JP2011049423A - Method of manufacturing thin film transistor array - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor array by a printing method using a block which achieves good electric connection between upper and lower conductive layers of an interlayer dielectric even if in an uneven through hole. <P>SOLUTION: The method is provided for manufacturing the thin film transistor array by the printing method using the block which achieves the good electric connection between the upper and lower conductive layers of the interlayer dielectric even if the through hole is uneven, by making the quantity of ink held at a position opposite to the through hole of a pixel electrode pattern formed on the block larger than that of the ink held at part other than the position opposite to the through hole of the pixel electrode pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a thin film transistor array, and more particularly to a method for manufacturing a thin film transistor array by a printing method using a plate.

  In recent years, displays using thin film transistors (hereinafter referred to as TFTs) as drive elements, such as liquid crystal monitors and plasma displays, are actively used.

  Along with this, research and development relating to a method for producing an organic TFT array by a coating method, a printing method, or the like has been actively conducted without relying on high-cost photolithography and vacuum processes. If members such as wirings, semiconductors, electrodes, insulating films, etc. can be made into ink and a fine organic TFT array can be manufactured by an inexpensive and high-speed printing process, it can be expected to greatly reduce the cost of the display and improve the throughput.

  As the ink material for printing, a solution in which a solid content is dissolved in a solvent, a dispersion of fine particles, a mixed solution thereof, or the like is used. It has been reported that semiconductors and electrode materials can be printed using techniques such as an ink jet method, a flexographic printing method, a microcontact printing method, and a reverse offset printing method because thin films of about 10 nm to 200 nm function.

  In particular, as shown in Non-Patent Document 1, for example, the micro contact printing method (hereinafter referred to as the μCP method) is attracting attention as a technique capable of printing electrodes and semiconductors with a resolution of 1 μm.

  As a semiconductor material suitable for printing, an organic semiconductor having solubility in a solvent is promising. However, it is necessary to form a protective film for protecting the organic semiconductor layer from oxygen and moisture and an interlayer insulating film for forming the pixel electrode on the organic semiconductor. The protective film and the interlayer insulating film are preferably formed with a thickness of 500 nm or more, and more preferably 1000 nm or more, in order to satisfy the gas barrier property and the insulating function.

  For example, as shown in Patent Document 1, in a display using a TFT as a driving element, the TFT element and the pixel electrode of the display are usually electrically connected by the through hole formed in the above-described interlayer insulating film. It is manufactured with the structure.

  Alternatively, as shown in Patent Document 2, through-holes and pixel electrodes are collectively formed by forming through holes in an interlayer insulating film and applying conductive ink by an ink jet method.

JP 2006-0865502 A JP 2006-259383 A

(Germany) National Institute of Advanced Industrial Science and Technology Press Release June 9, 2008 "Printing Organic Thin Film Transistor Array on Flexible Substrate" http: // www. aist. go. jp / aist_j / press_release / pr2008 / pr20080609 / pr20080609. html (searched August 3, 2009)

  However, in the method of Patent Document 1, it is necessary to form the pixel electrode over the step of the uneven through hole. However, in the printing method capable of high definition such as the μCP method, the plate is brought into contact. Therefore, it is difficult to obtain a good electrical connection between the upper and lower conductive layers of the interlayer insulating film by overcoming the step of the through hole, and a poor electrical connection is likely to occur.

  In the method of Patent Document 2, through holes and pixel electrodes can be formed in a lump, but the resolution depends on the size of the ink droplets, and it is difficult to achieve high definition.

  The present invention has been made in view of the above circumstances, and a printing method using a plate, in which good electrical connection can be obtained between the upper and lower conductive layers of the interlayer insulating film even in the case of uneven through-hole portions. It is an object of the present invention to provide a method of manufacturing a thin film transistor array according to the above.

  The object of the present invention can be achieved by the following constitution.

1. A substrate,
A thin film transistor formed on the substrate;
An interlayer insulating film formed on the thin film transistor and having a through hole formed at a position of a drain electrode of the thin film transistor;
In a method of manufacturing a thin film transistor array comprising a pixel electrode electrically connected to the drain electrode through the through hole,
A pixel electrode forming step of forming the pixel electrode by printing using a plate;
The pixel electrode forming step includes:
An ink application step of applying ink containing a material of the pixel electrode to the pixel electrode pattern formed on the plate;
A transfer step of transferring the ink applied to the plate onto the interlayer insulating film,
In the ink application step, an ink reservoir is formed at a position facing the through hole of the pixel electrode pattern formed on the plate,
A method of manufacturing a thin film transistor array, wherein the ink stored in the ink reservoir is allowed to enter the through hole in the transfer step to electrically connect the drain electrode and the pixel electrode.

  2. 2. The method of manufacturing a thin film transistor array according to 1 above, wherein a concave portion or a convex portion is formed at a position facing the through hole of the pixel electrode pattern.

3. The ink application process is a process of ejecting and applying ink to the pixel electrode pattern by an ink jet method.
The amount of ink ejected to a position facing the through hole of the pixel electrode pattern is larger than the amount of ink ejected to a portion other than the position facing the through hole of the pixel electrode pattern. 3. The method for producing a thin film transistor array according to 1 or 2 above.

  4). In the ink application process, after the ink is uniformly applied to the entire surface of the pixel electrode pattern formed on the plate, the ink is added to the position facing the through hole of the pixel electrode pattern by ink jet method. 3. The method for producing a thin film transistor array according to 1 or 2, wherein the thin film transistor array is applied.

5). The pixel electrode forming step includes:
5. The thin film transistor according to any one of 1 to 4, further comprising a pressing step of pressing the ink transferred onto the interlayer insulating film in the transferring step against the interlayer insulating film with a press or a roller. Array manufacturing method.

  According to the present invention, the amount of ink held at a position facing the through hole of the pixel electrode pattern formed on the plate is changed to the amount of ink held at a portion other than the position facing the through hole of the pixel electrode pattern. A method of manufacturing a thin film transistor array by a printing method using a plate, in which good electrical connection can be obtained between conductive layers above and below an interlayer insulating film, even if there are uneven through-hole portions. Can be provided.

It is sectional drawing of 1 pixel of an example of the display to which the manufacturing method of the TFT array of this invention is applied. It is process drawing which shows 1st Embodiment of the manufacturing method by the printing method of a display. FIG. 6 is a schematic diagram (1/2) for explaining the pixel electrode formation step (step S05) of FIG. 2; FIG. 4 is a schematic diagram (2/2) for explaining the pixel electrode formation step (step S05) of FIG. It is a schematic diagram which shows the example of the shape of the plate | version | printing of 2nd Embodiment of the manufacturing method by the printing method of a display. It is a schematic diagram which shows 3rd Embodiment of the manufacturing method by the printing method of a display.

  Hereinafter, the present invention will be described based on the illustrated embodiment, but the present invention is not limited to the embodiment. In the drawings, the same or equivalent parts are denoted by the same reference numerals, and redundant description is omitted.

  First, an example of a display to which the TFT array manufacturing method of the present invention is applied will be described with reference to FIG. 1. FIG. 1 shows one pixel of an example of a display to which the TFT array manufacturing method of the present invention is applied. FIG.

  In FIG. 1, one pixel of the display 1 includes a lower substrate 101, an upper substrate 201, a TFT array 10, a display material 221 and the like. The TFT array 10 includes a TFT 11, an interlayer insulating film 151, a through hole 161, a pixel electrode 171, and the like. The TFT 11 is formed on the lower substrate 101, and includes a gate electrode 111, a gate insulating film 121, a source electrode 131, a drain electrode 133, a semiconductor layer 141, and the like in order from the lower side of FIG.

  A transparent common electrode 211 common to all pixels of the display 1 is formed on the surface facing the lower substrate 101 of the upper substrate 201. A voltage for display is applied between the common electrode 211 and the source electrode 131, and a voltage is applied to the display material 221 between the common electrode 211 and the pixel electrode 171 by a display signal applied to the gate electrode 111. A display is performed by applying.

  As the display material 221, in addition to the liquid crystal material described above, for example, an electrodeposition element material called an electrochemical display element, an electrochromic element material, an electrophoretic display element material, and the like can be considered.

  The display 1 is configured by arranging the pixels of FIG. 1 in a two-dimensional matrix. At the end of the display 1, the lower substrate 101 and the upper substrate 201 are connected with a seal pattern (not shown), and the lower substrate 101 is connected. The display material 221 is sealed in a space (cell gap) formed by the upper substrate 201 and the seal pattern.

  Here, the material and forming method of each element constituting the display 1 will be briefly described.

  First, as a material for the lower substrate 101 and the upper substrate 201, thin plates and sheets such as glass, polyimide, polyethylene terephthalate (PET), polyethylene naphthalate, polycarbonate, and polyethersulfone can be used.

  The gate electrode 111, the source electrode 131, the drain electrode 133, and the pixel electrode 171 can be formed by vacuum deposition, sputtering, spin coating, bar coating, slit coating, roller coating, capillary coating, or the like. Techniques such as a film method, a relief printing method such as a flexographic printing method and a μCP method, an intaglio printing method such as a gravure printing method, a screen printing method, and an ink jet method can be used. When using a solid film formation method such as a spin coating method, it is necessary to form a pattern by a photolithography method or the like after the film formation.

  Examples of the material of each electrode described above include inorganic materials such as Au, Ag, Cu, Cr, Al, W, Ta, ITO (indium tin oxide), and PEDOT / PSS (Poly (3,4-EthyleneDiOxyThiophene) -Poly. -(StyreneSulfonate)), conductive polymer materials such as polyaniline and polypyrrole can be used. In the case of forming an electrode using a coating process such as various printing methods, a solution, a dispersion of fine particles, or the like is performed as necessary.

  Examples of the material of the gate insulating film 121 include inorganic films such as a silicon oxide film, a silicon nitride film, and aluminum oxide, a photocurable resin such as polyimide, polyamide, polyester, polyacrylate, photo radical polymerization system, and photo cation polymerization system, A copolymer containing an acrylonitrile component, polyvinylphenol, polyvinyl alcohol, a novolac resin, an epoxy resin, a fluororesin, an organic compound such as cyanoethyl pullulan, or the like can be used.

  In addition, inorganic oxides such as silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide, and inorganic nitride fine particles such as silicon nitride and aluminum nitride may be dispersed in these organic compounds. Moreover, you may have a multilayer structure which laminated | stacked them.

  As a method for forming the semiconductor layer 141, a method similar to the method for forming each electrode described above can be used. As a material for the semiconductor layer 141, generally known organic semiconductor materials such as pentacene and derivatives thereof, polythiophene, and oligothiophene can be used.

  As a method for forming the interlayer insulating film 151, a method similar to the method for forming each electrode described above can be used. Further, as the material of the interlayer insulating film 151, the same material as the material of the gate insulating film 121 described above can be used.

  As a method for forming the through hole 161, an opening may be formed in the interlayer insulating film 151 by photolithography, laser ablation, or the like, or ink is applied only to the through hole 161 when the interlayer insulating film 151 is formed by a printing method. By not doing so, the interlayer insulating film 151 and the through hole 161 may be formed simultaneously.

  In order to apply the TFT array manufacturing method of the present invention, the TFT 11 has a configuration in which a gate electrode 111 and a gate insulating film 121 are formed before the source electrode 131, the drain electrode 133 and the semiconductor layer 141. It is desirable to adopt a type TFT configuration. The TFT array manufacturing method of the present invention is effective even in a top-gate TFT configuration, but the gate insulating film 121 and the interlayer insulating film 151 are interposed between the pixel electrode 171 and the drain electrode 133. Electrical connection becomes more difficult.

  Note that the positional relationship between the source electrode 131 and the drain electrode 133 and the semiconductor layer 141 may be either the bottom contact type shown in FIG. 1 or the top contact type.

  Next, a first embodiment of the manufacturing method by the printing method of the display 1 in FIG. 1 will be described with reference to FIGS. 2, 3, and 4. FIG. 2 is a process diagram showing a first embodiment of a method for manufacturing the display 1 by a printing method, and FIGS. 3 and 4 illustrate a pixel electrode formation process (process S05) in the process of FIG. It is a schematic diagram for.

  Hereafter, each process shown in FIG. 2 is demonstrated in order.

TFT formation process (process S01)
This is a step of forming the TFT 11 shown in FIG. For example, the gate electrode 111 is formed on the lower substrate 101 by the μCP method, and the gate insulating film 121 is formed thereon. Next, the source electrode 131 and the drain electrode 133 are formed over the gate insulating film 121 at the same time, and the semiconductor layer 141 is formed so as to straddle the source electrode 131 and the drain electrode 133. The drain electrode 133 is formed by extending to the position of the through hole 161 formed in the next step.

Interlayer insulation film, through hole formation process (process S03)
This is a step of forming the interlayer insulating film 151 and the through hole 161 shown in FIG. For example, the interlayer insulating film 151 is formed on the source electrode 131, the drain electrode 133, and the semiconductor layer 141 by the μCP method. At this time, the pattern of the interlayer insulating film 151 is not formed at the position where the through hole 161 is formed. Thereby, the interlayer insulating film 151 and the through hole 161 can be formed simultaneously. The interlayer insulating film 151 may be solid, and then the through hole 161 may be formed by photolithography.

Pixel electrode forming step (step S05)
This is a step of forming the pixel electrode 171 shown in FIG. 1 and bringing the drain electrode 133 and the pixel electrode 171 into contact with each other through the through hole 161 formed in the previous step. This process includes an ink application process (process S51), a transfer process (process S53), a pressing process (process S55), a baking process (process S57), and the like. This process will be described with reference to FIGS.

Ink application process (process S51)
In FIG. 3B, the interlayer insulating film 151 formed in step S03 is laminated on the drain electrode 133 of the TFT 11 formed in step S01, and one of the interlayer insulating films 151 on the drain electrode 133 is stacked. Similarly, the through hole 161 formed in step S03 is opened in the part.

  In FIG. 3A, a pixel electrode pattern 303 for forming the pixel electrode 171 is formed on the surface of the plate 301 used for the μCP method that faces the interlayer insulating film 151. A convex portion 305 is formed at a position facing the hole 161. In the example of FIG. 3A, the number of the convex portions 305 is three, but the present invention is not limited to this.

  When the ink 371 containing the material of the pixel electrode 171 described above is applied to the electrode pattern 303 on which the convex portion 305 is formed, a large amount of ink 371 adheres to the convex portion 305 and its periphery, and an ink reservoir 373 is formed. The method for applying the ink 371 to the electrode pattern 303 is not particularly limited. Further, the ink 371 in the ink reservoir 373 may be in an undried state or in a dry state.

Transfer process (process S53)
The plate 301 on which the ink reservoir 373 is formed is pressed against the interlayer insulating film 151 shown in FIG. 3B in the direction of arrow A in the figure, whereby the ink 371 is transferred onto the interlayer insulating film 151, The shape of the pixel electrode 171 is formed as indicated by a broken line in 3 (b). At this time, the ink 371 accumulated in the ink reservoir 373 enters the through hole 161 and connects the pixel electrode 171 and the drain electrode 133.

Pressing step (step S55)
In FIG. 4, the pixel electrode 171 is moved on the pixel electrode 171 transferred onto the interlayer insulating film 151 in the transfer step (step S <b> 53) while moving the roller 501 in the arrow B direction while rotating clockwise in the drawing. Is pressed against the interlayer insulating film 151 with the pressure P. As a result, the adhesion between the pixel electrode 171 and the interlayer insulating film 151, particularly the adhesion between the pixel electrode 171 and the drain electrode 133 in the through hole 161 can be improved.

  Instead of the roller 501, the pixel electrode 171 may be pressed by pressing using a flat plate equivalent to the plate 301, for example. Note that this step is a step for improving the adhesion between the pixel electrode 171 and the drain electrode 133 in the through-hole 161 portion and further improving the electrical connectivity. It can be omitted as appropriate.

Firing step (step S57)
By baking after the pressing step (step S55), the transferred ink 371 becomes conductive, the pixel electrode 171 is completed, and the pixel electrode 171 and the drain electrode 133 are electrically connected.

  As described above, according to the first embodiment, the convex portion is formed at a position facing the through hole of the pixel electrode pattern formed on the plate, and the ink held at the position facing the through hole is formed. By making the amount larger than the amount of ink held in a portion other than the position opposite to the through hole of the pixel electrode pattern, even in the uneven through hole portion, between the conductive layers above and below the interlayer insulating film It is possible to provide a method of manufacturing a thin film transistor array by a printing method using a plate, which can provide good electrical connection.

  Furthermore, by pressing the pixel electrode transferred by a roller or a press to improve the adhesion between the pixel electrode and the drain electrode at the through hole portion, even in the uneven through hole portion, the interlayer insulation It is possible to provide a method of manufacturing a thin film transistor array by a printing method using a plate, in which good electrical connection can be obtained between conductive layers above and below the film.

  Next, a second embodiment of the manufacturing method by the printing method of the display 1 will be described with reference to FIG. FIG. 5 is a schematic diagram showing an example of the shape of the plate of the second embodiment of the manufacturing method by the printing method of the display 1. The second embodiment is different from the first embodiment in the shape for collecting ink 371 provided at a position facing the through hole 161 of the plate 301, and the others are in the first embodiment. Is the same.

  In the example of FIG. 5A, a concave portion 315 is provided at a position facing the through hole 161 of the pixel electrode pattern 303, and a large amount of ink 371 adheres to the concave portion 315 to form an ink reservoir 373. The

  In the example of FIG. 5B, a plurality of (two in the illustrated example) recesses 315 are formed at positions facing the through holes 161 of the pixel electrode pattern 303. As a result, a large amount of ink 371 adheres to the recess 315 and an ink reservoir 373 is formed.

  In the example of FIG. 5C, a repeated pattern of the concave portion 315 and the convex portion 305 is formed at a position facing the through hole 161 of the pixel electrode pattern 303, and the ink 371 includes the concave portion 315 and the convex portion 305. An ink reservoir 373 is formed by adhering a large amount in the repeated pattern.

  As described above, according to the second embodiment, a concave or convex pattern is formed at a position facing the through hole of the pixel electrode pattern formed on the plate and held at a position facing the through hole. By increasing the amount of the ink formed above the amount of ink retained in a portion other than the position facing the through hole of the pixel electrode pattern, the upper and lower sides of the interlayer insulating film can be formed even in the uneven through hole portion. It is possible to provide a method of manufacturing a thin film transistor array by a printing method using a plate, in which good electrical connection can be obtained between the conductive layers.

  Next, a third embodiment of the manufacturing method by the printing method of the display 1 will be described with reference to FIG. FIG. 6 is a schematic diagram showing a third embodiment of a manufacturing method of the display 1 by a printing method. The third embodiment is different from the first and second embodiments in that a shape for storing the ink 371 is not particularly provided at a position facing the through hole 161 of the plate 301, depending on the ink application method. The other is the same as in the first and second embodiments, except that the ink 371 is stored.

  In the example of FIG. 6A, first, conductive ink 371 that is a material of the pixel electrode 171 is uniformly applied to the pixel electrode pattern 303 of the plate 301. The method for applying the ink 371 to the electrode pattern 303 is not particularly limited. Subsequently, a conductive ink 371 that is a material of the pixel electrode 171 is ejected from the nozzle 401 using an ink jet method, and the position facing the through hole 161 of the pixel electrode pattern 303 as indicated by a broken line in the drawing. A large amount of ink 371 is adhered to the ink to form an ink reservoir 373.

  In the example of FIG. 6B, the conductive material, which is the material of the pixel electrode 171, is moved from the end of the pixel electrode pattern 303 of the plate 301 while moving the nozzle 401 in the direction of arrow C in the drawing using the inkjet method. Ink 371 is applied uniformly.

  When the nozzle 401 reaches a position facing the through hole 161 of the pixel electrode pattern 303, the amount of ink 371 discharged from the nozzle 401 is increased, and the ink 371 is positioned at a position facing the through hole 161 of the pixel electrode pattern 303. As a result, an ink reservoir 373 is formed. The ejection amount of the ink 371 is the same, and the moving speed of the nozzle 401 may be slowed. When the nozzle 401 passes a position facing the through hole 161 of the pixel electrode pattern 303, the ink 371 is uniformly applied to the end of the pixel electrode pattern 303.

  As described above, according to the third embodiment, the amount of ink held at a position facing the through hole of the pixel electrode pattern formed on the plate is determined by using the inkjet method. By increasing the amount of ink held in a portion other than the position facing the hole, good electrical connection can be obtained between the conductive layers above and below the interlayer insulating film even in the case of uneven through-hole portions. And a method of manufacturing a thin film transistor array by a printing method using a plate.

  As described above, according to the present invention, the amount of ink held at a position facing the through hole of the pixel electrode pattern formed on the plate is changed to a portion other than the position facing the through hole of the pixel electrode pattern. A printing method using a plate that makes it possible to obtain good electrical connection between the upper and lower conductive layers of the interlayer insulating film, even in the case of uneven through-hole portions by increasing the amount of ink held in the plate. A method of manufacturing a thin film transistor array can be provided.

  It should be noted that the detailed configuration and detailed operation of each configuration constituting the thin film transistor array manufacturing method according to the present invention can be changed as appropriate without departing from the spirit of the present invention.

  Hereinafter, detailed examples of the embodiments of the present invention will be described, but the present invention is not limited to these examples.

Example 1
A bottom gate and bottom contact type two-dimensional matrix TFT was fabricated on a polyethylene naphthalate substrate using the μCP method. Nano-silver ink was used for the material of each electrode, P3HT (Poly-3-hexylthiophene) ink was used for the material of the semiconductor layer, and polydimethylsiloxane (hereinafter referred to as PDMS) was used for the material of the plate. For the gate insulating film, polyimide was applied by a spin coater. The drain electrode was formed by extending to the position of the through hole.

  As the ink for the interlayer insulating film, an ink containing a polyimide precursor solution was used. A pattern including a through hole was formed on the above-described TFT by using the μCP method. It baked at 180 degreeC in oven and imidized. On the interlayer insulating film, a pixel electrode was formed by the μCP method using a PDMS plate on which the concavo-convex pattern shown in FIG. 5B was formed.

  A polymer-dispersed liquid crystal display was produced using the TFT array thus produced as a backplane and using a general liquid crystal panel production process by vacuum injection.

  When the drive test of the manufactured display was performed, it was found that normal operation was shown and good electrical connection was obtained in the through-hole portion.

(Example 2)
In contrast to Example 1, a planar plate having no uneven pattern was used as a PDMS plate for forming a pixel electrode, and a pixel electrode was formed by a method of forming an ink reservoir by the ink jet method shown in FIG. . Others are the same as the first embodiment.

  A polymer-dispersed liquid crystal display was produced using the TFT array thus produced as a backplane and using a general liquid crystal panel production process by vacuum injection.

  When the drive test of the manufactured display was performed, it was found that normal operation was shown and good electrical connection was obtained in the through-hole portion.

(Comparative example)
For Examples 1 and 2, a planar plate having no concavo-convex pattern was used as a PDMS plate for forming a pixel electrode, and a pixel electrode was formed without forming an ink reservoir. Others are the same as in the first and second embodiments.

  A polymer-dispersed liquid crystal display was produced using the TFT array thus produced as a backplane and using a general liquid crystal panel production process by vacuum injection.

  When a drive test of the manufactured display was performed, it was found that normal operation was not performed with about 10% of the pixels, and as a result of confirmation, it was found that a poor electrical connection occurred in the through-hole portion.

1 Display 10 Thin Film Transistor (TFT) Array 11 Thin Film Transistor (TFT)
101 Lower substrate 111 Gate electrode 121 Gate insulating film 131 Source electrode 133 Drain electrode 141 Semiconductor layer 151 Interlayer insulating film 161 Through hole 171 Pixel electrode 201 Upper substrate 211 Common electrode 221 Display material 301 Plate 303 Pixel electrode pattern 305 Convex part 315 Concave part 371 Ink 373 Ink reservoir 401 Nozzle 501 Roller

Claims (5)

A substrate,
A thin film transistor formed on the substrate;
An interlayer insulating film formed on the thin film transistor and having a through hole formed at a position of a drain electrode of the thin film transistor;
In a method of manufacturing a thin film transistor array comprising a pixel electrode electrically connected to the drain electrode through the through hole,
A pixel electrode forming step of forming the pixel electrode by printing using a plate;
The pixel electrode forming step includes:
An ink application step of applying ink containing a material of the pixel electrode to the pixel electrode pattern formed on the plate;
A transfer step of transferring the ink applied to the plate onto the interlayer insulating film,
In the ink application step, an ink reservoir is formed at a position facing the through hole of the pixel electrode pattern formed on the plate,
A method of manufacturing a thin film transistor array, wherein the ink stored in the ink reservoir is allowed to enter the through hole in the transfer step to electrically connect the drain electrode and the pixel electrode.   2. The method of manufacturing a thin film transistor array according to claim 1, wherein a concave portion or a convex portion is formed at a position facing the through hole of the pixel electrode pattern. The ink application process is a process of ejecting and applying ink to the pixel electrode pattern by an ink jet method.
The amount of ink ejected to a position of the pixel electrode pattern facing the through hole is larger than the amount of ink ejected to a portion other than the position of the pixel electrode pattern facing the through hole. A method of manufacturing a thin film transistor array according to claim 1 or 2.   In the ink application process, after the ink is uniformly applied to the entire surface of the pixel electrode pattern formed on the plate, the ink is added to the position facing the through hole of the pixel electrode pattern by ink jet method. The thin film transistor array manufacturing method according to claim 1, wherein the thin film transistor array is applied. The pixel electrode forming step includes:
5. The method according to claim 1, further comprising: a pressing step of pressing the ink transferred onto the interlayer insulating film in the transfer step against the interlayer insulating film with a press or a roller. A method of manufacturing a thin film transistor array.

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