JP2011075798A - Display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device which includes a mechanism of efficiently releasing heat accumulated in the device to the outside, in the display device having configuration in which light emitted from an organic EL element exits through a sealing member. <P>SOLUTION: The display device includes: a drive substrate in which a driving circuit is formed; a plurality of organic EL elements which are provided on the drive substrate and emit light at the side opposite to the drive substrate side; and a sealing member which is provided to cover the plurality of organic EL elements and which exhibits optical transparency. The drive circuit includes a conductive thin plate provided generally perpendicular to the thickness direction of the drive substrate. The plurality of organic EL elements are each arranged at a position overlapping the conductive thin plate viewed from one side of the thickness direction of the drive substrate. The sealing member includes thermally conductive linear wires arranged by distributing the same. The thermally conductive wire has a diameter of 0.4 μm or less and higher thermal conductivity than the remainders except the thermally conductive wires among the things constituting the sealing member. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a display device using an organic EL element as a light source of a pixel (hereinafter sometimes referred to as an organic EL display device).

  An organic EL display device is being put into practical use as one of thin display devices (FPD: Flat Panel Display). Currently, research and development for improving the lifetime characteristics and light emission characteristics of the organic EL display devices are being conducted. “EL” is an abbreviation for “Electro Luminescence”.

  When an organic EL display device is used, the organic EL element and the drive circuit generate heat, and the temperature inside the device rises. When the organic EL element is driven at a high temperature, the lifetime of the element is reduced. Therefore, driving at a low temperature is desired. Thus, it has been studied to provide a mechanism for positively dissipating heat generated when using the display device to the outside in the organic EL display device.

  The organic EL display device is usually provided with a sealing member for sealing the organic EL element, and a display device that suppresses the temperature rise of the organic EL element by improving the heat dissipation of the sealing member has been proposed. (For example, refer to Patent Document 1). In the prior art, the sealing member has a multilayer structure, and a layer having high thermal conductivity (hereinafter, also referred to as a heat transfer layer) is provided as one layer of the sealing member to enhance the heat dissipation of the sealing member. ing.

JP-A-2005-31083

  When the display device is used, not only the organic EL element but also a drive circuit for driving the element generates heat. With respect to such heat generation, the heat dissipation effect of the conventional heat transfer layer is not sufficient, and there is a problem that a temperature rise inside the apparatus and a decrease in element lifetime due to this cannot be sufficiently suppressed.

  The conventional heat transfer layer is made of a material having high thermal conductivity such as gold, silver or copper, but these are usually opaque. Therefore, in order to apply a conventional heat transfer layer to a display device in which light emitted from an organic EL element is emitted through a sealing member (so-called top emission type), the layer thickness of the heat transfer layer is extremely thin. (The layer thickness is 10 nm or less), and the heat transfer layer needs to be a translucent layer. However, when the heat transfer layer is made extremely thin, the heat transfer effect is also reduced, and there is a problem that the function as the heat transfer layer cannot be effectively exhibited.

  Accordingly, an object of the present invention is a display device configured to emit light emitted from an organic EL element through a sealing member, and includes a mechanism capable of efficiently dissipating heat accumulated in the device to the outside. It is to provide a display device.

The present invention includes a driving substrate on which a driving circuit is formed,
A plurality of organic EL elements provided on the driving substrate and driven by the driving circuit to emit light to the side opposite to the driving substrate;
A display device comprising: a light-transmissive sealing member provided to cover the plurality of organic EL elements provided on the driving substrate;
The drive circuit includes a conductive thin plate provided substantially perpendicular to the thickness direction of the drive substrate,
The plurality of organic EL elements are respectively disposed at positions overlapping the conductive thin plate when viewed from one of the thickness directions of the driving substrate.
The sealing member includes linear heat conductive wires arranged in a dispersed manner,
The thermal conductive wire has a diameter of 0.4 μm or less, and relates to a display device having a thermal conductivity higher than that of the rest of the components constituting the sealing member except the thermal conductive wire.

The display device further includes a heat radiating member having a heat radiating property higher than that of the conductive thin plate,
The conductive thin plate is disposed on the surface of the driving substrate opposite to the organic EL element side,
The thermal radiation member relates to a display device disposed in contact with the conductive thin plate.

  The present invention also relates to the display device, wherein the thermally conductive wire is at least one of a nanowire made of metal and a carbon nanotube.

  According to the present invention, the organic EL element is disposed between the sealing member and the conductive thin plate.

  Thermally conductive wires are dispersed and arranged on the sealing member. Since the diameter of the heat conductive wire is 0.4 μm or less, visible light can be transmitted. Therefore, it is possible to realize a sealing member that achieves both high light transmittance and high thermal conductivity. Thus, by using a heat conductive wire having a diameter of 0.4 μm or less, a sealing member having high heat conductivity can be provided in the apparatus even for a top emission type organic EL element. Moreover, since the member which has electroconductivity generally has high heat conductivity, the electroconductive thin plate required as a drive circuit can be utilized also as a heat conductive layer. By providing the organic EL element between the sealing member having a high thermal conductivity and the conductive thin plate, heat generated from the organic EL element and the drive circuit can be efficiently radiated to the outside. Thereby, in the display device configured to emit light emitted from the organic EL element through the sealing member, it is possible to suppress an increase in the temperature of the organic EL element and a decrease in the element life resulting therefrom.

It is a top view showing typically a part of display 1 of this embodiment. It is sectional drawing which expands and shows the area | region corresponded to 1 pixel among display apparatuses. It is a figure which shows the circuit structure of a drive circuit.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view schematically showing the display device 1 of the present embodiment. FIG. 2 is an enlarged sectional view showing a region corresponding to one pixel in the display device. FIG. 3 is a diagram showing a circuit configuration of the drive circuit.

  The display device 1 is provided on the drive substrate 21 on which the drive circuit 11 is formed, and is driven by the drive circuit 11 to emit light to the side opposite to the drive substrate 21 side. A plurality of organic EL elements 31 and a light-transmissive sealing member 41 provided to cover the plurality of organic EL elements provided on the driving substrate 21 are provided.

  The drive circuit 11 includes a conductive thin plate 22 provided substantially perpendicular to the thickness direction of the drive substrate 21, and the plurality of organic EL elements 31 are electrically conductive when viewed from one side in the thickness direction of the drive substrate 21. Are disposed at positions overlapping with the conductive thin plate 22, respectively. The sealing member 41 includes linear heat conductive wires arranged in a dispersed manner. The thermal conductive wire has a diameter of 0.4 μm or less, and has a higher thermal conductivity than the rest of the components constituting the sealing member excluding the thermal conductive wire.

  In this specification, “light” means light in a wavelength range emitted from the organic EL element 31, and usually means visible light. Therefore, “predetermined light transmission” of the predetermined member means that at least a part of the light emitted from the organic EL element and incident on the predetermined member is transmitted through the predetermined member.

  When the display device 1 is used, the drive circuit 11 and the organic EL element 31 generate heat. As will be described later, the drive circuit 11 is composed of a plurality of elements such as transistors and capacitors, wiring, and a conductive thin plate 22. When the display device 1 is used, the drive circuit 11 constitutes a part of the drive circuit 11. A plurality of elements such as these generate heat. An element constituting a part of the drive circuit 11 is connected to a conductive thin plate 22 provided as a part of the drive circuit via a predetermined wiring or the like, and the organic EL element 31 is a part of the drive circuit 11. Therefore, the heat generated in the drive circuit 11 and the organic EL element 31 is efficiently conducted to the conductive thin plate 22. Since the conductive thin plate 22 has more conductive electrons responsible for heat conduction than a semiconductor or an insulator, the conductive thin plate 22 generally has high thermal conductivity. Therefore, the heat generated in the drive circuit 11 and the organic EL element 31 is conducted to the conductive thin plate 22, further diffused in the conductive thin plate 22, and efficiently radiated to the outside.

  Furthermore, since the sealing member 41 includes a heat conductive wire, the heat conductivity is higher than that of a normal sealing member that does not include a heat conductive wire. By providing such a sealing member 41, the heat generated in the drive circuit 11 and the organic EL element 31 is conducted not only to the driving substrate 21 but also to the sealing member 41 and is radiated to the outside. Become. Thereby, the temperature rise of the drive circuit 11 and the organic EL element 31 can be suppressed.

  Since the plurality of organic EL elements 31 are respectively arranged at positions overlapping the conductive thin plate 22 when viewed from one side in the thickness direction of the driving substrate 21, the conductive thin plate 22 and the sealing member 41 having high thermal conductivity. It will be provided between. Furthermore, the drive circuit 11 can also be provided between the conductive thin plate 22 and the sealing member 41 constituting a part thereof. As described above, since the members (conductive thin plate 22 and sealing member 41) having high thermal conductivity are arranged so as to sandwich the driving circuit 11 and the organic EL element 31 that generate heat, heat can be efficiently radiated to the outside. In addition, the temperature rise of the drive circuit 11 and the organic EL element 31 can be efficiently suppressed.

(1) Configuration of Display Device First, the configuration of the display device 1 will be described.

(Organic EL device)
The organic EL element 31 is provided on the driving substrate 21 and is driven by the driving circuit 11 to emit light toward the side opposite to the driving substrate 21 side (that is, the sealing member 41 side). In other words, a plurality of top emission type organic EL elements 31 are provided on the driving substrate 21. In the present embodiment, a plurality of organic EL elements 31 are provided in a matrix on the driving substrate 21. Specifically, the plurality of organic EL elements 31 are discretely arranged on the driving substrate 21 at equal intervals in the row direction X and at equal intervals in the column direction Y. FIG. 1 shows a configuration in which 30 organic EL elements 31 are provided on the driving substrate 21 in an arrangement of 6 rows and 5 columns, but the number and arrangement of the organic EL elements 31 are appropriately determined according to the design. Is set. Hereinafter, in the present specification, one of the driving substrate 21 in the thickness direction may be described as “upper” or “upper”, and the other in the thickness direction may be described as “lower” or “lower”.

  On the driving substrate 21, partition walls 51 arranged in a lattice shape are further provided. This partition wall 51 has a plurality of partition wall members extending in the row direction X and a plurality of partition wall members extending in the column direction Y, and these stripe-shaped partition wall members are arranged orthogonally to form a lattice. Make up shape. The partition wall 51 is provided to separate the organic EL elements 31. Each organic EL element 31 is provided in a rectangular region surrounded by a lattice-shaped partition wall 51. In other words, the partition walls 51 are disposed between the organic EL elements 31 adjacent in the row direction X and the column direction Y, respectively. Note that the partition wall 51 may be a stripe shape instead of the lattice shape, and the partition wall 51 may not be provided if it is not necessary when considering the manufacturing process.

  The organic EL element 31 includes a pair of electrodes 32 and 33 and one or more predetermined layers 34 disposed between the electrodes. Hereinafter, one of the pair of electrodes 32 and 33 may be referred to as “first electrode 32” and the other electrode may be referred to as “second electrode 33”. The organic EL element 31 is provided in a region surrounded by the partition wall 51, and is configured by laminating the first electrode 32, the predetermined layer 34, and the second electrode 33 on the driving substrate 21 in this order. One of the first and second electrodes 32 and 33 is provided as an anode, and the other is provided as a cathode. The organic EL element 31 includes at least one light emitting layer as one or a plurality of predetermined layers 34.

  One first electrode 32 is provided for one organic EL element 31. That is, the same number of first electrodes 32 as the organic EL elements 31 are formed on the driving substrate 21. The plurality of first electrodes 32 are provided in a matrix on the driving substrate 21. Specifically, the first electrodes 32 are discretely arranged on the driving substrate 21 at equal intervals in the row direction X and at equal intervals in the column direction Y. The first electrode 32 has a flat plate shape, and is formed in a substantially rectangular shape when viewed from one side in the thickness direction of the driving substrate 21 (hereinafter also referred to as “in plan view”). The first electrode 32 is provided in a substantially rectangular region surrounded by the partition wall 51 in plan view, and the peripheral edge thereof overlaps a part of the partition wall 51. Since the organic EL element 31 emits light through the second electrode 33, the first electrode 32 is preferably constituted by a reflective electrode that reflects the light toward the second electrode 33.

  The organic EL element 31 includes at least one light emitting layer as one or a plurality of predetermined layers 34. The predetermined layer 34 is disposed in a region surrounded by the partition walls 51 and is formed in a region overlapping the first electrode 32 in plan view.

  The second electrode 33 is formed so as to cover the predetermined layer 34. In the present embodiment, the second electrode 33 is provided as a common electrode continuous across the plurality of organic EL elements 31. Specifically, the second electrode 33 is formed not only on the predetermined layer 34 but also on the predetermined layer 34 from the predetermined layer 34 to the predetermined layer 34 of the adjacent organic EL element 31 along the surface of the partition wall 51. The Since the organic EL element 31 emits light through the second electrode 33, the second electrode 33 is configured by an electrode exhibiting light transmittance.

(Drive substrate)
The drive substrate 21 on which the organic EL element 31 is mounted includes a drive circuit 11 that drives the organic EL element 31.

  The drive circuit 11 of the present embodiment includes a plurality of circuit elements that individually drive the organic EL elements 31 and predetermined wirings that connect the circuit elements. As shown in FIGS. 2 and 3, each circuit element provided for each organic EL element 31 includes two transistor elements, one capacitor 14, and a predetermined wiring. Hereinafter, one of the two transistor elements is referred to as a switching Tr12, and the other element is referred to as a driving Tr13. Further, the drive substrate 21 includes a conductive thin plate 22 provided as a part of the drive circuit 11 and substantially perpendicular to the thickness direction of the drive substrate 21.

  The conductive thin plate 22 in the present embodiment is connected to a drive power source that supplies a drive voltage (indicated by the symbol “Vcc” in FIG. 3). The driving voltage supplied from the driving voltage is supplied as a common voltage (Vcc) to each circuit element via the conductive thin plate 22. The conductive thin plate 22 has a flat plate shape and is arranged so that the normal direction of the pair of main surfaces substantially coincides with the thickness direction of the driving substrate 21. In the present embodiment, the conductive thin plate 22 is disposed on the surface of the driving substrate 21 opposite to the organic EL element 31 side. The thickness of the conductive thin plate 22 is set to such a thickness that the heat can be efficiently diffused and the electric resistance is low and the voltage drop can be suppressed. When a conductive thin plate is provided only for the purpose of supplying a common voltage to each circuit element, the conductive thin plate may be a linear wiring arranged in a lattice shape, similar to the main wiring described later. However, by providing a flat conductive thin plate as in this embodiment, the electrical resistance can be further reduced as compared with a linear wiring. As a result, power consumption can be suppressed. Furthermore, it is preferable that the conductive thin plate 22 is formed so that the entire outer periphery protrudes from the region where the plurality of organic EL elements 31 are provided in a plan view. Thus, since the conductive thin plate 22 has a region that protrudes from the region where the plurality of organic EL elements 31 are provided, current can be supplied to each circuit element through the protruding region. As a result, voltage drop can be further suppressed, and variations in voltage applied to each circuit element can be suppressed.

  Three layers of electrically insulating layers 23, 24, and 25 are stacked on the conductive thin plate 22. That is, the first insulating layer 23, the second insulating layer 24, and the planarizing film 25 are laminated on the conductive thin plate 22 in this order. The drive circuit 11 includes a conductive thin plate 22, three electrical insulating layers 23, 24, and 25, contact wirings 20a to 20d formed in the three electrical insulating layers 23, 24, and 25, and three electrical layers. The conductive thin film formed between the insulating layers 23, 24, and 25, the semiconductor layers 18 and 19, and the like.

  Each of the switching Tr12 and the driving Tr13 includes three electrodes. Specifically, gate electrodes SG and DG, source electrodes SS and DS, and drain electrodes SD and DD are provided. Each of these three electrodes, Tr12 for switching and Tr13 for driving, is constituted by a conductive thin film formed between three electrically insulating layers. The switching Tr12 and the driving Tr13 are respectively provided between the semiconductor layers 18 and 19 provided between the source electrodes SS and DS and the drain electrodes SD and DD, and between the semiconductor layers 18 and 19 and the gate electrodes SG and DG. A gate insulating film 17 (a part of the second insulating layer 24) is further provided.

  The gate electrodes SG and DG are provided on the first insulating layer 23. On the first insulating layer 23, a predetermined wiring and the like are further provided in addition to the gate electrodes SG and DG. The gate electrodes SG and DG and the predetermined wiring are integrally formed. On the first insulating layer 23, a second insulating layer 24 is provided to cover the gate electrodes SG and DG and predetermined wiring. A portion of the second insulating layer 24 provided on the gate electrodes SG and DG functions as the gate insulating film 17 of the switching Tr12 and the driving Tr13. The source electrodes SS and DS and the drain electrodes SD and DD are provided on the gate electrodes SG and DG with the gate insulating film 17 interposed therebetween. The source electrodes SS and DS and the drain electrodes SD and DD are arranged on the gate insulating film 17 at a predetermined interval. Semiconductor layers 18 and 19 are provided between the source electrodes SS and DS and the drain electrodes SD and DD. Thus, in this embodiment, the bottom gate type switching Tr 12 and the driving Tr 13 are formed on the driving substrate 21. As another embodiment, a top gate transistor element may be formed on a driving substrate.

  The capacitor 14 includes a pair of opposed flat plates 15 and 16 and a first insulating layer 23 interposed between the pair of flat plates 15 and 16. One flat plate 15 of the pair of flat plates is formed on the first insulating layer 23. The one flat plate 15 is composed of a conductive thin film extending from the gate electrode DG of the driving Tr 13 toward the switching Tr 12. The other flat plate 16 constituting the capacitor 14 is constituted by a part of the conductive thin plate 22. That is, a portion of the conductive thin plate 22 that faces the one flat plate 15 with the first insulating layer 23 interposed functions as the other flat plate 16.

  A planarizing film 25 that covers these elements is further formed on the driving circuit 11 including the driving Tr 13, the switching Tr 12, and the capacitor 14. The plurality of organic EL elements 31 are provided on the planarizing film 25.

  Contact wirings 20 a to 20 d are provided in the first insulating layer 23, the second insulating layer 24, and the planarizing film 25. The contact wirings 20a to 20d are made of a conductor formed in a contact hole penetrating each electrical insulating layer 23, 24, 25 in the thickness direction. For example, a contact wiring 20 a penetrating the second insulating layer 24 is provided between one flat plate 15 constituting the capacitor 14 and the drain electrode SD of the switching Tr 12. Further, contact wirings 20b and 20c formed in communication with the first and second insulating layers 23 and 24 are provided between the conductive thin plate 22 and the source electrode DS of the driving Tr13. Further, a contact wiring 20 d that penetrates the planarizing film 25 is provided between the drain electrode DD of the driving Tr 13 and the first electrode 32 of the organic EL element 31. The contact wirings 20a to 20d electrically connect predetermined conductive thin plates facing each other with the electrical insulating layers 23, 24, and 25 interposed therebetween.

  Thus, the conductive thin plate 22 is electrically connected to the source electrode DS of the driving Tr 13 via the contact wirings 20 b and 20 c, and the gate electrode DG of the driving Tr 13 is one flat plate 15 constituting the capacitor 14. In addition, the drain electrode SD of the switching Tr 12 is electrically connected to the first electrode 32 of the organic EL element 31 via the contact wiring 20d. Connected.

  The drive circuit 11 generates heat mainly by the drive Tr 13, and contact wirings 20 b and 20 c that extend the source electrode DS of the drive Tr 13 and the conductive thin plate 22 that diffuses heat in the thickness direction of the drive substrate 21. Therefore, the heat generated in the drive circuit 11 can be efficiently conducted to the conductive thin plate 22. Thereby, the temperature rise of the drive circuit 11 can be efficiently suppressed. Note that the larger the cross-sectional area of the contact wiring, the more efficiently heat can be conducted and the heat dissipation effect can be enhanced. Therefore, it is preferable to provide a contact wiring having a wide cross-sectional area from the viewpoint of the heat dissipation effect.

  Hereinafter, the operation of the display device 1 will be described with reference to FIG. A scanning signal (indicated by symbol “Vscan” in FIG. 3) and a data signal (indicated by symbol “Vsig” in FIG. 3) are input to the driving substrate 21 from a signal generation unit provided in the display device 1. The These scanning signals and data signals are input to circuit elements that drive the individual organic EL elements 31. In the present embodiment, main wirings m1 and m2 for transmitting a scanning signal and a data signal, respectively, and subwirings s1 and s2 branched from the main wirings m1 and m2, respectively, are provided as the predetermined wiring.

  The main wirings m1 and m2 are usually arranged between the conductive thin plate 22 and the partition wall 51. For example, the main wiring m1 for transmitting the scanning signal is composed of a plurality of conductive thin films extending in the row direction X, and is arranged at a position overlapping the plurality of partition walls 51 extending in the row direction X in plan view. Since the main wiring m1 for transmitting the scanning signal is connected to the gate electrode SG of the switching Tr12 via the sub wiring s1, it is on the same layer as the layer on which the gate electrode SG is formed (that is, on the first insulating layer 23). ). The main wiring m2 for transmitting a data signal is composed of a plurality of conductive thin films extending in the column direction Y, and is arranged at a position overlapping the plurality of partition walls 51 extending in the column direction Y in plan view. Since the main wiring m2 for transmitting the data signal is connected to the source electrode SS of the switching Tr 12 via the sub wiring s2, it is on the same layer as the layer on which the source electrode SS is formed (that is, on the second insulating layer 24). ). Since the main wiring m1 for transmitting the scanning signal is formed on the first insulating layer 23 and the main wiring m2 for transmitting the data signal is formed on the second insulating layer 24, the main wirings m1 and m2 are mutually connected. Although they do not intersect on the same plane, they are arranged in a lattice pattern as in the case of the partition wall 51 in plan view.

  The sub-wiring s1 branched from the main wiring m1 that transmits the scanning signal is connected to the gate electrode SG of the switching Tr12, and is integrally formed on the gate electrode SG of the switching Tr12 on the first insulating layer 23. The sub-wiring s2 branched from the main wiring m2 that transmits the data signal is connected to the source electrode SS of the switching Tr12 and is formed integrally with the source electrode SS of the switching Tr12 on the second insulating layer 24.

  The drain electrode SD of the switching Tr12 and the gate electrode DG of the driving Tr13 are connected by a predetermined wiring. A capacitor 14 is inserted between the gate electrode DG of the driving Tr 13 and the conductive thin plate 22. The drain electrode DD of the driving Tr 13 and the first electrode 32 of the organic EL element 31 are connected by the contact wiring 20. The source electrode DS of the driving Tr 13 is connected to the conductive thin plate 22 and is applied with a driving voltage (indicated by the symbol “Vcc” in FIG. 3) from a driving power source.

  When a high voltage is applied as a scanning signal to the gate electrode SG of the switching Tr 12 via the main wiring m1 and the sub wiring s1, the drain electrode SD and the source electrode SS may be in a conductive state (hereinafter referred to as an on state). .)become. When a high voltage is applied as a data signal to the source electrode SS of the switching Tr12 via the main wiring m2 and the subwiring s1 when the switching Tr12 is on, the high voltage data signal is applied to the gate of the driving Tr13. Given to the electrode DG, the drain electrode DD and the source electrode DS of the driving Tr 13 become conductive (ON state). When the driving Tr 13 is turned on, a driving voltage (Vcc) is applied to the first electrode 32 of the organic EL element 31, and the organic EL element 31 emits light. That is, the driving Tr 13 is turned on in a state where both the scanning signal and the data signal are input, and the organic EL element 31 emits light.

  The driving Tr 13 performs an operation according to the potential difference of the capacitor 14. Since the capacitor 14 stores electric charge according to the potential difference between the voltage applied as the data signal and the drive voltage (Vcc) when the switching Tr12 is in the on state, the switching Tr12 is once in the off state. The driving Tr 13 performs an operation according to the electric charge accumulated in the capacitor 14 until the data signal is input in a state where the switching Tr 12 is in the ON state. In this way, by selectively inputting the scanning signal and the data signal, the organic EL element 31 can selectively emit light.

  In the display device 1 of the present embodiment, a plurality of organic EL elements 31 are arranged in a matrix, and a circuit element shown in FIG. 3 is provided for each organic EL element 31. The gate electrodes SG of the circuit element switching Tr12 provided in the organic EL elements 31 of each row are connected to each other by a main wiring m1 that transmits a scanning signal. The source electrodes SS of the circuit element switching Tr 12 provided in the organic EL elements 31 in each column are connected to each other by a main wiring m2 that transmits a data signal. Therefore, a common scanning signal is input to the gate electrode SG of the switching Tr 12 arranged in the same row. A common data signal is input to the source electrode SS of the switching Tr 12 arranged in the same column. In such an active matrix display device 1, a plurality of organic EL elements 31 arranged in a specific row can be selected by inputting a scanning signal. By further inputting a data signal from the plurality of organic EL elements 31 selected in this way, the organic EL elements 31 arranged in a specific column can be selectively made to emit light.

(Thermal radiation member)
The display device 1 preferably further includes a heat radiating member 45 having a heat radiating property higher than that of the conductive thin plate 22. The heat radiating member 45 is disposed in contact with the conductive thin plate 22.

  The heat radiation member 45 is preferably formed over the entire surface of the conductive thin plate 22. Thermal radiation means a phenomenon in which thermal energy is radiated as electromagnetic waves from an object. The thermal emissivity of the thermal radiation member 45 is preferably 0.70 or more, and more preferably 0.85 or more. The thermal emissivity of the heat radiating member 45 is obtained by dividing the amount of energy radiated from the surface of the heat radiating member 45 at a predetermined temperature by the amount of energy radiated from a black body having the same temperature as the heat radiating member 45. Value. Thermal emissivity can be measured using Fourier transform infrared spectroscopy (FT-IR).

  By providing such a heat radiating member 45, the heat transmitted to the conductive thin plate 22 and diffused in the conductive thin plate 22 can be actively dissipated to the outside. Thereby, the heat generated in the drive circuit 11 and the organic EL element 31 can be radiated to the outside, and the temperature rise of the drive circuit 11 and the organic EL element 31 can be suppressed.

  The thermal radiation member 45 preferably has high thermal conductivity in addition to thermal radiation. The thermal conductivity of the thermal radiation member 45 is preferably 1 W / (m · K) or more, more preferably 10 W / (m · K) or more, and further preferably 200 W / (m · K). The thermal conductivity can be measured, for example, by the method described in ASTM D5470 (American Society For Testing and Materials D5470).

  Since the heat radiating member 45 has high heat conductivity in addition to high heat radiating property, the heat conducted from the conductive thin plate 22 can be diffused inside the heat radiating member 45, and the temperature distribution in the conductive thin plate 22. Further homogenization can be promoted. Thus, the heat conducted from the conductive thin plate 22 is diffused by the heat radiating member 45 and radiated to the outside, so that the heat generated in the drive circuit 11 and the organic EL element 31 can be efficiently radiated. . As a result, the temperature rise of the drive circuit 11 and the organic EL element 31 can be suppressed, and the life of the drive circuit 11 and the organic EL element 31 can be extended.

  The thermal radiation member 45 may be composed of only one layer, or may be composed of two or more layers laminated. For example, the heat radiating member 45 composed of only one layer can be configured by mixing a material having a high thermal conductivity and a material having a high heat radiating property with a base material such as a resin. Further, for example, the heat radiating member 45 formed by laminating two or more layers by a laminated body in which one layer or a plurality of layers each having a high thermal conductivity and a layer having a high thermal radiation property are laminated can be formed.

Examples of the material having high heat radiation include black materials, and a pigment component of black paint is preferably used. As a material of the thermal radiation member 45, a mixed material (carbon plastic) of a carbon material and a plastic material, TiO ₂ doped with a predetermined metal element, colloid in which titania and predetermined metal fine particles are dispersed, Fe ₃ O _{4 and the} like Is mentioned. Examples of the material having high thermal conductivity include aluminum, copper, silver, a ceramic material, and a resin having high thermal conductivity. Examples of the resin having high thermal conductivity include an epoxy resin, a melamine resin, and an acrylic resin.

(Sealing member)
The sealing member 41 is provided for hermetically sealing the organic EL element 31, covers the second electrode 33, and is disposed in contact with the second electrode 33. Since the light emitted from the organic EL element 31 is emitted to the outside through the sealing member 41, the sealing member 41 is configured by a member that exhibits light transmittance.

  The sealing member 41 includes linear heat conductive wires arranged in a dispersed manner. This thermally conductive wire has a diameter of 0.4 μm or less, and has a thermal conductivity higher than that of the rest of the components constituting the sealing member except for the thermally conductive wire. The sealing member 41 is provided with an infinite number of thermally conductive wires. The diameter of the thermally conductive wire means an average value of the diameters of all the thermally conductive wires provided in the sealing member 41. The diameter of the heat conductive wire can be calculated based on the diameter of a predetermined number of wires measured using, for example, an electron microscope. The thermal conductivity of the sealing member can be measured by a steady heat flow meter method (ASTM E 1530).

  Since the maximum value (0.4 μm) of the diameter of the thermally conductive wire provided in the sealing member 41 is about the minimum value of the wavelength of visible light, even if a thermally conductive wire is added, the light transmittance of the sealing member 41 is improved. It can maintain, and the fall of the light transmittance of the sealing member 41 by adding a heat conductive wire can be suppressed.

  Moreover, a heat conductive wire has a heat conductivity higher than the remainder except the said heat conductive wire in what comprises the sealing member. That is, when the sealing member is formed of a material excluding the heat conductive wire, the heat conductivity of the heat conductive wire is higher than the heat conductivity of the sealing member without the heat conductive wire.

  When the top emission type organic EL element is provided on the driving substrate 21, it is necessary to provide a sealing member exhibiting light transmittance. Resins and glass that are commonly used as a light-transmitting sealing member usually have a low thermal conductivity. Therefore, when a conventional sealing member is used, the heat generated in the organic EL element or the drive circuit is sealed. It was difficult to diffuse the stop member, and heat generated inside the device was not efficiently released to the outside through the sealing member. Compared to such a conventional sealing member, while maintaining high light transmittance by dispersing and arranging heat conductive wires having high heat conductivity without hindering light transmission on the sealing member. The sealing member 41 that conducts heat efficiently can be realized. This realizes the sealing member 41 that efficiently diffuses the heat generated in the drive circuit 11 and the light emitting element 31 even in the display device in which the top emission type organic EL element is mounted on the drive substrate 21. be able to.

  The thermally conductive wire is preferably at least one of a nanowire made of metal and a carbon nanotube.

  The sealing member 41 may have a single layer structure or a multilayer structure. For example, using a resin having excellent moldability, the first sealing member 42 is formed along the surface of the second electrode 33, and glass or the like having a high gas barrier property is further formed on the first sealing member 42. Alternatively, the second sealing member 43 may be formed.

  Only the second sealing member 43 may be provided without providing the first sealing member 42, but in this case, the portion corresponding to the first sealing member 42 is filled with air, nitrogen, or the like. Become. Since air, nitrogen, and the like have low thermal conductivity, it is preferable to provide the first sealing member 42 in order to diffuse the heat generated in the organic EL element 31.

  Further, if a predetermined gas barrier property can be ensured only by the first sealing member 42, the first sealing member 42 may be provided as the sealing member 41 without providing the second sealing member 43. Good.

  The first sealing member 42 is made of, for example, a resin and a heat conductive wire that is dispersed in the resin. The second sealing member 43 is made of, for example, glass and a thermally conductive wire that is dispersed in the glass.

  The thermally conductive wire is linear. As the linear heat conductive wire, a needle-like or curved wire can be used, and a hollow and tubular wire may be used.

  It is preferable that the heat conductive wire forms a network structure in a base material such as glass and resin. As described above, since the heat conductive wire forms a network structure in the base material, heat can be sequentially conducted to the adjacent heat conductive wires, thereby realizing a sealing member having high heat conductivity. Can do.

  The diameter of the heat conductive wire is 0.4 μm or less, preferably 0.35 μm or less, and more preferably 0.3 μm or less. Further, if the diameter of the heat conductive wire is too small, a heat diffusing effect cannot be obtained.

  The length of the heat conductive wire is preferably 0.5 μm or more, more preferably 1 μm or more. The aspect ratio (length / diameter) of the heat conductive wires dispersed and arranged in the first sealing member 42 and the second sealing member 43 is preferably 10 or more, and more preferably 30 or more. A higher aspect ratio is preferable because the heat conductive wires are connected to each other to form a network and the effect of improving the heat conductivity is enhanced. Conversely, if the aspect ratio is too small, sufficient heat conductivity may not be obtained.

  Single-wall carbon nanotubes (SWCNT) have a very high thermal conductivity, estimated at 1750-5800 W / mK. In addition, measured values of the thermal conductivity of bulk SWCN include those with a room temperature of 200 W / mK or more in the orientation direction {Applied Physics letters 77, 666 (2000)}.

  The mixing ratio of the heat conductive wire in the sealing member 41 is appropriately set in consideration of the heat conductivity and the light transmittance, since the light conductivity decreases as the heat conductivity increases as the ratio increases. The proportion of the thermally conductive wire contained in the sealing member is preferably about 0.1% to 50% by weight fraction. This is because if the weight fraction is too low, the intended high thermal conductivity may not be obtained, and if the weight fraction is too high, the light transmittance may be lowered.

  If the orientation of the heat conductive wires dispersed and arranged in the first sealing member 42 and the second sealing member 43 is random, an effect of improving the heat conductivity can be obtained, but the heat conduction in the thickness direction of the sealing member can be obtained. Since the heat conduction in the thickness direction of the sealing member is improved, the effect of improving the heat conductivity in the thickness direction of the sealing member is further enhanced.

(2) Method for Manufacturing Display Device Next, a method for manufacturing the display device 1 will be described.

(Drive substrate)
First, the conductive thin plate 22 is prepared. In order to suppress the voltage drop generated in the conductive thin plate 22 and to form the conductive thin plate 22 having high thermal diffusivity, the conductive thin plate 22 is preferably formed of a member having low electrical resistance and high thermal conductivity. . Such a conductive thin plate 22 is made of, for example, a metal, a metal oxide, and a metal alloy, and examples of the material include Cr, Au, Pt, Pd, Mo, Ag, Cu, Al, Ti, Ni, Ir, Examples thereof include metals such as Fe and W, alloys thereof, and metal oxides such as MoO ₃ and ITO (indium tin oxide). Further, the conductive thin plate 22 may be constituted by a laminated body in which layers made of different materials are laminated. For example, the conductive thin plate 22 may be composed of a laminate of Mo / Al / Mo or Ta / Cu / Ta. (Here, the symbol “/” indicates that the layers sandwiching the symbol “/” are adjacently laminated. The same applies hereinafter.) The thickness of the conductive thin plate 22 is usually 5 μm or more, and is 10 μm to 500 μm. The degree is preferred.

Next, the first insulating layer 23 is formed on the conductive thin plate 22. The thickness of the 1st insulating layer 23 should just be the thickness which can ensure the electrical insulation of the thickness direction, and is about 500 nm-about 2 micrometers normally. The first insulating layer 23 is made of SiO _X such as SiN ₂ (the symbol “x” represents a real number of 1 to 2), spin-on-glass (SOG), photoresist, polyimide, and the like by spin coating, sputtering, and CVD. It is formed by forming a film by, for example. Next, a contact hole is formed in a portion corresponding to the contact wiring 20b formed in the first insulating layer 23. The contact hole can be formed by a photolithography method. Further, the contact wiring 20b is formed by filling the contact hole with a conductive material.

  Next, predetermined wirings such as the gate electrodes SG and DG, one flat plate 15 of the capacitor 14, and the main wiring m <b> 1 and the sub wiring s <b> 1 are formed on the first insulating layer 23. These are formed by, for example, a photolithography method. For example, a conductive thin film made of a metal, an alloy, or the like is formed on the first insulating layer 23 by, for example, a vacuum deposition method, a sputtering method, or a coating method, and a photoresist is coated on the conductive thin film. By exposing and developing the part, a mask is patterned on the conductive thin film, and then etching is performed to remove the mask, thereby patterning the gate electrodes SG and DG. Note that the above-described contact wiring 20b may be formed at the same time when patterning the gate electrodes SG, DG, and the like. Alternatively, the gate electrodes SG, DG and the like may be formed without patterning the conductive thin plate by selectively forming the conductive thin plate only at a predetermined portion. For example, the gate electrodes SG, DG and the like can be formed by patterning a conductive thin plate by a predetermined printing method such as an inkjet printing method and a flexographic printing method.

  The gate electrodes SG and DG, the contact wiring 20b, and the like are formed of, for example, a material exemplified as a material constituting the conductive thin plate 22. The film thickness of the gate electrodes SG, DG, etc. is about 30 nm to 500 nm. Note that the conductive thin film constituting the source electrode and the predetermined wiring formed on the second insulating layer 24 to be described later is formed in the same manner using the same material as the gate electrodes SG and DG, for example.

  Next, a second insulating layer 24 is formed on the first insulating layer 23 so as to cover the gate electrodes SG, DG and the like. The second insulating layer 24 can be formed, for example, by a coating method using a photosensitive resin. The second insulating layer 24 functions as the gate insulating film 17 of the switching Tr 12 and the driving Tr 13. In order to ensure the driving capability of each transistor, the insulating layer 24 is preferably formed so as to have a dielectric constant of 1.5 or more and a film thickness of 500 nm or less. Next, contact holes are formed at portions corresponding to the contact wirings 20 a and 20 c formed in the second insulating layer 24. The contact hole can be formed by a photolithography method. Further, the contact wirings 20a and 20c are formed by filling the contact holes with a conductive material.

  Next, the source electrodes SS and DS, the drain electrodes SD and DD, and predetermined wirings such as the main wiring m2 and the sub wiring s2 are formed on the second insulating layer 24. These can be formed in the same manner as the gate electrodes SG and DG. Further, when forming the source electrodes SS, DS, etc., the contact wirings 20a, 20c may be formed simultaneously.

  Next, semiconductor layers 18 and 19 are formed between the source electrodes SS and DS and the drain electrodes SD and DD, respectively. The semiconductor layers 18 and 19 are made of an inorganic oxide semiconductor such as ZTO, an organic semiconductor having a precursor such as pentacene and tetrabenzoporphyrin, and an inorganic semiconductor such as amorphous silicon and polysilicon. , And a CVD method or the like. Note that the semiconductor layers 18 and 19 may be patterned by selectively forming an inorganic oxide semiconductor, an organic semiconductor, an inorganic semiconductor, or the like at a predetermined portion, and the inorganic oxide semiconductor, the organic semiconductor, and the inorganic semiconductor. Alternatively, the semiconductor layers 18 and 19 may be patterned by forming a thin film made of or the like on one surface and then patterning using a photolithography method.

  Next, a planarizing film 25 is formed on the second insulating layer 24 so as to cover the driving Tr 13, the switching Tr 12 and predetermined wirings. The planarization film 25 is provided to planarize the surface of the driving substrate 21. The planarizing film 25 is formed using, for example, a photosensitive resin. The thickness is about 2 μm to 10 μm. Next, the contact wiring 20 is formed on the planarizing film 25 in the same manner as the contact wiring formation described above.

  A protective film for protecting the semiconductor layers 18 and 19 may be formed between the semiconductor layers 18 and 19 and the planarizing film 25. This protective film is preferably one that does not affect the operating characteristics of the driving Tr 13 and the switching Tr 12.

  The driving substrate 21 is formed by the above steps. Note that although a transistor having a bottom gate structure is described in this embodiment, a driver circuit may be formed using a transistor having a top gate structure.

(Thermal radiation member)
The heat radiating member can take various forms such as a single layer structure or a multilayer structure.

  For example, a material having high thermal radiation, such as a black pigment, is mixed with a resin material, the mixed material is applied and formed into a film, and further solidified to form a one-layer thermal radiation member. Also, for example, in addition to a material exhibiting high thermal radiation, fine particles exhibiting high thermal conductivity are mixed with a resin material, and this mixed material is applied to form a film, and further solidified, thereby adding high thermal radiation. A heat-radiating member having a one-layer structure having thermal conductivity can be formed.

  The heat radiating member constituted by laminating a plurality of layers is constituted, for example, by a laminated body in which a layer showing high thermal conductivity and a layer showing high heat radiating properties are laminated. For example, a high thermal conductivity layer made of a material exhibiting high thermal conductivity is formed, and a coating containing a black pigment exhibiting high thermal radiation is applied to one or both sides of the high thermal conductivity layer to exhibit high thermal radiation. The layer can be formed on one surface or both surfaces of the high thermal conductivity layer, and a heat radiating member composed of a laminate of a layer exhibiting high thermal conductivity and a layer exhibiting high thermal radiation can be formed. As such a heat radiating member, specifically, a sheet made of aluminum with a black coating (manufactured by Kobe Steel, trade name: Kobebenets Aluminum (KS750), thermal conductivity 230 W / mK, thermal emissivity 0 .86).

  The above heat radiating member may be directly formed on the conductive thin plate 22, or a heat radiating member is previously formed on a predetermined base material, and this is formed on the conductive thin plate 22 using a predetermined bonding material. You may stick together.

  For example, by applying a black paint exhibiting high thermal radiation to one main surface of an aluminum sheet exhibiting high thermal conductivity, a laminate of a layer exhibiting high thermal conductivity and a layer exhibiting high thermal radiation is produced. And this laminated body should just be bonded to the electroconductive thin plate 22 using a predetermined bonding material. Alternatively, for example, a layer showing high thermal conductivity may be formed by vapor-depositing aluminum on the conductive thin plate 22, and a layer showing high thermal radiation may be formed by applying a black paint on the surface of the layer made of aluminum. Good.

  As the bonding material, a material having high thermal conductivity such as an acrylic adhesive or an epoxy adhesive is preferably used. Further, the heat radiating member may be bonded to the conductive thin plate 22 by fusing without using a bonding material.

(Organic EL device)
Next, the organic EL element 31 is formed on the driving substrate 21. The organic EL element 31 can be formed by sequentially laminating each component on the driving substrate 21. As described above, the organic EL element 31 includes a pair of electrodes including an anode and a cathode, and one or more predetermined layers 34 provided between the electrodes.

  Examples of the predetermined layer 34 provided between the anode and the cathode include a light emitting layer, an electron injection layer, an electron transport layer, a hole block layer, a hole injection layer, a hole transport layer, and an electron block layer.

An example of a layer structure that can be adopted by the organic EL element is shown below.
a) anode / light emitting layer / cathode b) anode / hole injection layer / light emitting layer / cathode c) anode / hole injection layer / light emitting layer / electron injection layer / cathode d) anode / hole injection layer / light emitting layer / Electron transport layer / cathode e) anode / hole injection layer / light emitting layer / electron transport layer / electron injection layer / cathode f) anode / hole transport layer / light emitting layer / cathode g) anode / hole transport layer / light emitting layer / Electron injection layer / cathode h) anode / hole transport layer / light emitting layer / electron transport layer / cathode i) anode / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode j) anode / hole Injection layer / hole transport layer / light emitting layer / cathode k) anode / hole injection layer / hole transport layer / light emitting layer / electron injection layer / cathode l) anode / hole injection layer / hole transport layer / light emitting layer / Electron transport layer / cathode m) anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode n) anode / light emitting layer / electron injection layer / cathode o) anode / Light layer / electron transport layer / cathode p) anode / light emitting layer / electron transport layer / electron injection layer / cathode The organic EL element of this embodiment may have two or more light emitting layers. In any one of the layer configurations of a) to p) above, when the laminate sandwiched between the anode and the cathode is referred to as “structural unit A”, the configuration of the organic EL element having two light emitting layers is obtained. Examples of the layer structure shown in the following q) can be given. Note that the two (structural unit A) layer structures may be the same or different.
q) Anode / (structural unit A) / charge generating layer / (structural unit A) / cathode If “(structural unit A) / charge generating layer” is “structural unit B”, it has three or more light emitting layers. Examples of the structure of the organic EL element include the layer structure shown in the following r).
r) anode / (structural unit B) x / (structural unit A) / cathode The symbol “x” represents an integer of 2 or more, and (structural unit B) x is a stack in which “structural unit B” is stacked in x stages. Represents the body. A plurality of (structural units B) may have the same or different layer structure.

  Here, the charge generation layer is a layer that generates holes and electrons by applying an electric field. Examples of the charge generation layer include a thin film made of vanadium oxide, indium tin oxide (abbreviated as ITO), molybdenum oxide, or the like.

  In the organic EL element in which the first electrode 32 is used as an anode and the second electrode 33 is used as a cathode, each layer is laminated on the driving substrate 21 in order from the left layer in the configurations a) to q). Conversely, in the organic EL element in which the first electrode 32 is the cathode and the second electrode 33 is the anode, the layers are stacked on the driving substrate 21 in order from the right layer in the configurations a) to q). .

<First electrode>
Since the organic EL element 31 of the present embodiment emits light toward the sealing member 41, the first electrode 32 may be an opaque electrode, and is configured by a reflective electrode that reflects light toward the second electrode 33. It is preferable. The first electrode 32 is composed of a thin film such as a metal oxide, a metal sulfide, and a metal. For example, when the first electrode 32 is provided as an anode, a thin film made of indium oxide, zinc oxide, tin oxide, ITO, indium zinc oxide (abbreviated as IZO), gold, platinum, silver, copper, or the like is the first. Used as the electrode 32. When an ITO thin film or the like that exhibits light transmittance is used as the first electrode 32, a thin film that reflects light and has high conductivity such as Al, Au, and Ag is disposed on the driving substrate 21 side, and this light is transmitted. The first electrode 32 may be configured by laminating a light-transmitting ITO thin film or the like on the reflective thin film. When the first electrode 32 is provided as a cathode, the first electrode 32 is preferably made of a material having a low work function, easy electron injection into the light emitting layer, and high electrical conductivity. The first electrode 32 may be composed of a thin film made of a metal, an alkaline earth metal, a transition metal, a group 13 metal of the periodic table, or the like.

  The first electrode 32 can be formed by patterning the above materials in a matrix by a vacuum deposition method, a sputtering method, a coating method, or the like. The pattern formation of the first electrode 32 may be performed by selectively thinning the material only at a predetermined site, or after forming a thin film on one surface, the thin film is formed by a photolithography method. A pattern may be formed by patterning into a shape.

  The film thickness of the first electrode 32 is appropriately set in consideration of required characteristics and process simplicity, and is, for example, 10 nm to 10 μm, and preferably 20 nm to 1 μm.

<Partition wall>
After forming the first electrode 32, a partition wall 51 is formed as necessary. The partition wall 51 is made of, for example, an electrical insulating film, and is made of, for example, a silicon-based insulator such as spin on glass, silicon oxide (SiO ₂ ), and silicon nitride (SiN _x ), or aluminum such as alumina (Al ₂ O ₃ ). Consists of thin films made of oxides, hafnium oxides such as hafnia (HfO ₂ ), yttrium oxides such as yttria (Y ₂ O ₃ ), lanthanum oxides such as La ₂ O ₃ , or photosensitive resins. Of these, a single-layer body composed of one layer or a laminated body in which two or more layers are stacked. In addition, as a laminated body, the structure by which the kind of different layer was laminated | stacked may be sufficient, and the structure by which the same kind of layer was laminated | stacked may be sufficient. The partition wall 51 may be light transmissive or non-light transmissive. The partition 51 can be formed by, for example, a photolithography method, a vacuum deposition method, or the like.

<Predetermined layer>
The predetermined layer 34 can be formed by sequentially depositing the following predetermined material in a region surrounded by the partition wall 51. Examples of the film formation method include a vacuum deposition method and a coating method, and a film formation method suitable for the following predetermined material may be used.

  The hole injection material constituting the hole injection layer includes oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide, phenylamine-based, starburst-amine-based, phthalocyanine-based, amorphous carbon, polyaniline, and polythiophene. Derivatives and the like can be mentioned.

  As the hole transport material constituting the hole transport layer, polyvinylcarbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine in a side chain or a main chain, a pyrazoline derivative, an arylamine derivative, a stilbene derivative, Triphenyldiamine derivative, polyaniline or derivative thereof, polythiophene or derivative thereof, polyarylamine or derivative thereof, polypyrrole or derivative thereof, poly (p-phenylene vinylene) or derivative thereof, or poly (2,5-thienylene vinylene) or Examples thereof include derivatives thereof.

The light emitting layer is usually formed of an organic substance that mainly emits fluorescence and / or phosphorescence, or this organic substance and a dopant that assists the organic substance. The dopant is added, for example, in order to improve the luminous efficiency and change the emission wavelength. The organic substance may be a low molecular compound or a high molecular compound. Since the polymer compound is generally highly soluble, it is suitable for the coating method. Therefore, when the light emitting layer is formed by the coating method, the light emitting layer preferably contains the polymer compound. In this specification, the polymer compound means a compound having a polystyrene-equivalent number average molecular weight of 10 ³ to 10 ⁸ . Examples of the light emitting material constituting the light emitting layer include the following dye materials, metal complex materials, polymer materials, and dopant materials.

  Examples of dye-based materials include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds. Pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives, and the like.

  Examples of metal complex materials include rare earth metals such as Tb, Eu, and Dy, or Al, Zn, Be, Ir, Pt, etc. as a central metal, and oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline. Examples include metal complexes having a structure as a ligand, for example, iridium complexes, platinum complexes and other metal complexes having light emission from a triplet excited state, aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazolyl zinc A complex, a benzothiazole zinc complex, an azomethylzinc complex, a porphyrin zinc complex, a phenanthroline europium complex, and the like can be given.

(Polymer material)
As polymer materials, polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinyl carbazole derivatives, the above dye materials and metal complex light emitting materials are polymerized. Things can be mentioned.

(Dopant material)
Examples of the dopant material include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squalium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazolone derivatives, decacyclene, phenoxazone, and the like.

  As an electron transport material constituting the electron transport layer, an oxadiazole derivative, anthraquinodimethane or a derivative thereof, benzoquinone or a derivative thereof, naphthoquinone or a derivative thereof, anthraquinone or a derivative thereof, tetracyanoanthraquinodimethane or a derivative thereof, Fluorenone derivatives, diphenyldicyanoethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof, and the like can be given.

  As the material constituting the electron injection layer, alkali metal, alkaline earth metal, an alloy containing at least one of alkali metal and alkaline earth metal, oxide of alkali metal or alkaline earth metal, halide, carbonate, Or the mixture of these substances can be mentioned.

<Second electrode>
The 2nd electrode 33 is comprised by the electrode which shows a light transmittance. The material of the second electrode 33 is appropriately selected depending on the polarity. For example, the second electrode 33 that functions as a cathode can be formed by laminating an ITO thin film on a conductive thin film obtained by thinning a metal material of the cathode to a thickness that allows light to pass therethrough. For example, the second electrode 33 that functions as an anode can be formed by forming an ITO thin film.

  The second electrode 33 is formed on the entire surface covering the predetermined layer 34 and the partition wall 51. The second electrode 33 can be formed by, for example, a vacuum deposition method or a sputtering method.

(Sealing member)
The sealing member 41 includes linear heat conductive wires arranged in a dispersed manner. Examples of the material for the heat conductive wire include nanowires or carbon nanotubes made of a metal having low electrical resistance.

  The nanowire made of metal is made of, for example, Ag, Au, Cu, Al, and alloys thereof. For example, NRJana, L. Gearheart and CJMurphy (Chm. Commun., 2001, p617-p618), C. Ducamp-Sanguesa, R. Herrera-Urbina, and M. Figlarz, etc. (J. Solid State Chem., Vol. 100, 1992, p272-p280). For example, silver nanowires (major axis average length 1 μm, minor axis average length 10 nm) whose surface is protected with an amino group-containing polymer dispersant (product name “Solsperse 24000SC” manufactured by IC Japan Ltd.) Can be used.

  Examples of carbon nanotubes include single-walled carbon nanotubes, double-walled carbon nanotubes, multi-walled carbon nanotubes, and rope-like carbon nanotubes. The carbon nanotube may be a pure carbon nanotube composed of only carbon atoms, or may be a carbon nanotube in which some of the carbon atoms are substituted with hetero atoms such as B, N, and O. Furthermore, the carbon nanotube by which the carbon atom of the terminal and / or side surface was modified with the functional group may be sufficient.

  The first sealing member 42 is configured by disposing a heat conductive wire in a resin or the like. The first sealing member 42 can be formed, for example, by applying a dispersion liquid in which a resin material and a heat conductive wire are dispersed in a dispersion medium on the second electrode 33 and solidifying it. When a photocurable resin or a thermosetting resin is used as the resin material, the first sealing member 42 can be cured by removing the dispersion medium and performing a light irradiation process or a heat treatment. it can. Further, a dispersion liquid in which a heat conductive wire is dispersed in a dispersion medium is applied on the second electrode 33, and then the dispersion liquid is removed by a heat treatment or the like to form a layer composed only of the heat conductive wire. The first sealing member 42 can also be formed by impregnating the formed layer with resin.

  Any dispersion medium may be used as long as it dissolves or disperses the resin. For example, a chlorine solvent such as chloroform, methylene chloride, dichloroethane, an ether solvent such as tetrahydrofuran, an aromatic hydrocarbon solvent such as toluene and xylene, acetone, Examples include ketone solvents such as methyl ethyl ketone, ester solvents such as ethyl acetate, butyl acetate and ethyl cellosolve acetate, and amine compound solvents such as N-methylpyrrolidone (NMP).

  A predetermined surfactant may be added to the dispersion medium. For example, since carbon nanotubes may aggregate in the dispersion medium, a predetermined surfactant may be added to the dispersion to prevent this aggregation. Examples of surfactants include polyhydric alcohols and fatty acid ester-based or polyoxyethylene-based polyoxyethylene-based surfactants, or nonionic surfactants having both systems, polyoxyethylene-based surfactants The nonionic surface activity is preferred.

  For example, the carbon nanotubes can be uniformly dispersed in the dispersion by dispersing the carbon nanotubes in the dispersion while performing ultrasonic treatment. Further, by adding a surfactant, the carbon nanotubes can be prevented from aggregating after being dispersed in the dispersion, and the dispersion state in the dispersion can be maintained.

  Examples of the resin include low density or high density polyethylene, ethylene-propylene copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, ethylene-octene copolymer, ethylene-norbornene copolymer, ethylene-dimethano. -Polyolefin resins such as octahydronaphthalene copolymer, polypropylene, ethylene-vinyl acetate copolymer, ethylene-methyl methacrylate copolymer, ionomer resin; polyester resins such as polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate; Nylon-6, nylon-6,6, metaxylenediamine-adipic acid condensation polymer; amide resin such as polymethylmethacrylamide; acrylic resin such as polymethylmethacrylate; Styrene-acrylonitrile resins such as lene-acrylonitrile copolymer, styrene-acrylonitrile-butadiene copolymer, polyacrylonitrile; hydrophobic cellulose resins such as cellulose triacetate and cellulose diacetate; polyvinyl chloride, polyvinylidene chloride, polyfluoride Halogen-containing resins such as vinylidene chloride and polytetrafluoroethylene; hydrogen-bonding resins such as polyvinyl alcohol, ethylene-vinyl alcohol copolymer, and cellulose derivatives; polycarbonate resins, polysulfone resins, polyethersulfone resins, polyetheretherketone resins Engineering plastic resins such as polyphenylene oxide resin, polymethylene oxide resin, polyarylate resin, and liquid crystal resin.

  The second sealing member 43 is configured by dispersing and disposing heat conductive wires in glass or the like having high gas barrier properties. For example, the second sealing member 43 is prepared by first mixing glass raw material powder and carbon nanotubes into a mixed powder, heating and melting the mixed powder in an inert gas atmosphere, and cooling and solidifying this to room temperature. Can be formed. Examples of the glass raw material include silicic acid, soda ash (sodium carbonate), lime, potassium carbonate, lead oxide, boric acid, aluminum hydroxide, zinc oxide, barium carbonate, lithium carbonate, magnesium oxide, titanium oxide, and zirconium oxide.

  The second sealing member 43 can be bonded to the first sealing member 43 using, for example, the predetermined bonding material described above.

1 Display Device 11 Drive Circuit 12 Switching Tr
13 Tr for driving
14 capacitor 15 one flat plate 16 other flat plate 17 gate insulating film 18, 19 semiconductor layer 20a-20d contact wiring SG, DG gate electrode SS, DS source electrode SD, DD drain electrode 21 driving substrate 22 conductive thin plate 23 first Insulating layer 24 Second insulating layer 25 Flattening film 31 Organic EL element 32 First electrode 33 Second electrode 34 One or more predetermined layers 41 Sealing member 42 First sealing member 43 Second sealing member 45 Thermal radiation member 51 Bulkhead

Claims (3)

A driving substrate on which a driving circuit is formed;
A plurality of organic EL elements provided on the driving substrate and driven by the driving circuit to emit light to the side opposite to the driving substrate;
A display device comprising: a light-transmissive sealing member provided to cover the plurality of organic EL elements provided on the driving substrate;
The drive circuit includes a conductive thin plate provided substantially perpendicular to the thickness direction of the drive substrate,
The plurality of organic EL elements are respectively disposed at positions overlapping the conductive thin plate when viewed from one of the thickness directions of the driving substrate.
The sealing member includes linear heat conductive wires arranged in a dispersed manner,
The said heat conductive wire is a display apparatus whose diameter is 0.4 micrometer or less and whose heat conductivity is higher than the remainder except the said heat conductive wire among what comprises the sealing member. The display device further includes a heat radiation member having a heat radiation property higher than that of the conductive thin plate,
The conductive thin plate is disposed on the surface of the driving substrate opposite to the organic EL element side,
The display device according to claim 1, wherein the thermal radiation member is disposed in contact with the conductive thin plate.   The display device according to claim 1, wherein the thermally conductive wire is at least one of a nanowire made of metal and a carbon nanotube.

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