JP2011054698A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicon carbide (SiC) semiconductor device with a back electrode that can obtain excellent ohmic characteristics with an SiC substrate and is superior in adhesion and durability. <P>SOLUTION: The SiC semiconductor substrate has the back electrode 11 including a nickel film 3 formed on a reverse surface of the SiC substrate 1, and a barrier film 2 interposed between the SiC substrate 1 and the nickel film 3 and having an opening part 2a. A reaction layer 4 of nickel silicide is formed between the SiC substrate 1 and the nickel film 3 at the opening part 2a of the barrier film 2. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a semiconductor device using a silicon carbide substrate and a method for manufacturing the same, and more particularly to a technique for forming an electrode (back electrode) provided on the back surface of a substrate.

  Conventionally, in a semiconductor device (SiC semiconductor device) using a silicon carbide (SiC) substrate, when an electrode (back surface electrode) is formed on the back surface of the substrate, a nickel film as an electrode material is directly formed on the back surface of the substrate. Thereafter, in order to obtain ohmic characteristics between the nickel film and the substrate, a high-temperature heat treatment is performed to form a reaction layer between the nickel film and the substrate.

  In addition to nickel silicide, the reaction layer includes intermediate products such as nickel carbide and carbon particles. When an intermediate product is contained in the reaction layer, the film quality of the reaction layer becomes rough and structurally brittle. As a result, there is a problem that the adhesion strength between the metal film for the electrode or wiring formed on the reaction layer and the reaction layer is lowered, and the metal film is peeled off. For this reason, methods for solving this problem have been proposed.

  For example, Patent Document 1 below shows that the intermediate product generated on the back electrode by the above heat treatment is removed by physical means such as oxygen ashing or argon sputtering before forming a metal film to be an electrode or wiring. Has been.

  In addition, for example, in Patent Document 2, after a nickel film is formed as the first metal on the back surface of the SiC substrate, it is covered with titanium, tantalum or tungsten as the second metal, and then a high temperature heat treatment is performed. Technology is disclosed. According to this technique, since the carbon component reacts with the second metal to form a carbide, the carbon component does not precipitate on the surface (the surface of the second metal). Thereby, peeling of the metal layer used as the electrode and wiring formed on the 2nd metal layer can be prevented.

Japanese Patent No. 3871607 JP 2006-344688 A

  In the SiC semiconductor device of Patent Document 1, the intermediate product cannot be completely removed, and the back electrode is oxidized during oxygen ashing, or a damaged layer is formed on the back electrode due to ion irradiation during argon sputtering. Therefore, the ohmic characteristics of the back electrode may be deteriorated.

  Further, in the SiC semiconductor device of Patent Document 2, even if the carbon component generated by the heat treatment reacts with the second metal to form a carbide layer, the intermediate product is generated on the entire surface of the back electrode. In some cases, it cannot be sufficiently suppressed. In particular, if the intermediate product remains on the entire surface, it is difficult to obtain sufficiently good characteristics in the adhesion strength (adhesion) and durability of the back electrode. In addition, since the carbide layer is interposed between the first metal and the second metal constituting the back electrode, there is a concern that the ohmic characteristics of the back electrode are deteriorated.

  The present invention has been made to solve the above problems, and in a silicon carbide (SiC) semiconductor device, a good ohmic characteristic with a SiC substrate can be obtained, and a back surface excellent in adhesion and durability. An object is to provide an electrode.

  A semiconductor device according to the present invention includes a SiC substrate, a first metal electrode formed on a back surface of the SiC substrate, and a barrier film interposed in a part between the SiC substrate and the electrode, The silicide of the first metal is formed in a portion other than the barrier film between the SiC substrate and the electrode.

  A method of manufacturing a semiconductor device according to the present invention includes a step of selectively forming a barrier film on a part of a back surface of an SiC substrate, a step of forming an electrode of a first metal on the barrier film, and the SiC substrate. The step of reacting the first substrate and the SiC substrate by heat treatment is provided.

  According to the present invention, a good ohmic characteristic can be obtained, and a back electrode of a SiC substrate having particularly excellent adhesion can be obtained.

6 is a manufacturing process diagram of the SiC semiconductor device according to the first embodiment. FIG. 3 is a diagram showing a pattern of a barrier film of the SiC semiconductor device according to the first embodiment. FIG. FIG. 10 is a manufacturing process diagram of the SiC semiconductor device according to the second embodiment. 6 is a cross-sectional view of an SiC semiconductor device according to a third embodiment. FIG. It is a block diagram of the sample used for the evaluation test of the SiC semiconductor device which concerns on this invention. It is a graph which shows the result of a die shear strength test. It is a graph which shows the result of a heat cycle intensity test.

<Embodiment 1>
FIG. 1 is a process diagram showing a method of manufacturing an SiC semiconductor device according to the first embodiment of the present invention. As described above, the present invention relates to the structure of the electrode (back surface electrode) provided on the back surface of the SiC substrate and the formation method thereof, and therefore, in this specification, the formation of the back surface electrode is particularly described, and the upper surface side of the SiC substrate is described. A description of the formed semiconductor device is omitted.

  A method for manufacturing the SiC semiconductor device according to the present embodiment will be described below. First, the SiC substrate 1 is prepared, and a predetermined semiconductor device structure (not shown) is formed on the upper surface side of the SiC substrate 1 by an ordinary method such as ion implantation. Semiconductor devices include, for example, Schottky barrier diodes and field effect transistors (MOSFETs), and their formation methods are disclosed in, for example, Japanese Patent Application Laid-Open Nos. 2008-130811 and 2008-210938.

  The back surface of the SiC substrate 1 is defined as a surface on the opposite side to the above-described upper surface, that is, a surface on which no ion implantation or the like for forming a semiconductor device structure is performed. In the present embodiment, SiC substrate 1 having the SiC (000-1) surface as the back surface is used. In the present embodiment, as a pretreatment for forming the back electrode, the back surface of SiC substrate 1 is cleaned by removing organic substances with an organic solvent and acid and removing the surface oxide layer by dipping in hydrofluoric acid.

  After the pretreatment, a barrier film 2 is formed on the entire back surface of the SiC substrate 1 as shown in FIG. In the present embodiment, a silicon nitride (SiN) film having a thickness of about 100 nm is used as the barrier film 2, and the formation is performed by a sputtering method in which a silicon (Si) target is discharged in a nitrogen atmosphere.

  A resist 6a patterned in a predetermined shape by a lithography method is formed on the barrier film 2, and a part of the barrier film 2 is selectively removed by reactive ion etching (RIE) using the resist 6a as a mask. An opening 2a is formed in the film 2 (FIG. 1B).

  The shape and pattern of the opening 2a formed in the barrier film 2 may be arbitrary, but FIG. 2 shows an example thereof. In each drawing of FIG. 2, the back surface of one chip of the SiC semiconductor device is shown. For example, FIG. 2A shows an example in which one circular opening 2a is provided for one chip. FIG. 2B shows an example in which a plurality of rectangular openings 2a are arranged in a matrix. FIG. 2C shows an example in which hexagonal openings 2a are arranged in a honeycomb structure. For example, if the size of the chip is about 3 mm square, one or more openings 2 a having a diameter of about 0.5 mm may be provided. More preferably, a large number of openings 2a having a diameter of about 100 μm are provided.

  It is preferable that the shape of each opening 2a does not include an acute angle portion as in these examples. When providing the several opening part 2a, the thing from which a magnitude | size and a form differ may be mixed. The area ratio of the opening 2a with respect to the entire back surface is desirably 50% or more from the viewpoint of ensuring ohmic characteristics, and desirably 90% or less from the viewpoint of improving adhesion.

  Here, the opening 2a is formed by reactive ion etching, but the method of forming the opening 2a is not limited thereto, and wet etching using hydrofluoric acid, for example, may be used. The method for forming the resist 6a is not limited to the lithography method, and for example, a screen printing method, a seal transfer method, or the like may be used. Alternatively, the opening 2a may be formed by etching using a metal mask.

  Subsequently, after the resist 6a is removed and the back surface of the SiC substrate 1 is cleaned again, a nickel (Ni) film 3 is formed on the entire back surface of the SiC substrate 1 as shown in FIG. In the present embodiment, the nickel film 3 (first metal) serving as the back electrode is formed with a film thickness of about 100 nm to 1 μm by sputtering in an Ar atmosphere. The nickel film 3 may be a nickel alloy.

  Next, in order to obtain ohmic characteristics, heat treatment is performed at a high temperature (600 to 1100 ° C.). Here, a high temperature heat treatment was performed at 1000 ° C. for 1 minute in a vacuum using a lamp annealing apparatus. At this time, since the nickel film 3 and the SiC substrate 1 are in contact with each other in the opening 2a (the part other than the barrier film 2), the reaction layer 4 is formed as shown in FIG. The reaction layer 4 is mainly nickel silicide formed by a reaction between nickel and silicon contained in the SiC substrate 1.

  These nickel film 3 and reaction layer 4 constitute a back electrode 11. The feature of the SiC semiconductor device is that the back electrode 11 includes a reaction layer 4 (nickel silicide) that can obtain ohmic characteristics with the SiC substrate 1. That is, good ohmic characteristics can be obtained when the reaction layer 4 is interposed between the nickel film 3 and the SiC substrate 1.

  In the process of forming the reaction layer 4 during the high-temperature heat treatment, an intermediate product 5 is generated inside the back electrode 11 (reaction layer 4 and nickel film 3). The intermediate product 5 is a substance whose main component is carbon, such as nickel carbide (nickel carbide (NiC)) or carbon particles (graphite (C)).

  In the present embodiment, the reaction layer 4 is selectively formed not on the entire surface of the back electrode 11 but on the opening 2a of the barrier film 2 and the vicinity thereof (the nickel film 3 is formed in the portion where the barrier film 2 exists). It remains intact without being eroded by alloying). Accordingly, the intermediate product 5 generated in the process of forming the reaction layer 4 is also generated only in the vicinity of the opening 2a.

  According to this configuration, since the reaction layer 4 (nickel silicide) is formed between the nickel film 3 and the SiC substrate 1 in the vicinity of the opening 2a, good ohmic characteristics of the back electrode 11 can be obtained. Moreover, since the intermediate product 5 is not produced | generated in the area | region other than that, the back surface electrode 11 becomes the thing excellent in adhesiveness and durability. That is, the back electrode 11 excellent in both ohmic characteristics, adhesion and durability can be obtained.

  In this embodiment, silicon nitride (SiN) is used as the barrier film 2, but the structure is stable even when heat treatment at a high temperature (about 1000 ° C.) for forming the reaction layer 4 is performed, and the nickel film Other materials may be used as long as they do not have an oxidizing action that degrades 3. Examples include nitrides such as boron nitride, aluminum nitride, titanium nitride, tantalum nitride, zirconium nitride, hafnium nitride, cerium nitride, aluminum carbide, titanium carbide, tantalum carbide, zirconium carbide, hafnium carbide, cerium carbide, etc. Carbide etc. are mentioned.

  In addition, if the thickness of the barrier film 2 is insufficient, it cannot withstand heating at about 1000 ° C., so it is preferable to secure a certain thickness. Conversely, if the barrier film 2 is too thick, there is a problem that the time required for each process becomes long. In the present embodiment, the thickness of the barrier film 2 is preferably about 10 nm to 200 nm.

<Embodiment 2>
In the second embodiment, another method of forming the back electrode 11 according to the present invention will be described. FIG. 3 is a process diagram showing a method of manufacturing the SiC semiconductor device according to the second embodiment of the present invention.

  First, similarly to the first embodiment, an SiC substrate 1 is prepared, a predetermined semiconductor device structure (not shown) is formed on the upper surface side of the SiC substrate 1 by a normal method, and the back surface of the SiC substrate 1 is preprocessed. The cleaning process is performed.

  Next, a resist 6b patterned in a predetermined shape is formed on the back surface of SiC substrate 1 by lithography. Although the resist 6b used in the first embodiment has a shape in which the formation region of the opening 2a is removed, the resist 6b used in the present embodiment has a shape in which the region other than the formation region of the opening 2a is removed. To do.

  Then, a barrier film 2 is formed on the entire back surface of the SiC substrate 1 (FIG. 3A). Also in this embodiment, a silicon nitride (SiN) film having a thickness of about 100 nm is used as the barrier film 2, and the formation is performed by a sputtering method in which a silicon (Si) target is discharged in a nitrogen atmosphere.

  Thereafter, by removing the resist 6b, the portion of the barrier film 2 on the resist 6b is removed by lift-off. As a result, an opening 2a is formed in the barrier film 2 (FIG. 3B). And the cleaning process of the back surface of SiC substrate 1 is performed again.

  The shape and pattern of the opening 2a formed in the barrier film 2 may be the same as in the first embodiment. The method for forming the resist 6a is not limited to the lithography method, and for example, a screen printing method or a seal transfer method may be used.

  Thereafter, similarly to the first embodiment, the nickel film 3 is formed on the entire back surface of the SiC substrate 1 (FIG. 3C), and the reaction layer 4 is formed by performing high-temperature heat treatment, whereby the back electrode 11 is formed. It forms (FIG.3 (d)).

  The back electrode 11 formed by the above steps has a structure similar to that of the first embodiment. That is, the back electrode 11 excellent in both ohmic characteristics, adhesion and durability can be obtained.

  Also in the present embodiment, silicon nitride (SiN) is used as the barrier film 2, but the structure is stable even when heat treatment at a high temperature (for example, about 1000 ° C.) for forming the reaction layer 4 is performed, and the nickel film Other materials may be used as long as they do not have an oxidizing action that degrades 3.

<Embodiment 3>
FIG. 4 is a cross-sectional view showing the structure of the SiC semiconductor according to the third embodiment. The SiC semiconductor device according to the third embodiment further includes a metal layer 7 (first electrode) as an electrode for joining to the back surface electrode 11 of the SiC semiconductor device produced in the first or second embodiment. 2 metal) and a protective film 8 are provided.

  The metal layer 7 is formed on the back electrode 11, and a nickel (Ni) film is used here. If the metal layer 7 is too thick, the metal layer 7 is liable to be peeled off due to film stress. In addition, the metal layer 7 desirably has a thickness of 500 nm or more so as to flatten the surface without being affected by the step between the barrier film 2 and the opening 2a and the unevenness of the reaction layer 4 (nickel silicide) shape. Here, the thickness of the metal layer 7 was 700 nm. In addition to nickel, the metal layer 7 may be made of aluminum (Al), copper (Cu), or an alloy thereof.

  The protective film 8 is formed on the metal layer 7 and is provided for the purpose of preventing oxidation of the metal layer 7. Therefore, a noble metal such as gold (Au) or silver (Ag) can be used as the material. Here, gold having a thickness of 100 nm was used.

  The inventor performed an adhesion evaluation test of the back electrode 11 using the SiC semiconductor device having the structure shown in FIG. Hereinafter, this evaluation test will be described.

  FIG. 5 is a diagram showing a configuration of a sample used in the evaluation test. As shown in FIG. 5, the sample includes a fixing electrode in which a nickel (Ni) film 17 and a gold (Au) film 18 are sequentially formed on a copper piece having a size of 10 mm square and a thickness of 1 mm by a sputtering method. A 3 mm square SiC semiconductor device 23 is fixed on the fixing electrode via a metal adhesive 15 applied in an area of about 4 mm square to complete a sample. In addition, when fixing the SiC semiconductor device 23 to a fixed electrode, in order to harden the metal adhesive 15, the heat processing for 2 hours were performed at 200 degreeC.

  First, as a first evaluation test, a back electrode adhesion test was performed using a die shear strength tester. The die shear strength test is a test in which a load stress is applied to the SiC semiconductor element 23 so as to be peeled off from the lateral direction, and a load at which peeling occurs is measured.

  FIG. 6 is a measurement result of die shear strength of a sample stored at a high temperature at 300 ° C., and shows a measurement result when using a conventional SiC semiconductor device 23 and using a device according to the present invention. ing. Specifically, the results of measuring the die shear strength of a plurality of samples stored in the atmosphere at 300 ° C. for 200 hours to 1400 hours are shown normalized by the die shear strength of the samples not heated at 300 ° C.

  In the conventional SiC semiconductor device 23, the die shear strength greatly decreased when the high-temperature storage time exceeded 1000 hours. However, in the SiC semiconductor device 23 of the present invention, no significant decrease in strength was observed until 1400 hours.

  Moreover, the heat cycle test was done as a 2nd evaluation test. FIG. 7 shows the measurement results. The results of measuring the die shear strength by repeatedly applying a temperature load of −50 ° C. to 200 ° C. are shown normalized by the die shear strength before the heat cycle. Here again, a comparison was made between the case where the conventional SiC semiconductor device 23 was used and the case where the SiC semiconductor device 23 according to the present invention was used. In particular, the SiC semiconductor device 23 according to the present invention has a diameter of 0.5 mm. Comparison was also made between the case where one opening 2a was provided (FIG. 2A) and the case where a plurality of openings 2a having a diameter of 100 μm were arranged (FIG. 2B).

  As shown in FIG. 7, in the sample using the conventional SiC semiconductor device 23, the number of tests (heat cycle) was about 500 times, and the die shear strength was greatly reduced. On the other hand, in the sample using the SiC semiconductor device 23 of the present invention, when there is one opening 2a, the die shear strength is maintained up to about 1000 times of the test, and when there are a plurality of openings 2a, the lifetime is further increased. Extended.

  As described above, from the first and second evaluation tests, it was confirmed that in the SiC semiconductor device according to the present invention, the adhesion and durability of the back electrode 11 are dramatically improved as compared with the conventional example.

  1 SiC substrate, 2 barrier film, 2a opening, 3 nickel film, 4 reaction layer, 5 intermediate product, 6a resist, 6b resist, 7 metal layer, 8 protective film, 11 back electrode.

Claims (13)

A SiC substrate;
A first metal electrode formed on the back surface of the SiC substrate;
A barrier film interposed in a part between the SiC substrate and the electrode;
A semiconductor device, wherein a silicide of the first metal is formed in a portion other than the barrier film between the SiC substrate and the electrode. The semiconductor device according to claim 1, wherein the barrier film has a shape having at least one opening. The semiconductor device according to claim 1, wherein the first metal is nickel or an alloy thereof. The semiconductor device according to claim 1, further comprising a metal layer made of a second metal on the electrode. The semiconductor device according to claim 4, wherein the second metal is any one of nickel, aluminum, copper, and an alloy thereof. The barrier film is
The semiconductor device according to claim 1, wherein the semiconductor device is a nitride or a carbide. The nitride is any one of silicon nitride, boron nitride, aluminum nitride, titanium nitride, tantalum nitride, zirconium nitride, hafnium nitride and cerium nitride,
The semiconductor device according to claim 6, wherein the carbide is any one of aluminum carbide, titanium carbide, tantalum carbide, zirconium carbide, hafnium carbide, and cerium carbide. The semiconductor device according to claim 1, wherein a thickness of the barrier film is 10 nm or more and 200 nm or less. Selectively forming a barrier film on a part of the back surface of the SiC substrate;
Forming a first metal electrode on the back surface of the SiC substrate on which the barrier film is formed;
A method of manufacturing a semiconductor device, comprising: a step of reacting the first metal and the SiC substrate by heat-treating the SiC substrate. The first metal is nickel or an alloy thereof;
The method for manufacturing a semiconductor device according to claim 9, wherein a temperature of the heat treatment is 600 ° C. or higher and lower than 1100 ° C. The method for manufacturing a semiconductor device according to claim 9, wherein the barrier film is formed in a shape having one or more openings. The step of forming the barrier film includes
Forming a barrier film on the entire back surface of the SiC substrate;
The method for manufacturing a semiconductor device according to claim 9, further comprising a step of selectively removing a part of the barrier film by etching. The step of forming the barrier film includes
Selectively forming a resist on a part of the back surface of the SiC substrate;
Forming a barrier film on the entire back surface of the SiC substrate on which the resist mask is formed;
The method for manufacturing a semiconductor device according to claim 9, further comprising a step of removing the resist mask and the barrier film formed thereon.

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