JP2011080129A - Plating device and plating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a space where a plating device is arranged in a plating device and a plating method. <P>SOLUTION: A plating device unit 20 is attached on each of the upper surface and the lower surface of a fixed base 31. The fixed base 31 rotates with the rotation of a motor 36. The motor 36 is driven to position each plating device 20 in the upper side to fit a member 51 to be plated. A plating film free from void is formed by plating while rotating the fixed base 31 in one direction and the reverse direction to rock the plating liquid in the plating chamber 18 to eliminate air stuck on the member 51 to be plated. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a plating apparatus and a plating method.

  A cup-type plating apparatus is known as a plating apparatus for forming wirings, electrodes, and the like on a semiconductor wafer by electrolytic plating. The cup-type plating apparatus is an apparatus that performs plating by jetting a plating solution into a cup-type plating tank in which an anode electrode is installed in a horizontal direction by a pump, and contacting a semiconductor wafer disposed on the upper part of the plating tank. The overflowed plating solution once flows down to the overflow opening formed between the peripheral wall of the plating apparatus and the cup, and then flows out through the outflow pipe by the pump. The plating solution is circulated through the inflow piping, the plating apparatus, and the outflow piping by a pump. (For example, refer to Patent Document 1).

  In such a cup-type plating apparatus, the electric field lines at the time of electrolytic plating become substantially uniform by making the anode electrode substantially the same size as the semiconductor wafer, so that the thickness of the wiring, electrodes, etc. can be formed uniformly. Has the advantage of being able to

JP-A-6-57497

  Since the conventional plating apparatus has a structure in which anode electrodes having substantially the same size as the semiconductor wafer are horizontally arranged, the plating apparatus becomes large. In particular, since it is not possible to adopt a structure in which a plurality of layers of anode electrodes and semiconductor wafers are stacked in the vertical direction via a plating solution, a layout in which a plurality of plating apparatuses are arranged in a plane to increase the production quantity. The space for the plating process is further increased.

The plating apparatus according to the first aspect of the present invention is respectively opposed to the plating tank, the anode electrode installed in the plating tank, the piping for circulating the plating solution in the plating tank, and the anode electrode. A cathode electrode provided at a position, a seal member provided at an outer periphery of the cathode electrode, and a member to be plated connected to the cathode electrode, while pressing the seal member against the plating tank side and pressing the seal member At least two plating apparatus units each having a pressing member for sealing the plating tank; and a rotation shaft for rotating the at least two plating apparatus units. The at least two plating apparatus units are rotated about the rotation axis. And a rotating mechanism.
A plating apparatus according to a second aspect of the present invention is the plating apparatus according to the first aspect, wherein the rotating mechanism that rotates the plating apparatus unit is a fixed base that rotates about the center line of the at least two plating apparatus units. The at least two plating apparatus units are attached to the upper and lower surfaces of the fixed base.
The plating apparatus according to a third aspect of the present invention is the plating apparatus according to the first aspect, wherein the rotating mechanism maintains the vertical direction in a constant direction by the weight of the plating apparatus unit. It is a rotating mechanism for rotating the unit.
A plating apparatus according to a fourth aspect of the present invention is the plating apparatus according to the first to third aspects, wherein the member to be plated is a semiconductor wafer.
According to a fifth aspect of the present invention, there is provided a plating method comprising: preparing a plating apparatus including at least two plating apparatus units; and a rotation mechanism that rotatably supports the plating apparatus unit; and a first plating apparatus unit. And placing the member to be plated in contact with the cathode electrode disposed at a position facing the anode electrode, pressing the member to be plated against the plating tank side by a holding member, and sealing from the outside, and the rotating mechanism A step of rotating the at least two plating apparatus units around a rotation axis for rotating each of the plating apparatus units; and in the second plating apparatus unit, on the upper side of the plating tank in which the anode electrode is installed A member to be plated is placed in contact with the cathode electrode, and the member to be plated is A step of sealing from the outside pressed against the Kki tank side,
Plating the member to be plated by each plating apparatus unit;
It is characterized by including.
The plating method according to a sixth aspect of the present invention is the plating method according to the fifth aspect, wherein the step of plating the member to be plated by each of the plating apparatus units comprises: The method includes a step of rotating in one direction and a step of rotating in a direction opposite to the one direction.
The plating method according to a seventh aspect of the present invention is the plating method according to any one of the fifth or sixth aspects, wherein the at least two plating apparatus units and a rotation that rotatably supports the plating apparatus unit. The step of preparing a plating apparatus provided with a mechanism is a step of preparing a plating apparatus in which the at least two plating apparatus units are arranged symmetrically with respect to a center line of the rotating mechanism.
A plating method according to an eighth aspect of the present invention is the plating method according to any one of the fifth or sixth aspects, wherein the rotating mechanism rotates each of the plating apparatus units on a plane parallel to gravity. Is a step of rotating each plating apparatus unit while maintaining a vertical direction in a constant direction by the weight of the plating apparatus unit.
According to a ninth aspect of the present invention, there is provided a plating method according to any one of the fifth to eighth aspects, wherein the plating member unit is plated by the plating apparatus unit while the plating apparatus unit is rotated by the rotating mechanism. The step of applying includes a step of rotating each plating apparatus unit in one direction by the rotation mechanism, and a step of rotating in the direction opposite to the one direction.
A plating method according to a tenth aspect of the present invention is the plating method according to the fifth to ninth aspects, wherein the member to be plated is a semiconductor wafer.

  According to this invention, since at least two plating apparatus units are arranged on the upper side and the lower side, plating can be performed using a plurality of plating apparatuses in a narrow space.

Sectional drawing of Embodiment 1 of the plating apparatus of this invention. Sectional drawing for demonstrating the first process regarding the plating method by the plating apparatus of FIG. Sectional drawing for demonstrating the process following FIG. Sectional drawing for demonstrating the process following FIG. FIG. 5 is an enlarged cross-sectional view for explaining a process following FIG. 4. FIG. 6 is an enlarged cross-sectional view for explaining a process following FIG. 5. FIG. 7 is an enlarged cross-sectional view for explaining a process following FIG. 6. FIG. 8 is an enlarged cross-sectional view for explaining a process following FIG. 7. The top view of the semiconductor wafer as a to-be-plated member plated with the plating apparatus of this invention. The enlarged plan view of the area | region A of FIG. FIG. 11 is an enlarged cross-sectional view illustrating a state before plating is performed on the semiconductor device illustrated in FIG. 10. FIG. 12 is an enlarged cross-sectional view illustrating a state after plating is performed on the semiconductor device illustrated in FIG. 11. Sectional drawing which concerns on Embodiment 2 of the plating apparatus of this invention. Sectional drawing which concerns on Embodiment 3 of the plating apparatus of this invention.

(Embodiment 1)
Hereinafter, the plating apparatus of the present invention will be described.
FIG. 1 is a sectional view showing Embodiment 1 of the plating apparatus of the present invention. The plating apparatus 10 includes two plating apparatus units 20 arranged in a stacked state on the upper side and the lower side. Each plating apparatus unit 20 is fixed to a fixed base 31. The fixing base 31 includes a fixing portion 32 having a size for mounting the bottom surface of the plating apparatus unit 20 and a frame portion 33 formed around the fixing portion 32.

  In FIG. 1, the upper plating apparatus unit 20 is mounted on the upper surface side of the fixing portion 32 of the fixing base 31, and the lower plating apparatus unit 20 is mounted on the lower surface side of the fixing section 32 of the fixing base 31. Yes. Therefore, the upper plating apparatus unit 20 and the lower plating apparatus unit 20 are arranged symmetrically with respect to the solid base 31. Although not shown, each plating apparatus unit 20 is securely fixed by a fastening member such as a bolt connected to a through hole provided with a frame portion 33 of the fixing base 31, and the plating apparatus unit 20 is fixed to the solid base 31. Even if it is disposed downward, it is securely held by the fixed base 31.

The upper and lower plating apparatus units 20 have the same structure, and the structure of one plating apparatus unit 20 will be described below.
The plating apparatus unit 20 has a peripheral wall 12 around the bottom 11 and a cup 15 (plating tank) inside the peripheral wall. The cup 15 has an opening having a circular shape in plan view at the top, and an inflow pipe 34 for inflowing the plating solution into the bottom 11 is attached. The cup 15 has an intermediate body 16 having an opening 17 at the center between the bottom 11 and the top. The intermediate body 16 has an inclined surface that increases in thickness from the opening 17 side toward the peripheral edge. Further, a lower chamber 19 having an outer shape larger than the opening 17 is formed between the intermediate body 16 and the bottom portion 11.

  The upper part of the intermediate body 16 of the cup 15 is a plating chamber 18. The periphery of the inclined surface formed on the upper surface of the intermediate body 16 is a flat surface, and a net-like anode electrode 22 is provided on the flat surface. The side wall 14 of the cup 15 has a circular shape in plan view, and cathode electrodes 23 are attached to the upper end of the side wall 14 at several locations along the outer periphery.

  Although not shown, an elastic material is provided at the upper end of the side wall 14, and the cathode electrode 23 is placed on the elastic material. For this reason, a contact portion provided at one end portion of the cathode electrode 23 and in contact with the member to be plated 51 is elastically pressed against the member to be plated 51 by partially immersing the elastic member. The member 51 to be plated is a semiconductor wafer or the like, details of which will be described later.

  On the upper end side of the side wall 14, notches are formed at several locations along the outer periphery, and the upper surface of the notch is an inclined surface 13 that sequentially descends from the plating chamber 18 side toward the outside of the plating chamber 18. The side wall 14 of the cup 15 and the peripheral wall 12 are separated from each other, and this separated portion serves as an overflow space 24 into which the plating solution overflowed from the plating chamber 18 flows. A plating solution outflow pipe 35 penetrating the peripheral wall 12 protrudes into the overflow space 24.

On the inner side of the upper end of the peripheral wall 12 of the plating apparatus unit 20, a step portion that is lower than the outer side is formed along the wall surface of the peripheral wall 12. In this step portion, along the wall surface of the peripheral wall 12, A ring-shaped seal member 25 made of rubber or the like is attached.
A pressing member 40 having a pressing plate 41 made of a leaf spring or the like is attached to the outer surface of the peripheral wall 12 of the plating apparatus unit 20 by a fastening member such as a screw. The presser member 40 includes a support member 43 that supports a lid 42 to which a presser plate 41 is attached. The pressing member 40 has an attachment portion 44 fixed to the peripheral wall 12 and a rotation shaft 45 that rotatably supports the support member 43 with respect to the attachment portion 44.

The support member 43 of the pressing member 40 can rotate clockwise and counterclockwise about the rotation shaft 45, and the plating chamber 18 is opened and sealed by this rotation.
In the state shown in FIG. 1 in which the plating chamber 18 is sealed, the member to be plated 51 connected to the cathode electrode 23 at the upper end of the side wall 14 of the cup 15 is pressed against the upper end of the side wall 14 by the pressing plate 41. In this state, the periphery of the lid 42 of the pressing member 40 presses the sealing member 25 against the upper end of the peripheral wall 12 and seals it from the outside.

  In order to seal the plating apparatus unit 20 with the presser member 40, it is necessary to lock the support member 43 in a sealed state. The lock mechanism may be a normal lock mechanism. Although not limiting, as an example of the locking mechanism, a hook-shaped locking member 49 that is rotatably attached to the peripheral wall 12 as shown by a two-dot chain line can be used. In addition, although not shown, a structure in which a mounting bracket having a through hole is fixed to the peripheral wall 12 and the support member 43, a bolt is inserted into the through hole, and the mounting bracket is tightened using a nut.

Reference numeral 36 denotes a motor, and an attachment portion 37 that is fastened to the frame portion 33 of the fixed base 31 is provided on the rotation shaft of the motor 36.
By rotating the motor 36, the fixed base 31 rotates, and accordingly, the upper and lower plating apparatus units 20 attached to the fixed base 31 rotate. By rotating the motor 36 forward and backward, the two plating apparatus units 20 fixed to the fixed base 31 rotate in one direction and in the opposite direction to one direction on a plane parallel to gravity.

  The plating solution circulates through the inflow pipe 34, the lower chamber 19, the plating chamber 18, the overflow space 24, and the outflow pipe 35 by a pump (not shown). Although not shown, the anode electrode 22 and the cathode electrode 23 are connected to a power source outside the plating apparatus, and a plating current is supplied from the power source, and a plating solution is circulated by a pump to perform electrolytic plating on the member 51 to be plated. .

In this case, since the upper and lower plating apparatus units 20 attached to the fixed base 31 can perform the plating process at the same time, the space for the plating process can be reduced. In addition, since the plating process is performed by rotating the plating apparatus unit 20 in one direction and in the opposite direction, the air adhering to the surface of the member to be plated 51 can be eliminated and a plating film having a uniform thickness can be formed. it can.
Hereinafter, a plating method using the plating apparatus 10 of the present invention will be described.

2-8 is sectional drawing of the plating apparatus 10 for demonstrating each step of the plating method of this invention.
First, the motor 36 is driven, the fixing base 31 is rotated, and the motor 36 is stopped when one of the plating apparatus units 20 reaches the upper position. In this state, the other plating apparatus unit 20 is positioned below the fixed base 31 with the one plating apparatus unit 20 turned upside down. During or before this, the plating solution is caused to flow into the plating chamber 18 of the cup 15 by driving a pump into each plating apparatus unit 20. Then, the holding member 40 of the plating apparatus unit 20 on the upper side is rotated by 90 ° about the rotation shaft 45, and one plating apparatus unit 20 is opened to the outside. This state is illustrated in FIG.

  Next, a member to be plated 51 such as a semiconductor wafer is mounted on the cathode electrode 23 attached on the side wall 14 of the cup 15 of the one plating apparatus unit 20. This state is illustrated in FIG.

  Then, the support member 43 of the pressing member 40 of one plating apparatus unit 20 is rotated about the rotation shaft 45 as a support shaft, and the member to be plated 51 is pressed by the pressing plate 41 to lock the support member 43. This state is illustrated in FIG. In this state, the member to be plated 51 is pressed by the holding plate 41 and reliably contacts the contact portion of the cathode electrode 23 provided at the upper end of the side wall 14 of the cup 15. In this state, the periphery of the lid 42 of the pressing member 40 presses the sealing member 25 against the upper end of the peripheral wall 12, and the inside of the plating apparatus unit 20 including the plating chamber 18 is sealed from the outside.

Therefore, a voltage (not shown) is applied to the anode electrode 22 and the cathode electrode 23 of one plating apparatus unit 20, and a pump (not shown) is driven to start electrolytic plating on the member 51 to be plated.
At the same time, the motor 36 is driven to rotate the fixed base 31 by 180 degrees. Then, the other plating apparatus unit 20 located below the fixed base 31 moves to an upper side position, and the other plating apparatus unit 20 moves below the fixed base 31 in an upside down state. .
In this state, the pressing member 40 of the other plating apparatus unit 20 is rotated about the rotation shaft 45 to open the other plating apparatus unit 20 to the outside. This state is illustrated in FIG. In this case, in one plating apparatus unit 20, the plating process is performed even during rotation and during this operation.

For example, a member to be plated 51 such as a semiconductor wafer is mounted on the attached cathode electrode 23. This state is illustrated in FIG.
Then, the support member 43 of the pressing member 40 of the other plating apparatus unit 20 is rotated about the rotation shaft 45 as a support shaft, and the member to be plated 51 is pressed by the pressing plate 41 to lock the support member 43. This state is illustrated in FIG. In this state, the member to be plated 51 is pressed by the holding plate 41 and reliably contacts the contact portion of the cathode electrode 23 provided at the upper end of the side wall 14 of the cup 15. In this state, the periphery of the lid 42 of the pressing member 40 presses the sealing member 25 against the upper end of the peripheral wall 12, and the inside of the plating apparatus unit 20 including the plating chamber 18 is sealed from the outside.

  Therefore, a voltage is applied to the anode electrode 22 and the cathode electrode 23 of the other plating apparatus unit 20 by a power source (not shown), and a pump (not shown) is driven to start electrolytic plating on the member 51 to be plated.

FIG. 8 shows a state in which electrolytic plating is performed in both the upper and lower plating apparatus units 20 fixed to the fixing base 31 in this way.
In this state, in the upper plating apparatus unit 20, the plating solution discharged from the inflow pipe 34 to the lower chamber 19 of the cup 15 by the pump spreads to an appropriate size at the opening 17 of the intermediate body 16. It flows into the plating chamber 18 and is further expanded in the plating chamber 18 to come into contact with the central portion of the member to be plated 51 and the vicinity thereof. The plating solution flows toward the peripheral edge of the cup 15 along the surface of the member to be plated 51. That is, plating is performed while the plating solution contacts the central portion of the member 51 to be plated as a jet. The plating solution that has overflowed once flows into the overflow space 24 from the upper part of the inclined surface 13 at the notch provided in the upper peripheral portion of the side wall 14 of the cup 15, and then from the outflow pipe 35. It flows out of the device.

Also in the lower plating apparatus unit 20, a plating process is performed by substantially the same action as the upper plating apparatus unit 20. However, in the plating apparatus unit 20 located below, the top and bottom are reversed. For this reason, the member 51 to be plated is always buried in the plating solution, and a liquid pressure corresponding to the depth of the plating solution above it is applied to the surface to be plated. Since the liquid pressure is applied, the jet pressure of the plating solution acting on the member 51 to be plated through the plating solution contained in the plating chamber 18 from the inflow pipe 34 is the jet pressure in the upper plating apparatus unit 20. Smaller than.
However, since each plating apparatus unit is rotated so that the plating process is performed even in the state of being positioned on the upper side, at least in the plating process in the state of being positioned on the upper side, it adheres to the member to be plated. Air is excluded. Once the air is excluded, the surface to be plated of the member to be plated becomes hydrophilic, and thereafter the penetration of the plating solution becomes easy.

In addition, in the present invention, the rotation direction of the motor 36 is reversed at a predetermined timing, and each plating apparatus unit 20 is switched between rotation in one direction and rotation in the reverse direction. At the time of switching in the rotation direction, the plating solution in the plating chamber 18 of each plating apparatus unit 20 is greatly shaken. The air adhering to the member 51 to be plated is eliminated by shaking the plating solution.
As described above, in the present invention, since the plating apparatus unit is rotated in one direction and in the opposite direction, the air adhering to the member 51 to be plated is eliminated, and plating without a cavity is performed. Can be applied.
Next, the necessity to exclude the air adhering to the surface of the member to be plated 51 described above will be described.

  FIG. 9 is a plan view of the semiconductor wafer 1 as an example of a member to be plated, and FIG. 10 is an enlarged view of the semiconductor device region A illustrated in FIG. Semiconductor device formation regions A are arranged in a matrix on the semiconductor wafer 1 in the row and column directions. By cutting the semiconductor wafer 1 along the dicing line 2, a large number of semiconductor devices having a structure formed in the semiconductor device formation region A can be obtained simultaneously.

  In the semiconductor device formation region A, as shown in FIG. 10, the connection pads 3 are arranged along each side of the four sides, and a large number of bumps are formed inside the region where the connection pads 3 are arranged. The electrodes 5 are arranged. The bump electrodes 5 are normally arranged in an annular shape from the peripheral side of the semiconductor device formation region A toward the center, but may be arranged differently.

Each bump electrode 5 and the connection pad 3 are connected by a wiring 4. Although not shown, a pad portion having a size substantially the same as or slightly larger than the diameter of the bump electrode 5 is formed in a portion corresponding to the bump electrode 5 of each wiring 4. 4 pad portions (see 4a in FIG. 11).
FIG. 11 is an enlarged cross-sectional view of the semiconductor device formation region A shown in FIG. However, in order to clarify the drawing, FIG. 11 shows that one bump electrode 5 (see FIG. 12) is formed in the vicinity of each side in the semiconductor device formation region A.

  On the main surface of the semiconductor wafer 1, a plurality of connection pads 3 connected to the integrated circuit 1a are formed. On the main surface of the semiconductor wafer 1, a first insulating film 6 having an opening exposing the central portion of the connection pad 3 is formed. The first insulating film 6 is made of an inorganic material such as silicon oxide or silicon nitride.

A second insulating film 7 is formed on the first insulating film 6. The second insulating film 7 is made of an organic resin material such as polyimide resin or PBO (Poly-p-Phenylene-Benzobisoxazole) resin.
On the second insulating film 7, a wiring 4 having one end connected to the connection pad 3 through the opening of the second insulating film 7 is formed. The wiring 4 has a two-layer structure of a first wiring 4-1 and a second wiring 4-2 formed on the first wiring 4-1.
A photoresist mask 8 is formed on the second insulating film 7 and the wiring 4. In the photoresist mask 8, an opening 8 a that exposes the pad portion 4 a of the wiring 4 is formed.

  The semiconductor wafer 1 as an example of the member 51 to be plated has the above-described configuration. The semiconductor wafer 1 is placed on the upper surface of the side wall 14 of the plating apparatus unit 20 with the photoresist mask 8 side facing downward (plating chamber 8 side) and the first wiring 4-1 in contact with the cathode electrode 23. Place. When a voltage is applied to the anode electrode 22 and the cathode electrode 23, a plating current is supplied between the anode electrode 22 and the cathode electrode 23 using the first wiring 4-1 as a current path. Thus, a plating film is formed on the pad portion 4a of the wiring 4 exposed from the opening 8a of the photoresist mask 8, and finally, the bump electrode 5 shown in FIG. 12 is formed. FIG. 12 is a cross-sectional view of the semiconductor device formation region A in a state where the bump electrode 5 is formed by electrolytic plating and the photoresist mask 8 is then peeled off.

  When such a bump electrode 5 is formed on the semiconductor wafer 1 by electrolytic plating, air enters the opening 8a of the photoresist mask 8 before the start of plating. This air is not excluded simply by being immersed in the plating solution, but remains in the opening 8a. If air remains, the plating solution does not come into contact with the pad 4a, so that no plating film is formed. Even if air remains in a part on the pad part 4a, the part becomes a cavity because the plating film is not formed. Therefore, it is necessary to perform plating so that air is excluded from the inside of the opening 8a of the photoresist and the mask 8.

  In the present invention, in addition to the action of excluding air from the opening 8a of the photoresist mask 8 by jetting the plating solution against the member 51 to be plated, each plating apparatus unit 20 is moved in one direction and in the opposite direction. Rotate. When the rotation direction of the plating apparatus unit 20 is switched, the plating solution in the plating chamber 18 is shaken, so that the action of removing the air adhering to the member 51 to be plated occurs.

In the plating method of the present embodiment, there are various modes as described below for the timing of the plating processing time by the two plating apparatus units 20.
(1) While rotating the plating apparatus unit in one direction and in the opposite direction, plating is performed in both plating apparatus units 20 including during rotation.
(2) The plating apparatus unit is intermittently rotated in one direction and the reverse direction, and plating is performed in both of the plating apparatus units 20 in a stopped state.
(3) While rotating the plating apparatus unit intermittently in one direction and in the opposite direction, plating is performed in both plating apparatus units 20 including during rotation.
(4) In the above (1) to (3), plating is performed only in the upper plating apparatus unit 20.
In the above (4), the plating film thickness is further uniformed by performing the plating only under the condition that the action of the plating liquid jet is large.
However, the present invention does not require that each plating apparatus unit 20 be rotated in one direction and the opposite direction. This will be described later together with the third embodiment.

  In the plating apparatus of Embodiment 1 and the plating method using the plating apparatus, since the plating apparatus unit 20 is fixed to the upper surface and the lower surface of the fixed base 31, it is possible to perform the plating process by the plurality of plating apparatus units 20 in a narrow space. It becomes possible. Further, since plating is performed by rotating each plating apparatus unit in one direction and in the opposite direction, it is possible to achieve an effect that the plating film thickness can be made more uniform.

(Embodiment 2)
FIG. 13: is sectional drawing which shows Embodiment 2 of the plating apparatus of this invention.
The difference between the plating apparatus 70 of the second embodiment and the plating apparatus 10 of the first embodiment is that each plating apparatus unit 80 does not have an overflow space.
Hereinafter, although the plating apparatus 70 of Embodiment 2 is demonstrated centering on this point, the same drawing reference number is attached | subjected to the same member as the plating apparatus 10 of Embodiment 1, and the description is abbreviate | omitted.

The plating apparatus 70 according to the second embodiment has a plating apparatus unit 80 fixed on the upper and lower surfaces of the fixing base 31 in line symmetry with the fixing base 31 as the center, and the fixing base 31 is parallel to gravity by the motor 36. On the other hand, it is the same as in the first embodiment in that it is rotated clockwise and counterclockwise.
However, each plating apparatus unit 80 in the second embodiment does not have an overflow space.

  That is, the plating apparatus unit 80 is entirely cup-shaped, and the peripheral wall 81 of the plating apparatus unit 80 is a side wall of the cup-shaped plating tank. The plating solution discharged from the inflow pipe 34 to the lower chamber 82 flows into the plating chamber 83, contacts the member 51 to be plated by a jet, and then flows out of the apparatus from the outflow pipe 35 provided at the periphery of the plating chamber 83. To leak. However, a plurality of outflow pipes 35 are provided around the peripheral wall 81 at a predetermined interval.

  Also in the plating apparatus 70 of the second embodiment, the timing of the plating processing time by the two plating apparatus units 80 can be performed in the same manner as in the first embodiment. Also in the plating apparatus 70 of Embodiment 2, the same effect as the plating apparatus 10 of Embodiment 1 can be produced. In addition, the plating apparatus unit 80 according to the second embodiment has a simple structure as compared with the plating apparatus unit 20 according to the first embodiment, which is advantageous in terms of cost and allows the apparatus to be downsized.

(Embodiment 3)
FIG. 14 shows a cross-sectional view of Embodiment 3 relating to the plating apparatus of the present invention. A feature of the plating apparatus 90 of the third embodiment is that each plating apparatus unit 20 is rotated while maintaining a posture in which the open side of the plating chamber 18 is positioned upward by the action of gravity. . In other words, even if the motor 36 is driven to rotate the plating apparatus unit on a plane parallel to gravity, the vertical direction of each plating apparatus unit does not change.
Since each plating apparatus unit 20 has the same structure as that of the first embodiment, description of the structure is omitted, and a structure for rotating the plating apparatus unit 20 will be described.

  The plating apparatus unit 20 is placed on the fixed base 91. The two plating apparatus units 20 constituting the plating apparatus 90 in the third embodiment are rotated while maintaining the same vertical direction by the action of gravity. In other words, the vertical direction is rotated by the rotation. Since it does not change, the attachment structure to the fixed base 91 does not need to be as strong as in the first embodiment.

  The fixed base 91 is supported by two support rods 93 having a circular cross section through four link plates 92. Here, only two link plates 92 are shown in FIG. 14, but the two link plates 92 are shown on the front side of the plating apparatus unit 20, and also on the rear side of the plating apparatus unit 20. Two are provided. The two link plates 92 on the front side and the rear side arranged on the left side of the plating apparatus unit 20 are connected to one connection plate 93. Two link plates 92 on the right side of the plating apparatus unit 20 on the front side and the rear side are connected to one connecting plate 93.

  Each link plate 92 is integrally formed with a pin 92 a having a circular cross section, and this pin 92 a is inserted so as to loosely fit into a fitting hole formed in the connecting plate 93. For this reason, when the connecting plate 93 rotates, the link plate 92 rotates together with the connecting plate 93 while maintaining the same direction due to its own weight. A fitting hole for loosely fitting the support bar 94 is formed at the center of each connecting plate 93 in the length direction (front-back direction of the paper surface), and the support bar 94 is inserted into the fitting hole. The support bar 94 is fixed to the rotating plate 95.

  Therefore, when the rotation plate 95 rotates and the support rod 94 rotates, each connection plate 93 loosely fitted in the fitting hole of each support rod 94 rotates together with the support rod 94 while maintaining the same orientation by its own weight. To do. Thus, the support rod 94, the connecting plate 93, and the link plate 92 constitute a support mechanism that causes the plating apparatus unit 20 to rotate in the state where the vertical direction is the same due to its own weight.

  Reference numeral 96 denotes a fixed frame of the plating apparatus 90, and the fixed frame 96 rotatably supports the shaft 97a of the large gear 97. A small gear 98 is attached to the rotation shaft of the motor 36 and meshes with the large gear 97 to transmit the rotation of the motor 36 to the large gear 97.

  In addition, when opening and closing the presser member 40, a structure is adopted in which the presser member 40 is slid and opened in the front-rear direction of the plating apparatus 90 so that the support rod 94 does not become an obstacle. In this case, if the fixed frames 96 are disposed on the left and right sides of the plating apparatus unit 20 so that the support bar 94 does not extend above the plating apparatus unit 20, the support bar 94 opens and closes the presser member 40. Therefore, it is not necessary to employ the above-described slide mechanism.

  The plating apparatus 90 has such a structure. When the motor 36 rotates, the rotating plate 95 rotates on a plane parallel to the gravity via the small gear 98 and the large gear 97, and with the rotation of the rotating plate 95. The support bar 94 rotates. As described above, since the support rod 94 is loosely fitted in the fitting hole of the connecting plate 93 and the pin 92a of the link plate 92 is connected to the connecting plate 93, the plating apparatus attached to the fixed base 91 is provided. The unit 20 rotates without changing the vertical direction. Therefore, in the plating apparatus 90, each plating apparatus unit 20 always rotates while maintaining the same direction, so that the plating solution is always applied to the member 51 to be plated by a jet from below. Thus, even if each plating apparatus unit 20 rotates, the flow of the plating solution is not changed, so that adjustment for uniformizing the plating film thickness is easy.

  In the plating apparatus 90 of the third embodiment, the upper and lower plating apparatus units 20 have the same jet action as that of a normal jet-type plating apparatus without rotating. Therefore, even if each plating apparatus unit 20 is not switched in one direction and the opposite direction and rotated, an air exclusion effect larger than that of a normal jet-type plating apparatus can be obtained. However, under conditions where it is difficult to eliminate the air of the member to be plated, such as when the photoresist mask is very thick, it is possible to achieve a great effect by rotating each plating apparatus unit 20 by switching between one direction and the opposite direction. it can.

  Also in the plating apparatus 90 of the third embodiment, the timing of the plating processing time by the two plating apparatus units 90 can be performed in the same manner as in the first embodiment. Moreover, in the plating apparatus 90 in Embodiment 3, since each plating apparatus unit 20 always rotates, maintaining the same direction, the plating film thickness can be made uniform further. In addition, since each plating apparatus unit 20 does not change its orientation with rotation, safety is improved, and the structure for mounting each plating apparatus unit 20 to the fixed base is simplified, so there is a cost advantage. .

  In the plating apparatus of the third embodiment described above, the case where the plating apparatus unit 20 of the first embodiment is used as the plating apparatus unit has been described, but the same applies to the plating apparatus unit 80 of the second embodiment. Is possible.

  In the first embodiment and the second embodiment, the upper and lower plating apparatus units are arranged in line symmetry, but may be arranged in point symmetry, in other words, the left and right sides may be reversed. Good.

  In each embodiment, two plating apparatus units are installed, but more plating apparatus units can be installed.

  In addition, the plating apparatus of the present invention can be variously modified within the scope of the invention. In short, each of them is a plating tank, an anode electrode installed in the plating tank, and a plating tank. The piping for circulating the plating solution inside, the cathode electrode provided at the upper part of the plating tank, the seal member provided at the upper peripheral part of the plating tank, and the member to be plated connected to the cathode are pressed to the plating tank side. And at least two plating apparatus units having a pressing member that presses the sealing member to seal the plating tank, and a rotation mechanism that rotates at least two plating apparatus units in a plane parallel to gravity. That's fine.

  Further, the plating method of the present invention includes a step of preparing a plating apparatus including at least two plating apparatus units and a rotation mechanism that rotatably supports the plating apparatus unit, and the anode electrode in the first plating apparatus unit. A plating member unit is arranged on the upper part of the installed plating tank by bringing the member to be plated into contact with the cathode electrode, pressing the member to be plated against the plating tank side by a holding member and sealing it from the outside, and a rotating mechanism. In a plane parallel to the gravity, and in the second plating apparatus unit, a member to be plated is disposed in contact with the cathode electrode on the upper side of the plating tank in which the anode electrode is installed. Pressing against the plating tank side with the holding member and sealing it from the outside, A step of plating the Kki member, as long as it contains a.

DESCRIPTION OF SYMBOLS 10, 70, 90 Plating apparatus 11 Bottom part 12 Perimeter wall 14 Side wall 15 Cup 18 Plating chamber 22 Anode electrode 23 Cathode electrode 24 Overflow opening 25 Seal member 31 Fixing base 34 Inflow pipe 35 Outflow pipe 36 Motor 40 Holding member 41 Presser plate 42 Lid 51 Plated member 91 Fixing base 92 Link plate 93 Connection plate 94 Support rod 95 Rotating body

Claims (10)

Each includes a plating tank, an anode electrode installed in the plating tank, a pipe for circulating a plating solution in the plating tank, a cathode electrode provided at a position facing the anode electrode, and an outer periphery of the cathode electrode A seal member provided at a peripheral portion, and at least two press members for pressing the member to be plated connected to the cathode electrode to the plating tank side and pressing the seal member to seal the plating tank A plating unit;
A rotation mechanism for rotating the at least two plating apparatus units, and a rotation mechanism for rotating the at least two plating apparatus units around the rotation axis;
A plating apparatus comprising:   2. The plating apparatus according to claim 1, wherein a rotation mechanism that rotates the plating apparatus unit includes a fixed base that rotates about a center line of the at least two plating apparatus units, and the at least two plating apparatus units include: A plating apparatus, which is attached to the upper and lower surfaces of the fixed base.   2. The plating apparatus according to claim 1, wherein the rotation mechanism is a rotation mechanism that rotates each plating apparatus unit while maintaining a vertical direction in a constant direction by the weight of the plating apparatus unit. 3. Plating equipment.   4. The plating apparatus according to claim 1, wherein the member to be plated is a semiconductor wafer. Providing a plating apparatus comprising at least two plating apparatus units and a rotation mechanism that rotatably supports the plating apparatus unit;
In the first plating apparatus unit, a member to be plated is placed in contact with a cathode electrode disposed at a position facing the anode electrode, and the member to be plated is pressed against the plating tank side by a holding member and sealed from the outside. Steps,
Rotating the at least two plating apparatus units around a rotation axis for rotating the plating apparatus units by the rotation mechanism;
In the second plating apparatus unit, a member to be plated is disposed in contact with the cathode electrode on the upper side of the plating tank in which the anode electrode is installed, and the member to be plated is pressed against the plating tank side by a holding member from the outside. Sealing, and
Plating the member to be plated by each plating apparatus unit;
The plating method characterized by including.   6. The plating method according to claim 5, wherein the step of plating the member to be plated by each of the plating apparatus units is opposite to the direction of rotating each of the plating apparatus units in one direction by the rotating mechanism. And a step of rotating in the direction.   7. The plating method according to claim 5, wherein the step of preparing a plating apparatus including a rotation mechanism that rotatably supports the at least two plating apparatus units and the plating apparatus unit includes: A plating method comprising preparing a plating apparatus in which the at least two plating apparatus units are arranged symmetrically with respect to a center line of a rotating mechanism.   7. The plating method according to claim 5, wherein the step of rotating each of the plating apparatus units on a plane parallel to gravity by the rotating mechanism is vertically oriented by the weight of the plating apparatus unit. A plating method comprising the step of rotating each plating apparatus unit while maintaining a constant direction.   9. The plating method according to claim 5, wherein the step of plating the member to be plated by each of the plating apparatus units while rotating each of the plating apparatus units by the rotating mechanism is performed by the rotating mechanism. A plating method comprising: rotating a unit in one direction; and rotating the unit in a direction opposite to the one direction.   10. The plating method according to claim 5, wherein the member to be plated is a semiconductor wafer.

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