layer) 26 between the n-type semiconductor 22 and the p-type semiconductor 23 is formed. Blue light is emitted, and this blue light emission is directed upward, laterally, and downward. In particular, the blue light emitted upward excites the fluorescent particles dispersed in the sealing body 17, so that the wavelength-converted white light having a wide wavelength is transmitted in all directions in the sealing body 17. To spread.

本発明のLED発光装置11によれば、図5(a)に示すように、同じ封止体17内に定電圧ダイオード素子16が発光素子15に近接して配置されているが、前記定電圧ダイオード素子16が透光性を有しているため、発光素子15から発せられる光のほとんどを透過させることができる。このため、図5(b)に示すように、発光素子15の中心部をピークとした輝度が電極13が位置しているカソード側と電極14が位置しているアノード側とでの輝度の減衰量が略均一となる。また、封止体17内に分散されている蛍光剤が略均等に励起されるため、定電圧ダイオード素子16が実装されている周辺部を含む全体が同じ発光色や発光輝度となる。さらに、前記定電圧ダイオード素子16が透光性を有しているため、発光素子15の影になる部分が大幅に減少し、局所的な発光色や発光輝度のムラを抑えることができる。   According to the LED light emitting device 11 of the present invention, as shown in FIG. 5A, the constant voltage diode element 16 is disposed in the same sealing body 17 in the vicinity of the light emitting element 15. Since the diode element 16 has translucency, most of the light emitted from the light emitting element 15 can be transmitted. For this reason, as shown in FIG. 5B, the luminance with the peak at the center of the light emitting element 15 is attenuated between the cathode side where the electrode 13 is located and the anode side where the electrode 14 is located. The amount is substantially uniform. In addition, since the fluorescent agent dispersed in the sealing body 17 is excited substantially uniformly, the entirety including the peripheral portion where the constant voltage diode element 16 is mounted has the same emission color and emission luminance. Further, since the constant voltage diode element 16 has translucency, the shadowed portion of the light emitting element 15 is greatly reduced, and local unevenness in the emission color and emission luminance can be suppressed.

以上説明したように、本発明のLED発光装置11によれば、定電圧ダイオード素子16が発光素子15に近接して実装されているため、静電気によるサージの侵入を効果的に防止することができるとともに、発光色や発光輝度を均一にすることが可能となった。このため、室内用の一般照明をはじめとして、車載用のヘッドランプのような高出力且つ高信頼性が要求されるような照明装置や照明ユニットに最適である。   As described above, according to the LED light emitting device 11 of the present invention, since the constant voltage diode element 16 is mounted close to the light emitting element 15, it is possible to effectively prevent the surge from entering due to static electricity. At the same time, the emission color and emission luminance can be made uniform. Therefore, it is most suitable for lighting devices and lighting units that require high output and high reliability, such as in-vehicle headlamps, as well as indoor general lighting.

なお、上記実施形態は、マザーボードに直接表面実装されるチップ型のLED発光装置について説明したものであるが、リードフレーム型のものにも適用することができる。即ち、発光素子や透光性を有する定電圧ダイオード素子が載置される台座の上に窒化ガリウム系化合物半導体からなる青色の発光素子チップを固着した後、砲弾形の封止体の中に蛍光粒子や色素粒子等の光励起剤を適量分散させることで白色系の発光を得ることができる。   In addition, although the said embodiment demonstrated the chip-type LED light-emitting device directly mounted on the motherboard, it can be applied also to a lead frame type. That is, after fixing a blue light-emitting element chip made of a gallium nitride compound semiconductor on a pedestal on which a light-emitting element or a light-transmitting constant voltage diode element is mounted, a fluorescent light is placed in a shell-shaped sealing body. White light emission can be obtained by dispersing an appropriate amount of a photoexciter such as particles or pigment particles.

1 LED発光装置
2 基板
3、4 電極
5 発光素子
6 定電圧ダイオード素子
7 封止体
11 LED発光装置
12 基板
13、14 電極
15 発光素子
16 定電圧ダイオード素子
17 封止体
21 サブストレート
22 n型半導体
23 p型半導体
24 n型電極
25 p型電極
26 発光層
27 拡散層
31 サブストレート
32 拡散層
DESCRIPTION OF SYMBOLS 1 LED light-emitting device 2 Board | substrate 3, 4 Electrode 5 Light emitting element 6 Constant voltage diode element 7 Sealing body 11 LED light emitting apparatus 12 Board | substrate 13, 14 Electrode 15 Light emitting element 16 Constant voltage diode element 17 Sealing body 21 Substrate 22 N type Semiconductor 23 p-type semiconductor 24 n-type electrode 25 p-type electrode 26 Light emitting layer 27 Diffusion layer 31 Substrate 32 Diffusion layer

Claims (4)

基板と、該基板上に実装される発光素子と、該発光素子に近接して実装される定電圧ダイオード素子と、前記発光素子及び定電圧ダイオード素子を封止するとともに、前記発光素子から発せられる光を励起する光励起剤が含有された透光性の封止体とを備えて構成されるLED発光装置において、
前記定電圧ダイオード素子が透明性を有して形成されていることを特徴とするLED発光装置。
A substrate, a light emitting element mounted on the substrate, a constant voltage diode element mounted in proximity to the light emitting element, the light emitting element and the constant voltage diode element are sealed, and emitted from the light emitting element In the LED light emitting device configured to include a light-transmitting sealing body containing a photoexciter that excites light,
The LED light emitting device, wherein the constant voltage diode element is formed to have transparency.
前記定電圧ダイオード素子は、サブストレートと、このサブストレート上に拡散成長されるn型半導体及びp型半導体からなる拡散層とによって構成され、前記サブストレート及び拡散層の少なくともいずれかが透明性を有する請求項1に記載のLED発光装置。   The constant voltage diode element includes a substrate, and a diffusion layer made of an n-type semiconductor and a p-type semiconductor that is diffused and grown on the substrate, and at least one of the substrate and the diffusion layer is transparent. The LED light-emitting device according to claim 1. 前記発光素子は、サファイアガラス上にn型半導体とp型半導体を拡散成長させた青色発光素子である請求項1に記載のLED発光装置。   The LED light-emitting device according to claim 1, wherein the light-emitting element is a blue light-emitting element obtained by diffusing and growing an n-type semiconductor and a p-type semiconductor on sapphire glass. 前記封止体は、前記青色発光素子から発せられる波長の光を白色光に変換する光励起剤を含有している請求項1に記載のLED発光装置。   The LED light-emitting device according to claim 1, wherein the sealing body contains a photoexciter that converts light having a wavelength emitted from the blue light-emitting element into white light.
JP2009232129A 2009-10-06 2009-10-06 Led light emitting device Pending JP2011082283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009232129A JP2011082283A (en) 2009-10-06 2009-10-06 Led light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009232129A JP2011082283A (en) 2009-10-06 2009-10-06 Led light emitting device

Publications (1)

Publication Number Publication Date
JP2011082283A true JP2011082283A (en) 2011-04-21

Family

ID=44076046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009232129A Pending JP2011082283A (en) 2009-10-06 2009-10-06 Led light emitting device

Country Status (1)

Country Link
JP (1) JP2011082283A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258361A (en) * 2012-06-14 2013-12-26 Renesas Electronics Corp Semiconductor device and manufacturing method of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258361A (en) * 2012-06-14 2013-12-26 Renesas Electronics Corp Semiconductor device and manufacturing method of the same

Similar Documents

Publication Publication Date Title
US7910938B2 (en) Encapsulant profile for light emitting diodes
JP6628739B2 (en) Light emitting device
US20110089815A1 (en) Light-emitting device
KR20010099729A (en) A light emitting diode device that emits white light
JP6542509B2 (en) Phosphor and light emitting device package including the same
US9812495B2 (en) Light emitting device and lighting apparatus
JP2008172239A (en) Led package
KR102360957B1 (en) Light emitting diode package
JP2008251938A (en) Semiconductor light-emitting device
KR20090044306A (en) Light emitting diode package
JP2001077430A (en) Light-emitting diode
JP2007243056A (en) Light emitting device
JP2007043074A (en) Luminaire
JP4213168B2 (en) Light emitting device
KR20120024104A (en) Light emitting element
JP4709405B2 (en) Light emitting diode
JP2007266246A (en) Led module
KR100954858B1 (en) A high-luminance led package and method for manufacturing thereof
JP2011082283A (en) Led light emitting device
JP2006245080A (en) Light fixture
KR100712880B1 (en) White light emitting diode capable of reducing correlated color temperature variation
JP2007059667A (en) Light emitting device
KR102131309B1 (en) Phosphor and light emitting device package including the same
KR102000072B1 (en) luminescence Device
JP2006319061A (en) Semiconductor light emitting apparatus