JP2011063688A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which high heat resistance and high voltage endurance can be attained and adhesiveness between a covering section of a semiconductor device and a support of a semiconductor device can be improved, thus allowing the use thereof in high temperatures. <P>SOLUTION: The semiconductor device includes a first covering section 15 and a second covering section. The first covering section 15, which covers SiC pn diode elements 1 and 2, is formed from a first silicon-containing curable composition which contains a silicon-containing polymer having a cyclic siloxane structure and a linear siloxane structure and a molecular weight of 3,000-1,000,000 and a platinum-based catalyst which is a curing reaction catalyst. The second covering section 16 is produced from a silicon-containing curable composition which covers the whole surface 15A of the first covering section 15 and is not in contact with a support 3. The second covering section 16 is formed from a second silicon-containing curable composition in which alumina particles having a particle size of 20 μm are blended with the first silicon-containing curable composition as insulating ceramics and have a volume filling factor of 50%. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device, for example, a high withstand voltage power semiconductor device having high heat resistance.

  Wide-gap semiconductor materials such as silicon carbide (hereinafter referred to as SiC) have superior physical properties such as a larger energy gap and a breakdown electric field strength that is about one order of magnitude larger than silicon (hereinafter referred to as Si). Therefore, it is suitable for use in a power semiconductor device with high heat resistance and high withstand voltage.

  Conventionally, in a high withstand voltage semiconductor device using SiC, for example, a SiC semiconductor element having a high reverse withstand voltage is accommodated in a metal package, and an insulating gas such as sulfur hexafluoride gas is filled in the package. ing. Thereby, the insulation in the surrounding space between the electrodes to which the high voltage of the SiC semiconductor element is applied is enhanced.

  Here, the sulfur hexafluoride gas has an excellent insulating property as an insulating gas, but it must be avoided from the viewpoint of preventing global warming. In particular, in order to obtain high insulation, it is necessary to set the pressure of sulfur hexafluoride gas filled in the semiconductor device to about 2 atm. Therefore, when the temperature rises during use of the semiconductor device, this pressure becomes 2 atmospheres or more. Therefore, there is a risk of explosion or gas leakage unless the package of the semiconductor device is made quite robust.

  On the other hand, Patent Document 1 (Japanese Patent Laid-Open No. 2006-206721) proposes a material having an excellent insulating property that is used to maintain a high insulating property of a semiconductor device with a substance other than the above-described sulfur hexafluoride gas. Yes. This material is an addition of an organosilicon polymer having a crosslinked structure of siloxane (Si-O-Si conjugate) and an organosilicon polymer having a linear linkage structure of siloxane linked by a siloxane bond. It is a synthetic polymer compound formed into a three-dimensional structure by linking with covalent bonds generated by the reaction. This synthetic polymer compound is applied so as to cover the entire semiconductor element (semiconductor chip) and is cured by heating from room temperature to about 200 ° C., thereby maintaining the high insulation of the semiconductor element and increasing the withstand voltage. be able to.

  Patent Document 1 discloses a semiconductor device shown in FIG. This semiconductor device has a thermosetting coating 102 in which a synthetic polymer compound is applied to a semiconductor element 101 and then coated and further thermally cured. In this semiconductor device, in order to prevent surface oxidation of the thermosetting coating 102, the metal cap 103 is attached to the support 104 and welded in a nitrogen atmosphere, and the internal space 105 is filled with nitrogen gas. In FIG. 6, 106 and 110 are terminals, 107 and 111 are insulators that insulate the terminals 106 and 110 and the support 104, and 108 and 112 are lead wires that connect the semiconductor element 101 to the terminals 106 and 110. .

  By the way, in the semiconductor device, when the metal cap 103 and the support 104 are welded, welding is incomplete if a slight amount of the synthetic polymer compound forming the coating 102 adheres to the welded portion 109. Then, air flows into the internal space 105 filled with nitrogen gas. When the semiconductor device is used for a long time in this state, the coating 102 which is a thermosetting material inside the device is oxidized and deteriorated, and the insulating property of the coating 102 is lowered. Further, since the metal cap 103 and the support 104 require a special jig when welding in a nitrogen atmosphere, the welding work requires a lot of time and cost.

  On the other hand, if a semiconductor device is molded using a general epoxy resin used in transistors, ICs, etc., a metal cap is not necessary, but epoxy resin is not flexible at high temperatures, and when it exceeds 200 ° C., glass Will become harder. For this reason, when the temperature of the semiconductor element returns from the high temperature state at the time of energization to the room temperature state at the time of off, a large number of cracks are generated inside the epoxy resin, it cannot withstand a high electric field, and the withstand voltage is good. Absent.

  In contrast, the synthetic polymer compound described above retains flexibility even at high temperatures, but when this synthetic polymer compound is cured and a semiconductor device is molded, the linear expansion coefficient between the synthetic polymer compound and the support is determined. Due to this difference, there is a problem that the mold peels off when the temperature rises and falls repeatedly.

  Therefore, although not disclosed and not a conventional example, an application (Japanese Patent Application No. 2008-054630) by the present applicant describes a GTO thyristor device as shown in FIG. In this GTO thyristor device, the covering portion 215 covering the GTO thyristor element 201 contains a silicon-containing polymer having one or more cross-linked structures of siloxane (Si—O—Si conjugate), and is a curing reaction catalyst. It is formed with a silicon-containing curable composition containing a platinum-based catalyst and an iron group-containing rust. Further, this GTO thyristor device has a covering portion 216 that covers the covering portion 215 and the anode terminal 205 and the gate terminal 208 on the support 211. The covering portion 216 is formed of a silicon-containing curable composition in which alumina fine particles having a particle diameter of 20 μm are blended as insulating ceramics with the silicon-containing curable composition forming the covering portion 215 at a volume filling rate of 50%. ing. In FIG. 7, 202, 206 and 210 are anode electrodes, gate electrodes and cathode electrodes, 203 and 207 are lead wires, and 212 and 213 are insulating materials.

  According to the GTO thyristor device, the GTO thyristor element 201 can be insulated by the covering portion 215 having high heat resistance, high voltage resistance and high flexibility. In addition, the covering portion 216 does not generate cracks even when used at a high temperature (for example, 200 ° C. or higher), and can achieve high dielectric strength. In addition, the coating portion 216 has a smaller linear expansion coefficient due to the blending of the ceramics, and reduces the difference in linear expansion coefficient from the support 211 made of a metal such as copper and supporting the GTO thyristor element 201. By doing so, the adhesion between the covering portion 216 and the support 211 is improved.

  However, even in the GTO thyristor device, since there is a considerable difference between the linear expansion coefficient of 150 ppm of the covering portion 216 and the linear expansion coefficient of 17 ppm of the support 211 made of copper, when used at a high temperature (200 ° C. or more), the support 211 There is a possibility that a stress is generated between the covering portion 216 and the covering portion 216 is peeled off from the support 211. When peeling of this coating | coated part 216 arises, the sealing function by the coating | coated part 216 will be impaired, and the reliability of a GTO thyristor apparatus will fall.

JP 2006-206721 A JP 2005-325174 A JP 2008-266484 A

  Accordingly, an object of the present invention is to provide a semiconductor device that can achieve high heat resistance and high voltage resistance, improve adhesion between the covering portion of the semiconductor element and the support of the semiconductor element, and can be used at a high temperature. It is to provide.

（式中、Ｒ^１〜Ｒ^７は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ^５及びＲ^６は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ^８は炭素原子数２〜４のアルキレン基であり、Ｚは炭素原子数２〜４のアルケニル基若しくはアルキニル基であり、ａは２〜７の数であり、ｂは１〜７の数であり、ｂを繰り返し数とする重合部分と、ａ−ｂを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｅは０〜３の数である。ｃ及びｄは、ｄ：ｃ＝１：１〜１：１００且つ全てのｃと全てのｄとの合計が１５以上となる数であって、且つ一般式（１）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｃを繰り返し数とする重合部分と、ｄを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
(Ｂ)成分：下記一般式（２）で表される珪素含有化合物。

（式中、Ｒ^９〜Ｒ^１５は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ^１３及びＲ^１４は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ１６は炭素原子数２〜４のアルキレン基であり、ｆは２〜７の数であり、ｇは１〜７の数であり、ｇを繰り返し数とする重合部分と、ｆ−ｇを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｊは０〜３の数である。ｈ及びｉは、ｉ：ｈ＝１：１〜１：１００且つ全てのｈと全てのｉとの合計が１５以上となる数であって、且つ一般式（２）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｈを繰り返し数とする重合部分と、ｉを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。）
(Ｄ)成分：白金系触媒である硬化反応触媒
(Ｆ)成分：セラミックス粒子 In order to solve the above problems, a semiconductor device of the present invention includes a semiconductor element,
A support on which the semiconductor element is mounted;
An electrical connection for electrically connecting the semiconductor element to an external device;
A first covering portion made of a silicon-containing curable composition that covers the upper surface of the semiconductor element and the support on which the semiconductor element is placed and covers at least a part of the electrical connection portion;
And a second covering portion made of a silicon-containing curable composition that covers the surface of the first covering portion and does not contact the support,
The silicon-containing curable composition for producing the first covering portion is:
A silicon-containing curable composition containing the following component (A), component (B) and component (D):
The silicon-containing curable composition for producing the second covering portion is:
A silicon-containing curable composition containing the following component (A), component (B), component (D) and component (F):
The said 2nd coating | coated part is the hardened | cured material which heat-cured the said silicon-containing curable composition, The linear expansion coefficient of the said hardened | cured material is 50-200 ppm / degreeC, It is characterized by the above-mentioned.
Component (A): A silicon-containing compound represented by the following general formula (1).

(In the formula, R ^{1 to} R ⁷ may be the same or different and may be substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. An aromatic hydrocarbon group of 6 to 12 (provided that R ⁵ and R ⁶ cannot simultaneously become a saturated aliphatic hydrocarbon group of 1 to 12 carbon atoms), and R ⁸ has 2 to 2 carbon atoms. 4 is an alkylene group, Z is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, a is a number from 2 to 7, b is a number from 1 to 7, and b is a repeating number. The polymerization portion and the polymerization portion having ab as the number of repetitions may be in the form of blocks or random, e is a number from 0 to 3. c and d are d: c = 1: 1 to 1: 100 and the sum of all c and all d is 15 or more, and in general The silicon-containing compound represented by (1) is a number having a mass average molecular weight of 3000 to 1,000,000, and a polymerization part having c as the number of repetitions and a polymerization part having d as the number of repetitions are block-like. Or random.)
Component (B): A silicon-containing compound represented by the following general formula (2).

(In formula, R < ⁹ > -R < ¹⁵ > may be same or different, The carbon atom which may be substituted by the C1-C12 saturated aliphatic hydrocarbon group or a saturated aliphatic hydrocarbon group. An aromatic hydrocarbon group having 6 to 12 carbon atoms (provided that R ¹³ and R ¹⁴ do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R16 has 2 to 4 carbon atoms. F is a number from 2 to 7, g is a number from 1 to 7, and a polymerization portion having g as a repeating number and a polymerization portion having f-g as a repeating number are blocks. J may be a number from 0 to 3. h and i are i: h = 1: 1 to 1: 100 and the sum of all h and all i The number average molecular weight of the silicon-containing compound represented by the general formula (2) is 30 and the number is 15 or more. It is a number 0 to 100 to 250,000. Also, the overlapping portion of the number of repeated h, and the overlapping portion of the number of repeated i, be a block form or a random form.)
Component (D): a curing reaction catalyst that is a platinum-based catalyst
Component (F): Ceramic particles

  In the semiconductor device of the present invention, the first covering portion that covers the upper surface of the semiconductor element and the support on which the semiconductor element is placed and covers at least a part of the electrical connection portion is provided with a silicon-containing curable composition. It was made with a thing. And this silicon-containing curable composition contains the platinum-type catalyst which contains said (A) component and (B) component, and is a hardening reaction catalyst. Therefore, it is possible to insulate the semiconductor element with the first covering portion having high heat resistance and high voltage resistance and high flexibility.

  The second covering portion is made of a silicon-containing curable composition that covers the surface of the first covering portion and does not contact the support. The silicon-containing curable composition for producing the second covering portion contains the above-described component (A) and component (B) and a platinum-based catalyst that is a curing reaction catalyst. Ceramic particles as a filler. Even if the second covering portion is used at a high temperature (for example, 200 ° C. or higher), cracks and the like are not generated, and a high dielectric strength can be achieved. Further, since the second covering portion covers the surface of the first covering portion but does not contact the support, there is a considerable difference in linear expansion coefficient from a metal or ceramic support such as copper. A certain 2nd coating | coated part does not peel from a support body at the time of high temperature (for example, 200 degreeC or more). Moreover, the 1st coating | coated part works as a buffer material between a support body and a 2nd coating | coated part, and can reduce the stress at the time of high temperature.

  Thus, according to the semiconductor device of the present invention, high heat resistance and high voltage resistance can be achieved, and the adhesion between the covering portion of the semiconductor element and the support of the semiconductor element can be improved, enabling use at a high temperature. it can. The second covering portion desirably covers the entire surface of the first covering portion.

  The ceramic particles preferably have a particle size of 1 to 50 μm, more preferably 5 to 25 μm. Moreover, it is preferable that the volume filling rate of the ceramics which occupies for the said silicon-containing curable composition which comprises the said 2nd coating part is 40 to 70%, and 50 to 60% is more preferable. Thereby, the linear expansion coefficient of the hardened | cured material formed by hardening | curing the said silicon-containing curable composition can be 50-200 ppm / degreeC, More preferably, it can be 100-150 ppm / degreeC. In addition, if the linear expansion coefficient of the cured product obtained by curing the silicon-containing curable composition forming the second covering portion is less than 50 ppm / ° C., the adhesion with the first covering portion is deteriorated, and the insulating material No longer works. On the other hand, if the linear expansion coefficient of a cured product obtained by curing the silicon-containing curable composition forming the second covering portion is greater than 200 ppm / ° C., a hardness that can protect the semiconductor device cannot be obtained.

  The platinum catalyst of the component (D) is a catalyst that contains one or more metals of platinum, palladium, and rhodium and promotes the hydrosilylation reaction, and known ones can be used. Examples of the platinum-based catalyst used as a catalyst for hydrosilylation reaction include platinum-carbonylvinylmethyl complex, platinum-divinyltetramethyldisiloxane complex, platinum-cyclovinylmethylsiloxane complex, platinum-octylaldehyde complex and the like. The compounds in which platinum in these catalysts is replaced with palladium or rhodium, which are also platinum-based metals, may be used, and these may be used alone or in combination of two or more. From the viewpoint of curability, those containing platinum are preferred, and specifically, platinum-carbonylvinylmethyl complexes are particularly preferred. In addition, so-called Wilkinson catalysts containing the above platinum-based metals, such as chlorotristriphenylphosphine rhodium (I), are also included in the platinum catalyst of component (D).

  Examples of the ceramic particles of the component (F) include colloidal silica, silica filler, silica gel, minerals such as mica and montmorillonite, metal oxides such as aluminum oxide, zinc oxide, and silicon dioxide, silicon nitride, aluminum nitride, Examples thereof include ceramics such as boron nitride and silicon carbide. Aluminum oxide is preferable from the viewpoint of heat resistance.

  Moreover, according to this invention, since the linear expansion coefficient of the hardened | cured material which comprises the said 2nd coating | coated part is 50 ppm / degrees C or more, adhesiveness with a 1st coating | coated part is good and the linear expansion coefficient of the said hardened | cured material is good. Is 200 ppm / ° C. or less, a hardness sufficient to protect the semiconductor device can be obtained.

In the semiconductor device of one embodiment, the first covering portion contains the component (F),
Further, a third covering portion whose surface is coated on the first covering portion and directly covering the semiconductor element;
A surface of the second covering portion is coated and a fourth covering portion that directly covers the first covering portion;
The silicon-containing curable composition for producing the third covering portion and the fourth covering portion is:
A silicon-containing curable composition containing the above component (A), component (B), component (D) and component (F),
Of the components of the silicon-containing curable composition for producing the third and fourth coating parts, the content (%) of the component (F) is a component of the silicon-containing curable composition for producing the second coating part. The content is lower than the content (%) of the component (F).

  According to the semiconductor device of this embodiment, inclusion of the component (F) among the components of the third covering portion that directly covers the semiconductor element and the fourth covering portion that directly covers the first covering portion. % By weight was lower than the content% by weight of the component (F) in the components of the first and second coating parts. Thereby, the viscosity and adhesive force of the said 3rd, 4th coating | coated part can be made high compared with the viscosity and adhesive force of the said 1st, 2nd coating | coated part. In addition, it is desirable that the content weight% of the component (F) in the third and fourth covering portions is 5% or less. Further, it is more preferable that the content% by weight of the component (F) in the third and fourth covering portions is substantially zero%.

  In one embodiment, the semiconductor device includes a ceramic insulating substrate disposed between the semiconductor element and the support.

  According to the semiconductor device of this embodiment, the semiconductor element can be insulated from the support by the ceramic insulating substrate. The ceramic insulating substrate is made of aluminum oxide, aluminum nitride, silicon nitride or the like as an example.

  In one embodiment of the semiconductor device, the support is made of a metal such as copper or aluminum, a composite material of a metal and a semiconductor such as Al-SiC, or a stacked structure of different metals such as copper and molybdenum. Made of material.

  In one embodiment, the surface of the support is plated with gold or nickel.

  In one embodiment, the semiconductor device includes a frame that is disposed on the support and covers the side surfaces of the first and second cover portions.

  According to the semiconductor device of this embodiment, the strength in the vicinity of the side surfaces of the first and second covering portions can be improved.

  In one embodiment, the semiconductor element is a wide gear semiconductor element made of a wide gear semiconductor.

  According to the semiconductor device of this embodiment, a wide gearup semiconductor made of SiC, GaN, or other wide gap semiconductor with the first covering portion having high heat resistance and high voltage resistance and high flexibility. The element can be insulated, and the second covering portion that covers the entire surface of the first covering portion but is not in contact with the support does not generate cracks even when used at a high temperature (eg, 200 ° C. or higher). High dielectric strength can be achieved.

  In one embodiment, the silicon-containing curable composition of the second covering portion may contain ceramic particles having a volume filling rate of 40 to 70% from the viewpoint of curability and handling properties. desirable.

  According to the semiconductor device of the present invention, a platinum-based catalyst that has a cyclic siloxane structure and a chain siloxane structure, contains a silicon-containing polymer having a molecular weight of 3000 to 1,000,000, and is a curing reaction catalyst is blended. The semiconductor element can be covered and insulated with the first covering portion having high heat resistance and high voltage resistance and high flexibility, which is manufactured from the silicon-containing curable composition.

  The second covering portion covering the surface of the first covering portion contains a silicon-containing polymer having a cyclic siloxane structure and a chain siloxane structure and having a molecular weight of 3000 to 1,000,000, and Since a silicon-containing curable composition containing ceramic particles as a filler in a silicon-containing curable composition containing a platinum-based catalyst that is a curing reaction catalyst was used, it was used at a high temperature (eg, 200 ° C. or higher). In addition, cracks and the like are not generated, and a high dielectric strength can be achieved. Further, since the second covering portion does not contact the support, the difference in linear expansion coefficient from the support at a high temperature (for example, 200 ° C. or higher). And the first covering portion acts as a cushioning material between the support and the second covering portion, and stress at high temperatures can be reduced.

  Thus, according to the semiconductor device of the present invention, high heat resistance and high voltage resistance can be achieved, and the adhesion between the covering portion of the semiconductor element and the support of the semiconductor element can be improved, enabling use at a high temperature. it can.

It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 1st Embodiment of the semiconductor device of this invention. It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 3rd Embodiment of the semiconductor device of this invention. It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 4th Embodiment of the semiconductor device of this invention. It is sectional drawing which shows the semiconductor device provided with the SiC GTO thyristor which is 5th Embodiment of the semiconductor device of this invention. It is sectional drawing which shows the modification of the said 3rd Embodiment. It is sectional drawing which shows the conventional semiconductor device. It is sectional drawing of the GTO thyristor apparatus of a reference example.

  Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments. Note that the present invention is not limited to these embodiments.

(First embodiment)
FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention. The semiconductor device according to the first embodiment includes a SiC GTO thyristor element 1 having a withstand voltage of 5 kV, and this SiC thyristor element 1 is mounted on an upper surface 3A of a support 3 made of copper.

  The anode electrode 2 of the SiC GTO thyristor element 1 is connected to the upper end of the anode terminal 10 by a lead wire 7 made of aluminum, gold, copper or the like. The gate electrode 6 of the GTO thyristor element 1 is connected to the upper end of the gate terminal 11 by a lead wire 8 made of aluminum, gold, copper or the like. The lead wires 7, 8 and the anode terminal 10 and the gate terminal 11 are electrical connection portions.

  Further, the cathode electrode 4 of the SiC GTO thyristor element 1 is electrically connected to the copper support 3 of the package as a cathode terminal by using a gold-based solder such as gold silicon, gold tin, gold germanium or other high-temperature solder. It is attached to keep the connection. The anode terminal 10 and the gate terminal 11 are fixed through the support 3 while maintaining insulation between the anode terminal 10 and the gate terminal 11 with the insulating materials 14 and 19, respectively.

  The entire surface of the SiC GTO thyristor element 1, the vicinity of the connecting portion between the lead wires 7 and 8 and the SiC GTO thyristor element 1, most of the upper surface 3 A of the support 3, and the anode protruding from the upper surface 3 A of the support 3 A first silicon-containing curable composition is applied so as to cover the terminal 10 and the gate terminal 11 and serve as the covering portion 15 as the first covering portion.

  The first silicon-containing curable composition used as the first covering portion 15 was synthesized by the synthesis step 1 to the synthesis step 5 described below. In the synthesis steps 1 to 5, “part” represents part by weight. The 1st coating | coated part 15 is obtained by carrying out hardening reaction of the said 1st silicon containing curable composition at 250 degreeC for 3 hours.

  Further, in this embodiment, the second surface is covered so that the entire surface 15A of the first covering portion 15 is covered but the portion 3B of the supporting body 3 exposed from the first covering portion 15 is not covered and does not contact the supporting body 3. The 2nd silicon-containing curable composition used as the coating | coated part 16 is apply | coated. The second silicon-containing curable composition used as the second covering portion 16 is composed of alumina fine particles having a particle diameter of 20 μm as insulating ceramics in the first silicon-containing curable composition at a volume filling rate of 50%. It is blended. The 1st coating | coated part 16 is obtained by making this 2nd silicon-containing curable composition make hardening reaction at 200 degreeC for 6 hours. The linear expansion coefficient of the second silicon-containing curable composition after curing is 150 ppm / ° C.

  [Synthesis step 1] 90 parts of dichlorodimethylsilane and 9 parts of dichlorodiphenylsilane were mixed and dropped into a mixture of 100 parts of ion-exchanged water, 50 parts of toluene and 450 parts of 48% aqueous sodium hydroxide, Polymerization was carried out at 5 ° C. for 5 hours. The obtained reaction solution was washed with 500 parts of ion exchange water, and then this toluene solution was dehydrated, 20 parts of pyridine was added, 20 parts of dimethylchlorosilane was further added thereto, and the mixture was stirred at 70 ° C. for 30 minutes. Then, after washing with 100 parts of ion exchange water, the solvent was distilled off under reduced pressure at 150 ° C. Next, it was washed with 100 parts of acetonitrile, and then the solvent was distilled off under reduced pressure at 70 ° C. to obtain a chain polysiloxane compound (HSi-1). The molecular weight by GPC of the chain polysiloxane compound (HSi-1) was Mw = 20,000.

  [Synthesis Step 2] 100 parts of the acyclic polysiloxane compound (HSi-1) obtained in Synthesis Step 1 above is dissolved in 200 parts of toluene, 0.003 part of platinum-carbonylvinylmethyl complex as a platinum-based catalyst, and unsaturated 10 parts of 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, which is a cyclic polysiloxane compound having a bond, was added and reacted at 105 ° C. for 2 hours. The solvent was distilled off under reduced pressure at 70 ° C. and then washed with 100 parts of acetonitrile. Thereafter, the solvent was distilled off under reduced pressure at 70 ° C. to obtain a silicon-containing compound (VSi-1). The silicon-containing compound (VSi-1) is a compound corresponding to the general formula (1), and as a result of analysis by GPC, Mw = 22,000.

  [Synthesis Step 3] 90 parts of dichlorodimethylsilane and 9 parts of dichlorodiphenylsilane were mixed and dropped into a mixture of 100 parts of ion exchange water, 50 parts of toluene and 450 parts of 48% aqueous sodium hydroxide, Polymerization was carried out at 5 ° C. for 5 hours. The obtained reaction solution was washed with 500 parts of ion exchange water, and then this toluene solution was dehydrated, 20 parts of pyridine was added, 20 parts of dimethylvinylchlorosilane was further added, and the mixture was stirred at 70 ° C. for 30 minutes. Then, after washing with 100 parts of ion exchange water, the solvent was distilled off under reduced pressure at 150 ° C. Next, it was washed with 100 parts of acetonitrile, and then the solvent was distilled off under reduced pressure at 70 ° C. to obtain a chain polysiloxane compound (VSi-2) having an unsaturated bond. The molecular weight by GPC of the chain polysiloxane compound (VSi-2) having an unsaturated bond was Mw = 20,000.

  [Synthesis Step 4] 100 parts of an acyclic polysiloxane compound (VSi-2) having an unsaturated bond obtained in Synthesis Step 1 above is dissolved in 200 parts of toluene, and a platinum-carbonylvinylmethyl complex 0.003 as a platinum catalyst. And 10 parts of 1,3,5,7-tetramethylcyclotetrasiloxane, which is a cyclic polysiloxane compound, were added and reacted at 105 ° C. for 2 hours. The solvent was distilled off under reduced pressure at 70 ° C. and then washed with 100 parts of acetonitrile. Thereafter, the solvent was distilled off under reduced pressure at 70 ° C. to obtain a silicon-containing compound (HSi-2). The silicon-containing compound (HSi-2) is a compound corresponding to the general formula (2), and the molecular weight by GPC was Mw = 22,000.

  [Synthesis step 5] 50 parts of the silicon-containing compound (VSi-1) obtained in the synthesis step 2 as the component (A) and the silicon-containing compound (HSi-2) obtained in the synthesis step 4 as the component (B) To the mixture of 50 parts, 0.005 part of a platinum-carbonylvinylmethyl complex, which is a platinum-based catalyst, was mixed as component (D) to obtain the first silicon-containing curable composition.

  According to this embodiment, the second silicon-containing curable composition to be the second covering portion 16 is composed of 50% volume of alumina fine particles having a particle diameter of 20 μm as ceramics in the first silicon-containing curable composition. It is blended at the filling rate. The second silicon-containing curable composition was subjected to a curing reaction at 200 ° C. for 6 hours to obtain the second covering portion 16. The linear expansion coefficient of the second silicon-containing curable composition after curing is 150 ppm / ° C. According to this embodiment, even if the second covering portion 16 is used at a high temperature (for example, 200 ° C. or higher), cracks and the like do not occur, and a high dielectric strength can be achieved. Further, since the second covering portion 16 does not come into contact with the support 3, the second covering portion 16 does not peel off due to a difference in linear expansion coefficient from the support 3 at a high temperature (for example, 200 ° C. or more), and the first covering portion 16 15 acts as a cushioning material between the support 3 and the second covering portion 16, and can reduce stress at high temperatures.

  The silicon-containing polymers (A) and (B) contained in the first and second silicon-containing curable compositions may be those having the following compositions.

（式中、Ｒ^１〜Ｒ^７は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ^５及びＲ^６は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ^８は炭素原子数２〜４のアルキレン基であり、Ｚは炭素原子数２〜４のアルケニル基若しくはアルキニル基であり、ａは２〜７の数であり、ｂは１〜７の数であり、ｂを繰り返し数とする重合部分と、ａ−ｂを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｅは０〜３の数である。ｃ及びｄは、ｄ：ｃ＝１：１〜１：１００且つ全てのｃと全てのｄとの合計が１５以上となる数であって、且つ一般式（１）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｃを繰り返し数とする重合部分と、ｄを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。） Silicon-containing polymer (A) component: The following (A) component: A silicon-containing compound represented by the following general formula (1).

(In the formula, R ^{1 to} R ⁷ may be the same or different and may be substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. An aromatic hydrocarbon group of 6 to 12 (provided that R ⁵ and R ⁶ cannot simultaneously become a saturated aliphatic hydrocarbon group of 1 to 12 carbon atoms), and R ⁸ has 2 to 2 carbon atoms. 4 is an alkylene group, Z is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, a is a number from 2 to 7, b is a number from 1 to 7, and b is a repeating number. The polymerization portion and the polymerization portion having ab as the number of repetitions may be in the form of blocks or random, e is a number from 0 to 3. c and d are d: c = 1: 1 to 1: 100 and the sum of all c and all d is 15 or more, and in general The silicon-containing compound represented by (1) is a number having a mass average molecular weight of 3000 to 1,000,000, and a polymerization part having c as the number of repetitions and a polymerization part having d as the number of repetitions are block-like. Or random.)

（式中、Ｒ^９〜Ｒ^１５は、同一でも異なっていてもよく、炭素原子数１〜１２の飽和脂肪族炭化水素基、又は、飽和脂肪族炭化水素基で置換されていてもよい炭素原子数６〜１２の芳香族炭化水素基であり（但し、Ｒ^１３及びＲ^１４は同時に炭素原子数１〜１２の飽和脂肪族炭化水素基となることはない）、Ｒ^１６は炭素原子数２〜４のアルキレン基であり、
ｆは２〜７の数であり、ｇは１〜７の数であり、ｇを繰り返し数とする重合部分と、ｆ−ｇを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。ｊは０〜３の数である。ｈ及びｉは、ｉ：ｈ＝１：１〜１：１００且つ全てのｈと全てのｉとの合計が１５以上となる数であって、且つ一般式（２）で表される珪素含有化合物の質量平均分子量を３０００〜１００万とする数である。また、ｈを繰り返し数とする重合部分と、ｉを繰り返し数とする重合部分とは、ブロック状であってもランダム状であってもよい。） Silicon-containing polymer (B) component: A silicon-containing compound represented by the following general formula (2).

(In formula, R < ⁹ > -R < ¹⁵ > may be same or different, The carbon atom which may be substituted by the C1-C12 saturated aliphatic hydrocarbon group or a saturated aliphatic hydrocarbon group. An aromatic hydrocarbon group having a number of 6 to 12 (provided that R ¹³ and R ¹⁴ do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R ¹⁶ has 2 to 2 carbon atoms. 4 alkylene groups,
f is a number from 2 to 7, g is a number from 1 to 7, and the polymerization part having g as the number of repetitions and the polymerization part having f-g as the number of repetitions are random even in a block form. It may be a shape. j is a number from 0 to 3. h and i are numbers in which i: h = 1: 1 to 1: 100, and the sum of all h and all i is 15 or more, and is a silicon-containing compound represented by the general formula (2) The number average molecular weight is 3000 to 1,000,000. Moreover, the polymer part having h as the number of repetitions and the polymer part having i as the number of repetitions may be in a block form or in a random form. )

  Moreover, 1-50 micrometers is preferable and, as for the particle size of the ceramic particle which the 2nd silicon-containing curable composition which comprises the said 2nd coating part 16 contains, 5-25 micrometers is more preferable. Moreover, it is preferable that the volume filling rate of the ceramic particle which occupies for said 2nd silicon containing curable composition is 40 to 70%, and 50 to 60% is more preferable. Thereby, the linear expansion coefficient of the hardened | cured material formed by hardening | curing the said 2nd silicon containing curable composition can be 50-200 ppm / degreeC, More preferably, it can be 100-150 ppm / degreeC. In addition, when the linear expansion coefficient of the hardened | cured material which hardens the 2nd silicon-containing curable composition which comprises the said 2nd coating part 16 is made smaller than 50 ppm / degrees C, the adhesiveness with the 1st coating part 15 will be sufficient. It becomes worse and does not act as an insulating material. On the other hand, when the linear expansion coefficient of the cured product obtained by curing the second silicon-containing curable composition forming the second covering portion 16 is greater than 200 ppm / ° C., a hardness that can protect the semiconductor device is obtained. Absent.

  In addition, the second silicon-containing curable composition forming the second covering portion 16 contains insulating ceramic fine particles, whereby the gas barrier property of the second silicon-containing curable composition is improved. That is, the second silicon-containing curable composition is less susceptible to oxidative degradation.

(Second Embodiment)
Next, a second embodiment of the semiconductor device of the present invention will be described. This 2nd Embodiment differs in the composition of the silicon-containing curable composition which forms the 1st coating | coated part 15 and the 2nd coating | coated part 16 in above-mentioned 1st Embodiment from the above-mentioned 1st Embodiment. Therefore, in the second embodiment, points different from the first embodiment will be described.

  In the second embodiment, the first covering portion 15 is formed of the third silicon-containing curable composition instead of the first silicon-containing curable composition. This third curable genus was synthesized by the synthesis step 6 described below. In this synthesis step 6, “parts” represents parts by weight. The 1st coating | coated part 15 is obtained by making the said 3rd silicon-containing curable composition carry out hardening reaction at 250 degreeC for 3 hours.

  Further, in the second embodiment, the second covering portion is covered so that the entire surface 15A of the first covering portion 15 is covered but the portion 3B of the support 3 exposed from the first covering portion 15 is not covered and is not touched. A fourth silicon-containing curable composition to be 16 is applied. The fourth silicon-containing curable composition used as the second covering portion 16 is compounded with the third silicon-containing curable composition with alumina fine particles having a particle diameter of 20 μm as ceramic particles at a volume filling rate of 40%. is doing. The second covering portion 16 is obtained by allowing the fourth silicon-containing curable composition to undergo a curing reaction at 200 ° C. for 6 hours. The linear expansion coefficient of the fourth silicon-containing curable composition is 180 ppm / ° C.

  [Synthesis Step 6] 50 parts of silicon-containing compound (VSi-1) obtained in Synthesis Step 2 as component (A) and silicon-containing compound (HSi-2) obtained in Synthesis Step 4 as component (B) 50 parts is mixed with 0.01 parts of platinum-carbonylvinylmethyl complex which is a platinum-based catalyst as component (D) and 0.01 parts of iron (III) acetylacetonate. A silicon-containing curable composition was obtained.

  According to the second embodiment, the fourth silicon-containing curable composition serving as the second covering portion 16 is composed of 40% alumina fine particles having a particle diameter of 20 μm as ceramics in the third silicon-containing curable composition. It is blended at a volume filling rate of. Then, the fourth silicon-containing curable composition was subjected to a curing reaction at 200 ° C. for 6 hours to obtain the second covering portion 16. The fourth silicon-containing curable composition after curing has a linear expansion coefficient of 180 ppm / ° C. According to the second embodiment, the second covering portion 16 does not generate cracks even when used at a high temperature (for example, 200 ° C. or higher), and can achieve high dielectric strength. Further, since the second covering portion 16 does not come into contact with the support 3, the second covering portion 16 does not peel off due to a difference in linear expansion coefficient from the support 3 at a high temperature (for example, 200 ° C. or more), and the first covering portion 16 15 acts as a cushioning material between the support 3 and the second covering portion 16, and can reduce stress at high temperatures.

  In the first and second embodiments, a third covering portion (not shown) which is the surface of the first covering portion 15 and serves as an undercoat portion which directly covers the GTO thyristor element 1. And a fourth covering portion (not shown) serving as an undercoat portion that covers the surface of the second covering portion 16 and directly covers the first covering portion 15. Here, the silicon-containing curable composition for producing the third covering portion (not shown) and the fourth covering portion (not shown) is composed of the components (A), (B), (D ) Component and (F) component containing a silicon-containing curable composition. And the content weight% of the said (F) component of the components of the silicon containing curable composition which produces the said 3rd and 4th coating part produces the said 1st and 2nd coating parts 15 and 16. It is lower than the content by weight of the component (F) in the components of the silicon-containing curable composition. That is, the components of the silicon-containing curable composition for producing the third and fourth coating portions are the components of the silicon-containing curable composition for producing the first coating portion 15 except for the component (F). It is the same. As a result, the viscosity and adhesive strength of the third and fourth covering portions (not shown), which are the undercoat portions, are made higher than the viscosity and adhesive strength of the first and second covering portions 15 and 16. be able to. In addition, it is desirable that the content weight% of the component (F) in the third and fourth covering portions is 5% or less. Further, it is more preferable that the content% by weight of the component (F) in the third and fourth covering portions is substantially zero%.

  Further, the thickness of the first covering portion 15 is set to 0.1 mm or more and 10 mm or less, the thickness of the second covering portion 16 is set to 5 mm or more and 30 mm or less, and the third and fourth covering portions are formed. The thickness is preferably 0.01 mm or more and 5 mm or less. In the above embodiment, the support 3 is made of copper. However, in addition to copper, a metal such as aluminum, a metal-semiconductor composite material such as Al-SiC, or a dissimilar metal such as copper and molybdenum. You may produce with the laminated structure material of. The surface of the support may be plated with gold or nickel.

(Third embodiment)
Next, FIG. 2 shows a third embodiment of the semiconductor device of the present invention. This third embodiment has a SiC GTO thyristor element 21 instead of the SiC GTO thyristor element 1 of FIG. 1, and a metal material such as copper or aluminum or Al-SiC instead of the support 3. A support 23 made of a composite material or a laminated structure material of dissimilar metals such as copper and molybdenum, and a ceramic insulating substrate 25 placed on the support 23 and on which the SiC GTO thyristor element 21 is placed, Different from the first embodiment described above. Therefore, in the third embodiment, parts different from the first embodiment will be mainly described.

  In the GTO thyristor element 21 of the third embodiment, the anode electrode 22 is connected to the upper end of the anode terminal 10 by a lead wire 7 made of aluminum, gold, copper or the like, and the cathode electrode 27 is placed on the ceramic insulating substrate 25. Has been placed. The gate electrode 26 of the GTO thyristor element 21 is connected to the upper end of the gate terminal 11 by a lead wire 8 made of aluminum, gold, copper or the like. That is, in this third embodiment, the GTO thyristor element 21 has a cathode electrode 27, and is provided with a ceramic insulating substrate 25 and a supporting body 23 instead of the supporting body 3, and the ceramic insulating substrate 25 is provided under the SiC GTO thyristor element 21. Is different from the first embodiment described above in that the cathode electrode 27 of the GTO thyristor element 21 is insulated from the support 23. In the third embodiment, the first cover 15 covers up to the end 23B of the surface 23A of the support 23.

  In the third embodiment, as shown in FIG. 5, the first covering portion 15 is covered with a surface 31A and directly covers the GTO thyristor element 21. The second covering portion 16 may be provided with a surface 32A and a fourth covering portion 32 that directly covers the first covering portion 15. The third covering portion 31 is an undercoat of the element covering (first covering portion 15), and the fourth covering portion 32 is an undercoat of the mold (second covering portion 16).

  Here, the silicon-containing curable composition for producing the third covering portion 31 and the fourth covering portion 32 has the above-mentioned components (A), (B), (D) and (F). It is a silicon-containing curable composition to contain. The content weight percentage of the component (F) in the components of the silicon-containing curable composition for producing the third and fourth covering portions 31 and 32 is the first and second covering portions 15 and 16. The content is lower than the content% by weight of the component (F) among the components of the silicon-containing curable composition. That is, the components of the silicon-containing curable composition for producing the third and fourth coating portions 31 and 32 are the silicon-containing curable composition for producing the first coating portion 15 except for the component (F). It is the same as the component of a thing. Thereby, the viscosity and adhesive force of the third and fourth covering portions 31 and 32 can be made higher than the viscosity and adhesive force of the first and second covering portions 15 and 16. Moreover, it is desirable that the content weight percentage of the component (F) in the third and fourth covering portions 31 and 32 is 5% or less. Further, it is more preferable that the content weight% of the component (F) in the third and fourth covering portions 31 and 32 is about 0%.

  Further, the thickness of the first covering portion 15 is set to 0.1 mm to 10 mm, the thickness of the second covering portion 16 is set to 5 mm to 30 mm, and the third and fourth covering portions 31 are used. 32 is preferably 0.01 mm or more and 5 mm or less. Further, in FIG. 5, the third covering portion 31 covers only the GTO thyristor element 21 and its peripheral portion. However, the third covering portion 31 is applied to the end of the support 23 so as to cover the first covering portion. You may extend to 15 ends. The ceramic insulating substrate 25 is made of aluminum oxide, aluminum nitride, silicon nitride or the like as an example. Further, the surface of the support 23 may be plated with gold or nickel.

(Fourth embodiment)
Next, FIG. 3 shows a fourth embodiment of the semiconductor device of the present invention. The fourth embodiment has a SiC GTO thyristor element 41 having a withstand voltage of 5 kV, and the SiC thyristor element 41 is placed so that the cathode electrode 49 is disposed on the upper surface 42A of the ceramic insulating substrate 42. The ceramic insulating substrate 42 is disposed on the support 43. As an example, the ceramic insulating substrate 42 is made of aluminum oxide, aluminum nitride, silicon nitride, or the like. The support 43 is made of a metal material such as copper or aluminum, a composite material such as Al-SiC, or a laminated structure material of different metals such as copper and molybdenum. Further, the surface of the support 43 may be plated with gold or nickel.

  The anode electrode 45 of the SiC GTO thyristor element 41 is connected to the electrode 47 by a lead wire 46 made of aluminum, gold, copper or the like. The gate electrode 44 of the GTO thyristor element 41 is connected to the electrode 50 by a lead wire 48 made of aluminum, gold, copper or the like. A gate terminal 51 extending on the electrode 50 is connected to the electrode 50, and an anode terminal 52 extending on the electrode 47 is connected to the electrode 47.

  Then, the covering which is the first covering portion is formed so as to cover the entire surface of the SiC GTO thyristor element 41, the lead wires 46 and 48, the electrodes 47 and 50, and a part of the terminals 51 and 52 on the electrodes 47 and 50. A first silicon-containing curable composition that becomes part 53 is applied. Here, the first silicon-containing curable composition used as the first covering portion 53 is the first silicon-containing curable composition used as the first covering portion 15 of the first embodiment described above. Since it is the same as a thing, detailed description is abbreviate | omitted.

  In this embodiment, the second silicon-containing curable composition that covers the entire surface 53A of the first covering portion 53 and becomes the second covering portion 54 that does not contact the ceramic insulating substrate 42 and the support 43. Is applied. The second silicon-containing curable composition used as the second covering portion 54 is the same as the second silicon-containing curable composition used as the second covering portion 16 of the first embodiment described above. Therefore, detailed description is omitted.

  According to this embodiment, the GTO thyristor element 41 can be insulated by the first covering portion 53 having high heat resistance, high voltage resistance and high flexibility. In addition, the second covering portion 54 covers the surface of the first covering portion 53 but does not contact the ceramic insulating substrate 42 and the support 43, and therefore has a linear expansion coefficient with the ceramic insulating substrate 42. The second covering portion 54 having a considerable difference is not peeled off from the insulating substrate 42 at a high temperature (for example, 200 ° C. or more). Moreover, the 1st coating | coated part 53 works as a buffering material between the ceramic insulating substrates 42 and the 2nd coating | coated part 54, and can reduce the stress at the time of high temperature. Thereby, according to this embodiment, high heat resistance and high withstand voltage can be achieved, and adhesion between the covering portion 53 of the GTO thyristor element 41 and the ceramic insulating substrate 42 forming the support of the GTO thyristor element 41 is achieved. And can be used at high temperatures.

(Fifth embodiment)
Next, FIG. 4 shows a fifth embodiment of the semiconductor device of the present invention. The fifth embodiment is different from the above-described fourth embodiment only in the following points (1) and (2). Therefore, in the fifth embodiment, the same parts as those in the above-described fourth embodiment are denoted by the same reference numerals, and different parts from the above-described fourth embodiment will be mainly described.

(1) A frame 61 having mechanical strength such as ceramic, metal, or resin extending upward from the edge 42A of the ceramic insulating substrate 42 is provided.
(2) A point that a first covering portion 63 and a second covering portion 64 are provided instead of the first covering portion 53 and the second covering portion 54.

  In the fifth embodiment, the first covering portion 63 is formed on the entire surface of the SiC GTO thyristor element 41, the lead wires 46 and 48, the electrodes 47 and 50, and a part of the terminals 51 and 52 on the electrodes 47 and 50. The point of covering is the same as the first covering portion 53 described above. On the other hand, the first covering portion 63 of the fifth embodiment has a side surface 63B that extends substantially directly above the upper surface of the ceramic insulating substrate 42 and is in close contact with the inner wall 61A of the frame 61. This is different from the first covering portion 53 described above. The frame 61 extends upward from the edge portion 42 </ b> A of the ceramic insulating substrate 42.

  Further, in the fifth embodiment, the second covering portion 64 covers the entire upper surface 63C of the first covering portion 63 but does not cover the side surface 63B, and the ceramic insulating substrate 42 and the support body 43 are covered. Not touching. Further, the side surface 64 </ b> B of the second covering portion 64 is in close contact with the inner wall 61 </ b> A of the frame 61. Since the first and second silicon-containing curable compositions for producing the first and second covering portions 63 and 64 are the same as the first and second covering portions 53 and 54 described above, Detailed description is omitted.

  According to the fifth embodiment, since the thicknesses of the first and second covering portions 63 and 64 can be made uniform from the center portion to the end portion and the end portion is protected by the frame 61, the end portion is particularly preferable. The mechanical strength at can be improved.

  In the fourth and fifth embodiments, the first covering portions 53 and 63 are coated on the surface, and a third covering portion (not shown) that serves as an undercoat portion that directly covers the GTO thyristor element 41. And a fourth covering portion (not shown) serving as an undercoat portion that directly covers the first covering portions 53 and 63 while the surface of the second covering portions 54 and 64 is covered. You may prepare. Here, the silicon-containing curable composition for producing the third covering portion (not shown) and the fourth covering portion (not shown) is composed of the components (A), (B), (D ) Component and (F) component containing a silicon-containing curable composition. And the content weight% of the said (F) component of the components of the silicon containing curable composition which produces the said 3rd and 4th coating part produces the said 1st and 2nd coating parts 53 and 54. It is lower than the content by weight of the component (F) in the components of the silicon-containing curable composition. That is, the components of the silicon-containing curable composition for producing the third and fourth covering portions are the components of the silicon-containing curable composition for producing the first covering portion 53 except for the component (F). It is the same. As a result, the viscosity and adhesive strength of the third and fourth covering portions (not shown) serving as the undercoat portions are made higher than the viscosity and adhesive strength of the first and second covering portions 53 and 54. be able to. In addition, it is desirable that the content weight% of the component (F) in the third and fourth covering portions is 5% or less. Further, it is more preferable that the content% by weight of the component (F) in the third and fourth covering portions is substantially zero%.

  Further, the thickness of the first covering portions 53 and 63 is set to 0.1 mm or more and 80 mm or less, the thickness of the second covering portions 54 and 64 is set to 0.1 mm or more and 80 mm or less, and the third, It is preferable that the thickness of the fourth covering portion is 0.01 mm or more and 5 mm or less.

  In the first to fifth embodiments, the GTO thyristor made of SiC is provided as the semiconductor element. However, other semiconductor elements made of SiC such as a pn diode element may be provided, and GaN or other wide gaps may be provided. A semiconductor element made of a semiconductor may be provided, or a semiconductor element made of a semiconductor other than a wide gap semiconductor may be provided. In the first and second embodiments, one semiconductor element is placed on the support 3. However, two semiconductor elements or three or more semiconductor elements may be placed. In the first and second embodiments, the second covering portion 16 covers the entire surface 15A of the first covering portion 15. However, the outer edge portion of the surface 15A of the first covering portion 15 is the above-described first portion. The two covering portions 16 may be exposed. In the first and second embodiments, the support 3 is made of copper. However, the support 3 may be made of other metal such as aluminum, or a composite heat dissipation material such as Al-SiC.

  The present invention can be used for a wide gap semiconductor device having high withstand voltage and high heat resistance, and is useful as a high withstand voltage power semiconductor device having high heat resistance as an example.

1,21,41 GTO thyristor element 3 support 3A upper surface 3B part 7,8,46,48 lead wire 10,11,52 anode terminal 14,19 insulating material 15,53,63 first covering portion 16,54, 64 2nd coating | cover part 23,43 Support body 25,42 Ceramic insulating substrate 31 3rd coating | coated part 32 4th coating | coated part 47,50 Electrode 51 Gate terminal 61 Frame

Claims (7)

A semiconductor element;
A support on which the semiconductor element is mounted;
An electrical connection for electrically connecting the semiconductor element to an external device;
A first covering portion made of a silicon-containing curable composition that covers the upper surface of the semiconductor element and the support on which the semiconductor element is placed and covers at least a part of the electrical connection portion;
And a second covering portion made of a silicon-containing curable composition that covers the surface of the first covering portion and does not contact the support,
The silicon-containing curable composition for producing the first covering portion is:
A silicon-containing curable composition containing the following component (A), component (B) and component (D):
The silicon-containing curable composition for producing the second covering portion is:
A silicon-containing curable composition containing the following component (A), component (B), component (D) and component (F):
The said 2nd coating | coated part is the hardened | cured material which heat-cured the said silicon-containing curable composition, The linear expansion coefficient of the said hardened | cured material is 50-200 ppm / degreeC, It is characterized by the above-mentioned.
Component (A): A silicon-containing compound represented by the following general formula (1).

(In the above formula (1), R ^{1 to} R ⁷ may be the same or different and are substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. Or an aromatic hydrocarbon group having 6 to 12 carbon atoms (provided that R ⁵ and R ⁶ do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R ⁸ is carbon. An alkylene group having 2 to 4 atoms, Z is an alkenyl group or alkynyl group having 2 to 4 carbon atoms, a is a number from 2 to 7, b is a number from 1 to 7, and b is The polymer moiety having the repeating number and the polymer moiety having the repeating number ab may be block-like or random, e is a number from 0 to 3. c and d are d: c = 1: 1 to 1: 100, and the sum of all c and all d is 15 or more, and The number average molecular weight of the silicon-containing compound represented by the general formula (1) is a number between 3000 and 1,000,000, and the polymerization portion where c is the number of repetitions and the polymerization portion where d is the number of repetitions are: It may be block or random.)
Component (B): A silicon-containing compound represented by the following general formula (2).

(In the above formula (2), R ^{9 to} R ¹⁵ may be the same or different and are substituted with a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms or a saturated aliphatic hydrocarbon group. An aromatic hydrocarbon group having 6 to 12 carbon atoms (provided that R ¹³ and R ¹⁴ do not simultaneously become a saturated aliphatic hydrocarbon group having 1 to 12 carbon atoms), and R ¹⁶ is a carbon atom. An alkylene group having a number of 2 to 4, f is a number of 2 to 7, g is a number of 1 to 7, and a polymer part having g as a repeat number and a polymer part having f-g as a repeat number May be block or random, j is a number from 0 to 3. h and i are i: h = 1: 1 to 1: 100 and all h and all The number average molecular weight of the silicon-containing compound represented by the general formula (2) is a number that is a sum of i and 15 or more. (The number is set to 3000 to 1,000,000. Moreover, the polymerization portion having h as the number of repetitions and the polymerization portion having i as the number of repetitions may be block-shaped or random).
Component (D): a curing reaction catalyst that is a platinum-based catalyst
Component (F): Ceramic particles The semiconductor device according to claim 1,
The first covering portion contains the component (F),
Further, a third covering portion whose surface is coated on the first covering portion and directly covering the semiconductor element;
A surface of the second covering portion is coated and a fourth covering portion that directly covers the first covering portion;
The silicon-containing curable composition for producing the third covering portion and the fourth covering portion is:
A silicon-containing curable composition containing the above component (A), component (B), component (D) and component (F),
Of the components of the silicon-containing curable composition for producing the third and fourth coating parts, the content (%) of the component (F) is a component of the silicon-containing curable composition for producing the second coating part. A semiconductor device characterized by being lower than the content% by weight of the component (F). The semiconductor device according to claim 1 or 2,
A semiconductor device comprising a ceramic insulating substrate disposed between the semiconductor element and the support. The semiconductor device according to any one of claims 1 to 3,
The semiconductor device is characterized in that the support is made of a metal, a composite material of a metal and a semiconductor, or a stacked structure material of different metals. The semiconductor device according to claim 4,
A semiconductor device, wherein the surface of the support is plated. The semiconductor device according to any one of claims 1 to 5,
A semiconductor device, comprising: a frame disposed on the support and covering a side surface of the first and second covering portions. The semiconductor device according to any one of claims 1 to 6,
A semiconductor device, wherein the semiconductor element is a wide gear semiconductor element made of a wide gear semiconductor.

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