JP3379216B2 - Semiconductor manufacturing method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a semiconductor used in a jet-type plating method or a chemical conversion method, which is suitable for forming bump electrodes or wirings on a semiconductor wafer or performing chemical conversion treatment. The present invention relates to a semiconductor manufacturing method capable of performing uniform plating and the like.

[0002]

2. Description of the Related Art When manufacturing a semiconductor device, a semiconductor wafer may be subjected to a plating treatment or a chemical conversion treatment. For example, when a DHD (Double Heatsink Diode) type diode is manufactured, or when a TAB (Tape Automated Diode) is manufactured.
When manufacturing a Bounding) type semiconductor device, a semiconductor wafer is made of Ag, Au, Cu, solder, etc.
A bump electrode of about μm is formed. The wiring is formed of Au or other metal. When forming such bump electrodes and wirings, a jet type plating apparatus a shown in FIG. 11 is generally used. Specifically, as shown in FIG. 11, a jet type plating tank c for introducing the plating solution b from the center of the bottom surface and overflowing it from above; a lower electrode d arranged in this plating tank c; a plating tank c
And an upper electrode e using a plurality of cathode pins, which is disposed on the upper part of the substrate so as to slightly project from the upper end of the plating bath c and holds the semiconductor wafer w with the surface to be processed facing downward; the semiconductor wafer w There is a method of applying a current between the upper and lower electrodes e and d while jetting the plating solution b on the surface to be processed to subject the semiconductor wafer w to the plating process.

[0003]

However, in the conventional method for manufacturing a semiconductor using the plating apparatus a, in the initial stage of operation, air is first introduced into the piping connected to the circulation pump. And the like are accumulated, and the plating process is performed while the bubbles such as the air are still attached to the surface to be processed of the semiconductor wafer w.
By performing the plating process with bubbles such as hydrogen gas generated by the chemical reaction in the plating tank c adhering to the surface to be processed of the semiconductor wafer w, air and hydrogen on the surface to be processed of the semiconductor wafer w can be obtained. There is a problem in that a defective product may be generated because the plating at a location where bubbles such as gas adhere is thinned or, in a severe case, the plating is not performed.

Therefore, it is an object of the present invention to provide a semiconductor manufacturing method capable of performing highly accurate plating processing and the like without producing defective products.

[0005]

In order to achieve the above object, a semiconductor wafer is held above a treatment tank having an open upper side with its surface to be treated down, and a treatment liquid is applied to the surface to be treated of the semiconductor wafer. In a semiconductor manufacturing method, in which a current is passed between the upper and lower electrodes while jetting to process semiconductor wafers such as plating and chemical conversion , the processing tank is processed before starting steady operation.
Repeatedly actuating and stopping the circulation pump that feeds the liquid
Between the processed surface of the semiconductor wafer and the processing liquid
Contact is intermittently repeated to the surface to be processed of the semiconductor wafer.
Removes bubbles such as hydrogen gas that adhere to the semiconductor wafer.
Intermittently during the process of improving the wettability of the har and during steady operation.
The circulation pump is stopped at this time, and the processed surface of the semiconductor wafer is treated.
Treatment of semiconductor wafers is possible by releasing contact with the physical fluid.
A step of removing bubbles such as hydrogen gas adhering to the surface.
This is a method characterized by a stroke .

Further, the treated surface of the semiconductor wafer above the processing tank which is open upward and held down, the semiconductor by applying a current between the upper and lower electrodes while jetting the processing liquid to the processing surface of the semiconductor wafer In a semiconductor manufacturing method in which wafers are subjected to processing such as plating and chemical conversion , the processing solution is sent to the processing tank.
Rotate the circulating pump at a high speed to process the processing tank and circulating pump.
Process to remove bubbles such as air in the piping that connects the pipes, etc.
And before starting steady operation, start and stop the circulation pump.
The surface to be processed of the semiconductor wafer is repeated alternately.
Contact with the processing solution intermittently and repeatedly
The bubbles of hydrogen gas etc. adhering to the surface to be treated of
Process for improving the wettability of semiconductor wafers and steady operation
Occasionally, the circulation pump is stopped intermittently, and the semiconductor wafer
By releasing the contact between the surface to be processed and the processing liquid, the semiconductor wafer
Removal of bubbles such as hydrogen gas adhering to the treated surface of the wafer
The method is characterized by providing a step and.

[0007]

[0008]

[0009]

As described above, according to the semiconductor manufacturing method of the second aspect of the present invention, first, the circulation pump for feeding the treatment liquid to the treatment tank is rotated at a high speed to connect the treatment tank with the circulation pump. Remove bubbles such as air inside.

Then, the semiconductor of claim 1 and claim 2
According to the manufacturing method, the operation of the circulation pump is alternately repeated before the steady operation is started, so that the contact between the surface to be processed of the semiconductor wafer and the processing liquid is intermittently repeated to thereby cover the semiconductor wafer. It removes bubbles such as hydrogen gas adhering to the treated surface and improves the wettability of the semiconductor wafer.

Next, the semiconductor wafer is held above the surface of the processing tank whose upper side is open with the surface to be processed facing downward, and a current is passed between the upper and lower electrodes while jetting the processing liquid onto the surface to be processed of the semiconductor wafer. Although the semiconductor wafer is subjected to treatments such as plating and chemical conversion, the circulating pump is stopped during the steady operation to release the contact between the treated surface of the semiconductor wafer and the treated liquid, and thus the treated surface of the semiconductor wafer. It is possible to perform the plating treatment while removing bubbles such as hydrogen gas attached to the.

[0012]

[0013]

The details of the present invention will be described with reference to the embodiments shown in the drawings. First, the semiconductor manufacturing apparatus A will be described, and more specifically, a semiconductor manufacturing method performed using the semiconductor manufacturing apparatus A will be sequentially described. The semiconductor manufacturing equipment A is
As shown in FIGS. 1 and 2, the treatment tank 1, the lower electrode 2, the upper electrode 3, a protective pad 4 for preventing the upper electrode 3 from coming into contact with the treatment liquid S, an outer container 5, a circulation pump 6 It is composed of.

First, the processing tank 1 is a container made of resin such as polypropylene and having an open top as shown in FIG.

The lower electrode 2 is a net-like member arranged in the processing tank 1 as shown in FIGS. 1 and 2, and is an anode.

As shown in FIGS. 3 and 4, the upper electrode 3 is a protective pad 4 for preventing contact with the processing liquid S, and is an outer cover around the tip of the cathode pin 7. .

First, the cathode pin 7 is bent in a U shape as a whole, and one of the cathode pins 7 is set to be long, and the shorter cathode pin 7a is for supporting the semiconductor wafer W. The other long electrode is for making a connection with an electric wire.

The mount 8 is, as shown in FIGS. 3 and 4,
Cathode pins 7 are inserted from the back side, guide holes 10 are bored in the substrate 9 so that the tips of the cathode pins 7 project from the front surface, and a protective pad 4 is provided to cover the periphery of the tips of the short cathode pins 7. A holding hole 11 having a bottom for accommodating is provided, and through holes 13 for inserting the fixing bolts 12 are provided on both sides of the substrate 9.

As shown in FIGS. 3 and 4, the protective pad 4 has a through hole 14 for positioning the cathode pin 7 in the axial direction.
Is a cylindrical body having a corrugated structure 4a that is expandable and contractible in the axial direction in the upper part of the cylindrical body, or the lower part of the cylindrical body, the central part, or the entire cylindrical body, although not particularly shown. It is integrally molded.

Further, the protective pad 4 is not limited to the above-mentioned one, and may be any member that can expand and contract in the axial direction. For example, the protection pad 4 shown in FIG. 6 is made of a soft member such as silicon rubber and is made to be able to expand and contract in the axial direction by utilizing the elastic force of the soft member.

In the upper electrode 3, the cathode pin 7 is inserted into the guide hole 10 of the mounting base 8 from the back side, and both tips of the cathode pin 7 are erected from the surface of the mounting base 8 as shown in FIG. In this state, the mounting base 8 is attached to the open end of the processing tank 1 with the fixing bolts 12 and 12, and the tip of one cathode pin 7a is inserted into the through hole 14 of the protective pad 4 to hold the mounting base 11 in the holding hole 11. By installing the protection pad 4 inside, the entire tip portion of one cathode pin 7a is covered with this protection pad 4.

Reference numeral 15 shown in FIGS. 1 and 2 is a stop pin for contacting the end of the semiconductor wafer W for positioning.

The outer container 5 is a processing tank 1 as shown in FIG.
It is a container for receiving the processing liquid S that has overflowed from the container, and is a container whose upper part is opened. The processing liquid S that overflows into the external container 5 in this manner is circulated using the circulation pump 6 at the lower inlet of the processing tank 1. The structure is such that it is sent to the department.

Further, in the semiconductor manufacturing apparatus A of the illustrated example, as shown in FIG. 7, the connecting member 16 electrically connected to the lower electrode 2 disposed in the processing bath 1 is passed through the processing bath bottom 1a. The connection member 16 is connected to the connection bolt 17
And clamping bolts 18, specifically, the processing tank 1
A recess 19 is provided on the bottom surface, and the tip of the clamping bolt 18 is moved from the processing tank 1 to the external container 5 so that the head 17a is located in the recess 19.
The nut 20 is screwed onto the threaded shaft 17b of the connection bolt 17 and fastened and fixed, and the pinch bolt 18 is screwed onto the head 17a of the connection bolt 17 with the mesh-shaped lower electrode 2 interposed. , And the nut 20 screwed onto the screw shaft 17a of the connecting bolt 17.
The nut 20 is screwed with the connection terminal 21 interposed between the two and the electric wire is connected to the connection terminal 21.
Further, as the holding bolt 18 and the fixing bolt 12, titanium in which platinum is plated in consideration of corrosion resistance is preferable.

In the connection member 21 described above, the connection bolt 17 and the clamping bolt 18 are used in consideration of workability and the like.
The structure is not limited to this, and it is also possible to use a corrosive electric wire or the like.

According to the semiconductor manufacturing apparatus A, as shown in FIG.
As shown in FIG. 4, when the semiconductor wafer W is placed on the protection pad 4 covered with the cathode pin 7 in the upper electrode 3, the protection pad 4 is placed by the weight of the semiconductor wafer or by adding a weight (not shown). A force acts in a direction to compress the semiconductor wafer W in the axial direction, that is, the bellows portion 4a of the protection pad 4 contracts from the state shown in FIG. 5A to the state shown in FIG. Treated surface and upper electrode 3
The tip of the cathode pin 7 is contacted.

Therefore, the upper electrode 3 is kept in a hermetically sealed state by the protective pad 4 without coming into contact with the outside.
Since the semiconductor wafer W is supported by the cathode pins 7 of the semiconductor wafer W, the semiconductor wafer W is held above the processing tank 1 having an open upper side with its surface to be processed facing down, and the semiconductor wafer W is processed on the surface to be processed. While jetting the liquid S, the upper and lower electrodes 3,
A current is passed between the two to perform processing such as plating and chemical conversion on the semiconductor wafer W.

Next, a semiconductor manufacturing method in which the semiconductor manufacturing apparatus A is used for plating will be described in detail with reference to the time chart shown in FIG.

First, as shown in "Pump operation at the start", the circulation pump 6 for feeding the processing liquid S from the ejection hole 22 of the processing tank bottom 1a is operated to increase the number of revolutions of the processing tank 1. The processing liquid S in the inside is raised and brought into contact with the surface to be processed of the semiconductor wafer W, and the circulation pump 6 is operated at a higher speed here, whereby the processing liquid S is rapidly jetted and is in the pipe. Bubbles such as air can be discharged. Then, by stopping the circulating pump 6 that has been operated, as shown in FIGS. 9A to 9B, the liquid level of the processing liquid S is lowered, and the processed surface of the semiconductor wafer W and the processing liquid are lowered. By removing the contact of S, the bubbles A such as air adhering to the surface to be processed of the semiconductor wafer W can be removed. By thus repeating the rotation and stop of the circulation pump several times alternately, The bubbles A such as air attached to the surface to be processed can be removed, and the wettability between the surface to be processed of the semiconductor wafer W and the processing liquid S is improved to facilitate the plating process.

Further, as shown in "Pump / Energizing operation during processing", the circulation pump 6 is operated to raise the processing liquid S, and the processing liquid S is jetted to the surface to be processed of the semiconductor wafer W for plating. Continuous plating can be performed by turning on the power. After the plating process is performed for a certain period of time, the circulation pump 6 is stopped so that the state shown in FIGS.
As shown in (b), the liquid surface of the processing liquid S is lowered to release the contact between the surface to be processed of the semiconductor wafer W and the processing liquid S, and the hydrogen generated by the chemical reaction attached to the surface to be processed of the semiconductor wafer W is generated. Bubbles H such as gas can be removed, the circulation pump 6 is again operated to raise the processing liquid S, the processing liquid S is jetted to the surface to be processed of the semiconductor wafer W, and the plating power is turned on to continue. Can be plated. As described above, in the steady operation of the plating process, the operation of intermittently stopping the circulation pump 6 is repeated, so that hydrogen gas or the like generated by a chemical reaction in the processing tank 1 attached to the surface to be processed of the semiconductor wafer W is generated. Bubble H can be removed.

By automatically performing the series of operations described above under feedback control using a computer,
It is possible to form a uniform plating layer and perform highly accurate plating processing.

In the example described above, the circulating pump 6 is stopped to lower the processing liquid S to release the contact between the surface to be processed of the semiconductor wafer W and the processing liquid S.
The processing liquid S may be lowered by closing the jetting hole 22 penetrating the processing tank bottom portion 1a with a shielding plate or the like.

By using the semiconductor manufacturing method as described above,
Before performing the plating treatment, the circulation pump 6 is rotated at a high speed to jet the treatment liquid S, whereby bubbles A such as air in the pipe can be discharged, and thereafter, the circulation pump is rotated and stopped. By alternately repeating several times,
Bubbles A such as air adhering to the surface to be processed of the semiconductor wafer W can be removed, and the wettability between the surface to be processed of the semiconductor wafer W and the processing liquid S is improved to facilitate the plating process. You can

After the steady operation of the plating process is started, the circulating pump 6 is stopped at regular intervals to lower the surface of the processing liquid S, and the surface of the semiconductor wafer W to be processed and the processing liquid S. The uniform plating treatment can be performed by releasing the contact with and removing the bubbles H such as hydrogen gas attached to the surface to be treated of the semiconductor wafer W. Therefore,
As in the prior art, it is possible to eliminate a plating defect caused by adhesion of bubbles A such as air in the pipe and bubbles H such as hydrogen gas generated by a chemical reaction in the processing tank 1, Highly accurate plating processing can be performed.

Finally, another semiconductor manufacturing method in which plating is performed using this semiconductor manufacturing apparatus A will be described in detail with reference to the time chart shown in FIG.

Basically, the movement up to the steady operation is the same as that of the semiconductor manufacturing method described above.
By intermittently rotating the circulation pump 6 that feeds the processing liquid S to the high speed, the amount of the processing liquid S jetted to the surface to be processed of the semiconductor wafer W is increased, and the hydrogen gas adhering to the surface to be processed of the semiconductor wafer is increased. Bubbles H etc. can be removed.

By using the semiconductor manufacturing method as described above,
By intermittently rotating the circulation pump 6 at high speed, the amount of the processing liquid S jetted onto the surface to be processed of the semiconductor wafer W is increased, and bubbles H such as hydrogen gas adhering to the surface to be processed of the semiconductor wafer W are removed. Therefore, uniform plating treatment can be performed. Moreover, according to this method, it is possible to perform the plating process by continuously rotating the pump 6 while rotating the circulation pump 6 at a high speed during the continuous operation. Therefore, it is necessary to stop the circulation pump 6 and interrupt the plating process. Therefore, bubbles H such as hydrogen gas attached to the surface to be processed of the semiconductor wafer can be efficiently removed.

The method of manufacturing the semiconductor shown in FIG.
For the selection of the semiconductor manufacturing method shown in 10, a preferable method can be appropriately used depending on the treatment liquid S, the type of the semiconductor wafer W, and the like.

[0039]

Since the present invention is configured as described above, it has the following effects. According to the method of manufacturing a semiconductor according to claim 1 , the circulation is performed before the plating treatment or the like.
By alternately rotating and stopping the pump several times
Air bubbles on the surface of the semiconductor wafer to be processed.
It can be removed and the semiconductor wafer can be processed.
Improves the wettability between the treatment surface and the processing liquid and performs plating
Can be made easier. Therefore, as in the past,
Of plating caused by bubbles such as air accumulated in the
It is possible to eliminate defects and perform highly accurate plating processing.
I can.

According to the semiconductor manufacturing method of the second aspect , the circulation pump is rotated at a high speed before the plating treatment and the like.
The processing liquid is jetted, so that the
Bubbles such as air can be discharged and removed.

[0041]

[0042]

[Brief description of drawings]

FIG. 1 is a principle diagram showing the entire semiconductor manufacturing apparatus.

FIG. 2 is a plan view of a semiconductor manufacturing apparatus.

FIG. 3 is an enlarged sectional view of an upper electrode.

FIG. 4 is an exploded perspective view of an upper electrode.

FIG. 5 is an explanatory sectional view showing the movement of the protection pad.

FIG. 6 is an explanatory sectional view showing the movement of the protection pad of another example.

FIG. 7 is an enlarged sectional view showing a main part of a lower electrode.

FIG. 8 is a time chart diagram showing the movement of a pump or the like in the semiconductor manufacturing method.

FIG. 9 is an explanatory diagram showing the principle of a semiconductor manufacturing method.

FIG. 10 is a time chart diagram showing movements of a pump and the like in another semiconductor manufacturing method.

FIG. 11 is a front view of a conventional semiconductor manufacturing apparatus with a partial cross section.

[Explanation of symbols]

A semiconductor manufacturing equipment S processing liquid W semiconductor wafer 1 processing tank 2
Lower electrode 3 Upper electrode 4
Protective pad 5 External container 6
Circulation pump 7 Cathode pin 8
Mounting base 9 Board 10
Guide hole 11 Holding hole 12
Fixing bolt 13 Through hole 14
Through hole 15 Stop pin 16
Connection member 17 Connection bolt 18
Holding bolt 19 Recess 20
Nut 21 Connection terminal 22
Spout hole

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Claims (2)

(57) [Claims] 1. A semiconductor wafer is held with a surface to be processed facing down above a processing tank having an open top, and a current is passed between upper and lower electrodes while jetting a processing liquid onto the surface to be processed of a semiconductor wafer. In a semiconductor manufacturing method in which a wafer is subjected to treatments such as plating and chemical conversion, a circulation port that feeds the treatment liquid into the treatment tank before starting steady operation.
The semi-conduction
The contact between the surface to be processed of the body wafer and the processing liquid is intermittently repeated.
Returned, hydrogen gas etc. adhering to the processed surface of the semiconductor wafer
Removes bubbles and improves the wettability of semiconductor wafers.
And the steady state, the circulation pump is intermittently stopped and the semiconductor
By releasing the contact between the processing surface of the wafer and the processing liquid,
Bubbles such as hydrogen gas that adhere to the surface of the semiconductor wafer to be processed
A method of manufacturing a semiconductor , comprising: a step of removing . 2. A semiconductor wafer is held above a processing tank having an open upper side with its surface to be processed facing down, and a current is passed between the upper and lower electrodes while jetting a processing liquid onto the surface to be processed of the semiconductor wafer. In a semiconductor manufacturing method in which wafers are subjected to treatments such as plating and chemical conversion, a circulation pump that feeds the treatment liquid to the treatment tank is rotated at high speed.
The air inside the piping that connects the processing tank to the circulation pump, etc.
The process of removing the bubbles in the pump and the operation and stop of the circulation pump are alternated before starting the steady operation.
By repeating the above process,
Contact with the physical fluid is repeated intermittently to cover the semiconductor wafer.
Removes bubbles such as hydrogen gas adhering to the treated surface
During the process of improving the wettability of the conductor wafer and during steady operation, the circulation pump is intermittently stopped
By releasing the contact between the processing surface of the wafer and the processing liquid,
Bubbles such as hydrogen gas that adhere to the surface of the semiconductor wafer to be processed
A method of manufacturing a semiconductor , comprising: a step of removing .