JP2011060757A - 冷陰極の表面処理方法 - Google Patents
冷陰極の表面処理方法 Download PDFInfo
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- JP2011060757A JP2011060757A JP2010193687A JP2010193687A JP2011060757A JP 2011060757 A JP2011060757 A JP 2011060757A JP 2010193687 A JP2010193687 A JP 2010193687A JP 2010193687 A JP2010193687 A JP 2010193687A JP 2011060757 A JP2011060757 A JP 2011060757A
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- 238000004381 surface treatment Methods 0.000 title claims abstract description 17
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- 239000002041 carbon nanotube Substances 0.000 description 38
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- 239000011230 binding agent Substances 0.000 description 15
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- 239000010410 layer Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 239000002070 nanowire Substances 0.000 description 6
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- 238000012986 modification Methods 0.000 description 4
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- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910026551 ZrC Inorganic materials 0.000 description 3
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical group CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
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- 230000007704 transition Effects 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
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- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003013 cathode binding agent Substances 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000013505 freshwater Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- 238000004377 microelectronic Methods 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 230000002165 photosensitisation Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/3043—Fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30434—Nanotubes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
【解決手段】本発明の冷陰極の表面処理方法は、複数の一次元のフィールド・エミッターを含む冷陰極を形成させる第一ステップと、液体の接着剤を前記冷陰極の表面に塗布する第二ステップと、前記冷陰極の表面に塗布された液体の接着剤を固化させる第三ステップと、前記固化された接着剤を、前記冷陰極の表面から除去して、前記複数の一次元のフィールド・エミッターを前記冷陰極の表面に直立させる第四ステップと、を含む。
【選択図】図1
Description
Claims (1)
- 複数の一次元のフィールド・エミッターを含む冷陰極を形成させる第一ステップと、
液体の接着剤を前記冷陰極の表面に塗布する第二ステップと、
前記冷陰極の表面に塗布された液体の接着剤を固化させる第三ステップと、
前記固化された接着剤を、前記冷陰極の表面から除去して、前記複数の一次元のフィールド・エミッターを前記冷陰極の表面に直立させる第四ステップと、
を含むことを特徴とする冷陰極の表面処理方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910190152.1 | 2009-09-04 | ||
CN2009101901521A CN102013371B (zh) | 2009-09-04 | 2009-09-04 | 一种冷阴极的表面处理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011060757A true JP2011060757A (ja) | 2011-03-24 |
JP5209683B2 JP5209683B2 (ja) | 2013-06-12 |
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JP2010193687A Active JP5209683B2 (ja) | 2009-09-04 | 2010-08-31 | 冷陰極の表面処理方法 |
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US (1) | US8431181B2 (ja) |
JP (1) | JP5209683B2 (ja) |
CN (1) | CN102013371B (ja) |
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CN108796586B (zh) * | 2018-06-25 | 2019-06-11 | 福州大学 | 一种基于光定向电泳沉积的镂空结构的3d打印方法 |
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JP2003007201A (ja) * | 2001-06-22 | 2003-01-10 | Samsung Sdi Co Ltd | カーボン系物質で形成されたエミッタを有する電界放出表示素子の製造方法 |
JP2005183370A (ja) * | 2003-12-16 | 2005-07-07 | Samsung Sdi Co Ltd | カーボンナノチューブエミッターの形成方法 |
JP2006140077A (ja) * | 2004-11-15 | 2006-06-01 | Mitsubishi Electric Corp | 冷陰極画像表示装置の製造方法 |
JP2006164965A (ja) * | 2004-11-10 | 2006-06-22 | Hitachi Powdered Metals Co Ltd | 電子放出源形成用組成物及び電子放出源用被膜の形成方法 |
JP2006228555A (ja) * | 2005-02-17 | 2006-08-31 | Mitsubishi Electric Corp | カーボンナノチューブペースト、それを用いた表示発光素子、および表示発光素子の製造方法 |
JP2007087643A (ja) * | 2005-09-20 | 2007-04-05 | Mitsubishi Electric Corp | 電子放出源の製造方法およびそれにより製造された電子放出源 |
JP2007265749A (ja) * | 2006-03-28 | 2007-10-11 | Hitachi Displays Ltd | 電子放出源形成用組成物、該組成物を用いて形成した電子源、及び該電子源を用いた電界放射型ディスプレイ |
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JP2011210591A (ja) * | 2010-03-30 | 2011-10-20 | Jfe Engineering Corp | 電子放出源、電子放出源用ペーストおよび電子放出源用ペーストの製造方法 |
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AU2003304297A1 (en) * | 2002-08-23 | 2005-01-21 | Sungho Jin | Article comprising gated field emission structures with centralized nanowires and method for making the same |
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-
2009
- 2009-09-04 CN CN2009101901521A patent/CN102013371B/zh active Active
- 2009-12-31 US US12/650,817 patent/US8431181B2/en active Active
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2010
- 2010-08-31 JP JP2010193687A patent/JP5209683B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003007201A (ja) * | 2001-06-22 | 2003-01-10 | Samsung Sdi Co Ltd | カーボン系物質で形成されたエミッタを有する電界放出表示素子の製造方法 |
JP2005183370A (ja) * | 2003-12-16 | 2005-07-07 | Samsung Sdi Co Ltd | カーボンナノチューブエミッターの形成方法 |
JP2006164965A (ja) * | 2004-11-10 | 2006-06-22 | Hitachi Powdered Metals Co Ltd | 電子放出源形成用組成物及び電子放出源用被膜の形成方法 |
JP2006140077A (ja) * | 2004-11-15 | 2006-06-01 | Mitsubishi Electric Corp | 冷陰極画像表示装置の製造方法 |
JP2006228555A (ja) * | 2005-02-17 | 2006-08-31 | Mitsubishi Electric Corp | カーボンナノチューブペースト、それを用いた表示発光素子、および表示発光素子の製造方法 |
JP2007087643A (ja) * | 2005-09-20 | 2007-04-05 | Mitsubishi Electric Corp | 電子放出源の製造方法およびそれにより製造された電子放出源 |
JP2007265749A (ja) * | 2006-03-28 | 2007-10-11 | Hitachi Displays Ltd | 電子放出源形成用組成物、該組成物を用いて形成した電子源、及び該電子源を用いた電界放射型ディスプレイ |
JP2007287473A (ja) * | 2006-04-17 | 2007-11-01 | Mitsubishi Electric Corp | 電界放出型電子源の製造方法 |
JP2011210591A (ja) * | 2010-03-30 | 2011-10-20 | Jfe Engineering Corp | 電子放出源、電子放出源用ペーストおよび電子放出源用ペーストの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102013371B (zh) | 2012-11-21 |
US20110059671A1 (en) | 2011-03-10 |
US8431181B2 (en) | 2013-04-30 |
JP5209683B2 (ja) | 2013-06-12 |
CN102013371A (zh) | 2011-04-13 |
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